Publications for Per O A Persson
Co-author map based on ISI articles 2007-

Keywords

°c x-ray x substrates sputter spectroscopy quantum nanorods microscopy magnetron inn gan film epitaxy epitaxial energy emission diffraction composition (0001)

Journal Articles

Arni Sigurdur Ingason, Aurelija Mockute, Martin Dahlqvist, F. Magnus, S. Olafsson, U. Arnalds, Björn Alling, Igor Abrikosov, B. Hjorvarsson, Per O Å Persson and Johanna Rosén
  A Nanolaminated Magnetic Phase: Mn2GaC
  Materials Research Letters, 2014, 2(2), 89-93.

Justinas Palisaitis, Anders Lundskog, Urban Forsberg, Erik Janzén, Jens Birch, Lars Hultman and Per Persson
  Characterization of InGaN/GaN quantum well growth using monochromated valence electron energy loss spectroscopy
  Journal of Applied Physics, 2014, 115,(034302), .

Andrejs Petruhins, Arni Sigurdur Ingason, Martin Dahlqvist, Aurelija Mockuté, Muhammad Junaid, Jens Birch, Jun Lu, Lars Hultman, Per O A Persson and Johanna Rosén
  Phase stability of Crn+1GaCn MAX phases from first principles and Cr2GaC thin-film synthesis using magnetron sputtering from elemental targets
  Physica Status Solidi. Rapid Research Letters, 2013, 7(11), 971-974.

I Jouanny, Justinas Palisaitis, C Ngo, P H. Mayrhofer, Lars Hultman, Per O A . Persson and S Kodambaka
  In situ transmission electron microscopy studies of the kinetics of Pt-Mo alloy diffusion in ZrB2 thin films
  Applied Physics Letters, 2013, 103(12), .
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V J. Keast, B Zwan, S Supansomboon, M B. Cortie and Per O A . Persson
  AuAl2 and PtAl2 as potential plasmonic materials
  Journal of Alloys and Compounds, 2013, 577, 581-586.
 Web of Science® Times Cited: 1

S Kodambaka, C Ngo, Justinas Palisaitis, P H. Mayrhofer, Lars Hultman and Per O A Persson
  Kinetics of Ga droplet decay on thin carbon films
  Applied Physics Letters, 2013, 102(16), .
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 Web of Science® Times Cited: 1

Justinas Palisaitis, Ching-Lien Hsiao, Lars Hultman, Jens Birch and Per Persson
  Thermal stability of Al1−xInxN (0 0 0 1) throughout the compositional range as investigated during in situ thermal annealing in a scanning transmission electron microscope
  Acta Materialia, 2013, 61(12), 4683-4688.
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Yen-Ting Chen, Tsutomu Araki, Justinas Palisaitis, Per O A Persson, Li-Chyong Chen, Kuei-Hsien Chen, Per-Olof Holtz, Jens Birch and Yasushi Nanishi
  Nucleation of single GaN nanorods with diameters smaller than 35 nm by molecular beam epitaxy
  Applied Physics Letters, 2013, 103(20), 203108.
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Aurelija Mockuté, Martin Dahlqvist, Jens Emmerlich, Lars Hultman, Jochen M Schneider, Per O A Persson and Johanna Rosén
  Synthesis and ab initio calculations of nanolaminated (Cr,Mn)2AlC compounds
  Physical Review B. Condensed Matter and Materials Physics, 2013, 87(9), .
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 Web of Science® Times Cited: 6

Arni Sigurdur Ingason, Aurelija Mockuté, Martin Dahlqvist, F. Magnus, S. Olafsson, U. B. Arnalds, Björn Alling, Igor A. Abrikosov, B. Hjörvarsson, Per O A Persson and Johanna Rosén
  Magnetic Self-Organized Atomic Laminate from First Principles and Thin Film Synthesis
  Physical Review Letters, 2013, 110, .
 Web of Science® Times Cited: 4

Amie Fallqvist, Naureen Ghafoor, Hanna Fager, Lars Hultman and Per O A Persson
  Self-organization during Growth of ZrN/SiNx Multilayers by Epitaxial Lateral Overgrowth
  Journal of Applied Physics, 2013, 114(224302), .
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Aurelija Mockuté, Martin Dahlqvist, Lars Hultman, Per O A Persson and Johanna Rosén
  Oxygen incorporation in Ti2AlC thin films studied by electron energy loss spectroscopy and ab initio calculations
  Journal of Materials Science, 2013, 48(10), 3686-3691.
 Web of Science® Times Cited: 1

