Publications for Peder Bergman
Co-author map based on ISI articles 2007-

Publications mentioned in social media 1 times*

Keywords

temperature substrates spectra sic roughness pl photoluminescence lifetime k gan excitons exciton ev epitaxial epilayers doping defects decay carrier 4h-sic

Journal Articles

Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, Sergey Khromov, V. N. Izyumskaya, V. Avrutin, X. Li, H. Morkoc, H. Amano, M. Iwaya and I. Akasaki
  Properties of the main Mg-related acceptors in GaN from optical and structural studies
  Journal of Applied Physics, 2014, 115(5), 053507.
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 Web of Science® Times Cited: 1

Ian Don Booker, Jawad Ul Hassan, Louise Lilja, Franziska Beyer, Robin Karhu, J. Peder Bergman, Orjan Danielsson, Olof Kordina, Einar Sveinbjörnsson and Erik Janzén
  Carrier Lifetime Controlling Defects Z(1/2) and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC
 
Altmetric usage: 1

  Crystal Growth & Design, 2014, 14(8), 4104-4110.
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A. A. Toropov, E. A. Shevchenko, T. V. Shubina, V. N. Jmerik, D. V. Nechaev, M. A. Yagovkina, A. A. Sitnikova, S. V. Ivanov, Galia Pozina, J. P. Bergman and Bo Monemar
  Suppression of the quantum-confined Stark effect in AlxGa1-xN/AlyGa1-yN corrugated quantum wells
  Journal of Applied Physics, 2013, 114(12), .
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Louise Lilja, Ian Don Booker, Jawad ul-Hassan, Erik Janzén and Peder Bergman
  The influence of growth conditions on carrier lifetime in 4H-SiC epilayers
  Journal of Crystal Growth, 2013, 381, 43-50.

Bo Monemar, Sergey Khromov, Galia Pozina, Plamen Paskov, Peder Bergman, Carl Hemmingsson, Lars Hultman, Hiroshi Amano, Vitaliy Avrutin, Xing Li and Hadis Morkoc
  Luminescence of Acceptors in Mg-Doped GaN
  Japanese Journal of Applied Physics, 2013, 52(8), .
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 Web of Science® Times Cited: 3

Louise Lilja, Jawad ul-Hassan, Ian Booker, Peder Bergman and Erik Janzén
  Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers
  Materials Science Forum, 2013, 740-742, 637-640.
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 Web of Science® Times Cited: 1

Martin Fagerlind, Ian Don Booker, Peder Bergman, Erik Janzén, Herbert Zirath and Niklas Rorsman
  Influence of Large-Aspect-Ratio Surface Roughness on Electrical Characteristics of AlGaN/AlN/GaN HFETs
  IEEE transactions on device and materials reliability, 2012, 12(3), 538-546.
 Web of Science® Times Cited: 1

J. W. Sun, Volodymyr Khranovskyy, M. Mexis, Martin Eriksson, Mikael Syväjärvi, I. Tsiaoussis, Gholamreza Yazdi, H. Peyre, S. Juillaguet, J. Camassel, Per-Olof Holtz, Peder Bergman, Lars Hultman and Rositsa Yakimova
  Comparative micro-photoluminescence investigation of ZnO hexagonal nanopillars and the seeding layer grown on 4H-SiC
  Journal of Luminescence, 2012, 132(1), 122-127.

T. V. Shubina, A. .A. Toropov, Galia Pozina, Peder Bergman, M. M. Glazov, N. A. Gippius, P. Disseix, J. Leymarie, B. Gil and Bo Monemar
  Excitonic parameters of GaN studied by time-of-flight spectroscopy
  Applied Physics Letters, 2011, 99(10), 101108.
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 Web of Science® Times Cited: 3

Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, David Lindgren, Lars Samuelson, Xianfeng Ni, Hadis Morkoc, Tanya Paskova, Zhaoxia Bi and Jonas Ohlsson
  Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates
  PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208(7), 1532-1534.
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 Web of Science® Times Cited: 2

T V Shubina, M M Glazov, N A Gippius, A A Toropov, D Lagarde, P Disseix, J Leymarie, B Gil, Galia Pozina, J Peder Bergman and Bo Monemar
  Delay and distortion of slow light pulses by excitons in ZnO
  Physical Review B. Condensed Matter and Materials Physics, 2011, 84(7), 075202.
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 Web of Science® Times Cited: 4

Xuanjun Zhang, Mohamed Ballem, Zhang-Jun Hu, J Peder Bergman and Kajsa Uvdal
  Nanoscale Light-Harvesting Metal-Organic Frameworks
  Angewandte Chemie International Edition, 2011, 50(25), 5728-5732.
 Web of Science® Times Cited: 48

Patrik Scajev, Jawad Hassan, Kestutis Jarasiunas, Masashi Kato, Anne Henry and J Peder Bergman
  Comparative Studies of Carrier Dynamics in 3C-SiC Layers Grown on Si and 4H-SiC Substrates
  JOURNAL OF ELECTRONIC MATERIALS, 2011, 40(4), 394-399.
 Web of Science® Times Cited: 8

Bo Monemar, Plamen Paskov, Peder Bergman, Galia Pozina, A.A. Toropov, T.V. Shubina, T. Malinauskas and A. Usui
  Transient photoluminescence of shallow donor bound excitons in GaN
  Physical Review B. Condensed Matter and Materials Physics, 2010, 82, 235202.
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 Web of Science® Times Cited: 18

Xuanjun Zhang, Mohamed Ali Ballem, Maria Ahrén, Anke Suska, Peder Bergman and Kajsa Uvdal
  Nanoscale Ln(III)-carboxylate coordination polymers (Ln = Gd, Eu, Yb): temperature-controlled guest encapsulation and light harvesting
  Journal of the American Chemical Society, 2010, 132(30), 10391-10397.
 Web of Science® Times Cited: 45

Jawad ul-Hassan, Anne Henry, P. J. McNally and J. Peder Bergman
  Characterization of the Carrot Defect in 4H-SiC Epitaxial Layers
  Journal of Crystal Growth, 2010, 313, 1828-1837.
 Web of Science® Times Cited: 12

P Brosselard, A Perez-Tomas, Jawad ul-Hassan, N Camara, X Jorda, M Vellvehi, P Godignon, J Millan and Peder Bergman
  Low loss, large area 4.5 kV 4H-SiC PIN diodes with reduced forward voltage drift
  SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24(9), 095004.
 Web of Science® Times Cited: 4

Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, T Kawashima, H Amano, I Akasaki, T Paskova, S Figge, D Hommel and A Usui
  Evidence for Two Mg Related Acceptors in GaN
  PHYSICAL REVIEW LETTERS, 2009, 102(23), 235501.
 Web of Science® Times Cited: 34

Jawad ul-Hassan, Anne Henry, Ivan Gueorguiev Ivanov and J. Peder Bergman
  In-grown stacking faults in 4H-SiC epilayer grown on off-cut substrates
  Journal of Applied Physics, 2009, 105(12), 123513.
 Web of Science® Times Cited: 17

Jawad ul-Hassan and J. Peder Bergman
  Influence of Structural Defects on Minority Carrier Lifetime in 4H-SiC Epitaxial Layers: Optical Lifetime Mapping
  Journal of Applied Physics, 2009, 105(12), .
 Web of Science® Times Cited: 18

