Publications for Mikael Syväjärvi
Co-author map based on ISI articles 2007-

Publications mentioned in social media 1 times*

Keywords

white temperature substrates sublimation silicon sic quality photoluminescence off-axis luminescence lifetime graphene fluorescent epitaxy emission doping carrier carbide 6h-sic 3c-sic

Journal Articles

Pawel Kwasnicki, Valdas Jokubavicius, Jianwu Sun, H. Peyre, Rositsa Yakimova, Mikael Syväjärvi, J. Camasse and S. Juillaguet
  Optical investigation of 3C-SiC hetero-epitaxial layers grown by sublimation epitaxy under gas atmosphere
  Materials Science Forum, 2014, 778-780, 243-246.

V. Grivickas, K Gulbinas, Valdas Jokubavicius, Jianwu Sun, M. Karaliunas, Satoshi Kamiyama, Margareta Linnarsson, Michl Kaiser, Peter Wellmann and Mikael Syväjärvi
  Carrier Lifetimes and Influence of In-Grown Defects in N-B Co-Doped 6H-SiC
  IOP Conference Series: Materials Science and Engineering, 2014, 56(1), 012004.

Michl Kaiser, Saskia Schimmel, Valdas Jokubavicius, Margareta Linnarsson, Haiyan Ou, Mikael Syväjärvi and Peter Wellmann
  Nucleation and growth of polycrystalline SiC
  IOP Conference Series: Materials Science and Engineering, 2014, 56(1), 012001.

Saskia Schimmel, Michl Kaiser, Valdas Jokubavicius, Yiyu Ou, Philip Hens, Margareta K. Linnarsson, Jianwu Sun, Rickard Liljedahl, Haiyan Ou, Mikael Syväjärvi and Peter Wellmann
  The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy
  IOP Conference Series: Materials Science and Engineering, 2014, 56(1), 012002.

Haiyan Ou, Yiyu Ou, Aikaterini Argyraki, Saskia Schimmel, Michl Kaiser, Peter Wellmann, Margareta Linnarsson, Valdas Jokubavicius, Jianwu Sun, Rickard Liljedahl and Mikael Syväjärvi
  Advances in wide bandgap SiC for optoelectronics
  European Physical Journal B: Condensed Matter Physics, 2014, 87, 58.

Yiyu Ou, Xiaolong Zhu, Valdas Jokubavicius, Rositsa Yakimova, N. Asger Mortensen, Mikael Syväjärvi, Sanshui Xiao and Haiyan Ou
  Broadband Antireflection and Light Extraction Enhancement in Fluorescent SiC with Nanodome Structures
  Scientific Reports, 2014, 4, 4662.
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Remigijus Vasiliauskas, M. Marinova, Mikael Syväjärvi, E. K. Polychroniadis and Risitza Yakimova
  Polytype transformation and structural characteristics of 3C-SiC on 6H-SiC substrates
  Journal of Crystal Growth, 2014, 395, 109-115.

Karolis Gulbinas, P, Ščajev, V. Bikbajavas, V. Grivickas, O.V. Korolik, A.V Mazanik, A.K. Fedotov, Valdas Jokubavicius, Margareta Linnarsson, Mikael Syväjärvi and Satoshi Kamiyama
  Raman Scattering and Carrier Diffusion Study in Heavily Co-doped 6H-SiC Layers
  IOP Conference Series: Materials Science and Engineering, 2014, 56(1), 012005.

V. Gavryushin, K Gulbinas, V. Grivickas, M. Karaliunas, M. Stasiūpnas, Valdas Jokubavicius, Jianwu Sun and Mikael Syväjärvi
  Examination of Photoluminescence Temperature Dependencies in N-B Co-doped 6H-SiC
  IOP Conference Series: Materials Science and Engineering, 2014, 56(1), 012003.

G Manolis, K Gulbinas, V. Grivickas, Valdas Jokubavicius, Margareta Linnarsson and Mikael Syväjärvi
  Temperature Dependencies of Free-Carrier-Absorption Lifetime in Fluorescent 6H-SiC Layers
  IOP Conference Series: Materials Science and Engineering, 2014, 56(1), 012006.

Murali Murugesan, Carl Zanden, Xin Luo, Lilei Ye, Valdas Jokubavicius, Mikael Syväjärvi and Johan Liu
  A carbon fiber solder matrix composite for thermalmanagement of microelectronic devices
  Journal of Materials Chemistry C, 2014, , .

Gholamreza Yazdi, Remigijus Vasiliauskas, Tihomir Iakimov, Alexei Zakharov, Mikael Syväjärvi and Rositsa Yakimova
  Growth of large area monolayer graphene on 3C-SiC and a comparison with other SiC polytypes
  Carbon, 2013, 57, 477-484.
 Web of Science® Times Cited: 4

I Shtepliuk, Volodymyr Khranovskyy, G Lashkarev, V. Khomyak, V Lazorenko, A Ievtushenko, Mikael Syväjärvi, Valdas Jokubavicius and Rositsa Yakimova
  Electrical properties of n-Zn0.94Cd0.06O/p-SiC heterostructures
  Solid-State Electronics, 2013, 81, 72-77.
   Fulltext  PDF  
 Web of Science® Times Cited: 5

Valdas Jokubavicius, Michl Kaiser, Philip Hens, Peter Wellmann, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
  Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates
  Materials Science Forum, 2013, 740-742, 19-22.

Yiyu Ou, Imran Aijaz, Valdas Jokubavicius, Rositsa Yakimova, Mikael Syväjärvi and Haiyan Ou
  Broadband antireflection silicon carbide surface by self-assembled nanopatterned reactive-ion etching
  OPTICAL MATERIALS EXPRESS, 2013, 3(1), 86-94.
 Web of Science® Times Cited: 2

Xiaolong Zhu, Yiyu Ou, Valdas Jokubavicius, Mikael Syväjärvi, Ole Hansen, Haiyan Ou, N. Asger Mortensen and Sanshui Xiao
  Broadband light-extraction enhanced by arrays of whispering gallery resonators
  Applied Physics Letters, 2012, 101(24), .
 Web of Science® Times Cited: 5

Satoshi Kamiyama, Motoaki Iwaya, Tetsuya Takeuchi, Isamu Akasaki, Rositsa Yakimova and Mikael Syväjärvi
  White light-emitting diode based on fluorescent SiC
  Thin Solid Films, 2012, 522, 23-25.
 Web of Science® Times Cited: 1

Peter Wellmann, Mikael Syväjärvi, Michael Kneissel and Rongmin Wang
  Preface to selected papers from EMRS 2011 Symposium Q: Engineering of wide bandgap semiconductor materials for energy saving
  Thin Solid Films, 2012, 522, 1-1.

Mikael Syväjärvi
  Letter: Perspectives of fluorescent and cubic silicon carbide
  Advanced Materials Letters, 2012, 3(3), 175-176.

