Publications for Plamen Paskov
Co-author map based on ISI articles 2007-
Journal Articles
Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, David Lindgren, Lars Samuelson, Xianfeng Ni, Hadis Morkoc, Tanya Paskova, Zhaoxia Bi and Jonas Ohlsson
Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208(7), 1532-1534.
Fulltext  Web of Science® Times Cited: 1 |
Chih-Wei Hsu, Abhijit Ganguly, Chin-Pei Chen, Chun-Chiang Kuo, Plamen Paskov, Per-Olof Holtz, Li-Chyong Chen and Kuei-Hsien Chen
Optical properties of functionalized GaN nanowires
JOURNAL OF APPLIED PHYSICS, 2011, 109(5), 053523.
Fulltext Web of Science® Times Cited: 2 |
Bo Monemar, Plamen Paskov, Peder Bergman, Galia Pozina, A.A. Toropov, T.V. Shubina, T. Malinauskas and A. Usui
Transient photoluminescence of shallow donor bound excitons in GaN
Physical Review B. Condensed Matter and Materials Physics, 2010, 82, 235202.
Fulltext Web of Science® Times Cited: 11 |
Bernard Gil, Pierre Bigenwald, Plamen Paskov and Bo Monemar
Internal structure of acceptor-bound excitons in wide-band-gap wurtzite semiconductors
PHYSICAL REVIEW B, 2010, 81(8), 085211.
Fulltext Web of Science® Times Cited: 3 |
Tanja Paskova, E. A. Preble, A. D. Hanser, K. R. Evans, R. Kröger, Plamen Paskov, A. J. Cheng, M. Park, J. A. Grenko and M. A. L. Johnson
Polar and nonpolar HVPE GaN substrates: impact of doping on the structural, electrical and optical characteristics
Physica Status Solidi. C, Current topics in solid state physics, 2009, 6(2), 344-347.
Web of Science® Times Cited: 4 |
Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, T Kawashima, H Amano, I Akasaki, T Paskova, S Figge, D Hommel and A Usui
Evidence for Two Mg Related Acceptors in GaN
PHYSICAL REVIEW LETTERS, 2009, 102(23), 235501.
Web of Science® Times Cited: 21 |
Bo Monemar, Plamen Paskov, Peder Bergman, A.A. Toropov, T.V. Shubina and A. Usui
Recombination dynamics of free and bound excitons in bulk GaN
Superlattices and Microstructures, 2008, 43(5-6), 610-614.
|
Bo Monemar, Plamen Paskov, Peder Bergman, A.A. Toropov, T.V. Shubina, T. Malinauskas and A. Usui
Recombination of free and bound excitons in GaN
Physica status solidi. B, Basic research, 2008, 245(9), 1723-1740.
|
A.A. Toropov, Yu. E. Kitaev, Tatiana Shubina, Plamen Paskov, Peder Bergman and Bo Monemar
Polarization-resolved phonon-assisted optical transitions of bound excitons in wurtzite GaN
, 2008, , .
Web of Science® Times Cited: 4 |
Galia Pozina, Carl Hemmingsson, Plamen P. Paskov, Peder Bergman, Bo Monemar, T. Kawashima, H. Amano, I. Akasaki and A. Usui
Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates
Applied Physics Letters, 2008, 92(15), 151904.
Fulltext Web of Science® Times Cited: 5 |
Vanya Darakchieva, T. Paskova, M. Schubert, Plamen Paskov, Hans Arwin, Bo Monemar, D. Hommel, M. Heuken, J. Off, B.A. Haskell, P.T. Fini, J.S. Speck and S. Nakamura
Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers
Journal of Crystal Growth, 2007, 300(1), 233-238.
Web of Science® Times Cited: 4 |
Carl Hemmingsson, Plamen Paskov, Galia Pozina, M. Heuken, B. Schineller and Bo Monemar
Hydride vapour phase epitaxy growth and characterization of thick GaN using a vertical HVPE reactor
Journal of Crystal Growth, 2007, 300(1), 32-36.
Web of Science® Times Cited: 12 |
Bo Monemar, Plamen Paskov, Peder Bergman, S. Keller, S. P. DenBaars and U. K. Mishra
Effect of an (Al,In)N insertion layer on the radiative emission properties of (In,Ga)N/GaN multiple quantum well structures
Physica status solidi. A, Applied research, 2007, 204(1), 304-308.
Web of Science® Times Cited: 1 |
M. Esmaeili, M. Sabooni, H. Haratizadeh, Plamen Paskov, Bo Monemar, Per-Olof Holtz, S. Kamiyama and M. Iwaya
Optical properties of GaN/AlGaN QW nanostructures with different well and barrier widths
Journal of Physics, 2007, 19(35), .
Web of Science® Times Cited: 5 |
Hamid Harati Zadeh, Bo Monemar, Plamen Paskov, Per-Olof Holtz, E Valcheva, M Iwaya, S Kamiyama, H Amano and I Akasaki
Optical observation of discrete well width fluctuations in wide band gap III-nitride quantum wells
Physica status solidi. B, Basic research, 2007, 244(5), 1727-1734.
Web of Science® Times Cited: 3 |
Tanja Paskova, L. Becker, T. Böttcher, D. Hommel, Plamen Paskov and Bo Monemar
Effect of sapphire-substrate thickness on the curvature of thick GaN films grown by hydride vapor phase epitaxy
Journal of Applied Physics, 2007, 102(12), .
|
Galia Pozina, Plamen Paskov, Peder Bergman, Carl Hemmingsson, Lars Hultman, Bo Monemar, H. Amano and A. Usui
Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates
Applied Physics Letters, 2007, 91(22), .
