Publications for Olle Kordina
Co-author map based on ISI articles 2007-
Journal Articles
Nguyen Son Tien, Xuan Thang Trinh, Andreas Gällström, Stefano Leone, Olle Kordina, Erik Janzén, Krisztian Szasz, Viktor Ivady and Adam Gali
Electron paramagnetic resonance and theoretical studies of Nb in 4H- and 6H-SiC
Journal of Applied Physics, 2012, 112(8), 083711.
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Henrik Pedersen, Stefano Leone, Olle Kordina, Anne Henry, Shin-ichi Nishizawa, Yaroslav Koshka and Erik Janzén
Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications
Chemical Reviews, 2012, 112(4), 2434-2453.
Web of Science® Times Cited: 4 |
Anne Henry, Stefano Leone, Franziska Beyer, Henrik Pedersen, Olle Kordina, Sven Andersson and Erik Janzén
SiC epitaxy growth using chloride-based CVD
Physica. B, Condensed matter, 2012, 407(10), 1467-1471.
Fulltext Web of Science® Times Cited: 1 |
Stefano Leone, Olle Kordina, Anne Henry, Shin-ichi Nishizawa, Örjan Danielsson and Erik Janzén
Gas-Phase Modeling of Chlorine-Based Chemical Vapor Deposition of Silicon Carbide
Crystal Growth & Design, 2012, 12(4), 1977-1984.
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Stefano Leone, Franziska Beyer, Henrik Pedersen, Sven Andersson, Olle Kordina, Anne Henry and Erik Janzén
Chlorinated precursor study in low temperature CVD of 4H-SiC
Thin Solid Films, 2011, 519(10), 3074-3080.
Web of Science® Times Cited: 6 |
Stefano Leone, Franziska Beyer, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén
Growth of smooth 4H-SiC epilayers on 4° off-axis substrates with chloride-based CVD at very high growth rate
Materials research bulletin, 2011, 46(8), 1272-1275.
Web of Science® Times Cited: 5 |
Stefano Leone, Anne Henry, Sven Andersson, Olle Kordina and Erik Janzén
Optimization of a Concentrated Chloride-Based CVD Process for 4H–SiC Epilayers
Journal of the Electrochemical Society, 2010, 157(10), H969-H979.
Web of Science® Times Cited: 6 |
Stefano Leone, Franziska Beyer, Anne Henry, Carl Hemmingsson, Olle Kordina and Erik Janzén
Chloride-Based SiC Epitaxial Growth toward Low Temperature Bulk Growth
Crystal Growth & Design, 2010, 10(8), 3743-3751.
Web of Science® Times Cited: 7 |
Stefano Leone, Franziska Beyer, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén
High growth rate of 4H-SiC epilayers grown on on-axis substrates with different chlorinated precursors
Crystal Growth & Design, 2010, 10(12), 5334-5340.
Web of Science® Times Cited: 8 |
Stefano Leone, Franziska Beyer, Anne Henry, Olle Kordina and Erik Janzén
Chloride-based CVD of 3C-SiC epitaxial layers on 6H(0001) SiC
Physica Status Solidi (RRL) – Rapid Research Letters, 2010, 4(11), 305-307.
Web of Science® Times Cited: 8 |
Stefano Leone, Henrik Pedersen, Anne Henry, Olle Kordina and Erik Janzén
Thick homoepitaxial layers grown on on-axis Si-face 6H- and 4H-SiC substrates with HCl addition
Journal of Crystal Growth, 2009, 312(1), 24-32.
Web of Science® Times Cited: 8 |
Stefano Leone, Henrik Pedersen, Anne Henry, Olle Kordina and Erik Janzén
Improved morphology for epitaxial growth on 4° off-axis 4H-SiC substrates
Journal of Crystal Growth, 2009, 311(12), 3265-3272.
Web of Science® Times Cited: 17 |
Carl Hemmingsson, Tien Son Nguyen, Olle Kordina and Erik Janzén
Metastable defects in 6H-SiC: Experiments and modeling
Journal of Applied Physics, 2002, 91(3), 1324.
Web of Science® Times Cited: 10 |
Peter Tobias, Amir Baranzahi, Anita Lloyd Spetz, Olle Kordina, Erik Janzén and Ingemar Lundström
Fast chemical sensing with metal-insulator silicon carbide structures
IEEE Electron Device Letters, 1997, 18(6), 287-289.
Web of Science® Times Cited: 64 |
Olle Kordina, Christer Hallin, Anne Henry, Peder Bergman, Ivan Gueorguiev Ivanov, A. Ellison, Nguyen Tien Son and Erik Janzén
Growth of SiC by "Hot-Wall" CVD and HTCVD
Physica status solidi. B, Basic research, 1997, 202(1), 321-334.
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Carl Hemmingsson, Nguyen Tien Son, Olle Kordina, Peder Bergman, Erik Janzén, J.L. Lindström, S. Savage and N. Nordell
Deep-Level Defects in Electron-irradiated 4H SiC Epitaxial Layers
Journal of Applied Physics, 1997, 81(9), 6155-6159.
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Conference Articles
Xun Li, Jawad ul Hassan, Olof Kordina, Erik Janzén and Anne Henry
Surface preparation of 4° off-axis 4H-SiC substrate for epitaxial growth
Materials Science Forum (Volumes 740 - 742), 2013.
