Publications for Per O A Persson
Co-author map based on ISI articles 2007-
Journal Articles
Aurelija Mockuté, Martin Dahlqvist, Jens Emmerlich, Lars Hultman, Jochen M Schneider, Per O A Persson and Johanna Rosén
Synthesis and ab initio calculations of nanolaminated (Cr,Mn)2AlC compounds
Physical Review B. Condensed Matter and Materials Physics, 2013, 87(9), .
Fulltext  |
Aurelija Mockuté, Martin Dahlqvist, Lars Hultman, Per O A Persson and Johanna Rosén
Oxygen incorporation in Ti2AlC thin films studied by electron energy loss spectroscopy and ab initio calculations
Journal of Materials Science, 2013, 48(10), 3686-3691.
Web of Science® Times Cited: 1 |
Ching-Lien Hsiao, Justinas Palisaitis, Muhammad Junaid, Per O A Persson, Jens Jensen, Qingxiang Zhao, Lars Hultman, Li-Chyong Chen, Kuei-Hsien Chen and Jens Birch
Room-temperature heteroepitaxy of single-phase Al1-xInxN films with full composition range on isostructural wurtzite templates
Thin Solid Films, 2012, 524, 113-120.
Fulltext |
Anders Lundskog, Justinas Palisaitis, Chih-Wei Hsu, Martin Eriksson, Lars Hultman, Per Persson, Urban Forsberg, Per-Olof Holtz and Erik Janzén
InGaN quantum dot formation mechanism on hexagonal GaN/InGaN/GaN pyramids
Nanotechnology, 2012, 23(30), 305708.
Web of Science® Times Cited: 2 |
Agnė Žukauskaitė, Christopher Tholander, Justinas Pališaitis, Per O. Å. Persson, Vanya Darakchieva, Nebiha Ben Sedrine, Ferenc Tasnádi, Björn Alling, Jens Birch and Lars Hultman
YxAl1-xN Thin Films
Journal of Physics D, 2012, 45(42), 422001.
Fulltext Web of Science® Times Cited: 2 |
Agnė Žukauskaitė, Gunilla Wingqvist, Justinas Pališaitis, Jens Jensen, Per O. Å. Persson, Ramin Matloub, Paul Muralt, Yunseok Kim, Jens Birch and Lars Hultman
Microstructure and Dielectric Properties of Piezoelectric Magnetron Sputtered w-ScxAl1-xN thin films
Journal of Applied Physics, 2012, 111(9), 093527.
Fulltext Web of Science® Times Cited: 3 |
Ching-Lien Hsiao, Justinas Palisaitis, Junaid Muhammad, Ruei-San Chen, Per Persson, Per Sandström, Per-Olof Holtz, Lars Hultman and Jens Birch
Spontaneous Formation of AlInN Core–Shell Nanorod Arrays by Ultrahigh-Vacuum Magnetron Sputter Epitaxy
Applied Physics Express, 2011, 4(115002), .
Fulltext |
Mihails Cubarovs, Henrik Pedersen, Hans Högberg, Vanya Darakchieva, Jensen Jens, Per Persson and Anne Henry
CVD growth of sp2-hybridized boron nitride using aluminum nitride as buffer layer
Physica Status Solidi. Rapid Research Letters, 2011, 5(10-11), 397-399.
Fulltext Web of Science® Times Cited: 3 |
Justinas Palisaitis, Ching-Lien Hsiao, Muhammad Junaid, Jens Birch, Lars Hultman and Per O.Å. Persson
Effect of strain on low-loss electron energy loss spectra of group III-nitrides
Physical Review B. Condensed Matter and Materials Physics, 2011, 84(24), 245301.
Fulltext |
Mark D Tucker, Per Persson, Mathew C Guenette, Johanna Rosén, Marcela M M Bilek and David R McKenzie
Substrate orientation effects on the nucleation and growth of the M(n+1)AX(n) phase Ti2AlC
JOURNAL OF APPLIED PHYSICS, 2011, 109(1), 014903.
