Publications for Nguyen Tien Son
Co-author map based on ISI articles 2007-

Keywords

vacancy temperature spin silicon sic si shallow resonance paramagnetic hyperfine hf epr donor defects defect center carbon 4h-sic 4h (epr)

Journal Articles

K. Szasz, Xuan Thang Trinh, Nguyen Tien Son, Erik Janzén and A. Gali
  Theoretical and electron paramagnetic resonance studies of hyperfine interaction in nitrogen doped 4H and 6H SiC
  Journal of Applied Physics, 2014, 115(7), 073705.
   Fulltext  PDF  

N. T. Son, J Isoya, I. G. Ivanov, T Oshima and E Janzén
  Magnetic resonance identification ofhydrogen at a zinc vacancy in ZnO
  Journal of Physics: Condensed Matter, 2013, 25, 335804.

Anelia Kakanakova-Georgieva, Daniel Nilsson, Xuan Thang Trinh, Urban Forsberg, Son Tien Nguyen and Erik Janzén
  The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN
  Applied Physics Letters, 2013, 102(13), 132113.
   Fulltext  PDF  
 Web of Science® Times Cited: 2

Koutarou Kawahara, Xuan Thang Trinh, Nguyen Son Tien, Erik Janzén, Jun Suda and Tsunenobu Kimoto
  Investigation on origin of Z(1/2) center in SiC by deep level transient spectroscopy and electron paramagnetic resonance
  Applied Physics Letters, 2013, 102(11), .
 Web of Science® Times Cited: 2

X. T. Trinh, D Nilsson, I. G. Ivanov, E Janzén, A Kakanakova-Georgieva and N.T. Son
  Negative-U behavior of the Si donor in Al0.77Ga0.23N
  Applied Physics Letters, 2013, 103(4), 042101.
   Fulltext  PDF  
 Web of Science® Times Cited: 2

Xuan Thang Trinh, K. Szász, T. Hornos, K. Kawahara, J. Suda, T. Kimoto, A. Gali, Erik Janzén and Nguyen Tien Son
  Negative-U carbon vacancy in 4H-SiC: Assessment of charge correction schemes and identification of the negative carbon vacancy at the quasicubic site
  Physical Review B. Condensed Matter and Materials Physics, 2013, 88(23), 235209-1-235209-13.
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Nguyen Son Tien, Xuan Thang Trinh, Andreas Gällström, Stefano Leone, Olle Kordina, Erik Janzén, Krisztian Szasz, Viktor Ivady and Adam Gali
  Electron paramagnetic resonance and theoretical studies of Nb in 4H- and 6H-SiC
  Journal of Applied Physics, 2012, 112(8), 083711.
   Fulltext  PDF  
 Web of Science® Times Cited: 1

Nguyen Tien Son, Xuan Thang Trinh, L S Lovlie, B. G. Svensson, K. Kawahara, J. Suda, T. Kimoto, T. Umeda, J. Isoya, T. Makino, T. Ohshima and Erik Janzén
  Negative-U System of Carbon Vacancy in 4H-SiC
  Physical Review Letters, 2012, 109(18), 187603.
   Fulltext  PDF  
 Web of Science® Times Cited: 14

Andreas Gällström, Björn Magnusson, Franziska Beyer, Adam Gali, Nguyen Son Tien, Stefano Leone, Ivan Gueorguiev Ivanov, Carl Hemmingsson, Anne Henry and Erik Janzén
  Optical identification and electronic configuration of tungsten in 4H-and 6H-SiC
  Physica. B, Condensed matter, 2012, 407(10), 1462-1466.
 Web of Science® Times Cited: 1

Viktor Ivady, Andreas Gällström, Nguyen Son Tien, Erik Janzén and Adam Gali
  Asymmetric Split-Vacancy Defects in SiC Polytypes: A Combined Theoretical and Electron Spin Resonance Study
  Physical Review Letters, 2011, 107(19), 195501.
   Fulltext  PDF  

Nguyen Son Tien, A. Gali, A. Szabo, M. Bickermann, T. Ohshima, J. Isoya and Erik Janzén
  Defects at nitrogen site in electron-irradiated AlN
  Applied Physics Letters, 2011, 98(24), 242116.
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Nguyen Son Tien, M Bickermann and Erik Janzén
  Shallow donor and DX states of Si in AlN
  APPLIED PHYSICS LETTERS, 2011, 98(9), 092104.
   Fulltext  PDF  
 Web of Science® Times Cited: 9

Nguyen Tien Son, J. Isoya, T Umeda, Ivan Gueorguiev Ivanov, Anne Henry, T. Ohshima and Erik Janzén
  EPR and ENDOR Studies of Shallow Donors in SiC
  Applied Magnetic Resonance, 2010, 39(1-2), 49-85.
 Web of Science® Times Cited: 3

Aron Szabo, Ngyen Tien Son, Erik Janzén and Adam Gali
  Group-II acceptors in wurtzite AlN: A screened hybrid density functional study
  APPLIED PHYSICS LETTERS, 2010, 96(19), 192110.
   Fulltext  PDF  
 Web of Science® Times Cited: 9

