Publications for Per-Olof Holtz
Co-author map based on ISI articles 2007-

Publications mentioned in social media 1 times*

Keywords

temperature spectroscopy quantum qds qd pyramids polarization photoluminescence p>the optical neutral nanorods ingan hexagonal gan exciton energy emission charged biexciton

Journal Articles

Pawinee Klangtakai, Sakuntam Sanorpim, Fredrik Karlsson, Per-Olof Holtz, Samuk Pimanpang and Kentaro Onabe
  Anomalous excitation-power-dependent photoluminescence of InGaAsN/GaAs T-shaped quantum wire
  Physica Status Solidi (a) applications and materials science, 2014, 211(8), 1740-1744.

S. Yang, H. C. Hsu, W-R. Liu, B. H. Lin, C. C. Kuo, C-H. Hsu, Martin Eriksson, Per-Olof Holtz and W. F. Hsieh
  Recombination dynamics of a localized exciton bound at basal stacking faults within the m-(p)lane ZnO film
  Applied Physics Letters, 2014, 105(1), 011106.
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Volodymyr Khranovskyy, M.O. Eriksson, György Zoltán Radnóczi, A. Khalid, H. Zhang, Per-Olof Holtz, Lars Hultman and Rositsa Yakimova
  Photoluminescence study of basal plane stacking faults in ZnO nanowires
  Physica. B, Condensed matter, 2014, 439, 50-53.
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Muhammad Israr Qadir, Sadaf Jamil Rana, Omer Nur, Magnus Willander, L.A. Larsson and Per-Olof Holtz
  Fabrication of ZnO nanodisks from structural transformation of ZnO nanorods through natural oxidation and their emission characteristics
  Ceramics International, 2014, 40(1), 2435-2439.
 Web of Science® Times Cited: 1

Anders Lundskog, Chih-Wei Hsu, K. Fredrik Karlsson, Supaluck Amloy, Daniel Nilsson, Urban Forsberg, Per-Olof Holtz and Erik Janzén
  Direct generation of linearly-polarized photon emission with designated orientations from site-controlled InGaN quantum dots
  Light: Science & Applications, 2014, 3, e139.
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 Web of Science® Times Cited: 2

Yen-Ting Chen, Tsutomu Araki, Justinas Palisaitis, Per O A Persson, Li-Chyong Chen, Kuei-Hsien Chen, Per-Olof Holtz, Jens Birch and Yasushi Nanishi
  Nucleation of single GaN nanorods with diameters smaller than 35 nm by molecular beam epitaxy
  Applied Physics Letters, 2013, 103(20), 203108.
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Rie Togashi, Sho Yamamoto, Fredrik K. Karlsson, Hisashi Murakami, Yoshinao Kumagai, Per-Olof Holtz and Akinori Koukitu
  Effect of High NH3 Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates
  Japanese Journal of Applied Physics, 2013, 52(8), .
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Ruei-San Chen, Chih-Che Tang, Ching-Lien Hsiao, Per Olof Holtz and Jens Birch
  Electronic transport properties in aluminum indium nitride nanorods grown by magnetron sputter epitaxy
  Applied Surface Science, 2013, 285, 625-628.
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Chih-Wei Hsu, Evgenii Moskalenko, Martin Eriksson, Anders Lundskog, Fredrik K. Karlsson, Urban Forsberg, Erik Janzén and Per-Olof Holtz
  The charged exciton in an InGaN quantum dot on a GaN pyramid
  Applied Physics Letters, 2013, 103(1), .
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 Web of Science® Times Cited: 1

Daniel Dufåker, K. Fredrik Karlsson, L. O. Mereni, V. Dimastrodonato, G. Juska, E. Pelucchi and Per-Olof Holtz
  Quantum dot asymmetry and the nature of excited hole states probed by the doubly positively charged exciton X2+
  Physical Review B. Condensed Matter and Materials Physics, 2013, 88(4), .
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Daniel Dufåker, Karlsson Fredrik, L O. Mereni, V Dimastrodonato, G Juska, E Pelucchi and Per-Olof Holtz
  Evidence of nonadiabatic exciton-phonon interaction probed by second-order LO-phonon replicas of single quantum dots
  Physical Review B. Condensed Matter and Materials Physics, 2013, 87(8), .
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Hsu-Cheng Hsu, Hsin-Ying Huang, Martin Eriksson, Tsen-Fang Dai and Per-Olof Holtz
  Surface related and intrinsic exciton recombination dynamics in ZnO nanoparticles synthesized by a sol-gel method
  Applied Physics Letters, 2013, 102(1), 013109.
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 Web of Science® Times Cited: 6

Anders Lundskog, Chih-Wei Hsu, K Fredrik Karlsson, Urban Forsberg, Per-Olof Holtz and Erik Janzén
  Controlled growth of hexagonal GaN pyramids by hot-wall MOCVD
  Journal of Crystal Growth, 2013, 363, 287-293.
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Supaluck Amloy, Fredrik Karlsson, T. G. Andersson and Per-Olof Holtz
  On the polarized emission from exciton complexes in GaN quantum dots
 
Altmetric usage: 1

  Applied Physics Letters, 2012, 100(021901), .
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 Web of Science® Times Cited: 6

K. Fredrik Karlsson, Amloy Supaluck, Y. T. Chen, K. H. Chen, H. C. Hsu, C. L. Hsiao, L. C. Chen and Per-Olof Holtz
  Polarized emission and excitonic fine structure energies of InGaN quantum dots
  Physica. B, Condensed matter, 2012, 407(10), 1553-1555.

J. W. Sun, Volodymyr Khranovskyy, M. Mexis, Martin Eriksson, Mikael Syväjärvi, I. Tsiaoussis, Gholamreza Yazdi, H. Peyre, S. Juillaguet, J. Camassel, Per-Olof Holtz, Peder Bergman, Lars Hultman and Rositsa Yakimova
  Comparative micro-photoluminescence investigation of ZnO hexagonal nanopillars and the seeding layer grown on 4H-SiC
  Journal of Luminescence, 2012, 132(1), 122-127.

S Yang, B H Lin, C C Kuo, H C Hsu, W-R Liu, M O Eriksson, Per-Olof Holtz, C-S Chang, C-H Hsu and W F Hsieh
  Improvement of Crystalline and Photoluminescence of Atomic Layer Deposited m-Plane ZnO Epitaxial Films by Annealing Treatment
  Crystal Growth & Design, 2012, 12(10), 4745-4751.
 Web of Science® Times Cited: 2

Supaluck Amloy, Evgenii Moskalenko, M Eriksson, K Fredrik Karlsson, Y T Chen, K H Chen, H C Hsu, C L Hsiao, L C Chen and Per-Olof Holtz
  Dynamic characteristics of the exciton and the biexciton in a single InGaN quantum dot
  Applied Physics Letters, 2012, 101(6), .
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 Web of Science® Times Cited: 1

Anders Lundskog, Justinas Palisaitis, Chih-Wei Hsu, Martin Eriksson, Lars Hultman, Per Persson, Urban Forsberg, Per-Olof Holtz and Erik Janzén
  InGaN quantum dot formation mechanism on hexagonal GaN/InGaN/GaN pyramids
  Nanotechnology, 2012, 23(30), 305708.
 Web of Science® Times Cited: 4

Anders Lundskog, Urban Forsberg, Per-Olof Holtz and Erik Janzén
  Morphology control of hot-wall MOCVD selective area -grown hexagonal GaN pyramids
  Crystal Growth & Design, 2012, 12(11), 5491-5496.
 Web of Science® Times Cited: 3

Per-Olof Holtz, Chih-Wei Hsu, L A Larsson, K Fredrik Karlsson, Daniel Dufåker, Anders Lundskog, Urban Forsberg, Erik Janzén, Evgenii Moskalenko, V Dimastrodonato, L Mereni and E Pelucchi
  Optical characterization of individual quantum dots
  Physica. B, Condensed matter, 2012, 407(10), 1472-1475.

Volodymyr Khranovskyy, Rositsa Yakimova, Fredrik Karlsson, Abdul S Syed, Per-Olof Holtz, Zelalem Nigussa Urgessa, Oluwatobi Samuel Oluwafemi and Johannes Reinhardt Botha
  Comparative PL study of individual ZnO nanorods, grown by APMOCVD and CBD techniques
  Physica. B, Condensed matter, 2012, 407(10), 1538-1542.
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 Web of Science® Times Cited: 4

Rui Masuda, Chih-Wei Hsu, Martin Eriksson, Yoshinao Kumagai, Akinori Koukitu and Per-Olof Holtz
  Improvements in Optical Properties of (0001) ZnO Layers Grown on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy Using Thick Buffer Layers
  Japanese Journal of Applied Physics, 2012, 51(3), 031103.