Fulltext Web of Science® Times Cited: 5 |
Justinas Palisaitis, Ching-Lien Hsiao, Muhammad Junaid, Mengyao Xie, Vanya Darakchieva, Jean-Francois Carlin, Nicolas Grandjean, Jens Birch, Lars Hultman and Per O.Å. Persson
Standard-free composition measurements of Alx In1–xN by low-loss electron energy loss spectroscopy
physica status solidi (RRL) – Rapid Research Letters, 2011, 5(2), 50-52.
Fulltext Web of Science® Times Cited: 4 |
Muhammad Junaid, Ching-Lien Hsiao, Justinas Palisaitis, Jens Jensen, Per Persson, Lars Hultman and Jens Birch
Electronic-grade GaN(0001)/Al2O3(0001) grown by reactive DC-magnetron sputter epitaxy using a liquid Ga target
Applied Physics Letters, 2011, 98(14), 141915.
Fulltext Web of Science® Times Cited: 4 |
Ali Khatibi, Justinas Palisaitis, Carina Höglund, Anders Eriksson, Per O. Å. Persson, Jens Jensen, Jens Birch, Per Eklund and Lars Hultman
Face-Centered Cubic (Al1-xCrx)2O3
Thin Solid Films, 2011, 519(8), 2426-2429.
Fulltext Web of Science® Times Cited: 7 |
Niklas Gunnarsson Sarius, P. Leisner, Per O A Persson, J. Hald and Lars Hultman
Influence of ultrasound and cathode rotation on the formation of intrinsic stress in Ni films during electrodeposition
Transactions of the Institute of Metal Finishing, 2011, 89(3), 137-142.
Web of Science® Times Cited: 2 |
P. O. Å. Persson, Carina Höglund, Jens Birch and Lars Hultman
Ti2Al(O,N) formation by solid state reaction between substoichiometric TiN thin films and Al2O3(0001) substrates
Thin Solid Films, 2011, 519(8), 2421-2425.
Fulltext Web of Science® Times Cited: 4 |
Junaid Muhammad, Daniel Lundin, Justinas Palisaitis, Ching-Lien Hsiao, Vanya Darakchieva, Jens Jensen, Per Persson, Per Sandström, W-J Lai, L-C Chen, K-H Chen, Ulf Helmersson, Lars Hultman and Jens Birch
Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al2O3 (0001) by high power impulse magnetron sputtering
Journal of Applied Physics, 2011, 110(12), 123519.
Fulltext Web of Science® Times Cited: 4 |
Gintautas Abrasonis, Thomas Oates, Gyoergy J Kovacs, Joerg Grenzer, Per Persson, Karl-Heinz H Heinig, Andrius Martinavicius, Nicole Jeutter, Carsten Baehtz, Mark Tucker, Marcela M M Bilek and Wolfhard Moeller
Nanoscale precipitation patterns in carbon-nickel nanocomposite thin films: Period and tilt control via ion energy and deposition angle
JOURNAL OF APPLIED PHYSICS, 2010, 108(4), 043503.
Fulltext Web of Science® Times Cited: 4 |
Carina Höglund, Jens Birch, Björn Alling, Javier Bareño, Zsolt Czigány, Per O. Å. Persson, Gunilla Wingqvist, Agne Zukauskaite and Lars Hultman
Wurtzite-structure Sc1-xAlxN solid solution films grown by reactive magnetron sputter epitaxy: structural characterization and first-principles calculations
Journal of Applied Physics, 2010, 107(12), 123515.
Fulltext Web of Science® Times Cited: 14 |
Carina Höglund, Björn Alling, Jens Birch, Manfred Beckers, Per O. Å. Persson, Carsten Baehtz, Zsolt Czigány, Jens Jensen and Lars Hultman
Effects of volume mismatch and electronic structure on the decomposition of ScAlN and TiAlN solid solutions
Physical Review B. Condensed Matter and Materials Physics, 2010, 81(22), 224101.
Fulltext Web of Science® Times Cited: 4 |
Jenny Frodelius, Per Eklund, Manfred Beckers, Per Persson, Hans Högberg and Lars Hultman
Sputter deposition from a Ti2AlC target: Process characterization and conditions for growth of Ti2AlC
Thin Solid Films, 2010, 518(6), 1621-1626.