Web of Science® Times Cited: 9 |
M. Sabooni, M. Esmaeili, Hamid Harati Zadeh, Bo Monemar, Plamen Paskov, Per-Olof Holtz, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
Exciton localization behaviour in different well width undoped GaN/Al 0.07Ga0.93N nanostructures
, 2007, , .
Web of Science® Times Cited: 4 |
M. Esmaeili, Hamid Harati Zadeh, Bo Monemar, Plamen Paskov, Per-Olof Holtz, Peder Bergman, M. Iwaya, S. Kamiyama, H. Amano and I Akasaki
Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: Influence of Al composition and Si doping
Nanotechnology, 2007, 18(2), .
Web of Science® Times Cited: 7 |
Bo Monemar, Plamen Paskov, Peder Bergman, A.A. Toropov and T.V. Shubina
Recent developments in the III-nitride materials
Physica status solidi. B, Basic research, 2007, 244(6), 1759-1768.
|
B. Gil, P. Bigenwald, M. Leroux, Plamen Paskov and Bo Monemar
Internal structure of the neutral donor-bound exciton complex in cubic zinc-blende and wurtzite semiconductors
Physical Review B. Condensed Matter and Materials Physics, 2007, 75(8), .
Web of Science® Times Cited: 9 |
Vanya Darakchieva, Tanja Paskova, M. Schubert, Hans Arwin, Plamen Paskov, Bo Monemar, D. Hommel, J. Off, F. Scholz, M. Heuken, B.A. Haskell, P.T. Fini, S.J. Speck and S. Nakamura
Anisotropic strain and phonon deformation potentials in GaN
Physical Review B. Condensed Matter and Materials Physics, 2007, 75(19), 195217.
Web of Science® Times Cited: 40 |
C. Roder, S. Einfeldt, S. Figge, T. Paskova, D. Hommel, Plamen Paskov, Bo Monemar, U. Behn, B.A. Haskell, P.T. Fini and S. Nakamura
Stress and wafer bending of a -plane GaN layers on r -plane sapphire substrates
Journal of Applied Physics, 2006, 100(10), .
Web of Science® Times Cited: 30 |
Bo Monemar, Plamen Paskov, Peder Bergman, Tanja Paskova, Carl Hemmingsson, T Malinauskas, K Jarasiunas, P Gibart and B Beaumont
Time-resolved spectroscopy of excitons bound at shallow neutral donors in HVPE GaN
Physica. B, Condensed matter, 2006, 376, 482-485.
Web of Science® Times Cited: 3 |
Plamen Paskov, R Schifano, Tanja Paskova, T Malinauskas, Peder Bergman, Bo Monemar, S Figge and D Hommel
Structural defect-related emissions in nonpolar a-plane GaN
Physica. B, Condensed matter, 2006, 376, 473-476.
Web of Science® Times Cited: 25 |
Bo Monemar, Plamen Paskov, Peder Bergman, M Iwaya, S Kamiyama, H Amano and I Akasaki
A hydrogen-related shallow donor in GaN?
Physica. B, Condensed matter, 2006, 376, 460-463.
Web of Science® Times Cited: 8 |
Bo Monemar, Plamen Paskov, Peder Bergman, Tanja Paskova, S Figge, J Dennemarck and D Hommel
The dominant shallow 0.225 eV acceptor in GaN
Physica status solidi. B, Basic research, 2006, 243(7), 1604-1608.
Web of Science® Times Cited: 14 |
Vanya Darakchieva, Tanja Paskova, Plamen Paskov, Hans Arwin, M Schubert, Bo Monemar, S Figge, D Hommel, BA Haskell, PT Fini and S Nakamura
Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a-plane GaN
Physica status solidi. B, Basic research, 2006, 243(7), 1594-1598.
Web of Science® Times Cited: 2 |
Carl Hemmingsson, Plamen Paskov, Galia Pozina, M. Heuken, B. Schineller and Bo Monemar
Growth of bulk GaN in a vertical hydride vapour phase epitaxy reactor
Superlattices and Microstructures, 2006, 40( 4-6 SPEC. ISS.), 205-213.
Web of Science® Times Cited: 13 |
Bo Monemar, Plamen Paskov, F. Tuomisto, K. Saarinen, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki and S. Kimura
Dominant shallow acceptor related to oxygen and hydrogen in GaN
Physical review. B, Condensed matter and materials physics, 2006, 376-377, 440-443.
Web of Science® Times Cited: 12 |
K.S. Zhuravlev, D.D. Ree, V.G. Mansurov, A.Yu. Nikitin, Plamen Paskov and Per-Olof Holtz
Microphotoluminescence of GaN/AlN quantum dots grown by MBE
Physica Status Solidi. C, Current topics in solid state physics, 2006, 3, 2048-2051.
|
T. Paskova, Vanya Darakchieva, Plamen Paskov, Bo Monemar, T. Suski, M. Bockowski, N. Ashkenov and M. Schubert
Bending in HVPE GaN free-standing films: effects of laser lift-off, polishing and high temperature annealing
Physica Status Solidi. C, Current topics in solid state physics, 2006, 3, 1475-1478.
|
Bo Monemar, Plamen Paskov, Peder Bergman, A.A. Toropov, T.V. Shubina, S. Figge, T. Paskova, D. Hommel, A. Usui, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
Optical signatures of dopants in GaN
Materials Science in Semiconductor Processing, 2006, 9( 1-3), 168-174.