Supaluck Amloy, K. H. Yu, Fredrik Karlsson, R Farivar, T. G. Andersson and Per-Olof Holtz
  Size dependent biexciton binding energies in GaN quantum dots
  Applied Physics Letters, 2011, 25(251903), .
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 Web of Science® Times Cited: 9

Ching-Lien Hsiao, Justinas Palisaitis, Junaid Muhammad, Ruei-San Chen, Per Persson, Per Sandström, Per-Olof Holtz, Lars Hultman and Jens Birch
  Spontaneous Formation of AlInN Core–Shell Nanorod Arrays by Ultrahigh-Vacuum Magnetron Sputter Epitaxy
  Applied Physics Express, 2011, 4(115002), .
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 Web of Science® Times Cited: 2

V F Agekyan, Per-Olof Holtz, G Karczewski, V N Katz, E S Moskalenko, A Yu Serov and N G Filosofov
  Magnetoluminescence of CdTe/MnTe/CdMgTe heterostructures with ultrathin MnTe layers
  Semiconductors (Woodbury, N.Y.), 2011, 45(10), 1301-1305.
 Web of Science® Times Cited: 2

M A Dupertuis, Fredrik Karlsson, D Y Oberli, E Pelucchi, A Rudra, Per-Olof Holtz and E Kapon
  Symmetries and the Polarized Optical Spectra of Exciton Complexes in Quantum Dots
  Physical Review Letters, 2011, 107(12), 127403.
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 Web of Science® Times Cited: 13

Evgenii Moskalenko, L.A. Larsson and Per-Olof Holtz
  Circularly polarized emission from ensembles of InAs/GaAs quantum dots
  Journal of Applied Physics, 2011, 110(1), 013510.
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 Web of Science® Times Cited: 1

Chih-Wei Hsu, Anders Lundskog, Fredrik Karlsson, Urban Forsberg, Erik Janzén and Per-Olof Holtz
  Single Excitons in InGaN Quantum Dots on GaN Pyramid Arrays
  Nano letters (Print), 2011, 11(6), 2415-2418.
 Web of Science® Times Cited: 17

Supaluck Amloy, Y T Chen, Fredrik Karlsson, K H Chen, H C Hsu, C L Hsiao, L C Chen and Per-Olof Holtz
  Polarization-resolved fine-structure splitting of zero-dimensional InxGa1-xN excitons
  PHYSICAL REVIEW B, 2011, 83(20), 201307.
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 Web of Science® Times Cited: 8

Evgenii Moskalenko, L A Larsson and Per-Olof Holtz
  Spin polarization of the neutral exciton in a single quantum dot
  SUPERLATTICES AND MICROSTRUCTURES, 2011, 49(3), 294-299.
 Web of Science® Times Cited: 1

Daniel Dufåker, L. O. Mereni, Fredrik K. Karlsson, V. Dimastrodonato, G. Juska, Per-Olof Holtz and E. Pelucchi
  Exciton-phonon coupling in single quantum dots with different barriers
  Applied Physics Letters, 2011, 98(25), 251911.
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 Web of Science® Times Cited: 2

Chih-Wei Hsu, Abhijit Ganguly, Chin-Pei Chen, Chun-Chiang Kuo, Plamen Paskov, Per-Olof Holtz, Li-Chyong Chen and Kuei-Hsien Chen
  Optical properties of functionalized GaN nanowires
  JOURNAL OF APPLIED PHYSICS, 2011, 109(5), 053523.
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 Web of Science® Times Cited: 5

Arvid Larsson, Evgenii Moskalenko and Per-Olof Holtz
  Manipulating the Spin Polarization of Excitons in a Single Quantum Dot by Optical Means
  Applied Physics Letters, 2011, 98(7), 071906.
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 Web of Science® Times Cited: 3

Daniel Dufåker, Fredrik Karlsson, V Dimastrodonato, L O Mereni, Bo Sernelius, Per-Olof Holtz and E Pelucchi
  Phonon replicas of charged and neutral exciton complexes in single quantum dots
  Physical Review B. Condensed Matter and Materials Physics, 2010, 82(20), .
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 Web of Science® Times Cited: 5

Evgenii Moskalenko, Arvid Larsson and Per-Olof Holtz
  Spin polarization of neutral excitons in quantum dots: the role of the carrier collection area
  Nanotechnology, 2010, 21(34), .
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 Web of Science® Times Cited: 1

I.A. Aleksandrov, K.S. Zhuravlev, V.G. Mansurov and Per-Olof Holtz
  Linearly polarized photoluminescence from an ensemble of wurtzite GaN/AlN quantum dots
  JETP Letters: Journal of Experimental And Theoretical Physics Letters, 2010, 91(9), 452-454.

L. Arvid Larsson, Mats Larsson, E. S. Moskalenko and Per-Olof Holtz
  Temperature and Magnetic Field Effects on the Transport Controlled Charge State of a Single Quantum Dot
  NANOSCALE RESEARCH LETTERS, 2010, 5(7), 1150-1155.
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 Web of Science® Times Cited: 3

J. Y. Andersson, L. Hoglund, B. Noharet, Q. Wang, P. Ericsson, S. Wissmar, C. Asplund, H. Malm, H. Martijn, M. Hammar, O. Gustafsson, S. Hellstrom, H. Radamson and Per-Olof Holtz
  Quantum structure based infrared detector research and development within Acreos centre of excellence IMAGIC
  Infrared physics & technology, 2010, 53(4), 227-230.
 Web of Science® Times Cited: 1

Fredrik Karlsson, M A Dupertuis, D Y Oberli, E Pelucchi, A Rudra, Per-Olof Holtz and E Kapon
  Fine structure of exciton complexes in high-symmetry quantum dots: Effects of symmetry breaking and symmetry elevation
  PHYSICAL REVIEW B, 2010, 81(16), 161307.
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 Web of Science® Times Cited: 48

Georgios Tzamalis, Vincent Lemaur, Fredrik Karlsson, Per-Olof Holtz, Mats Andersson, Xavier Crispin, Jerome Cornil and Magnus Berggren
  Fluorescence light emission at 1 eV from a conjugated polymer
  CHEMICAL PHYSICS LETTERS, 2010, 489(1-3), 92-95.
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 Web of Science® Times Cited: 6

V F Agekyan, Per-Olof Holtz, G Karczewski, E S Moskalenko, A Yu Serov and N G Filosofov
  Effect of a magnetic field on energy transfer of band states to the Mn2+ 3d shell in the CdMgTe matrix with ultrathin CdMnTe layers
  PHYSICS OF THE SOLID STATE, 2010, 52(1), 27-31.
 Web of Science® Times Cited: 2

Bouchaib Adnane, Fredrik Karlsson, Göran Hansson, Per-Olof Holtz and Wei-Xin Ni
  Spatially direct and indirect transitions of self-assembled SiGe/Si quantum dots studied by photoluminescence excitation spectroscopy
  Applied Physics Letters, 2010, 96(18), 181107.
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 Web of Science® Times Cited: 9

Linda Höglund, Fredrik Karlsson, Per-Olof Holtz, H. Pettersson, L.E. Pistol, Q. Wang, S. Almqvist, C. Asplund, H. Malm, E. Petrini and J. Y. Andersson
  Energy level scheme of an InAs/InGaAs/GaAs quantum dots-in-a-well infraredphotodetector structure
  Physical Review B. Condensed Matter and Materials Physics, 2010, 82(3), 035314.
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 Web of Science® Times Cited: 5

Bouchaib Adnane, Fredrik Karlsson, Ming Zhao, Göran Hansson, Per-Olof Holtz and Wei-Xin Ni
  Origin of photoresponse at 8-14 μm in stacks of self-assembled SiGe/Si quantum dots
  Physical Review B. Condensed Matter and Materials Physics, 2009, , .

L Hoglund, Per-Olof Holtz, H Pettersson, C Asplund, Q Wang, S Almqvist, H Malm, E Petrini and J Y Andersson
  Selective optical doping to predict the performance and reveal the origin of photocurrent peaks in quantum dots-in-a-well infrared photodetectors
  INFRARED PHYSICS and TECHNOLOGY, 2009, 52(6), 272-275.

