Publications for Örjan Danielsson
Co-author map based on ISI articles 2007-

Publications mentioned in social media 1 times*

Keywords

vapor temperature silicon sic si-face reactor precursors nitrogen model incorporation hot-wall gas-phase epitaxial doping cvd composition carbon carbide c/si aluminum

Journal Articles

Milan Yazdanfar, Henrik Pedersen, Pitsiri Sukkaew, Ivan Gueorguiev Ivanov, Örjan Danielsson, Olle Kordina and Erik Janzén
  On the use of methane as a carbon precursor in Chemical Vapor Deposition of silicon carbide
 
Altmetric usage: 1

  Journal of Crystal Growth, 2014, 390, 24-29.
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Örjan Danielsson, Pitsiri Sukkaew, Lars Ojamäe, Olof Kordina and Erik Janzén
  Shortcomings of CVD modeling of SiC today
  Theoretical Chemistry accounts, 2013, 132(11), 1398.
 Web of Science® Times Cited: 2

Örjan Danielsson, Pitsiri Sukkaew, Milan Yazdanfar, Olle Kordina and Erik Janzén
  Simulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiC
  Materials Science Forum, 2013, 740-742, 213-216.
   Fulltext  PDF  
 Web of Science® Times Cited: 2

Stefano Leone, Olle Kordina, Anne Henry, Shin-ichi Nishizawa, Örjan Danielsson and Erik Janzén
  Gas-Phase Modeling of Chlorine-Based Chemical Vapor Deposition of Silicon Carbide
  Crystal Growth & Design, 2012, 12(4), 1977-1984.
 Web of Science® Times Cited: 3

M. Pons, E. Blanquet, J.M. Dedulle, P. Wellmann, Örjan Danielsson, P. Ferret, L. di Cioccio, F. Baillet, D. Chaussende and R. Madar
  Progress and limits of the numerical simulation of SiC bulk and epitaxial growth processes
  Materials Science Forum, 2005, 483-485, .
 Web of Science® Times Cited: 3

Örjan Danielsson, Christer Hallin and Erik Janzén
  Reducing stress in silicon carbide epitaxial layers
  Journal of Crystal Growth, 2003, 252(1-3), 289-296.

Örjan Danielsson and Erik Janzén
  Using N2 as precursor gas in III-nitride CVD growth
  Journal of Crystal Growth, 2003, 253(1-4), 26-37.

Urban Forsberg, Örjan Danielsson, Anne Henry, M. K. Linnarsson and Erik Janzén
  Aluminum doping of epitaxial Silicon Carbide
  Journal of Crystal Growth, 2003, 253(1-4), 340-350.
 Web of Science® Times Cited: 44

Örjan Danielsson, Urban Forsberg and Erik Janzén
  Predicted nitrogen doping concentrations in silicon carbide epitaxial layers grown by hot-wall chemical vapor deposition
  Journal of Crystal Growth, 2003, 250(3-4), 471-478.
 Web of Science® Times Cited: 23

Jie Zhang, Alexandre Ellison, Örjan Danielsson, M. K. Linnarsson, Anne Henry and Erik Janzén
  Epitaxial growth of 4H SiC in a vertical hot-wall CVD reactor: Comparison between up- and down-flow orientations
  Journal of Crystal Growth, 2002, 241(4), 421-430.

Urban Forsberg, Örjan Danielsson, Anne Henry, M. K. Linnarsson and Erik Janzén
  Nitrogen doping of epitaxial Silicon Carbide
  Journal of Crystal Growth, 2002, 236(1-3), 101-112.
 Web of Science® Times Cited: 42

Örjan Danielsson, Urban Forsberg, Anne Henry and Erik Janzén
  Investigation of the temperature profile in a hot-wall SiC chemical vapour deposition reactor
  Journal of Crystal Growth, 2002, 235(1-4), 352-364.
 Web of Science® Times Cited: 20

Örjan Danielsson, Anne Henry and Erik Janzén
  Growth rate predictions of chemical vapor deposited silicon carbide epitaxial layers
  Journal of Crystal Growth, 2002, 243(1), 170-184.
 Web of Science® Times Cited: 67

Conference Articles

Pitsiri Sukkaew, Lars Ojamäe, Örjan Danielsson, Olle Kordina and Erik Janzén
  Revisiting the Thermochemical Database of Si-C-H System Related to SiC CVD Modeling
  SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014.


Örjan Danielsson, Olle Kordina and Erik Janzén
  Simulations of SiC CVD - Perspectives on the need for surface reaction model improvements
  SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014.


  Fulltext PDF

Erik Janzén, Peder Bergman, Örjan Danielsson, Urban Forsberg, Christer Hallin, Jawad ul-Hassan, Anne Henry, Ivan Gueorguiev Ivanov, Anelia Kakanakova-Gueorguie, Per Persson and Qamar Ul Wahab
  SiC and III-nitride Growth in a Hot-wall CVD Reactor
  Materials Science Forum, ISSN 0255-5476, volume 483-485, 2005.


 Web of Science® Times Cited: 5

Urban Forsberg, Örjan Danielsson, Anne Henry, MK Linnarsson and Erik Janzén
  Aluminum doping of epitaxial silicon carbide grown by hot-wall CVD, Effect of process parameters
  Proceedings of the International Conference on Silicon Carbide and Related Materials, Tsukuba, 2001, 2002.


 Web of Science® Times Cited: 8

Urban Forsberg, Anne Henry, N. Rorsman, J. Eriksson, M. K. Linnarsson, Örjan Danielsson, Liutauras Storasta and Erik Janzén
  Growth and characterisation 4H-SiC MESFET structures grown by Hot-Wall CVD
  Proc. of the MRS 2000 Fall Meeting, 2001.


Urban Forsberg, Anne Henry, Örjan Danielsson, M.K. Linnarsson and Erik Janzén
  Influence of growth parameters on the nitrogen incorporation in 4H- and 6H-SiC epilayers grown by hot-wall chemical vapour deposition
  Proc. of the MRS Spring Meeting 2001, 680E, 2001.


Ph.D. Theses

Örjan Danielsson
  Simulations of Silicon Carbide Chemical Vapor Deposition
  2002.


  Fulltext PDF

* Social media data based on publications from 2011 to present and with a DOI; data delivered by Altmetric.com.