Publications for Plamen Paskov
Co-author map based on ISI articles 2007-

Keywords

vapor thick temperature strain spectra sapphire quantum pl photoluminescence p>we optical hydride gan excitons exciton epitaxy energy emission decay aln

Journal Articles

Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, Sergey Khromov, V. N. Izyumskaya, V. Avrutin, X. Li, H. Morkoc, H. Amano, M. Iwaya and I. Akasaki
  Properties of the main Mg-related acceptors in GaN from optical and structural studies
  Journal of Applied Physics, 2014, 115(5), 053507.
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Bo Monemar, Sergey Khromov, Galia Pozina, Plamen Paskov, Peder Bergman, Carl Hemmingsson, Lars Hultman, Hiroshi Amano, Vitaliy Avrutin, Xing Li and Hadis Morkoc
  Luminescence of Acceptors in Mg-Doped GaN
  Japanese Journal of Applied Physics, 2013, 52(8), .
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Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, David Lindgren, Lars Samuelson, Xianfeng Ni, Hadis Morkoc, Tanya Paskova, Zhaoxia Bi and Jonas Ohlsson
  Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates
  PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208(7), 1532-1534.
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 Web of Science® Times Cited: 1

Chih-Wei Hsu, Abhijit Ganguly, Chin-Pei Chen, Chun-Chiang Kuo, Plamen Paskov, Per-Olof Holtz, Li-Chyong Chen and Kuei-Hsien Chen
  Optical properties of functionalized GaN nanowires
  JOURNAL OF APPLIED PHYSICS, 2011, 109(5), 053523.
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 Web of Science® Times Cited: 5

Bo Monemar, Plamen Paskov, Peder Bergman, Galia Pozina, A.A. Toropov, T.V. Shubina, T. Malinauskas and A. Usui
  Transient photoluminescence of shallow donor bound excitons in GaN
  Physical Review B. Condensed Matter and Materials Physics, 2010, 82, 235202.
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 Web of Science® Times Cited: 17

Bernard Gil, Pierre Bigenwald, Plamen Paskov and Bo Monemar
  Internal structure of acceptor-bound excitons in wide-band-gap wurtzite semiconductors
  PHYSICAL REVIEW B, 2010, 81(8), 085211.
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 Web of Science® Times Cited: 5

Tanja Paskova, E. A. Preble, A. D. Hanser, K. R. Evans, R. Kröger, Plamen Paskov, A. J. Cheng, M. Park, J. A. Grenko and M. A. L. Johnson
  Polar and nonpolar HVPE GaN substrates: impact of doping on the structural, electrical and optical characteristics
  Physica Status Solidi. C, Current topics in solid state physics, 2009, 6(2), 344-347.
 Web of Science® Times Cited: 4

Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, T Kawashima, H Amano, I Akasaki, T Paskova, S Figge, D Hommel and A Usui
  Evidence for Two Mg Related Acceptors in GaN
  PHYSICAL REVIEW LETTERS, 2009, 102(23), 235501.
 Web of Science® Times Cited: 32

Bo Monemar, Plamen Paskov, Peder Bergman, A.A. Toropov, T.V. Shubina and A. Usui
  Recombination dynamics of free and bound excitons in bulk GaN
  Superlattices and Microstructures, 2008, 43(5-6), 610-614.
 Web of Science® Times Cited: 1

Bo Monemar, Plamen Paskov, Peder Bergman, A.A. Toropov, T.V. Shubina, T. Malinauskas and A. Usui
  Recombination of free and bound excitons in GaN
  Physica status solidi. B, Basic research, 2008, 245(9), 1723-1740.
 Web of Science® Times Cited: 34

A.A. Toropov, Yu. E. Kitaev, Tatiana Shubina, Plamen Paskov, Peder Bergman and Bo Monemar
  Polarization-resolved phonon-assisted optical transitions of bound excitons in wurtzite GaN
  , 2008, , .
 Web of Science® Times Cited: 6

Galia Pozina, Carl Hemmingsson, Plamen P. Paskov, Peder Bergman, Bo Monemar, T. Kawashima, H. Amano, I. Akasaki and A. Usui
  Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates
  Applied Physics Letters, 2008, 92(15), 151904.
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 Web of Science® Times Cited: 6

Vanya Darakchieva, T. Paskova, M. Schubert, Plamen Paskov, Hans Arwin, Bo Monemar, D. Hommel, M. Heuken, J. Off, B.A. Haskell, P.T. Fini, J.S. Speck and S. Nakamura
  Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers
  Journal of Crystal Growth, 2007, 300(1), 233-238.
 Web of Science® Times Cited: 4

Carl Hemmingsson, Plamen Paskov, Galia Pozina, M. Heuken, B. Schineller and Bo Monemar
  Hydride vapour phase epitaxy growth and characterization of thick GaN using a vertical HVPE reactor
  Journal of Crystal Growth, 2007, 300(1), 32-36.
 Web of Science® Times Cited: 12

Bo Monemar, Plamen Paskov, Peder Bergman, S. Keller, S. P. DenBaars and U. K. Mishra
  Effect of an (Al,In)N insertion layer on the radiative emission properties of (In,Ga)N/GaN multiple quantum well structures
  Physica status solidi. A, Applied research, 2007, 204(1), 304-308.
 Web of Science® Times Cited: 1