Evgenii Moskalenko, Arvid Larsson and Per-Olof Holtz
  Spin polarization of the neutral exciton in a single InAs quantum dot at zero magnetic field
  Physical Review B. Condensed Matter and Materials Physics, 2009, 80(19), 193413.
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 Web of Science® Times Cited: 8

Volodymyr Khranovskyy, I Tsiaoussis, Arvid Larsson, Per-Olof Holtz and Rositsa Yakimova
  Nanointegration of ZnO with Si and SiC
  PHYSICA B-CONDENSED MATTER, 2009, 404(22), 4359-4363.
 Web of Science® Times Cited: 5

M Esmaeili, M Gholami, H Haratizadeh, Bo Monemar, Per-Olof Holtz, S Kamiyama, H Amano and I Akasaki
  Experimental and theoretical investigations of optical properties of GaN/AlGaN MQW nanostructures. Impact of built-in polarization fields
  OPTO-ELECTRONICS REVIEW, 2009, 17(4), 293-299.
 Web of Science® Times Cited: 2

Annika Lenz, Linnea Selegård, Fredrik Söderlind, Arvid Larsson, Per-Olof Holtz, Kajsa Uvdal, Lars Ojamäe and Per-Olov Käll
  ZnO Nanoparticles Functionalized with Organic Acids: An Experimental and Quantum-Chemical Study
  The Journal of Physical Chemistry C, 2009, 113(40), 17332-17341.
 Web of Science® Times Cited: 22

M Gholami, M Esmaeili, H Haratizadeh, Per-Olof Holtz and M Hammar
  Evaluation of optical quality and properties of Ga0.64In0.36N0.006As0.994 lattice matched to GaAs by using photoluminescence spectroscopy
  OPTO-ELECTRONICS REVIEW, 2009, 17(3), 260-264.

Bouchaib Adnane, Yi-Fan Lai, Jia-Min Shieh, Per-Olof Holtz and Wei-Xin Ni
  Photoluminescence study of nanocrystalline-Si(Ge) embedded in mesoporous silica
  Solid-State Electronics, 2009, 53(8), 862-864.
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 Web of Science® Times Cited: 3

Evgenii Moskalenko, Arvid Larsson, Mats Larsson, Per-Olof Holtz, Winston V Schoenfeld and Pierre M Petroff
  Comparative Magneto-Photoluminescence Study of Ensembles and of Individual InAs Quantum Dots
  Nano letters (Print), 2009, 9(1), 353-359.
 Web of Science® Times Cited: 6

Linda Höglund, Q. Wang, S. Almqvist, E. Petrini, J. Y. Andersson, Per-Olof Holtz, H. Pettersson, C. Asplund and H. Malm
  Optical pumping as artificial doping in quantum dots-in-a-well infrared photodetectors
  Applied Physics Letters, 2009, 94(5), 053503.
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 Web of Science® Times Cited: 3

M. Gholami, H. Haratizadeh, M. Esmaeili, R. Amiri, Per-Olof Holtz and M. Hammar
  Alternation of band gap and localization of excitons in InGaNAs nanostructures with low nitrogen content
  Nanotechnology, 2008, 19(31), 315705.
 Web of Science® Times Cited: 1

T S Shamirzaev, A V Nenashev, A K Gutakovskii, A K Kalagin, K S Zhuravlev, M Larsson and Per-Olof Holtz
  Atomic and energy structure of InAs/AlAs quantum dots
  , 2008, , .
 Web of Science® Times Cited: 20

C.L. Hsiao, T.W. Liu, C.T. Wu, H.C. Hsu, G.M. Hsu, L.C. Chen, W.Y. Shiao, C.C. Yang, Andreas Gällström, Per-Olof Holtz, C.C. Chen and K.H. Chen
  High-phase-purity zinc-blende InN on r -plane sapphire substrate with controlled nitridation pretreatment
  Applied Physics Letters, 2008, 92(11), .
 Web of Science® Times Cited: 19

Evgenii Moskalenko, Arvid Larsson, Mats Larsson, Per-Olof Holtz, W. V. Schoenfeld and P. M. Petroff
  Effective tuning of the charge state of a single InAs/GaAs quantum dot by an external magnetic field
  Physical Review B. Condensed Matter and Materials Physics, 2008, 78(7), 075306.
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 Web of Science® Times Cited: 7

Volodymyr Khranovskyy, Gholamreza Yazdi, Arvid Larsson, S Hussain, Per-Olof Holtz and Rositsa Yakimova
  Growth and characterization of ZnO nanostructured material
  Journal of Optoelectronics and Advanced Materials, 2008, 10(11), 2969-2975.

Linda Höglund, Per-Olof Holtz, H. Pettersson, C. Asplund, Q. Wang, H. Malm, S. Almqvist, E. Petrini and J. Y. Andersson
  Bias mediated tuning of the detection wavelength in asymmetrical quantum dots-in-a-well infrared photodetectors
  Applied Physics Letters, 2008, 93(20), 203512.
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 Web of Science® Times Cited: 4

Linda Höglund, Per-Olof Holtz, H. Pettersson, C. Asplund, Q. Wang, S. Almqvist, S. Smuk, E. Petrini and J. Y. Andersson
  Bias and temperature dependence of the escape processes in quantum dots-in-a-well infrared photodetectors
  Applied Physics Letters, 2008, 93(10), 103501.
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 Web of Science® Times Cited: 11

Qingxiang Zhao, Li-Li Yang, Bo Sernelius, Per-Olof Holtz and Magnus Willander
  Surface recombination in ZnO nanorods grown by chemical bath deposition
  Journal of Applied Physics, 2008, 104(7), 073526.
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 Web of Science® Times Cited: 39

P.F. Gomes, F. Iikawa, F. Cerdeira, Mats Larsson, Anders Elfving, Göran Hansson, Wei-Xin Ni and Per-Olof Holtz
  Type-I optical emissions in GeSi quantum dots
  Applied Physics Letters, 2007, 91(5), .
 Web of Science® Times Cited: 3

M. Esmaeili, M. Sabooni, H. Haratizadeh, Plamen Paskov, Bo Monemar, Per-Olof Holtz, S. Kamiyama and M. Iwaya
  Optical properties of GaN/AlGaN QW nanostructures with different well and barrier widths
  Journal of Physics: Condensed Matter, 2007, 19(35), .
 Web of Science® Times Cited: 5

Hamid Harati Zadeh, Bo Monemar, Plamen Paskov, Per-Olof Holtz, E Valcheva, M Iwaya, S Kamiyama, H Amano and I Akasaki
  Optical observation of discrete well width fluctuations in wide band gap III-nitride quantum wells
  Physica status solidi. B, Basic research, 2007, 244(5), 1727-1734.
 Web of Science® Times Cited: 4

Evgenii Moskalenko, Mats Larsson, Fredrik Karlsson, Per-Olof Holtz, Bo Monemar, W.V. Schoenfeld and P.M. Petroff
  Enhancement of the luminescence intensity of InAs/GaAs quantum dots induced by an external electric field
  Nano letters (Print), 2007, 7(1), 188-193.
 Web of Science® Times Cited: 12

Evgenii Moskalenko, Mats Larsson, Fredrik Karlsson, Per-Olof Holtz, Bo Monemar, W.V. Schoenfeld and P.M. Petroff
  The effect of the external lateral electric field on the luminescence intensity of InAs/GaAs quantum dots
  Physics of the solid state, 2007, 49(10), 1995-1998.
 Web of Science® Times Cited: 1

M. Sabooni, M. Esmaeili, Hamid Harati Zadeh, Bo Monemar, Plamen Paskov, Per-Olof Holtz, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Exciton localization behaviour in different well width undoped GaN/Al 0.07Ga0.93N nanostructures
  , 2007, , .
 Web of Science® Times Cited: 4

M. Esmaeili, Hamid Harati Zadeh, Bo Monemar, Plamen Paskov, Per-Olof Holtz, Peder Bergman, M. Iwaya, S. Kamiyama, H. Amano and I Akasaki
  Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: Influence of Al composition and Si doping
  Nanotechnology, 2007, 18(2), .
 Web of Science® Times Cited: 7

V. Donchev, Evgenii Moskalenko, K.F. Karlsson, Per-Olof Holtz, Bo Monemar, W.V. Schoenfeld, J.M. Garcia and P.M. Petroff
  Enhancement of the photoluminescence intensity of a single InAs/GaAs quantum dot by separate generation of electrons and holes
  Physics of the solid state, 2006, 48(10), 1993-1999.

K.S. Zhuravlev, D.D. Ree, V.G. Mansurov, A.Yu. Nikitin, Plamen Paskov and Per-Olof Holtz
  Microphotoluminescence of GaN/AlN quantum dots grown by MBE
  Physica Status Solidi. C, Current topics in solid state physics, 2006, 3, 2048-2051.