Peter Klason, Thomas Moe Borseth, Qing X Zhao, Bengt G Svensson, Andrej Yu Kuznetsov, Peder Bergman and Magnus Willander
  Temperature dependence and decay times of zinc and oxygen vacancy related photoluminescence bands in zinc oxide
  Solid State Communications, 2008, 145(5-6), 321-326.
 Web of Science® Times Cited: 70

Bo Monemar, Plamen Paskov, Peder Bergman, A.A. Toropov, T.V. Shubina and A. Usui
  Recombination dynamics of free and bound excitons in bulk GaN
  Superlattices and Microstructures, 2008, 43(5-6), 610-614.
 Web of Science® Times Cited: 1

Galia Pozina, Carl Hemmingsson, Peder Bergman, David Trinh, Lars Hultman and Bo Monemar
  Time-resolved spectroscopy of freestanding GaN layers grown by halide vapour phase epitaxy
  Superlattices and Microstructures, 2008, 43(5-6), 605-609.
 Web of Science® Times Cited: 4

A. Lankinen, T. Lang, S. Suihkonen, O. Svensk, A. Saynatjoki, T. O. Tuomi, P. J. McNally, M. Odnoblyudov, V. Bougrov, A. N. Danilewsky, Peder Bergman and R. Simon
  Dislocations at the interface between sapphire and GaN
  Journal of materials science. Materials in electronics, 2008, 19(2), 143-148.
 Web of Science® Times Cited: 1

Tatiana Shubina, M. M. Glazov, A. A. Toropov, N. A. Gippius, A. Vasson, J. Leymarie, A. Kavokin, A. Usui, Peder Bergman, Galia Pozina and Bo Monemar
  Resonant light delay in GaN with ballistic and diffusive propagation
  Physical Review Letters, 2008, 100(8), .
 Web of Science® Times Cited: 12

Bo Monemar, Plamen Paskov, Peder Bergman, A.A. Toropov, T.V. Shubina, T. Malinauskas and A. Usui
  Recombination of free and bound excitons in GaN
  Physica status solidi. B, Basic research, 2008, 245(9), 1723-1740.
 Web of Science® Times Cited: 36

A.A. Toropov, Yu. E. Kitaev, Tatiana Shubina, Plamen Paskov, Peder Bergman and Bo Monemar
  Polarization-resolved phonon-assisted optical transitions of bound excitons in wurtzite GaN
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 Web of Science® Times Cited: 6

A Perez-Tomas, P Brosselard, Jawad ul-Hassan, X Jorda, P Godignon, M Placidi, A Constant, J Millan and Peder Bergman
  Schottky versus bipolar 3.3 kV SiC diodes
  SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23(12), 125004.
 Web of Science® Times Cited: 8

Jawad ul-Hassan, J. Peder Bergman, Anne Henry and Erik Janzén
  On-axis homoepitaxial growth on Si-face 4H–SiC substrates
  Journal of Crystal Growth, 2008, 310(20), 4424-4429.
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 Web of Science® Times Cited: 28

Jawad ul-Hassan, J. Peder Bergman, Anne Henry and Erik Janzén
  In-situ surface preparation of nominally on-axis 4H-SiC substrates
  Journal of Crystal Growth, 2008, 310(20), 4430-4437.
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 Web of Science® Times Cited: 20

Galia Pozina, Carl Hemmingsson, Plamen P. Paskov, Peder Bergman, Bo Monemar, T. Kawashima, H. Amano, I. Akasaki and A. Usui
  Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates
  Applied Physics Letters, 2008, 92(15), 151904.
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 Web of Science® Times Cited: 7

Bo Monemar, Plamen Paskov, Peder Bergman, A.A. Toropov and T.V. Shubina
  Recent developments in the III-nitride materials
  Physica status solidi. B, Basic research, 2007, 244(6), 1759-1768.
 Web of Science® Times Cited: 21

Bo Monemar, Plamen Paskov, Peder Bergman, S. Keller, S. P. DenBaars and U. K. Mishra
  Effect of an (Al,In)N insertion layer on the radiative emission properties of (In,Ga)N/GaN multiple quantum well structures
  Physica status solidi. A, Applied research, 2007, 204(1), 304-308.
 Web of Science® Times Cited: 1

Tatiana Shubina, A.A. Toropov, O.G. Lublinskaya, P.S. Kopev, S.V. Ivanov, A. El-Shaer, M. Al-Suleiman, A. Bakin, A. Waag, A. Voinilovich, E.V. Lutsenko, G.P. Yablonskii, Peder Bergman, Galia Pozina and Bo Monemar
  Recombination dynamics and lasing in ZnO/ZnMgO single quantum well structures
  Applied Physics Letters, 2007, 91(20), .
 Web of Science® Times Cited: 17

Galia Pozina, Plamen Paskov, Peder Bergman, Carl Hemmingsson, Lars Hultman, Bo Monemar, H. Amano and A. Usui
  Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates
  Applied Physics Letters, 2007, 91(22), .
 Web of Science® Times Cited: 12

Irina Buyanova, Peder Bergman, Galia Pozina, Weimin Chen, S. Rawal, D.P. Norton, S.J. Pearton, A. Osinsky and J.W. Dong
  Mechanism for radiative recombination in ZnCdO alloys
  Applied Physics Letters, 2007, 90(26), .
 Web of Science® Times Cited: 19

Galia Pozina, Carl Hemmingsson, Peder Bergman, David Trinh, Lars Hultman and Bo Monemar
  Dynamics of bound excitons versus thickness in freestanding GaN wafers grown by halide vapor phase epitaxy
  Applied Physics Letters, 2007, 90(22), .
 Web of Science® Times Cited: 8

M. Esmaeili, Hamid Harati Zadeh, Bo Monemar, Plamen Paskov, Per-Olof Holtz, Peder Bergman, M. Iwaya, S. Kamiyama, H. Amano and I Akasaki
  Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: Influence of Al composition and Si doping
  Nanotechnology, 2007, 18(2), .
 Web of Science® Times Cited: 7

A.A. Toropov, I.V. Sedova, S.V. Sorokin, Ya.V. Terent'ev, E.L. Ivchenko, D.N. Lykov, S.V. Ivanov, Peder Bergman and Bo Monemar
  III-V/II-VI heterovalent double quantum wells
  Physica status solidi. B, Basic research, 2006, 243(4), 819-826.
 Web of Science® Times Cited: 6

Morteza Izadifard, Peder Bergman, Weimin Chen, Irina A. Buyanova, Y.G. Hong and C.W. Tu
  Photoluminescence upconversion in GaInNP/GaAs heterostructures grown by gas source molecular beam epitaxy
  Journal of Applied Physics, 2006, 99(7), 073515.
 Web of Science® Times Cited: 8

Bo Monemar, Plamen Paskov, Peder Bergman, Tanja Paskova, Carl Hemmingsson, T Malinauskas, K Jarasiunas, P Gibart and B Beaumont
  Time-resolved spectroscopy of excitons bound at shallow neutral donors in HVPE GaN
  Physica. B, Condensed matter, 2006, 376, 482-485.
 Web of Science® Times Cited: 5