Ching-Lien Hsiao, Justinas Palisaitis, Muhammad Junaid, Per O A Persson, Jens Jensen, Qingxiang Zhao, Lars Hultman, Li-Chyong Chen, Kuei-Hsien Chen and Jens Birch
  Room-temperature heteroepitaxy of single-phase Al1-xInxN films with full composition range on isostructural wurtzite templates
  Thin Solid Films, 2012, 524, 113-120.
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 Web of Science® Times Cited: 2

Anders Lundskog, Justinas Palisaitis, Chih-Wei Hsu, Martin Eriksson, Lars Hultman, Per Persson, Urban Forsberg, Per-Olof Holtz and Erik Janzén
  InGaN quantum dot formation mechanism on hexagonal GaN/InGaN/GaN pyramids
  Nanotechnology, 2012, 23(30), 305708.
 Web of Science® Times Cited: 3

Agnė Žukauskaitė, Christopher Tholander, Justinas Pališaitis, Per O. Å. Persson, Vanya Darakchieva, Nebiha Ben Sedrine, Ferenc Tasnádi, Björn Alling, Jens Birch and Lars Hultman
  YxAl1-xN Thin Films
  Journal of Physics D: Applied Physics, 2012, 45(42), 422001.
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 Web of Science® Times Cited: 4

Agnė Žukauskaitė, Gunilla Wingqvist, Justinas Pališaitis, Jens Jensen, Per O. Å. Persson, Ramin Matloub, Paul Muralt, Yunseok Kim, Jens Birch and Lars Hultman
  Microstructure and Dielectric Properties of Piezoelectric Magnetron Sputtered w-ScxAl1-xN thin films
  Journal of Applied Physics, 2012, 111(9), 093527.
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 Web of Science® Times Cited: 8

Junaid Muhammad, Daniel Lundin, Justinas Palisaitis, Ching-Lien Hsiao, Vanya Darakchieva, Jens Jensen, Per Persson, Per Sandström, W-J Lai, L-C Chen, K-H Chen, Ulf Helmersson, Lars Hultman and Jens Birch
  Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al2O3 (0001) by high power impulse magnetron sputtering
  Journal of Applied Physics, 2011, 110(12), 123519.
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 Web of Science® Times Cited: 5

Ching-Lien Hsiao, Justinas Palisaitis, Junaid Muhammad, Ruei-San Chen, Per Persson, Per Sandström, Per-Olof Holtz, Lars Hultman and Jens Birch
  Spontaneous Formation of AlInN Core–Shell Nanorod Arrays by Ultrahigh-Vacuum Magnetron Sputter Epitaxy
  Applied Physics Express, 2011, 4(115002), .
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 Web of Science® Times Cited: 1

Mihails Cubarovs, Henrik Pedersen, Hans Högberg, Vanya Darakchieva, Jensen Jens, Per Persson and Anne Henry
  CVD growth of sp2-hybridized boron nitride using aluminum nitride as buffer layer
  Physica Status Solidi. Rapid Research Letters, 2011, 5(10-11), 397-399.
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 Web of Science® Times Cited: 5

Justinas Palisaitis, Ching-Lien Hsiao, Muhammad Junaid, Jens Birch, Lars Hultman and Per O.Å. Persson
  Effect of strain on low-loss electron energy loss spectra of group III-nitrides
  Physical Review B. Condensed Matter and Materials Physics, 2011, 84(24), 245301.
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 Web of Science® Times Cited: 5

Mark D Tucker, Per Persson, Mathew C Guenette, Johanna Rosén, Marcela M M Bilek and David R McKenzie
  Substrate orientation effects on the nucleation and growth of the M(n+1)AX(n) phase Ti2AlC
  JOURNAL OF APPLIED PHYSICS, 2011, 109(1), 014903.
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 Web of Science® Times Cited: 5

Justinas Palisaitis, Ching-Lien Hsiao, Muhammad Junaid, Mengyao Xie, Vanya Darakchieva, Jean-Francois Carlin, Nicolas Grandjean, Jens Birch, Lars Hultman and Per O.Å. Persson
  Standard-free composition measurements of Alx In1–xN by low-loss electron energy loss spectroscopy
  physica status solidi (RRL) – Rapid Research Letters, 2011, 5(2), 50-52.
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 Web of Science® Times Cited: 9

Muhammad Junaid, Ching-Lien Hsiao, Justinas Palisaitis, Jens Jensen, Per Persson, Lars Hultman and Jens Birch
  Electronic-grade GaN(0001)/Al2O3(0001) grown by reactive DC-magnetron sputter epitaxy using a liquid Ga target
  Applied Physics Letters, 2011, 98(14), 141915.
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 Web of Science® Times Cited: 9

