Publications for Qamar Ul Wahab
Co-author map based on ISI articles 2007-

Keywords

x trap transistor spectroscopy sic schottky regions power optical microwave gan ev emission electrical diodes diode defects breakdown amplifier 4h-sic

Journal Articles

R Ramzan, F Zafar, S Arshad and Qamar Ul Wahab
  Figure of merit for narrowband, wideband and multiband LNAs
  International journal of electronics (Print), 2012, 99(11), 1603-1610.
 Web of Science® Times Cited: 1

H. Ashraf, M. Imran Arshad, Sadia Muniza Faraz, Qamar Ul Wahab, P. R. Hageman and M. Asghar
  Study of electric field enhanced emission rates of an electron trap in n-type GaN grown by hydride vapor phase epitaxy
  Journal of Applied Physics, 2010, 108(10), .
   Fulltext  PDF  
 Web of Science® Times Cited: 1

Ahsan-Ullah Kashif, Christer Svensson, Khizar Hayat, Sher Azam, Nauman Akhter, Muhammad Imran and Qamar-ul Wahab
  A TCAD approach for non-linear evaluation of microwave power transistor and its experimental verification by LDMOS
  Journal of Computational Electronics, 2010, 9(2), 79-86.

Sadia Muniza Faraz, H Ashraf, M Imran Arshad, P R Hageman, M Asghar and Qamar Ul Wahab
  Interface state density of free-standing GaN Schottky diodes
  Semiconductor Science and Technology, 2010, 25(9), 095008.
 Web of Science® Times Cited: 3

Hadia Noor, P Klason, Sadia Muniza Faraz, Omer Nour, Qamar Ul Wahab, Magnus Willander and M Asghar
  Influence of background concentration induced field on the emission rate signatures of an electron trap in zinc oxide Schottky devices
  JOURNAL OF APPLIED PHYSICS, 2010, 107(10), .
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 Web of Science® Times Cited: 2

Sher Azam, Christer Svensson, Qamar Ul Wahab and R. Jonsson
  Comparison of Two GaN Transistor Technologies in Broadband Power Amplifiers
  MICROWAVE JOURNAL, 2010, 53(4), 184-192.
 Web of Science® Times Cited: 1

Nargis Bano, I Hussain, Omer Nour, Magnus Willander, Qamar Ul Wahab, Anne Henry, H S Kwack and D Le Si Dang
  Depth-resolved cathodoluminescence study of zinc oxide nanorods catalytically grown on p-type 4H-SiC
  Journal of Luminescence, 2010, 130(6), 963-968.
   Fulltext  PDF  
 Web of Science® Times Cited: 11

Sadia Muniza Faraz, Hadia Noor, M. Asghar, Magnus Willander and Qamar ul Wahab
  Modeling and simulations of Pd/n-ZnO Schottky diode and its comparison with measurements
  Advanced Materials Research, 2009, 79-82, 1317-1320.
 Web of Science® Times Cited: 1

Hadia Noor, P. Klason, Omer Nour, Qamar Ul Wahab, M. Asghar and Magnus Willander
  Time-delayed transformation of defects in zinc oxide layers grown along the zinc-face using a hydrothermal technique
  JOURNAL OF APPLIED PHYSICS, 2009, 105(12), 123510.
 Web of Science® Times Cited: 5

Ahsan-Ullah Kashif, T. Johansson, Christer Svensson, Sher Azam, T. Arnborg and Qamar Wahab
  Influence of interface state charges on RF performance of LDMOS transistor
  Solid-State Electronics, 2008, 52(7), 1099-1105.
 Web of Science® Times Cited: 2

Sher Azam, Christer Svensson and Qamar Wahab
  Pulse Input Class-C Power Amplifier Response of SiC MESFET using Physical Transistor Structure in TCAD
  Solid-State Electronics, 2008, 52(5), 740-744.

