Publications for Rickard Liljedahl
Co-author map based on ISI articles 2007-

Keywords

vapor temperature substrates sublimation silicon sic quality off-axis n luminescence lifetimes fluorescent fast epitaxy cubic crystal carrier carbide 6h-sic 3c-sic

Journal Articles

Saskia Schimmel, Michl Kaiser, Valdas Jokubavicius, Yiyu Ou, Philip Hens, Margareta K. Linnarsson, Jianwu Sun, Rickard Liljedahl, Haiyan Ou, Mikael Syväjärvi and Peter Wellmann
  The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy
  IOP Conference Series: Materials Science and Engineering, 2014, 56(1), 012002.

Haiyan Ou, Yiyu Ou, Aikaterini Argyraki, Saskia Schimmel, Michl Kaiser, Peter Wellmann, Margareta Linnarsson, Valdas Jokubavicius, Jianwu Sun, Rickard Liljedahl and Mikael Syväjärvi
  Advances in wide bandgap SiC for optoelectronics
  European Physical Journal B: Condensed Matter Physics, 2014, 87, 58.

Valdas Jokubavicius, Michl Kaiser, Philip Hens, Peter Wellmann, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
  Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates
  Materials Science Forum, 2013, 740-742, 19-22.

Jianwu Sun, Ivan Gueorguiev Ivanov, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
  Considerably long carrier lifetimes in high-quality 3C-SiC(111)
  Applied Physics Letters, 2012, 100(25), 252101.
   Fulltext  PDF  
 Web of Science® Times Cited: 8

Mikael Syväjärvi, J. Müller, Jianwu Sun, Vytautas Grivickas, Yiyu Ou, Valdas Jokubavicius, Philip Hens, M. Kaisr, Kanaparin Ariyawong, K. Gulbinas, Rickard Liljedahl, M. K. Linnarsson, S. Kamiyama, P. Wellmann, E. Spiecker and H. Ou
  Fluorescent SiC as a new material for white LEDs
  Physica scripta. T, 2012, T148, 014002.
 Web of Science® Times Cited: 13

Jianwu Sun, Valdas Jokubavicius, Rickard Liljedahl, Rositsa Yakimova, S. Juillaguet, J. Camassel, S. Kamiyama and Mikael Syväjärvi
  Room temperature luminescence properties of fluorescent SiC as white light emitting diode medium
  Thin Solid Films, 2012, 522, 33-35.
 Web of Science® Times Cited: 2

Valdas Jokubavicius, P. Hens, Richard Liljedahl, Jianwu Sun, M. Kaiser, P. Wellmann, S. Sano, Rositza Yakimova, S. Kamiyama and Mikael Syväjärvi
  Effects of source material on epitaxial growth of fluorescent SiC
  Thin Solid Films, 2012, 522, 7-10.
 Web of Science® Times Cited: 2

Philip Hens, Valdas Jokubavicius, Rickard Liljedahl, G Wagner, Rositsa Yakimova, P Wellmann and Mikael Syväjärvi
  Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds
  Materials letters (General ed.), 2012, 67(1), 300-302.
   Fulltext  PDF  
 Web of Science® Times Cited: 4

Valdas Jokubavicius, Richard Liljedahl, Yiyu Ou, Haiyan Ou, Satoshi Kamiyama, Rositza Yakimova and Mikael Syväjärvi
  Geometrical Control of 3C and 6H-SiC Nucleation on Low Off-Axis Substrates
  Materials Science Forum, 2011, 679-680, 103-106.
   Fulltext  PDF  
 Web of Science® Times Cited: 4

Remigijus Vasiliauskas, M. Marinova, Mikael Syväjärvi, Rickard Liljedahl, G. Zoulis, J. Lorenzzi, G. Ferro, S. Juillaguet, J. Camassel, E. K. Polychroniadis and Rositsa Yakimova
  Effect of initial substrate conditions on growth of cubic silicon carbide
  Journal of Crystal Growth, 2011, 324(1), 7-14.
   Fulltext  PDF  
 Web of Science® Times Cited: 19

Conference Articles

Ivan Gueorguiev Ivanov, Milan Yazdanfar, Björn Lundqvist, Jr-Tai Chen, Jawad ul-Hassan, Pontus Stenberg, Rickard Liljedahl, Nguyen Tien Son, Joel W. III Ager, Olle Kordina and Erik Janzén
  High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure (SiC)-Si-28-C-12, Natural and C-13 - Enriched 4H-SIC
  Silicon Carbide and Related Materials 2013, PTS 1 AND 2, 2014.


