Publications for Philip Hens
Co-author map based on ISI articles 2007-

Keywords

vapor temperature substrates sublimation silicon sic quality off-axis nitrogen luminescence freestanding fluorescent fast epitaxy defect cubic carbide 6h-sic 3c-sic (001)

Journal Articles

Saskia Schimmel, Michl Kaiser, Valdas Jokubavicius, Yiyu Ou, Philip Hens, Margareta K. Linnarsson, Jianwu Sun, Rickard Liljedahl, Haiyan Ou, Mikael Syväjärvi and Peter Wellmann
  The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy
  IOP Conference Series: Materials Science and Engineering, 2014, 56(1), 012002.
   Fulltext  PDF  

Philip Hens, Alexei A. Zakharov, Tihomir Iakimov, Mikael Syväjärvi and Rositsa Yakimova
  Large area buffer-free graphene on non-polar (001) cubic silicon carbide
  Carbon, 2014, 80, 823-829.

Valdas Jokubavicius, Michl Kaiser, Philip Hens, Peter Wellmann, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
  Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates
  Materials Science Forum, 2013, 740-742, 19-22.

Philip Hens, Valdas Jokubavicius, Rickard Liljedahl, G Wagner, Rositsa Yakimova, P Wellmann and Mikael Syväjärvi
  Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds
  Materials letters (General ed.), 2012, 67(1), 300-302.
   Fulltext  PDF  
 Web of Science® Times Cited: 5

Yiyu Ou, Valdas Jokubavicius, Philip Hens, Michl Kaiser, Peter Wellmann, Rositsa Yakimova, Mikael Syväjärvi and Haiyan Ou
  Broadband and omnidirectional light harvesting enhancement of fluorescent SiC
  Optics Express, 2012, 20(7), 7575-7579.
 Web of Science® Times Cited: 8

Mikael Syväjärvi, J. Müller, Jianwu Sun, Vytautas Grivickas, Yiyu Ou, Valdas Jokubavicius, Philip Hens, M. Kaisr, Kanaparin Ariyawong, K. Gulbinas, Rickard Liljedahl, M. K. Linnarsson, S. Kamiyama, P. Wellmann, E. Spiecker and H. Ou
  Fluorescent SiC as a new material for white LEDs
  Physica scripta. T, 2012, T148, 014002.
 Web of Science® Times Cited: 14

Conference Articles

Saskia Schimmel, Michl Kaiser, Philip Hens, Valdas Jokubavicius, Rickard Liljedahl, Jianwu Sun, Rositsa Yakimova, Yi Yu Ou, Hai Yan Ou, Margareta K. Linnarsson, Peter Wellmann and Mikael Syväjärvi
  Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates
  Silicon Carbide and Related Materials 2012, 2013.


 Web of Science® Times Cited: 1

Philip Hens, Julian Müller, Günter Wagner, Rickard Liljedahl, Erdman Spiecker and Mikael Syväjärvi
  Defect generation and annihilation in 3C-SiC-(001) homoepitaxial growth by sublimation
  Silicon Carbide and Related Materials 2012, 2013.


Valdas Jokubavicius, Michl Kaiser, Philip Hens, Peter Wellmann, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
  Morphological and optical stability in growth of fluorescent SiCon low off-axis substrates
  9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia, 2013.


Thomas Hupfer, Philip Hens, Michl Kaiser, Valdas Jokubavicius, Mikael Syväjärvi and Peter Wellmann
  Modeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation Epitaxy
  9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia, 2013.


Philip Hens, J. Müller, G. Wagner, Rickard Liljedahl, Rositsa Yakimova, E. Spiecker, P. Wellmann and Mikael Syväjärvi
  Freestanding 3C-SiC grown by sublimation epitaxy using 3C-SiC templates on silicon
  Materials Science Forum Vols 717 - 720, 2012.


Philip Hens, Julian Müller, Erdmann Spiecker and Peter Wellmann
  Defect structures at the silicon/3C-SiC interface
  Materials Science Forum Vols 717 - 720, 2012.


Valdas Jokubavicius, Björn Lundqvist, Philip Hens, Rickard Liljedahl, Rositza Yakimova, Satoshi Kamiyama and Mikael Syväjärvi
  On stabilization of 3C-SiC using low off-axis 6H-SiC substrates
  ICSCRM2011, 2012.


 Web of Science® Times Cited: 2

Philip Hens, Mikael Syväjärvi, F. Oehlschläger, P. Wellman and Rositsa Yakimova
  P- and n-type doping in SiC sublimation epitaxy using highly doped substrates
  ECSCRM2008,2008, 2009.


 Web of Science® Times Cited: 1