S.A. Wilson, R.P.-J. Jourdain, Q. Zhang, R.A. Dorey, C.R. Bowen, Magnus Willander, Qamar Ul Wahab, M. Willander, S.M. Al-hilli, O. Nur, E. Quandt, C. Johansson, E. Pagounis, M. Kohl, J. Matovic, B. Samel, der Wijngaart W. van, Edwin Jager, D. Carlsson, Z. Djinovic, M. Wegener, C. Moldovan, E. Abad, M. Wendlandt, C. Rusu and K. Persson
  New materials for micro-scale sensors and actuators. An engineering review
  Materials science & engineering. R, Reports, 2007, 56(1-6), .
   Fulltext  PDF  
 Web of Science® Times Cited: 155

D.J. Ewing, L.M. Porter, Qamar Ul Wahab, Rafal Ciechonski, Mikael Syväjärvi and Rositsa Yakimova
  Inhomogeneous electrical characteristics in 4H-SiC Schottky diodes
  Semiconductor Science and Technology, 2007, 22(12), 1287-1291.
 Web of Science® Times Cited: 7

M. Asghar, I. Hussain, N. Noor, F. Iqbal, Qamar Ul Wahab and A. Bhatti
  Properties of dominant electron trap center in n-type SiC epilayers by means of deep level transient spectroscopy
  Journal of Applied Physics, 2007, 101(7), .
 Web of Science® Times Cited: 4

D.J. Ewing, L.M. Porter, Qamar Ul Wahab, X. Ma, T.S. Sudharsan, S. Tumakha, M. Goa and L.J. Brillson
  Inhomogeneities in Ni4H-SiC Schottky barriers: Localized Fermi-level pinning by defect states
  Journal of Applied Physics, 2007, 101(11), .
 Web of Science® Times Cited: 20

P. Klason, Karin Magnusson, Omer Nour, Qingxiang Zhao, Qamar Ul Wahab and Magnus Willander
  Synthesis and structural and optical properties of ZnO micro- and nanostructures grown by the vapour-liquid-solid method
  Physica Scripta, 2006, T126, 53-56.
 Web of Science® Times Cited: 5

S. Tumakha, D.J. Ewing, L.M. Porter, Qamar Ul Wahab, X. Ma, T.S. Sudharshan and L.J. Brillson
  Defect-driven inhomogeneities in Ni4H-SiC Schottky barriers
  Applied Physics Letters, 2005, 87(24), 242106.
 Web of Science® Times Cited: 20

Rafal Ciechonski, Mikael Syväjärvi, Qamar Ul Wahab and Rositsa Yakimova
  Evaluation of MOS structures processed on 4H–SiC layers grown by PVT epitaxy
  Solid-State Electronics, 2005, 49(12), 1917-1920.

Tanja Paskova, Plamen Paskov, E. M. Goldys, Vanya Darakchieva, U Södervall, M Godlewski, M Zielinski, E Valcheva, C Carlström, Qamar Ul Wahab and Bo Monemar
  Characterization of mass-transport grown GaN by hydride vapour-phase epitaxy
  Journal of Crystal Growth, 2004, 273( 1-2), 118-128.
 Web of Science® Times Cited: 5

Rolf Jonsson, Qamar Ul Wahab, Staffan Rudner and Christer Svensson
  Computational load pull simulations of SiC microwave power transistors
  Solid-State Electronics, 2003, 47(11), 1921-1926.
 Web of Science® Times Cited: 12

Chariya Virojanadara, RA Glans, T Balasubramanian, Leif Johansson, EB Macak, Qamar Ul Wahab and LD Madsen
  Schottky barrier height studies of Au/4H-SiC(0001) using photoemission and synchrotron radiation
  Journal of Electronic Materials, 2002, 31(12), 1353-1356.
 Web of Science® Times Cited: 3

R. Ahuja, Da Silva A. Ferreira, C. Persson, J.M. Osorio-Guillen, I. Pepe, Kenneth Järrendahl, O.P.A. Lindquist, N.V. Edwards, Qamar Ul Wahab and B. Johansson
  Optical properties of 4H-SiC
  Journal of Applied Physics, 2002, 91(3), 2099-2103.
 Web of Science® Times Cited: 16

Tanja Paskova, Plamen Paskov, EM Goldys, Vanya Darakchieva, U Sodervall, M Godlewski, M Zielinski, E Valcheva, CF Carlstrom and Qamar Ul Wahab
  Mass transport growth and properties of hydride vapour phase epitaxy GaN
  Physica status solidi. A, Applied research, 2001, 188(1), 447-451.
 Web of Science® Times Cited: 2

Tanja Paskova, E.M. Goldys, Plamen Paskov, Qamar Ul Wahab, Lars Wilzén, Michel P de Jong and Bo Monemar
  Mass transport growth and optical emission properties of hydride vapor phase epitaxy GaN
  Applied Physics Letters, 2001, 78(26), 4130-4132.
 Web of Science® Times Cited: 6