Ali Khatibi, Justinas Palisaitis, Carina Höglund, Anders Eriksson, Per O. Å. Persson, Jens Jensen, Jens Birch, Per Eklund and Lars Hultman
  Face-Centered Cubic (Al1-xCrx)2O3
  Thin Solid Films, 2011, 519(8), 2426-2429.
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 Web of Science® Times Cited: 15

Niklas Gunnarsson Sarius, P. Leisner, Per O A Persson, J. Hald and Lars Hultman
  Influence of ultrasound and cathode rotation on the formation of intrinsic stress in Ni films during electrodeposition
  Transactions of the Institute of Metal Finishing, 2011, 89(3), 137-142.
 Web of Science® Times Cited: 2

P. O. Å. Persson, Carina Höglund, Jens Birch and Lars Hultman
  Ti2Al(O,N) formation by solid state reaction between substoichiometric TiN thin films and Al2O3(0001) substrates
  Thin Solid Films, 2011, 519(8), 2421-2425.
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 Web of Science® Times Cited: 4

Gintautas Abrasonis, Thomas Oates, Gyoergy J Kovacs, Joerg Grenzer, Per Persson, Karl-Heinz H Heinig, Andrius Martinavicius, Nicole Jeutter, Carsten Baehtz, Mark Tucker, Marcela M M Bilek and Wolfhard Moeller
  Nanoscale precipitation patterns in carbon-nickel nanocomposite thin films: Period and tilt control via ion energy and deposition angle
  JOURNAL OF APPLIED PHYSICS, 2010, 108(4), 043503.
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 Web of Science® Times Cited: 9

Carina Höglund, Jens Birch, Björn Alling, Javier Bareño, Zsolt Czigány, Per O. Å. Persson, Gunilla Wingqvist, Agne Zukauskaite and Lars Hultman
  Wurtzite-structure Sc1-xAlxN solid solution films grown by reactive magnetron sputter epitaxy: structural characterization and first-principles calculations
  Journal of Applied Physics, 2010, 107(12), 123515.
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 Web of Science® Times Cited: 19

Carina Höglund, Björn Alling, Jens Birch, Manfred Beckers, Per O. Å. Persson, Carsten Baehtz, Zsolt Czigány, Jens Jensen and Lars Hultman
  Effects of volume mismatch and electronic structure on the decomposition of ScAlN and TiAlN solid solutions
  Physical Review B. Condensed Matter and Materials Physics, 2010, 81(22), 224101.
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 Web of Science® Times Cited: 6

Jenny Frodelius, Per Eklund, Manfred Beckers, Per Persson, Hans Högberg and Lars Hultman
  Sputter deposition from a Ti2AlC target: Process characterization and conditions for growth of Ti2AlC
  Thin Solid Films, 2010, 518(6), 1621-1626.
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 Web of Science® Times Cited: 23

Per Persson, Johanna Rosén, D R McKenzie and M M M Bilek
  Formation of the MAX-phase oxycarbide Ti2AlC1-xOx studied via electron energy-loss spectroscopy and first-principles calculations
  PHYSICAL REVIEW B, 2009, 80(9), 092102.
 Web of Science® Times Cited: 13

Vanya Darakchieva, N P Barradas, Mengyao Xie, K Lorenz, E Alves, M Schubert, Per Persson, Finn Giuliani, F Munnik, Ching-Lien Hsiao, L W Tu and W J Schaff
  Role of impurities and dislocations for the unintentional n-type conductivity in InN
  PHYSICA B-CONDENSED MATTER, 2009, 404(22), 4476-4481.
 Web of Science® Times Cited: 8

Gholamreza Yazdi, Per Persson, D Gogova, Lars Hultman, Mikael Syväjärvi and Rositsa Yakimova
  Aligned AlN nanowires by self-organized vapor-solid growth
  NANOTECHNOLOGY, 2009, 20(49), 495304.
 Web of Science® Times Cited: 11

Muhammed Qadir Israr, Jamil Rana Sadaf, Li-Li Yang, Omer Nour, Magnus Willander, Justinas Palisaitis and Per Persson
  Trimming of aqueous chemically grown ZnO nanorods into ZnO nanotubes and their comparative optical properties
  APPLIED PHYSICS LETTERS, 2009, 95(7), 073114.
 Web of Science® Times Cited: 22

Axel Flink, R M Saoubi, Finn Giuliani, J Sjolen, T Larsson, Per Persson, M P Johansson and Lars Hultman
  Microstructural characterization of the tool-chip interface enabled by focused ion beam and analytical electron microscopy
  WEAR, 2009, 266(11-12), 1237-1240.
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 Web of Science® Times Cited: 3