Patrick Carlsson, Tien Son Nguyen, A. Gali, J. Isoya, N. Morishita, T. Ohshima, B. Magnusson and Erik Janzén
  EPR and ab initio calculation study on the EI4 center in 4H and 6H-SiC
  Physical Review B. Condensed Matter and Materials Physics, 2010, 82(23), 235203.
   Fulltext  PDF  
 Web of Science® Times Cited: 1

Erik Janzén, Adam Gali, Patrick Carlsson, Andreas Gällström, Björn Magnusson and Nguyen Tien Son
  The Silicon vacancy in SiC
  Materials Science Forum, 2009, 615-617, 347-352.
 Web of Science® Times Cited: 3

Erik Janzén, Adam Gali, Patrick Carlsson, Andreas Gällström, Björn Magnusson and Nguyen Tien Son
  The silicon vacancy in SiC
  Physica. B, Condensed matter, 2009, 404(22), 4354-4358.
 Web of Science® Times Cited: 8

Tien Son Nguyen, Carl Hemmingsson, T. Paskova, K.R. Evans, A. Usui, N. Morishita, T. Ohshima, J. Isoya, Bo Monemar and Erik Janzén
  Identification of the gallium vacancy-oxygen pair defect in GaN
  Physical Review B. Condensed Matter and Materials Physics, 2009, 80(15), 153202.
 Web of Science® Times Cited: 9

Son Tien Nguyen, Erik Janzén, J. Isoya, N. Morishita, H. Hanaya, H. Takizawa, T. Ohshima and Adam Gali
  Identification of a Frenkel-pair defect in electron-irradiated 3C SiC
  Physical Review B. Condensed Matter and Materials Physics, 2009, 80, 125201.
 Web of Science® Times Cited: 7

Patrick Carlsson, Nguyen Son Tien, Franziska Beyer, Henrik Pedersen, J Isoya, N Morishita, T Ohshima and Erik Janzén
  Deep levels in low-energy electron-irradiated 4H-SiC
  PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2009, 3(4), 121-123.
 Web of Science® Times Cited: 7

J. Isoya, T. Umeda, N. Mizuochi, Son Tien Nguyen, Erik Janzén and T. Ohshima
  EPR identification of intrinsic defects in SiC
  Physica status solidi. B, Basic research, 2008, 245(7), 1298-1314.
 Web of Science® Times Cited: 23

E Broitman, Gueorgui Kostov Gueorguiev, Andrej Furlan, Tien Nguyen Son, A J Gellman, Sven Stafström and Lars Hultman
  Water adsorption on fullerene-like carbon nitride overcoats
  Thin Solid Films, 2008, 517(3), 1106-1110.
 Web of Science® Times Cited: 11

T. Hornos, Son Tien Nguyen, Erik Janzén and A. Gali
  Theoretical study of small silicon clusters in 4H-SiC
  , 2007, , .
 Web of Science® Times Cited: 5

R. Aavikko, K. Saarinen, F. Tuomisto, Björn Magnusson, Son Tien Nguyen and Erik Janzén
  Clustering of vacancy defects in high-purity semi-insulating SiC
  Physical Review B. Condensed Matter and Materials Physics, 2007, 75(8), 085208.
 Web of Science® Times Cited: 18

Son Tien Nguyen, Ivan Gueorguiev Ivanov, A. Kuznetsov, B.G. Svensson, Qing Xiang Zhao, Magnus Willander, N. Morishita, T. Ohshima, H. Itoh, J. Isoya, Erik Janzén and Rositsa Yakimova
  Recombination centers in as-grown and electron-irradiated ZnO substrates
  Journal of Applied Physics, 2007, 102(9), .
 Web of Science® Times Cited: 10

Son Tien Nguyen, Patrick Carlsson, Andreas Gällström, Björn Magnusson and Erik Janzén
  Deep levels and carrier compensation in V-doped semi-insulating 4H-SiC
  Applied Physics Letters, 2007, 91(20), .
 Web of Science® Times Cited: 3

A. Gali, T. Hornos, Son Tien Nguyen, Erik Janzén and W.J. Choyke
  Ab initio supercell calculations on aluminum-related defects in SiC
  , 2007, , .
 Web of Science® Times Cited: 15

Son Tien Nguyen, Patrick Carlsson, Jawad ul-Hassan, Björn Magnusson and Erik Janzén
  Defects and carrier compensation in semi-insulating 4H-SiC substrates
  Physical Review B Condensed Matter, 2007, 75(15), .
 Web of Science® Times Cited: 31

Son Tien Nguyen, Ivan Gueorguiev Ivanov, A. Yu. Kuznetsov, B.G. Svensson, Qing Xiang Zhao, Magnus Willander, M.N. Morishita, T. Ohshima, H. Itoh, J. Isoya, Erik Janzén and Rositsa Yakimova
  Magnetic resonance studies of defects in electron-irradiated ZnO substrates
  Physica. B, Condensed matter, 2007, 401-402, 507-510.
 Web of Science® Times Cited: 2

