Publications for Mengyao Xie
Co-author map based on ISI articles 2007-
Journal Articles
Mengyao Xie, Ferenc Tasnadi, Igor Abrikosov, Lars Hultman and Vanya Darakchieva
Elastic constants, composition, and piezolectric polarization in InxAl1-xN: From ab initio calculations to experimental implications for the applicability of Vegards rule
Physical Review B. Condensed Matter and Materials Physics, 2012, 86(15), 155310.
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Vanya Darakchieva, K Lorenz, Mengyao Xie, E Alves, W J Schaff, T Yamaguchi, Y Nanishi, S Ruffenach, M Moret and O Briot
Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2012, 209(1), 91-94.
Web of Science® Times Cited: 1 |
Vanya Darakchieva, K Lorenz, Mengyao Xie, E Alves, C L Hsiao, L C Chen, L W Tu, W J Schaff, T Yamaguchi and Y Nanishi
Unintentional incorporation of hydrogen in wurtzite InN with different surface orientations
Journal of Applied Physics, 2011, 110(6), 063535.
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Vanya Darakchieva, Mengyao Xie, D Rogalla, H-W Becker, K Lorenz, E Alves, S Ruffenach, M Moret and O Briot
Free electron properties and hydrogen in InN grown by MOVPE
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208(5), 1179-1182.
Web of Science® Times Cited: 3 |
Justinas Palisaitis, Ching-Lien Hsiao, Muhammad Junaid, Mengyao Xie, Vanya Darakchieva, Jean-Francois Carlin, Nicolas Grandjean, Jens Birch, Lars Hultman and Per O.Å. Persson
Standard-free composition measurements of Alx In1–xN by low-loss electron energy loss spectroscopy
physica status solidi (RRL) – Rapid Research Letters, 2011, 5(2), 50-52.
Fulltext Web of Science® Times Cited: 5 |
Vanya Darakchieva, Mengyao Xie, N Franco, F Giuliani, B Nunes, E Alves, C L Hsiao, L C Chen, T Yamaguchi, Y Takagi, K Kawashima and Y Nanishi
Structural anisotropy of nonpolar and semipolar InN epitaxial layers
JOURNAL OF APPLIED PHYSICS, 2010, 108(7), 073529.
Fulltext Web of Science® Times Cited: 9 |
Vanya Darakchieva, N P Barradas, Mengyao Xie, K Lorenz, E Alves, M Schubert, Per Persson, Finn Giuliani, F Munnik, Ching-Lien Hsiao, L W Tu and W J Schaff
Role of impurities and dislocations for the unintentional n-type conductivity in InN
PHYSICA B-CONDENSED MATTER, 2009, 404(22), 4476-4481.
Web of Science® Times Cited: 8 |
Vanya Darakchieva, Mengyao Xie, Ferenc Tasnadi, Igor Abrikosov, Lars Hultman, Bo Monemar, J Kamimura and K Kishino
Lattice parameters, deviations from Vegards rule, and E-2 phonons in InAlN
Applied Physics Letters, 2008, 93(26), 261908.
Web of Science® Times Cited: 16 |
Vanya Darakchieva, Manfred Beckers, Mengyao Xie, Lars Hultman, Bo Monemar, J-. F. Carlin, E. Feltin, M. Gonschorek and N. Grandjean
Effects of strain and composition on the lattice parameters and applicability of Vegard's rule in Al-rich Al1-x Inx N films grown on sapphire
Journal of Applied Physics, 2008, 103(10), 103513.
Web of Science® Times Cited: 25 |
Conference Articles
Mengyao Xie, Mengyao Xie, Vanya Darakchieva, Vanya Darakchieva, Bo Monemar, Bo Monemar, J. Kamimura, J. Kamimura, K. Kishino and K. Kishino
Lattice parameters and optical phonons
IWN 2008,2008, 2008.
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Vanya Darakchieva, Manfred Beckers, Lars Hultman, Mengyao Xie, Bo Monemar, J.-F Carlin and N. Grandjean
Strain and compositional analyzes of Al-rich Al1-xInxN alloys grown by MOVPE: impact on the applicability of Vegard's rule
7th Int. Conference on Nitride Semiconductors ICNS-7,2007, 2008.
Web of Science® Times Cited: 1
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Vanya Darakchieva, T. Hofmann, M. Schubert, Bo Sernelius, Finn Giuliani, Mengyao Xie, Per O. A. Persson, Bo Monemar, W. J. Schaff, C.-L. Hsiao, L.-C. Chen and Y Nanishi
Unravelling the free electron behavior in InN
Optoelectronic and Microelectronic Materials and Devices, 2008, 2008.
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Ph.D. Theses
Ph.D., Lic. Theses