Manfred Beckers, Carina Höglund, Carsten Baehtz, R.M.S. Martins, Per O. Å. Persson, Lars Hultman and W. Möller
  The influence of substrate temperature and Al mobility on the microstructural evolution of magnetron sputtered ternary Ti-Al-N thin films
  Journal of Applied Physics, 2009, 106(6), 064915.
 Web of Science® Times Cited: 5

Vanya Darakchieva, T Hofmann, M Schubert, Bo Sernelius, Bo Monemar, Per Persson, Finn Giuliani, E Alves, H Lu and W J Schaff
  Free electron behavior in InN: On the role of dislocations and surface electron accumulation
  Applied Physics Letters, 2009, 94(2), 022109.
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 Web of Science® Times Cited: 23

Axel Knutsson, M.P. Johansson, Per Persson, Lars Hultman and Magnus Odén
  Thermal decomposition products in arc evaporated TiAlN/TiN multilayers
  Applied Physics Letters, 2008, 93(14), 143110.
 Web of Science® Times Cited: 24

E. Lewin, Per Persson, Martina Lattemann, M. Stüber, M. Gorgoi, A. Sandell, C. Ziebert, F. Schäfers, W. Braun, J. Halbritter, S. Ulrich, W. Eberhardt, Lars Hultman, H. Siegbahn, S. Svensson and U. Jansson
  On the origin of a third spectral component of C1s XPS-spectra for nc-TiC/a-C nanocomposite thin films
  Surface & Coatings Technology, 2008, 202(15), 3563-3570.
 Web of Science® Times Cited: 35

Naureen Ghafoor, Fredrik Eriksson, Per O.Å Persson, Lars Hultman and Jens Birch
  Effects of ion-assisted growth on the layer definition in Cr/Sc multilayers
  Thin Solid Films, 2008, 516(6), 982-990.
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 Web of Science® Times Cited: 6

Per Persson, S. Kodambaka, I. Petrov and Lars Hultman
  Epitaxial Ti2AlN(0 0 0 1) thin film deposition by dual-target reactive magnetron sputtering
  Acta Materialia, 2007, 55(13), 4401-4407.
 Web of Science® Times Cited: 30

E. Valcheva, S. Dimitrov, Bo Monemar, H. Haratizadeh, Per Persson, H. Amano and I. Akasaki
  Influence of well-width fluctuations on the electronic structure of GaN/AlxGa1-xN multiquantum wells with graded interfaces
  Acta Physica Polonica. A, 2007, 112(2), 395-400.
 Web of Science® Times Cited: 1

Hans Söderberg, Axel Flink, Jens Birch, Per Persson, Manfred Beckers, Lars Hultman and Magnus Odén
  Growth and characterization of TiN/SiN(001) superlattice films
  Journal of Materials Research, 2007, 22(11), 3255-3264.
 Web of Science® Times Cited: 20

Jones Alami, Per Eklund, Jon M. Andersson, Martina Lattemann, Erik Wallin, Johan Böhlmark, Per Persson and Ulf Helmersson
  Phase tailoring of Ta thin films by highly ionized pulsed magnetron sputtering
  Thin Solid Films, 2007, 515(7-8), 3434-3438.
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 Web of Science® Times Cited: 40

Martina Lattemann, A.P. Ehiasarian, Johan Böhlmark, Per .Å.O. Persson and Ulf Helmersson
  Investigation of high power impulse magnetron sputtering pretreated interfaces for adhesion enhancement of hard coatings on steel
  Surface & Coatings Technology, 2006, 200(22-23), 6495-6499.
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 Web of Science® Times Cited: 39

O. Wilhelmsson, J.-P. Palmquist, E. Lewin, Jens Emmerlich, Per Eklund, Per Persson, Hans Högberg, S. Li, R. Ahuja, O. Eriksson, Lars Hultman and U. Jansson
  Deposition and characterization of ternary thin films within the Ti-Al-C system by DC magnetron sputtering
  Journal of Crystal Growth, 2006, 291(1), 290-300.
 Web of Science® Times Cited: 80

Per Persson, Lars Hultman, M.S. Janson and A. Hallen
  Ostwald ripening of interstitial-type dislocation loops in 4H-silicon carbide
  Journal of Applied Physics, 2006, 100(5), .
 Web of Science® Times Cited: 6

E Valcheva, Jens Birch, Per Persson, S Tungasmita and Lars Hultman
  Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering
  Journal of Applied Physics, 2006, 100(12), .
 Web of Science® Times Cited: 6