Yiyu Ou, Valdas Jokubavicius, Rositza Yakimova, Mikael Syväjärvi and Haiyan Ou
  Omnidirectional luminescence enhancement of fluorescent SiC via pseudoperiodic antireflective subwavelength structures
  Optics Letters, 2012, 37(18), 3816-3818.
 Web of Science® Times Cited: 7

Jianwu Sun, Ivan Gueorguiev Ivanov, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
  Considerably long carrier lifetimes in high-quality 3C-SiC(111)
  Applied Physics Letters, 2012, 100(25), 252101.
   Fulltext  PDF  
 Web of Science® Times Cited: 8

Milena Beshkova, Jens Birch, Mikael Syväjärvi and Rositsa Yakimova
  Sublimation epitaxy of 3C-SiC grown at Si- and C-rich conditions
  Vacuum, 2012, 86(10), 1595-1599.
 Web of Science® Times Cited: 1

Jens Eriksson, Ruth Pearce, Tihomir Iakimov, Chariya Virojanadara, Daniela Gogova, Mike Andersson, Mikael Syväjärvi, Anita Lloyd Spetz and Rositza Yakimova
  The influence of substrate morphology on thickness uniformity and unintentional doping of epitaxial graphene on SiC
 
Altmetric usage: 1

  Applied Physics Letters, 2012, 100(24), 241607.
   Fulltext  PDF  
 Web of Science® Times Cited: 10

Jianwu Sun, T. Robert, A. Andreadou, A. Mantzari, Valdas Jokubavicius, Rositsa Yakimova, J. Camassel, S. Juillaguet, E. K. Polychroniadis and Mikael Syväjärvi
  Shockley-Frank stacking faults in 6H-SiC
  Journal of Applied Physics, 2012, 111, 113527.
   Fulltext  PDF  
 Web of Science® Times Cited: 2

Jianwu Sun, Satoshi Kamiyama, Valdas Jokubavicius, H. Peyre, Rositsa Yakimova, S. Juillaguet and Mikael Syväjärvi
  Fluorescent silicon carbide as an ultraviolet-to-visible light converter by control of donor to acceptor recombinations
  Journal of Physics D: Applied Physics, 2012, 45(23), 235107.
   Fulltext  PDF  
 Web of Science® Times Cited: 3

Yiyu Ou, Valdas Jokubavicius, Philip Hens, Michl Kaiser, Peter Wellmann, Rositsa Yakimova, Mikael Syväjärvi and Haiyan Ou
  Broadband and omnidirectional light harvesting enhancement of fluorescent SiC
  Optics Express, 2012, 20(7), 7575-7579.
 Web of Science® Times Cited: 8

Remigijus Vasiliauskas, A. Mekys, P. Malinovskis, Mikael Syväjärvi, J. Storasta and Rositza Yakimova
  Influence of twin boundary orientation on magnetoresistivity effect in free standing 3C–SiC
  Materials letters (General ed.), 2012, 74, 203-205.
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 Web of Science® Times Cited: 3

Remigijus Vasiliauskas, A. Mekys, P. Malinovskis, Sandrine Juillaguer, Mikael Syväjärvi, J. Storasta and Risitza Yakimova
  Impact of extended defects on Hall and magnetoresistivity effects in cubic silicon carbide
  Journal of Physics D: Applied Physics, 2012, 45(22), 225102.
 Web of Science® Times Cited: 2

Remigijus Vasiliauskas, Sandrine Juillaguer, Mikael Syväjärvi and Risitza Yakimova
  Cubic SiC formation on the C-face of 6H-SiC (0001) substrates
  Journal of Crystal Growth, 2012, 348(1), 91-96.
   Fulltext  PDF  
 Web of Science® Times Cited: 9

Yiyu Ou, Valdas Jokubavicius, Margareta Linnarsson, Rositza Yakimova, Mikael Syväjärvi and Haiyan Ou
  Characterization of donor–acceptor-pair emission in fluorescent 6H-SiC
  Physica Scripta, 2012, T148, 014003.

Mikael Syväjärvi, J. Müller, Jianwu Sun, Vytautas Grivickas, Yiyu Ou, Valdas Jokubavicius, Philip Hens, M. Kaisr, Kanaparin Ariyawong, K. Gulbinas, Rickard Liljedahl, M. K. Linnarsson, S. Kamiyama, P. Wellmann, E. Spiecker and H. Ou
  Fluorescent SiC as a new material for white LEDs
  Physica scripta. T, 2012, T148, 014002.
 Web of Science® Times Cited: 13

Jianwu Sun, Valdas Jokubavicius, Rickard Liljedahl, Rositsa Yakimova, S. Juillaguet, J. Camassel, S. Kamiyama and Mikael Syväjärvi
  Room temperature luminescence properties of fluorescent SiC as white light emitting diode medium
  Thin Solid Films, 2012, 522, 33-35.
 Web of Science® Times Cited: 2

Valdas Jokubavicius, P. Hens, Richard Liljedahl, Jianwu Sun, M. Kaiser, P. Wellmann, S. Sano, Rositza Yakimova, S. Kamiyama and Mikael Syväjärvi
  Effects of source material on epitaxial growth of fluorescent SiC
  Thin Solid Films, 2012, 522, 7-10.
 Web of Science® Times Cited: 2

Philip Hens, Valdas Jokubavicius, Rickard Liljedahl, G Wagner, Rositsa Yakimova, P Wellmann and Mikael Syväjärvi
  Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds
  Materials letters (General ed.), 2012, 67(1), 300-302.
   Fulltext  PDF  
 Web of Science® Times Cited: 4

Remigijus Vasiliauskas, Maya Marinova, Philip Hens, Peter Wellmann, Mikael Syväjärvi and Rositsa Yakimova
  Nucleation Control of Cubic Silicon Carbide on 6H- Substrates
  Crystal Growth & Design, 2012, 12(1), 197-204.
 Web of Science® Times Cited: 9

J. W. Sun, Volodymyr Khranovskyy, M. Mexis, Martin Eriksson, Mikael Syväjärvi, I. Tsiaoussis, Gholamreza Yazdi, H. Peyre, S. Juillaguet, J. Camassel, Per-Olof Holtz, Peder Bergman, Lars Hultman and Rositsa Yakimova
  Comparative micro-photoluminescence investigation of ZnO hexagonal nanopillars and the seeding layer grown on 4H-SiC
  Journal of Luminescence, 2012, 132(1), 122-127.

Valdas Jokubavicius, Richard Liljedahl, Yiyu Ou, Haiyan Ou, Satoshi Kamiyama, Rositza Yakimova and Mikael Syväjärvi
  Geometrical Control of 3C and 6H-SiC Nucleation on Low Off-Axis Substrates
  Materials Science Forum, 2011, 679-680, 103-106.
   Fulltext  PDF  
 Web of Science® Times Cited: 4

Yiyu Ou, Valdas Jokubavicius, Satoshi Kamiyama, Chuan Liu, Rolf W. Berg, Margareta Linnarsson, Rositsa Yakimova, Mikael Syväjärvi and Haiyan Ou
  Donor-acceptor-pair emission characterization in N-B dopedf luorescent in SiC
  Optical Materials Express, 2011, 1(8), 1439-1446.
 Web of Science® Times Cited: 21

Satoshi Kamiyama, Motoaki Iwaya, Tetsuya Takeuchi, Isamu Akasaki, Mikael Syväjärvi and Rositsa Yakimova
  Fluorescent SiC and its application to white light-emitting diodes
  Journal of semiconductors, 2011, 32(1), 013004-1-013004-3.

