Publications for Olle Kordina
Co-author map based on ISI articles 2007-

Publications mentioned in social media 2 times*

Keywords

thick temperature substrates silicon sic reactor precursors on-axis off-axis morphology gas-phase gas epitaxial epilayers degrees cvd chloride-based chemistry c/si 4h-sic

Journal Articles

Milan Yazdanfar, Henrik Pedersen, Pitsiri Sukkaew, Ivan Gueorguiev Ivanov, Örjan Danielsson, Olle Kordina and Erik Janzén
  On the use of methane as a carbon precursor in Chemical Vapor Deposition of silicon carbide
 
Altmetric usage: 1

  Journal of Crystal Growth, 2014, 390, 24-29.
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Ian Don Booker, Jawad Ul Hassan, Louise Lilja, Franziska Beyer, Robin Karhu, J. Peder Bergman, Orjan Danielsson, Olof Kordina, Einar Sveinbjörnsson and Erik Janzén
  Carrier Lifetime Controlling Defects Z(1/2) and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC
 
Altmetric usage: 1

  Crystal Growth & Design, 2014, 14(8), 4104-4110.
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Milan Yazdanfar, Pontus Stenberg, Ian Don Booker, Ivan Gueorguiev Ivanov, Olle Kordina, Henrik Pedersen and Erik Janzén
  Process stability and morphology optimization of very thick 4H-SiC epitaxial layers grown by chloride-based CVD
  Journal of Crystal Growth, 2013, 380, 55-60.
 Web of Science® Times Cited: 1

Milan Yazdanfar, Ivan Gueorguiev Ivanov, Henrik Pedersen, Olle Kordina and Erik Janzén
  Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates
  Journal of Applied Physics, 2013, 113(22), .
   Fulltext  PDF  
 Web of Science® Times Cited: 3

Örjan Danielsson, Pitsiri Sukkaew, Milan Yazdanfar, Olle Kordina and Erik Janzén
  Simulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiC
  Materials Science Forum, 2013, 740-742, 213-216.
   Fulltext  PDF  
 Web of Science® Times Cited: 2

Örjan Danielsson, Pitsiri Sukkaew, Lars Ojamäe, Olof Kordina and Erik Janzén
  Shortcomings of CVD modeling of SiC today
  Theoretical Chemistry accounts, 2013, 132(11), 1398.
 Web of Science® Times Cited: 2

Nguyen Son Tien, Xuan Thang Trinh, Andreas Gällström, Stefano Leone, Olle Kordina, Erik Janzén, Krisztian Szasz, Viktor Ivady and Adam Gali
  Electron paramagnetic resonance and theoretical studies of Nb in 4H- and 6H-SiC
  Journal of Applied Physics, 2012, 112(8), 083711.
   Fulltext  PDF  
 Web of Science® Times Cited: 1

Henrik Pedersen, Stefano Leone, Olle Kordina, Anne Henry, Shin-ichi Nishizawa, Yaroslav Koshka and Erik Janzén
  Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications
  Chemical Reviews, 2012, 112(4), 2434-2453.
 Web of Science® Times Cited: 22

Anne Henry, Stefano Leone, Franziska Beyer, Henrik Pedersen, Olle Kordina, Sven Andersson and Erik Janzén
  SiC epitaxy growth using chloride-based CVD
  Physica. B, Condensed matter, 2012, 407(10), 1467-1471.
   Fulltext  PDF  
 Web of Science® Times Cited: 5

Stefano Leone, Olle Kordina, Anne Henry, Shin-ichi Nishizawa, Örjan Danielsson and Erik Janzén
  Gas-Phase Modeling of Chlorine-Based Chemical Vapor Deposition of Silicon Carbide
  Crystal Growth & Design, 2012, 12(4), 1977-1984.
 Web of Science® Times Cited: 3

Stefano Leone, Franziska Beyer, Henrik Pedersen, Sven Andersson, Olle Kordina, Anne Henry and Erik Janzén
  Chlorinated precursor study in low temperature CVD of 4H-SiC
  Thin Solid Films, 2011, 519(10), 3074-3080.
 Web of Science® Times Cited: 10