Fulltext Web of Science® Times Cited: 15 |
Vanya Darakchieva, N P Barradas, Mengyao Xie, K Lorenz, E Alves, M Schubert, Per Persson, Finn Giuliani, F Munnik, Ching-Lien Hsiao, L W Tu and W J Schaff
Role of impurities and dislocations for the unintentional n-type conductivity in InN
PHYSICA B-CONDENSED MATTER, 2009, 404(22), 4476-4481.
Web of Science® Times Cited: 8 |
Per Persson, Johanna Rosén, D R McKenzie and M M M Bilek
Formation of the MAX-phase oxycarbide Ti2AlC1-xOx studied via electron energy-loss spectroscopy and first-principles calculations
PHYSICAL REVIEW B, 2009, 80(9), 092102.
Web of Science® Times Cited: 11 |
Muhammed Qadir Israr, Jamil Rana Sadaf, Li-Li Yang, Omer Nour, Magnus Willander, Justinas Palisaitis and Per Persson
Trimming of aqueous chemically grown ZnO nanorods into ZnO nanotubes and their comparative optical properties
APPLIED PHYSICS LETTERS, 2009, 95(7), 073114.
Web of Science® Times Cited: 20 |
Axel Flink, R M Saoubi, Finn Giuliani, J Sjolen, T Larsson, Per Persson, M P Johansson and Lars Hultman
Microstructural characterization of the tool-chip interface enabled by focused ion beam and analytical electron microscopy
WEAR, 2009, 266(11-12), 1237-1240.
Fulltext Web of Science® Times Cited: 1 |
Manfred Beckers, Carina Höglund, Carsten Baehtz, R.M.S. Martins, Per O. Å. Persson, Lars Hultman and W. Möller
The influence of substrate temperature and Al mobility on the microstructural evolution of magnetron sputtered ternary Ti-Al-N thin films
Journal of Applied Physics, 2009, 106(6), 064915.
Web of Science® Times Cited: 4 |
Vanya Darakchieva, T Hofmann, M Schubert, Bo Sernelius, Bo Monemar, Per Persson, Finn Giuliani, E Alves, H Lu and W J Schaff
Free electron behavior in InN: On the role of dislocations and surface electron accumulation
Applied Physics Letters, 2009, 94(2), 022109.
Fulltext Web of Science® Times Cited: 19 |
Gholamreza Yazdi, Per Persson, D Gogova, Lars Hultman, Mikael Syväjärvi and Rositsa Yakimova
Aligned AlN nanowires by self-organized vapor-solid growth
NANOTECHNOLOGY, 2009, 20(49), 495304.
Web of Science® Times Cited: 11 |
Axel Knutsson, M.P. Johansson, Per Persson, Lars Hultman and Magnus Odén
Thermal decomposition products in arc evaporated TiAlN/TiN multilayers
Applied Physics Letters, 2008, 93(14), 143110.
|
E. Lewin, Per Persson, Martina Lattemann, M. Stüber, M. Gorgoi, A. Sandell, C. Ziebert, F. Schäfers, W. Braun, J. Halbritter, S. Ulrich, W. Eberhardt, Lars Hultman, H. Siegbahn, S. Svensson and U. Jansson
On the origin of a third spectral component of C1s XPS-spectra for nc-TiC/a-C nanocomposite thin films
Surface & Coatings Technology, 2008, 202(15), 3563-3570.
Web of Science® Times Cited: 30 |
Naureen Ghafoor, Fredrik Eriksson, Per O.Å Persson, Lars Hultman and Jens Birch
Effects of ion-assisted growth on the layer definition in Cr/Sc multilayers
Thin Solid Films, 2008, 516(6), 982-990.
Fulltext Web of Science® Times Cited: 6 |
Per Persson, S. Kodambaka, I. Petrov and Lars Hultman
Epitaxial Ti2AlN(0 0 0 1) thin film deposition by dual-target reactive magnetron sputtering
Acta Materialia, 2007, 55(13), 4401-4407.
