Publications for Rafal Ciechonski
Co-author map based on ISI articles 2007-

Keywords

thick temperature sublimation sic schottky resistance pvt p-type on-state hot-wall estimated epitaxy epitaxial electrical doping diodes devices defects boron 4h-sic

Journal Articles

Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Rafal Ciechonski and Erik Janzén
  Improved hot-wall MOCVD growth of highly uniform AlGaN/GaN/HEMT structures
  Journal of Crystal Growth, 2009, 311(10), 3007-3010.
   Fulltext  PDF  
 Web of Science® Times Cited: 14

Anelia Kakanakova-Georgieva, Rafal Ciechonski, Urban Forsberg, Anders Lundskog and Erik Janzén
  Hot-Wall MOCVD for Highly Efficient and Uniform Growth of AIN
  Crystal Growth & Design, 2009, 9(2), 880-884.
 Web of Science® Times Cited: 17

D.J. Ewing, L.M. Porter, Qamar Ul Wahab, Rafal Ciechonski, Mikael Syväjärvi and Rositsa Yakimova
  Inhomogeneous electrical characteristics in 4H-SiC Schottky diodes
  Semiconductor Science and Technology, 2007, 22(12), 1287-1291.
 Web of Science® Times Cited: 7

Rafal Ciechonski, Anders Lundskog, Urban Forsberg, Anelia Kakanakova-Georgieva, Henrik Pedersen and Erik Janzén
  High 2DEG mobility of HEMT structures grown on 100 mm SI 4H-SiC substrates by hot-wall MOCVD
  Journal of Applied Physics, 2007, , .

CF Pirri, S Porro, S Ferrero, E Celasco, S Guastella, L Scaltrito, Rositsa Yakimova, Mikael Syväjärvi, Rafal Ciechonski, S De Angelis and D Crippa
  Growth, morphological and structural characterization of silicon carbide epilayers for power electronic devices applications
  Crystal research and technology (1981), 2005, 40(10-Nov), 964-966.

Mikael Syväjärvi, Rafal R. Ciechonski, Gholamreza R. Yazdi and Rositsa Yakimova
  Fast epitaxy by PVT of SiC in hydrogen atmosphere
  Journal of Crystal Growth, 2005, 275(1-2), e1103-e1107 .
 Web of Science® Times Cited: 3

Rafal Ciechonski, Mikael Syväjärvi, Qamar Ul Wahab and Rositsa Yakimova
  Evaluation of MOS structures processed on 4H–SiC layers grown by PVT epitaxy
  Solid-State Electronics, 2005, 49(12), 1917-1920.

A Paskaleva, Rafal Ciechonski, Mikael Syväjärvi, E Atanassova and Rositsa Yakimova
  Electrical behavior of 4H-SiC metal-oxide-semiconductor structures with Al2O3 as gate dielectric
  Journal of Applied Physics, 2005, 97(12), 124507.
 Web of Science® Times Cited: 16

Samuele Porro, Rafal Ciechonski, Mikael Syväjärvi and Rositsa Yakimova
  Electrical Analysis and Interface States Evaluation of of Ni Schottky diodes on 4H-SiC thick epilayers
  physica status solidi (a), 2005, 202(13), 2508-2514.
 Web of Science® Times Cited: 4

Rafal Ciechonski, Mikael Syväjärvi, Jawad ul-Hassan and Rositsa Yakimova
  Structural instabilities in growth of SiC crystals
  Journal of Crystal Growth, 2005, 275(1-2), e461-e466.
 Web of Science® Times Cited: 4

Rafal Ciechonski, Mikael Syväjärvi, Anelia Kakanakova-Georgieva and Rositsa Yakimova
  Effect of boron on the resistivity of compensated 4H-SiC
  Journal of electronic materials, 2003, 32(5), 452-457.
 Web of Science® Times Cited: 1

Conference Articles

Anders Lundskog, Urban Forsberg, Anelia Kakanakova-Georgieva, Rafal Ciechonski, Ivan Gueorguiev Ivanov, Vanya Darakchieva, Erik Janzén, M. Fagerlind, J-Y. Shiu and N. Rorsman
  Highly Uniform Hot-Wall MOCVD Growth of High-Quality AlGaN/GaN HEMT-Structures on 100 mm Semi-Insulating 4H-SiC Substrates
  ICNS-7,2007, 2007.


A Paskaleva, Rafal Ciechonski, Mikael Syväjärvi, E Atanassova and Rositsa Yakimova
  Characterization of 4H-SiC MOS structures with Al2O3 as gate dielectric
  Materials Science Forum, Vols. 483-485, 2005.


 Web of Science® Times Cited: 1

Rafal Ciechonski, Mikael Syväjärvi, Samuele Porro and Rositsa Yakimova
  Evaluation of On-state Resistance and Boron-related Levels in n-type 4H-SiC
  Materials Science Forum, Vols. 483-485, 2005.


 Web of Science® Times Cited: 2

Rositsa Yakimova, Mikael Syväjärvi, Rafal Ciechonski and Qamar Ul Wahab
  Growth of device quality 4H-SiC by high velocity epitaxy
  Materials Science Forum, Vols. 457-460, 2004.


 Web of Science® Times Cited: 4

D Ziane, JM Bluet, G Guillot, P Godignon, J Monserrat, Rafal Ciechonski, Mikael Syväjärvi, Rositsa Yakimova, L Chen and P Mawby
  Characterizations of SiC/SiO2 interface quality toward high power MOSFETs realization
  Materials Science Forum, Vols. 457-460, 2004.


 Web of Science® Times Cited: 7

Mikael Syväjärvi, Rositsa Yakimova, Rafal Ciechonski, D Davydov, Alexander Lebedev and Erik Janzén
  Origin and behaviour of deep levels in sublimation growth of 4H-SiC layers
  Materials Science Forum, Vols. 433-436, 2003.


Mikael Syväjärvi, Rositsa Yakimova, Rafal Ciechonski, Anelia Kakanakova-Georgieva, Liutauras Storasta and Erik Janzén
  Deep levels in 4H-SiC layers grown by sublimation epitaxy
  Optical Materials, Vol. 23, 2003.


 Web of Science® Times Cited: 1

Mikael Syväjärvi, Rositsa Yakimova, Rafal Ciechonski and Erik Janzén
  Comparison of SiC sublimation epitaxial growth in graphite and TaC coated crucibles
  Diam. relat. Mater. Vol.12, 2003.


 Web of Science® Times Cited: 4

Rafal Ciechonski, Rositsa Yakimova, Mikael Syväjärvi and Erik Janzén
  Effect of Ambient on 4H-SiC Bulk Crystals grown by Sublimation
  Materials Science Forum, Vols. 433-436, 2003.


Ph.D. Theses

Rafal Ciechonski
  Growth and characterization of SiC and GaN
  2007.


  Fulltext PDF

Licentiate Theses

Rafal Ciechonski
  Device characteristics of sublimation grown 4H-SiC layers
  2005.