Publications for Ming Zhao
Co-author map based on ISI articles 2007-


wells virtual transitions times thz substrates strain sisige sige sample relaxation quantum lifetime lh1 laser intersubband hole epitaxy cascade beam

Journal Articles

Bouchaib Adnane, Fredrik Karlsson, Ming Zhao, Göran Hansson, Per-Olof Holtz and Wei-Xin Ni
  Origin of photoresponse at 8-14 μm in stacks of self-assembled SiGe/Si quantum dots
  Physical Review B. Condensed Matter and Materials Physics, 2009, , .

Ming Zhao, Göran Hansson and Wei-Xin Ni
  Strain relaxation of thin Si0.6Ge0.4 grown with low-temperature buffers by molecular beam epitaxy
  JOURNAL OF APPLIED PHYSICS, 2009, 105(6), 063502.
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 Web of Science® Times Cited: 3

Ming Zhao, Amir Karim, Göran Hansson, Wei-Xin Ni, P Townsend, S A Lynch and D J Paul
  Molecular beam epitaxy growth of Si/SiGe bound-to-continuum quantum cascade structures for THz emission
  Thin Solid Films, 2008, 517(1), 34-37.
 Web of Science® Times Cited: 1

P. Rauter, T. Fromherz, N.Q. Vinh, B.N. Murdin, J.P. Phillips, C.R. Pidgeon, L. Diehl, G. Dehlinger, D. Gruetzmacher, Ming Zhao, Wei-Xin Ni and G. Bauer
  Direct determination of ultrafast intersubband hole relaxation times in voltage biased SiGe quantum wells by a density matrix interpretation of femtosecond resolved photocurrent experiments
  New Journal of Physics, 2007, 9, .
 Web of Science® Times Cited: 4

D.J. Paul, G. Matmon, P. Townsend, J. Zhang, Ming Zhao and Wei-Xin Ni
  A Review Of Progress Towards Terahertz Si/SiGe Quantum Cascade Lasers
  Journal of the Institution of Electronics and Telecommunication Engineers, 2007, 53(3), 285-292.
 Web of Science® Times Cited: 6

S.A. Lynch, D.J. Paul, P. Townsend, G. Matmon, Z. Suet, R.W. Kelsall, Z. Ikonic, P. Harrison, J. Zhang, D.J. Norris, A.G. Cullis, C.R. Pidgeon, P. Murzyn, B. Murdin, M. Bain, H.S. Gamble, Ming Zhao and Wei-Xin Ni
  Toward silicon-based lasers for terahertz sources
  IEEE Journal of Selected Topics in Quantum Electronics, 2006, 12(6), 1570-1577.
 Web of Science® Times Cited: 24

Anders Elfving, Ming Zhao, Göran V. Hansson and Wei-Xin Ni
  Asymmetric relaxation of SiGe/Si(110) investigated by high-resolution x-ray diffraction reciprocal space mapping
  Applied physics letters, 2006, 89, 181901-1--181901-3.
 Web of Science® Times Cited: 10

Ming Zhao, Amir Karim, Wei-Xin Ni, C. R. Pidgeon, P. J. Phillips, D. Carder, B. N. Murdin, T. Fromherz and D. J. Paul
  Strain-symmetrized Si/SiGe multi-quantum well structures grown by molecular beam epitaxy for intersubband engineering
  Journal of luminescence, 2006, 121(2), 403-408.
 Web of Science® Times Cited: 2

Ming Zhao, Wei- Xin Ni, P Townsend, S. A. Lynch, D. J. Paul, M. N. Chang and C. C. Hsu
  Low-temperature molecular beam epitaxy growth of Si/SiGe THz quantum cascade structures on virtual substrates
  Thin Solid Films, 2006, 508(1-2), 24-28.
 Web of Science® Times Cited: 4

CR Pidgeon, PJ Phillips, D Carder, BN Murdin, T Fromherz, DJ Paul, Wei-Xin Ni and Ming Zhao
  Pump-probe measurement of lifetime engineering in SiGe quantum wells below the optical phonon energy
  Semiconductor Science and Technology, 2005, 20(10), L50-L52.
 Web of Science® Times Cited: 9

Conference Articles

Bouchaib Adnane, Anders Elfving, Ming Zhao, Mats Larsson, Bengt Magnuson and Wei-Xin Ni
  Mid/far-infrared detection using a MESFET with B-modulation doped Ge-dot/SiGe-well multiple stacks in the channel region
  First IEEE International Conference on Group IV Photonics, 2004.

Ph.D. Theses

Ming Zhao
  Growth and Characterization of Strain-engineered Si/SiGe Heterostructures Prepared by Molecular Beam Epitaxy

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