Alexander Tzalenchuk, Samuel Lara-Avila, Karin Cedergren, Mikael Syväjärvi, Rositsa Yakimova, Olga Kazakova, T J B M Janssen, Kasper Moth-Poulsen, Thomas Bjornholm, Sergey Kopylov, Vladimir Falko and Sergey Kubatkin
  Engineering and metrology of epitaxial graphene
  Solid State Communications, 2011, 151(16), 1094-1099.
 Web of Science® Times Cited: 10

Remigijus Vasiliauskas, M. Marinova, Mikael Syväjärvi, Rickard Liljedahl, G. Zoulis, J. Lorenzzi, G. Ferro, S. Juillaguet, J. Camassel, E. K. Polychroniadis and Rositsa Yakimova
  Effect of initial substrate conditions on growth of cubic silicon carbide
  Journal of Crystal Growth, 2011, 324(1), 7-14.
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 Web of Science® Times Cited: 19

Alexander Tzalenchuk, Samuel Lara-Avila, Alexei Kalaboukhov, Sara Paolillo, Mikael Syväjärvi, Rositsa Yakimova, Olga Kazakova, T J B M Janssen, Vladimir Falko and Sergey Kubatkin
  Towards a quantum resistance standard based on epitaxial graphene
  NATURE NANOTECHNOLOGY, 2010, 5(3), 186-189.
 Web of Science® Times Cited: 138

Gholamreza Yazdi, Per Persson, D Gogova, Lars Hultman, Mikael Syväjärvi and Rositsa Yakimova
  Aligned AlN nanowires by self-organized vapor-solid growth
  NANOTECHNOLOGY, 2009, 20(49), 495304.
 Web of Science® Times Cited: 12

Chariya Virojanadara, Rositsa Yakimova, Jacek Osiecki, Mikael Syväjärvi, Roger Uhrberg, Leif Johansson and A A Zakharov
  Substrate orientation: A way towards higher quality monolayer graphene growth on 6H-SiC(0001)
  Surface Science, 2009, 603(15), L87-L90.
 Web of Science® Times Cited: 33

Gholamreza Yazdi, Manfred Beckers, Finn Giuliani, Mikael Syväjärvi, Lars Hultman and Rositsa Yakimova
  Freestanding AlN single crystals enabled by self-organization of 2H-SiC pyramids on 4H-SiC substrates
  APPLIED PHYSICS LETTERS, 2009, 94(8), 082109.
 Web of Science® Times Cited: 9

Gholamreza Yazdi, Remigijus Vasiliauskas, Mikael Syväjärvi and Rositsa Yakimova
  Fabrication of free-standing AlN crystals by controlled microrod growth
  Journal of Crystal Growth, 2008, 300(5), 935-939 .
 Web of Science® Times Cited: 3

Chariya Virojanadara, Mikael Syväjärvi, Rositsa Yakimova, Leif Johansson, A A Zakharov and T Balasubramanian
  Homogeneous large-area graphene layer growth on 6H-SiC(0001)
  Physical Review B. Condensed Matter and Materials Physics, 2008, 78(24), 245403.
 Web of Science® Times Cited: 200

D.J. Ewing, L.M. Porter, Qamar Ul Wahab, Rafal Ciechonski, Mikael Syväjärvi and Rositsa Yakimova
  Inhomogeneous electrical characteristics in 4H-SiC Schottky diodes
  Semiconductor Science and Technology, 2007, 22(12), 1287-1291.
 Web of Science® Times Cited: 9

Alexander Lebedev, V.V. Zelenin, P.L. Abramov, E.V. Bogdanova, S.P. Lebedev, D.K. Nel¿son, B.S. Razbirin, M.P. Shcheglov, A.S. Tregubova, Mikael Syväjärvi and Rositsa Yakimova
  A study of thick 3C-SiC epitaxial layers grown on 6H-SiC substrates by sublimation epitaxy in vacuum
  Semiconductors (Woodbury, N.Y.), 2007, 41(3), 263-265.
 Web of Science® Times Cited: 16

Gholamreza Yazdi, Mikael Syväjärvi and Rositsa Yakimova
  Formation of needle-like and columnar structures of AlN
  Journal of Crystal Growth, 2007, 300(1), 130-135 .
 Web of Science® Times Cited: 8

Gholamreza Yazdi, Mikael Syväjärvi and Rositsa Yakimova
  Aligned AlN nanowires and microrods by self-patterning
  Applied Physics Letters, 2007, 90(12), 123103.
 Web of Science® Times Cited: 10

Rositsa Yakimova, Gholam Reza Yazdi, Son Tien Nguyen, Ivan Gueorguiev Ivanov, Mikael Syväjärvi, S. Sun, G. Tompa, A. Kuznetsov and B. Svensson
  Optical and Morphological Features of Bulk and Homoepitaxial ZnO
  Superlattices and Microstructures, 2006, 39, 247-256.
 Web of Science® Times Cited: 10

Gholamreza Yazdi, Mikael Syväjärvi and Rositsa Yakimova
  Growth and morphology of AlN crystals
  Physica Scripta, 2006, T126, 127-130.
 Web of Science® Times Cited: 5

N.B. Strokan, A.M. Ivanov, A.A. Lebedev, Mikael Syväjärvi and Rositsa Yakimova
  Measurement of micrometer diffusion lengths by nuclear spectrometry
  Semiconductors (Woodbury, N.Y.), 2005, 39(12), 1394-1398.
 Web of Science® Times Cited: 6

N.B. Strokan, A.M. Ivanov, A.A. Lebedev, Mikael Syväjärvi and Rositsa Yakimova
  The limiting energy resolution of SiC detectors in ion spectrometry
  Semiconductors (Woodbury, N.Y.), 2005, 39(12), 1420-1425.
 Web of Science® Times Cited: 2

CF Pirri, S Porro, S Ferrero, E Celasco, S Guastella, L Scaltrito, Rositsa Yakimova, Mikael Syväjärvi, Rafal Ciechonski, S De Angelis and D Crippa
  Growth, morphological and structural characterization of silicon carbide epilayers for power electronic devices applications
  Crystal research and technology (1981), 2005, 40(10-Nov), 964-966.

Mikael Syväjärvi, Rafal R. Ciechonski, Gholamreza R. Yazdi and Rositsa Yakimova
  Fast epitaxy by PVT of SiC in hydrogen atmosphere
  Journal of Crystal Growth, 2005, 275(1-2), e1103-e1107 .
 Web of Science® Times Cited: 3

Rositsa Yakimova, Anelia Kakanakova-Georgieva, Gholamreza R. Yazdi, Gueorgui K. Gueorguiev and Mikael Syväjärvi
  Sublimation growth of AlN crystals: Growth mode and structure evolution
  Journal of Crystal Growth, 2005, 281(1), 81-86.
 Web of Science® Times Cited: 16

Rafal Ciechonski, Mikael Syväjärvi, Qamar Ul Wahab and Rositsa Yakimova
  Evaluation of MOS structures processed on 4H–SiC layers grown by PVT epitaxy
  Solid-State Electronics, 2005, 49(12), 1917-1920.

Rositsa Yakimova, N Vouroutzis, Mikael Syväjärvi and J Stoemenos
  Morphological features related to micropipe closing in 4H-SiC
  Journal of Applied Physics, 2005, 98(3), 34905.
 Web of Science® Times Cited: 7

A Paskaleva, Rafal Ciechonski, Mikael Syväjärvi, E Atanassova and Rositsa Yakimova
  Electrical behavior of 4H-SiC metal-oxide-semiconductor structures with Al2O3 as gate dielectric
  Journal of Applied Physics, 2005, 97(12), 124507.
 Web of Science® Times Cited: 16

Rafal Ciechonski, Mikael Syväjärvi, Jawad ul-Hassan and Rositsa Yakimova
  Structural instabilities in growth of SiC crystals
  Journal of Crystal Growth, 2005, 275(1-2), e461-e466.
 Web of Science® Times Cited: 4

Samuele Porro, Rafal Ciechonski, Mikael Syväjärvi and Rositsa Yakimova
  Electrical Analysis and Interface States Evaluation of of Ni Schottky diodes on 4H-SiC thick epilayers
  physica status solidi (a), 2005, 202(13), 2508-2514.
 Web of Science® Times Cited: 4

SY Davydov, Alexander Lebedev, NS Savkina, Mikael Syväjärvi and Rositsa Yakimova
  A simple model for calculating the growth rate of epitaxial layers of silicon carbide in vacuum
  Semiconductors (Woodbury, N.Y.), 2004, 38(2), 150-152.
 Web of Science® Times Cited: 1