Web of Science® Times Cited: 25 |
E. Valcheva, S. Dimitrov, Bo Monemar, H. Haratizadeh, Per Persson, H. Amano and I. Akasaki
Influence of well-width fluctuations on the electronic structure of GaN/AlxGa1-xN multiquantum wells with graded interfaces
Acta Physica Polonica. A, 2007, 112(2), 395-400.
Web of Science® Times Cited: 1 |
Hans Söderberg, Axel Flink, Jens Birch, Per Persson, Manfred Beckers, Lars Hultman and Magnus Odén
Growth and characterization of TiN/SiN(001) superlattice films
Journal of Materials Research, 2007, 22(11), 3255-3264.
Web of Science® Times Cited: 16 |
Jones Alami, Per Eklund, Jon M. Andersson, Martina Lattemann, Erik Wallin, Johan Böhlmark, Per Persson and Ulf Helmersson
Phase tailoring of Ta thin films by highly ionized pulsed magnetron sputtering
Thin Solid Films, 2007, 515(7-8), 3434-3438.
Fulltext Web of Science® Times Cited: 35 |
Martina Lattemann, A.P. Ehiasarian, Johan Böhlmark, Per .Å.O. Persson and Ulf Helmersson
Investigation of high power impulse magnetron sputtering pretreated interfaces for adhesion enhancement of hard coatings on steel
Surface & Coatings Technology, 2006, 200(22-23), 6495-6499.
Fulltext Web of Science® Times Cited: 33 |
O. Wilhelmsson, J.-P. Palmquist, E. Lewin, Jens Emmerlich, Per Eklund, Per Persson, Hans Högberg, S. Li, R. Ahuja, O. Eriksson, Lars Hultman and U. Jansson
Deposition and characterization of ternary thin films within the Ti-Al-C system by DC magnetron sputtering
Journal of Crystal Growth, 2006, 291(1), 290-300.
Web of Science® Times Cited: 69 |
Per Persson, Lars Hultman, M.S. Janson and A. Hallen
Ostwald ripening of interstitial-type dislocation loops in 4H-silicon carbide
Journal of Applied Physics, 2006, 100(5), .
Web of Science® Times Cited: 6 |
E Valcheva, Jens Birch, Per Persson, S Tungasmita and Lars Hultman
Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering
Journal of Applied Physics, 2006, 100(12), .
Web of Science® Times Cited: 5 |
Anelia Kakanakova-Georgieva, Per Persson, A. Kasic, Lars Hultman and Erik Janzén
Superior material properties of AlN on vicinal 4H-SiC
Journal of Applied Physics, 2006, 100(3), .
Web of Science® Times Cited: 2 |
Herbert Willmann, P. H. Mayrhofer, Per Persson, A. E. Reiter, Lars Hultman and C. Mitterer
Thermal stability of Al-Cr-N hard coatings
Scripta Materialia, 2006, 54(11), 1847-1851.
Web of Science® Times Cited: 78 |
Martina Lattemann, K. Sell, J. Ye, Per Persson and S. Ulrich
Stress reduction in nanocomposite coatings consisting of hexagonal and cubic boron nitride
Surface & Coatings Technology, 2006, 200( 22-23 SPEC. ISS.), 6459-6464.
Web of Science® Times Cited: 10 |
Naureen Ghafoor, Per O. Å. Persson, Fredrik Eriksson, Franz Schäfers and Jens Birch
Interface engineered ultra-short period Cr/Ti multilayers as high reflectance mirrors and polarizers for soft X-rays of lambda=2.74 nm wavelength
Applied Optics, 2006, 45(1), 137-143.
Web of Science® Times Cited: 2 |
S. Prasalovich, V. Popok, Per Persson and E.E.B. Campbell
Experimental studies of complex crater formation under cluster implantation of solids
European Physical Journal D, 2005, 36(1), 79-88.
Web of Science® Times Cited: 12 |
Tanja Paskova, Vanya Darakchieva, Plamen Paskov, Jens Birch, E Valcheva, Per Persson, B Arnaudov, S Tungasmitta and Bo Monemar
Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers
Journal of Crystal Growth, 2005, 281(1), 55-61.
