Publications for Liutauras Storasta
Co-author map based on ISI articles 2007-

Keywords

traps transient temperature spectroscopy sic recombination photoluminescence optical irradiation implantation hole ev electrical doping defects defect carrier boron annealing 4h-sic

Journal Articles

Liutauras Storasta, F. H. C. Carlsson, Peder Bergman and Erik Janzén
  Observation of recombination enhanced defect annealing in 4H-SiC
  Applied Physics Letters, 2005, 86(9), 91903.
 Web of Science® Times Cited: 11

Liutauras Storasta, J.R. Bergman, Erik Janzén, Anne Henry and J. Lu
  Deep levels created by low energy electron Irradiation in 4H-SiC
  Journal of Applied Physics, 2004, 96(9), 4909-4915.
 Web of Science® Times Cited: 121

Irina Buyanova, Morteza Izadifard, Liutauras Storasta, Weimin Chen, J. Kim, F. Ren, G. Thaler, C. R. Abernathy, S. J. Pearton, C.-C. Pan, G.-T. Chen, J.-I. Chyi and J. M. Zavada
  Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes
  Journal of Electronic Materials, 2004, 33(5), 467-471.
 Web of Science® Times Cited: 8

J. Zhang, Liutauras Storasta, Peder Bergman, Tien Son Nguyen and Erik Janzén
  Electrically active defects in n-type 4H-silicon carbide grown in a vertical hot-wall reactor
  Journal of Applied Physics, 2003, 93(8), 4708-4714.
 Web of Science® Times Cited: 92

A. Hallen, M.S. Janson, A.Yu. Kuznetsov, D. Aberg, M.K. Linnarsson, B.G. Svensson, Per Persson, Fredrik Carlsson, Liutauras Storasta, Peder Bergman, S.G Sridhara and Y. Zhang
  Ion implantation of silicon carbide
  Nuclear Instruments and Methods in Physics Reseach B, 2002, 186(1-4), 186-194.
 Web of Science® Times Cited: 34

Matthias Wagner, Ivan Gueorguiev Ivanov, Liutauras Storasta, Peder Bergman, Björn Magnusson, Weimin Chen and Erik Janzén
  Photoluminescence upconversion in 4H-SiC
  Applied Physics Letters, 2002, 81(14), 2547.
 Web of Science® Times Cited: 1

Liutauras Storasta, Fredrik Carlsson, S.G. Sridhara, Peder Bergman, Anne Henry, T. Egilsson, A. Hallen and Erik Janzén
  Pseudodonor nature of the D1 defect in 4H-SiC
  Applied Physics Letters, 2001, 78(1), 46-48.
 Web of Science® Times Cited: 67

Chapters in Books

Son Tien Nguyen, Matthias Wagner, Carl Hemmingsson, Liutauras Storasta, Björn Magnusson, Weimin Chen, S. Greulich-Weber, J.-M. Spaeth and Erik Janzén
  Electronic structure of deep defects in SiC
  Silicon Carbide: Recent Major Advances, Springer Verlag, 2004, -899.


Conference Articles

Liutauras Storasta, R Aleksiejunas, M Sudzius, A Kadys, T Malinauskas, K Jarasiunas, Björn Magnusson and Erik Janzén
  Nonequilibrium carrier diffusion and recombination in heavily-doped and semi-insulating bulk HTCVD grown 4H-SiC crystals
  Materials Science Forum, Vols. 483-485, 2005.


 Web of Science® Times Cited: 2

Liutauras Storasta, Fredrik Carlsson, Peder Bergman and Erik Janzén
  Recombination enhanced defect annealing in 4H-SiC
  Materials Science Forum, Vols. 483-485, 2005.


 Web of Science® Times Cited: 3

S.M. Bishop, E.A. Preble, Christer Hallin, Anne Henry, W. Sarney, H.-R. Chang, Liutauras Storasta, Henrik Jacobson, Z.J. Reitmeier, B.P. Wagner, Erik Janzén and R.F. Davis
  Characterization and comparison of 4H-SiC(112 over-bar 0) and 4H-SiC(0001) 8° off-axis substrates and homoepitaxial films
  Materials Research Society Symposium Proceedings, Vol. 815 Silicon Carbide 2004 - Materials, Processing and Devices,2004, 2004.


S.M. Bishop, E.A. Preble, Christer Hallin, Anne Henry, Liutauras Storasta, Henrik Jacobson, B.P. Wagner, Z.J. Reitmeier, Erik Janzén and R.F. Davis
  Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization
  Materials Science Forum, Vols. 457-460, 2004.


 Web of Science® Times Cited: 2

Liutauras Storasta, Anne Henry, Peder Bergman and Erik Janzén
  Investigations of possible nitrogen participation in the Z1/Z2 defect in 4H-SiC
  Mater. Sci. Forum, Vol. 457-460, 2004.


 Web of Science® Times Cited: 15

L. Kassamakova-Kolaklieva, Liutauras Storasta, Ivan Gueorguiev Ivanov, Björn Magnusson, S. Contreras, C. Consejo, J. Pernot, M. Zielinski and Erik Janzén
  Temperature-Dependent Hall Effect Measurements in Low - Compensated p-Type 4H-SiC
  Mater. Sci. Forum, Vol. 457-460, 2004.


 Web of Science® Times Cited: 4

A Kakanakova-Georgieva, Urban Forsberg, Christer Hallin, Per Persson, Liutauras Storasta, Galia Pozina, Jens Birch, Lars Hultman and Erik Janzén
  Implementation of hot-wall MOCVD in the growth of high-quality GaN on SiC
  Materials Science Forum, Vols. 433-436, 2003.