Web of Science® Times Cited: 5 |
Plamen Paskov, Tanja Paskova, Bo Monemar, S. Figge, D. Hommel, B.A. Haskell, P.T. Fini, S.J. Speck and S. Nakamura
Optical properties of nonpolar a-plane GaN layers
Superlattices and Microstructures, 2006, 40( 4-6 SPEC. ISS.), 253-261.
Web of Science® Times Cited: 19 |
B. Arnaudov, Plamen Paskov, Hamid Harati Zadeh, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
Radiative recombination mechanism in highly modulation doped GaN/AlGaN multiple quantum wells
Physica Status Solidi. C, Current topics in solid state physics, 2006, 6, 1888-1891.
|
Plamen Paskov, R. Schifano, T. Malinauskas, T. Paskova, Peder Bergman, Bo Monemar, S. Figge, D. Hommel, B.A. Haskell, P.T. Fini, J.S. Speck and S. Nakamura
Photoluminescence of a -plane GaN: comparison between MOCVD and HVPE grown layers
Physica Status Solidi. C, Current topics in solid state physics, 2006, 6, 1499-1502.
|
T. Paskova, D. Hommel, Plamen Paskov, Vanya Darakchieva, Bo Monemar, M. Bockowski, T. Suski, I. Grzegory, T. Tuomisto, K. Saarinen, N. Ashkenov and M. Schubert
Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy
Applied Physics Letters, 2006, 88(14), 141909.
Web of Science® Times Cited: 17 |
Tanja Paskova, B. Arnaudov, Plamen Paskov, E.M. Goldys, S. Hautakangas, K. Saarinen, U. Sodervall and Bo Monemar
Donor-acceptor pair emission enhancement in mass-transport-grown GaN
Journal of Applied Physics, 2005, 98(3), 033508.
Web of Science® Times Cited: 10 |
Plamen Paskov, R. Schifano, Bo Monemar, T. Paskova, S. Figge and D. Hommel
Emission properties of a -plane GaN grown by metal-organic chemical-vapor deposition
Journal of Applied Physics, 2005, 98(9), 093519.
Web of Science® Times Cited: 114 |
TJ Ochalski, A Grzegorczyk, M Rudzinski, PK Larsen, Per-Olof Holtz, Peder Bergman and Plamen Paskov
Optical study of AlGaN/GaN based HEMT structures grown on sapphire and SiC
Physica status solidi. A, Applied research, 2005, 202(7), 1300-1307.
Web of Science® Times Cited: 2 |
Tanja Paskova, Vanya Darakchieva, Plamen Paskov, Jens Birch, E Valcheva, Per Persson, B Arnaudov, S Tungasmitta and Bo Monemar
Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers
Journal of Crystal Growth, 2005, 281(1), 55-61.
Web of Science® Times Cited: 42 |
Bo Monemar, Tanja Paskova, Carl Hemmingsson, Henrik Larsson, Plamen Paskov, Ivan Gueorguiev Ivanov and Aleksander Kasic
Growth of thick GaN layers by hydride vapor phase epitaxy
Journal of Ceramic Processing Research, 2005, 6(2), 153-162.
|
T.J. Ochalski, A. Grzegorczyk, M. Rudzinski, P.K. Larsen, E. Kowalczyk, Per-Olof Holtz, Peder Bergman and Plamen Paskov
Optical study of AlGaN/GaN based HEMT structures
Physica Status Solidi. C, Current topics in solid state physics, 2005, 2, 2791-2794.
|
Plamen Paskov, Peder Bergman, Vanya Darakchieva, Tanja Paskova, Bo Monemar, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
Photoluminescence of GaN/AlN superlattices grown by MOCVD
Physica Status Solidi. C, Current topics in solid state physics, 2005, 2, 2345-2348.
|
Plamen Paskov, Peder Bergman, Bo Monemar, S. Keller, S.P. DenBaars and U.K. Mishra
Spatially direct and indirect transitions in InGaN/GaN structures with coupled quantum wells
Physica Status Solidi. C, Current topics in solid state physics, 2005, 2, 2337-2340.
|
B. Arnaudov, Tanja Paskova, Plamen Paskov, Björn Magnusson, Bo Monemar, H. Lu and W.J. Schaff
On the nature of the near bandedge luminescence of InN epitaxial layers
AIP Conference Proceedings, 2005, 772, 285-286.
|
Tanja Paskova, B. Arnaudov, Plamen Paskov, E.M. Goldys, S. Hautakangas, K. Saarinen, U. Sodervall and Bo Monemar
Dominating behaviour of the donor-acceptor pair emission in mass-transport GaN
AIP Conference Proceedings, 2005, 772, 261-262.
|
Tanja Paskova, Vanya Darakchieva, Plamen Paskov, Jens Birch, E. Valcheva, Per Persson, B. Arnaudov, S. Tungasmita and Bo Monemar
Nonpolar a-plane HVPE GaN: growth and in-plane anisotropic properties
Physica Status Solidi. C, Current topics in solid state physics, 2005, 2, 2027-2031.
|
Bo Monemar, Plamen Paskov and A. Kasic
Optical properties of InN - The bandgap question
Superlattices and Microstructures, 2005, 38(1), 38-56.