Plamen Paskov, R Schifano, Tanja Paskova, T Malinauskas, Peder Bergman, Bo Monemar, S Figge and D Hommel
  Structural defect-related emissions in nonpolar a-plane GaN
  Physica. B, Condensed matter, 2006, 376, 473-476.
 Web of Science® Times Cited: 26

Bo Monemar, Plamen Paskov, Peder Bergman, M Iwaya, S Kamiyama, H Amano and I Akasaki
  A hydrogen-related shallow donor in GaN?
  Physica. B, Condensed matter, 2006, 376, 460-463.
 Web of Science® Times Cited: 8

Bo Monemar, Plamen Paskov, Peder Bergman, Tanja Paskova, S Figge, J Dennemarck and D Hommel
  The dominant shallow 0.225 eV acceptor in GaN
  Physica status solidi. B, Basic research, 2006, 243(7), 1604-1608.
 Web of Science® Times Cited: 15

Qingxiang Zhao, P. Klason, Magnus Willander, Peder Bergman, W. L. Jiang and J. H. Yang
  Synthesis and characterization of ZnO nanostructures grown on Si substrates
  Physica Scripta, 2006, T126, 131-134.
 Web of Science® Times Cited: 11

K. Neimontas, T. Malinauskas, R. Aleksiejunas, M. Sudzius, K. Jarasiunas, Peder Bergman and Erik Janzén
  The determination of high-density carrier plasma parameters in epitaxial layers, semi-insulating and heavily doped crystals of 4H-SiC by a picosecond four-wave mixing technique
  Semiconductor Science and Technology, 2006, 21(7), 952-958.
 Web of Science® Times Cited: 19

Bo Monemar, Plamen Paskov, Peder Bergman, A.A. Toropov, T.V. Shubina, S. Figge, T. Paskova, D. Hommel, A. Usui, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
  Optical signatures of dopants in GaN
  Materials Science in Semiconductor Processing, 2006, 9( 1-3), 168-174.
 Web of Science® Times Cited: 6

Plamen Paskov, R. Schifano, T. Malinauskas, T. Paskova, Peder Bergman, Bo Monemar, S. Figge, D. Hommel, B.A. Haskell, P.T. Fini, J.S. Speck and S. Nakamura
  Photoluminescence of a -plane GaN: comparison between MOCVD and HVPE grown layers
  Physica Status Solidi. C, Current topics in solid state physics, 2006, 6, 1499-1502.

A.A. Toropov, I.V. Sedova, O.G. Lyublinskaya, S.V. Sorokin, A.A. Sitnikova, S.V. Ivanov, Peder Bergman, Bo Monemar, F. Donatini and Le Si Dang
  Coexistence of type-I and type-II band lineups in Cd(Te,Se)/ZnSe quantum-dot structures
  Applied Physics Letters, 2006, 89(12), .
 Web of Science® Times Cited: 5

A.A. Toropov, Ya.V. Terent'ev, S.V. Sorokin, S.V. Ivanov, T. Koyama, K. Nishibayashi, A. Murayama, Y. Oka, Peder Bergman, Irina Buyanova, Weimin Chen and Bo Monemar
  Density-dependent dynamics of exciton magnetic polarons in ZnMnSe/ZnSSe type-II quantum wells
  Physical Review B. Condensed Matter and Materials Physics, 2006, 73(24), 245335.

Morteza Izadifard, Peder Bergman, Weimin Chen, Irina Buyanova, Y.G. Hong and C.W. Tu
  Radiative recombination of GaInNP alloys lattice matched to GaAs
  Applied Physics Letters, 2006, 88(1), 011919.
 Web of Science® Times Cited: 9

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, Anne Henry, Ivan Gueorguiev Ivanov, Peder Bergman, Bo Monemar, S. Chichibu and T. Onuma
  Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC
  Journal of Applied Physics, 2006, 99(9), .
 Web of Science® Times Cited: 35

Anne Henry, Jawad ul-Hassan, Peder Bergman, Christer Hallin and Erik Janzén
  Thick Silicon Carbide Homoepitaxial Layers Grown by CVD Techniques
  Chemical Vapor Deposition, 2006, 12(8-9), 475-482.
 Web of Science® Times Cited: 51

SY Ha and Peder Bergman
  Degradation of SiC high-voltage pin diodes
  MRS bulletin, 2005, 30(4), 305-307.
 Web of Science® Times Cited: 10

TJ Ochalski, A Grzegorczyk, M Rudzinski, PK Larsen, Per-Olof Holtz, Peder Bergman and Plamen Paskov
  Optical study of AlGaN/GaN based HEMT structures grown on sapphire and SiC
  Physica status solidi. A, Applied research, 2005, 202(7), 1300-1307.
 Web of Science® Times Cited: 3

T.J. Ochalski, A. Grzegorczyk, M. Rudzinski, P.K. Larsen, E. Kowalczyk, Per-Olof Holtz, Peder Bergman and Plamen Paskov
  Optical study of AlGaN/GaN based HEMT structures
  Physica Status Solidi. C, Current topics in solid state physics, 2005, 2, 2791-2794.

Plamen Paskov, Peder Bergman, Vanya Darakchieva, Tanja Paskova, Bo Monemar, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
  Photoluminescence of GaN/AlN superlattices grown by MOCVD
  Physica Status Solidi. C, Current topics in solid state physics, 2005, 2, 2345-2348.

Plamen Paskov, Peder Bergman, Bo Monemar, S. Keller, S.P. DenBaars and U.K. Mishra
  Spatially direct and indirect transitions in InGaN/GaN structures with coupled quantum wells
  Physica Status Solidi. C, Current topics in solid state physics, 2005, 2, 2337-2340.

A.A. Toropov, O.V. Nekrutina, Tatiana Shubina, S.V. Ivanov, Th. Gruber, R. Kling, F. Reuss, C. Kirchner, A. Waag, Fredrik Karlsson, Peder Bergman and Bo Monemar
  Excitonic Properties of ZnO Films and Nanorods
  AIP Conference Proceedings, 2005, 772, 991-992.

Morteza Izadifard, Irina Buyanova, Peder Bergman, Weimin Chen, A. Utsumi, Y. Furukawa, A. Wakahara and H. Yonezu
  Effects of rapid thermal annealing on optical properties of GaNxP1−x alloys grown by solid source molecular beam epitaxy
  Semiconductor Science and Technology, 2005, 20(5), 353-356.
 Web of Science® Times Cited: 4

Liutauras Storasta, F. H. C. Carlsson, Peder Bergman and Erik Janzén
  Observation of recombination enhanced defect annealing in 4H-SiC
  Applied Physics Letters, 2005, 86(9), 91903.
 Web of Science® Times Cited: 11

M Godlewski, H Przybylinska, R Bozek, EM Goldys, Peder Bergman, Bo Monemar, I Grzegory and S Porowski
  Compensation mechanisms in magnesium doped GaN
  Physica status solidi. A, Applied research, 2004, 201(2), 216-220.
 Web of Science® Times Cited: 1

Bo Monemar, Plamen Paskov, H Haradizadeh, Peder Bergman, E Valcheva, Vanya Darakchieva, B Arnaudov, Tanja Paskova, Per-Olof Holtz, Galia Pozina, S Kamiyama, M Iwaya, H Amano and I Akasaki
  Optical investigation of AlGaN/GaN quantum wells and superlattices
  Physica status solidi. A, Applied research, 2004, 201(10), 2251-2258.