M. Esmaeili, M. Sabooni, H. Haratizadeh, Plamen Paskov, Bo Monemar, Per-Olof Holtz, S. Kamiyama and M. Iwaya
  Optical properties of GaN/AlGaN QW nanostructures with different well and barrier widths
  Journal of Physics: Condensed Matter, 2007, 19(35), .
 Web of Science® Times Cited: 5

Hamid Harati Zadeh, Bo Monemar, Plamen Paskov, Per-Olof Holtz, E Valcheva, M Iwaya, S Kamiyama, H Amano and I Akasaki
  Optical observation of discrete well width fluctuations in wide band gap III-nitride quantum wells
  Physica status solidi. B, Basic research, 2007, 244(5), 1727-1734.
 Web of Science® Times Cited: 3

Tanja Paskova, L. Becker, T. Böttcher, D. Hommel, Plamen Paskov and Bo Monemar
  Effect of sapphire-substrate thickness on the curvature of thick GaN films grown by hydride vapor phase epitaxy
  Journal of Applied Physics, 2007, 102(12), .
 Web of Science® Times Cited: 3

Galia Pozina, Plamen Paskov, Peder Bergman, Carl Hemmingsson, Lars Hultman, Bo Monemar, H. Amano and A. Usui
  Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates
  Applied Physics Letters, 2007, 91(22), .
 Web of Science® Times Cited: 11

M. Sabooni, M. Esmaeili, Hamid Harati Zadeh, Bo Monemar, Plamen Paskov, Per-Olof Holtz, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Exciton localization behaviour in different well width undoped GaN/Al 0.07Ga0.93N nanostructures
  , 2007, , .
 Web of Science® Times Cited: 4

B. Gil, P. Bigenwald, M. Leroux, Plamen Paskov and Bo Monemar
  Internal structure of the neutral donor-bound exciton complex in cubic zinc-blende and wurtzite semiconductors
  Physical Review B. Condensed Matter and Materials Physics, 2007, 75(8), .
 Web of Science® Times Cited: 9

M. Esmaeili, Hamid Harati Zadeh, Bo Monemar, Plamen Paskov, Per-Olof Holtz, Peder Bergman, M. Iwaya, S. Kamiyama, H. Amano and I Akasaki
  Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: Influence of Al composition and Si doping
  Nanotechnology, 2007, 18(2), .
 Web of Science® Times Cited: 7

Vanya Darakchieva, Tanja Paskova, M. Schubert, Hans Arwin, Plamen Paskov, Bo Monemar, D. Hommel, J. Off, F. Scholz, M. Heuken, B.A. Haskell, P.T. Fini, S.J. Speck and S. Nakamura
  Anisotropic strain and phonon deformation potentials in GaN
  Physical Review B. Condensed Matter and Materials Physics, 2007, 75(19), 195217.
 Web of Science® Times Cited: 44

Bo Monemar, Plamen Paskov, Peder Bergman, A.A. Toropov and T.V. Shubina
  Recent developments in the III-nitride materials
  Physica status solidi. B, Basic research, 2007, 244(6), 1759-1768.
 Web of Science® Times Cited: 20

C. Roder, S. Einfeldt, S. Figge, T. Paskova, D. Hommel, Plamen Paskov, Bo Monemar, U. Behn, B.A. Haskell, P.T. Fini and S. Nakamura
  Stress and wafer bending of a -plane GaN layers on r -plane sapphire substrates
  Journal of Applied Physics, 2006, 100(10), .
 Web of Science® Times Cited: 36

Bo Monemar, Plamen Paskov, Peder Bergman, Tanja Paskova, Carl Hemmingsson, T Malinauskas, K Jarasiunas, P Gibart and B Beaumont
  Time-resolved spectroscopy of excitons bound at shallow neutral donors in HVPE GaN
  Physica. B, Condensed matter, 2006, 376, 482-485.
 Web of Science® Times Cited: 5

Plamen Paskov, R Schifano, Tanja Paskova, T Malinauskas, Peder Bergman, Bo Monemar, S Figge and D Hommel
  Structural defect-related emissions in nonpolar a-plane GaN
  Physica. B, Condensed matter, 2006, 376, 473-476.
 Web of Science® Times Cited: 26

Bo Monemar, Plamen Paskov, Peder Bergman, M Iwaya, S Kamiyama, H Amano and I Akasaki
  A hydrogen-related shallow donor in GaN?
  Physica. B, Condensed matter, 2006, 376, 460-463.
 Web of Science® Times Cited: 8

Bo Monemar, Plamen Paskov, Peder Bergman, Tanja Paskova, S Figge, J Dennemarck and D Hommel
  The dominant shallow 0.225 eV acceptor in GaN
  Physica status solidi. B, Basic research, 2006, 243(7), 1604-1608.
 Web of Science® Times Cited: 15

Vanya Darakchieva, Tanja Paskova, Plamen Paskov, Hans Arwin, M Schubert, Bo Monemar, S Figge, D Hommel, BA Haskell, PT Fini and S Nakamura
  Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a-plane GaN
  Physica status solidi. B, Basic research, 2006, 243(7), 1594-1598.
 Web of Science® Times Cited: 2

Carl Hemmingsson, Plamen Paskov, Galia Pozina, M. Heuken, B. Schineller and Bo Monemar
  Growth of bulk GaN in a vertical hydride vapour phase epitaxy reactor
  Superlattices and Microstructures, 2006, 40( 4-6 SPEC. ISS.), 205-213.
 Web of Science® Times Cited: 14

Bo Monemar, Plamen Paskov, F. Tuomisto, K. Saarinen, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki and S. Kimura
  Dominant shallow acceptor related to oxygen and hydrogen in GaN
  Physical review. B, Condensed matter and materials physics, 2006, 376-377, 440-443.
 Web of Science® Times Cited: 12

K.S. Zhuravlev, D.D. Ree, V.G. Mansurov, A.Yu. Nikitin, Plamen Paskov and Per-Olof Holtz
  Microphotoluminescence of GaN/AlN quantum dots grown by MBE
  Physica Status Solidi. C, Current topics in solid state physics, 2006, 3, 2048-2051.