Web of Science® Times Cited: 62 |
Vanya Darakchieva, E. Valcheva, Plamen Paskov, M. Schubert, Tanja Paskova, Bo Monemar, H. Amano and I. Akasaki
Phonon mode behavior in strained wurtzite AlN/GaN superlattices
Physical Review B. Condensed Matter and Materials Physics, 2005, 71(11), 115329.
Web of Science® Times Cited: 16 |
Vanya Darakchieva, Tanja Paskova, Plamen Paskov, Bo Monemar, N. Ashkenov and M. Schubert
Structural characteristics and lattice parameters of hydride vapor phase epitaxial GaN free-standing quasisubstrates
Journal of Applied Physics, 2005, 97(1), 013517.
Web of Science® Times Cited: 16 |
Tanja Paskova, Vanya Darakchieva, E Valcheva, Plamen Paskov, Ivan Gueorguiev Ivanov, Bo Monemar, T Bottcher, C Roder and D Hommel
Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications: Strain distribution and wafer bending
Journal of Electronic Materials, 2004, 33(5), 389-394.
Web of Science® Times Cited: 15 |
B Arnaudov, Tanja Paskova, Plamen Paskov, Björn Magnusson, E Valcheva, Bo Monemar, H Lu, WJ Schaff, H Amano and I Akasaki
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
Physical Review B. Condensed Matter and Materials Physics, 2004, 69(11), .
Web of Science® Times Cited: 126 |
Tanja Paskova, Plamen Paskov, E Valcheva, Vanya Darakchieva, Jens Birch, A Kasic, B Arnaudov, Sukkaneste Tungasmita and Bo Monemar
Polar and nonpolar GaN grown by HVPE: Preferable substrates for nitride-based emitting devices
Physica status solidi. A, Applied research, 2004, 201(10), 2265-2270.
Web of Science® Times Cited: 10 |
Bo Monemar, Plamen Paskov, H Haradizadeh, Peder Bergman, E Valcheva, Vanya Darakchieva, B Arnaudov, Tanja Paskova, Per-Olof Holtz, Galia Pozina, S Kamiyama, M Iwaya, H Amano and I Akasaki
Optical investigation of AlGaN/GaN quantum wells and superlattices
Physica status solidi. A, Applied research, 2004, 201(10), 2251-2258.
|
Plamen Paskov, Tanja Paskova, Per-Olof Holtz and Bo Monemar
Polarized photoluminescence of exciton-polaritons in free-standing GaN
Physica status solidi. A, Applied research, 2004, 201(4), 678-685.
Web of Science® Times Cited: 7 |
H. Haratizadeh, Bo Monemar, Plamen Paskov, Per-Olof Holtz, Galia Pozina, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
Time resolved photoluminescence study of Si modulation doped GaN/Al 0.07Ga0.93N multiple quantum wells
Physica status solidi. B, Basic research, 2004, 241(5), 1124-1133.
Web of Science® Times Cited: 9 |
Tanja Paskova, E. Valcheva, Plamen Paskov, Bo Monemar, A.M. Roskowski, R.F. Davis, B. Beaumont and P. Gibart
HVPE-GaN: Comparison of emission properties and microstructure of films grown on different laterally overgrown templates
Diamond and related materials, 2004, 13(4-8), 1125-1129.
Web of Science® Times Cited: 6 |
B. Arnaudov, Tanja Paskova, Plamen Paskov, Björn Magnusson, E. Valcheva, Bo Monemar, H. Lu, W.J. Schaff, H. Amano and I. Akasaki
Free-to-bound radiative recombination in highly conducting InN epitaxial layers
Superlattices and Microstructures, 2004, 36(4-6), 563-571.
Web of Science® Times Cited: 6 |
Vanya Darakchieva, Plamen Paskov, E. Valcheva, Tanja Paskova, M. Schubert, C. Bundesmann, H. Lu, W.J. Schaff and Bo Monemar
Infrared ellipsometry and Raman studies of hexagonal InN films: Correlation between strain and vibrational properties
Superlattices and Microstructures, 2004, 36(4-6), 573-580.
Web of Science® Times Cited: 11 |
Plamen Paskov, Tanja Paskova, Per-Olof Holtz and Bo Monemar
Polarized photoluminescence study of free and bound excitons in free-standing GaN
, 2004, , .
Web of Science® Times Cited: 22 |
Tanja Paskova, Plamen Paskov, E. M. Goldys, Vanya Darakchieva, U Södervall, M Godlewski, M Zielinski, E Valcheva, C Carlström, Qamar Ul Wahab and Bo Monemar
Characterization of mass-transport grown GaN by hydride vapour-phase epitaxy
Journal of Crystal Growth, 2004, 273( 1-2), 118-128.
Web of Science® Times Cited: 5 |
Hamid Harati Zadeh, Bo Monemar, Plamen Paskov, Peder Bergman, Bo Sernelius, Per-Olof Holtz, M Iwaya, S Kamiyama, H Amano and I Akasaki
Photoluminescence study of Si-doped GaN/Al0.07Ga0.93N multiple quantum wells with different dopant position
Applied Physics Letters, 2004, 84(25), 5071-5073.