M Godlewski, S Yatsunenko, A Khachapuridze, VY Ivanov, Z Golacki, G Karczewski, Peder Bergman, P Klar, W Heimbrodt and MR Phillips
  Mechanism of intra-shell recombination of transition metal and rare earth ions in nanostructures of II-VI compounds
  Journal of Alloys and Compounds, 2004, 380(01-Feb), 45-49.
 Web of Science® Times Cited: 15

Irina Buyanova, Peder Bergman, Weimin Chen, G. Thaler, R. Frazier, C. R. Abernathy, S. J. Pearton, J. Kim, F. Ren, F. V. Kyrychenko, C. J. Stanton, C.-C. Pan, G.-T. Chen, J.-I. Chyi and J. M. Zavada
  Optical study of spin injection dynamics in InGaN/GaN quantum wells with GaMnN injection layers
  Journal of Vacuum Science & Technology B, 2004, 22(6), 2668-2672.
 Web of Science® Times Cited: 12

Morteza Izadifard, Peder Bergman, Igor Vorona, Weimin Chen, Irina Buyanova, A. Utsumi, Y. Furukawa, S. Moon, A. Wakahara and H. Yonezu
  Evaluation of optical quality and defect properties of GaNxP1−x alloys lattice matched to Si
  Applied Physics Letters, 2004, 85, 6347.
 Web of Science® Times Cited: 6

Hamid Harati Zadeh, Bo Monemar, Plamen Paskov, Peder Bergman, Bo Sernelius, Per-Olof Holtz, M Iwaya, S Kamiyama, H Amano and I Akasaki
  Photoluminescence study of Si-doped GaN/Al0.07Ga0.93N multiple quantum wells with different dopant position
  Applied Physics Letters, 2004, 84(25), 5071-5073.
 Web of Science® Times Cited: 10

H. Jacobson, Peder Bergman, Christer Hallin, Erik Janzén, T Tuomi and H Lendenmann
  Properties and origins of different stacking faults that cause degradation in SiC PiN diodes
  Journal of Applied Physics, 2004, 95(3), 1485-1488.
 Web of Science® Times Cited: 49

Tatiana Shubina, AA Toropov, VN Jmerik, MG Tkachman, Alexander Lebedev, VV Ratnikov, AA Sitnikova, VA Vekshin, SV Ivanov, PS Kop'ev, P Bigenwald, Peder Bergman, Per-Olof Holtz and Bo Monemar
  Intrinsic electric fields in N-polarity GaN/AlxGa1-xN quantum wells with inversion domains
  Physical Review B. Condensed Matter and Materials Physics, 2003, 67(19), .
 Web of Science® Times Cited: 7

Tatiana Shubina, V.N. Jmerik, M.G. Tkachman, V.A. Vekshin, A.A. Toropov, S.V. Ivanov, P.S. Kop'ev, Peder Bergman, Fredrik Karlsson, Per-Olof Holtz and Bo Monemar
  Optical properties of GaN/AlGaN quantum wells with inversion domains
  Physica status solidi. A, Applied research, 2003, 195(3), 537-542.
 Web of Science® Times Cited: 1

J. Zhang, Liutauras Storasta, Peder Bergman, Tien Son Nguyen and Erik Janzén
  Electrically active defects in n-type 4H-silicon carbide grown in a vertical hot-wall reactor
  Journal of Applied Physics, 2003, 93(8), 4708-4714.
 Web of Science® Times Cited: 102

Bo Monemar, Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Peder Bergman, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum well structures
  Physica status solidi. B, Basic research, 2003, 237(1), 353-364.
 Web of Science® Times Cited: 22

Bo Monemar, Plamen Paskov, H. Haratizadeh, Per-Olof Holtz, Peder Bergman, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Photoluminescence of InGaN/GaN and AlGaN/GaN multiple quantum well structures: Role of depletion fields and polarization fields
  Physica status solidi. A, Applied research, 2003, 195(3), 523-527.
 Web of Science® Times Cited: 5

Tatiana Shubina, VN Jmerik, MG Tkachman, VA Vekshin, VV Ratnikov, AA Toropov, AA Sitnikova, SV Ivanov, Peder Bergman, Fredrik Karlsson, Per-Olof Holtz and Bo Monemar
  Nanometric-scale fluctuations of intrinsic electric fields in GaN/AlGaN quantum wells with inversion domains
  Physica status solidi. B, Basic research, 2002, 234(3), 919-923.
 Web of Science® Times Cited: 4

A. Hallen, M.S. Janson, A.Yu. Kuznetsov, D. Aberg, M.K. Linnarsson, B.G. Svensson, Per Persson, Fredrik Carlsson, Liutauras Storasta, Peder Bergman, S.G Sridhara and Y. Zhang
  Ion implantation of silicon carbide
  Nuclear Instruments and Methods in Physics Reseach B, 2002, 186(1-4), 186-194.
 Web of Science® Times Cited: 37

H. Jacobson, Jens Birch, Rositsa Yakimova, Mikael Syväjärvi, Peder Bergman, A. Ellison, T. Tuomi and Erik Janzén
  Dislocation-evolution in 4H-SiC epitaxial layers
  Journal of Applied Physics, 2002, 91(10 I), 6354.
 Web of Science® Times Cited: 55

Per Persson, Lars Hultman, H. Jacobson, Peder Bergman, Erik Janzén, J.M. Molina-Aldareguia, W.J. Clegg and T. Tuomi
  Structural defects in electrically degraded 4H-SiC p+/n-/n+ diodes
  Applied Physics Letters, 2002, 80(25), 4852.
 Web of Science® Times Cited: 43

Matthias Wagner, Ivan Gueorguiev Ivanov, Liutauras Storasta, Peder Bergman, Björn Magnusson, Weimin Chen and Erik Janzén
  Photoluminescence upconversion in 4H-SiC
  Applied Physics Letters, 2002, 81(14), 2547.
 Web of Science® Times Cited: 1

Irina Buyanova, Galia Pozina, Peder Bergman, Weimin Chen, H. P. Xin and C. W. Tu
  Time-resolved studies of photoluminescence in GaNxP1-x alloys: Evidence for indirect-direct band gap crossover
  Applied Physics Letters, 2002, 81(1), 52.
 Web of Science® Times Cited: 47

Liutauras Storasta, Fredrik Carlsson, S.G. Sridhara, Peder Bergman, Anne Henry, T. Egilsson, A. Hallen and Erik Janzén
  Pseudodonor nature of the D1 defect in 4H-SiC
  Applied Physics Letters, 2001, 78(1), 46-48.
 Web of Science® Times Cited: 71

Galia Pozina, N.V. Edwards, Peder Bergman, Tanja Paskova, Bo Monemar, M.D. Bremser and R.F. Davis
  Time-resolved spectroscopy of strained GaN/AIN/6H-SiC heterostructures grown by metalorganic chemical vapor deposition
  Applied Physics Letters, 2001, 78(8), 1062-1064.
 Web of Science® Times Cited: 9

Galia Pozina, Peder Bergman, Bo Monemar, S. Yamaguchi, H. Amano and I. Akasaki
  Time-resolved optical properties of GaN grown by metalorganic vapor phase epitaxy with indium surfactant
  Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, 2001, 82(1-3), 137-139.
 Web of Science® Times Cited: 3