Stefano Leone, Franziska Beyer, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén
  Growth of smooth 4H-SiC epilayers on 4° off-axis substrates with chloride-based CVD at very high growth rate
  Materials research bulletin, 2011, 46(8), 1272-1275.
 Web of Science® Times Cited: 8

Stefano Leone, Franziska Beyer, Anne Henry, Carl Hemmingsson, Olle Kordina and Erik Janzén
  Chloride-Based SiC Epitaxial Growth toward Low Temperature Bulk Growth
  Crystal Growth & Design, 2010, 10(8), 3743-3751.
 Web of Science® Times Cited: 10

Stefano Leone, Anne Henry, Sven Andersson, Olle Kordina and Erik Janzén
  Optimization of a Concentrated Chloride-Based CVD Process for 4H–SiC Epilayers
  Journal of the Electrochemical Society, 2010, 157(10), H969-H979.
 Web of Science® Times Cited: 6

Stefano Leone, Franziska Beyer, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén
  High growth rate of 4H-SiC epilayers grown on on-axis substrates with different chlorinated precursors
  Crystal Growth & Design, 2010, 10(12), 5334-5340.
 Web of Science® Times Cited: 15

Stefano Leone, Franziska Beyer, Anne Henry, Olle Kordina and Erik Janzén
  Chloride-based CVD of 3C-SiC epitaxial layers on 6H(0001) SiC
  Physica Status Solidi (RRL) – Rapid Research Letters, 2010, 4(11), 305-307.
 Web of Science® Times Cited: 14

Stefano Leone, Henrik Pedersen, Anne Henry, Olle Kordina and Erik Janzén
  Thick homoepitaxial layers grown on on-axis Si-face 6H- and 4H-SiC substrates with HCl addition
  Journal of Crystal Growth, 2009, 312(1), 24-32.
 Web of Science® Times Cited: 13

Stefano Leone, Henrik Pedersen, Anne Henry, Olle Kordina and Erik Janzén
  Improved morphology for epitaxial growth on 4° off-axis 4H-SiC substrates
  Journal of Crystal Growth, 2009, 311(12), 3265-3272.
 Web of Science® Times Cited: 23

Stefano Leone, Henrik Pedersen, Anne Henry, Olle Kordina and Erik Janzén
  Homoepitaxial growth of 4H-SiC on on-axis Si-face substrates using chloride-based CVD
  Materials Science Forum, 2009, 600-603, 107-110.
 Web of Science® Times Cited: 19

Carl Hemmingsson, Tien Son Nguyen, Olle Kordina and Erik Janzén
  Metastable defects in 6H-SiC: Experiments and modeling
  Journal of Applied Physics, 2002, 91(3), 1324.
 Web of Science® Times Cited: 10

Peter Tobias, Amir Baranzahi, Anita Lloyd Spetz, Olle Kordina, Erik Janzén and Ingemar Lundström
  Fast chemical sensing with metal-insulator silicon carbide structures
  IEEE Electron Device Letters, 1997, 18(6), 287-289.
 Web of Science® Times Cited: 66

Olle Kordina, Christer Hallin, Anne Henry, Peder Bergman, Ivan Gueorguiev Ivanov, A. Ellison, Nguyen Tien Son and Erik Janzén
  Growth of SiC by "Hot-Wall" CVD and HTCVD
  Physica status solidi. B, Basic research, 1997, 202(1), 321-334.

Carl Hemmingsson, Nguyen Tien Son, Olle Kordina, Peder Bergman, Erik Janzén, J.L. Lindström, S. Savage and N. Nordell
  Deep-Level Defects in Electron-irradiated 4H SiC Epitaxial Layers
  Journal of Applied Physics, 1997, 81(9), 6155-6159.

Conference Articles

Jawad Hassan, H. Bae, L. Lilja, Ildiko Farkas, I. Kim, Pontus Stenberg, Jianwu Sun, Olle Kordina, Peder Bergman, S. Ha and Erik Janzén
  Fast growth rate epitaxy on 4((degrees)under-bar) off-cut 4-inch diameter 4H-SiC wafers
  SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014.


