Publications for Örjan Danielsson
Co-author map based on ISI articles 2007-
Journal Articles
Stefano Leone, Olle Kordina, Anne Henry, Shin-ichi Nishizawa, Örjan Danielsson and Erik Janzén
Gas-Phase Modeling of Chlorine-Based Chemical Vapor Deposition of Silicon Carbide
Crystal Growth & Design, 2012, 12(4), 1977-1984.
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M. Pons, E. Blanquet, J.M. Dedulle, P. Wellmann, Örjan Danielsson, P. Ferret, L. di Cioccio, F. Baillet, D. Chaussende and R. Madar
Progress and limits of the numerical simulation of SiC bulk and epitaxial growth processes
Materials Science Forum, 2005, 483-485, .
Web of Science® Times Cited: 3 |
Urban Forsberg, Örjan Danielsson, Anne Henry, M. K. Linnarsson and Erik Janzén
Aluminum doping of epitaxial Silicon Carbide
Journal of Crystal Growth, 2003, 253(1-4), 340-350.
Web of Science® Times Cited: 40 |
Örjan Danielsson, Urban Forsberg and Erik Janzén
Predicted nitrogen doping concentrations in silicon carbide epitaxial layers grown by hot-wall chemical vapor deposition
Journal of Crystal Growth, 2003, 250(3-4), 471-478.
Web of Science® Times Cited: 22 |
Urban Forsberg, Örjan Danielsson, Anne Henry, M. K. Linnarsson and Erik Janzén
Nitrogen doping of epitaxial Silicon Carbide
Journal of Crystal Growth, 2002, 236(1-3), 101-112.
Web of Science® Times Cited: 39 |
Örjan Danielsson, Urban Forsberg, Anne Henry and Erik Janzén
Investigation of the temperature profile in a hot-wall SiC chemical vapour deposition reactor
Journal of Crystal Growth, 2002, 235(1-4), 352-364.
Web of Science® Times Cited: 18 |
Conference Articles
Erik Janzén, Peder Bergman, Örjan Danielsson, Urban Forsberg, Christer Hallin, Jawad ul-Hassan, Anne Henry, Ivan Gueorguiev Ivanov, Anelia Kakanakova-Gueorguie, Per Persson and Qamar Ul Wahab
SiC and III-nitride Growth in a Hot-wall CVD Reactor
Materials Science Forum, ISSN 0255-5476, volume 483-485, 2005.
Web of Science® Times Cited: 5
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Urban Forsberg, Anne Henry, N. Rorsman, J. Eriksson, M. K. Linnarsson, Örjan Danielsson, Liutauras Storasta and Erik Janzén
Growth and characterisation 4H-SiC MESFET structures grown by Hot-Wall CVD
Proc. of the MRS 2000 Fall Meeting, 2001.
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Urban Forsberg, Anne Henry, Örjan Danielsson, M.K. Linnarsson and Erik Janzén
Influence of growth parameters on the nitrogen incorporation in 4H- and 6H-SiC epilayers grown by hot-wall chemical vapour deposition
Proc. of the MRS Spring Meeting 2001, 680E, 2001.
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Ph.D., Lic. Theses