Saskia Schimmel, Michl Kaiser, Philip Hens, Valdas Jokubavicius, Rickard Liljedahl, Jianwu Sun, Rositsa Yakimova, Yi Yu Ou, Hai Yan Ou, Margareta K. Linnarsson, Peter Wellmann and Mikael Syväjärvi
  Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates
  Silicon Carbide and Related Materials 2012, 2013.


 Web of Science® Times Cited: 1

Valdas Jokubavicius, Ho-Hsuan Huang, Saskia Schimmel, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
  Towards bulk-like 3C-SiC growth using low off-axis substrates
  SILICON CARBIDE AND RELATED MATERIALS 2012, 2013.


Philip Hens, Julian Müller, Günter Wagner, Rickard Liljedahl, Erdman Spiecker and Mikael Syväjärvi
  Defect generation and annihilation in 3C-SiC-(001) homoepitaxial growth by sublimation
  Silicon Carbide and Related Materials 2012, 2013.


Jianwu Sun, Satoshi Kamiyama, Peter Wellmann, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
  Microsecond carrier lifetimes in bulk-like 3C-SiC grown by sublimation epitaxy
  Silicon Carbide and Related Materials 2012, 2013.


Valdas Jokubavicius, Ho Hsuan Huang, Saskia Schimmel, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
  Towards Bulk-Like 3C-SiC Growth Using Low Off-Axis Substrates
  9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia, 2013.


Kanaparin Ariyawong, Valdas Jokubavicius, Rickard Liljedahl and Mikael Syväjärvi
  Step Instability in Sublimation Epitaxy on Low Off-Axis 6H-SiC
  9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia, 2013.


Margareta Linnarsson, Michl Kaiser, Rickard Liljedahl, Valdas Jokubavicius, Yiyu Ou, Peter Wellmann, Haiyan Ou and Mikael Syväjärvi
  Lateral Boron Distribution in Polycrystalline SiC Source Materials
  9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia, 2013.


Valdas Jokubavicius, Michl Kaiser, Philip Hens, Peter Wellmann, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
  Morphological and optical stability in growth of fluorescent SiCon low off-axis substrates
  9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia, 2013.


Björn Lundqvist, Peter Raad, Milan Yazdanfar, Pontus Stenberg, Rickard Liljedahl, Pavel Komarov, Niklas Rorsman, J. Ager III, Olle Kordina, Ivan Gueorguiev Ivanov and Erik Janzén
  Thermal Conductivity of Isotopically Enriched Silicon Carbide
  Thermal Investigations of ICs and Systems (THERMINIC), 2013, 2013.


Valdas Jokubavicius, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
  Stability in growth of 6H-SiC and 3C-SiC for LEDs and solar cells
  2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2012.


Philip Hens, J. Müller, G. Wagner, Rickard Liljedahl, Rositsa Yakimova, E. Spiecker, P. Wellmann and Mikael Syväjärvi
  Freestanding 3C-SiC grown by sublimation epitaxy using 3C-SiC templates on silicon
  Materials Science Forum Vols 717 - 720, 2012.


Valdas Jokubavicius, Björn Lundqvist, Philip Hens, Rickard Liljedahl, Rositza Yakimova, Satoshi Kamiyama and Mikael Syväjärvi
  On stabilization of 3C-SiC using low off-axis 6H-SiC substrates
  ICSCRM2011, 2012.


 Web of Science® Times Cited: 2