Web of Science® Times Cited: 9 |
Vanya Darakchieva, Plamen Paskov, E Valcheva, Tanja Paskova, Bo Monemar, M Schubert, H Lu and W.J. Schaff
Deformation potentials of the E1 (TO) and E2 modes of InN
Applied Physics Letters, 2004, 84(18), 3636-3638.
Web of Science® Times Cited: 28 |
Vanya Darakchieva, Tanja Paskova, Plamen Paskov, Bo Monemar, N. Ashkenov and M. Schubert
Residual strain in HVPE GaN free-standing and re-grown homoepitaxial layers
Physica status solidi. A, Applied research, 2003, 195(3), 516-522.
Web of Science® Times Cited: 13 |
Vanya Darakchieva, Plamen Paskov, Tanja Paskova, E. Valcheva, Bo Monemar and M. Heuken
Lattice parameters of GaN layers grown on a-plane sapphire: Effect of in-plane strain anisotropy
Applied Physics Letters, 2003, 82(5), 703-705.
Web of Science® Times Cited: 19 |
Bo Monemar, Plamen Paskov, H. Haratizadeh, Per-Olof Holtz, Peder Bergman, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
Photoluminescence of InGaN/GaN and AlGaN/GaN multiple quantum well structures: Role of depletion fields and polarization fields
Physica status solidi. A, Applied research, 2003, 195(3), 523-527.
Web of Science® Times Cited: 5 |
B. Arnaudov, Tanja Paskova, O. Valassiades, Plamen Paskov, S. Evtimova, Bo Monemar and M. Heuken
Magnetic-field-induced localization of electrons in InGaN/GaN multiple quantum wells
Applied Physics Letters, 2003, 83(13), 2590-2592.
Web of Science® Times Cited: 1 |
V. Darakchieva, Plamen Paskov, Mattias Schubert, Tanja Paskova, Hans Arwin, Bo Monemar, H. Amano and I. Akasaki
Strain evolution and phonons in AlN/GaN superlattices
, 2003, , .
|
Bo Monemar, Plamen Paskov, Hamid Harati Zadeh, Per-Olof Holtz, Peder Bergman, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
Photoluminescence of n-doped InGaN/GaN and AlGaN/GaN Multiple Quantum Well structures, role of depletion fields and polarization fields
Physica status solidi. A, Applied research, 2003, 195, 523.
Web of Science® Times Cited: 5 |
Bo Monemar, Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Peder Bergman, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum well structures
Physica status solidi. B, Basic research, 2003, 237(1), 353-364.
Web of Science® Times Cited: 21 |
Tanja Paskova, Vanya Darakchieva, E. Valcheva, Plamen Paskov, Bo Monemar and M. Heuken
In-plane epitaxial relationships between a-plane sapphire substrates and GaN layers grown by different techniques
Journal of Crystal Growth, 2003, 257(1-2), 1-6.
Web of Science® Times Cited: 3 |
Bo Monemar, Plamen Paskov, Galia Pozina, JP Bergman, S Kamiyama, M Iwaya, H Amano and I Akasaki
Influence of depletion fields on photoluminescence of n-doped InGaN/GaN multiple quantum well structures
Physica status solidi. A, Applied research, 2002, 192(1), 21-26.
Web of Science® Times Cited: 4 |
Bo Monemar, Plamen Paskov, JP Bergman, Galia Pozina, Tanja Paskova, S Kamiyama, M Iwaya, H Amano and I Akasaki
Photoluminescence of excitons in InxGa1-xN/InyGa1-yN multiple quantum wells
Physica status solidi. A, Applied research, 2002, 190(1), 161-166.
Web of Science® Times Cited: 2 |
Vanya Darakchieva, Jens Birch, Plamen Paskov, Sukkaneste Tungasmita, Tanja Paskova and Bo Monemar
Strain evolution in high temperature AlN buffer layers for HVPE-GaN growth
Physica status solidi. A, Applied research, 2002, 190(1), 59-64.
Web of Science® Times Cited: 2 |
Vanya Darakchieva, Plamen Paskov, Tanja Paskova, Jens Birch, Sukkaneste Tungasmita and Bo Monemar
Deformation potentials of the E-1(TO) mode in AlN
Applied Physics Letters, 2002, 80(13), 2302-2304.
Web of Science® Times Cited: 16 |
Plamen Paskov, Vanya Darakchieva, Tanja Paskova, Per-Olof Holtz and Bo Monemar
Anisotropy of the in-plane strain in GaN grown on A-plane sapphire
Physica status solidi. B, Basic research, 2002, 234(3), 892-896.
Web of Science® Times Cited: 3 |
Plamen Paskov, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
Phonon-assisted photoluminescence in InGaN/GaN multiple quantum wells
Physica status solidi. B, Basic research, 2002, 234(3), 755-758.
Web of Science® Times Cited: 13 |
Plamen Paskov, Tanja Paskova, Per-Olof Holtz and Bo Monemar
Anisotropy of the free exciton emission in GaN grown on a-plane sapphire
Physica status solidi. A, Applied research, 2002, 190(1), 75-79.
Web of Science® Times Cited: 18 |
Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
Effect of n-type modulation doping on the photoluminescence of GaN/Al0.07Ga0.93N multiple quantum wells
Applied Physics Letters, 2002, 80(8), 1373.