N.B. Strokan, A.M. Ivanov, N.S. Savkina, A.A. Lebedev, V.V. Kozlovskii, Mikael Syväjärvi and Rositsa Yakimova
  Radiation resistance of transistor- and diode-type SiC detectors irradiated with 8-MeV protons
  Semiconductors (Woodbury, N.Y.), 2004, 38(7), 807-811.
 Web of Science® Times Cited: 12

H. Jacobson, Rositsa Yakimova, P. Raback, Mikael Syväjärvi, Anne Henry, T. Tuomi and Erik Janzén
  Lateral enlargement of silicon carbide crystals
  Journal of Crystal Growth, 2004, 270(1-2), .
 Web of Science® Times Cited: 1

E Polychroniadis, Mikael Syväjärvi, Rositsa Yakimova and J Stoemenos
  Microstructural characterization of very thick freestanding 3C-SiC wafers
  Journal of Crystal Growth, 2004, 263( 1-4), 68-75.
 Web of Science® Times Cited: 52

N.B. Strokan, A.M. Ivanov, N.S. Savkina, A.M. Strelchuk, A.A. Lebedev, Mikael Syväjärvi and Rositsa Yakimova
  Detection of strongly and weakly ionizing radiation by triode structure based on SIC films
  Journal of Applied Physics, 2003, 93(9), 5714-5719.
 Web of Science® Times Cited: 8

H. Jacobson, Rositsa Yakimova, Mikael Syväjärvi, Anelia Kakanakova-Georgieva, T. Tuomi and Erik Janzén
  Structural impact of LPE buffer layer on sublimation grown 4H-SiC epilayers
  Journal of Crystal Growth, 2003, 256(3-4), 276-282.
 Web of Science® Times Cited: 4

Rafal Ciechonski, Mikael Syväjärvi, Anelia Kakanakova-Georgieva and Rositsa Yakimova
  Effect of boron on the resistivity of compensated 4H-SiC
  Journal of electronic materials, 2003, 32(5), 452-457.
 Web of Science® Times Cited: 2

Anelia Kakanakova-Georgieva, Rositsa Yakimova, Anne Henry, M.K. Linnarsson, Mikael Syväjärvi and Erik Janzén
  Cathodoluminescence identification of donor-acceptor related emissions in as-grown 4H-SiC layers
  Journal of Applied Physics, 2002, 91(5), 2890-2895.
 Web of Science® Times Cited: 18

Mikael Syväjärvi, Rositsa Yakimova and Erik Janzén
  Step-bunching in SiC epitaxy: Anisotropy and influence of growth temperature
  Journal of Crystal Growth, 2002, 236(1-3), 297-304.
 Web of Science® Times Cited: 23

Anelia Kakanakova-Georgieva, Rositsa Yakimova, G.K. Gueorguiev, M.K. Linnarsson, Mikael Syväjärvi and Erik Janzén
  Kinetics of residual doping in 4H-SiC epitaxial layers grown in vacuum
  Journal of Crystal Growth, 2002, 240(3-4), 501-507.
 Web of Science® Times Cited: 1

H. Jacobson, Jens Birch, Rositsa Yakimova, Mikael Syväjärvi, Peder Bergman, A. Ellison, T. Tuomi and Erik Janzén
  Dislocation-evolution in 4H-SiC epitaxial layers
  Journal of Applied Physics, 2002, 91(10 I), 6354.
 Web of Science® Times Cited: 55

P.-A. Glans, T. Balasubramanian, Mikael Syväjärvi, Rositsa Yakimova and Leif Johansson
  Core level and valence band photoemission study of the (1 1 1) and (1¯ 1¯ 1¯) surfaces of 3C-SiC
  Surface Science, 2001, 470(3), 284-292.
 Web of Science® Times Cited: 12

Rositsa Yakimova, Mikael Syväjärvi, Tihomir Iakimov, Henrik Jacobsson, R Raback, A Vehanen and Erik Janzén
  Polytype stability in seeded sublimation growth of 4H-SiC boules
  Journal of Crystal Growth, 2000, 217(3), 255-262.
 Web of Science® Times Cited: 39

Alexander Lebedev, DV Davydov, NS Savkina, AS Tregubova, MP Shcheglov, Rositsa Yakimova, Mikael Syväjärvi and Erik Janzén
  Structural defects and deep-level centers in 4H-SiC epilayers grown by sublimational epitaxy in vacuum
  Semiconductors (Woodbury, N.Y.), 2000, 34(10), 1133-1136.
 Web of Science® Times Cited: 4

Mikael Syväjärvi, Rositsa Yakimova, Henrik Jacobsson and Erik Janzén
  Structural improvement in sublimation epitaxy of 4H-SiC
  Journal of Applied Physics, 2000, 88(3), 1407-1411.
 Web of Science® Times Cited: 36

Mikael Syväjärvi, Rositsa Yakimova and Erik Janzén
  Cross-sectional cleavages of SiC for evaluation of epitaxial layers
  Journal of Crystal Growth, 2000, 208(1), 409-415.
 Web of Science® Times Cited: 6

Mikael Syväjärvi, Rositsa Yakimova and Erik Janzén
  Anisotropic etching of SiC
  Journal of the Electrochemical Society, 2000, 147(9), 3519-3522.
 Web of Science® Times Cited: 26

Mikael Syväjärvi, Rositsa Yakimova, M Tuominen, Anelia Kakanakova-Georgieva, M F Macmillan, Anne Henry, Qamar Ul Wahab and Erik Janzén
  Growth of 6H and 4H-SiC by sublimation epitaxy
  Journal of Crystal Growth, 1999, 197(1-2), 155-162.

Mikael Syväjärvi, Rositsa Yakimova, Anelia Kakanakova-Georgieva, M.F MacMillan and Erik Janzén
  Kinetics and morphological stability in sublimation growth of 6H and 4H-SiC epitaxial layers
  Materials Science and Engineering: B, 1999, 61-62, 161-164.

B Pecz, Rositsa Yakimova, Mikael Syväjärvi, C Lockowandt, H Radamson, G Radnoczi and Erik Janzén
  Structural investigation of SiC epitaxial layers grown under microgravity and on-ground conditions
  Thin Solid Films, 1999, 357(2), 137-143.

Mikael Syväjärvi, Rositsa Yakimova, AL Hylen and Erik Janzén
  Anisotropy of dissolution and defect revealing on SiC surfaces
  Journal of Physics: Condensed Matter, 1999, 11(49), 10041-10046.

Mikael Syväjärvi, Rositsa Yakimova and Erik Janzén
  Step-bunching in 6H-SiC growth by sublimation epitaxy
  Journal of Physics: Condensed Matter, 1999, 11(49), 10019-10024.

B Pecz, Rositsa Yakimova, Mikael Syväjärvi, C Lockowandt, G Radnoczi and Erik Janzén
  Structure of SiC layers grown by LPE in microgravity and on-ground conditions
  Institute of Physics Conference Series, 1999, (164), 243-246.

M. Tuominen, Rositsa Yakimova, Anelia Kakanakova-Georgieva, M.F. MacMillan, Mikael Syväjärvi and Erik Janzén
  Investigation of domain evolution in sublimation epitaxy of SiC
  Journal of Crystal Growth, 1998, 193(1-2), 101-108.

Anelia Kakanakova-Georgieva, T. Paskova, Rositsa Yakimova, Christer Hallin, Mikael Syväjärvi, E.P. Trifonova, M. Surtchev and Erik Janzén
  Structural properties of 6H-SiC epilayers grown by two different techniques
  Materials Science and Engineering B, 1997, 46(1-3), 345-348.

Books

Ashutosh Tiwari and Mikael Syväjärvi
  Advanced Materials for Agriculture, Food and Environmental Safety
  John Wiley & Sons, 2014.


