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Publications for Jr-Tai Chen


Co-author map based on Web of Sciences articles 2007-

Publications mentioned in social media 2 times*

Journal Articles

Johan Bergsten, Jr-Tai Chen, Sebastian Gustafsson, Anna Malmros, Urban Forsberg, Mattias Thorsell, Erik Janzén and Niklas Rorsman
  Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth Process
  IEEE Transactions on Electron Devices, 2016, 63(1), 333-338.
 Web of Science® Times Cited: 1

Sebastian Gustafsson, Jr-Tai Chen, Johan Bergsten, Urban Forsberg, Mattias Thorsell, Erik Janzén and Niklas Rorsman
  Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer
  IEEE Transactions on Electron Devices, 2015, 62(7), 2162-2169.
 Web of Science® Times Cited: 9

Jr-Tai Chen, Ingemar Persson, Daniel Nilsson, Chih-Wei Hsu, Justinas Palisaitis, Urban Forsberg, Per Persson and Erik Janzén
  Room-Temperature mobility above 2200 cm2/V.s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure
  Applied Physics Letters, 2015, 106(25), .
   Fulltext  PDF  
 Web of Science® Times Cited: 9

Jr-Tai Chen, James W. Pomeroy, Niklas Rorsman, Cha Xia, Chariya Virojanadara, Urban Forsberg, Martin Kuball and Erik Janzén
  Low thermal resistance of a GaN-on-SiC transistor structure with improved structural properties at the interface
  Journal of Crystal Growth, 2015, 428, 54-58.
 Web of Science® Times Cited: 3

Jr-Tai Chen, Chih-Wei Hsu, Urban Forsberg and Erik Janzén
  Metalorganic chemical vapor deposition growth of high-mobility AlGaN/AlN/GaN heterostructures on GaN templates and native GaN substrates
  Journal of Applied Physics, 2015, 117(8), .
 Web of Science® Times Cited: 3

Jr-Tai Chen, Urban Forsberg and Erik Janzén
  Impact of residual carbon on two-dimensional electron gas properties in AlxGa1−xN/GaN heterostructure
  Applied Physics Letters, 2013, 102(19), 193506.
   Fulltext  PDF  
 Web of Science® Times Cited: 38

T. Hofmann, P. Kuehne, S. Schöche, Jr-Tai Chen, Urban Forsberg, Erik Janzén, N. Ben Sedrine, C. M Herzinger, J. A Woollam, M. Schubert and Vanya Darakchieva
  Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures
  Applied Physics Letters, 2012, 101(19), .
 Web of Science® Times Cited: 12

Conference Articles

Nerijus Armakavicius, Jr-Tai Chen, Tino Hofmann, Sean Knight, Philipp Kuhne, Daniel Nilsson, Urban Forsberg, Erik Janzén and Vanya Darakchieva
  Properties of two-dimensional electron gas in AlGaN/GaN HEMT structures determined by cavity-enhanced THz optical Hall effect
  Physica Status Solidi C-Current Topics in Solid State Physics, Vol 13 No 5-6, 2016.


 Web of Science® Times Cited: 1

Ivan Gueorguiev Ivanov, Milan Yazdanfar, Björn Lundqvist, Jr-Tai Chen, Jawad ul-Hassan, Pontus Stenberg, Rickard Liljedahl, Nguyen Tien Son, Joel W. III Ager, Olle Kordina and Erik Janzén
  High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure (SiC)-Si-28-C-12, Natural and C-13 - Enriched 4H-SIC
  Silicon Carbide and Related Materials 2013, PTS 1 AND 2, 2014.


 Web of Science® Times Cited: 5  Fulltext PDF

J Pomeroy, N Rorsman, Jr-Tai Chen, Urban Forsberg, Erik Janzén and M Kuball
  Improved GaN-on-SiC transistor thermal resistance by systematic nucleation layer growth optimization
  Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE, 2013.


Ph.D. Theses

Jr-Tai Chen
  MOCVD growth of GaN-based high electron mobility transistor structures
  2015.


  Fulltext PDF

* Social media data based on publications from 2011 to present and with a DOI; data delivered by Altmetric.com.

 



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Last updated: 2017-02-21