T. Paskova, Vanya Darakchieva, Plamen Paskov, Bo Monemar, T. Suski, M. Bockowski, N. Ashkenov and M. Schubert
  Bending in HVPE GaN free-standing films: effects of laser lift-off, polishing and high temperature annealing
  Physica Status Solidi. C, Current topics in solid state physics, 2006, 3, 1475-1478.

Bo Monemar, Plamen Paskov, Peder Bergman, A.A. Toropov, T.V. Shubina, S. Figge, T. Paskova, D. Hommel, A. Usui, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
  Optical signatures of dopants in GaN
  Materials Science in Semiconductor Processing, 2006, 9( 1-3), 168-174.
 Web of Science® Times Cited: 5

Plamen Paskov, Tanja Paskova, Bo Monemar, S. Figge, D. Hommel, B.A. Haskell, P.T. Fini, S.J. Speck and S. Nakamura
  Optical properties of nonpolar a-plane GaN layers
  Superlattices and Microstructures, 2006, 40( 4-6 SPEC. ISS.), 253-261.
 Web of Science® Times Cited: 19

B. Arnaudov, Plamen Paskov, Hamid Harati Zadeh, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Radiative recombination mechanism in highly modulation doped GaN/AlGaN multiple quantum wells
  Physica Status Solidi. C, Current topics in solid state physics, 2006, 6, 1888-1891.
 Web of Science® Times Cited: 4

Plamen Paskov, R. Schifano, T. Malinauskas, T. Paskova, Peder Bergman, Bo Monemar, S. Figge, D. Hommel, B.A. Haskell, P.T. Fini, J.S. Speck and S. Nakamura
  Photoluminescence of a -plane GaN: comparison between MOCVD and HVPE grown layers
  Physica Status Solidi. C, Current topics in solid state physics, 2006, 6, 1499-1502.

T. Paskova, D. Hommel, Plamen Paskov, Vanya Darakchieva, Bo Monemar, M. Bockowski, T. Suski, I. Grzegory, T. Tuomisto, K. Saarinen, N. Ashkenov and M. Schubert
  Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy
  Applied Physics Letters, 2006, 88(14), 141909.
 Web of Science® Times Cited: 21

Tanja Paskova, B. Arnaudov, Plamen Paskov, E.M. Goldys, S. Hautakangas, K. Saarinen, U. Sodervall and Bo Monemar
  Donor-acceptor pair emission enhancement in mass-transport-grown GaN
  Journal of Applied Physics, 2005, 98(3), 033508.
 Web of Science® Times Cited: 11

Plamen Paskov, R. Schifano, Bo Monemar, T. Paskova, S. Figge and D. Hommel
  Emission properties of a -plane GaN grown by metal-organic chemical-vapor deposition
  Journal of Applied Physics, 2005, 98(9), 093519.
 Web of Science® Times Cited: 125

TJ Ochalski, A Grzegorczyk, M Rudzinski, PK Larsen, Per-Olof Holtz, Peder Bergman and Plamen Paskov
  Optical study of AlGaN/GaN based HEMT structures grown on sapphire and SiC
  Physica status solidi. A, Applied research, 2005, 202(7), 1300-1307.
 Web of Science® Times Cited: 2

Tanja Paskova, Vanya Darakchieva, Plamen Paskov, Jens Birch, E Valcheva, Per Persson, B Arnaudov, S Tungasmitta and Bo Monemar
  Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers
  Journal of Crystal Growth, 2005, 281(1), 55-61.
 Web of Science® Times Cited: 46

Bo Monemar, Tanja Paskova, Carl Hemmingsson, Henrik Larsson, Plamen Paskov, Ivan Gueorguiev Ivanov and Aleksander Kasic
  Growth of thick GaN layers by hydride vapor phase epitaxy
  Journal of Ceramic Processing Research, 2005, 6(2), 153-162.

T.J. Ochalski, A. Grzegorczyk, M. Rudzinski, P.K. Larsen, E. Kowalczyk, Per-Olof Holtz, Peder Bergman and Plamen Paskov
  Optical study of AlGaN/GaN based HEMT structures
  Physica Status Solidi. C, Current topics in solid state physics, 2005, 2, 2791-2794.

Plamen Paskov, Peder Bergman, Vanya Darakchieva, Tanja Paskova, Bo Monemar, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
  Photoluminescence of GaN/AlN superlattices grown by MOCVD
  Physica Status Solidi. C, Current topics in solid state physics, 2005, 2, 2345-2348.

Plamen Paskov, Peder Bergman, Bo Monemar, S. Keller, S.P. DenBaars and U.K. Mishra
  Spatially direct and indirect transitions in InGaN/GaN structures with coupled quantum wells
  Physica Status Solidi. C, Current topics in solid state physics, 2005, 2, 2337-2340.

B. Arnaudov, Tanja Paskova, Plamen Paskov, Björn Magnusson, Bo Monemar, H. Lu and W.J. Schaff
  On the nature of the near bandedge luminescence of InN epitaxial layers
  AIP Conference Proceedings, 2005, 772, 285-286.