Web of Science® Times Cited: 42 |
Timo Seppänen, Per Persson, Lars Hultman, Jens Birch and G.Z. Radnoczi
Magnetron sputter epitaxy of wurtzite Al1-x Inx N (0.1
Journal of Applied Physics, 2005, 97(8), 083503.
Web of Science® Times Cited: 23 |
Tanja Paskova, Vanya Darakchieva, Plamen Paskov, Jens Birch, E. Valcheva, Per Persson, B. Arnaudov, S. Tungasmita and Bo Monemar
Nonpolar a-plane HVPE GaN: growth and in-plane anisotropic properties
Physica Status Solidi. C, Current topics in solid state physics, 2005, 2, 2027-2031.
|
Timo Seppänen, Per Persson, Lars Hultman, Jens Birch and G. Z. Radnoczi
Magnetron sputter epitaxy of wurtzite Al1-xInxN (0.1 x 0.9) by Dual Reactive DC Magnetron Sputter Deposition
Journal of Applied Physics, 2005, 97, 83503-1-83503-9.
Web of Science® Times Cited: 23 |
Per Eklund, Jens Emmerlich, Hans Högberg, Ola Wilhelmsson, Peter Isberg, Jens Birch, Per O. Å. Persson, Ulf Jansson and Lars Hultman
Structural, electrical, and mechanical properties of nc-TiC/a-SiC nanocomposite thin films
Journal of Vacuum Science & Technology B, 2005, 23(6), 2486-2495.
Web of Science® Times Cited: 36 |
Jones Alami, Per O. Å. Persson, Denis Music, J. T. Gudmundsson, Johan Böhlmark and Ulf Helmersson
Ion-assisted Physical Vapor Deposition for enhanced film properties on non-flat surfaces
Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, 2005, 23(2), 278-280.
Web of Science® Times Cited: 60 |
J Hallstedt, E Suvar, Per Persson, Lars Hultman, YB Wang and HH Radamson
Growth of high quality epitaxial Si1-x-yGexCy layers by using chemical vapor deposition
Applied Surface Science, 2004, 224(01-Apr), 46-50.
Web of Science® Times Cited: 3 |
J. Hallstedt, M. Blomqvist, Per Persson, Lars Hultman and H. H. Radamson
The effect of carbon and germanium on phase transformation of nickel on Si1-x-yGexCy epitaxial layers
Journal of Applied Physics, 2004, 95(5), 2397-2402.
Web of Science® Times Cited: 8 |
Jens Emmerlich, Hans Högberg, Szilvia Sasvári, Per Persson, Lars Hultman, Jens-Petter Palmquist, Ulf Jansson, Jon M. Molina-Aldareguia and Zsolt Czigány
Growth of Ti3SiC2 thin films by elemental target magnetron sputtering
Journal of Applied Physics, 2004, 96(9), 4817-4826.
Web of Science® Times Cited: 83 |
Jens-Petter Palmquist, Sa Li, Per Persson, Jens Emmerlich, Ola Wilhelmsson, Hans Högberg, M. I. Katsnelson, Börje Johansson, Rajeev Ahuja, Olle Eriksson, Lars Hultman and Ulf Jansson
Mn+1AXn phases in the Ti-Si-C system studied by thin-film synthesis and ab initio calculations
Physical Review B. Condensed Matter and Materials Physics, 2004, 70(16), 165401.
Web of Science® Times Cited: 104 |
Anelia Kakanakova-Georgieva, Per Persson, Rositsa Yakimova, Lars Hultman and Erik Janzén
Sublimation epitaxy of AlN on SiC: Growth morphology and structural features
Journal of Crystal Growth, 2004, 273(1-2), 161-166.
Web of Science® Times Cited: 8 |
J.A.D. Jensen, P. Pocwiardowski, Per Persson, Lars Hultman and P. Moller
Acoustic streaming enhanced electrodeposition of nickel
Chemical Physics Letters, 2003, 368(5-6), 732-737.
Web of Science® Times Cited: 13 |
C. Menon, A.-C. Lindgren, Per Persson, Lars Hultman and H.H. Radamson
Selective epitaxy of Si1-xGex layers for complementary metal oxide semiconductor applications
Journal of the Electrochemical Society, 2003, 150(4), .