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Xuan Thang Trinh, Andreas Gällström, Son Tian Nguyen, Stefano Leone, Olle Kordina and Erik Janzén
Electron Paramagnetic Resonance Studies of Nb in 6H-SiC
Materials Science Forum (Volumes 740 - 742), 2013.
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Siva Kotamraju, Bharat Krishnan, Franziska C. Beyer, Anne Henry, Olle Kordina, Erik Janzén and Yaroslav Koshka
Electrical and optical properties of high-purity epilayers grown by the low-temperature chloro-carbon growth method
Materials Science Forum Vol 717 - 720, 2012.
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Milan Yazdanfar, Stefano Leone, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén
Carrot defect control in chloride-based CVD through optimized ramp up conditions
Materials Science Forum Vols 717 - 720, 2012.
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Stefano Leone, Henrik Pedersen, Franziska Beyer, Sven Andersson, Olle Kordina, Anne Henry, Andrea Canino, Francesco La Via and Erik Janzén
Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles
Materials Science Forum Vols 717 - 720, 2012.
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Xun Li, Stefano Leone, Sven Andersson, Olle Kordina, Anne Henry and Erik Janzén
CVD Heteroepitaxial Growth of 3C-SiC on 4H-SiC (0001) Substrates
Materials Science Forum Vols 717 - 720, 2012.
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Nguyen Tien Son, V. Ivady, Adam Gali, Andreas Gällström, Stefano Leone, Olle Kordina and Erik Janzén
Identification of Niobium in 4H-SiC by EPR and ab Initio Studies
Materials Science Forum Vols 717 - 720, 2012.
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Ian Don Booker, Jawad Hassan, Anders Hallén,, Einar Ö. Sveinbjörnsson, Olle Kordina and Peder Bergman
Comparison of Post-Growth Carrier Lifetime Improvement Methods for 4H-SiC Epilayers
Materials Science Forum Vols 717 - 720, 2012.
Web of Science® Times Cited: 1
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Anne Henry, Xun Li, Stefano Leone, Olof Kordina and Erik Janzén
CVD growth of 3C-SiC on 4H-SiC substrate
Materials Science Forum Vol 711, 2012.
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Stefano Leone, Yuan-Chih Lin, Franziska C. Beyer, Sven Andersson, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén
Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates
<em>Materials Science Forum Vols. 679-680 (2011) pp 59-62</em>, 2011.
Web of Science® Times Cited: 4
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Anne Henry, Stefano Leone, Franziska C. Beyer, Sven Andersson, Olle Kordina and Erik Janzén
Chloride based CVD of 3C-SiC on (0001) α-SiC substrates
<em>Materials Science Forum Vols. 679-680 (2011) pp 75-78</em>, 2011.
Web of Science® Times Cited: 1 Fulltext
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Stefano Leone, Franziska Beyer, Anne Henry, Olle Kordina and Erik Janzén
Chloride-based CVD of 3C-SiC Epitaxial Layers on On-axis 6H (0001) SiC Substrates
AIP Conference Proceedings, Vol. 1292, 2010.
Web of Science® Times Cited: 1
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Anne Henry, Steffano Leone, S. Andersson, Olle Kordina and Erik Janzén
Concentrated chloride-based epitaxial growth of 4H-SiC
Materials Science Forum, Vols. 645-648, 2010.
Web of Science® Times Cited: 2 Fulltext
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Stefano Leone, Anne Henry, Olle Kordina and Erik Janzén
Chloride-based CVD at high growth rates on 3 vicinal off-angles SiC wafers
ICSCRM2009, 2010.
Web of Science® Times Cited: 1
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Anne Henry, Stefano Leone, Henrik Pedersen, Olle Kordina and Erik Janzén
Growth of 4H-SiC Epitaxial Layers on 4° Off-axis Si-face substrates
Materials Science Forum, Vols. 615-617, 2009.
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Stefano Leone, Henrik Pedersen, Anne Henry, S. Rao, Olle Kordina and Erik Janzén
Growth of Thick 4H-SiC Epitaxial Layers on On-axis Si-Face Substrates with HCl Addition
Materials Science Forum, Vols. 615-617, 2009.
Web of Science® Times Cited: 6
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Stefano Leone, Henrik Pedersen, Anne Henry, Olle Kordina and Erik Janzén
Homoepitaxial Growth of 4H-SiC on On-Axis Si-face Substrates using MTS as Chlorinated Precursors at High Growth Rate
Materials Science Forum, Vols. 600-603, 2009.
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Stefano Leone, Henrik Pedersen, Anne Henry, Olle Kordina and Erik Janzén
Homoepitaxial growth of 4H-SiC on on-axis Si-face substrates using chloride-based CVD
Materials Science Forum, Vols. 600-603, 2009.
Web of Science® Times Cited: 17
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J Zhang, Olle Kordina, A Ellison and Erik Janzén
In situ etching of 4H-SiC in H-2 with addition of HCl for epitaxial CVD growth
Materials Science Forum, Vols. 389-393, 2002.
Web of Science® Times Cited: 5
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J Zhang, Urban Forsberg, M Isacson, A Ellison, Anne Henry, Olle Kordina and Erik Janzén
Growth characteristics of SiC in a hot-wall CVD reactor with rotation
Materials Science Forum(ISSN 0255-5476) Volume 389-3, 2002.
Web of Science® Times Cited: 4
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Ph.D., Lic. Theses