Anelia Kakanakova-Georgieva, Per Persson, A. Kasic, Lars Hultman and Erik Janzén
  Superior material properties of AlN on vicinal 4H-SiC
  Journal of Applied Physics, 2006, 100(3), .
 Web of Science® Times Cited: 2

Herbert Willmann, P. H. Mayrhofer, Per Persson, A. E. Reiter, Lars Hultman and C. Mitterer
  Thermal stability of Al-Cr-N hard coatings
  Scripta Materialia, 2006, 54(11), 1847-1851.
 Web of Science® Times Cited: 91

Martina Lattemann, K. Sell, J. Ye, Per Persson and S. Ulrich
  Stress reduction in nanocomposite coatings consisting of hexagonal and cubic boron nitride
  Surface & Coatings Technology, 2006, 200( 22-23 SPEC. ISS.), 6459-6464.
 Web of Science® Times Cited: 10

Naureen Ghafoor, Per O. Å. Persson, Fredrik Eriksson, Franz Schäfers and Jens Birch
  Interface engineered ultra-short period Cr/Ti multilayers as high reflectance mirrors and polarizers for soft X-rays of lambda=2.74 nm wavelength
  Applied Optics, 2006, 45(1), 137-143.
 Web of Science® Times Cited: 2

S. Prasalovich, V. Popok, Per Persson and E.E.B. Campbell
  Experimental studies of complex crater formation under cluster implantation of solids
  European Physical Journal D: Atomic, Molecular and Optical Physics, 2005, 36(1), 79-88.
 Web of Science® Times Cited: 12

Tanja Paskova, Vanya Darakchieva, Plamen Paskov, Jens Birch, E Valcheva, Per Persson, B Arnaudov, S Tungasmitta and Bo Monemar
  Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers
  Journal of Crystal Growth, 2005, 281(1), 55-61.
 Web of Science® Times Cited: 46

Timo Seppänen, Per Persson, Lars Hultman, Jens Birch and G.Z. Radnoczi
  Magnetron sputter epitaxy of wurtzite Al1-x Inx N (0.1
  Journal of Applied Physics, 2005, 97(8), 083503.

Tanja Paskova, Vanya Darakchieva, Plamen Paskov, Jens Birch, E. Valcheva, Per Persson, B. Arnaudov, S. Tungasmita and Bo Monemar
  Nonpolar a-plane HVPE GaN: growth and in-plane anisotropic properties
  Physica Status Solidi. C, Current topics in solid state physics, 2005, 2, 2027-2031.

Timo Seppänen, Per Persson, Lars Hultman, Jens Birch and G. Z. Radnoczi
  Magnetron sputter epitaxy of wurtzite Al1-xInxN (0.1 x 0.9) by Dual Reactive DC Magnetron Sputter Deposition
  Journal of Applied Physics, 2005, 97, 83503-1-83503-9.
 Web of Science® Times Cited: 25

Per Eklund, Jens Emmerlich, Hans Högberg, Ola Wilhelmsson, Peter Isberg, Jens Birch, Per O. Å. Persson, Ulf Jansson and Lars Hultman
  Structural, electrical, and mechanical properties of nc-TiC/a-SiC nanocomposite thin films
  Journal of Vacuum Science & Technology B, 2005, 23(6), 2486-2495.
 Web of Science® Times Cited: 42

Jones Alami, Per O. Å. Persson, Denis Music, J. T. Gudmundsson, Johan Böhlmark and Ulf Helmersson
  Ion-assisted Physical Vapor Deposition for enhanced film properties on non-flat surfaces
  Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, 2005, 23(2), 278-280.
 Web of Science® Times Cited: 75

J Hallstedt, E Suvar, Per Persson, Lars Hultman, YB Wang and HH Radamson
  Growth of high quality epitaxial Si1-x-yGexCy layers by using chemical vapor deposition
  Applied Surface Science, 2004, 224(01-Apr), 46-50.
 Web of Science® Times Cited: 3

J. Hallstedt, M. Blomqvist, Per Persson, Lars Hultman and H. H. Radamson
  The effect of carbon and germanium on phase transformation of nickel on Si1-x-yGexCy epitaxial layers
  Journal of Applied Physics, 2004, 95(5), 2397-2402.
 Web of Science® Times Cited: 9

Jens Emmerlich, Hans Högberg, Szilvia Sasvári, Per Persson, Lars Hultman, Jens-Petter Palmquist, Ulf Jansson, Jon M. Molina-Aldareguia and Zsolt Czigány
  Growth of Ti3SiC2 thin films by elemental target magnetron sputtering
  Journal of Applied Physics, 2004, 96(9), 4817-4826.
 Web of Science® Times Cited: 96