Web of Science® Times Cited: 15 |
Bo Monemar, Plamen Paskov, JP Bergman, Galia Pozina, Vanya Darakchieva, M Iwaya, S Kamiyama, H Amano and I Akasaki
Photoluminescence in n-doped In0.1Ga0.9N/In0.01Ga0.99N multiple quantum wells
MRS Internet journal of nitride semiconductor research, 2002, 7(7), 1.
Web of Science® Times Cited: 8 |
Tanja Paskova, Plamen Paskov, Vanya Darakchieva, Sukkaneste Tungasmita, Jens Birch and Bo Monemar
Defect reduction in HVPE growth of GaN and related optical spectra
Physica status solidi. A, Applied research, 2001, 183(1), 197-203.
Web of Science® Times Cited: 9 |
Plamen Paskov, Per-Olof Holtz, Bo Monemar, JM Garcia, WV Schoenfeld and PM Petroff
Excited-state magnetoluminescence of InAs/GaAs self-assembled quantum dots
Japanese Journal of Applied Physics, 2001, 40(3B), 1998-2001.
|
Plamen Paskov, Tanja Paskova, Per-Olof Holtz and Bo Monemar
Spin-exchange splitting of excitons in GaN
Physical Review B. Condensed Matter and Materials Physics, 2001, 64(11), .
Web of Science® Times Cited: 28 |
Bo Monemar, Plamen Paskov, Galia Pozina, Tanja Paskova, JP Bergman, M Iwaya, S Nitta, H Amano and I Akasaki
Optical characterization of InGaN/GaN MQW structures without in phase separation
Physica status solidi. B, Basic research, 2001, 228(1), 157-160.
Web of Science® Times Cited: 5 |
Tanja Paskova, Plamen Paskov, EM Goldys, Vanya Darakchieva, U Sodervall, M Godlewski, M Zielinski, E Valcheva, CF Carlstrom and Qamar Ul Wahab
Mass transport growth and properties of hydride vapour phase epitaxy GaN
Physica status solidi. A, Applied research, 2001, 188(1), 447-451.
Web of Science® Times Cited: 2 |
E. Valcheva, Tanja Paskova, M.V. Abrashev, Per Persson, Plamen Paskov, E.M. Goldys, R. Beccard, M. Heuken and Bo Monemar
Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN
Materials Science & Engineering, 2001, 82(1-3), 35-38.
Web of Science® Times Cited: 5 |
Tanja Paskova, E.M. Goldys, Plamen Paskov, Qamar Ul Wahab, Lars Wilzén, Michel P de Jong and Bo Monemar
Mass transport growth and optical emission properties of hydride vapor phase epitaxy GaN
Applied Physics Letters, 2001, 78(26), 4130-4132.
Web of Science® Times Cited: 6 |
Tanja Paskova, E. Valcheva, Jens Birch, Sukkaneste Tungasmita, Per Persson, Plamen Paskov, S. Evtimova, M. Abrashev and Bo Monemar
Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer
Journal of Crystal Growth, 2001, 230(3-4), 381-386.
Web of Science® Times Cited: 18 |
E. Valcheva, Tanja Paskova, M.V. Abrashev, Plamen Paskov, Per Persson, E.M. Goldys, R. Beccard, M. Heuken and Bo Monemar
Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates
Journal of Applied Physics, 2001, 90(12), 6011-6016.
Web of Science® Times Cited: 13 |
Bo Monemar, Weimin Chen, Plamen Paskov, Tanja Paskova, Galia Pozina and Peder Bergman
The 3.466 eV Bound Exciton in GaN
Physica status solidi. B, Basic research, 2001, 228(2), 489-492.
Web of Science® Times Cited: 7 |
Plamen Paskov, Per-Olof Holtz, Bo Monemar, J.M. Garcia, W.V. Schoenfeld and P.M. Petroff
Optical up-conversion processes in InAs quantum dots
Japanese Journal of Applied Physics, 2001, 40(3 B), 2080-2083.
Web of Science® Times Cited: 5 |
Plamen Paskov, Tanja Paskova, Per-Olof Holtz and Bo Monemar
Internal structure of free excitons in GaN
Physica status solidi. B, Basic research, 2001, 228(2), 467-470.
Web of Science® Times Cited: 3 |
Plamen Paskov, Per-Olof Holtz, S. Wongmanerod, Bo Monemar, J.M. Garcia, W.V. Schoenfeld and P.M. Petroff
Auger processes in InAs self-assembled quantum dots
Physica. E, Low-Dimensional systems and nanostructures, 2000, 6(1), 440-443.
Web of Science® Times Cited: 7 |
Plamen Paskov, Per-Olof Holtz, Bo Monemar, J.M. Garcia, W.V. Schoenfeld and P.M. Petroff
Magnetoluminescence of highly excited InAs/GaAs self-assembled quantum dots
Physical Review B. Condensed Matter and Materials Physics, 2000, 62(11), 7344-7349.
Web of Science® Times Cited: 25 |
S. Wongmanerod, Plamen Paskov, Per-Olof Holtz, Bo Monemar, O. Mauritz, K. Reginski and M. Bugajski
Magneto-optical studies of highly p-type modulation-doped GaAs/AlxGa1-xAs quantum wells
Physical review. B, Condensed matter and materials physics, 2000, 62, 15952.
Web of Science® Times Cited: 2 |
Plamen Paskov, Per-Olof Holtz, Bo Monemar, W. Schoenfeld, J.M. Garcia and P.M. Petroff
Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots
Applied Physics Letters, 2000, 77(6), 812-814.