 Web of Science® Times Cited: 3

Liutauras Storasta, Björn Magnusson, Anne Henry, MK Linnarsson, JP Bergman and Erik Janzén
  Correlation between electrical and optical mapping of boron related complexes in 4H-SiC
  Materials Science Forum, Vols. 433-436, 2003.


Matthias Wagner, Ivan Gueorguiev Ivanov, Liutauras Storasta, JP Bergman, Björn Magnusson, Weimin Chen and Erik Janzén
  Photoluminescence up-conversion processes in SiC
  Materials Science Forum, Vols. 433-436, 2003.


Anne Henry, Liutauras Storasta and Erik Janzén
  Nitrogen delta doping in 4H-SiC epilayers
  Materials Science Forum, Vols. 433-436, 2003.


A Ellison, Björn Magnusson, Tien Son Nguyen, Liutauras Storasta and Erik Janzén
  HTCVD grown semi-insulating SiC substrates
  Materials Science Forum, Vols. 433-436, 2003.


Mikael Syväjärvi, Rositsa Yakimova, Rafal Ciechonski, Anelia Kakanakova-Georgieva, Liutauras Storasta and Erik Janzén
  Deep levels in 4H-SiC layers grown by sublimation epitaxy
  Optical Materials, Vol. 23, 2003.


 Web of Science® Times Cited: 1

Erik Janzén, Ivan Gueorguiev Ivanov, Son Tien Nguyen, Björn Magnusson, Z Zolnai, Anne Henry, Peder Bergman, Liutauras Storasta and Fredrik Carlsson
  Defects in SiC
  Physica B: Condensed Matter, Vols. 340-342, 2003.


 Web of Science® Times Cited: 14

Ivan Gueorguiev Ivanov, J Zhang, Liutauras Storasta and Erik Janzén
  Photoconductivity of lightly-doped and semi-insulating 4H-SiC and the free exciton binding energy
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 1

Liutauras Storasta, JP Bergman, Christer Hallin and Erik Janzén
  Electrical activity of residual boron in silicon carbide
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 19

Anelia Kakanakova-Georgieva, Rositsa Yakimova, J Zhang, Liutauras Storasta, Mikael Syväjärvi and Erik Janzén
  Characteristics of boron in 4H-SiC layers produced by high-temperature techniques
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 5

JP Bergman, H Jakobsson, Liutauras Storasta, Fredrik Carlsson, Björn Magnusson, S Sridhara, Galia Pozina, H Lendenmann and Erik Janzén
  Characterisation and defects in silicon carbide
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 31

Urban Forsberg, Anne Henry, N. Rorsman, J. Eriksson, M. K. Linnarsson, Örjan Danielsson, Liutauras Storasta and Erik Janzén
  Growth and characterisation 4H-SiC MESFET structures grown by Hot-Wall CVD
  Proc. of the MRS 2000 Fall Meeting, 2001.


Björn Magnusson, A. Ellison, Liutauras Storasta and Erik Janzén
  Infrared absorption and annealing behavior of semi-insulating 4H SiC HTCVD substrates
  <em>Proc. of the MRS Spring Meeting (2001), Vol. <em>680E</em></em>, 2001.


A. Ellison, Björn Magnusson, Carl Hemmingsson, W. Magnusson, Tihomir Iakimov, Liutauras Storasta, Anne Henry, N. Henelius and Erik Janzén
  HTCVD Growth of Semi-Insulating 4H-SiC Crystals With Low Defect Density
  Mat. Res. Soc. Symp. Proc., Vol. 640, 2001.


Fredrik Carlsson, Liutauras Storasta, Björn Magnusson, Peder Bergman, K Skold and Erik Janzén
  Neutron irradiation of 4H SiC
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 5

BG Svensson, A Hallen, MK Linnarsson, AY Kuznetsov, MS Janson, D Aberg, J Osterman, Per Persson, Lars Hultman, Liutauras Storasta, Fredrik Carlsson, JP Bergman, C Jagadish and E Morvan
  Doping of silicon carbide by ion implantation
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 15

D Aberg, Liutauras Storasta, A Hallen and BG Svensson
  Implantation temperature dependent deep level defects in 4H-SiC
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 8

Liutauras Storasta, Fredrik Carlsson, SG Sridhara, D Aberg, Peder Bergman, A Hallen and Erik Janzén
  Proton irradiation induced defects in 4H-SiC
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 14

Peder Bergman, Liutauras Storasta, Fredrik Carlsson, S. Sridhara, Björn Magnusson and Erik Janzén
  Defects in 4H silicon carbide
  Physica B, Vols. 308-310, 2001.


 Web of Science® Times Cited: 9

Fredrik Carlsson, Liutauras Storasta, Peder Bergman and Erik Janzén
  Trapped carrier electroluminescence (TraCE) - A novel method for correlating electrical and optical measurements
  Physica B, Vols. 308-310, 2001.


 Web of Science® Times Cited: 1

Peder Bergman, A. Ellison, Anne Henry, Liutauras Storasta and Erik Janzén
  The role of defects on optical and electrical properties of SiC
  SIMC-XI 2000, 2000.


Fredrik Carlsson, Liutauras Storasta, Carl Hemmingsson, Peder Bergman and Erik Janzén
  Electroluminescence from implanted and epitaxially grown pn-diodes
  Materials Science Forum, Vols. 338-343, 2000.


 Web of Science® Times Cited: 2