Tanja Paskova, B. Arnaudov, Plamen Paskov, E.M. Goldys, S. Hautakangas, K. Saarinen, U. Sodervall and Bo Monemar
  Dominating behaviour of the donor-acceptor pair emission in mass-transport GaN
  AIP Conference Proceedings, 2005, 772, 261-262.

Tanja Paskova, Vanya Darakchieva, Plamen Paskov, Jens Birch, E. Valcheva, Per Persson, B. Arnaudov, S. Tungasmita and Bo Monemar
  Nonpolar a-plane HVPE GaN: growth and in-plane anisotropic properties
  Physica Status Solidi. C, Current topics in solid state physics, 2005, 2, 2027-2031.

Bo Monemar, Plamen Paskov and A. Kasic
  Optical properties of InN - The bandgap question
  Superlattices and Microstructures, 2005, 38(1), 38-56.
 Web of Science® Times Cited: 63

Vanya Darakchieva, E. Valcheva, Plamen Paskov, M. Schubert, Tanja Paskova, Bo Monemar, H. Amano and I. Akasaki
  Phonon mode behavior in strained wurtzite AlN/GaN superlattices
  Physical Review B. Condensed Matter and Materials Physics, 2005, 71(11), 115329.
 Web of Science® Times Cited: 17

Vanya Darakchieva, Tanja Paskova, Plamen Paskov, Bo Monemar, N. Ashkenov and M. Schubert
  Structural characteristics and lattice parameters of hydride vapor phase epitaxial GaN free-standing quasisubstrates
  Journal of Applied Physics, 2005, 97(1), 013517.
 Web of Science® Times Cited: 22

Tanja Paskova, Vanya Darakchieva, E Valcheva, Plamen Paskov, Ivan Gueorguiev Ivanov, Bo Monemar, T Bottcher, C Roder and D Hommel
  Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications: Strain distribution and wafer bending
  Journal of Electronic Materials, 2004, 33(5), 389-394.
 Web of Science® Times Cited: 15

B Arnaudov, Tanja Paskova, Plamen Paskov, Björn Magnusson, E Valcheva, Bo Monemar, H Lu, WJ Schaff, H Amano and I Akasaki
  Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
  Physical Review B. Condensed Matter and Materials Physics, 2004, 69(11), .
 Web of Science® Times Cited: 139

Tanja Paskova, Plamen Paskov, E Valcheva, Vanya Darakchieva, Jens Birch, A Kasic, B Arnaudov, Sukkaneste Tungasmita and Bo Monemar
  Polar and nonpolar GaN grown by HVPE: Preferable substrates for nitride-based emitting devices
  Physica status solidi. A, Applied research, 2004, 201(10), 2265-2270.
 Web of Science® Times Cited: 12

Bo Monemar, Plamen Paskov, H Haradizadeh, Peder Bergman, E Valcheva, Vanya Darakchieva, B Arnaudov, Tanja Paskova, Per-Olof Holtz, Galia Pozina, S Kamiyama, M Iwaya, H Amano and I Akasaki
  Optical investigation of AlGaN/GaN quantum wells and superlattices
  Physica status solidi. A, Applied research, 2004, 201(10), 2251-2258.

Plamen Paskov, Tanja Paskova, Per-Olof Holtz and Bo Monemar
  Polarized photoluminescence of exciton-polaritons in free-standing GaN
  Physica status solidi. A, Applied research, 2004, 201(4), 678-685.
 Web of Science® Times Cited: 9

H. Haratizadeh, Bo Monemar, Plamen Paskov, Per-Olof Holtz, Galia Pozina, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Time resolved photoluminescence study of Si modulation doped GaN/Al 0.07Ga0.93N multiple quantum wells
  Physica status solidi. B, Basic research, 2004, 241(5), 1124-1133.
 Web of Science® Times Cited: 9

Tanja Paskova, E. Valcheva, Plamen Paskov, Bo Monemar, A.M. Roskowski, R.F. Davis, B. Beaumont and P. Gibart
  HVPE-GaN: Comparison of emission properties and microstructure of films grown on different laterally overgrown templates
  Diamond and related materials, 2004, 13(4-8), 1125-1129.
 Web of Science® Times Cited: 6

B. Arnaudov, Tanja Paskova, Plamen Paskov, Björn Magnusson, E. Valcheva, Bo Monemar, H. Lu, W.J. Schaff, H. Amano and I. Akasaki
  Free-to-bound radiative recombination in highly conducting InN epitaxial layers
  Superlattices and Microstructures, 2004, 36(4-6), 563-571.
 Web of Science® Times Cited: 6

Vanya Darakchieva, Plamen Paskov, E. Valcheva, Tanja Paskova, M. Schubert, C. Bundesmann, H. Lu, W.J. Schaff and Bo Monemar
  Infrared ellipsometry and Raman studies of hexagonal InN films: Correlation between strain and vibrational properties
  Superlattices and Microstructures, 2004, 36(4-6), 573-580.
 Web of Science® Times Cited: 11

Plamen Paskov, Tanja Paskova, Per-Olof Holtz and Bo Monemar
  Polarized photoluminescence study of free and bound excitons in free-standing GaN
  , 2004, , .
 Web of Science® Times Cited: 24