B. Arnaudov, Plamen Paskov, Hamid Harati Zadeh, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Radiative recombination mechanism in highly modulation doped GaN/AlGaN multiple quantum wells
  Physica Status Solidi. C, Current topics in solid state physics, 2006, 6, 1888-1891.
 Web of Science® Times Cited: 4

Tatiana Shubina, D.S. Plotnikov, A. Vasson, J. Leymarie, Mats Larsson, Per-Olof Holtz, Bo Monemar, H. Lu, W.J. Schaff and P.S. Kop¿ev
  Surface-plasmon resonances in indium nitride with metal-enriched nano-particles
  Journal of Crystal Growth, 2006, 288(2), 230-235.
 Web of Science® Times Cited: 7

Evgenii Moskalenko, Mats Larsson, Per-Olof Holtz, W. V. Schoenfeld and P. M. Petroff
  Carrier transport in self-organized InAs/GaAs quantum-dot structures studied by single-dot spectroscopy
  Physical Review B, 2006, 73(15), .
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 Web of Science® Times Cited: 23

Mats Larsson, Evgenii Moskalenko, Arvid Larsson, Per-Olof Holtz, C. Verdozzi, C.-O. Almbladh, W. V. Schoenfeld and P. M. Petroff
  Magnetic field effects on optical and transport properties in InAs/GaAs quantum dots
  Physical Review B, 2006, 74(24), .
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 Web of Science® Times Cited: 6

Linda Höglund, Per-Olof Holtz, C. Asplund, Q. Wang, S. Almqvist, H. Malm, E. Petrini, H. Pettersson and J. Y. Andersson
  Origin of photocurrent in lateral quantum dots-in-a-well infrared photodetectors
  Applied Physics Letters, 2006, 88(21), .
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 Web of Science® Times Cited: 28

Linda Höglund, E. Petrini, C. Asplund, H. Malm, J. Y. Andersson and Per-Olof Holtz
  Optimising uniformity of InAs/(InGaAs)/GaAs quantum dots grown by metal organic vapor phase epitaxy
  Applied Surface Science, 2006, 252(15), 5525-5529.
   Fulltext  PDF  
 Web of Science® Times Cited: 21

Mats Larsson, Anders Elfving, Wei-Xin Ni, Göran V. Hansson and Per-Olof Holtz
  Growth-temperature-dependent band alignment in Si/Ge quantum dots from photoluminescence spectroscopy
  Physical Review B, 2006, 73(19), 195319-1--195319-7.
   Fulltext  PDF  
 Web of Science® Times Cited: 22

Evgenii Moskalenko, Fredrik Karlsson, V.T. Donchev, Per-Olof Holtz, Bo Monemar, W.V. Schoenfeld and P.M. Petroff
  Effects of separate carrier generation on the emission properties of InAs/GaAs quantum dots
  Nano letters (Print), 2005, 5(11), 2117-2122.
 Web of Science® Times Cited: 16

Evgenii Moskalenko, K.Fredrik Karlsson, V. Donchev, Per-Olof Holtz, W.V. Schoenfeld and P.M. Petroff
  Effect of an electric field on the carrier collection efficiency of InAs quantum dots
  Physics of the solid state, 2005, 47(11), 2154-2161.

TJ Ochalski, A Grzegorczyk, M Rudzinski, PK Larsen, Per-Olof Holtz, Peder Bergman and Plamen Paskov
  Optical study of AlGaN/GaN based HEMT structures grown on sapphire and SiC
  Physica status solidi. A, Applied research, 2005, 202(7), 1300-1307.
 Web of Science® Times Cited: 3

T.J. Ochalski, A. Grzegorczyk, M. Rudzinski, P.K. Larsen, E. Kowalczyk, Per-Olof Holtz, Peder Bergman and Plamen Paskov
  Optical study of AlGaN/GaN based HEMT structures
  Physica Status Solidi. C, Current topics in solid state physics, 2005, 2, 2791-2794.

E.S. Moskalenko, Fredrik Karlsson, V. Donchev, Per-Olof Holtz, Bo Monemar, W.V. Schoenfeld and P.M. Petroff
  Exploitation of an Additional Infrared Laser to Modulate the Luminescence Intensity from InAs Quantum Dots
  AIP Conference Proceedings, 2005, 772, 705-706.

Amir Karim, G. V. Hansson, Wei-Xin Ni, Per-Olof Holtz, Mats Larsson and H.A. Atwater
  Photoluminescence Studies of Sn Quantum Dots in Si Grown by MBE
  Optical materials (Amsterdam), 2005, 27(5), 836-840.
 Web of Science® Times Cited: 7

Mats Larsson, Per-Olof Holtz, Anders Elfving, Göran Hansson and Wei-Xin Ni
  Reversed quantum-confined Stark effect and an asymmetric band alignment observed for type-II Si∕Ge quantum dots
  Physical Review B, 2005, 71(11), 113301.
   Fulltext  PDF  
 Web of Science® Times Cited: 5

Bo Monemar, Plamen Paskov, H Haradizadeh, Peder Bergman, E Valcheva, Vanya Darakchieva, B Arnaudov, Tanja Paskova, Per-Olof Holtz, Galia Pozina, S Kamiyama, M Iwaya, H Amano and I Akasaki
  Optical investigation of AlGaN/GaN quantum wells and superlattices
  Physica status solidi. A, Applied research, 2004, 201(10), 2251-2258.

Plamen Paskov, Tanja Paskova, Per-Olof Holtz and Bo Monemar
  Polarized photoluminescence of exciton-polaritons in free-standing GaN
  Physica status solidi. A, Applied research, 2004, 201(4), 678-685.
 Web of Science® Times Cited: 9

H. Haratizadeh, Bo Monemar, Plamen Paskov, Per-Olof Holtz, Galia Pozina, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Time resolved photoluminescence study of Si modulation doped GaN/Al 0.07Ga0.93N multiple quantum wells
  Physica status solidi. B, Basic research, 2004, 241(5), 1124-1133.
 Web of Science® Times Cited: 9

A.A. Toropov, O.V. Nekrutkina, Tatiana Choubina, Th. Gruber, C. Kirchner, A. Waag, Fredrik Karlsson, Per-Olof Holtz and Bo Monemar
  Temperature-dependent exciton polariton photoluminescence in ZnO films
  Physical Review B. Condensed Matter and Materials Physics, 2004, 69(16), 165205.
 Web of Science® Times Cited: 21

V. Donchev, Fredrik Karlsson, Evgenii Moskalenko, Per-Olof Holtz, Bo Monemar, J.M. Schoenfeld, J.M. Garcia and M. Petroff
  Temperature Study of the Photoluminescence of a Single InAs/GaAs Quantum Dot
  Physica Status Solidi. C, Current topics in solid state physics, 2004, 3, 608.

Evgenii Moskalenko, Fredrik Karlsson, V. Donchev, Per-Olof Holtz, W.V. Schoenfeld and P.M. Petroff
  The effect of an additional infrared laser on the carrier collection efficiency of InAs quantum dots
  Applied Physics Letters, 2004, 84(24), 4896-4898.
 Web of Science® Times Cited: 6

E.S. Moskalenko, Fredrik Karlsson, V Donchev, Per-Olof Holtz, W.V. Schoenfeld, J.M. Garcia and P.M. Petroff
  The Effect of an Additional Infrared Excitation on the Collection Efficiency of InAs/GaAs Quantum Dots
  Virtual Journal of Nanoscale Science & Technology, 2004, 7, .

E.S. Moskalenko, Fredrik Karlsson, V Donchev, Per-Olof Holtz, Bo Monemar, W.V. Schoenfeld and P.M. Petroff
  Effective optical manipulation of the charge state and emission intensity of the InAs/GaAs quantum dots by means of additional infrared illumination
  Applied Physics Letters, 2004, 85(5), 754-756.

Plamen Paskov, Tanja Paskova, Per-Olof Holtz and Bo Monemar
  Polarized photoluminescence study of free and bound excitons in free-standing GaN
  , 2004, , .
 Web of Science® Times Cited: 24

Hamid Harati Zadeh, Bo Monemar, Plamen Paskov, Peder Bergman, Bo Sernelius, Per-Olof Holtz, M Iwaya, S Kamiyama, H Amano and I Akasaki
  Photoluminescence study of Si-doped GaN/Al0.07Ga0.93N multiple quantum wells with different dopant position
  Applied Physics Letters, 2004, 84(25), 5071-5073.
 Web of Science® Times Cited: 10

Tatiana Shubina, AA Toropov, VN Jmerik, MG Tkachman, Alexander Lebedev, VV Ratnikov, AA Sitnikova, VA Vekshin, SV Ivanov, PS Kop'ev, P Bigenwald, Peder Bergman, Per-Olof Holtz and Bo Monemar
  Intrinsic electric fields in N-polarity GaN/AlxGa1-xN quantum wells with inversion domains
  Physical Review B. Condensed Matter and Materials Physics, 2003, 67(19), .
 Web of Science® Times Cited: 7

Tatiana Shubina, VN Jmerik, SV Ivanov, PS Kop'ev, A Kavokin, K Fredrik Karlsson, Per-Olof Holtz and Bo Monemar
  Narrow-line excitonic photoluminescence in GaN/AlxGa1-xN quantum well structures with inversion domains
  Physical Review B. Condensed Matter and Materials Physics, 2003, 67(24), 241306.

