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Publications for Mengyao Xie

Co-author map based on Web of Sciences articles 2007-

Publications mentioned in social media 1 times*

Journal Articles

Mengyao Xie, M. Schubert, Jun Lu, Per O A Persson, Vallery Stanishev, Ching-Lien Hsiao, L. C. Chen, W. J. Schaff and Vanya Darakchieva
  Assessing structural, free-charge carrier, and phonon properties of mixed-phase epitaxial films: The case of InN
  Physical Review B. Condensed Matter and Materials Physics, 2014, 90(19), 195306.
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 Web of Science® Times Cited: 5

Mengyao Xie, Ben Sedrine, L. Hong, Bo Monemar, S. Schöche, T. Hofmann, M. Schubert, X Wang, A. Yoshikawa, K. Wang, T. Araki, Vanya Darakchieva and Y. Nanishi
  Effect of Mg doping on the structural and free-charge carrier properties of InN
  Journal of Applied Physics, 2014, 115(16), 163504.
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 Web of Science® Times Cited: 7

Mengyao Xie, Ferenc Tasnadi, Igor Abrikosov, Lars Hultman and Vanya Darakchieva
  Elastic constants, composition, and piezolectric polarization in InxAl1-xN: From ab initio calculations to experimental implications for the applicability of Vegards rule
  Physical Review B. Condensed Matter and Materials Physics, 2012, 86(15), 155310.
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 Web of Science® Times Cited: 16

Vanya Darakchieva, K Lorenz, Mengyao Xie, E Alves, W J Schaff, T Yamaguchi, Y Nanishi, S Ruffenach, M Moret and O Briot
  Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN
 Web of Science® Times Cited: 3

Vanya Darakchieva, Mengyao Xie, D Rogalla, H-W Becker, K Lorenz, E Alves, S Ruffenach, M Moret and O Briot
  Free electron properties and hydrogen in InN grown by MOVPE
 Web of Science® Times Cited: 6

Justinas Palisaitis, Ching-Lien Hsiao, Muhammad Junaid, Mengyao Xie, Vanya Darakchieva, Jean-Francois Carlin, Nicolas Grandjean, Jens Birch, Lars Hultman and Per O.Å. Persson
  Standard-free composition measurements of Alx In1–xN by low-loss electron energy loss spectroscopy
  physica status solidi (RRL) – Rapid Research Letters, 2011, 5(2), 50-52.
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 Web of Science® Times Cited: 14

Vanya Darakchieva, K Lorenz, Mengyao Xie, E Alves, C L Hsiao, L C Chen, L W Tu, W J Schaff, T Yamaguchi and Y Nanishi
  Unintentional incorporation of hydrogen in wurtzite InN with different surface orientations
  Journal of Applied Physics, 2011, 110(6), 063535.
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 Web of Science® Times Cited: 3

Vanya Darakchieva, Mengyao Xie, N Franco, F Giuliani, B Nunes, E Alves, C L Hsiao, L C Chen, T Yamaguchi, Y Takagi, K Kawashima and Y Nanishi
  Structural anisotropy of nonpolar and semipolar InN epitaxial layers
  JOURNAL OF APPLIED PHYSICS, 2010, 108(7), 073529.
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 Web of Science® Times Cited: 17

Vanya Darakchieva, N P Barradas, Mengyao Xie, K Lorenz, E Alves, M Schubert, Per Persson, Finn Giuliani, F Munnik, Ching-Lien Hsiao, L W Tu and W J Schaff
  Role of impurities and dislocations for the unintentional n-type conductivity in InN
  PHYSICA B-CONDENSED MATTER, 2009, 404(22), 4476-4481.
 Web of Science® Times Cited: 12

Vanya Darakchieva, Manfred Beckers, Mengyao Xie, Lars Hultman, Bo Monemar, J-. F. Carlin, E. Feltin, M. Gonschorek and N. Grandjean
  Effects of strain and composition on the lattice parameters and applicability of Vegard's rule in Al-rich Al1-x Inx N films grown on sapphire
  Journal of Applied Physics, 2008, 103(10), 103513.
 Web of Science® Times Cited: 39

Vanya Darakchieva, Mengyao Xie, Ferenc Tasnadi, Igor Abrikosov, Lars Hultman, Bo Monemar, J Kamimura and K Kishino
  Lattice parameters, deviations from Vegards rule, and E-2 phonons in InAlN
  Applied Physics Letters, 2008, 93(26), 261908.
 Web of Science® Times Cited: 31

Conference Articles

Mengyao Xie, Mengyao Xie, Vanya Darakchieva, Vanya Darakchieva, Bo Monemar, Bo Monemar, J. Kamimura, J. Kamimura, K. Kishino and K. Kishino
  Lattice parameters and optical phonons
  IWN 2008,2008, 2008.

Vanya Darakchieva, Manfred Beckers, Lars Hultman, Mengyao Xie, Bo Monemar, J.-F Carlin and N. Grandjean
  Strain and compositional analyzes of Al-rich Al1-xInxN alloys grown by MOVPE: impact on the applicability of Vegard's rule
  Physica Status Solidi (C) Current Topics in Solid State Physics, 2008.

 Web of Science® Times Cited: 1

Vanya Darakchieva, T. Hofmann, M. Schubert, Bo Sernelius, Finn Giuliani, Mengyao Xie, Per O. A. Persson, Bo Monemar, W. J. Schaff, C.-L. Hsiao, L.-C. Chen and Y Nanishi
  Unravelling the free electron behavior in InN
  Optoelectronic and Microelectronic Materials and Devices, 2008, 2008.

Ph.D. Theses

Mengyao Xie
  Structural and elastic properties of InN and InAlN with different surface orientations and doping

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* Social media data based on publications from 2011 to present and with a DOI; data delivered by Altmetric.com.


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Last updated: 2017-02-21