Anthologies

Mats Bladh and Mikael Syväjärvi
  New Lighting—New LEDs: Aspects on light-emitting diodes from social and material science perspectives
  Linköping University Electronic Press, 2010.


  Fulltext PDF

Mikael Syväjärvi and Rositsa Yakimova
  Wide band gap materials and new developments
  Research Signpost, 2006.


Chapters in Books

Rositsa Yakimova and Mikael Syväjärvi
  Liquid Phase Epitaxy of SiC
  Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials, Wiley, 2007, 179-202.


Rositsa Yakimova, Mikael Syväjärvi, Henrik Jacobson and Erik Janzén
  Some aspects of extended defects formation and their reduction in silicon carbide crystals
  Recent research developments in materials science & engineering. Vol. 1, pt. 1, Trans Research Network, 2003, 619-646.


Conference Articles

Martin Wilhelm, Michl Kaiser, Valdas Jakubavicius, Mikael Syväjärvi, Y. Ou, H. Ou and P. Wellmann
  Photoluminescence topography of fluorescent SiC and its corresponding source crystals
  Silicon Carbide and Related Materials 2012, 2013.


Saskia Schimmel, Michl Kaiser, Philip Hens, Valdas Jokubavicius, Rickard Liljedahl, Jianwu Sun, Rositsa Yakimova, Yi Yu Ou, Hai Yan Ou, Margareta K. Linnarsson, Peter Wellmann and Mikael Syväjärvi
  Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates
  Silicon Carbide and Related Materials 2012, 2013.


 Web of Science® Times Cited: 1

Valdas Jokubavicius, Ho-Hsuan Huang, Saskia Schimmel, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
  Towards bulk-like 3C-SiC growth using low off-axis substrates
  SILICON CARBIDE AND RELATED MATERIALS 2012, 2013.


Philip Hens, Julian Müller, Günter Wagner, Rickard Liljedahl, Erdman Spiecker and Mikael Syväjärvi
  Defect generation and annihilation in 3C-SiC-(001) homoepitaxial growth by sublimation
  Silicon Carbide and Related Materials 2012, 2013.


Jianwu Sun, Satoshi Kamiyama, Peter Wellmann, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
  Microsecond carrier lifetimes in bulk-like 3C-SiC grown by sublimation epitaxy
  Silicon Carbide and Related Materials 2012, 2013.


Remigijus Vasiliauskas, Paulius Malinovskis, Algirdas Mekys, Mikael Syväjärvi, Jurgis Storasta and Rositsa Yakimova
  Polytype Inclusions in Cubic Silicon Carbide
  Silicon Carbide and Related Materials 2012, 2013.


Jianwu Sun, Satoshi Kamiyama, Rositsa Yakimova and Mikael Syväjärvi
  Effect of surface and interface recombination on carrier lifetime in 6H-SiC layers
  SILICON CARBIDE AND RELATED MATERIALS 2012, 2013.


Valdas Jokubavicius, Ho Hsuan Huang, Saskia Schimmel, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
  Towards Bulk-Like 3C-SiC Growth Using Low Off-Axis Substrates
  9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia, 2013.


Kanaparin Ariyawong, Valdas Jokubavicius, Rickard Liljedahl and Mikael Syväjärvi
  Step Instability in Sublimation Epitaxy on Low Off-Axis 6H-SiC
  9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia, 2013.


Michl Kaiser, Thomas Hupfer, Valdas Jokubavicius, Saskia Schimmel, Mikael Syväjärvi, Yiyu Ou, Haiyan Ou, Margareta Linnarsson and Peter Wellmann
  Polycrystalline SiC as Source Material for the Growth of Fluorescent SiC Layers
  9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia, 2013.


Thomas Hupfer, Philip Hens, Michl Kaiser, Valdas Jokubavicius, Mikael Syväjärvi and Peter Wellmann
  Modeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation Epitaxy
  9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia, 2013.


Margareta Linnarsson, Michl Kaiser, Rickard Liljedahl, Valdas Jokubavicius, Yiyu Ou, Peter Wellmann, Haiyan Ou and Mikael Syväjärvi
  Lateral Boron Distribution in Polycrystalline SiC Source Materials
  9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia, 2013.


Yiyu Ou, Valdas Jokubavicius, Michl Kaiser, Peter Wellmann, Margareta Linnarsson, Rositsa Yakimova, Mikael Syväjärvi and Haiyan Ou
  Fabrication of Broadband Antireflective Sub-Wavelength Structures on Fluorescent SiC
  9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia, 2013.


Valdas Jokubavicius, Michl Kaiser, Philip Hens, Peter Wellmann, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
  Morphological and optical stability in growth of fluorescent SiCon low off-axis substrates
  9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia, 2013.


Valdas Jokubavicius, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
  Stability in growth of 6H-SiC and 3C-SiC for LEDs and solar cells
  2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2012.


G. Zoulis, Jianwu Sun, Remigijus Vasiliauskas, J. Lorenzzi, H. Peyre, Mikael Syväjärvi, G. Ferro, S. Juillaguet, Rositza Yakimova and J. Camassel
  Seeding layer influence on the low temperature photoluminescence intensity of 3C-SiC grown on 6H-SiC by sublimation epitaxy
  HETEROSIC and WASMPE 2011, 2012.


 Web of Science® Times Cited: 1

P. Scajev, P. Onufnjevs, G. Manolis, M. Karaliunas, S. Nargelas, N. Jegenyes, J. Lorenzzi, G. Ferro, Milena Beshkova, Remigijus Vasiliauskas, Mikael Syvajärvi, Rositsa Yakimova, M. Kato and K. Jarasionas
  On applicability of time-resolved optical techniques for characterization of differently grown 3C-SiC crystals and heterostructures
  HETEROSIC and WASMPE 2011, 2012.


Rositsa Yakimova, Remigijus Vasiliauskas, Jens Eriksson and Mikael Syväjärvi
  Progress in 3C-SiC growth and novel applications
  Materials Science Forum Vol 711, 2012.


 Web of Science® Times Cited: 2  Fulltext PDF

Mikael Syväjärvi, Rositsa Yakimova, M. Iwaya, T. Takeuchi, I. Akasaki and Satoshi Kamiyama
  Growth and light properties of fluorescent SiC for white LEDs
  Materials Science Forum Vols 717 - 720, 2012.


Philip Hens, J. Müller, G. Wagner, Rickard Liljedahl, Rositsa Yakimova, E. Spiecker, P. Wellmann and Mikael Syväjärvi
  Freestanding 3C-SiC grown by sublimation epitaxy using 3C-SiC templates on silicon
  Materials Science Forum Vols 717 - 720, 2012.


M. Asghar, F. Iqbal, Sadia Municha Faraz, Valdas Jokubavicius, Qamar Wahab and Mikael Syväjärvi
  Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation method
  -, 2012.


 Web of Science® Times Cited: 1

M. Asghar, F. Iqbal, Sadia Faraz, Valdas Jokubavicius, Qamar Wahab and Mikael Syväjärvi
  Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopy
  26th International Conference on Defects in Semiconductors, 2012.


 Web of Science® Times Cited: 1

Valdas Jokubavicius, Björn Lundqvist, Philip Hens, Rickard Liljedahl, Rositza Yakimova, Satoshi Kamiyama and Mikael Syväjärvi
  On stabilization of 3C-SiC using low off-axis 6H-SiC substrates
  ICSCRM2011, 2012.


 Web of Science® Times Cited: 2

Yiyu Ou, Valdas Jokubavicius, Chuan Liu, Rolf W. Berg, Margareta Linnarsson, Satoshi Kamiyama, Zhaoyue Lu, Rositza Yakimova, Mikael Syväjärvi and Haiyan Ou
  Photoluminescence and Raman spectroscopy characterization of boron and nitrogen-doped 6H silicon carbide
  ICSCRM2011, 2012.