Tatiana Shubina, V.N. Jmerik, M.G. Tkachman, V.A. Vekshin, A.A. Toropov, S.V. Ivanov, P.S. Kop'ev, Peder Bergman, Fredrik Karlsson, Per-Olof Holtz and Bo Monemar
  Optical properties of GaN/AlGaN quantum wells with inversion domains
  Physica status solidi. A, Applied research, 2003, 195(3), 537-542.
 Web of Science® Times Cited: 1

Mats Larsson, Anders Elfving, Per-Olof Holtz, Göran Hansson and Wei-Xin Ni
  Photoluminescence study of Si/Ge quantum dots
  Surface Science, 2003, 532-535, 832-836.
 Web of Science® Times Cited: 15

Fredrik Karlsson, Per-Olof Holtz, Evgenii Moskalenko, Bo Monemar, W.V. Schoenfeld, J.M. Garcia and P.M. Petroff
  Effective tuning of the charge-state of single In(Ga)As/GaAs quantum dots by below barrier band gap excitation
  Surface Science, 2003, 532-535, 843-847.

Evgenii Moskalenko, V. Donchev, Fredrik Karlsson, Per-Olof Holtz, Bo Monemar, W.V. Schoenfeld, J.M. Garcia and M. Petroff
  Effect of an additional infrared excitation on the luminescence efficiency of a single InAs/GaAs quantum dot
  , 2003, 68(15), 1553171-15531714.
 Web of Science® Times Cited: 28

Bo Monemar, Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Peder Bergman, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum well structures
  Physica status solidi. B, Basic research, 2003, 237(1), 353-364.
 Web of Science® Times Cited: 22

Tatiana Shubina, Fredrik Karlsson, V.N. Jmerik, S.V. Ivanov, P.S. Kavokin, Per-Olof Holtz, P.S. Kopev and Bo Monemar
  Narrow-line excitonic luminescence in GaN/AlGaN nanostructures based on inversion domains
  Physica Status Solidi. C, Current topics in solid state physics, 2003, 0(7), 2716-2720.

Mats Larsson, Anders Elfving, Per-Olof Holtz, Göran Hansson and Wei-Xin Ni
  Luminescence study of Si/Ge quantum dots
  Physica. E, Low-Dimensional systems and nanostructures, 2003, 16(3-4), 476-480.
 Web of Science® Times Cited: 7

Mats Larsson, Anders Elfving, Per-Olof Holtz, Göran Hansson and Wei-Xin Ni
  Spatially direct and indirect transitions observed for Si/Ge quantum dots
  Applied Physics Letters, 2003, 82(26), 4785-4787.
 Web of Science® Times Cited: 30

Bo Monemar, Plamen Paskov, H. Haratizadeh, Per-Olof Holtz, Peder Bergman, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Photoluminescence of InGaN/GaN and AlGaN/GaN multiple quantum well structures: Role of depletion fields and polarization fields
  Physica status solidi. A, Applied research, 2003, 195(3), 523-527.
 Web of Science® Times Cited: 5

K Reginski, T Ochalski, J Muszalski, M Bugajski, JP Bergman, Per-Olof Holtz and Bo Monemar
  Investigations of optical properties of active regions in vertical cavity surface emitting lasers grown by MBE
  Thin Solid Films, 2002, 412(1-2), 107-113.
 Web of Science® Times Cited: 5

Tatiana Shubina, AA Toropov, SV Ivanov, JP Bergman, Tanja Paskova, Per-Olof Holtz and Bo Monemar
  Peculiarities of exciton-polaritons in GaN at different polarizations studied by mu-photoluminescence spectroscopy
  Physica status solidi. A, Applied research, 2002, 190(1), 205-211.

Tatiana Shubina, VN Jmerik, MG Tkachman, VA Vekshin, VV Ratnikov, AA Toropov, AA Sitnikova, SV Ivanov, Peder Bergman, Fredrik Karlsson, Per-Olof Holtz and Bo Monemar
  Nanometric-scale fluctuations of intrinsic electric fields in GaN/AlGaN quantum wells with inversion domains
  Physica status solidi. B, Basic research, 2002, 234(3), 919-923.
 Web of Science® Times Cited: 4

Plamen Paskov, Vanya Darakchieva, Tanja Paskova, Per-Olof Holtz and Bo Monemar
  Anisotropy of the in-plane strain in GaN grown on A-plane sapphire
  Physica status solidi. B, Basic research, 2002, 234(3), 892-896.
 Web of Science® Times Cited: 3

Plamen Paskov, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Phonon-assisted photoluminescence in InGaN/GaN multiple quantum wells
  Physica status solidi. B, Basic research, 2002, 234(3), 755-758.
 Web of Science® Times Cited: 13

Fredrik Karlsson, Evgenii Moskalenko, Per-Olof Holtz, Bo Monemar, W.V. Schoenfeld, J.M. Garcia and P.M. Petroff
  Optical charging of self-assembled InAs/GaAs quantum dots
  Physica scripta. T, 2002, 101, 140-142.

Plamen Paskov, Tanja Paskova, Per-Olof Holtz and Bo Monemar
  Anisotropy of the free exciton emission in GaN grown on a-plane sapphire
  Physica status solidi. A, Applied research, 2002, 190(1), 75-79.
 Web of Science® Times Cited: 18

Fredrik Karlsson, Evgenii Moskalenko, Per-Olof Holtz, Bo Monemar, J.M. Garcia, W.V. Schoenfeld and P.M. Petroff
  The influence of carrier diffusion on the formation of charged excitons in InAs/GaAs quantum dots
  Physica. E, Low-Dimensional systems and nanostructures, 2002, 13(2-4), 101-104.
 Web of Science® Times Cited: 4

Evgenii Moskalenko, Fredrik Karlsson, Per-Olof Holtz, Bo Monemar, W.V. Schoenfeld, J.M. Garcia and P.M. Petroff
  Acceptor-induced threshold energy for the optical charging of InAs single quantum dots
  Physical Review B. Condensed Matter and Materials Physics, 2002, 66(19), 1953321-19533211.
 Web of Science® Times Cited: 24

Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Effect of n-type modulation doping on the photoluminescence of GaN/Al0.07Ga0.93N multiple quantum wells
  Applied Physics Letters, 2002, 80(8), 1373.
 Web of Science® Times Cited: 15

Evgenii Moskalenko, Fredrik Karlsson, Per-Olof Holtz, Bo Monemar, W.V. Schoenfeld, J.M. Garcia and P.M. Petroff
  Formation of the charged exciton complexes in self-assembled InAs single quantum dots
  Journal of Applied Physics, 2002, 92(11), 6787-6793.
 Web of Science® Times Cited: 16

Plamen Paskov, Per-Olof Holtz, Bo Monemar, JM Garcia, WV Schoenfeld and PM Petroff
  Excited-state magnetoluminescence of InAs/GaAs self-assembled quantum dots
  Japanese Journal of Applied Physics, 2001, 40(3B), 1998-2001.

Plamen Paskov, Tanja Paskova, Per-Olof Holtz and Bo Monemar
  Spin-exchange splitting of excitons in GaN
  Physical Review B. Condensed Matter and Materials Physics, 2001, 64(11), .
 Web of Science® Times Cited: 28

Plamen Paskov, Per-Olof Holtz, Bo Monemar, J.M. Garcia, W.V. Schoenfeld and P.M. Petroff
  Optical up-conversion processes in InAs quantum dots
  Japanese Journal of Applied Physics, 2001, 40(3 B), 2080-2083.
 Web of Science® Times Cited: 6

Fredrik Karlsson, Evgenii Moskalenko, Per-Olof Holtz, Bo Monemar, W.V. Schoenfeld, J.M. Garcia and P.M. Petroff
  Temperature influence on optical charging of self-assembled InAs/GaAs semiconductor quantum dots
  Applied Physics Letters, 2001, 78(19), 2952-2954.
 Web of Science® Times Cited: 30

Plamen Paskov, Tanja Paskova, Per-Olof Holtz and Bo Monemar
  Internal structure of free excitons in GaN
  Physica status solidi. B, Basic research, 2001, 228(2), 467-470.
 Web of Science® Times Cited: 3

Evgenii Moskalenko, Fredrik Karlsson, Per-Olof Holtz, Bo Monemar, W.V. Schoenfeld, J.M. Garcia and P.M. Petroff
  Influence of excitation energy on charged exciton formation in self-assembled InAs single quantum dots
  Physical review. B, Condensed matter and materials physics, 2001, 64, 085302.
 Web of Science® Times Cited: 31

Q.X. Zhao, M. Willander, Peder Bergman, Per-Olof Holtz, W. Lu and S.C. Shen
  Dynamic properties of radiative recombination in p-type d-doped layers in GaAs
  Physical review. B, Condensed matter and materials physics, 2001, 63, 125337.
 Web of Science® Times Cited: 3

Q.X. Zhao, S. Wongmanerod, M. Willander, Per-Olof Holtz, S.M. Wang and M. Sadeghi
  Electronic structure of beryllium acceptors confined in GaAs/AlxGa1-xAs quantum wells
  , 2001, , .
 Web of Science® Times Cited: 9