Son Tien Nguyen, Anne Henry, J. Isoya, M. Katagiri, A. Gali and Erik Janzén
  Electron paramagnetic resonance and theoretical studies of shallow phosphorous centers in 3C-, 4H-, and 6H-SiC
  , 2006, , .
 Web of Science® Times Cited: 25

Rositsa Yakimova, Gholam Reza Yazdi, Son Tien Nguyen, Ivan Gueorguiev Ivanov, Mikael Syväjärvi, S. Sun, G. Tompa, A. Kuznetsov and B. Svensson
  Optical and Morphological Features of Bulk and Homoepitaxial ZnO
  Superlattices and Microstructures, 2006, 39, 247-256.
 Web of Science® Times Cited: 10

T. Umeda, Son Tien Nguyen, J. Isoya, Erik Janzén, T. Ohshima, N. Morishita, H. Itoh, A. Gali and M. Bockstedte
  Identification of the carbon antisite-vacancy pair in 4H-SiC
  , 2006, , .
 Web of Science® Times Cited: 45

Son Tien Nguyen, Patrick Carlsson, Jawad ul-Hassan, Erik Janzén, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, N. Morishita, T. Ohshima and H. Itoh
  Divacancy in 4H-SiC
  Physical review letters / publ. by the American Physical Society, 2006, 96, 055501-1.
 Web of Science® Times Cited: 70

A. Gali, Son Tien Nguyen and Erik Janzén
  Electrical characterization of metastable carbon clusters in SiC - a theoretical Study
  Physical review. B, Condensed matter and materials physics, 2006, 73, 033204-1-033204-4.
 Web of Science® Times Cited: 17

T Umeda, Y. Ishitsuka, J. Isoya, Son Tien Nguyen, Erik Janzén, N. Morishita, T. Ohshima and H. Itoh
  EPR and theoretical studies of negatively charged carbon vacancy in 4H-SiC
  , 2005, , .
 Web of Science® Times Cited: 35

A Gali, P Deák, Son Tien Nguyen and Erik Janzén
  Possibility for the electrical activation of the carbon antisite by hydrogen in SiC
  , 2005, , .
 Web of Science® Times Cited: 3

A Gali, T Hornos, P Deák, Son Tien Nguyen, Erik Janzén and W Choyke
  Activation of shallow boron acceptor in CB coimplanted silicon carbide: A theoretical study
  Applied Physics Letters, 2005, 86(10), 102108.
 Web of Science® Times Cited: 11

T. Umeda, J. Isoya, N. Morishita, T. Ohshima, A. Gali, P. Deák, Son Tien Nguyen and Erik Janzén
  EPR and theoretical studies of positively charged carbon vacancy in 4H-SiC
  , 2004, , .
 Web of Science® Times Cited: 23

Son Tien Nguyen, Erik Janzén, J Isoya and S Yamasaki
  Hyperfine interaction of the nitrogen donor in 4H-SiC
  , 2004, , .
 Web of Science® Times Cited: 8

B Aradi, P Deák, A Gali, Son Tien Nguyen and Erik Janzén
  Diffusion of hydrogen in perfect, p-type doped, and radiation-damaged 4H-SiC
  , 2004, , .
 Web of Science® Times Cited: 13

Z Zolnai, Son Tien Nguyen, Christer Hallin and Erik Janzén
  Annealing behavior of the carbon vacancy in electron-irradiated 4H-SiC
  Journal of Applied Physics, 2004, 96(4), 2406-2408.
 Web of Science® Times Cited: 28

Adam Gali, P Deak, E Rauls, Tien Son Nguyen, Ivan Gueorguiev Ivanov, Fredrik Carlsson, Erik Janzén and WJ Choyke
  Correlation between the antisite pair and the D-I center in SiC
  Physical Review B. Condensed Matter and Materials Physics, 2003, 67(15), .
 Web of Science® Times Cited: 49

Adam Gali, P Deak, P Ordejon, Tien Son Nguyen, Erik Janzén and WJ Choyke
  Aggregation of carbon interstitials in silicon carbide: A theoretical study
  Physical Review B. Condensed Matter and Materials Physics, 2003, 68(12), .
 Web of Science® Times Cited: 69

J. Zhang, Liutauras Storasta, Peder Bergman, Tien Son Nguyen and Erik Janzén
  Electrically active defects in n-type 4H-silicon carbide grown in a vertical hot-wall reactor
  Journal of Applied Physics, 2003, 93(8), 4708-4714.
 Web of Science® Times Cited: 93

Adam Gali, P. Deak, Tien Son Nguyen and Erik Janzén
  Hydrogen passivation of nitrogen in SiC
  Applied Physics Letters, 2003, 83(7), 1385-1387.
 Web of Science® Times Cited: 15

Tien Son Nguyen, Z Zolnai and Erik Janzén
  Silicon vacancy related TV2a center in 4H-SiC
  Physical Review B. Condensed Matter and Materials Physics, 2003, 68(20), .
 Web of Science® Times Cited: 14