Jianwu Sun, T. Robert, Valdas Jokubavicius, S. Juillaguet, Rositza Yakimova, Mikael Syväjärvi and J. Camassel
  Low Temperature Photoluminescence Signature of Stacking Faults in 6H-SiC Epilayers Grown on Low Angle Off-axis Substrates
  ICSCRM2011, 2012.


Remigijus Vasiliauskas, M. Marinova, Mikael Syväjärvi, A. Mantzari, A. Andreadou, J. Lorenzzi, G. Ferro, E.K. Polychroniadis and Rositsa Yakimova
  Sublimation Growth and Structural Characterization of 3C-SiC on Hexagonal and Cubic SiC Seeds
  Materials Science Forum, Vols. 645-648, 2010.


 Web of Science® Times Cited: 13

Milena Beshkova, J. Lorenzzi, N. Jegenyes, Jens Birch, Mikael Syväjärvi, G. Ferro and Rositsa Yakimova
  Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates
  Materials Science Forum, Vols. 645-648, 2010.


 Web of Science® Times Cited: 2

Valdas Jokubavicius, Justinas Palisaitis, Remigijus Vasiliauskas, Rositsa Yakimova and Mikael Syväjärvi
  Macrodefects in cubic silicon carbide crystals
  Materials Science Forum, Vols. 645-648, 2010.


 Web of Science® Times Cited: 2  Fulltext PDF

Rositsa Yakimova, Chariya Virojanadara, Daniela Gogova, Mikael Syväjärvi, D. Siche, Krister Larsson and Leif Johansson
  Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates
  SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010.


 Web of Science® Times Cited: 24  Fulltext PDF

Gholamreza Yazdi, K. Vassilevski, Jose Manuel Cordoba Gallego, Daniela Gogova, I. P. Nikitina, Mikael Syväjärvi, Magnus Odén, N.G. Wright and Rositsa Yakimova
  Free standing AIN single crystal grown on pre-patterned and in situ patterned 4H-SiC substrates
  Materials Science Forum, Vols. 645-648, 2010.


Chariya Virojanadara, Mikael Syväjärvi, Rositsa Yakimova, Leif Johansson, A.A. Zakharov and T. Balasubramanian
  Single Layer Graphene Growth on 6H-SiC(0001)
  , 2009.


Philip Hens, Mikael Syväjärvi, F. Oehlschläger, P. Wellman and Rositsa Yakimova
  P- and n-type doping in SiC sublimation epitaxy using highly doped substrates
  ECSCRM2008,2008, 2009.


 Web of Science® Times Cited: 1

Milena Beshkova, Mikael Syväjärvi, Remigijus Vasiliauskas, Jens Birch and Rositsa Yakimova
  Properties of 3C-SiC Grown by Sublimation Epitaxy
  ECSCRM2008,2008, 2009.


Remigijus Vasiliauskas, Mikael Syväjärvi, Milena Beshkova and Rositsa Yakimova
  Two-dimensional nucleation of cubic and 6H silicon carbide
  ECSCRM2008,2008, 2009.


 Web of Science® Times Cited: 9

K. Neimontas, K. Jarasiunas, Rositsa Yakimova, Mikael Syväjärvi and G. Ferro
  Characterization of electronic properties of different SiC polytypes by all-optical means
  Materials Science Forum, Vols. 600-603, 2009.


 Web of Science® Times Cited: 2

Milena Beshkova, Mikael Syväjärvi, Remigijus Vasiliauskas, Jens Birch and Rositsa Yakimova
  Structural Properties of 3C-SiC Grown by Sublimation Epitaxy
  ECSCRM2009,2009, 2009.


 Web of Science® Times Cited: 6

V Khranovskyy, I Tsiaoussis, Mikael Syväjärvi, Arvid Larsson, Per-Olof Holtz and Rositsa Yakimova
  Size tuning of uniformly oriented ZnO nanostructures
  Nanotech 2008,2008, 2008.


E.N. Kalabukhova, S.N. Lukin, D.V. Savchenko, W.C. Mitchel, S. Greulich-Weber, U. Gerstmann, A. Pöppl, J. Hoentsch, E. Rauls, Y. Rozentzveig, E.N. Mokhov, Mikael Syväjärvi and Rositsa Yakimova
  EPR, ESE and Pulsed ENDOR Study of Nitrogen Related Centers in 4H-SiC Wafers Grown by Different Technologies
  ECSCRM 2006,2006, 2007.


 Web of Science® Times Cited: 6

M. Wagner, E. Mustafa, S. Hahn, Mikael Syväjärvi, Rositsa Yakimova, S. Jang, S.A. Sakwe and P.J. Wellmann
  Contactless Electrical Defect Characterization and Topography of a-Plane Grown Epitaxial Layers
  ECSCRM 2006,2006, 2007.


 Web of Science® Times Cited: 2

Mikael Syväjärvi, N. Sritirawisarn and Rositsa Yakimova
  Initial Growth in 3C-SiC Sublimation Epitaxy on 6H-SiC
  ECSCRM 2006,2006, 2007.


 Web of Science® Times Cited: 4

Rodrigo Jr Petoral, Gholamreza Yazdi, Cecilia Vahlberg, Mikael Syväjärvi, Anita Lloyd Spetz, Kajsa Uvdal and Rositsa Yakimova
  Surface Functionalization of SiC for Biosensor Applications
  ECSCRM 2006,2006, 2007.


 Web of Science® Times Cited: 2

Gholamreza Yazdi, Mikael Syväjärvi and Rositsa Yakimova
  Novel approach to AlN growth for power device applications
  WASMPE 2007,2007, 2007.


Alexander Lebedev, V.V. Zelenin, P.L. Abramov, E.V. Bogdanova, S.P. Lebedev, D.K. Nelson, B.S. Razbirin, M.P. Scheglov, A.S. Tregubova, Mikael Syväjärvi and Rositsa Yakimova
  Growth and Study of Thick 3C-SiC Epitaxial Layers Produced by Epitaxy on 6H-SiC Substrates
  ECSCRM 2006,2006, 2007.


 Web of Science® Times Cited: 7

Mikael Syväjärvi, Anelia Kakanakova-Georgieva, Gholamreza Yazdi, Urban Forsberg and Erik Janzén
  A surface study of wet etched AlGaN epilayers grown by hot-wall MOCVD
  Journal of Crystal Growth, Vol. 300, 2007.


 Web of Science® Times Cited: 1

Andreas Gällström, Björn Magnusson, Patrick Carlsson, Son Tien Nguyen, Anne Henry, Franziska Beyer, Mikael Syväjärvi, Rositsa Yakimova and Erik Janzén
  Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC
  Materials Science Forum, vol. 556-557, 2007.


 Web of Science® Times Cited: 5

Gholamreza Yazdi, Mikael Syväjärvi, Remigijus Vasiliauskas and Rositsa Yakimova
  Employing discontinuous and continuous growth modes for preparation of AlN nanostructures on SiC substrates
  ECSCRM 2006, Newcastle, UK: Materials Science Forum Vols. 556-557, 2007.


Rositsa Yakimova, A.A. Lebedev, A.M. Ivanov, N.B. Strokan and Mikael Syväjärvi
  The limit of SiC detector energy resolution in ions spectrometry
  Materials Science Forum, Vols. 527-529, 2006.


Mikael Syväjärvi, Rositsa Yakimova, A. Arjunan, E. Toupitsyn and T.S. Sudarshan
  Stability of thick layers grown on (1-100) and (11-20) orientations of 4H-SiC
  Materials Science Forum, Vols. 527-529, 2006.