Galia Pozina, Peder Bergman, Bo Monemar, M. Iwaya, S. Nitta, H. Amano and I. Akasaki
  Photoluminescence of InGaN/GaN multiple quantum wells grown by mass transport
  Journal of Crystal Growth, 2001, 230(3-4), 473-476.
 Web of Science® Times Cited: 1

S.G. Sridhara, Fredrik Carlsson, Peder Bergman and Erik Janzén
  Luminescence from stacking faults in 4H SiC
  Applied Physics Letters, 2001, 79(24), 3944-3946.
 Web of Science® Times Cited: 79

Bo Monemar, Weimin Chen, Plamen Paskov, Tanja Paskova, Galia Pozina and Peder Bergman
  The 3.466 eV Bound Exciton in GaN
  Physica status solidi. B, Basic research, 2001, 228(2), 489-492.
 Web of Science® Times Cited: 7

A. A. Toropov, S. V. Sorokin, K. A. Kuritsyn, S. V. Ivanov, Galia Pozina, Peder Bergman, Matthias Wagner, Weimin Chen, Bo Monemar, A. Waag, D. R. Yakovlev, C. Sas, W. Ossau and G. Landwehr
  Magneto-photoluminescence studies of Cd(Mn)Se/Zn(Mn)Se diluted magnetic nanostructures
  Physica. E, Low-Dimensional systems and nanostructures, 2001, 10(1-3), 362-367.
 Web of Science® Times Cited: 2

Q.X. Zhao, M. Willander, Peder Bergman, Per-Olof Holtz, W. Lu and S.C. Shen
  Dynamic properties of radiative recombination in p-type d-doped layers in GaAs
  Physical review. B, Condensed matter and materials physics, 2001, 63, 125337.
 Web of Science® Times Cited: 3

M. Godlewski, R. Narkowicz, T. Wojtowicz, Peder Bergman and Bo Monemar
  Quasi-zero-dimensional excitons in quantum well structures of CdTe/CdMnTe
  Journal of Crystal Growth, 2000, 214, 420-423.
 Web of Science® Times Cited: 6

A.A. Toropov, T.V. Shubina, A.V. Lebedev, S.V. Sorokin, S.V. Ivanov, Galia Pozina, Peder Bergman and Bo Monemar
  Dynamics of excitons near the mobility edge in CdSe/ZnSe superlattices
  Journal of Crystal Growth, 2000, 214, 806-809.
 Web of Science® Times Cited: 2

S.V. Ivanov, A.A. Toropov, T.V. Shubina, A.V. Lebedev, S.V. Sorokin, A.A. Sitnikova, P.S. Kop'Ev, G. Reuscher, M. Keim, F. Bensing, A. Waag, G. Landwehr, Galia Pozina, Peder Bergman and Bo Monemar
  MBE growth and properties of bulk BeCdSe alloys and digital (BeSe: CdSe)/ZnSe quantum wells
  Journal of Crystal Growth, 2000, 214, 109-114.
 Web of Science® Times Cited: 17

A.A. Toropov, T.V. Shubina, S.V. Sorokin, R.N. Kyutt, S.V. Ivanov, Galia Pozina, Peder Bergman, Bo Monemar, M. Karlsteen and M. Willander
  Excitons as a probe of interface morphology in Cd(Zn)Se/ZnSe heterostructures
  Applied Surface Science, 2000, 166(1), 278-283.
 Web of Science® Times Cited: 4

Irina Buyanova, Galia Pozina, P. N. Hai, N. Q. Thinh, Peder Bergman, Weimin Chen, H. P. Xin and C. W. Tu
  Mechanism for rapid thermal annealing improvements in undoped GaNxAs1-x/GaAs structures grown by molecular beam epitaxy
  Applied Physics Letters, 2000, 77(15), 2325.
 Web of Science® Times Cited: 72

Bo Monemar and Peder Bergman
  Comment on "Fermi-edge singularity observed in a modulation-doped AlGaN/GaN heterostructure"
  Applied Physics Letters, 2000, 76, 655.

Magnus Berggren, Peder Bergman, Jan Fagerström, Olle Inganäs, Mats Andersson, Helge Weman, Magnus Granström, Sven Stafström, O Wennerström and T Hjertberg
  Controlling inter-chain and intra-chain excitations of a poly(thiophene) derivative in thin films
  Chemical Physics Letters, 1999, 304(1-2), 84-90.

Bo Monemar, Peder Bergman, J Dalfors, Galia Pozina, Bo Sernelius, Per-Olof Holtz, H Amano and I Akasaki
  Radiative recombination in In0.15Ga0.85N/GaN multiple quantum well structures
  MRS Internet journal of nitride semiconductor research, 1999, 4(16), .

Irina Buyanova, Weimin Chen, Galia Pozina, Peder Bergman, Bo Monemar, H. P. Xin and C. W. Tu
  Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy
  Applied Physics Letters, 1999, 75(4), 501.

Olle Kordina, Christer Hallin, Anne Henry, Peder Bergman, Ivan Gueorguiev Ivanov, A. Ellison, Nguyen Tien Son and Erik Janzén
  Growth of SiC by "Hot-Wall" CVD and HTCVD
  Physica status solidi. B, Basic research, 1997, 202(1), 321-334.

Carl Hemmingsson, Nguyen Tien Son, Olle Kordina, Peder Bergman, Erik Janzén, J.L. Lindström, S. Savage and N. Nordell
  Deep-Level Defects in Electron-irradiated 4H SiC Epitaxial Layers
  Journal of Applied Physics, 1997, 81(9), 6155-6159.

Chapters in Books

T Egilsson, Ivan Gueorguiev Ivanov, Nguyen Tien Son, Anne Henry, Peder Bergman and Erik Janzén
  Exciton and defect photoluminescence from SiC
  Silicon carbide and related materials 2002: ECSCRM 2002 proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden, , 2003, 81-120.


Conference Articles

Ian Don Booker, Hana Abdalla, L. Lilja, Jawad ul-Hassan, Peder Bergman, Einar Sveinbjörnsson and Erik Janzén
  Oxidation induced ON1, ON2a/b defects in 4H-SiC characterized by DLTS
  SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014.


Louise Lilja, Jawad ul-Hassan, Erik Janzén and Peder Bergman
  Improved Epilayer Surface Morphology on 2 degrees off-cut 4H-SiC Substrates
  SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014.


Jawad Hassan, H. Bae, L. Lilja, Ildiko Farkas, I. Kim, Pontus Stenberg, Jianwu Sun, Olle Kordina, Peder Bergman, S. Ha and Erik Janzén
  Fast growth rate epitaxy on 4((degrees)under-bar) off-cut 4-inch diameter 4H-SiC wafers
  SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014.


B. Kallinger, M. Rommel, Louise Lilja, Jawad ul-Hassan, Ian Don Booker, Erik Janzén and Peder Bergman
  Comparison of carrier lifetime measurements and mapping in 4H SIC using time resolved photoluminescence and μ-PCD
  SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014.


A. Salemi, B. Buono, A. Hallen, Jawad ul-Hassan, Peder Bergman, C.M. Zetterling and M. Östling
  Fabrication and design of 10 kV PiN diodes using on-axis 4H-SiC
  SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014.


