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Publications for Pontus Stenberg

Co-author map based on Web of Sciences articles 2007-

Publications mentioned in social media 17 times*

Journal Articles

Pontus Stenberg, Ian Don Booker, Robin Karhu, Henrik Pedersen, Erik Janzén and Ivan Gueorguiev Ivanov
  Defects in silicon carbide grown by fluorinated chemical vapor deposition chemistry
  Physica. B, Condensed matter, 2018, 535, 44-49.

Pontus Stenberg, Erik Janzén and Henrik Pedersen
  Incorporation of dopants in epitaxial SiC layers grown with fluorinated CVD chemistry
  Journal of Vacuum Science & Technology B, 2017, 35(3), .
   Fulltext  PDF  

Pontus Stenberg, Örjan Danielsson, Edvin Erdtman, Pitsiri Sukkaew, Lars Ojamäe, Erik Janzén and Henrik Pedersen
  Matching precursor kinetics to afford a more robust CVD chemistry: a case study of the C chemistry for silicon carbide using SiF4 as Si precursor
  Journal of Materials Chemistry C, 2017, 5, 5818-5823.
   Fulltext  PDF  
 Web of Science® Times Cited: 1

Pontus Stenberg, Pitsiri Sukkaew, Ildiko Farkas, Olof Kordina, Erik Janzén, Lars Ojamäe, Örjan Danielsson and Henrik Pedersen
  Silicon Chemistry in Fluorinated Chemical Vapor Deposition of Silicon Carbide
  The Journal of Physical Chemistry C, 2017, 121(5), 2711-2720.
 Web of Science® Times Cited: 5

Ian Don Booker, Erik Janzén, Nguyen Tien Son, Jawad Hassan, Pontus Stenberg and Einar Sveinbjörnsson
  Donor and double donor transitions of the carbon vacancy related EH6/7 deep level in 4H-SiC
  Journal of Applied Physics, 2016, 119(23), .
 Web of Science® Times Cited: 3

Matthias Niethammer, Matthias Widmann, Sang-Yun Lee, Pontus Stenberg, Olle Kordina, Takeshi Ohshima, Son Tien Nguyen, Erik Janzén and Joerg Wrachtrup
  Vector Magnetometry Using Silicon Vacancies in 4H-SiC Under Ambient Conditions
   Fulltext  PDF  
 Web of Science® Times Cited: 8

Milan Yazdanfar, Pontus Stenberg, Ian Don Booker, Ivan Gueorguiev Ivanov, Olle Kordina, Henrik Pedersen and Erik Janzén
  Process stability and morphology optimization of very thick 4H-SiC epitaxial layers grown by chloride-based CVD
  Journal of Crystal Growth, 2013, 380, 55-60.
 Web of Science® Times Cited: 4

Conference Articles

Jawad Ul-Hassan, H. Bae, Louise Lilja, Ildiko Farkas, I. Kim, Pontus Stenberg, Jianwu Sun, Olle Kordina, Peder Bergman, S. Ha and Erik Janzén
  Fast growth rate epitaxy on 4((degrees)under-bar) off-cut 4-inch diameter 4H-SiC wafers

Ivan Gueorguiev Ivanov, Milan Yazdanfar, Björn Lundqvist, Jr-Tai Chen, Jawad ul-Hassan, Pontus Stenberg, Rickard Liljedahl, Nguyen Tien Son, Joel W. III Ager, Olle Kordina and Erik Janzén
  High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure (SiC)-Si-28-C-12, Natural and C-13 - Enriched 4H-SIC
  Silicon Carbide and Related Materials 2013, PTS 1 AND 2, 2014.

 Web of Science® Times Cited: 6  Fulltext PDF

Milan Yazdanfar, Pontus Stenberg, Ian Don Booker, Ivan Gueorguiev Ivanov, Henrik Pedersen, Olle Kordina and Erik Janzén
  Morphology optimization of very thick 4H-SiC epitaxial layers

Björn Lundqvist, Peter Raad, Milan Yazdanfar, Pontus Stenberg, Rickard Liljedahl, Pavel Komarov, Niklas Rorsman, J. Ager III, Olle Kordina, Ivan Gueorguiev Ivanov and Erik Janzén
  Thermal Conductivity of Isotopically Enriched Silicon Carbide
  Thermal Investigations of ICs and Systems (THERMINIC), 2013, 2013.

 Web of Science® Times Cited: 1

Ph.D. Theses

Pontus Stenberg
  Fluorinated SiC CVD

  Fulltext PDF

* Social media data based on publications from 2011 to present and with a DOI; data delivered by Altmetric.com.


Responsible for this page: Peter Berkesand
Last updated: 2017-02-21