Jens-Petter Palmquist, Sa Li, Per Persson, Jens Emmerlich, Ola Wilhelmsson, Hans Högberg, M. I. Katsnelson, Börje Johansson, Rajeev Ahuja, Olle Eriksson, Lars Hultman and Ulf Jansson
  Mn+1AXn phases in the Ti-Si-C system studied by thin-film synthesis and ab initio calculations
  Physical Review B. Condensed Matter and Materials Physics, 2004, 70(16), 165401.
 Web of Science® Times Cited: 115

Anelia Kakanakova-Georgieva, Per Persson, Rositsa Yakimova, Lars Hultman and Erik Janzén
  Sublimation epitaxy of AlN on SiC: Growth morphology and structural features
  Journal of Crystal Growth, 2004, 273(1-2), 161-166.
 Web of Science® Times Cited: 8

J.A.D. Jensen, P. Pocwiardowski, Per Persson, Lars Hultman and P. Moller
  Acoustic streaming enhanced electrodeposition of nickel
  Chemical Physics Letters, 2003, 368(5-6), 732-737.
 Web of Science® Times Cited: 17

C. Menon, A.-C. Lindgren, Per Persson, Lars Hultman and H.H. Radamson
  Selective epitaxy of Si1-xGex layers for complementary metal oxide semiconductor applications
  Journal of the Electrochemical Society, 2003, 150(4), .
 Web of Science® Times Cited: 5

Per Persson, Lars Hultman, M.S. Janson, A. Hallen and Rositsa Yakimova
  Dislocation loop evolution in ion implanted 4H-SiC
  Journal of Applied Physics, 2003, 93(11), 9395-9397.
 Web of Science® Times Cited: 9

J.A.D. Jensen, Per Persson, K. Pantleon, Magnus Odén, Lars Hultman and M.A.J. Somers
  Electrochemically deposited nickel membranes, process-microstructure-property relationships
  Surface & Coatings Technology, 2003, 172(1), 79-89.
 Web of Science® Times Cited: 7

Sukkaneste Tungasmita, Per Persson, Timo Seppänen, Lars Hultman and Jens Birch
  Growth of epitaxial (SiC)(x)(AlN)(1-x) thin films on 6H-SiC by ion-assisted dual magnetron sputter deposition
  Materials Science Forum, 2002, 389-3, 1481-1484.

E Valcheva, Tanja Paskova, Per Persson and Bo Monemar
  Nanopipes in thick GaN films grown at high growth rate
  Physica status solidi. A, Applied research, 2002, 194(2), 532-535.
 Web of Science® Times Cited: 3

A. Hallen, M.S. Janson, A.Yu. Kuznetsov, D. Aberg, M.K. Linnarsson, B.G. Svensson, Per Persson, Fredrik Carlsson, Liutauras Storasta, Peder Bergman, S.G Sridhara and Y. Zhang
  Ion implantation of silicon carbide
  Nuclear Instruments and Methods in Physics Reseach B, 2002, 186(1-4), 186-194.
 Web of Science® Times Cited: 34

E. Valcheva, Tanja Paskova, Per Persson, Lars Hultman and Bo Monemar
  Misfit defect formation in thick GaN layers grown on sapphire by hydride vapor phase epitaxy
  Applied Physics Letters, 2002, 80(9), 1550.
 Web of Science® Times Cited: 9

Sukkaneste Tungasmita, Per Persson, Lars Hultman and Jens Birch
  Pulsed low-energy ion-assisted growth of epitaxial aluminum nitride layer on 6H-silicon carbide by reactive magnetron sputtering
  Journal of Applied Physics, 2002, 91(6), 3551-3555.
 Web of Science® Times Cited: 6

A.E. Abom, Per Persson, Lars Hultman and Mats Eriksson
  Influence of gate metal film growth parameters on the properties of gas sensitive field-effect devices
  Thin Solid Films, 2002, 409(2), 233-242.
 Web of Science® Times Cited: 13

Per Persson, Lars Hultman, H. Jacobson, Peder Bergman, Erik Janzén, J.M. Molina-Aldareguia, W.J. Clegg and T. Tuomi
  Structural defects in electrically degraded 4H-SiC p+/n-/n+ diodes
  Applied Physics Letters, 2002, 80(25), 4852.
 Web of Science® Times Cited: 40

J.-P. Palmquist, U. Jansson, Timo Seppänen, Per Persson, Jens Birch, Lars Hultman and P. Isberg
  Magnetron sputtered epitaxial single-phase Ti3SiC2 thin films
  Applied Physics Letters, 2002, 81(5), 835.
 Web of Science® Times Cited: 94

