Publication List for for Liutauras Storasta

Publications for Liutauras Storasta
Co-author map based on ISI articles 2007-

Journal Articles

Liutauras Storasta, F. H. C. Carlsson, Peder Bergman and Erik Janzén
Observation of recombination enhanced defect annealing in 4H-SiC
Applied Physics Letters, 2005, 86(9), 91903.

Web of Science® Times Cited: 11

Liutauras Storasta, J.R. Bergman, Erik Janzén, Anne Henry and J. Lu
Deep levels created by low energy electron Irradiation in 4H-SiC
Journal of Applied Physics, 2004, 96(9), 4909-4915.

Web of Science® Times Cited: 113

Irina Buyanova, Morteza Izadifard, Liutauras Storasta, Weimin Chen, J. Kim, F. Ren, G. Thaler, C. R. Abernathy, S. J. Pearton, C.-C. Pan, G.-T. Chen, J.-I. Chyi and J. M. Zavada
Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes
Journal of Electronic Materials, 2004, 33(5), 467-471.

Web of Science® Times Cited: 8

J. Zhang, Liutauras Storasta, Peder Bergman, Tien Son Nguyen and Erik Janzén
Electrically active defects in n-type 4H-silicon carbide grown in a vertical hot-wall reactor
Journal of Applied Physics, 2003, 93(8), 4708-4714.

Web of Science® Times Cited: 88

A. Hallen, M.S. Janson, A.Yu. Kuznetsov, D. Aberg, M.K. Linnarsson, B.G. Svensson, Per Persson, Fredrik Carlsson, Liutauras Storasta, Peder Bergman, S.G Sridhara and Y. Zhang
Ion implantation of silicon carbide
Nuclear Instruments and Methods in Physics Reseach B, 2002, 186(1-4), 186-194.

Web of Science® Times Cited: 32

Matthias Wagner, Ivan Gueorguiev Ivanov, Liutauras Storasta, Peder Bergman, Björn Magnusson, Weimin Chen and Erik Janzén
Photoluminescence upconversion in 4H-SiC
Applied Physics Letters, 2002, 81(14), 2547.

Web of Science® Times Cited: 1

Liutauras Storasta, Fredrik Carlsson, S.G. Sridhara, Peder Bergman, Anne Henry, T. Egilsson, A. Hallen and Erik Janzén
Pseudodonor nature of the D1 defect in 4H-SiC
Applied Physics Letters, 2001, 78(1), 46-48.

Web of Science® Times Cited: 64

Chapters in Books

Son Tien Nguyen, Matthias Wagner, Carl Hemmingsson, Liutauras Storasta, Björn Magnusson, Weimin Chen, S. Greulich-Weber, J.-M. Spaeth and Erik Janzén
Electronic structure of deep defects in SiC
Silicon Carbide: Recent Major Advances, Springer Verlag, 2004, .

Conference Articles

Liutauras Storasta, R Aleksiejunas, M Sudzius, A Kadys, T Malinauskas, K Jarasiunas, Björn Magnusson and Erik Janzén
Nonequilibrium carrier diffusion and recombination in heavily-doped and semi-insulating bulk HTCVD grown 4H-SiC crystals
Materials Science Forum, Vols. 483-485, 2005.

Web of Science® Times Cited: 2

Liutauras Storasta, Fredrik Carlsson, Peder Bergman and Erik Janzén
Recombination enhanced defect annealing in 4H-SiC
Materials Science Forum, Vols. 483-485, 2005.

Web of Science® Times Cited: 3

S.M. Bishop, E.A. Preble, Christer Hallin, Anne Henry, W. Sarney, H.-R. Chang, Liutauras Storasta, Henrik Jacobson, Z.J. Reitmeier, B.P. Wagner, Erik Janzén and R.F. Davis
Characterization and comparison of 4H-SiC(112 over-bar 0) and 4H-SiC(0001) 8° off-axis substrates and homoepitaxial films
Materials Research Society Symposium Proceedings, Vol. 815 Silicon Carbide 2004 - Materials, Processing and Devices,2004, 2004.

S.M. Bishop, E.A. Preble, Christer Hallin, Anne Henry, Liutauras Storasta, Henrik Jacobson, B.P. Wagner, Z.J. Reitmeier, Erik Janzén and R.F. Davis
Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization
Materials Science Forum, Vols. 457-460, 2004.

Web of Science® Times Cited: 2

Liutauras Storasta, Anne Henry, Peder Bergman and Erik Janzén
Investigations of possible nitrogen participation in the Z1/Z2 defect in 4H-SiC
Mater. Sci. Forum, Vol. 457-460, 2004.

Web of Science® Times Cited: 15

L. Kassamakova-Kolaklieva, Liutauras Storasta, Ivan Gueorguiev Ivanov, Björn Magnusson, S. Contreras, C. Consejo, J. Pernot, M. Zielinski and Erik Janzén
Temperature-Dependent Hall Effect Measurements in Low - Compensated p-Type 4H-SiC
Mater. Sci. Forum, Vol. 457-460, 2004.

Web of Science® Times Cited: 4

A Kakanakova-Georgieva, Urban Forsberg, Christer Hallin, Per Persson, Liutauras Storasta, Galia Pozina, Jens Birch, Lars Hultman and Erik Janzén
Implementation of hot-wall MOCVD in the growth of high-quality GaN on SiC
Materials Science Forum, Vols. 433-436, 2003.

Web of Science® Times Cited: 3

Liutauras Storasta, Björn Magnusson, Anne Henry, MK Linnarsson, JP Bergman and Erik Janzén
Correlation between electrical and optical mapping of boron related complexes in 4H-SiC
Materials Science Forum, Vols. 433-436, 2003.