Web of Science® Times Cited: 5 |
Per Persson, Lars Hultman, M.S. Janson, A. Hallen and Rositsa Yakimova
Dislocation loop evolution in ion implanted 4H-SiC
Journal of Applied Physics, 2003, 93(11), 9395-9397.
Web of Science® Times Cited: 9 |
J.A.D. Jensen, Per Persson, K. Pantleon, Magnus Odén, Lars Hultman and M.A.J. Somers
Electrochemically deposited nickel membranes, process-microstructure-property relationships
Surface & Coatings Technology, 2003, 172(1), 79-89.
Web of Science® Times Cited: 7 |
Sukkaneste Tungasmita, Per Persson, Timo Seppänen, Lars Hultman and Jens Birch
Growth of epitaxial (SiC)(x)(AlN)(1-x) thin films on 6H-SiC by ion-assisted dual magnetron sputter deposition
Materials Science Forum, 2002, 389-3, 1481-1484.
|
E Valcheva, Tanja Paskova, Per Persson and Bo Monemar
Nanopipes in thick GaN films grown at high growth rate
Physica status solidi. A, Applied research, 2002, 194(2), 532-535.
Web of Science® Times Cited: 3 |
A. Hallen, M.S. Janson, A.Yu. Kuznetsov, D. Aberg, M.K. Linnarsson, B.G. Svensson, Per Persson, Fredrik Carlsson, Liutauras Storasta, Peder Bergman, S.G Sridhara and Y. Zhang
Ion implantation of silicon carbide
Nuclear Instruments and Methods in Physics Reseach B, 2002, 186(1-4), 186-194.
Web of Science® Times Cited: 32 |
E. Valcheva, Tanja Paskova, Per Persson, Lars Hultman and Bo Monemar
Misfit defect formation in thick GaN layers grown on sapphire by hydride vapor phase epitaxy
Applied Physics Letters, 2002, 80(9), 1550.
Web of Science® Times Cited: 9 |
Sukkaneste Tungasmita, Per Persson, Lars Hultman and Jens Birch
Pulsed low-energy ion-assisted growth of epitaxial aluminum nitride layer on 6H-silicon carbide by reactive magnetron sputtering
Journal of Applied Physics, 2002, 91(6), 3551-3555.
Web of Science® Times Cited: 6 |
A.E. Abom, Per Persson, Lars Hultman and Mats Eriksson
Influence of gate metal film growth parameters on the properties of gas sensitive field-effect devices
Thin Solid Films, 2002, 409(2), 233-242.
Web of Science® Times Cited: 13 |
Per Persson, Lars Hultman, H. Jacobson, Peder Bergman, Erik Janzén, J.M. Molina-Aldareguia, W.J. Clegg and T. Tuomi
Structural defects in electrically degraded 4H-SiC p+/n-/n+ diodes
Applied Physics Letters, 2002, 80(25), 4852.
Web of Science® Times Cited: 40 |
J.-P. Palmquist, U. Jansson, Timo Seppänen, Per Persson, Jens Birch, Lars Hultman and P. Isberg
Magnetron sputtered epitaxial single-phase Ti3SiC2 thin films
Applied Physics Letters, 2002, 81(5), 835.
Web of Science® Times Cited: 85 |
Per Persson, Lars Hultman, M.S. Janson, A. Hallen, Rositsa Yakimova, D. Panknin and W. Skorupa
On the nature of ion implantation induced dislocation loops in 4H-silicon carbide
Journal of Applied Physics, 2002, 92(5), 2501.
Web of Science® Times Cited: 19 |
E. Valcheva, Tanja Paskova, M.V. Abrashev, Per Persson, Plamen Paskov, E.M. Goldys, R. Beccard, M. Heuken and Bo Monemar
Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN
Materials Science & Engineering, 2001, 82(1-3), 35-38.
Web of Science® Times Cited: 5 |
Tanja Paskova, E. Valcheva, Jens Birch, Sukkaneste Tungasmita, Per Persson, Plamen Paskov, S. Evtimova, M. Abrashev and Bo Monemar
Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer
Journal of Crystal Growth, 2001, 230(3-4), 381-386.