Pitsiri Sukkaew, Lars Ojamäe, Örjan Danielsson, Olle Kordina and Erik Janzén
  Revisiting the Thermochemical Database of Si-C-H System Related to SiC CVD Modeling
  SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014.


Örjan Danielsson, Olle Kordina and Erik Janzén
  Simulations of SiC CVD - Perspectives on the need for surface reaction model improvements
  SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014.


  Fulltext PDF

Milan Yazdanfar, Henrik Pedersen, Olle Kordina and Erik Janzén
  Effect of process parameters on dislocation density in thick 4H-SiC epitaxial layers grown by chloride-based CVD on 4 degrees off-axis substrates
  SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014.


  Fulltext PDF

Ivan Gueorguiev Ivanov, Milan Yazdanfar, Björn Lundqvist, Jr-Tai Chen, Jawad ul-Hassan, Pontus Stenberg, Rickard Liljedahl, Nguyen Tien Son, Joel W. III Ager, Olle Kordina and Erik Janzén
  High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure (SiC)-Si-28-C-12, Natural and C-13 - Enriched 4H-SIC
  Silicon Carbide and Related Materials 2013, PTS 1 AND 2, 2014.


Milan Yazdanfar, Pontus Stenberg, Ian Don Booker, Ivan Gueorguiev Ivanov, Henrik Pedersen, Olle Kordina and Erik Janzén
  Morphology optimization of very thick 4H-SiC epitaxial layers
  SILICON CARBIDE AND RELATED MATERIALS 2012, 2013.


Ivan Gueorguiev Ivanov, Andreas Gällström, Stefano Leone, Olle Kordina, Nguyen Tien Son, Anne Henry, Viktor Ivády, Adam Gali and Erik Janzén
  Optical properties of the niobium centre in 4H, 6H, and 15R SiC
  SILICON CARBIDE AND RELATED MATERIALS 2012, 2013.


Xuan Thang Trinh, Andreas Gällström, Son Tian Nguyen, Stefano Leone, Olle Kordina and Erik Janzén
  Electron Paramagnetic Resonance Studies of Nb in 6H-SiC
  Materials Science Forum (Volumes 740 - 742), 2013.


Xun Li, Jawad ul Hassan, Olof Kordina, Erik Janzén and Anne Henry
  Surface preparation of 4 degrees off-axis 4H-SIC substrate for epitaxial growth
  Materials Science Forum (Volumes 740 - 742), 2013.


 Web of Science® Times Cited: 1

Björn Lundqvist, Peter Raad, Milan Yazdanfar, Pontus Stenberg, Rickard Liljedahl, Pavel Komarov, Niklas Rorsman, J. Ager III, Olle Kordina, Ivan Gueorguiev Ivanov and Erik Janzén
  Thermal Conductivity of Isotopically Enriched Silicon Carbide
  Thermal Investigations of ICs and Systems (THERMINIC), 2013, 2013.


Erik Janzén and Olle Kordina
  Silicon Carbide - The Power Device for the Future
  2012 18TH INTERNATIONAL WORKSHOP ON THERMAL INVESTIGATIONS OF ICS AND SYSTEMS (THERMINIC), 2012.


Siva Kotamraju, Bharat Krishnan, Franziska C. Beyer, Anne Henry, Olle Kordina, Erik Janzén and Yaroslav Koshka
  Electrical and optical properties of high-purity epilayers grown by the low-temperature chloro-carbon growth method
  Materials Science Forum Vol 717 - 720, 2012.


 Web of Science® Times Cited: 1

Milan Yazdanfar, Stefano Leone, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén
  Carrot defect control in chloride-based CVD through optimized ramp up conditions
  Materials Science Forum Vols 717 - 720, 2012.


 Web of Science® Times Cited: 4

Stefano Leone, Henrik Pedersen, Franziska Beyer, Sven Andersson, Olle Kordina, Anne Henry, Andrea Canino, Francesco La Via and Erik Janzén
  Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles
  Materials Science Forum Vols 717 - 720, 2012.