Qamar Ul Wahab, A Ellison, Anne Henry, Erik Janzén, Christer Hallin, J Di Persio and R Martinez
  Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H-SiC Schottky diodes
  Applied Physics Letters, 2000, 76(19), 2725-2727.
 Web of Science® Times Cited: 94

KC Chang, NT Nuhfer, Lisa Porter and Qamar Ul Wahab
  High-carbon concentrations at the silicon dioxide-silicon carbide interface identified by electron energy loss spectroscopy
  Applied Physics Letters, 2000, 77(14), 2186-2188.
 Web of Science® Times Cited: 123

Mikael Syväjärvi, Rositsa Yakimova, M Tuominen, Anelia Kakanakova-Georgieva, M F Macmillan, Anne Henry, Qamar Ul Wahab and Erik Janzén
  Growth of 6H and 4H-SiC by sublimation epitaxy
  Journal of Crystal Growth, 1999, 197(1-2), 155-162.

Chapters in Books

Qamar Ul Wahab
  High Temperature electronic materials
  Springer Handbook of Electronic and Photonic materials, Springer, 2007, 537-563.


Conference Articles

M. Asghar, F. Iqbal, Sadia Municha Faraz, Valdas Jokubavicius, Qamar Wahab and Mikael Syväjärvi
  Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation method
  -, 2012.


M. Asghar, F. Iqbal, Sadia Faraz, Valdas Jokubavicius, Qamar Wahab and Mikael Syväjärvi
  Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopy
  26th International Conference on Defects in Semiconductors, 2012.


Sadia Muniza Faraz, Muhammed Naveed Alvi, Anne Henry, Omer Nur, Magnus Willander and Qamar Ul Wahab
  Annealing Effects on Electrical and Optical Properties of N-ZnO/P-Si Heterojunction Diodes
  <em>Advanced Materials Research Vol. 324 (2011) pp 233-236</em>, 2011.


Sher Azam, Rolf Jonsson, Jonas Fritzin, Atila Alvandpour and Qamar Wahab
  High Power, Single Stage SiGaN HEMT Class E Power Amplifier at GHz Frequencies
  IEEE International Bhurban Conference on Applied Sciences and Technology, 2010.


H.R. Khan, Q. Wahab, Jonas Fritzin, Atila Alvandpour and Qamar Wahab
  A 900 MHz 26.8 dBm differential Class-E CMOS power amplifier in German Microwave Conference Digest of Papers, GeMIC 2010, vol , issue , pp 276-279
  German Microwave Conference Digest of Papers, GeMIC 2010, 2010.


Ahsan-Ullah Kashif, Christer Svensson and Qamar Ul Wahab
  Reduction in on-resistance of LDMOS transistor for improved RF performance
  Microelectronics Technology and Devices - SBMicro 2009, Vol. 23, issue 1, 2009.


Sher Azam, R. Jonsson, Erik Janzén and Qamar Ul Wahab
  Performance of SiC Microwave Transistors in Power Amplifiers
  Proc. of MRS Symposium on wide bandgap semiconductor electronics 8, 2008.


Ahsan-Ullah Kashif, R. Jonsson and Qamar Ul Wahab
  Further enhancement of Load pull simulation technique to study non linear effects of LDMOS in TCAD
  Giga Hertz Symposium,2008, 2008.


Ahsan-Ullah Kashif, Sher Azam, Christer Svensson and Qamar Ul Wahab
  Flexible power amplifier designing form device to circuit level by computational load-pull simulation technique
  Microelectonics Technology and Devices - SBMicro 2008, Vol. 14, issue 1: J. Swart, S. Selberherr, A. Susin, J. Diniz, N. Morimoto, 2008.


Sher Azam, Rolf Jonsson and Qamar Wahab
  Designing, Fabrication and Characterization of Power Amplifiers Based on 10-Watt SiC MESFET &amp; GaN HEMT at Microwave Frequencies
  IEEE European Microwave Week, October 10-15, Amsterdam, The Netherlands, 2008.


Ahsan-Ullah Kashif, T. Arnborg, Thomas Johansson, Christer Svensson and Qamar Ul Wahab
  A new large signal simulation technique to study non-linear effects of microwave power transistor
  International Semiconductor Device Research Symposium 2007 ISDRS-07,2007, 2007.


