Publications for Ming Zhao
Co-author map based on ISI articles 2007-


virtual thz terahertz substrates strain sige si/sige relaxation quantum optical low-temperature lifetime intersubband hole heavy excited epitaxy energy cascade beam

Journal Articles

Bouchaib Adnane, Fredrik Karlsson, Ming Zhao, Göran Hansson, Per-Olof Holtz and Wei-Xin Ni
  Origin of photoresponse at 8-14 μm in stacks of self-assembled SiGe/Si quantum dots
  Physical Review B. Condensed Matter and Materials Physics, 2009, , .

Ming Zhao, Göran Hansson and Wei-Xin Ni
  Strain relaxation of thin Si0.6Ge0.4 grown with low-temperature buffers by molecular beam epitaxy
  JOURNAL OF APPLIED PHYSICS, 2009, 105(6), 063502.
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 Web of Science® Times Cited: 2

Ming Zhao, Amir Karim, Göran Hansson, Wei-Xin Ni, P Townsend, S A Lynch and D J Paul
  Molecular beam epitaxy growth of Si/SiGe bound-to-continuum quantum cascade structures for THz emission
  Thin Solid Films, 2008, 517(1), 34-37.
 Web of Science® Times Cited: 1

P. Rauter, T. Fromherz, N.Q. Vinh, B.N. Murdin, J.P. Phillips, C.R. Pidgeon, L. Diehl, G. Dehlinger, D. Gruetzmacher, Ming Zhao, Wei-Xin Ni and G. Bauer
  Direct determination of ultrafast intersubband hole relaxation times in voltage biased SiGe quantum wells by a density matrix interpretation of femtosecond resolved photocurrent experiments
  New Journal of Physics, 2007, 9, .
 Web of Science® Times Cited: 4

D.J. Paul, G. Matmon, P. Townsend, J. Zhang, Ming Zhao and Wei-Xin Ni
  A Review Of Progress Towards Terahertz Si/SiGe Quantum Cascade Lasers
  Journal of the Institution of Electronics and Telecommunication Engineers, 2007, 53(3), 285-292.
 Web of Science® Times Cited: 6

S.A. Lynch, D.J. Paul, P. Townsend, G. Matmon, Z. Suet, R.W. Kelsall, Z. Ikonic, P. Harrison, J. Zhang, D.J. Norris, A.G. Cullis, C.R. Pidgeon, P. Murzyn, B. Murdin, M. Bain, H.S. Gamble, Ming Zhao and Wei-Xin Ni
  Toward silicon-based lasers for terahertz sources
  IEEE Journal of Selected Topics in Quantum Electronics, 2006, 12(6), 1570-1577.
 Web of Science® Times Cited: 24

Anders Elfving, Ming Zhao, Göran V. Hansson and Wei-Xin Ni
  Asymmetric relaxation of SiGe/Si(110) investigated by high-resolution x-ray diffraction reciprocal space mapping
  Applied physics letters, 2006, 89, 181901-1--181901-3.
 Web of Science® Times Cited: 9

Ming Zhao, Amir Karim, Wei-Xin Ni, C. R. Pidgeon, P. J. Phillips, D. Carder, B. N. Murdin, T. Fromherz and D. J. Paul
  Strain-symmetrized Si/SiGe multi-quantum well structures grown by molecular beam epitaxy for intersubband engineering
  Journal of luminescence, 2006, 121(2), 403-408.
 Web of Science® Times Cited: 2

Ming Zhao, Wei- Xin Ni, P Townsend, S. A. Lynch, D. J. Paul, M. N. Chang and C. C. Hsu
  Low-temperature molecular beam epitaxy growth of Si/SiGe THz quantum cascade structures on virtual substrates
  Thin Solid Films, 2006, 508(1-2), 24-28.
 Web of Science® Times Cited: 4

CR Pidgeon, PJ Phillips, D Carder, BN Murdin, T Fromherz, DJ Paul, Wei-Xin Ni and Ming Zhao
  Pump-probe measurement of lifetime engineering in SiGe quantum wells below the optical phonon energy
  Semiconductor Science and Technology, 2005, 20(10), L50-L52.
 Web of Science® Times Cited: 8

Conference Articles

Bouchaib Adnane, Anders Elfving, Ming Zhao, Mats Larsson, Bengt Magnuson and Wei-Xin Ni
  Mid/far-infrared detection using a MESFET with B-modulation doped Ge-dot/SiGe-well multiple stacks in the channel region
  First IEEE International Conference on Group IV Photonics, 2004.

Ph.D. Theses

Ming Zhao
  Growth and Characterization of Strain-engineered Si/SiGe Heterostructures Prepared by Molecular Beam Epitaxy

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