Web of Science® Times Cited: 55 |
Chapters in Books
Conference Articles
Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, David Lindgren, Lars Samuelson, Xianfeng Ni, Hadis Morkoç, Tanya Paskova, Zhaoxia Bi and Jonas Ohlsson
Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates
Proc. SPIE 7939, 2011.
Fulltext
|
Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, H. Amano, I. Akasaki, S. Figge, D. Hommel, Tanja Paskova and A. Usiui
Mg related acceptors in GaN
Phys. Status Solidi C 7, 2010.
Web of Science® Times Cited: 3 Fulltext
|
Andreas Gällström, Björn Magnusson, A. Thuaire, Anne Henry, Plamen Paskov and Erik Janzén
The Electronic Structure of the UD-4 defect in 4H, 6H and 15R SiC
Materials Science Forum, Vols. 600-603, 2009.
Web of Science® Times Cited: 1
|
Plamen Paskov, Bo Monemar, Tanja Paskova, E.A. Preble, A.D. Hanser and K.R. Evans
Optical characterization of bulk GaN substrates with c-, a-, and m-plane surfaces
IWN 2008, 2008.
Web of Science® Times Cited: 2
|
Bo Monemar, Galia Pozina, Plamen Paskov, Carl Hemmingsson, Peder Bergman, T. Kawashima, H. Amano, I. Akasaki and A. Usui
Acceptors in Mg doped GaN, optical properties and metastability
IWN 2008,2008, 2008.
|
Y. Honda, T. Hikosaka, M. Yamaguchi, N. Sawaki, Galia Pozina, Fredrik Karlsson, Vanya Darakchieva, Plamen Paskov and Bo Monemar
DAP emission band in a carbon doped (1-101)GaN grown ob (001) Si substrate
Phys. Stat. Sol. (c) Vol. 6, 2008.
Web of Science® Times Cited: 3
|
Bo Monemar, Plamen Paskov, Galia Pozina, Peder Bergman, Carl Hemmingsson, A.A. Toropov, Tatiana Choubina, T. Kawashima, H. Amano, I. Akasaki, A. Usui and Tanja Paskova
Properties of dopants and defects in GaN from bound exciton spectra
Meijo International Symposium on Nitride Semiconductors 2008,2008, 2008.
|
Bo Monemar, Plamen Paskov, Galia Pozina, Peder Bergman, Carl Hemmingsson, T. Kawashima, H. Amano, I. Akasaki and A. Usui
Optical properties and acceptor states in Mg doped GaN
8^th Akasaki Symposium,2008, 2008.
|
Bo Monemar, Plamen Paskov, Peder Bergman, A.A. Toropov, T.V. Shubina and A. Usui
Recombination dynamics of free and bound excitons in bulk GaN
7th International Conference on Physics of Light-Matter Coupling in Nanostructures,2007, 2008.
|
Plamen Paskov, Bo Monemar, D. Iida, T. Kawashima, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
Nonpolar GaN layers grown by sidewall epitaxial lateral overgrowth: optical evidences for a reduced stacking fault density
Proc. of the 7th International Conference on Nitride Semiconductors,2007, 2008.
|
Plamen Paskov, Bo Monemar, Tanja Paskova, S. Kamiyama, H. Amano and I. Akasaki
Photoluminescence study of near-surface GaN/AlN superlattices
International Symposium on Integrated Optoelectronic Devices Photonics West 2008,2008, 2008.
|
Tanja Paskova, A.D. Hanser, E. Preble, K. Evans, R. Kroeger, F. Toumisto, R. Kersting, R. Alcorn, S. Ashley, C. Pagel, E. Valcheva, Plamen Paskov and Bo Monemar
Defect and emission distributions in bulk GaN grown in polar and nonpolar directions: a comparative analysis
International Symposium on Integrated Optoelectronic Devices Photonics West 2008,2008, 2008.
|
C-W. Hsu, A. Ganguly, C-P. Chen, Plamen Paskov, Per-Olof Holtz, K-H. Chen and L-C. Chen
Luminescent Behaviors of GaN Nanowires with Different Surface Conditions: Toward Optical DNA Sensing
International Conference on One-Dimensional Nanostructures ICON,2007, 2007.
|
Galia Pozina, Bo Monemar, Plamen Paskov, Carl Hemmingsson, Lars Hultman, H. Amano, I. Akasaki, Tanja Paskova, S. Figge, D. Hommel and A. Usui
Metastability of the UV luminescence in Mg-doped GaN layers grown by MOVPE on quasi-bulk GaN templates
, 2007.
Web of Science® Times Cited: 4
|
Plamen Paskov, Bo Monemar, A. Toropov, Peder Bergman and A. Usui
Two-electron transition spectroscopy of shallow donors in bulk GaN
Proc. of the International Workshop on Nitride Semiconductors IWN2006,2006, 2007.
Web of Science® Times Cited: 11
|
Tanja Paskova, L. Becker, T. Böttcher, D. Hommel, Plamen Paskov and Bo Monemar
Bending in HVPE grown GaN films: origin and reduction possibilities
Proc. of the International Workshop on Nitride Semiconductors IWN2006,2006, 2007.