 Web of Science® Times Cited: 1

Xun Li, Stefano Leone, Sven Andersson, Olle Kordina, Anne Henry and Erik Janzén
  CVD Heteroepitaxial Growth of 3C-SiC on 4H-SiC (0001) Substrates
  Materials Science Forum Vols 717 - 720, 2012.


 Web of Science® Times Cited: 2

Nguyen Tien Son, V. Ivady, Adam Gali, Andreas Gällström, Stefano Leone, Olle Kordina and Erik Janzén
  Identification of Niobium in 4H-SiC by EPR and ab Initio Studies
  Materials Science Forum Vols 717 - 720, 2012.


 Web of Science® Times Cited: 2

Ian Don Booker, Jawad Hassan, Anders Hallén,, Einar Ö. Sveinbjörnsson, Olle Kordina and Peder Bergman
  Comparison of Post-Growth Carrier Lifetime Improvement Methods for 4H-SiC Epilayers
  Materials Science Forum Vols 717 - 720, 2012.


 Web of Science® Times Cited: 1

Anne Henry, Xun Li, Stefano Leone, Olof Kordina and Erik Janzén
  CVD growth of 3C-SiC on 4H-SiC substrate
  Materials Science Forum Vol 711, 2012.


 Web of Science® Times Cited: 1  Fulltext PDF

Stefano Leone, Yuan-Chih Lin, Franziska C. Beyer, Sven Andersson, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén
  Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates
  <em>Materials Science Forum Vols. 679-680 (2011) pp 59-62</em>, 2011.


 Web of Science® Times Cited: 6

Anne Henry, Stefano Leone, Franziska C. Beyer, Sven Andersson, Olle Kordina and Erik Janzén
  Chloride based CVD of 3C-SiC on (0001) α-SiC substrates
  <em>Materials Science Forum Vols. 679-680 (2011) pp 75-78</em>, 2011.


 Web of Science® Times Cited: 6  Fulltext PDF

Stefano Leone, Franziska Beyer, Anne Henry, Olle Kordina and Erik Janzén
  Chloride-based CVD of 3C-SiC Epitaxial Layers on On-axis 6H (0001) SiC Substrates
  AIP Conference Proceedings, Vol. 1292, 2010.


 Web of Science® Times Cited: 1

Anne Henry, Steffano Leone, S. Andersson, Olle Kordina and Erik Janzén
  Concentrated chloride-based epitaxial growth of 4H-SiC
  Materials Science Forum, Vols. 645-648, 2010.


 Web of Science® Times Cited: 2  Fulltext PDF

Stefano Leone, Anne Henry, Olle Kordina and Erik Janzén
  Chloride-based CVD at high growth rates on 3 vicinal off-angles SiC wafers
  ICSCRM2009, 2010.


 Web of Science® Times Cited: 4

Stefano Leone, Henrik Pedersen, Anne Henry, S. Rao, Olle Kordina and Erik Janzén
  Growth of Thick 4H-SiC Epitaxial Layers on On-axis Si-Face Substrates with HCl Addition
  Materials Science Forum, Vols. 615-617, 2009.


 Web of Science® Times Cited: 6

Anne Henry, Stefano Leone, Henrik Pedersen, Olle Kordina and Erik Janzén
  Growth of 4H-SiC Epitaxial Layers on 4° Off-axis Si-face substrates
  Materials Science Forum, Vols. 615-617, 2009.


J Zhang, Olle Kordina, A Ellison and Erik Janzén
  In situ etching of 4H-SiC in H-2 with addition of HCl for epitaxial CVD growth
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 8

J Zhang, Urban Forsberg, M Isacson, A Ellison, Anne Henry, Olle Kordina and Erik Janzén
  Growth characteristics of SiC in a hot-wall CVD reactor with rotation
  Materials Science Forum(ISSN 0255-5476) Volume 389-3, 2002.


 Web of Science® Times Cited: 4

* Social media data based on publications from 2011 to present and with a DOI; data delivered by Altmetric.com.