Tanja Paskova, Plamen Paskov, E. M. Goldys, Vanya Darakchieva, U Södervall, M Godlewski, M Zielinski, E Valcheva, C Carlström, Qamar Ul Wahab and Bo Monemar
  Characterization of mass-transport grown GaN by hydride vapour-phase epitaxy
  Journal of Crystal Growth, 2004, 273( 1-2), 118-128.
 Web of Science® Times Cited: 5

Hamid Harati Zadeh, Bo Monemar, Plamen Paskov, Peder Bergman, Bo Sernelius, Per-Olof Holtz, M Iwaya, S Kamiyama, H Amano and I Akasaki
  Photoluminescence study of Si-doped GaN/Al0.07Ga0.93N multiple quantum wells with different dopant position
  Applied Physics Letters, 2004, 84(25), 5071-5073.
 Web of Science® Times Cited: 9

Vanya Darakchieva, Plamen Paskov, E Valcheva, Tanja Paskova, Bo Monemar, M Schubert, H Lu and W.J. Schaff
  Deformation potentials of the E1 (TO) and E2 modes of InN
  Applied Physics Letters, 2004, 84(18), 3636-3638.
 Web of Science® Times Cited: 28

Vanya Darakchieva, Tanja Paskova, Plamen Paskov, Bo Monemar, N. Ashkenov and M. Schubert
  Residual strain in HVPE GaN free-standing and re-grown homoepitaxial layers
  Physica status solidi. A, Applied research, 2003, 195(3), 516-522.
 Web of Science® Times Cited: 13

Vanya Darakchieva, Plamen Paskov, Tanja Paskova, E. Valcheva, Bo Monemar and M. Heuken
  Lattice parameters of GaN layers grown on a-plane sapphire: Effect of in-plane strain anisotropy
  Applied Physics Letters, 2003, 82(5), 703-705.
 Web of Science® Times Cited: 21

Bo Monemar, Plamen Paskov, H. Haratizadeh, Per-Olof Holtz, Peder Bergman, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Photoluminescence of InGaN/GaN and AlGaN/GaN multiple quantum well structures: Role of depletion fields and polarization fields
  Physica status solidi. A, Applied research, 2003, 195(3), 523-527.
 Web of Science® Times Cited: 5

Tanja Paskova, Vanya Darakchieva, E. Valcheva, Plamen Paskov, Bo Monemar and M. Heuken
  In-plane epitaxial relationships between a-plane sapphire substrates and GaN layers grown by different techniques
  Journal of Crystal Growth, 2003, 257(1-2), 1-6.
 Web of Science® Times Cited: 4

B. Arnaudov, Tanja Paskova, O. Valassiades, Plamen Paskov, S. Evtimova, Bo Monemar and M. Heuken
  Magnetic-field-induced localization of electrons in InGaN/GaN multiple quantum wells
  Applied Physics Letters, 2003, 83(13), 2590-2592.
 Web of Science® Times Cited: 1

V. Darakchieva, Plamen Paskov, Mattias Schubert, Tanja Paskova, Hans Arwin, Bo Monemar, H. Amano and I. Akasaki
  Strain evolution and phonons in AlN/GaN superlattices
  , 2003, , .

Bo Monemar, Plamen Paskov, Hamid Harati Zadeh, Per-Olof Holtz, Peder Bergman, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Photoluminescence of n-doped InGaN/GaN and AlGaN/GaN Multiple Quantum Well structures, role of depletion fields and polarization fields
  Physica status solidi. A, Applied research, 2003, 195, 523.
 Web of Science® Times Cited: 5

Bo Monemar, Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Peder Bergman, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum well structures
  Physica status solidi. B, Basic research, 2003, 237(1), 353-364.
 Web of Science® Times Cited: 21

Bo Monemar, Plamen Paskov, Galia Pozina, JP Bergman, S Kamiyama, M Iwaya, H Amano and I Akasaki
  Influence of depletion fields on photoluminescence of n-doped InGaN/GaN multiple quantum well structures
  Physica status solidi. A, Applied research, 2002, 192(1), 21-26.
 Web of Science® Times Cited: 4

Bo Monemar, Plamen Paskov, JP Bergman, Galia Pozina, Vanya Darakchieva, M Iwaya, S Kamiyama, H Amano and I Akasaki
  Photoluminescence in n-doped In0.1Ga0.9N/In0.01Ga0.99N multiple quantum wells
  MRS Internet journal of nitride semiconductor research, 2002, 7(7), 1.
 Web of Science® Times Cited: 8

Bo Monemar, Plamen Paskov, JP Bergman, Galia Pozina, Tanja Paskova, S Kamiyama, M Iwaya, H Amano and I Akasaki
  Photoluminescence of excitons in InxGa1-xN/InyGa1-yN multiple quantum wells
  Physica status solidi. A, Applied research, 2002, 190(1), 161-166.
 Web of Science® Times Cited: 2

Vanya Darakchieva, Jens Birch, Plamen Paskov, Sukkaneste Tungasmita, Tanja Paskova and Bo Monemar
  Strain evolution in high temperature AlN buffer layers for HVPE-GaN growth
  Physica status solidi. A, Applied research, 2002, 190(1), 59-64.
 Web of Science® Times Cited: 3

Vanya Darakchieva, Plamen Paskov, Tanja Paskova, Jens Birch, Sukkaneste Tungasmita and Bo Monemar
  Deformation potentials of the E-1(TO) mode in AlN
  Applied Physics Letters, 2002, 80(13), 2302-2304.
 Web of Science® Times Cited: 18

