Publications for Patrick Carlsson
Co-author map based on ISI articles 2007-

Keywords

vsub> vacancy temperature substrates sic si semi-insulating resonance hf ev epr energy ei4 defects defect carbon antisite annealing 6h-sic 4h-sic

Journal Articles

Patrick Carlsson, Tien Son Nguyen, A. Gali, J. Isoya, N. Morishita, T. Ohshima, B. Magnusson and Erik Janzén
  EPR and ab initio calculation study on the EI4 center in 4H and 6H-SiC
  Physical Review B. Condensed Matter and Materials Physics, 2010, 82(23), 235203.
   Fulltext  PDF  
 Web of Science® Times Cited: 1

Erik Janzén, Adam Gali, Patrick Carlsson, Andreas Gällström, Björn Magnusson and Nguyen Tien Son
  The Silicon vacancy in SiC
  Materials Science Forum, 2009, 615-617, 347-352.
 Web of Science® Times Cited: 3

Erik Janzén, Adam Gali, Patrick Carlsson, Andreas Gällström, Björn Magnusson and Nguyen Tien Son
  The silicon vacancy in SiC
  Physica. B, Condensed matter, 2009, 404(22), 4354-4358.
 Web of Science® Times Cited: 8

Patrick Carlsson, Nguyen Son Tien, Franziska Beyer, Henrik Pedersen, J Isoya, N Morishita, T Ohshima and Erik Janzén
  Deep levels in low-energy electron-irradiated 4H-SiC
  PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2009, 3(4), 121-123.
 Web of Science® Times Cited: 7

Henrik Pedersen, Stefano Leone, Anne Henry, Vanya Darakchieva, Patrick Carlsson, Andreas Gällström and Erik Janzén
  Very high crystalline quality of thick 4H-SiC epilayers grown from methyltrichlorosilane (MTS)
  Physica status solidi (RRL) - Rapid Research Letters, 2008, 2(4), 188-190.
 Web of Science® Times Cited: 16

Son Tien Nguyen, Patrick Carlsson, Andreas Gällström, Björn Magnusson and Erik Janzén
  Deep levels and carrier compensation in V-doped semi-insulating 4H-SiC
  Applied Physics Letters, 2007, 91(20), .
 Web of Science® Times Cited: 3

Son Tien Nguyen, Patrick Carlsson, Jawad ul-Hassan, Björn Magnusson and Erik Janzén
  Defects and carrier compensation in semi-insulating 4H-SiC substrates
  Physical Review B Condensed Matter, 2007, 75(15), .
 Web of Science® Times Cited: 31

Son Tien Nguyen, Patrick Carlsson, Jawad ul-Hassan, Erik Janzén, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, N. Morishita, T. Ohshima and H. Itoh
  Divacancy in 4H-SiC
  Physical review letters / publ. by the American Physical Society, 2006, 96, 055501-1.
 Web of Science® Times Cited: 70

Conference Articles

Patrick Carlsson, Nguyen Tien Son, Björn Magnusson, J. Isoya, N. Morishita, T. Ohshima and Erik Janzén
  The EI4 EPR centre in 6H SiC
  Physica Scripta, Vol. T141, 2010.


Tien Son Nguyen, Patrick Carlsson, J. Isoya, N. Morishita, T. Ohshima, Björn Magnusson and Erik Janzén
  The carbon vacancy related EI4 defect in 4H-SiC
  Materials Science Forum. Vols. 645-648, 2010.


 Web of Science® Times Cited: 1  Fulltext PDF

Patrick Carlsson, Son Tien Nguyen, Henrik Pedersen, J. Isoya, N. Morishita, T. Ohshima, H. Itoh and Erik Janzén
  Photo-EPR Studies on Low-Energy Electron-irradiated 4H-SiC
  Materials Science Forum, Vols. 615-617, 2009.


S. Hahn, Franziska Beyer, Andreas Gällström, Patrick Carlsson, Anne Henry, Björn Magnusson, J. Niklas and Erik Janzén
  Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material
  Materials Science Forum Vols. 600-603, 2009.


 Web of Science® Times Cited: 2

Patrick Carlsson, Son Tien Nguyen, Björn Magnusson and Erik Janzén
  Intrinsic Defects in HPSI 6H-SiC: an EPR Study
  Materials Science Forum, Vols. 600-603, 2009.


 Web of Science® Times Cited: 2

Son Tien Nguyen, Patrick Carlsson, Andreas Gällström, Björn Magnusson and Erik Janzén
  Deep Levels Responsible for Semi-insulating Behaviour in Vanadium-doped 4H-SiC Substrates
  Materials Science Forum, Vols. 600-603, 2009.


Patrick Carlsson, Kaneez Rabia, Son Tien Nguyen, T. Ohshima, N. Morishita, H. Itoh, J. Isoya and Erik Janzén
  Electron paramagnetic resonance study on n-type electron-irradiated 3C-SiC
  Proc. of IVC-17/ICSS-13 and ICNT 2007, 2008.


Son Tien Nguyen, Patrick Carlsson, Andreas Gällström, Björn Magnusson and Erik Janzén
  Prominent defects in semi-insulating SiC substrates
  Physica B, Vol. 401-402, 2007.


 Web of Science® Times Cited: 9

Son Tien Nguyen, Patrick Carlsson, Björn Magnusson and Erik Janzén
  Intrinsic Defects in Semi-Insulating SiC: Deep Levels and their Roles in Carrier Compensation
  Materials Science Forum, Vols. 556-557, 2007.


 Web of Science® Times Cited: 3

Andreas Gällström, Björn Magnusson, Patrick Carlsson, Son Tien Nguyen, Anne Henry, Franziska Beyer, Mikael Syväjärvi, Rositsa Yakimova and Erik Janzén
  Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC
  Materials Science Forum, vol. 556-557, 2007.


 Web of Science® Times Cited: 4

Patrick Carlsson, Son Tien Nguyen, T. Umeda, J. Isoya and Erik Janzén
  Deep Acceptor Levels of the Carbon Vacancy-Carbon Antisite Pairs in 4H-SiC
  Materials Science Forum, Vols. 556-557, 2007.


 Web of Science® Times Cited: 3

Son Tien Nguyen, Patrick Carlsson, Björn Magnusson and Erik Janzén
  Characterization of semi-insulating SiC
  Mater. Res. Soc. Symp. Proc. 911, 2006.


Ph.D. Theses

Patrick Carlsson
  Electron paramagnetic resonance study of defects in SiC
  2010.


  Fulltext PDF