Matthias Wagner, Ivan Gueorguiev Ivanov, Liutauras Storasta, JP Bergman, Björn Magnusson, Weimin Chen and Erik Janzén
Photoluminescence up-conversion processes in SiC
Materials Science Forum, Vols. 433-436, 2003.

Anne Henry, Liutauras Storasta and Erik Janzén
Nitrogen delta doping in 4H-SiC epilayers
Materials Science Forum, Vols. 433-436, 2003.

A Ellison, Björn Magnusson, Tien Son Nguyen, Liutauras Storasta and Erik Janzén
HTCVD grown semi-insulating SiC substrates
Materials Science Forum, Vols. 433-436, 2003.

Mikael Syväjärvi, Rositsa Yakimova, Rafal Ciechonski, Anelia Kakanakova-Georgieva, Liutauras Storasta and Erik Janzén
Deep levels in 4H-SiC layers grown by sublimation epitaxy
Optical Materials, Vol. 23, 2003.

Web of Science® Times Cited: 1

Erik Janzén, Ivan Gueorguiev Ivanov, Son Tien Nguyen, Björn Magnusson, Z Zolnai, Anne Henry, Peder Bergman, Liutauras Storasta and Fredrik Carlsson
Defects in SiC
Physica B: Condensed Matter, Vols. 340-342, 2003.

Web of Science® Times Cited: 14

Ivan Gueorguiev Ivanov, J Zhang, Liutauras Storasta and Erik Janzén
Photoconductivity of lightly-doped and semi-insulating 4H-SiC and the free exciton binding energy
Materials Science Forum, Vols. 389-393, 2002.

Web of Science® Times Cited: 1

Liutauras Storasta, JP Bergman, Christer Hallin and Erik Janzén
Electrical activity of residual boron in silicon carbide
Materials Science Forum, Vols. 389-393, 2002.

Web of Science® Times Cited: 18

Anelia Kakanakova-Georgieva, Rositsa Yakimova, J Zhang, Liutauras Storasta, Mikael Syväjärvi and Erik Janzén
Characteristics of boron in 4H-SiC layers produced by high-temperature techniques
Materials Science Forum, Vols. 389-393, 2002.

Web of Science® Times Cited: 5

JP Bergman, H Jakobsson, Liutauras Storasta, Fredrik Carlsson, Björn Magnusson, S Sridhara, Galia Pozina, H Lendenmann and Erik Janzén
Characterisation and defects in silicon carbide
Materials Science Forum, Vols. 389-393, 2002.

Web of Science® Times Cited: 30

Urban Forsberg, Anne Henry, N. Rorsman, J. Eriksson, M. K. Linnarsson, Örjan Danielsson, Liutauras Storasta and Erik Janzén
Growth and characterisation 4H-SiC MESFET structures grown by Hot-Wall CVD
Proc. of the MRS 2000 Fall Meeting, 2001.

Björn Magnusson, A. Ellison, Liutauras Storasta and Erik Janzén
Infrared absorption and annealing behavior of semi-insulating 4H SiC HTCVD substrates
<em>Proc. of the MRS Spring Meeting (2001), Vol. <em>680E</em></em>, 2001.

A. Ellison, Björn Magnusson, Carl Hemmingsson, W. Magnusson, Tihomir Iakimov, Liutauras Storasta, Anne Henry, N. Henelius and Erik Janzén
HTCVD Growth of Semi-Insulating 4H-SiC Crystals With Low Defect Density
Mat. Res. Soc. Symp. Proc., Vol. 640, 2001.

Fredrik Carlsson, Liutauras Storasta, Björn Magnusson, Peder Bergman, K Skold and Erik Janzén
Neutron irradiation of 4H SiC
Materials Science Forum, Vols. 353-356, 2001.

Web of Science® Times Cited: 5

BG Svensson, A Hallen, MK Linnarsson, AY Kuznetsov, MS Janson, D Aberg, J Osterman, Per Persson, Lars Hultman, Liutauras Storasta, Fredrik Carlsson, JP Bergman, C Jagadish and E Morvan
Doping of silicon carbide by ion implantation
Materials Science Forum, Vols. 353-356, 2001.

Web of Science® Times Cited: 15

D Aberg, Liutauras Storasta, A Hallen and BG Svensson
Implantation temperature dependent deep level defects in 4H-SiC
Materials Science Forum, Vols. 353-356, 2001.

Web of Science® Times Cited: 8

Liutauras Storasta, Fredrik Carlsson, SG Sridhara, D Aberg, Peder Bergman, A Hallen and Erik Janzén
Proton irradiation induced defects in 4H-SiC
Materials Science Forum, Vols. 353-356, 2001.

Web of Science® Times Cited: 13

Peder Bergman, Liutauras Storasta, Fredrik Carlsson, S. Sridhara, Björn Magnusson and Erik Janzén
Defects in 4H silicon carbide
Physica B, Vols. 308-310, 2001.

Web of Science® Times Cited: 9

Fredrik Carlsson, Liutauras Storasta, Peder Bergman and Erik Janzén
Trapped carrier electroluminescence (TraCE) - A novel method for correlating electrical and optical measurements
Physica B, Vols. 308-310, 2001.

Web of Science® Times Cited: 1

Peder Bergman, A. Ellison, Anne Henry, Liutauras Storasta and Erik Janzén
The role of defects on optical and electrical properties of SiC
SIMC-XI 2000, 2000.

Fredrik Carlsson, Liutauras Storasta, Carl Hemmingsson, Peder Bergman and Erik Janzén
Electroluminescence from implanted and epitaxially grown pn-diodes
Materials Science Forum, Vols. 338-343, 2000.

Web of Science® Times Cited: 2