Tien Son Nguyen, Christer Hallin and Erik Janzén
  Hole effective masses in 6H-SiC from optically detected cyclotron resonance
  Physical Review B. Condensed Matter and Materials Physics, 2002, 66(4), .
 Web of Science® Times Cited: 5

Matthias Wagner, NQ Thinh, Tien Son Nguyen, Weimin Chen, Erik Janzén, PG Baranov, EN Mokhov, Christer Hallin and JL Lindstrom
  Ligand hyperfine interaction at the neutral silicon vacancy in 4H- and 6H-SiC
  Physical Review B. Condensed Matter and Materials Physics, 2002, 66(15), .
 Web of Science® Times Cited: 26

Carl Hemmingsson, Tien Son Nguyen, Olle Kordina and Erik Janzén
  Metastable defects in 6H-SiC: Experiments and modeling
  Journal of Applied Physics, 2002, 91(3), 1324.
 Web of Science® Times Cited: 10

Tien Son Nguyen, Björn Magnusson and Erik Janzén
  Photoexcitation-electron-paramagnetic-resonance studies of the carbon vacancy in 4H-SiC
  Applied Physics Letters, 2002, 81(21), 3945-3947.
 Web of Science® Times Cited: 54

Tien Son Nguyen, PN Hai and Erik Janzén
  Carbon vacancy-related defect in 4H and 6H SiC
  Physical Review B. Condensed Matter and Materials Physics, 2001, 63(20), .
 Web of Science® Times Cited: 80

Tien Son Nguyen, PN Hai and Erik Janzén
  Silicon antisite in 4H SiC
  Physical Review Letters, 2001, 87(4), .
 Web of Science® Times Cited: 29

B. Aradi, P. Deak, Tien Son Nguyen, Erik Janzén, W.J. Choyke and R.P. Devaty
  Impurity-controlled dopant activation: Hydrogen-determined site selection of boron in silicon carbide
  Applied Physics Letters, 2001, 79(17), 2746-2748.
 Web of Science® Times Cited: 19

Adam Gali, B Aradi, P Deak, WJ Choyke and Tien Son Nguyen
  Overcoordinated hydrogens in the carbon vacancy: Donor centers of SiC
  Physical Review Letters, 2000, 84(21), 4926-4929.
 Web of Science® Times Cited: 26

E. Sörman, Son Tien Nguyen, Weimin Chen, O. Kordina, Christer Hallin and Erik Janzén
  Silicon vacancy related defect in 4H and 6H SiC
  Physical Review B. Condensed Matter and Materials Physics, 2000, 61(4), 2613-2620.
 Web of Science® Times Cited: 122

B. K. Meyer, D. M. Hofmann, D. Volm, Weimin Chen, Son Tien Nguyen and Erik Janzén
  Optically detected cyclotron resonance investigations on 4H and 6H SiC: Band-structure and transport properties
  Physical Review B. Condensed Matter and Materials Physics, 2000, 61(7), 4844-4849.
 Web of Science® Times Cited: 14

Son Tien Nguyen, P. N. Hai, Weimin Chen, Christer Hallin, Bo Monemar and Erik Janzén
  Hole effective masses in 4H SiC
  Physical Review B. Condensed Matter and Materials Physics, 2000, 61(16), .
 Web of Science® Times Cited: 15

Son Tien Nguyen, Weimin Chen, J. L. Lindström, Bo Monemar and Erik Janzén
  A complex defect related to the carbon vacancy in 4H and 6H SiC
  Physica Scripta, 1999, T79, 46-49.

Son Tien Nguyen, P. N. Hai, Matthias Wagner, Weimin Chen, A. Ellison, Christer Hallin, Bo Monemar and Erik Janzén
  Optically detected magnetic resonance studies of intrinsic defects in 6H-SiC
  Semiconductor Science and Technology, 1999, 14(12), 1141-1146.

Son Tien Nguyen, A. Ellison, Björn Magnusson, M. F. MacMillan, Weimin Chen, Bo Monemar and Erik Janzén
  Photoluminescence and Zeeman effect in chromium-doped 4H and 6H SiC
  Journal of Applied Physics, 1999, 86(8), 4348.

Son Tien Nguyen, P. N. Hai, P. T. Huy, T. Gregorkiewicz, C. A. J. Ammerlaan, J. L. Lindström, Weimin Chen, Bo Monemar and Erik Janzén
  Electron-paramagnetic-resonance studies of defects in electron-irradiated p-type 4H and 6H SiC
  Physica. B, Condensed matter, 1999, 273-274, 655-658.

Olle Kordina, Christer Hallin, Anne Henry, Peder Bergman, Ivan Gueorguiev Ivanov, A. Ellison, Nguyen Tien Son and Erik Janzén
  Growth of SiC by "Hot-Wall" CVD and HTCVD
  Physica status solidi. B, Basic research, 1997, 202(1), 321-334.

