Publications for Remigijus Vasiliauskas
Co-author map based on ISI articles 2007-

Keywords

twin thickness temperature supersaturation substrates sublimation silicon sic quality nucleation homoepitaxial graphene epitaxy epitaxial defects cubic carrier carbide 6h-sic 3c-sic

Journal Articles

Vanya Darakchieva, A. Boosalis, A. A. Zakharov, T. Hofmann, M. Schubert, T. E. Tiwald, Tihomir Iakimov, Remigijus Vasiliauskas and Rositsa Yakimova
  Large-area microfocal spectroscopic ellipsometry mapping of thickness and electronic properties of epitaxial graphene on Si- and C-face of 3C-SiC(111)
  Applied Physics Letters, 2013, 102(21), 213116.
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 Web of Science® Times Cited: 2

Gholamreza Yazdi, Remigijus Vasiliauskas, Tihomir Iakimov, Alexei Zakharov, Mikael Syväjärvi and Rositsa Yakimova
  Growth of large area monolayer graphene on 3C-SiC and a comparison with other SiC polytypes
  Carbon, 2013, 57, 477-484.
 Web of Science® Times Cited: 3

Remigijus Vasiliauskas, A. Mekys, P. Malinovskis, Mikael Syväjärvi, J. Storasta and Rositza Yakimova
  Influence of twin boundary orientation on magnetoresistivity effect in free standing 3C–SiC
  Materials letters (General ed.), 2012, 74, 203-205.
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 Web of Science® Times Cited: 2

Remigijus Vasiliauskas, A. Mekys, P. Malinovskis, Sandrine Juillaguer, Mikael Syväjärvi, J. Storasta and Risitza Yakimova
  Impact of extended defects on Hall and magnetoresistivity effects in cubic silicon carbide
  Journal of Physics D: Applied Physics, 2012, 45(22), 225102.
 Web of Science® Times Cited: 1

Remigijus Vasiliauskas, Sandrine Juillaguer, Mikael Syväjärvi and Risitza Yakimova
  Cubic SiC formation on the C-face of 6H-SiC (0001) substrates
  Journal of Crystal Growth, 2012, 348(1), 91-96.
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 Web of Science® Times Cited: 5

Remigijus Vasiliauskas, Maya Marinova, Philip Hens, Peter Wellmann, Mikael Syväjärvi and Rositsa Yakimova
  Nucleation Control of Cubic Silicon Carbide on 6H- Substrates
  Crystal Growth & Design, 2012, 12(1), 197-204.
 Web of Science® Times Cited: 6

Remigijus Vasiliauskas, M. Marinova, Mikael Syväjärvi, Rickard Liljedahl, G. Zoulis, J. Lorenzzi, G. Ferro, S. Juillaguet, J. Camassel, E. K. Polychroniadis and Rositsa Yakimova
  Effect of initial substrate conditions on growth of cubic silicon carbide
  Journal of Crystal Growth, 2011, 324(1), 7-14.
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 Web of Science® Times Cited: 16

Gholamreza Yazdi, Remigijus Vasiliauskas, Mikael Syväjärvi and Rositsa Yakimova
  Fabrication of free-standing AlN crystals by controlled microrod growth
  Journal of Crystal Growth, 2008, 300(5), 935-939 .
 Web of Science® Times Cited: 2

Conference Articles

Jens Eriksson, Donatella Puglisi, Remigijus Vasiliauskas, Anita Lloyd Spetz and Rositsa Yakimova
  Thickness uniformity and electron doping in epitaxial graphene on SiC
  SILICON CARBIDE AND RELATED MATERIALS 2012, 2013.


 Web of Science® Times Cited: 1

Remigijus Vasiliauskas, Paulius Malinovskis, Algirdas Mekys, Mikael Syväjärvi, Jurgis Storasta and Rositsa Yakimova
  Polytype Inclusions in Cubic Silicon Carbide
  Silicon Carbide and Related Materials 2012, 2013.


G. Zoulis, Jianwu Sun, Remigijus Vasiliauskas, J. Lorenzzi, H. Peyre, Mikael Syväjärvi, G. Ferro, S. Juillaguet, Rositza Yakimova and J. Camassel
  Seeding layer influence on the low temperature photoluminescence intensity of 3C-SiC grown on 6H-SiC by sublimation epitaxy
  HETEROSIC and WASMPE 2011, 2012.


P. Scajev, P. Onufnjevs, G. Manolis, M. Karaliunas, S. Nargelas, N. Jegenyes, J. Lorenzzi, G. Ferro, Milena Beshkova, Remigijus Vasiliauskas, Mikael Syvajärvi, Rositsa Yakimova, M. Kato and K. Jarasionas
  On applicability of time-resolved optical techniques for characterization of differently grown 3C-SiC crystals and heterostructures
  HETEROSIC and WASMPE 2011, 2012.


Rositsa Yakimova, Remigijus Vasiliauskas, Jens Eriksson and Mikael Syväjärvi
  Progress in 3C-SiC growth and novel applications
  Materials Science Forum Vol 711, 2012.


 Web of Science® Times Cited: 1  Fulltext PDF

Remigijus Vasiliauskas, M. Marinova, Mikael Syväjärvi, A. Mantzari, A. Andreadou, J. Lorenzzi, G. Ferro, E.K. Polychroniadis and Rositsa Yakimova
  Sublimation Growth and Structural Characterization of 3C-SiC on Hexagonal and Cubic SiC Seeds
  Materials Science Forum, Vols. 645-648, 2010.


 Web of Science® Times Cited: 10

Valdas Jokubavicius, Justinas Palisaitis, Remigijus Vasiliauskas, Rositsa Yakimova and Mikael Syväjärvi
  Macrodefects in cubic silicon carbide crystals
  Materials Science Forum, Vols. 645-648, 2010.


 Web of Science® Times Cited: 1  Fulltext PDF

Milena Beshkova, Mikael Syväjärvi, Remigijus Vasiliauskas, Jens Birch and Rositsa Yakimova
  Structural Properties of 3C-SiC Grown by Sublimation Epitaxy
  ECSCRM2009,2009, 2009.


 Web of Science® Times Cited: 6

Milena Beshkova, Mikael Syväjärvi, Remigijus Vasiliauskas, Jens Birch and Rositsa Yakimova
  Properties of 3C-SiC Grown by Sublimation Epitaxy
  ECSCRM2008,2008, 2009.


Remigijus Vasiliauskas, Mikael Syväjärvi, Milena Beshkova and Rositsa Yakimova
  Two-dimensional nucleation of cubic and 6H silicon carbide
  ECSCRM2008,2008, 2009.


 Web of Science® Times Cited: 6

Gholamreza Yazdi, Mikael Syväjärvi, Remigijus Vasiliauskas and Rositsa Yakimova
  Employing discontinuous and continuous growth modes for preparation of AlN nanostructures on SiC substrates
  ECSCRM 2006, Newcastle, UK: Materials Science Forum Vols. 556-557, 2007.


Ph.D. Theses

Remigijus Vasiliauskas
  Sublimation Growth and Performance of Cubic Silicon Carbide
  2012.


  Fulltext PDF