Web of Science® Times Cited: 18 |
M.K. Linnarsson, M.S. Janson, U. Zimmermann, B.G. Svensson, Per Persson, Lars Hultman, J. Wong-Leung, S. Karlsson, A. Schoner, H. Bleichner and E. Olsson
Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material
Applied Physics Letters, 2001, 79(13), 2016-2018.
Web of Science® Times Cited: 25 |
E. Valcheva, Tanja Paskova, M.V. Abrashev, Plamen Paskov, Per Persson, E.M. Goldys, R. Beccard, M. Heuken and Bo Monemar
Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates
Journal of Applied Physics, 2001, 90(12), 6011-6016.
Web of Science® Times Cited: 13 |
Sukkaneste Tungasmita, Jens Birch, Per Persson, Kenneth Järrendahl and Lars Hultman
Enhanced quality of epitaxial AlN thin films on 6H-SiC by ultra-high-vacuum ion-assisted reactive dc magnetron sputter deposition
Applied Physics Letters, 2000, 76(2), 170-172.
Web of Science® Times Cited: 24 |
E Valcheva, Tanja Paskova, Sukkaneste Tungasmita, Per Persson, Jens Birch, EB Svedberg, Lars Hultman and Bo Monemar
Interface structure of hydride vapor phase epitaxial GaN grown with high-temperature reactively sputtered AlN buffer
Applied Physics Letters, 2000, 76(14), 1860-1862.
Web of Science® Times Cited: 22 |
S Zangooie, Per Persson, JN Hilfiker, Lars Hultman and Hans Arwin
Microstructural and infrared optical properties of electrochemically etched highly doped 4H-SiC
Journal of Applied Physics, 2000, 87(12), 8497-8503.
Web of Science® Times Cited: 23 |
Tanja Paskova, E Valcheva, Jens Birch, Sukkaneste Tungasmita, Per Persson, R Beccard, M Heuken and Bo Monemar
Effect of Si doping of metalorganic chemical vapor deposition-GaN templates on the defect arrangement in hydride vapor phase epitaxy-GaN overgrown layers
Journal of Applied Physics, 2000, 88(10), 5729-5732.
Web of Science® Times Cited: 8 |
B Sundqvist, T Wagberg, Per Persson, P Jacobsson, Sven Stafström, R Moret and P Launois
Structure and stability of pressure polymerized C-60
Molecular crystals and liquid crystals science and technology, 2000, 13(1-4), 117-122.
|
Sukkaneste Tungasmita, Per Persson, Kenneth Järrendahl, Lars Hultman and Jens Birch
Low-energy-ion-assisted reactive sputter deposition of epitaxial AlN thin films on 6H-SiC
Materials Science Forum, 2000, 338-3, 1519-1522.
Web of Science® Times Cited: 3 |
A Hallen, Per Persson, AY Kuznetsov, Lars Hultman and BG Svensson
Damage evolution in Al-implanted 4H SiC
Materials Science Forum, 2000, 338-3, 869-872.
Web of Science® Times Cited: 11 |
Per Persson and Lars Hultman
Growth evolution of dislocation loops in ion implanted 4H-SiC
Materials Science Forum, 2000, 353-3, 315-318.
Web of Science® Times Cited: 4 |
F. Duteil, Chun-Xia Du, K.B. Joelsson, Per Persson, Lars Hultman, Galia Pozina, Wei-Xin Ni and Göran Hansson
Luminescence and microstructure of Er/O co-doped Si structures grown by MBE using Er and SiO evaporation
Materials Science in Semiconductor Processing, 2000, 3(5-6), 523-528.