Jawad ul Hassan, Ian Booker, Louise Lilja, Anders Hallén, Martin Fagerlind, Peder Bergman and Erik Janzén
  On-axis homoepitaxial growth of 4H-SiC PiN structure for high power applications
  Materials Science Forum (Volumes 740 - 742), 2013.


Louise Lilja, Jawad ul-Hassan, Ian D. Booker, Peder Bergman and Erik Janzén
  The Effect of Growth Conditions on Carrier Lifetime in n-type 4H-SiC Epitaxial Layers
  Materials Science Forum Vol 717 - 720, 2012.


 Web of Science® Times Cited: 3

Jawad Hassan, Louise Lilja, Ian Don Booker, Peder Bergman and Erik Janzén
  Influence of Growth Mechanism on Carrier Lifetime in on-axis Homoepitaxial Layers of 4H-SiC
  Materials Science Forum Vols 717 - 720, 2012.


 Web of Science® Times Cited: 1

Ian Don Booker, Jawad Hassan, Anders Hallén,, Einar Ö. Sveinbjörnsson, Olle Kordina and Peder Bergman
  Comparison of Post-Growth Carrier Lifetime Improvement Methods for 4H-SiC Epilayers
  Materials Science Forum Vols 717 - 720, 2012.


 Web of Science® Times Cited: 1

Peder Bergman, Ian Don Booker, Louise Lilja, Jawad Hassan and Erik Janzén
  Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation
  Materials Science Forum Vols 717 - 720, 2012.


Ian Don Booker, Jawad Hassan, Erik Janzén and Peder Bergman
  High-Resolution Time-Resolved Carrier Lifetime and Photoluminescence Mapping of 4H-SiC Epilayers
  Materials Science Forum Vols 717 - 720, 2012.


Jawad Hassan, Patrik Scajev, Kestutis Jarasiunas and Peder Bergman
  Optically Detected Temperature Dependences of Carrier Lifetime and Diffusion Coefficient in 4H- and 3C-SiC
  Materials Science Forum (Volumes 679 - 680), 2011.


 Web of Science® Times Cited: 1

Niclas Ejebjörk, Herbert Zirath, Peder Bergman, Björn Magnusson and Niklas Rorsman
  Optimization of SiC MESFET for High Power and High Frequency Applications
  Materials Science Forum (Volumes 679 - 680), 2011.


Jawad ul-Hassan, Peder Bergman, Anne Henry and Erik Janzén
  High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC
  Materials Science Forum (Volumes 679 - 680), p115-118, 2011.


 Web of Science® Times Cited: 1

Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, David Lindgren, Lars Samuelson, Xianfeng Ni, Hadis Morkoç, Tanya Paskova, Zhaoxia Bi and Jonas Ohlsson
  Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates
  Gallium Nitride Materials and Devices VI, 2011.


 Web of Science® Times Cited: 1  Fulltext PDF

Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, H. Amano, I. Akasaki, S. Figge, D. Hommel, Tanja Paskova and A. Usiui
  Mg related acceptors in GaN
  Phys. Status Solidi C 7, 2010.


 Web of Science® Times Cited: 4  Fulltext PDF

Jawad ul-Hassan, Peder Bergman, Justinas Palisaitis, Anne Henry, P.J. McNally, S. Anderson and Erik Janzén
  Growth and properties of SiC on-axis homoepitaxial layers
  ICSCRM 2009, 2010.


 Web of Science® Times Cited: 4

Jawad ul-Hassan, Anne Henry and Peder Bergman
  Optical and Structural Properties of In-grown Stacking Faults in 4H-SiC Epilayers
  ICSCRM2009, 2010.


 Web of Science® Times Cited: 2

Jawad ul-Hassan and Peder Bergman
  Single Shockley Stacking Faults in as-grown 4H-SiC Epilayers
  Materials Science Forum, Vols. 645-648, 2010.


 Web of Science® Times Cited: 1

Justinas Palisaitis, Peder Bergman and Per Persson
  Two Dimensional X-ray Diffraction Mapping of Basal Plane Orientation on SiC Substrates
  ECSCRM2008,2009, 2009.


 Web of Science® Times Cited: 1

Jawad ul-Hassan and Peder Bergman
  Influence of Structural defects on Carrier Lifetime in 4H Epitaxial Layers, Studied by High Resolution Optical Lifetime Mapping
  ECSCRM2008,2008, 2009.


 Web of Science® Times Cited: 1

Jawad ul-Hassan, Peder Bergman, Anne Henry, P. Brosselard, P. Godignon and Erik Janzén
  On-axis Homoepitaxy on Full 2- 4H-SiC Wafer for High Power Applications
  Materials Science Forum Vols. 615-617, 2009.


 Web of Science® Times Cited: 2

Anne Henry, Peder Bergman and Erik Janzén
  Titanium Related Luminescence in SiC
  ICSCRM2007,2007, 2009.


P. Brosselard, N. Camara, Jawad ul-Hassan, X. Jordà, Peder Bergman, J. Montserrat and J. Millán
  3.3 kV-10A 4H-SiC PiN diodes
  Materials Science Forum, Vols. 600-603, 2009.


 Web of Science® Times Cited: 5

Bo Monemar, Galia Pozina, Plamen Paskov, Carl Hemmingsson, Peder Bergman, T. Kawashima, H. Amano, I. Akasaki and A. Usui
  Acceptors in Mg doped GaN, optical properties and metastability
  IWN 2008,2008, 2008.


Tatiana Choubina, M.M. Glazov, A.A. Toropov, Ivan Gueorguiev Ivanov, N.A. Gippius, A. Vasson, J. Leymaire, A. Kavokin, A. Usui, Peder Bergman, Galia Pozina and Bo Monemar
  Realization of slow light in GaN crystals
  IWN 2008,2008, 2008.


Tatiana Choubina, M.M. Glazov, A.A. Toropov, N.A. Gippius, Peder Bergman, Bo Monemar, A. Usui, A. Vasson, J. Leymarie, Ivan Gueorguiev Ivanov and P.S. Kopev
  Slow light in GaN
  16th Int. Symp. ¿Nanostructures: Physics and Technology,2008, 2008.


Tatiana Choubina, M.M. Glazov, A.A. Toropov, N.A. Gippius, A. Vasson, J. Leymarie, A. Kavokin, A. Usui, Peder Bergman, Galia Pozina and Bo Monemar
  The slow light in GaN
  ICPS2008,2008, 2008.


Bo Monemar, Plamen Paskov, Galia Pozina, Peder Bergman, Carl Hemmingsson, A.A. Toropov, Tatiana Choubina, T. Kawashima, H. Amano, I. Akasaki, A. Usui and Tanja Paskova
  Properties of dopants and defects in GaN from bound exciton spectra
  Meijo International Symposium on Nitride Semiconductors 2008,2008, 2008.


Bo Monemar, Plamen Paskov, Galia Pozina, Peder Bergman, Carl Hemmingsson, T. Kawashima, H. Amano, I. Akasaki and A. Usui
  Optical properties and acceptor states in Mg doped GaN
  8^th Akasaki Symposium,2008, 2008.


P. Brosselard, A.P. Tomas, N. Camara, Jawad ul-Hassan, X. Jorda, M. Vellvehi, P. Godignon, J. Millan and Peder Bergman
  The effect of the temperature on the bipolar degradation of 3.3 kV 4H-SiC PiN diodes
  20th International Symposium on Power Semiconductor Devices ICs,2008, 2008.