S Wongmanerod, Bo Sernelius, Per-Olof Holtz, Bo Monemar, O Mauritz, K Reginski and M Bugajski
  Many-body effects in highly p-type modulation-doped GaAs/AlxGa1-xAs quantum wells
  Physical Review B. Condensed Matter and Materials Physics, 2000, 61(4), 2794-2798.
 Web of Science® Times Cited: 9

QX Zhao, S Wongmanerod, Magnus Willander, Per-Olof Holtz, E Selvig and BO Fimland
  Effects of monolayer AlAs insertion in modulation doped GaAs/AlxGa1-xAs quantum-well structures
  Physical Review B. Condensed Matter and Materials Physics, 2000, 62(16), 10984-10989.
 Web of Science® Times Cited: 5

Plamen Paskov, Per-Olof Holtz, S. Wongmanerod, Bo Monemar, J.M. Garcia, W.V. Schoenfeld and P.M. Petroff
  Auger processes in InAs self-assembled quantum dots
  Physica. E, Low-Dimensional systems and nanostructures, 2000, 6(1), 440-443.
 Web of Science® Times Cited: 7

Plamen Paskov, Per-Olof Holtz, Bo Monemar, J.M. Garcia, W.V. Schoenfeld and P.M. Petroff
  Magnetoluminescence of highly excited InAs/GaAs self-assembled quantum dots
  Physical Review B. Condensed Matter and Materials Physics, 2000, 62(11), 7344-7349.
 Web of Science® Times Cited: 26

S. Wongmanerod, Plamen Paskov, Per-Olof Holtz, Bo Monemar, O. Mauritz, K. Reginski and M. Bugajski
  Magneto-optical studies of highly p-type modulation-doped GaAs/AlxGa1-xAs quantum wells
  Physical review. B, Condensed matter and materials physics, 2000, 62, 15952.
 Web of Science® Times Cited: 2

Plamen Paskov, Per-Olof Holtz, Bo Monemar, W. Schoenfeld, J.M. Garcia and P.M. Petroff
  Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots
  Applied Physics Letters, 2000, 77(6), 812-814.
 Web of Science® Times Cited: 61

Bo Monemar, Peder Bergman, J Dalfors, Galia Pozina, Bo Sernelius, Per-Olof Holtz, H Amano and I Akasaki
  Radiative recombination in In0.15Ga0.85N/GaN multiple quantum well structures
  MRS Internet journal of nitride semiconductor research, 1999, 4(16), .

Books

Per-Olof Holtz and Q.X. Zhao
  Impurities Confined in Quantum Wells
    Springer Verlag, 2004.


Conference Articles

Per Olof Holtz, Chi-Wei Hsu, Anders Lundskog, K. Fredrik Karlsson, Urban Forsberg and Erik Janzén
  Deterministic Single InGaN Quantum Dots grown on GaN Micro-Pyramid Arrays
  2012 International Conference on Nano Materials and Electric Devices, ICNMED 2012; ; 19 December 2012 through 20 December 2012, 2013.


Chih-Wei Hsu, Anders Lundskog, Fredrik Karlsson, Urban Forsberg, Erik Janzén and Per-Olof Holtz
  Optical characterization of InGaN quantum dots on GaN pyramids grown by MOCVD
  The 30th International Conference on the Physics of Semiconductors (ICPS30), July 2010, Seoul, Korea, 2010.


Supaluck Amloy, Fredrik Karlsson, Per-Olof Holtz, Torwald Andersson and R Farivar
  Polarized Emission from Single GaN Quantum Dot Grown by Molecular Beam Epitaxy
  The 30th International Conference on the Physics of Semiconductors (ICPS30), July 2010, Seoul, Korea, 2010.


D.Y. Oberli, Fredrik Karlsson, M.A. Dupertuis, E. Pelucchi, A. Rudra, Per-Olof Holtz and E. Kapon
  Theory and detailed spectroscopy of high-symmetry quantum dots: Effects of symmetry elevation and breaking
  QD 2010 in Nottingham, 2010.


Daniel Dufåker, Fredrik Karlsson, Per-Olof Holtz, Bo Sernelius and E. Pelucchi
  Phonon Coupling of Exciton Complexes in Single InGaAs/AlGaAs Quantum Dots
  QD 2010 in Nottingham, 2010.


Linda Höglund, Fredrik Karlsson, Per-Olof Holtz, Qing Wang, S. Almqvist, C. Asplund, Hedda Malm, E Petrini, Mats erik Pistol, Jan Y Andersson and Håkan Petterson
  Quantum Dots-in-a-Well Infrared Photodetectors-Electronic Structure and Optical Properties
  INEC 2010 in Hong Kong, 2010.


K S Zhuravlev, I A Alexandrov and Per-Olof Holtz
  Linear polarized photoluminescence from GaN quantum dots imbedded in AlN matrix
  8th International Conference on Nitride Semiconductors (ICNS6), Nov 2009, Jeju, Korea, 2010.


Arvid Larsson, Mats Larsson, Per-Olof Holtz and E.S. Moskalenko
  Magnetic field enabled charge state control of single InAs/GaAs quantum dots
  2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009, 2009.


Linda Höglund, Per-Olof Holtz, C Asplund, Q Wang, S Almqvist, E Petrini, H Pettersson and J Y Andersson
  Tunability in the Detection Wavelength of a Quantum Dots-in-a-Well Infrared Photodetector
  IEEE Nano 2009 in Genua, 2009.


K S Zhuravlev, I A Alexandrov and Per-Olof Holtz
  Linearly polarized photoluminescence from GaN quantum dots embedded in AlN matrix
  International Conference on Physics, Chemistry and Applications of Nanostructures, 2009.


Per-Olf Holtz, E Moskalenko, Arvid Larsson, W Schoenfeld and P M Petroff
  Tuning of the charge state of a single InAs/GaAs quantum dot by an external field
  Taiwan-Sweden Workshop on Nano Science and Technology, 2009.


Arvid Larsson, E Moskalenko, Mats Larsson and Per-Olof Holtz
  Effective tuning of the charge state of a single InAs/GaAs quantum dot by means of external fields
  IEEE Nano 2009 in Genua, 2009.


Arvid Larsson, Daniel Dufåker, Fredrik Karlsson and Per-Olof Holtz
  Functionalisation of ZnO Nanoparticles Using Organic Acids
  Nordic Semiconductor Meeting, June 2009 , 2009.


Arvid Larsson, E Moskalenko, Mats Larsson and Per-Olof Holtz
  Tuning of the charge state of a single InAs/GaAs quantum dot by means of external fields
  Nordic Semiconductor Meeting, 2009.


Qingxiang Zhao, Li-Li Yang, Magnus Willander, Galia Pozina and Per-Olof Holtz
  Surface Recombination in ZnO Nanorods Grown by Aqueous Chemical Method
  PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors, 2009.


V F Agekyan, P O Holtz, G Karczewski, E S Moskalenko, A Yu, x Serov and N G Filosofov
  Exciton localization and sp-d energy transfer in CdMnTe/CdMgTe nanostructures with ultrathin narrow-gap magnetic layers
  17th Int. Symp. “Nanostructures: Physics and Technology”, 2009.


Linda Höglund, Per-Olof Holtz, C Asplund, Q Wang, S Almqvist, E Petrini, H Malm, H Pettersson and J Y Andersson
  Voltage Mediated Tuning of the Detection Wavelength in Quantum Dots-in-a-Well Infrared Photodetectors
  SPIE Conference,2008, 2008.


Linda Höglund, Per-Olof Holtz, C Asplund, Q Wang, S Almqvist, E Petrini, H Pettersson and J Y Andersson
  Tunability in the Detection Wavelength of a Quantum Dots-in-a-Well Infrared Photodetector
  Quantum dot meeting,2008, 2008.


P F Gomes, F Cerdeira, Mats Larsson, Anders Elfving, Göran Hansson, Wei-Xin Ni, Per-Olof Holtz, J R Madureira and A García-Cristóbal
  Large optical emission blue shift in Ge/Si quantum dots under external biaxial strain
  ICPS 29th International Conference on the Physics of Semiconductors,2008, 2008.


Linda Höglund, C Asplund, Q Wang, S Almqvist, H Malm, E Petrini, J Y Andersson, Per-Olof Holtz and H Pettersson
  Dual source optical pumping experiments revealing the origin of low temperature photocurrent peaks in Quantum Dots-in-a-Well Infrared Photodetectors
  ICPS 29th International Conference on the Physics of Semiconductors,2008, 2008.


K S Zhuravlev, V G Mansurov, A Yu, A Nikitin, Mats Larsson and Per-Olof Holtz
  Mobile and immobile photoluminescence bands from single hexagonal GaN quantum dots embedded in an AlN matrix
  ICPS 29th International Conference on the Physics of Semiconductors,2008, 2008.


