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Publications for Lars Unéus

Co-author map based on Web of Sciences articles 2007-

Journal Articles

Sang-Kwon Lee, Eun-Kyung Suh, Namn-Kyo Cho, Hyo-Duck Park, Lars Unéus and Anita Lloyd-Spets
  Comparison study of ohmic contacts to 4H-silicon carbide in oxidizing ambient for harsh environment gas sensor applications
  Solid-State Electronics, 2005, 49, 1297-1301.
 Web of Science® Times Cited: 7

Lars Unéus, Tom Artursson, Mattias Mattsson, Per Ljung, Roger Wigren, Per Mårtensson, Martin Holmberg, Ingemar Lundström and Anita Lloyd-Spets
  Evaluation of on-line flue gas measurements by MISiCFET and metal-oxide sensors in boilers
  IEEE Sensors Journal, 2005, 5(1), 75-81.
 Web of Science® Times Cited: 14

M. S. Janson, M. K. Linnarsson, A. Hallen, B. G. Svensson, N. Achtziger, Lars Unéus, Anita Lloyd-Spets and Urban Forsberg
  Hydrogen in the wide bandgap semiconductor silicon carbide
  Physica Scripta, 2004, T108, 99-112.
 Web of Science® Times Cited: 4

S Nakagomi, M Takahashi, Y Kokubun, Lars Unéus, S Savage, Helena Wingbrant, M Andersson, Ingemar Lundström, Mikael Löfdahl and Anita Lloyd-Spets
  Substrate bias amplification of a SiC junction field effect transistor with a catalytic gate electrode
  Materials Science Forum, 2004, 457-460, 1507-1510.
 Web of Science® Times Cited: 4

Anita Lloyd-Spets, Lars Unéus, H Svenningstorp, Helena Wingbrant, CI Harris, P Salomonsson, P Tengstrom, P Martensson, P Ljung, M Mattsson, JH Visser, SG Ejakov, D Kubinski, Lars-Gunnar Ekedahl, Ingemar Lundström and SM Savage
  MISiCFET chemical gas sensors for high temperature and corrosive environment applications
  Materials Science Forum, 2002, 389-3, 1415-1418.
 Web of Science® Times Cited: 7

Helena Wingbrant, Lars Unéus, M Andersson, J Cerda, S Savage, H Svenningstorp, P Salomonsson, P Ljung, M Mattsson, JH Visser, D Kubinski, R Soltis, SG Ejakov, D Moldin, Mikael Löfdahl, M Einehag, M Persson and Anita Lloyd-Spets
  MISiCFET chemical sensors for applications in exhaust gases and flue gases
  Materials Science Forum, 2002, 433-4, 953-956.

Anita Lloyd-Spets, Lars Unéus, H Svenningstorp, P Tobias, Lars-Gunnar Ekedahl, O Larsson, A Goras, S Savage, C Harris, P Martensson, R Wigren, P Salomonsson, B Haggendahl, P Ljung, M Mattsson and Ingemar Lundström
  SiC based field effect gas sensors for industrial applications
  Physica status solidi. A, Applied research, 2001, 185(1), 15-25.
 Web of Science® Times Cited: 48

Anita Lloyd-Spets, P. Tobias, Lars Unéus, H. Svenningstorp, Lars-Gunnar Ekedahl and Ingemar Lundström
  High temperature catalytic metal field effect transistor for industrial applications
  Sensors and actuators. B, Chemical, 2000, 70(1-3), 67-76.
 Web of Science® Times Cited: 75

H Svenningstorp, Lars Unéus, P Tobias, Ingemar Lundström, Lars-Gunnar Ekedahl and Anita Lloyd-Spets
  High temperature gas sensors based on catalytic metal field effect transistors
  Materials Science Forum, 2000, 338-3, 1435-1438.
 Web of Science® Times Cited: 10

S Savage, H Svenningstorp, Lars Unéus, A Kroutchinine, P Tobias, Lars-Gunnar Ekedahl, Ingemar Lundström, C Harris and Anita Lloyd-Spets
  SiC based gas sensors and their applications
  Materials Science Forum, 2000, 353-3, 747-752.
 Web of Science® Times Cited: 10

Lars Unéus, Peter Tobias, P. Salomonsson, Ingemar Lundström and Anita Lloyd Spetz
  Schottky diodes with thin catalytic gate metals for potential use as ammonia sensors for exhaust gases
  Sensors and materials, 1999, 11(5), 305-318.
 Web of Science® Times Cited: 12

Conference Articles

S Nakagomi, H Shinobu, Lars Unéus, Ingemar Lundström, Lars-Gunnar Ekedahl, Rositsa Yakimova, Mikael Syväjärvi, Anne Henry, Erik Janzén and Anita Lloyd-Spets
  Influence of epitaxial layer on SiC Schottky diode gas sensors operated under high-temperature conditions
  Materials Science Forum, Vols. 389-393, 2002.

 Web of Science® Times Cited: 1

Lars Unéus, S Nakagomi, M Linnarsson, Mona Jensen, BG Svensson, Rositsa Yakimova, Mikael Syväjärvi, Anne Henry, Erik Janzén, Lars-Gunnar Ekedahl, I Lunstrom and Anita Lloyd-Spets
  The effect of hydrogen diffusion in p- and n-type SiC Schottky diodes at high temperatures
  Materials Science Forum, Vols. 389-393, 2002.

 Web of Science® Times Cited: 5


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Last updated: 2017-02-21