Per Persson, Lars Hultman, M.S. Janson, A. Hallen, Rositsa Yakimova, D. Panknin and W. Skorupa
  On the nature of ion implantation induced dislocation loops in 4H-silicon carbide
  Journal of Applied Physics, 2002, 92(5), 2501.
 Web of Science® Times Cited: 20

E. Valcheva, Tanja Paskova, M.V. Abrashev, Per Persson, Plamen Paskov, E.M. Goldys, R. Beccard, M. Heuken and Bo Monemar
  Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN
  Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, 2001, 82(1-3), 35-38.
 Web of Science® Times Cited: 5

Tanja Paskova, E. Valcheva, Jens Birch, Sukkaneste Tungasmita, Per Persson, Plamen Paskov, S. Evtimova, M. Abrashev and Bo Monemar
  Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer
  Journal of Crystal Growth, 2001, 230(3-4), 381-386.
 Web of Science® Times Cited: 18

M.K. Linnarsson, M.S. Janson, U. Zimmermann, B.G. Svensson, Per Persson, Lars Hultman, J. Wong-Leung, S. Karlsson, A. Schoner, H. Bleichner and E. Olsson
  Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material
  Applied Physics Letters, 2001, 79(13), 2016-2018.
 Web of Science® Times Cited: 29

E. Valcheva, Tanja Paskova, M.V. Abrashev, Plamen Paskov, Per Persson, E.M. Goldys, R. Beccard, M. Heuken and Bo Monemar
  Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates
  Journal of Applied Physics, 2001, 90(12), 6011-6016.
 Web of Science® Times Cited: 13

Sukkaneste Tungasmita, Jens Birch, Per Persson, Kenneth Järrendahl and Lars Hultman
  Enhanced quality of epitaxial AlN thin films on 6H-SiC by ultra-high-vacuum ion-assisted reactive dc magnetron sputter deposition
  Applied Physics Letters, 2000, 76(2), 170-172.
 Web of Science® Times Cited: 24

E Valcheva, Tanja Paskova, Sukkaneste Tungasmita, Per Persson, Jens Birch, EB Svedberg, Lars Hultman and Bo Monemar
  Interface structure of hydride vapor phase epitaxial GaN grown with high-temperature reactively sputtered AlN buffer
  Applied Physics Letters, 2000, 76(14), 1860-1862.
 Web of Science® Times Cited: 22

S Zangooie, Per Persson, JN Hilfiker, Lars Hultman and Hans Arwin
  Microstructural and infrared optical properties of electrochemically etched highly doped 4H-SiC
  Journal of Applied Physics, 2000, 87(12), 8497-8503.
 Web of Science® Times Cited: 24

Tanja Paskova, E Valcheva, Jens Birch, Sukkaneste Tungasmita, Per Persson, R Beccard, M Heuken and Bo Monemar
  Effect of Si doping of metalorganic chemical vapor deposition-GaN templates on the defect arrangement in hydride vapor phase epitaxy-GaN overgrown layers
  Journal of Applied Physics, 2000, 88(10), 5729-5732.
 Web of Science® Times Cited: 9

B Sundqvist, T Wagberg, Per Persson, P Jacobsson, Sven Stafström, R Moret and P Launois
  Structure and stability of pressure polymerized C-60
  Molecular crystals and liquid crystals science and technology, 2000, 13(1-4), 117-122.

Sukkaneste Tungasmita, Per Persson, Kenneth Järrendahl, Lars Hultman and Jens Birch
  Low-energy-ion-assisted reactive sputter deposition of epitaxial AlN thin films on 6H-SiC
  Materials Science Forum, 2000, 338-3, 1519-1522.
 Web of Science® Times Cited: 3

A Hallen, Per Persson, AY Kuznetsov, Lars Hultman and BG Svensson
  Damage evolution in Al-implanted 4H SiC
  Materials Science Forum, 2000, 338-3, 869-872.
 Web of Science® Times Cited: 11

Per Persson and Lars Hultman
  Growth evolution of dislocation loops in ion implanted 4H-SiC
  Materials Science Forum, 2000, 353-3, 315-318.
 Web of Science® Times Cited: 4

F. Duteil, Chun-Xia Du, K.B. Joelsson, Per Persson, Lars Hultman, Galia Pozina, Wei-Xin Ni and Göran Hansson
  Luminescence and microstructure of Er/O co-doped Si structures grown by MBE using Er and SiO evaporation
  Materials Science in Semiconductor Processing, 2000, 3(5-6), 523-528.
 Web of Science® Times Cited: 6

Per Persson, E Olsson and Lars Hultman
  HREM investigation of structural defects in Al- and B- implanted 4H and 6H SiC
  Institute of Physics Conference Series, 1999, (164), 525-528.