Carl Hemmingsson, Nguyen Tien Son, Olle Kordina, Peder Bergman, Erik Janzén, J.L. Lindström, S. Savage and N. Nordell
  Deep-Level Defects in Electron-irradiated 4H SiC Epitaxial Layers
  Journal of Applied Physics, 1997, 81(9), 6155-6159.

Chapters in Books

Erik Janzén, Adam Gali, Anne Henry, Ivan Gueorguiev Ivanov, Björn Magnusson and Son Tien Nguyen
  Defects in SiC
  Defects in Microelectronic Materials and Devices, Taylor and Francis LLC, 2008, 770.


Son Tien Nguyen, Matthias Wagner, Carl Hemmingsson, Liutauras Storasta, Björn Magnusson, Weimin Chen, S. Greulich-Weber, J.-M. Spaeth and Erik Janzén
  Electronic structure of deep defects in SiC
  Silicon Carbide: Recent Major Advances, Springer Verlag, 2004, -899.


Son Tien Nguyen, C. Persson, Ulf Lindefelt, Weimin Chen, Erik Janzén, B. K. Meyer and D. M. Hofmann
  Cyclotron resonance studies of effective masses and band structure in SiC
  Silicon Carbide: Recent Major Advances, Springer Verlag, 2004, -899.


T Egilsson, Ivan Gueorguiev Ivanov, Nguyen Tien Son, Anne Henry, Peder Bergman and Erik Janzén
  Exciton and defect photoluminescence from SiC
  Silicon carbide and related materials 2002: ECSCRM 2002 proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden, , 2003, 81-120.


Conference Articles

Ivan Gueorguiev Ivanov, Andreas Gällström, Stefano Leone, Olle Kordina, Nguyen Tien Son, Anne Henry, Viktor Ivády, Adam Gali and Erik Janzén
  Optical properties of the niobium centre in 4H, 6H, and 15R SiC
  SILICON CARBIDE AND RELATED MATERIALS 2012, 2013.


Xuan Thang Trinh, Andreas Gällström, Son Tian Nguyen, Stefano Leone, Olle Kordina and Erik Janzén
  Electron Paramagnetic Resonance Studies of Nb in 6H-SiC
  Materials Science Forum (Volumes 740 - 742), 2013.


V. Ivady, B. Somogyi, V. Zolyomi, Andreas Gällström, Nguyen Tien Son, Erik Janzén and Adam Gali
  Transition Metal Defects in Cubic and Hexagonal Polytypes of SiC: Site Selection, Magnetic and Optical Properties from ab initio Calculations
  Materials Science Forum Vol 717 - 720, 2012.


Andreas Gällström, Björn Magnusson, Franziska Beyer, Adam Gali, Nguyen Tien Son, Stefano Leone, Ivan G. Ivanov, Anne Henry, Carl Hemmingsson and Erik Janzén
  Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC
  Materials Science Forum Vols 717 - 720, 2012.


Nguyen Tien Son, V. Ivady, Adam Gali, Andreas Gällström, Stefano Leone, Olle Kordina and Erik Janzén
  Identification of Niobium in 4H-SiC by EPR and ab Initio Studies
  Materials Science Forum Vols 717 - 720, 2012.


 Web of Science® Times Cited: 2

Nguyen Tien Son, M Bickermann and Erik Janzén
  Silicon in AlN: shallow donorand DX behaviors
  physica status solidi (c)P hys. Status Solidi C 8, No. 7–8, 2167–2169 (2011) / DOI 10.1002/pssc.201001030, 2011.


 Web of Science® Times Cited: 3  Fulltext PDF

Patrick Carlsson, Nguyen Tien Son, Björn Magnusson, J. Isoya, N. Morishita, T. Ohshima and Erik Janzén
  The EI4 EPR centre in 6H SiC
  Physica Scripta, Vol. T141, 2010.


Nguyen Tien Son, Carl Hemmingsson, N. Morishita, T. Ohshima, Tanja Paskova, K.R. Evans, A Usui, J. Isoya, Bo Monemar and Erik Janzén
  Radiation-induced defects in GaN
  Physica Scripta, Vol. T141, 2010.


 Web of Science® Times Cited: 2

Adam Gali, Andreas Gällström, Nguyen Tien Son and Erik Janzén
  Theory of neutral divacancy in SiC: a defect for spintronics
  Materials Science Forum, Vols. 645-648, 2010.


 Web of Science® Times Cited: 4  Fulltext PDF

A Scholle, S Greulich-Weber, D J As, Ch Mietze, Tien Son Nguyen, Carl Hemmingsson, Bo Monemar, Erik Janzén, U Gerstmann, S Sanna, E Rauls and W G Schmidt
  Magnetic characterization of conductance electrons in GaN
  Physica Status Solidi, Vol. 247, 2010.


 Web of Science® Times Cited: 2

Tien Son Nguyen, Patrick Carlsson, J. Isoya, N. Morishita, T. Ohshima, Björn Magnusson and Erik Janzén
  The carbon vacancy related EI4 defect in 4H-SiC
  Materials Science Forum. Vols. 645-648, 2010.