Web of Science® Times Cited: 6 |
Per Persson, E Olsson and Lars Hultman
HREM investigation of structural defects in Al- and B- implanted 4H and 6H SiC
Institute of Physics Conference Series, 1999, (164), 525-528.
|
Conference Articles
Anne Henry, Anders Lundskog, Justinas Palisaitis, Ivan Ivanov, Anelia Kakanakova-Georgieva, Urban Forsberg, Per Persson and Erik Janzén
AlGaN Multiple Quantum Wells and AlN Grown in a Hot-wall MOCVD for Deep UV Applications
ECS Transactions, Vol. 25, Iss. 8, 2009.
|
Justinas Palisaitis, Peder Bergman and Per Persson
Two Dimensional X-ray Diffraction Mapping of Basal Plane Orientation on SiC Substrates
ECSCRM2008,2009, 2009.
Web of Science® Times Cited: 1
|
Vanya Darakchieva, T. Hofmann, M. Schubert, Bo Sernelius, Finn Giuliani, Mengyao Xie, Per O. A. Persson, Bo Monemar, W. J. Schaff, C.-L. Hsiao, L.-C. Chen and Y Nanishi
Unravelling the free electron behavior in InN
Optoelectronic and Microelectronic Materials and Devices, 2008, 2008.
|
Erik Janzén, Peder Bergman, Örjan Danielsson, Urban Forsberg, Christer Hallin, Jawad ul-Hassan, Anne Henry, Ivan Gueorguiev Ivanov, Anelia Kakanakova-Gueorguie, Per Persson and Qamar Ul Wahab
SiC and III-nitride Growth in a Hot-wall CVD Reactor
Materials Science Forum, ISSN 0255-5476, volume 483-485, 2005.
Web of Science® Times Cited: 5
|
Christer Hallin, Anelia Kakanakova-Georgieva, Per Persson and Erik Janzén
High quality 6H-SiC (0001) homoepitaxial layers as substrate surface for growth of AlN epitaxial layers
physica status solidi C, Vol. 2, 2005.
|
Amir Karim, Wei-Xin Ni, Anders Elfving, Per O.Å Persson and Göran Hansson
Characterization of Er/O-doped Si-LEDs with low thermal quenching
Material Research Society Symposium Proceedings, 2005.
|
A Kakanakova-Georgieva, Urban Forsberg, Christer Hallin, Per Persson, Liutauras Storasta, Galia Pozina, Jens Birch, Lars Hultman and Erik Janzén
Implementation of hot-wall MOCVD in the growth of high-quality GaN on SiC
Materials Science Forum, Vols. 433-436, 2003.
Web of Science® Times Cited: 3
|
Per Persson, H Jacobson, JM Molina-Aldareguia, Peder Bergman, T Tuomi, WJ Clegg, Erik Janzén and Lars Hultman
Structural defects in electrically degraded 4H-SiC PiN diodes
Materials Science Forum, Vols. 389-393, 2002.
Web of Science® Times Cited: 7
|
MK Linnarsson, Per Persson, H Bleichner, MS Janson, U Zimmermann, H Andersson, S Karlsson, Rositsa Yakimova, Lars Hultman and BG Svensson
Precipitate formation in heavily Al-doped 4H-SiC layers
Materials Science Forum, Vols. 353-356, 2001.
Web of Science® Times Cited: 4
|
BG Svensson, A Hallen, MK Linnarsson, AY Kuznetsov, MS Janson, D Aberg, J Osterman, Per Persson, Lars Hultman, Liutauras Storasta, Fredrik Carlsson, JP Bergman, C Jagadish and E Morvan
Doping of silicon carbide by ion implantation
Materials Science Forum, Vols. 353-356, 2001.
Web of Science® Times Cited: 15
|
Tanja Paskova, Sukkaneste Tungasmita, E Valcheva, EB Svedberg, B Arnaudov, S Evtimova, Per Persson, Anne Henry, R Beccard, M Heuken and Bo Monemar
Hydride vapour phase homoepitaxial growth of GaN on MOCVD-grown 'templates'
MRS99 Fall Meeting, 2000.
|
S Zangooie, Per Persson, JN Hilfiker, Lars Hultman, Hans Arwin and Qamar Ul Wahab
Microstructural, optical and electronic investigation of anodized 4H-SiC
Materials Science Forum, Vols. 338-342, 2000.
Web of Science® Times Cited: 4
|
Ph.D. Theses
Licentiate Theses
Ph.D., Lic. Theses