Rositsa Yakimova, Gholam Reza Yazdi, N. Sritirawisarn and Mikael Syväjärvi
  Structure Evolution of 3C-SiC on Cubic and Hexagonal Substrates
  Materials Science Forum, Vols. 527-529, 2006.


Cecilia Vahlberg, Gholam Reza Yazdi, V. Khranovskyy, Rodrigo Jr Petoral, Mikael Syväjärvi, Kajsa Uvdal, Anita Lloyd-Spets and Rositsa Yakimova
  Surface engineering of functional materials for biosensors
  IEEE SENSORS 2005,2005, 2006.


EO Sveinbjornsson, HO Olafsson, G Gudjonsson, F Allerstam, Patrik Nilsson, Mikael Syväjärvi, Rositsa Yakimova, Christer Hallin, T Rodle and R Jos
  High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material
  Materials Science Forum, Vols. 483-485, 2005.


 Web of Science® Times Cited: 6

A Paskaleva, Rafal Ciechonski, Mikael Syväjärvi, E Atanassova and Rositsa Yakimova
  Characterization of 4H-SiC MOS structures with Al2O3 as gate dielectric
  Materials Science Forum, Vols. 483-485, 2005.


 Web of Science® Times Cited: 1

IL Shulpina, NS Savkina, VB Shuman, VV Ratnikov, Mikael Syväjärvi and Rositsa Yakimova
  X-ray diffraction analysis of epigrowth on porous 4H-SiC substrates
  Materials Science Forum, Vols. 483-485, 2005.


Rositsa Yakimova and Mikael Syväjärvi
  Advances in SiC thick epilayer growth for power devices and sensors
  WASMPE 2005,2005, 2005.


Mikael Syväjärvi, L. Nasi, Gholamreza Yazdi, G. Salviati, Morteza Izadifard, Irina Buyanova, Weimin Chen and Rositsa Yakimova
  Formation of ferromagnetic SiC: Mn phases
  Materials Science Forum, Vols. 483-485, 2005.


Cecilia Vahlberg, G. R. Yazdi, V. Khranovsky, Mikael Syväjärvi, Kajsa Uvdal, Anita Lloyd-Spets and Rositsa Yakimova
  Surface engineering of functional materials for biosensors
  IEEE Sensors 2005,2005, 2005.


N.B. Strokan, A.M. Ivanov, N.S. Savkina, A.A. Lebedev, V.V. Kozlovski, Mikael Syväjärvi and Rositsa Yakimova
  Investigation of the SiC transistor and diode nuclear detectors at 8MeV proton irradiation
  Materials Science Forum, Vols. 483-485, 2005.


 Web of Science® Times Cited: 4

I.L. Shulpina, N.S. Savkina, V.B. Shuman, V.V. Ratnikov, Mikael Syväjärvi and Rositsa Yakimova
  X-Ray Diffraction Analysis of Epigrowth on Porous SiC Substrates
  Materials Science Forum, Vols. 483-485, 2005.


S. Dannefaer, V. Avalos, Mikael Syväjärvi and Rositsa Yakimova
  The role of nitrogen in the annealing of vacancies in 4H-SiC
  Materials Science Forum, Vols. 483-485, 2005.


 Web of Science® Times Cited: 2

Rafal Ciechonski, Mikael Syväjärvi, Samuele Porro and Rositsa Yakimova
  Evaluation of On-state Resistance and Boron-related Levels in n-type 4H-SiC
  Materials Science Forum, Vols. 483-485, 2005.


 Web of Science® Times Cited: 2

SY Davydov, NS Savkina, Alexander Lebedev, Mikael Syväjärvi and Rositsa Yakimova
  Simple model for calculation of SiC epitaxial layers growth rate in vacuum.
  Materials Science Forum, Vols. 457-460, 2004.


Rositsa Yakimova, Mikael Syväjärvi, Rafal Ciechonski and Qamar Ul Wahab
  Growth of device quality 4H-SiC by high velocity epitaxy
  Materials Science Forum, Vols. 457-460, 2004.


 Web of Science® Times Cited: 4

D Ziane, JM Bluet, G Guillot, P Godignon, J Monserrat, Rafal Ciechonski, Mikael Syväjärvi, Rositsa Yakimova, L Chen and P Mawby
  Characterizations of SiC/SiO2 interface quality toward high power MOSFETs realization
  Materials Science Forum, Vols. 457-460, 2004.


 Web of Science® Times Cited: 7

Mikael Syväjärvi, V. Stanciu, Morteza Izadifard, Weimin Chen, Irina Buyanova, P. Svedlindh and Rositsa Yakimova
  As-grown 4H-SiC epilayers with magnetic properties
  SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004.


 Web of Science® Times Cited: 14

L Kasamakova-Kolaklieva, Rositsa Yakimova, R Kakanakov, Anelia Kakanakova-Georgieva, Mikael Syväjärvi and Erik Janzén
  Characteristics of Ni Schottky contacts on compensated 4H-SiC layers
  Materials Science Forum, Vols. 433-436, 2003.


V Bikbajevas, V Grivickas, M Stolzer, E Velmre, A Udal, P Grivickas, Mikael Syväjärvi and Rositsa Yakimova
  Impact of phonon drag effect on Seebeck coefficient in p-6H-SiC: Experiment and simulation
  Materials Science Forum, Vols. 433-436, 2003.


Rositsa Yakimova, Mikael Syväjärvi, Tihomir Iakimov, AO Okunev, VE Udal'tsov and Erik Janzén
  Orientation-dependent defect formation in silicon carbide epitaxial layers
  Materials Science Forum, Vols. 433-436, 2003.


N Vouroutzis, Mikael Syväjärvi, J Stoemenos and Rositsa Yakimova
  Characteristics of planar defects in shallow trenches related to the presence of micropipes
  Materials Science Forum, Vols. 433-436, 2003.


S Dannefaer, V Avalos, Mikael Syväjärvi and Rositsa Yakimova
  Vacancies in As-grown and electron-irradiated 4H-SiC epilayers investigated by positron annihilation
  Materials Science Forum, Vols. 433-436, 2003.


Mikael Syväjärvi, Rositsa Yakimova, Rafal Ciechonski, D Davydov, Alexander Lebedev and Erik Janzén
  Origin and behaviour of deep levels in sublimation growth of 4H-SiC layers
  Materials Science Forum, Vols. 433-436, 2003.


Mikael Syväjärvi, Rositsa Yakimova, Rafal Ciechonski, Anelia Kakanakova-Georgieva, Liutauras Storasta and Erik Janzén
  Deep levels in 4H-SiC layers grown by sublimation epitaxy
  Optical Materials, Vol. 23, 2003.


 Web of Science® Times Cited: 1

Mikael Syväjärvi, Rositsa Yakimova, Rafal Ciechonski and Erik Janzén
  Comparison of SiC sublimation epitaxial growth in graphite and TaC coated crucibles
  Diam. relat. Mater. Vol.12, 2003.


 Web of Science® Times Cited: 4

Rafal Ciechonski, Rositsa Yakimova, Mikael Syväjärvi and Erik Janzén
  Effect of Ambient on 4H-SiC Bulk Crystals grown by Sublimation
  Materials Science Forum, Vols. 433-436, 2003.