 Web of Science® Times Cited: 1  Fulltext PDF

Patrick Carlsson, Son Tien Nguyen, Henrik Pedersen, J. Isoya, N. Morishita, T. Ohshima, H. Itoh and Erik Janzén
  Photo-EPR Studies on Low-Energy Electron-irradiated 4H-SiC
  Materials Science Forum, Vols. 615-617, 2009.


Son Tien Nguyen, J. Isoya, N. Morishita, T. Ohshima, H. Itoh, Adam Gali and Erik Janzén
  Defects introduced by electron-irradiation at low temperatures in SiC
  Materials Science Forum Vols. 615-617, 2009.


J. Isoya, T. Umeda, N. Mizuochi, Son Tien Nguyen, Erik Janzén and T. Ohshima
  EPR Identification of Defects and Impurities in SiC: To Be Decisive
  Materials Science Forum, Vols. 600-603, 2009.


A. Gali, T. Hornos, Son Tien Nguyen and Erik Janzén
  New type of defects explored by theory: silicon interstitial clusters in SiC
  Materials Science Forum, Vols. 600-603, 2009.


Patrick Carlsson, Son Tien Nguyen, Björn Magnusson and Erik Janzén
  Intrinsic Defects in HPSI 6H-SiC: an EPR Study
  Materials Science Forum, Vols. 600-603, 2009.


 Web of Science® Times Cited: 2

Son Tien Nguyen, Patrick Carlsson, Andreas Gällström, Björn Magnusson and Erik Janzén
  Deep Levels Responsible for Semi-insulating Behaviour in Vanadium-doped 4H-SiC Substrates
  Materials Science Forum, Vols. 600-603, 2009.


Son Tien Nguyen, Ivan Gueorguiev Ivanov, A. Kuznetsov, B.G. Svensson, Q.X. Zhao, Magnus Willander, M.N. Morishita, T. Ohshirma, H. Itoh, Erik Janzén and Rositsa Yakimova
  Common point defects in as-grown ZnO substrates studied by optical detection of magnetic resonance
  Journal of Crystal Growth, Vol. 310, 2008.


 Web of Science® Times Cited: 1

Patrick Carlsson, Kaneez Rabia, Son Tien Nguyen, T. Ohshima, N. Morishita, H. Itoh, J. Isoya and Erik Janzén
  Electron paramagnetic resonance study on n-type electron-irradiated 3C-SiC
  Proc. of IVC-17/ICSS-13 and ICNT 2007, 2008.


Son Tien Nguyen and Erik Janzén
  EPR characterization of defects in SiC
  49th Rocky Mountain Conference on Analytical Chemistry,2007, 2007.


Son Tien Nguyen, Patrick Carlsson, Andreas Gällström, Björn Magnusson and Erik Janzén
  Prominent defects in semi-insulating SiC substrates
  Physica B, Vol. 401-402, 2007.


 Web of Science® Times Cited: 9

Son Tien Nguyen, Patrick Carlsson, Björn Magnusson and Erik Janzén
  Intrinsic Defects in Semi-Insulating SiC: Deep Levels and their Roles in Carrier Compensation
  Materials Science Forum, Vols. 556-557, 2007.


 Web of Science® Times Cited: 3

T. Hornos, A. Gali, Son Tien Nguyen and Erik Janzén
  A Theoretical Study on Aluminium-Related Defects in SiC
  Materials Science Forum, Vols. 556-557, 2007.


 Web of Science® Times Cited: 1

Andreas Gällström, Björn Magnusson, Patrick Carlsson, Son Tien Nguyen, Anne Henry, Franziska Beyer, Mikael Syväjärvi, Rositsa Yakimova and Erik Janzén
  Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC
  Materials Science Forum, vol. 556-557, 2007.


 Web of Science® Times Cited: 4

Patrick Carlsson, Son Tien Nguyen, T. Umeda, J. Isoya and Erik Janzén
  Deep Acceptor Levels of the Carbon Vacancy-Carbon Antisite Pairs in 4H-SiC
  Materials Science Forum, Vols. 556-557, 2007.


 Web of Science® Times Cited: 3

Erik Janzén, Tien Son Nguyen, Björn Magnusson and A Ellison
  Intrinsic defects in high-purity SiC
  Microelectronic Engineering, Vol. 83, 2006.


 Web of Science® Times Cited: 12

J Isoya, M Katagiri, T Umeda, S Koizumi, H Kanda, Tien Son Nguyen, Anne Henry, Adam Gali and Erik Janzén
  Pulsed EPR studies of phosphorus shallow donors in diamond and SiC
  Physica B, Vols. 376-377, 2006.


 Web of Science® Times Cited: 8

Tien Son Nguyen, T Umeda, J Isoya, Adam Gali, M Bockstedte, Björn Magnusson, A Ellison, N Morishita, T Ohshima, H Itoh and Erik Janzén
  Identification of divacancies in 4H-SiC
  Physica B: Condensed Matter, Vols. 376-377, 2006.