Plamen Paskov, Vanya Darakchieva, Tanja Paskova, Per-Olof Holtz and Bo Monemar
  Anisotropy of the in-plane strain in GaN grown on A-plane sapphire
  Physica status solidi. B, Basic research, 2002, 234(3), 892-896.
 Web of Science® Times Cited: 3

Plamen Paskov, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Phonon-assisted photoluminescence in InGaN/GaN multiple quantum wells
  Physica status solidi. B, Basic research, 2002, 234(3), 755-758.
 Web of Science® Times Cited: 13

Plamen Paskov, Tanja Paskova, Per-Olof Holtz and Bo Monemar
  Anisotropy of the free exciton emission in GaN grown on a-plane sapphire
  Physica status solidi. A, Applied research, 2002, 190(1), 75-79.
 Web of Science® Times Cited: 18

Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Effect of n-type modulation doping on the photoluminescence of GaN/Al0.07Ga0.93N multiple quantum wells
  Applied Physics Letters, 2002, 80(8), 1373.
 Web of Science® Times Cited: 15

Tanja Paskova, Plamen Paskov, Vanya Darakchieva, Sukkaneste Tungasmita, Jens Birch and Bo Monemar
  Defect reduction in HVPE growth of GaN and related optical spectra
  Physica status solidi. A, Applied research, 2001, 183(1), 197-203.
 Web of Science® Times Cited: 9

Plamen Paskov, Per-Olof Holtz, Bo Monemar, JM Garcia, WV Schoenfeld and PM Petroff
  Excited-state magnetoluminescence of InAs/GaAs self-assembled quantum dots
  Japanese Journal of Applied Physics, 2001, 40(3B), 1998-2001.

Plamen Paskov, Tanja Paskova, Per-Olof Holtz and Bo Monemar
  Spin-exchange splitting of excitons in GaN
  Physical Review B. Condensed Matter and Materials Physics, 2001, 64(11), .
 Web of Science® Times Cited: 28

Bo Monemar, Plamen Paskov, Galia Pozina, Tanja Paskova, JP Bergman, M Iwaya, S Nitta, H Amano and I Akasaki
  Optical characterization of InGaN/GaN MQW structures without in phase separation
  Physica status solidi. B, Basic research, 2001, 228(1), 157-160.
 Web of Science® Times Cited: 5

Tanja Paskova, Plamen Paskov, EM Goldys, Vanya Darakchieva, U Sodervall, M Godlewski, M Zielinski, E Valcheva, CF Carlstrom and Qamar Ul Wahab
  Mass transport growth and properties of hydride vapour phase epitaxy GaN
  Physica status solidi. A, Applied research, 2001, 188(1), 447-451.
 Web of Science® Times Cited: 2

E. Valcheva, Tanja Paskova, M.V. Abrashev, Per Persson, Plamen Paskov, E.M. Goldys, R. Beccard, M. Heuken and Bo Monemar
  Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN
  Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, 2001, 82(1-3), 35-38.
 Web of Science® Times Cited: 5

Tanja Paskova, E.M. Goldys, Plamen Paskov, Qamar Ul Wahab, Lars Wilzén, Michel P de Jong and Bo Monemar
  Mass transport growth and optical emission properties of hydride vapor phase epitaxy GaN
  Applied Physics Letters, 2001, 78(26), 4130-4132.
 Web of Science® Times Cited: 6

Tanja Paskova, E. Valcheva, Jens Birch, Sukkaneste Tungasmita, Per Persson, Plamen Paskov, S. Evtimova, M. Abrashev and Bo Monemar
  Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer
  Journal of Crystal Growth, 2001, 230(3-4), 381-386.
 Web of Science® Times Cited: 18

E. Valcheva, Tanja Paskova, M.V. Abrashev, Plamen Paskov, Per Persson, E.M. Goldys, R. Beccard, M. Heuken and Bo Monemar
  Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates
  Journal of Applied Physics, 2001, 90(12), 6011-6016.
 Web of Science® Times Cited: 13

Bo Monemar, Weimin Chen, Plamen Paskov, Tanja Paskova, Galia Pozina and Peder Bergman
  The 3.466 eV Bound Exciton in GaN
  Physica status solidi. B, Basic research, 2001, 228(2), 489-492.
 Web of Science® Times Cited: 7

Plamen Paskov, Per-Olof Holtz, Bo Monemar, J.M. Garcia, W.V. Schoenfeld and P.M. Petroff
  Optical up-conversion processes in InAs quantum dots
  Japanese Journal of Applied Physics, 2001, 40(3 B), 2080-2083.
 Web of Science® Times Cited: 6

Plamen Paskov, Tanja Paskova, Per-Olof Holtz and Bo Monemar
  Internal structure of free excitons in GaN
  Physica status solidi. B, Basic research, 2001, 228(2), 467-470.
 Web of Science® Times Cited: 3

Plamen Paskov, Per-Olof Holtz, S. Wongmanerod, Bo Monemar, J.M. Garcia, W.V. Schoenfeld and P.M. Petroff
  Auger processes in InAs self-assembled quantum dots
  Physica. E, Low-Dimensional systems and nanostructures, 2000, 6(1), 440-443.
 Web of Science® Times Cited: 7

Plamen Paskov, Per-Olof Holtz, Bo Monemar, J.M. Garcia, W.V. Schoenfeld and P.M. Petroff
  Magnetoluminescence of highly excited InAs/GaAs self-assembled quantum dots
  Physical Review B. Condensed Matter and Materials Physics, 2000, 62(11), 7344-7349.
 Web of Science® Times Cited: 26