Web of Science® Times Cited: 1
|
Tanja Paskova, R. Kroeger, D. Hommel, Plamen Paskov, Bo Monemar, E. Preble, A. Hanser, N.M. Williams and M. Tutor
Nonpolar a- and m-plane bulk GaN sliced from boules: structural and optical characteristics
Proc. of the International Workshop on Nitride Semiconductors IWN2006,2006, 2007.
Web of Science® Times Cited: 12
|
Plamen Paskov, Bo Monemar, S. Kamiyama, H. Amano and I. Akasaki
Optical properties of undoped, n-doped and p-doped GaN/AlN superlattices
Proc. of the MRS Fall Meeting,2006, 2007.
|
Bo Monemar, Plamen Paskov, Peder Bergman, A.A. Toropov and Tatiana Shubina
Recent developments in the III-nitride materials
Proc. of the International Workshop on Nitride Semiconductors IWN2006,2006, 2007.
|
Tanja Paskova, Plamen Paskov, Vanya Darakchieva, R. Kröger, D. Hommel, Bo Monemar, E. Preble, A. Hanser, N.M. Williams and M. Tudor
Strain-free low-defect-density bulk GaN with nonpolar orientation
Proc. of the MRS Fall Meeting,2006, 2007.
|
D.D. Ree, K.S. Zhuravlev, V.G. Mansurov, A.Yu. Nikitin, Plamen Paskov and Per-Olof Holtz
Microphotoluminescence study of single and multilayered structure with GaN/AlN quantum dots
ICPS 28th International Conference on the Physics of Semiconductors,2006, 2006.
|
Hamid Harati Zadeh, Bo Monemar, Plamen Paskov, Per-Olof Holtz, Peder Bergman, H. Amano and I. Akasaki
Optical Studies of Wide Band Gap III-Nitride Semiconductor Quantum Wells and Superlattices
European Materials Research Society E-MRS fall meeting 2006,2006, 2006.
|
Bo Monemar, Plamen Paskov, Peder Bergman, T. Malinauskas, K. Jarasiunas, A.A. Toropov, T.V. Shubina and A. Usui
Time-resolved spectroscopy of excitons bound at shallow neutral donors in HVPE GaN
MRS Fall Meeting,2005, 2006.
|
T. Paskova, R. Kroeger, Plamen Paskov, S. Figge, D. Hommel, Bo Monemar, B.A. Haskell, P. Fini, J.S. Speck and S. Nakamura
Microscopic emission properties of nonpolar a-plane GaN grown by HVPE
International Symposium on Integrated Optoelectronic Devices Photonics West 2006,2006, 2006.
|
Hans Arwin, Vanya Darakchieva, Tanja Paskova, Plamen Paskov, Bo Monemar, Mattias Schubert, S Figge, D Hommel, B A Haskell, P T Fini and S Nakamura
Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a-plane GaN
ICSN-6,2005, 2005.
|
Tanja Paskova, T. Suski, M. Bockowski, Plamen Paskov, Vanya Darakchieva, Bo Monemar, F. Tuomisto, K. Saarinen, N. Ashkenov, M. Schubert, C. Röder and D. Hommel
High pressure annealing of HVPE GaN free-standing films: redistribution of defects and stress
MRS Fall Meeting,2004, 2005.
|
Bo Monemar, Plamen Paskov, F. Tuomisto, K. Saarinen, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
Oxygen related shallow acceptor in GaN
MRS Fall Meeting,2004, 2005.
|
Plamen Paskov, Tanja Paskova, Per-Olof Holtz and Bo Monemar
Polarisation dependent spectroscopy of the near bandgap emission in free-standing GaN
2003 MRS Fall Meeting,2003, 2004.
|
Bo Monemar, Plamen Paskov, H. Haratizadeh, Galia Pozina, Peder Bergman, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures
Proceedings of SPIE, the International Society for Optical Engineering, 2003.
|
Tanja Paskova, Vanya Darakchieva, E. Valcheva, Plamen Paskov, Bo Monemar and M. Heuken
Growth of GaN on a-plane sapphire: In-plane epitaxial relationships and lattice parameters
Physica status solidi. B, Basic research, 2003.
Web of Science® Times Cited: 5
|
Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
Photoluminescence study of Si doped GaN/AlGaN multi quantum wells
ICPS 2002,2002, 2003.
|
Bo Monemar, Plamen Paskov, Tanja Paskova, Peder Bergman, Galia Pozina, Weimin Chen, P.N. Hai, Irina A. Buyanova, H. Amano and I. Akasaki
Optical characterization of III-nitrides
, 2002.
Web of Science® Times Cited: 19
|
Tanja Paskova, Vanya Darakchieva, Plamen Paskov, U. Sodervall and Bo Monemar
Growth and separation related properties of HVPE-GaN free-standing films
Journal of Crystal Growth, 2002.
Web of Science® Times Cited: 25
|
Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
Photoluminescence study of Si doped GaN/GaN/Al0.07Ga0.93N multi quantum wells
NANO-7/ECOSS-21,2002, 2002.
|
Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
The influence of Si-donor doping on the exciton localization in modulation- doped GaN/AlGaN multi quantum wells
14th Indium Phosphide and Related Materials Conference IPRM 2002,2002, 2002.
|
Plamen Paskov, Per-Olof Holtz, Bo Monemar, J.M. Garcia, W.V. Schoenfeld and P.M. Petroff
Optical up-conversion processes in InAs quantum dots
the 25th International Conference on the Physics of Semiconductors ICPS-25,2000, 2000.
|
Ph.D., Lic. Theses