S Nakagomi, H Shinobu, Lars Unéus, Ingemar Lundström, Lars-Gunnar Ekedahl, Rositsa Yakimova, Mikael Syväjärvi, Anne Henry, Erik Janzén and Anita Lloyd-Spets
  Influence of epitaxial layer on SiC Schottky diode gas sensors operated under high-temperature conditions
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 1

Lars Unéus, S Nakagomi, M Linnarsson, Mona Jensen, BG Svensson, Rositsa Yakimova, Mikael Syväjärvi, Anne Henry, Erik Janzén, Lars-Gunnar Ekedahl, I Lunstrom and Anita Lloyd-Spets
  The effect of hydrogen diffusion in p- and n-type SiC Schottky diodes at high temperatures
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 5

L Kassamakova, R Kakanakov, Rositsa Yakimova, Anelia Kakanakova-Georgieva, Mikael Syväjärvi, Lars Wilzén and Erik Janzén
  Effect of temperature treatment on Au/Pd Schottky contacts to 4H-SiC
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 1

N Vouroutzis, Rositsa Yakimova, Mikael Syväjärvi, H Jacobson, J Stoemenos and Erik Janzén
  Behavior of micropipes during growth in 4H-SiC
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 7

Rositsa Yakimova, H Jacobson, Mikael Syväjärvi, Anelia Kakanakova-Georgieva, Tihomir Iakimov, Chariya Virojanadara, Leif Johansson and Erik Janzén
  Impact of the initial surface conditions on defect appearance in 4H-SiC epilayers
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 5

Anelia Kakanakova-Georgieva, Rositsa Yakimova, J Zhang, Liutauras Storasta, Mikael Syväjärvi and Erik Janzén
  Characteristics of boron in 4H-SiC layers produced by high-temperature techniques
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 5

H Jacobson, Rositsa Yakimova, P Raback, Mikael Syväjärvi, Jens Birch and Erik Janzén
  Lateral enlargement of silicon carbide crystals
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 5

Mikael Syväjärvi, Rositsa Yakimova, Anelia Kakanakova-Georgieva, S.G. Sridhara, M.K. Linnarsson and Erik Janzén
  Study of nitrogen, aluminium and boron incorporation in SiC layers grown by sublimation epitaxy
  J. Cryst. Growth, Vols. 237-239, 2002.


 Web of Science® Times Cited: 6

Rositsa Yakimova, Tihomir Iakimov, Anelia Kakanakova-Gueorguie, Mikael Syväjärvi, Henrik Jacobson, Chariya Virojanadara, Leif Johansson and Erik Janzén
  Effect of High Temperature Annealing on Surface and Bulk Characteristics of 4H-SiC
  <em>Proc. of the 43rd Electronic Material Conference</em>, 2001.


Rositsa Yakimova, Mikael Syväjärvi, M. Pons and Erik Janzén
  Influence of gravity on defect formation in homoepitaxial layers of SiC grown by sublimation
  ESA SP-454, 2001.


Mikael Syväjärvi, Rositsa Yakimova, Anne Henry, Anelia Kakanakova-Georgieva, M Linnarsson and Erik Janzén
  Optical properties of aluminium and nitrogen in compensated 4H-SiC epitaxial layers
  Materials Research Society Symposium Proceedings, Vol. 640, 2001.


Rositsa Yakimova, Mikael Syväjärvi, H Jacobsson, Anelia Kakanakova-Georgieva, S Rendakova, V Dmitriev and Erik Janzén
  Defect evolution in SiC sublimation epitaxy layers grown on LPE buffers with reduced micropipe density
  Materials Research Society Symposium Proceedings, Vol. 640, 2001.


V Grivickas, M Stolzer, E Velmre, A Udal, P Grivickas, Mikael Syväjärvi, Rositsa Yakimova and V Bikbajevas
  Thermopower measurements in 4H-SiC and theoretical calculations considering the phonon drag effect
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 4

Anne Henry, Björn Magnusson, MK Linnarsson, A Ellison, Mikael Syväjärvi, Rositsa Yakimova and Erik Janzén
  Presence of hydrogen in SiC
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 8

Henrik Jacobsson, Rositsa Yakimova, Mikael Syväjärvi, Jens Birch, T Tuomi and Erik Janzén
  High-resolution XRD evaluation of thick 4H-SiC epitaxial layers
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 5

Mikael Syväjärvi, Rositsa Yakimova, Henrik Jacobsson and Erik Janzén
  Growth of 3C-SiC using off-oriented 6H-SiC substrates
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 8

P. Grivickas, A. Galeckas, J. Linnros, Mikael Syväjärvi, Rositsa Yakimova, V. Grivickas and J.A. Tellefsen
  Carrier lifetime investigation in 4H-SiC grown by CVD and sublimation epitaxy
  Materials Science in Semiconductor Processing, Vol. 4, 2001.


 Web of Science® Times Cited: 14

Rositsa Yakimova, Mikael Syväjärvi, Anelia Kakanakova-Georgieva and Erik Janzén
  Stress related morphological defects in SiC epitaxial layers
  Diam. Relat. Mater., Vol. 10, 2001.


 Web of Science® Times Cited: 2

Rositsa Yakimova, Mikael Syväjärvi, Tihomir Iakimov, Henrik Jacobsson, Anelia Kakanakova-Georgieva, P. Raback and Erik Janzén
  Growth of silicon carbide: Process-related defects
  Appl. Surf. Sci., Vol. 184, 2001.


 Web of Science® Times Cited: 11

Anelia Kakanakova-Georgieva, Rositsa Yakimova, Mikael Syväjärvi and Erik Janzén
  Behavior of background impurities in thick 4H-SiC epitaxial layers
  Appl. Surf. Sci., Vol. 184, 2001.


 Web of Science® Times Cited: 4

D.V. Davidov, A.A. Lebedev, N.S. Savkina, A.S. Tregubova, M.P. Scheglov, Rositsa Yakimova, Mikael Syväjärvi and Erik Janzén
  Deep centers connected with structural and radiation defects in n-SiC epilayers
  <em>Proc. III Intern. Seminar on SiC and related Materials</em>, 2000.


Mikael Syväjärvi, Rositsa Yakimova, Henrik Jacobsson and Erik Janzén
  High growth rate epitaxy of 4H-SiC layers with improved crystal quality
  <em>Proc. III Intern. Seminar on SiC and Related Materials</em>, 2000.


Rositsa Yakimova, Mikael Syväjärvi, Tihomir Iakimov, Henrik Jacobsson and Erik Janzén
  Crystal perfection aspects of silicon carbide growth
  <em>Proc. III Intern. Seminar on SiC and Related Materials</em>, 2000.


Mikael Syväjärvi, Rositsa Yakimova, Tihomir Iakimov and Erik Janzén
  Characterization of anisotropic step-bunching on as-grown SiC surfaces
  Materials Science Forum, Vols. 338-343, 2000.


 Web of Science® Times Cited: 3

Rositsa Yakimova, Mikael Syväjärvi, S Rendakova, VA Dimitriev, Anne Henry and Erik Janzén
  Micropipe healing in liquid phase epitaxial growth of SiC
  Materials Science Forum, Vols. 338-342, 2000.


 Web of Science® Times Cited: 24

Mikael Syväjärvi, Rositsa Yakimova, Henrik Jacobsson, MK Linnarsson, Anne Henry and Erik Janzén
  High growth rate epitaxy of thick 4H-SiC layers
  Materials Science Forum, Vols. 338-342, 2000.


 Web of Science® Times Cited: 6

P Raback, Rositsa Yakimova, Mikael Syväjärvi, Tihomir Iakimov, R Nieminen and Erik Janzén
  Considerations on the crystal morphology in the sublimation growth of SiC
  Materials Science Forum, Vols. 338-343, 2000.


Ph.D. Theses

Remigijus Vasiliauskas
  Sublimation Growth and Performance of Cubic Silicon Carbide
  2012.


  Fulltext PDF

Gholamreza Yazdi
  Growth and Characterization of AlN: From Nano Structures to Bulk Material
  2008.


  Fulltext PDF

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