S. Wongmanerod, Plamen Paskov, Per-Olof Holtz, Bo Monemar, O. Mauritz, K. Reginski and M. Bugajski
  Magneto-optical studies of highly p-type modulation-doped GaAs/AlxGa1-xAs quantum wells
  Physical review. B, Condensed matter and materials physics, 2000, 62, 15952.
 Web of Science® Times Cited: 2

Plamen Paskov, Per-Olof Holtz, Bo Monemar, W. Schoenfeld, J.M. Garcia and P.M. Petroff
  Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots
  Applied Physics Letters, 2000, 77(6), 812-814.
 Web of Science® Times Cited: 60

Chapters in Books

Bo Monemar and Plamen Paskov
  Luminescence Studies of Impurities and Defects in III-Nitride Semiconductors
  Handbook of Luminescent Semiconductor Materials, CRC Press, 2010, 169-190.


Plamen Paskov and Bo Monemar
  Luminescence of GaN layers grown in nonpolar directions
  Nitrides with nonpolar surfaces: growth, properties, and devices, Wiley, 2008, 185-217.


Conference Articles

Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, David Lindgren, Lars Samuelson, Xianfeng Ni, Hadis Morkoç, Tanya Paskova, Zhaoxia Bi and Jonas Ohlsson
  Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates
  Gallium Nitride Materials and Devices VI, 2011.


 Web of Science® Times Cited: 1  Fulltext PDF

Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, H. Amano, I. Akasaki, S. Figge, D. Hommel, Tanja Paskova and A. Usiui
  Mg related acceptors in GaN
  Phys. Status Solidi C 7, 2010.


 Web of Science® Times Cited: 4  Fulltext PDF

Andreas Gällström, Björn Magnusson, A. Thuaire, Anne Henry, Plamen Paskov and Erik Janzén
  The Electronic Structure of the UD-4 defect in 4H, 6H and 15R SiC
  Materials Science Forum, Vols. 600-603, 2009.


 Web of Science® Times Cited: 1

Plamen Paskov, Bo Monemar, Tanja Paskova, E.A. Preble, A.D. Hanser and K.R. Evans
  Optical characterization of bulk GaN substrates with c-, a-, and m-plane surfaces
  IWN 2008, 2008.


 Web of Science® Times Cited: 2

Bo Monemar, Galia Pozina, Plamen Paskov, Carl Hemmingsson, Peder Bergman, T. Kawashima, H. Amano, I. Akasaki and A. Usui
  Acceptors in Mg doped GaN, optical properties and metastability
  IWN 2008,2008, 2008.


Y. Honda, T. Hikosaka, M. Yamaguchi, N. Sawaki, Galia Pozina, Fredrik Karlsson, Vanya Darakchieva, Plamen Paskov and Bo Monemar
  DAP emission band in a carbon doped (1-101)GaN grown ob (001) Si substrate
  Phys. Stat. Sol. (c) Vol. 6, 2008.


 Web of Science® Times Cited: 3

Bo Monemar, Plamen Paskov, Galia Pozina, Peder Bergman, Carl Hemmingsson, A.A. Toropov, Tatiana Choubina, T. Kawashima, H. Amano, I. Akasaki, A. Usui and Tanja Paskova
  Properties of dopants and defects in GaN from bound exciton spectra
  Meijo International Symposium on Nitride Semiconductors 2008,2008, 2008.


Bo Monemar, Plamen Paskov, Galia Pozina, Peder Bergman, Carl Hemmingsson, T. Kawashima, H. Amano, I. Akasaki and A. Usui
  Optical properties and acceptor states in Mg doped GaN
  8^th Akasaki Symposium,2008, 2008.


Plamen Paskov, Bo Monemar, D. Iida, T. Kawashima, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
  Nonpolar GaN layers grown by sidewall epitaxial lateral overgrowth: optical evidences for a reduced stacking fault density
  Proc. of the 7th International Conference on Nitride Semiconductors,2007, 2008.


Plamen Paskov, Bo Monemar, Tanja Paskova, S. Kamiyama, H. Amano and I. Akasaki
  Photoluminescence study of near-surface GaN/AlN superlattices
  International Symposium on Integrated Optoelectronic Devices Photonics West 2008,2008, 2008.


Tanja Paskova, A.D. Hanser, E. Preble, K. Evans, R. Kroeger, F. Toumisto, R. Kersting, R. Alcorn, S. Ashley, C. Pagel, E. Valcheva, Plamen Paskov and Bo Monemar
  Defect and emission distributions in bulk GaN grown in polar and nonpolar directions: a comparative analysis
  International Symposium on Integrated Optoelectronic Devices Photonics West 2008,2008, 2008.


C-W. Hsu, A. Ganguly, C-P. Chen, Plamen Paskov, Per-Olof Holtz, K-H. Chen and L-C. Chen
  Luminescent Behaviors of GaN Nanowires with Different Surface Conditions: Toward Optical DNA Sensing
  International Conference on One-Dimensional Nanostructures ICON,2007, 2007.


Galia Pozina, Bo Monemar, Plamen Paskov, Carl Hemmingsson, Lars Hultman, H. Amano, I. Akasaki, Tanja Paskova, S. Figge, D. Hommel and A. Usui
  Metastability of the UV luminescence in Mg-doped GaN layers grown by MOVPE on quasi-bulk GaN templates
  , 2007.