 Web of Science® Times Cited: 2

T. Umeda, Son Tien Nguyen, J. Isoya, N. Morishita, T. Ohshima, H. Itoh and Erik Janzén
  Electron paramagnetic resonance study of the HEI4/SI5 center in 4H-SiC
  Mater. Sci. Forum, Vol. 527-529, 2006.


M. Bockstedte, A. Gali, T. Umeda, Son Tien Nguyen, J. Isoya and Erik Janzén
  Signature of the negative Carbon Vacancy-Antisite complex
  Materials Science Forum, Vols. 527-529, 2006.


Son Tien Nguyen, Patrick Carlsson, Björn Magnusson and Erik Janzén
  Characterization of semi-insulating SiC
  Mater. Res. Soc. Symp. Proc. 911, 2006.


J. Isoya, M. Katagiri, T. Umeda, Son Tien Nguyen, Anne Henry, A. Gali, N. Morishita, T. Ohshima, H. Itoh and Erik Janzén
  Shallow P donors in 3C-, 4H- and 6H-SiC
  Materials Science Forum, Vols. 527-529, 2006.


Son Tien Nguyen, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, Björn Magnusson, A. Ellison, N. Morishita, T. Ohshima, H. Itoh and Erik Janzén
  Divacancy model for P6/P7 centers in 4H- and 6H-SiC
  Materials Science Forum, Vols. 527-529, 2006.


A. Gali, M. Bockstedte, Son Tien Nguyen, T. Umeda, J. Isoya and Erik Janzén
  Divacancy and its identification
  Materials Science Forum, Vols. 527-529, 2006.


 Web of Science® Times Cited: 5

Björn Magnusson, R. Aavikko, K. Saarinen, Son Tien Nguyen and Erik Janzén
  Optical Studies of Deep Centers in Semi-Insulating SiC
  Materials Science Forum, Vols. 527-529, 2006.


Erik Janzén, Anne Henry and Son Tien Nguyen
  Material aspects on SiC
  International Workshop Nanohard 2005, 2005.


Son Tien Nguyen, Anne Henry, J. Isoya and Erik Janzén
  Electron Paramagnetic Resonance of Shallow Phosphorous Centers in 4H- and 6H-SiC
  Materials Science Forum, Vols. 483-485, 2005.


 Web of Science® Times Cited: 4

Son Tien Nguyen, J. Isoya, S. Yamasaki and Erik Janzén
  Hyperfine interaction of the nitrogen donor in 4H-SiC studied by pulsed-ENDOR
  Materials Science Forum, Vols. 483-485, 2005.


 Web of Science® Times Cited: 1

A. Gali, T. Hornos, P. Deák, Son Tien Nguyen, Erik Janzén and W. Choyke
  Theoretical investigations of complexes of p-type dopants and carbon interstitial in SiC: bistable, negatice-U defects
  Materials Science Forum, Vols. 483-485, 2005.


 Web of Science® Times Cited: 3

Z. Zolnai, Son Tien Nguyen, Björn Magnusson, Christer Hallin and Erik Janzén
  Annealing behaviour of vacancy- and antisite-related defects in electron-irradiated 4H-SiC
  Mater. Sci. Forum, Vol. 457-460, 2004.


 Web of Science® Times Cited: 10

Son Tien Nguyen, Björn Magnusson, Z. Zolnai, A. Ellison and Erik Janzén
  Defects in high-purity semi-insulating SiC
  Mater. Sci. Forum, Vol. 457-460, 2004.


 Web of Science® Times Cited: 54

Adam Gali, P. Deák, E. Rauls, Son Tien Nguyen, Ivan Gueorguiev Ivanov, Fredrik Carlsson, Erik Janzén and W.J. Choyke
  Antisites as possible origin of irradiation induced photoluminescence centers in SiC: A theoretical study on clusters of antisites and carbon interstitials in 4H-SiC
  Mater. Sci. Forum, Vol. 457-460, 2004.


 Web of Science® Times Cited: 1

Erik Janzén, Ivan Gueorguiev Ivanov, Son Tien Nguyen, Björn Magnusson, Anne Henry and J. Isoya
  Defects in SiC
  International Seminar on SiC and Related Materials,2004, 2004.


Nguyen Son, Björn Magnusson, Z. Zolnai, A. Ellison and Erik Janzén
  Magnetic Resonance of Large-area Semi-insulating SiC Substrates
  Bulletin of The American Physical Society Meeting, Vol. 48, 2003.


P Deak, Adam Gali, Z Hajnal, T Frauenheim, Tien Son Nguyen, Erik Janzén, WJ Choyke and P Ordejon
  A cause for SiC/SiO2 interface states: The site selection of oxygen in SiC
  Materials Science Forum, Vols. 433-436, 2003.


Adam Gali, P Deak, Tien Son Nguyen, Erik Janzén, HJ von Bardeleben and JL Monge
  Calculation of hyperfine constants of defects in 4H-SiC
  Materials Science Forum, Vols. 433-436, 2003.


Tien Son Nguyen, Björn Magnusson, Z Zolnai, A Ellison and Erik Janzén
  Defects in semi-insulating SiC substrates
  Materials Science Forum, Vols. 433-436, 2003.