P Brosselard, M Berthou, Jawad Hassan, X Jorda, Peder Bergman, J Montserrat, P Godignon and J Millan
  Comparison between 3.3kV 4H-SiC schottky and bipolar diodes
  IET Seminar Digest, Volume 2008, Issue 2, 2008, 2008.


Peder Bergman, Jawad ul-Hassan, Anne Henry, P. Godignon, P. Brosselard and Erik Janzén
  Improved SiC Epitaxial Material for Bipolar Applications
  Proc. of MRS Spring Meeting 2008, 2008.


Galia Pozina, Carl Hemmingsson, Peder Bergman, T. Kawashima, H. Amano, I. Akasaki, A. Usui and Bo Monemar
  Optical properties of metastable shallow acceptors in Mg-doped GaN layers grown by metal-organic vapor phase epitaxy
  in PHYSICS OF SEMICONDUCTORS, vol 1199, 2008.


P Brosselard, X Jorda, M Vellvehi, P Godignon, J Millan, Peder Bergman and B Lambert
  High temperature behaviour of 3.5 kV 4H-SiC JBS diodes
  Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2007.


 Web of Science® Times Cited: 5

Tatiana Choubina, M.M. Glasov, A.A. Toropov, E.L. Ivchenko, A. Usui, Peder Bergman and Bo Monemar
  Light diffusion in GaN epilayers
  3rd International Conference on Spontaneous Coherence in Excitonic System,2007, 2007.


Irina Buyanova, Peder Bergman, Galia Pozina, Weimin Chen, S. Rawal, D.P. Norton, S.J. Pearton, A. Osinsky and J.W. Dong
  Origin of near-band-edge emission in ZnCdO alloys
  2007 MRS Fall Meeting,2007, 2007.


Irina Buyanova, Peder Bergman, Weimin Chen, Morteza Izadifard, Y.G. Hong and C.W. Tu
  Role of nitrogen in photoluminescence up-conversion in GaInNP/GaAs heterostructures
  AIP Conference Proceedings / Volume 893, 2007.


Henrik Pedersen, Anne Henry, Jawad ul-Hassan, Peder Bergman and Erik Janzén
  Growth and Photoluminescence study of Aluminium doped SiC epitaxial layers
  Materials Science Forum, Vols. 556-557, 2007.


 Web of Science® Times Cited: 1

Plamen Paskov, Bo Monemar, A. Toropov, Peder Bergman and A. Usui
  Two-electron transition spectroscopy of shallow donors in bulk GaN
  Proc. of the International Workshop on Nitride Semiconductors IWN2006,2006, 2007.


 Web of Science® Times Cited: 12

Anne Henry, Jawad ul-Hassan, Henrik Pedersen, Franziska Beyer, Peder Bergman, Sven Andersson, Erik Janzén and P. Godignon
  Thick epilayers for power devices
  Materials Science Forum, vol. 556-557, 2007.


 Web of Science® Times Cited: 8

Jawad ul-Hassan, Peder Bergman, Anne Henry, Henrik Pedersen, P. J. McNally and Erik Janzén
  4H-SiC Epitaxial Layers Grown on on-axis Si-face Substrate
  Materials Science Forum, Vols. 556-557, 2007.


 Web of Science® Times Cited: 8

Jawad ul-Hassan, Anne Henry, Peder Bergman and Erik Janzén
  Epitaxial growth of thin 4H-SiC layers with uniform doping depth profile
  Thin Solid Films, Vol. 515, 2006.


 Web of Science® Times Cited: 4

J.J. Sumakeris, Peder Bergman, M.K. Das, Christer Hallin, B.A. Hull, Erik Janzén, H. Lendenmann, M.J. OLoughlin, M.J. Paisley, S. Ha, M. Skowronski, J.W. Palmour, C.H. Carter and Jr
  Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices
  Mater. Sci. Forum, Vol. 527-529, 2006.


Hamid Harati Zadeh, Bo Monemar, Plamen Paskov, Per-Olof Holtz, Peder Bergman, H. Amano and I. Akasaki
  Optical Studies of Wide Band Gap III-Nitride Semiconductor Quantum Wells and Superlattices
  European Materials Research Society E-MRS fall meeting 2006,2006, 2006.


A. Thuaire, Anne Henry, Björn Magnusson, Peder Bergman, Weimin Chen, Erik Janzén, M. Mermoux and E. Bano
  Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques
  Materials Science Forum, Vols. 527-529, 2006.


 Web of Science® Times Cited: 2

Jawad ul-Hassan, Christer Hallin, J. Peder Bergman and Erik Janzén
  Properties of Thick n- and p-type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on off- and on-axis Substrates
  Materials Science Forum, Vols. 527-529, 2006.


K Neimontas, R Aleksiejunas, M Sudzius, K Jarasiunas and Peder Bergman
  Optical studies of nonequilibrium carrier dynamics in highly excited 4H-SiC epitaxial layers
  Materials Science Forum, Vols. 483-485, 2005.


 Web of Science® Times Cited: 4

Liutauras Storasta, Fredrik Carlsson, Peder Bergman and Erik Janzén
  Recombination enhanced defect annealing in 4H-SiC
  Materials Science Forum, Vols. 483-485, 2005.


 Web of Science® Times Cited: 3

Morteza Izadifard, Peder Bergman, Igor Vorona, Weimin Chen, Irina Buyanova, A. Utsumi, Y. Furukawa, S. Moon, A. Wakahara and H. Yonezu
  GaNxP1-x Alloys Lattice Matched to Si: A Novel Material System for Nano- Applications
  3rd annual Nano Materials for Defense Applications Symposium,2005, 2005.


F.V. Kyrychenko, C.J. Stanton, C.R. Abernathy, S.J. Pearton, F. Ren, G. Thaler, R. Frazier, Irina Buyanova, J. P: Bergman and Weimin Chen
  Investigation of a GaMnN/GaN/InGaN structure for spinLED
  27th Int. Conf. on the Physics of Semicond,2004, 2005.


Erik Janzén, Peder Bergman, Örjan Danielsson, Urban Forsberg, Christer Hallin, Jawad ul-Hassan, Anne Henry, Ivan Gueorguiev Ivanov, Anelia Kakanakova-Gueorguie, Per Persson and Qamar Ul Wahab
  SiC and III-nitride Growth in a Hot-wall CVD Reactor
  Materials Science Forum, ISSN 0255-5476, volume 483-485, 2005.


 Web of Science® Times Cited: 6

A Ellison, Björn Magnusson, B Sundqvist, Galia Pozina, Peder Bergman, Erik Janzén and A Vehanen
  SiC crystal growth by HTCVD
  Materials Science Forum, Vols. 457-460, 2004.


 Web of Science® Times Cited: 43

Morteza Izadifard, Irina Buyanova, Peder Bergman, Weimin Chen, A. Utsumi, Y. Furukawa, A. Wakahara and H. Yonezu
  Effects of rapid thermal annealing on optical quality of GaNP alloys
  EMRS-2004 Spring Meeting,2004, 2004.