Sher Azam, R. Jonsson and Qamar Ul Wahab
  The limiting frontiers of maximum DC voltage at drain of SiC microwave power transistors in case of Class A power amplifiers
  International Semiconductor Device Research Symposium 2007 ISDRS-07,2007, 2007.


Ahsan-Ullah Kashif, T. Johansson, Christer Svensson, T. Arnborg and Qamar Ul Wahab
  Enhancement in RF performance of LDMOS transistor utilizing large signal TCAD physical simulation
  Conference on RF measurement technology RFMTC07,2007, 2007.


Ahsan-Ullah Kashif, Christer Svensson and Qamar Ul Wahab
  High power LDMOS transistor for RF-amplifiers.
  International Bhurban conference on applied sciences technology.,2007, 2007.


Sher Azam, Christer Svensson and Qamar Ul Wahab
  Designing of high efficiency power amplifier based on physical model of SiC MESFET in TCAD.
  International Bhurban conference on applied sciences technology.,2001, 2007.


D.J. Ewing, L.M. Porter, Qamar Ul Wahab, S. Tumakha and L.J. Brillson
  A Study of Inhomogeneous Schottky diodes on n-type 4H-SiC
  International Conference on Silicon Carbide and Related Materials 2005 ICSCRM 2005,2005, 2006.


S. Tumaka, L.M. Porter, D.J. Ewing, Qamar Ul Wahab, X.Y. Ma, T.S. Sudarshan and L.J. Brillson
  Nanoscale deep level defects correlation with Schottky barriers in 4H-SiC/Metal diodes
  International Conference on Silicon Carbide and Related Materials 2005 ICSCRM 2005,2005, 2006.


Sher Azam, Rolf Jonsson and Qamar Wahab
  Single-stage, High Efficiency, 26-Watt power Amplifier using SiC LE-MESFET
  Microwave Conference, 2006. APMC 2006. Asia-Pacific December 12-15, 2006.


P. Klason, O. Nur, Qing Xiang Zhao, K. Magnusson, Qamar Ul Wahab and Magnus Willander
  Growth and characterization of ZnO nanostructures
  SEMINANO-2005 Brag,2005, 2005.


L.J. Brillson, S.P. Tumakha, M. Gao, D.J. Ewing, L.M. Porter, R.S. Okojie, M. Zhang, P. Pirouz, Qamar Ul Wahab, X. Ma, T.S. Sudharshan, T. Onishi, S. Tsukimoto and M. Murakami
  The impact of surface defects on SiC Schottky and ohmic contact formation
  International Semiconductor Device Research Symposium,2005, 2005.


Erik Janzén, Peder Bergman, Örjan Danielsson, Urban Forsberg, Christer Hallin, Jawad ul-Hassan, Anne Henry, Ivan Gueorguiev Ivanov, Anelia Kakanakova-Gueorguie, Per Persson and Qamar Ul Wahab
  SiC and III-nitride Growth in a Hot-wall CVD Reactor
  Materials Science Forum, ISSN 0255-5476, volume 483-485, 2005.


 Web of Science® Times Cited: 5

Rolf Jonsson, Qamar Ul Wahab and Staffan Rudner
  DC and RF performance of insulating gate 4H-SiC depletion mode Field Effect Transistors
  Materials Science Forum, Vols. 457-460, 2004.


 Web of Science® Times Cited: 1

Rolf Jonsson, Qamar Wahab and Staffan Rudner
  DC and RF performance of insulating gate 4H-SiC depletion mode field effect transistors
  Materials Science Forum Vols. 457-460, 2004.


Rositsa Yakimova, Mikael Syväjärvi, Rafal Ciechonski and Qamar Ul Wahab
  Growth of device quality 4H-SiC by high velocity epitaxy
  Materials Science Forum, Vols. 457-460, 2004.


 Web of Science® Times Cited: 4

Christer Hallin, Qamar Ul Wahab, Ivan Gueorguiev Ivanov, Peder Bergman and Erik Janzén
  Homoepitaxial On-Axis Growth of 4H- and 6H-SiC by CVD
  Materials Science Forum, Vols. 457-460, 2004.


 Web of Science® Times Cited: 14

Rolf Jonsson, J Eriksson, Qamar Wahab, Staffan Rudner, N Rorsman, H Zirath and C Svensson
  Evaluation of SiC MESFET structures using large-signal time-domain simulations
  Materials Science Forum Vols. 389-393, 2002.