Conference Articles

Anne Henry, Anders Lundskog, Justinas Palisaitis, Ivan Ivanov, Anelia Kakanakova-Georgieva, Urban Forsberg, Per Persson and Erik Janzén
  AlGaN Multiple Quantum Wells and AlN Grown in a Hot-wall MOCVD for Deep UV Applications
  ECS Transactions, Vol. 25, Iss. 8, 2009.


Justinas Palisaitis, Peder Bergman and Per Persson
  Two Dimensional X-ray Diffraction Mapping of Basal Plane Orientation on SiC Substrates
  ECSCRM2008,2009, 2009.


 Web of Science® Times Cited: 1

Vanya Darakchieva, T. Hofmann, M. Schubert, Bo Sernelius, Finn Giuliani, Mengyao Xie, Per O. A. Persson, Bo Monemar, W. J. Schaff, C.-L. Hsiao, L.-C. Chen and Y Nanishi
  Unravelling the free electron behavior in InN
  Optoelectronic and Microelectronic Materials and Devices, 2008, 2008.


Erik Janzén, Peder Bergman, Örjan Danielsson, Urban Forsberg, Christer Hallin, Jawad ul-Hassan, Anne Henry, Ivan Gueorguiev Ivanov, Anelia Kakanakova-Gueorguie, Per Persson and Qamar Ul Wahab
  SiC and III-nitride Growth in a Hot-wall CVD Reactor
  Materials Science Forum, ISSN 0255-5476, volume 483-485, 2005.


 Web of Science® Times Cited: 5

Christer Hallin, Anelia Kakanakova-Georgieva, Per Persson and Erik Janzén
  High quality 6H-SiC (0001) homoepitaxial layers as substrate surface for growth of AlN epitaxial layers
  physica status solidi C, Vol. 2, 2005.


Amir Karim, Wei-Xin Ni, Anders Elfving, Per O.Å Persson and Göran Hansson
  Characterization of Er/O-doped Si-LEDs with low thermal quenching
  Material Research Society Symposium Proceedings, 2005.


A Kakanakova-Georgieva, Urban Forsberg, Christer Hallin, Per Persson, Liutauras Storasta, Galia Pozina, Jens Birch, Lars Hultman and Erik Janzén
  Implementation of hot-wall MOCVD in the growth of high-quality GaN on SiC
  Materials Science Forum, Vols. 433-436, 2003.


 Web of Science® Times Cited: 3

Per Persson, H Jacobson, JM Molina-Aldareguia, Peder Bergman, T Tuomi, WJ Clegg, Erik Janzén and Lars Hultman
  Structural defects in electrically degraded 4H-SiC PiN diodes
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 7

MK Linnarsson, Per Persson, H Bleichner, MS Janson, U Zimmermann, H Andersson, S Karlsson, Rositsa Yakimova, Lars Hultman and BG Svensson
  Precipitate formation in heavily Al-doped 4H-SiC layers
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 4

BG Svensson, A Hallen, MK Linnarsson, AY Kuznetsov, MS Janson, D Aberg, J Osterman, Per Persson, Lars Hultman, Liutauras Storasta, Fredrik Carlsson, JP Bergman, C Jagadish and E Morvan
  Doping of silicon carbide by ion implantation
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 15

Tanja Paskova, Sukkaneste Tungasmita, E Valcheva, EB Svedberg, B Arnaudov, S Evtimova, Per Persson, Anne Henry, R Beccard, M Heuken and Bo Monemar
  Hydride vapour phase homoepitaxial growth of GaN on MOCVD-grown 'templates'
  MRS99 Fall Meeting, 2000.


S Zangooie, Per Persson, JN Hilfiker, Lars Hultman, Hans Arwin and Qamar Ul Wahab
  Microstructural, optical and electronic investigation of anodized 4H-SiC
  Materials Science Forum, Vols. 338-342, 2000.


 Web of Science® Times Cited: 4

Ph.D. Theses

Justinas Pališaitis
  Valence Electron Energy Loss Spectroscopy of III-Nitride Semiconductors
  2012.


  Fulltext PDF

Licentiate Theses

Amie Fallqvist
  Aberration-Corrected Analytical Electron Microscopy of Transition Metal Nitride and Silicon Nitride Multilayers
  2013.


  Fulltext PDF

Justinas Palisaitis
  Electron Energy Loss Spectroscopy of III-Nitride Semiconductors
  2011.


  Fulltext PDF