A. A. Toropov, Ya. V. Terentev, A. V. Lebedev, S. V. Sorokin, V. A. Kaygorodov, S. V. Ivanov, P. S. Kopev, Irina Buyanova, Peder Bergman, Bo Monemar and Weimin Chen
  Exciton magnetic polarons in a type II ZnMnSe/ZnSSe superlattice
  Physica status solidi (c)Special Issue: 11th International Conference on II–VI Compounds (II–VI 2003)Volume 1, Issue 4, 2004.


Christer Hallin, Qamar Ul Wahab, Ivan Gueorguiev Ivanov, Peder Bergman and Erik Janzén
  Homoepitaxial On-Axis Growth of 4H- and 6H-SiC by CVD
  Materials Science Forum, Vols. 457-460, 2004.


 Web of Science® Times Cited: 14

Liutauras Storasta, Anne Henry, Peder Bergman and Erik Janzén
  Investigations of possible nitrogen participation in the Z1/Z2 defect in 4H-SiC
  Mater. Sci. Forum, Vol. 457-460, 2004.


 Web of Science® Times Cited: 16

Bo Monemar, Plamen Paskov, H. Haratizadeh, Galia Pozina, Peder Bergman, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures
  Proceedings of SPIE, the International Society for Optical Engineering, 2003.


Erik Janzén, Ivan Gueorguiev Ivanov, Son Tien Nguyen, Björn Magnusson, Z Zolnai, Anne Henry, Peder Bergman, Liutauras Storasta and Fredrik Carlsson
  Defects in SiC
  Physica B: Condensed Matter, Vols. 340-342, 2003.


 Web of Science® Times Cited: 14

M Godlewski, E Guziewicz, K Leonardi, D Hommel, Peder Bergman and Bo Monemar
  Influence of structural properties and of growth conditions on exciton properties in ZnCdSe/ZnSe quantum well structures
  Materials Science Forum, Vols. 389-393, 2002.


M Godlewski, VY Ivanov, A Khachapuridze, R Narkowicz, Peder Bergman and Bo Monemar
  Interaction of microwave heated hot carriers with recombination centers
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 1

Peder Bergman, Galia Pozina, Bo Monemar, S Kamiyama, M Iwaya, H Amano and I Akasaki
  Photoluminescence and electroluminescence characterization of InxGa1-x/InyGa1-yN multiple quantum well light emitting diodes
  Materials Science Forum, Vols. 389-393, 2002.


Per Persson, H Jacobson, JM Molina-Aldareguia, Peder Bergman, T Tuomi, WJ Clegg, Erik Janzén and Lars Hultman
  Structural defects in electrically degraded 4H-SiC PiN diodes
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 7

Bo Monemar, Plamen Paskov, Tanja Paskova, Peder Bergman, Galia Pozina, Weimin Chen, P.N. Hai, Irina A. Buyanova, H. Amano and I. Akasaki
  Optical characterization of III-nitrides
  , 2002.


 Web of Science® Times Cited: 20

M. Godlewski, V.Yu. Ivanov, Peder Bergman, Bo Monemar, Z. Golacki and G. Karczewski
  Mn2+ intra-shell recombination in bulk and quantum dots of II-VI compounds
  Journal of Alloys and Compounds, 2002.


 Web of Science® Times Cited: 21

S.G. Sridhara, P.O. Persson, F.H.C. Carlsson, Peder Bergman, Erik Janzén, G. Evans and J.W. Steeds
  Electron irradiation of 4H SiC by TEM: An optical study
  Mat. Res. Soc. Symp. Proc. Vol. 640, 2001.


F.H.C. Carlsson, Qamar Ul Wahab, Peder Bergman and Erik Janzén
  Electroluminescence from 4H-SiC Schottky Diodes
  Mat. Res. Soc. Symp. Proc., Vol. 640, 2001.


Fredrik Carlsson, Liutauras Storasta, Björn Magnusson, Peder Bergman, K Skold and Erik Janzén
  Neutron irradiation of 4H SiC
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 5

Liutauras Storasta, Fredrik Carlsson, SG Sridhara, D Aberg, Peder Bergman, A Hallen and Erik Janzén
  Proton irradiation induced defects in 4H-SiC
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 15

Erik Janzén, Anne Henry, Peder Bergman, A. Ellison and Björn Magnusson
  Material characterization need for SiC-based devices
  Sci. Eng. B, Vol. 4, 2001.


 Web of Science® Times Cited: 32

Peder Bergman, Liutauras Storasta, Fredrik Carlsson, S. Sridhara, Björn Magnusson and Erik Janzén
  Defects in 4H silicon carbide
  Physica B, Vols. 308-310, 2001.


 Web of Science® Times Cited: 9

Fredrik Carlsson, Liutauras Storasta, Peder Bergman and Erik Janzén
  Trapped carrier electroluminescence (TraCE) - A novel method for correlating electrical and optical measurements
  Physica B, Vols. 308-310, 2001.


 Web of Science® Times Cited: 1

Peder Bergman, A. Ellison, Anne Henry, Liutauras Storasta and Erik Janzén
  The role of defects on optical and electrical properties of SiC
  SIMC-XI 2000, 2000.


M Domeij, B Breitholtz, D Aberg, A Martinez and Peder Bergman
  Dynamic avalanche and trapped charge in 4H-SiC diodes
  Materials Science Forum, Vols. 338-342, 2000.


Fredrik Carlsson, Liutauras Storasta, Carl Hemmingsson, Peder Bergman and Erik Janzén
  Electroluminescence from implanted and epitaxially grown pn-diodes
  Materials Science Forum, Vols. 338-343, 2000.


 Web of Science® Times Cited: 2

Galia Pozina, Peder Bergman, Carl Hemmingsson and Erik Janzén
  Time-resolved photoluminescence study of bound and free excitons in 4H SiC
  Materials Science Forum, Vols. 338-343, 2000.


 Web of Science® Times Cited: 1

A Ellison, J Zhang, W Magnusson, Anne Henry, Qamar Ul Wahab, Peder Bergman, Carl Hemmingsson, Tien Son Nguyen and Erik Janzén
  Fast SiC epitaxial growth in a chimney CVD reactor and HTCVD crystal growth developments
  Materials science Forum, Vols. 338-342, 2000.


 Web of Science® Times Cited: 29

Peder Bergman, Galia Pozina, Bo Monemar, J. Dalfors, Bo Sernelius, Per-Olof Holtz, H. Amano and I. Akasaki
  Radiative recombination in InGaN/GaN multiple quantum well
  ICSCRM 99,1999, 2000.


Bo Monemar, Peder Bergman, Galia Pozina, Irina Buyanova, Weimin Chen, Matthias Wagner and Tanja Paskova
  Defects in Gallium Nitride
  International Workshop on Materials Science,1999, 1999.


M. Godlewski, T. Suski, I. Grzegory, S. Porowski, Peder Bergman, Weimin Chen and Bo Monemar
  Mechanism of radiative recombination in acceptor-doped bulk GaN crystals
  20th International Conference on Defects in Semiconductors ICDS-20,1999, 1999.


M. Godlewski, T. Suski, I. Grzegory, S. Porowski, Peder Bergman, Weimin Chen and Bo Monemar
  Photoluminescence mechanisms in undoped and in Mg doped bulk GaN
  24th International Conference on the Physics of Semiconductors,1998, 1999.


Ph.D. Theses

Jawad ul Hassan
  Epitaxial Growth and Characterization of SiC for High Power Devices
  2009.


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