Linda Höglund, Per-Olof Holtz, C Asplund, Q Wang, S Almqvist, E Petrini, H Malm, H Pettersson and J Y Andersson
  Tunability in the Detection Wavelength of a Quantum Dots-in-a-Well Infrared Photodetector
  he 5th International Conference on Semiconductor Quantum Dots,2008, 2008.


V Khranovskyy, I Tsiaoussis, Mikael Syväjärvi, Arvid Larsson, Per-Olof Holtz and Rositsa Yakimova
  Size tuning of uniformly oriented ZnO nanostructures
  Nanotech 2008,2008, 2008.


A.F. Moses, T.B. Hoang, D.L. Dheeraj, B.O. Fimland, Helge Weman, Fredrik Karlsson and Per-Olof Holtz
  Investigation of the structural and optical properties of single GaAs/GaAsSb/GaAs nanowire quantum dots
  17th International Laser Physics Workshop,2008, 2008.


A.F. Moses, D.L. Dheeraj, B.O. Fimland, Helge Weman, Fredrik Karlsson and Per-Olof Holtz
  Micro-photoluminescence study of heterostructured GaAs/AlGaAs and GaAs/GaAsSb nanowires grown by molecular beam epitaxy
  29th International Conference on the Physics of Semiconductors ICPS,2008, 2008.


Arvid Larsson, Evgeny Moskalenko, Mats Larsson and Per-Olof Holtz
  Tuning of the charge state of individual InAs/GaAs quantum dots by an external magnetic field
  The 5th International Conference on Semiconductor Quantum Dots QD2008,2008, 2008.


Arvid Larsson, Evgeny Moskalenko, Mats Larsson and Per-Olof Holtz
  Charge state tuning of individual InAs/GaAs quantum dots by an external magnetic field
  8th International Conference on Physics of Light-Matter Coupling in nanostructures PLMCN8,2008, 2008.


Evgeny Moskalenko, Arvid Larsson, Mats Larsson, Per-Olof Holtz, W.V. Schoenfeld and P.M. Petroff
  Effective tuning of the charge state of a single InAs/GaAs quantum dot by means of external fields
  One Day Quantum Dot Meeting,2008, 2008.


Per-Olof Holtz, Evgenii Moskalenko, Mats Larsson, Fredrik Karlsson, W.V. Schoenfeld and P.M. Petroff
  Effects of External Fields on the Excitonic Emission from Single InAs/GaAs Quantum Dots
  Microelectronics Journal, Vol. 39, 2008.


Arvid Larsson, Evgenii Moskalenko, Mats Larsson and Per-Olof Holtz
  Charge state control of single InAs/GaAs quantum dots by means of an external magnetic field
  in PHYSICS OF SEMICONDUCTORS, vol 1199, 2008.


Per-Olof Holtz, ES Moskalenko, Mats Larsson, Fredrik Karlsson, WV Schoenfeld and PM Petroff
  Enhanced Luminescence from Single InAs/GaAs Quantum Dots
  NSTI Nanotech, Nanostructured Materials Devices,2007, 2007.


Linda Höglund, C Asplund, Q Wang, S Almqvist, E Petrini, H Malm, J Borglind, S Smuk, JY Andersson, Per-Olof Holtz and H Pettersson
  Study of the performance and voltage mediated tuning of the detection wavelength in Quantum Dots-in-a-Well InfraredPhotodetectors
  The 6th International Conference on Low Dimensional Structures and Devices,2007, 2007.


KS Zhuravlev, VG Mansurov, A YU, A Nikitin, Mats Larsson and Per-Olof Holtz
  Power dependence of photoluminescence from single hexagonal GaN quantum dots formed in an AlN matrix
  NANO-2007 workshop,2007, 2007.


KS Zhuravlev, TS Shamirzaev, Mats Larsson and Per-Olof Holtz
  Photo-luminescence of single InAs quantum dots in an AlAs matrix
  NANO-2007 workshop,2007, 2007.


Linda Höglund, S Asplund, Q Wang, S Almqvist, E Petrini, H Malm, J Borglind, S Smuk, J Y Andersson, Per-Olof Holtz and H Pettersson
  Tuning of the detection wavelength in Quantum Dots-in-a-Well infrared photodetectors
  International Conference on Intersubband Transitions in Quantum Wells ITQW07,2007, 2007.


Per-Olof Holtz, Evgenii Moskalenko, Mats Larsson, Fredrik Karlsson, W.V. Schoenfeld and P.M. Petroff
  Enhancement of the Luminescence from Single InAs/GaAs Quantum Dots by Application of an Electric Field
  The Quantum Dot Meeting,2007, 2007.


Linda Höglund, C. Asplund, Q. Wang, S. Almqvist, E. Petrini, H. Malm, J. Borglind, S. Smuk, J. Andersson, Per-Olof Holtz and H. Pettersson
  Performance of Quantum Dots-in-a-Well Infrared Photodetectors: Status and prospects
  The Nanotech Northern Europe 2007,2007, 2007.


Per-Olof Holtz, Evgenii Moskalenko, Mats Larsson, Fredrik Karlsson, W.V. Schoenfeld and P.M. Petroff
  Enhancement of the Luminescence from Single InAs/GaAs Quantum Dots by Application of an Electric Field
  Nanotech Northern Europe 2007,2007, 2007.


Per-Olof Holtz, Evgenii Moskalenko, Mats Larsson, Fredrik Karlsson, W.V. Schoenfeld and P.M. Petroff
  Electric Field Induced Enhancement of the Luminescence from Single InAs/GaAs Quantum Dots
  The 7th Conference on the Physics of Light Matter Coupling in Nanostructures PLMCN7,2007, 2007.


Linda Höglund, C. Asplund, Q. Wang, S. Almqvist, E. Petrini, H. Malm, J. Borglind, S. Smuk, J.Y. Andersson, Per-Olof Holtz and H. Pettersson
  Study of the performance and voltage mediated tuning of the detection wavelength in Quantum Dots-in-a-Well Infrared Photodetectors
  The 6th International Conference on Low Dimensional Structures and Devices,2007, 2007.


Arvid Larsson, Evgenii Moskalenko, Mats Larsson and Per-Olof Holtz
  Tuning of the charge state of InAs/GaAs quantum dot by a magnetic field
  Nordic Semiconductor Meeting, NSM22,2007, 2007.


C-W. Hsu, A. Ganguly, C-P. Chen, Plamen Paskov, Per-Olof Holtz, K-H. Chen and L-C. Chen
  Luminescent Behaviors of GaN Nanowires with Different Surface Conditions: Toward Optical DNA Sensing
  International Conference on One-Dimensional Nanostructures ICON,2007, 2007.


P.F. Gomes, P.F. Gomes, F. Iikawa, F. Iikawa, F. Cerdeira, F. Cerdeira, Mats Larsson, Mats Larsson, Anders Elfving, Anders Elfving, Göran Hansson, Göran Hansson, Wei-Xin Ni, Wei-Xin Ni, Per-Olof Holtz and Per-Olof Holtz
  Size dependent spatial direct and indirect transitions in Ge/Si QDs
  The 6th International Conference on Low Dimensional Structures and Devices,2007, 2007.


Mats Larsson, Evgenii Moskalenko and Per-Olof Holtz
  Tuning the InAs/GaAs quantum dot charge state by pure optical means
  ICPS 28th International Conference on the Physics of Semiconductors,2006, 2006.


D.D. Ree, K.S. Zhuravlev, V.G. Mansurov, A.Yu. Nikitin, Plamen Paskov and Per-Olof Holtz
  Microphotoluminescence study of single and multilayered structure with GaN/AlN quantum dots
  ICPS 28th International Conference on the Physics of Semiconductors,2006, 2006.


Per-Olof Holtz, Evgenii Moskalenko, Mats Larsson, Fredrik Karlsson, W.V. Schoenfeld and P.M. Petroff
  Enhanced Luminescence from Self-Assembled Quantum Dots
  The International Conference on Nanoscience and Technology ICNT 2006,2006, 2006.


Per-Olof Holtz, Evgenii Moskalenko, Mats Larsson, Fredrik Karlsson, W.V. Schoenfeld and P.M. Petroff
  Enhanced Luminescence from Self-Assembled Quantum Dots
  14th Interenational School on Condensed Matter Physics,2006, 2006.


Mats Larsson, Evgenii Moskalenko and Per-Olof Holtz
  Single dot spectroscopy investigations of carrier transport and capture into InAs/GaAs quantum dots
  ICPS 28th International Conference on the Physics of Semiconductors,2006, 2006.


Linda Höglund, C. Asplund, H. Pettersson, J.Y. Andersson and Per-Olof Holtz
  On the Origin of the Photoconductivity in Lateral Quantum Dots-in-a-Well Infrared Photodetectors
  ICPS 28th International Conference on the Physics of Semiconductors,2006, 2006.