A Ellison, Björn Magnusson, Tien Son Nguyen, Liutauras Storasta and Erik Janzén
  HTCVD grown semi-insulating SiC substrates
  Materials Science Forum, Vols. 433-436, 2003.


Adam Gali, P. Deak, E. Rauls, Tien Son Nguyen, Ivan Gueorguiev Ivanov, Fredrik Carlsson, Erik Janzén and W.J. Choyke
  Anti-site pair in SiC: A model of the DI center
  Physica B, 2003.


 Web of Science® Times Cited: 7

Erik Janzén, Ivan Gueorguiev Ivanov, Son Tien Nguyen, Björn Magnusson, Z Zolnai, Anne Henry, Peder Bergman, Liutauras Storasta and Fredrik Carlsson
  Defects in SiC
  Physica B: Condensed Matter, Vols. 340-342, 2003.


 Web of Science® Times Cited: 14

B Aradi, Adam Gali, P Deak, Tien Son Nguyen and Erik Janzén
  Impurity-controlled dopant activation - The role of hydrogen in p-type doping of SiC
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 3

Tien Son Nguyen, Christer Hallin and Erik Janzén
  Hole and electron effective masses in 6H-SiC studied by optically detected cyclotron resonance
  Materials Science Forum(ISSN 0255-5476), Vols. 389-393, 2002.


 Web of Science® Times Cited: 1

Matthias Wagner, NQ Thinh, Nguyen Tien Son, PG Baranov, EN Mokhov, Christer Hallin, Weimin Chen and Erik Janzén
  The neutral silicon vacancy in SiC: Ligand hyperfine interaction
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 8

Adam Gali, P Deak, Tien Son Nguyen and Erik Janzén
  Theoretical investigation of an intrinsic defect in SiC
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 7

Björn Magnusson, A. Ellison, Son Tien Nguyen and Erik Janzén
  Deep-level luminescence at 1.0 eV in 6H SiC
  Mat. Res. Soc. Symp. Proc., Vol. 640, 2001.


Tien Son Nguyen, PN Hai and Erik Janzén
  Intrinsic defects in silicon carbide polytypes
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 39

B Aradi, Adam Gali, P Deak, E Rauls, T Frauenheim and Tien Son Nguyen
  Boron centers in 4H-SiC
  Materials science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 19

Björn Magnusson, A Ellison, Fredrik Carlsson, Tien Son Nguyen and Erik Janzén
  As-grown and process-induced intrinsic deep-level luminescence in 4H SiC
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 4

B. Aradi, Adam Gali, P. Deak, Tien Son Nguyen and Erik Janzén
  Passivation of p-type dopants in 4H-SiC by hydrogen
  Physica B, Vols. 308-310, 2001.


 Web of Science® Times Cited: 10

P Deak, Adam Gali, B Aradi, Tien Son Nguyen, Erik Janzén and WJ Choyke
  Vacancies and their complexes with H in SiC
  Materials Science Forum, Vols. 338-343, 2000.


 Web of Science® Times Cited: 5

Björn Magnusson, Matthias Wagner, Tien Son Nguyen and Erik Janzén
  Vanadium-related center in 4H silicon carbide
  Materials Science Forum, Vols. 338-343, 2000.


 Web of Science® Times Cited: 1

A Ellison, J Zhang, W Magnusson, Anne Henry, Qamar Ul Wahab, Peder Bergman, Carl Hemmingsson, Tien Son Nguyen and Erik Janzén
  Fast SiC epitaxial growth in a chimney CVD reactor and HTCVD crystal growth developments
  Materials science Forum, Vols. 338-342, 2000.


 Web of Science® Times Cited: 29

B. K. Meyer, D. M. Hofmann, D. Volm, Weimin Chen, Son Tien Nguyen and Erik Janzén
  Bandstructure and transport properties of 4H- and 6H-SiC: optically detected cyclotron resonance investigations
  Materials Science Forum, Vol. 338 - 342, 2000.


 Web of Science® Times Cited: 1

Son Tien Nguyen, P. N. Hai, A. Shuja, Weimin Chen, J. L. Lindström, Bo Monemar and Erik Janzén
  The Carbon Vacancy Pair in 4H and 6H SiC
  Materials Science Forum, Vol. 338 - 342, 2000.


 Web of Science® Times Cited: 6

Son Tien Nguyen, P. N. Hai, Weimin Chen, Christer Hallin, Bo Monemar and Erik Janzén
  Hole Effective Masses in 4H SiC Determined by Optically Detected Cyclotron Resonance
  Materials Science Forum, Vol. 338 - 342, 2000.


Son Tien Nguyen, Weimin Chen, J. L. Lindström, Bo Monemar and Erik Janzén
  Carbon-vacancy related defects in 4H- and 6H-SiC
  Materials Science and Engineering B, Vol. 61-62, 1999.


Ph.D. Theses

Patrick Carlsson
  Electron paramagnetic resonance study of defects in SiC
  2010.


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