 Web of Science® Times Cited: 2

Qamar Ul Wahab, H Kosugi, H Yano, Christer Hallin, T Kimoto and H Matsunami
  4H-and 6H-SiC MOSFETs fabricated on sloped sidewalls formed by molten KOH etching
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 3

Qamar Ul Wahab, Robert Jonsson, Staffan Rudner and Christer Svensson
  RF power performance of SiC MESFET using a novel large signal simulation technique.
  Workshop on Physical simulation of semiconductor devices.,2002, 2002.


Qamar Ul Wahab, Robert Jonsson, Staffan Rudner and Christer Svensson
  RF output power analysis of 4H-SiC MESFETs using a novel large signal time domain simulation technique.
  Workshop on Physical simulation of Semiconductor Devices.,2002, 2002.


F.H.C. Carlsson, Qamar Ul Wahab, Peder Bergman and Erik Janzén
  Electroluminescence from 4H-SiC Schottky Diodes
  Mat. Res. Soc. Symp. Proc., Vol. 640, 2001.


J. Eriksson, N. Rorsman, H. Zirath, Rolf Jonsson, Qamar Wahab and Staffan Rudner
  A comparison between physical simulations and experimental results in 4H-SiC MESFETs with non-constant doping in the channel and buffer layers
  Maretials Science Forum Vols. 353-356, 2001.


Qamar Ul Wahab, EB Macak, J Zhang, LD Madsen and Erik Janzén
  Improvements in the electrical performance of high voltage 4H-SiC Schottky diodes by hydrogen annealing
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 11

Qamar Ul Wahab, Robert Jonsson, Staffan Rudner and Christer Svensson
  RF output power analysis of SiC MESFET using large signal time domain simulations.
  International Conference on Silicon Carbide and Related Materisl.,2001, 2001.


Qamar Ul Wahab, A. Ellson, J. Zhang, Urban Forsberg, E. Duranova, Anne Henry, L.D. Madsen and Erik Janzén
  Power Schottky rectifiers and microwave transistors in 4H-SiC
  <em>Proc. of the International Workshop on Semiconductor Devices</em>, 2000.


Rolf Johansson, Qamar Wahab and Staffan Rudner
  Physical simulations on the Operation of 4H-SiC Microwave Power Transistors
  Materials Science Forum Vols. 338-342, 2000.


 Web of Science® Times Cited: 2

Qamar Ul Wahab, A Ellison, Christer Hallin, Anne Henry, J Di Persio, R Martinez and Erik Janzén
  Influence of epitaxial growth and substrate induced defects on the breakdown of high-voltage 4H-SiC Schottky diodes
  Materials Science Forum(ISSN 0255-5476), Volume 338-3, 2000.


 Web of Science® Times Cited: 23

Qamar Ul Wahab, A Ellison, J Zhang, Urban Forsberg, E Duranova, Anne Henry, LD Madsen and Erik Janzén
  Designing, physical simulation and fabrication of high-voltage (3.85 kV) 4H-SiC Schottky rectifiers processed on hot-wall and chimney CVD films
  Materials Science Forum, Vols. 338-342, 2000.


 Web of Science® Times Cited: 6

S Zangooie, Per Persson, JN Hilfiker, Lars Hultman, Hans Arwin and Qamar Ul Wahab
  Microstructural, optical and electronic investigation of anodized 4H-SiC
  Materials Science Forum, Vols. 338-342, 2000.


 Web of Science® Times Cited: 4

A Ellison, J Zhang, W Magnusson, Anne Henry, Qamar Ul Wahab, Peder Bergman, Carl Hemmingsson, Tien Son Nguyen and Erik Janzén
  Fast SiC epitaxial growth in a chimney CVD reactor and HTCVD crystal growth developments
  Materials science Forum, Vols. 338-342, 2000.


 Web of Science® Times Cited: 29

Ph.D. Theses

Ahsan-Ullah Kashif
  Optimization of LDMOS Transistor in Power Amplifiers for Communication Systems
  2010.


  Fulltext PDF

Sher Azam
  Microwave Power Devices and Amplifiers for Radars and Communication Systems
  2009.


  Fulltext PDF

Licentiate Theses

Sadia Muniza Faraz
  Physical simulation, fabrication and characterization of Wide bandgap semiconductor devices
  2011.


  Fulltext PDF

Sher Azam
  Wide Bandgap Semiconductor (SiC &amp; GaN) Power Amplifiers in Different Classes
  2008.


  Fulltext PDF