Mats Larsson, Evgenii Moskalenko and Per-Olof Holtz
  Modified carriers transport and capture into InAs/GaAs quantum dots due to an applied magnetic field
  ICPS 28th International Conference on the Physics of Semiconductors,2006, 2006.


Per-Olof Holtz, Evgenii Moskalenko, Mats Larsson, Fredrik Karlsson, W.V. Schoenfeld and P.M. Petroff
  Optical Properties of Self-Assembled Quantum Dots
  Scientific INTAS-SB RAS Workshop,2006, 2006.


Hamid Harati Zadeh, Bo Monemar, Plamen Paskov, Per-Olof Holtz, Peder Bergman, H. Amano and I. Akasaki
  Optical Studies of Wide Band Gap III-Nitride Semiconductor Quantum Wells and Superlattices
  European Materials Research Society E-MRS fall meeting 2006,2006, 2006.


Evgeni Moskalenko, K.F. Karlsson, Per-Olof Holtz, Bo Monemar, V. Donchev, W.V. Schoenfeld, J.M. Garcia and P.M. Petroff
  Formation of the negatively charged exciton complexes in InAs quantum dots
  Seminar Excitons and Exciton Condensates in Confined Semiconductor Systems,2006, 2006.


Linda Höglund, Per-Olof Holtz, L. Ouattara, C. Asplund, Q. Wang, S. Almqvist, E. Petrini, H. Malm, J. Borglind, S. Smuk, A. Mikkelsen, E. Lundgren, H. Pettersson and J.Y. Andersson
  Quantum dots-in-a-well infrared photodetectors for long wavelength infrared detection
  Optical Materials in Defence Systems Technology III,2006, 2006.


Per-Olof Holtz, Evgeni Moskalenko, Mats Larsson, K.F. Karlsson, W.V. Schoenfeld and P.M. Petroff
  Enhanced Luminescence from InAs/GaAs Quantum Dots
  Optical Materials in Defence Systems Technology III,2006, 2006.


Evgenii Moskalenko, Fredrik Karlsson, Per-Olof Holtz, W.V. Schoenfeld and P.M. Petroff
  The role of an external electric field for the carrier transport and capture into InAs/GaAs quantum dots
  The 23rd International Conference on Defects in Semiconductors,2005, 2005.


Mats Larsson, Anders Elfving, Per-Olof Holtz, Wei-Xin Ni and Göran Hansson
  Band alignment studies of self-organized Ge/Si quantum dots based on luminescence characterization
  The 23rd International Conference on Defects in Semiconductors,2005, 2005.


Mats Larsson, Anders Elfving, Per-Olof Holtz, Wei-Xin Ni and Göran Hansson
  Band alignment studies of self-organized Ge/Si quantum dots based on luminescence characterization
  The 9th Conference on Optics and Excitons in Confined Systems,2005, 2005.


Mats Larsson, Anders Elfving, Per-Olof Holtz, Göran Hansson and Wei-Xin Ni
  Asymmetric band alignment at Si/Ge quantum dots studied by luminescence from p-i-n and n-i-p structures
  ICPS2004,2004, 2005.


Evgeny Moskalenko, Fredrik Karlsson, V. Donchev, Per-Olof Holtz, Bo Monemar, W.V. Schoenfeld and P.M. Petroff
  The considerable changes induced by an additional infrared laser on the luminescence intensity from InAs/GaAs quantum dots
  27th International Conference on the Physics of Semiconductors ICPS-27,2004, 2004.


Evgenii Moskalenko, Fredrik Karlsson, V. Donchev, Per-Olof Holtz, W.V. Schoenfeld and M. Petroff
  The quenching effect of the light emission from individual InAs quantum dots initiated by an additional infra-red laser
  The Repino 2004 Conference,2004, 2004.


Mats Larsson, Anders Elfving, M.I. Hussain, Per-Olof Holtz and Wei-Xin Ni
  Luminescence Properties of Ge Quantum Dots Produced by MBE at Different Temperatures
  Proc. of IEEE/LEOS 1st International Conference on Group IV Photonics,2004, 2004.


Plamen Paskov, Tanja Paskova, Per-Olof Holtz and Bo Monemar
  Polarisation dependent spectroscopy of the near bandgap emission in free-standing GaN
  2003 MRS Fall Meeting,2003, 2004.


Fredrik Karlsson, Per-Olof Holtz, Evgeny Moskalenko, Bo Monemar, W.V. Schoenfeld, J.M. Garcia and P.M. Petroff
  The quantum dot as a sensitive probe for impurities in its vicinity
  11th International Conference on Modulated Semiconductor Structures MSS-11,2003, 2003.


Fredrik Karlsson, Per-Olof Holtz, Evgeny Moskalenko, Bo Monemar, W.V. Schoenfeld, J.M. Garcia and P.M. Petroff
  Step-like dependence of the exciton charge-state on the excitation energy in single In(Ga)As/GaAs quantum dots
  ICPS,2003, 2003.


Wei-Xin Ni, Anders Elfving, Mats Larsson, Göran Hansson and Per-Olof Holtz
  Si-based Photonic Transistor Devices for Integrated Optoelectronics
  The 3rd International Conference on SiGe Epitaxy and Heterostructures,2003, 2003.


Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Photoluminescence study of Si doped GaN/AlGaN multi quantum wells
  ICPS 2002,2002, 2003.


Anders Elfving, Mats Larsson, Per-Olof Holtz, Göran V. Hansson and Wei-Xin Ni
  Efficient near infrared Si/Ge quantum dot photodetector based on a heterojunction bipolar transistor
  Material Research Society Symposium Proceedings, 2003.


Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Photoluminescence study of Si doped GaN/GaN/Al0.07Ga0.93N multi quantum wells
  NANO-7/ECOSS-21,2002, 2002.


Fredrik Karlsson, Per-Olof Holtz, Evgenii Moskalenko, Bo Monemar, W.V. Schoenfeld, J.M. Garcia and P.M. Petroff
  Quantum dots as a sensitive tool to monitor charge
  14th Indium Phosphide and Related Materials Conference IPRM 2002,2002, 2002.


Per-Olof Holtz
  Optical Processes in Quantum Dots
  Workshop on Nano Science and Technology,2002, 2002.


Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  The influence of Si-donor doping on the exciton localization in modulation- doped GaN/AlGaN multi quantum wells
  14th Indium Phosphide and Related Materials Conference IPRM 2002,2002, 2002.


Fredrik Karlsson, Evgeny Moskalenko, Per-Olof Holtz, Bo Monemar, W.V. Schoenfeld, J.M. Garcia and P.M. Petroff
  Carrier diffusion in the barrier enabling formation of charged excitons in InAs/GaAs quantum dots
  XXX International School on the Physics of Semiconducting Compounds,2001, 2001.


 Web of Science® Times Cited: 2

Evgenii Moskalenko, Fredrik Karlsson, Per-Olof Holtz, Bo Monemar, W.V. Schoenfeld, J.M. Garcia and P.M. Petroff
  The formation of the charged exciton complexes in self-assembled InAs single quantum dots
  The 9th International Symposium on Nanostructures,2001, 2001.


Plamen Paskov, Per-Olof Holtz, Bo Monemar, J.M. Garcia, W.V. Schoenfeld and P.M. Petroff
  Optical up-conversion processes in InAs quantum dots
  the 25th International Conference on the Physics of Semiconductors ICPS-25,2000, 2000.


Peder Bergman, Galia Pozina, Bo Monemar, J. Dalfors, Bo Sernelius, Per-Olof Holtz, H. Amano and I. Akasaki
  Radiative recombination in InGaN/GaN multiple quantum well
  ICSCRM 99,1999, 2000.


Ph.D. Theses

Daniel Dufåker
  Few particle effects in pyramidal quantum dots - a spectroscopic study
  2013.


  Fulltext PDF

Supaluck Amloy
  Polarization-resolved photoluminescence spectroscopy of III-nitride quantum dots
  2013.


  Fulltext PDF

Anders Lundskog
  Controlled growth of hexagonal GaN pyramids and InGaN QDs
  2012.


  Fulltext PDF

Bouchaib Adnane
  Optical characterization of Silicon-based self-assembled nanostructures
  2010.


Linda Höglund
  Growth and characterisation of InGaAs-based quantum dots-in-a-well infrared photodetectors
  2008.


  Fulltext PDF

Licentiate Theses

Daniel Dufåker
  Spectroscopy studies of few particle effects in pyramidal quantum dots
  2011.


  Fulltext PDF

Linda Höglund
  InGaAs-based quantum dots for infrared imaging applications: growth and characterisation
  2007.


* Social media data based on publications from 2011 to present and with a DOI; data delivered by Altmetric.com.