 Web of Science® Times Cited: 5

Tanja Paskova, L. Becker, T. Böttcher, D. Hommel, Plamen Paskov and Bo Monemar
  Bending in HVPE grown GaN films: origin and reduction possibilities
  Proc. of the International Workshop on Nitride Semiconductors IWN2006,2006, 2007.


 Web of Science® Times Cited: 1

Tanja Paskova, Plamen Paskov, Vanya Darakchieva, R. Kröger, D. Hommel, Bo Monemar, E. Preble, A. Hanser, N.M. Williams and M. Tudor
  Strain-free low-defect-density bulk GaN with nonpolar orientation
  Proc. of the MRS Fall Meeting,2006, 2007.


Plamen Paskov, Bo Monemar, A. Toropov, Peder Bergman and A. Usui
  Two-electron transition spectroscopy of shallow donors in bulk GaN
  Proc. of the International Workshop on Nitride Semiconductors IWN2006,2006, 2007.


 Web of Science® Times Cited: 12

Tanja Paskova, R. Kroeger, D. Hommel, Plamen Paskov, Bo Monemar, E. Preble, A. Hanser, N.M. Williams and M. Tutor
  Nonpolar a- and m-plane bulk GaN sliced from boules: structural and optical characteristics
  Proc. of the International Workshop on Nitride Semiconductors IWN2006,2006, 2007.


 Web of Science® Times Cited: 12

Plamen Paskov, Bo Monemar, S. Kamiyama, H. Amano and I. Akasaki
  Optical properties of undoped, n-doped and p-doped GaN/AlN superlattices
  Proc. of the MRS Fall Meeting,2006, 2007.


D.D. Ree, K.S. Zhuravlev, V.G. Mansurov, A.Yu. Nikitin, Plamen Paskov and Per-Olof Holtz
  Microphotoluminescence study of single and multilayered structure with GaN/AlN quantum dots
  ICPS 28th International Conference on the Physics of Semiconductors,2006, 2006.


Hamid Harati Zadeh, Bo Monemar, Plamen Paskov, Per-Olof Holtz, Peder Bergman, H. Amano and I. Akasaki
  Optical Studies of Wide Band Gap III-Nitride Semiconductor Quantum Wells and Superlattices
  European Materials Research Society E-MRS fall meeting 2006,2006, 2006.


T. Paskova, R. Kroeger, Plamen Paskov, S. Figge, D. Hommel, Bo Monemar, B.A. Haskell, P. Fini, J.S. Speck and S. Nakamura
  Microscopic emission properties of nonpolar a-plane GaN grown by HVPE
  International Symposium on Integrated Optoelectronic Devices Photonics West 2006,2006, 2006.


Hans Arwin, Vanya Darakchieva, Tanja Paskova, Plamen Paskov, Bo Monemar, Mattias Schubert, S Figge, D Hommel, B A Haskell, P T Fini and S Nakamura
  Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a-plane GaN
  ICSN-6,2005, 2005.


Tanja Paskova, T. Suski, M. Bockowski, Plamen Paskov, Vanya Darakchieva, Bo Monemar, F. Tuomisto, K. Saarinen, N. Ashkenov, M. Schubert, C. Röder and D. Hommel
  High pressure annealing of HVPE GaN free-standing films: redistribution of defects and stress
  MRS Fall Meeting,2004, 2005.


Bo Monemar, Plamen Paskov, F. Tuomisto, K. Saarinen, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
  Oxygen related shallow acceptor in GaN
  MRS Fall Meeting,2004, 2005.


Plamen Paskov, Tanja Paskova, Per-Olof Holtz and Bo Monemar
  Polarisation dependent spectroscopy of the near bandgap emission in free-standing GaN
  2003 MRS Fall Meeting,2003, 2004.


Bo Monemar, Plamen Paskov, H. Haratizadeh, Galia Pozina, Peder Bergman, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures
  Proceedings of SPIE, the International Society for Optical Engineering, 2003.


Tanja Paskova, Vanya Darakchieva, E. Valcheva, Plamen Paskov, Bo Monemar and M. Heuken
  Growth of GaN on a-plane sapphire: In-plane epitaxial relationships and lattice parameters
  Physica status solidi. B, Basic research, 2003.


 Web of Science® Times Cited: 6

Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Photoluminescence study of Si doped GaN/AlGaN multi quantum wells
  ICPS 2002,2002, 2003.


Bo Monemar, Plamen Paskov, Tanja Paskova, Peder Bergman, Galia Pozina, Weimin Chen, P.N. Hai, Irina A. Buyanova, H. Amano and I. Akasaki
  Optical characterization of III-nitrides
  , 2002.


 Web of Science® Times Cited: 20

Tanja Paskova, Vanya Darakchieva, Plamen Paskov, U. Sodervall and Bo Monemar
  Growth and separation related properties of HVPE-GaN free-standing films
  Journal of Crystal Growth, 2002.


 Web of Science® Times Cited: 25

Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Photoluminescence study of Si doped GaN/GaN/Al0.07Ga0.93N multi quantum wells
  NANO-7/ECOSS-21,2002, 2002.


Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  The influence of Si-donor doping on the exciton localization in modulation- doped GaN/AlGaN multi quantum wells
  14th Indium Phosphide and Related Materials Conference IPRM 2002,2002, 2002.


Plamen Paskov, Per-Olof Holtz, Bo Monemar, J.M. Garcia, W.V. Schoenfeld and P.M. Petroff
  Optical up-conversion processes in InAs quantum dots
  the 25th International Conference on the Physics of Semiconductors ICPS-25,2000, 2000.