Publications for Jianwu Sun
Co-author map based on ISI articles 2007-


temperature substrates spectra sic samples photoluminescence material lifetimes layers grown fluorescent energy doping carrier boron band 6h-sic 6h-sic 3c-sic 3c-sic

Journal Articles

Valdas Jokubavicius, Jianwu Sun, Xinyu Liu, Gholamreza Yazdi, Ivan Gueorguiev Ivanov, Rositsa Yakimova and Mikael Syväjärvi
  Growth optimization and applicability of thick on-axis SiC layers using sublimation epitaxy in vacuum
  Journal of Crystal Growth, 2016, 448, 51-57.

Mikael Syväjärvi, Quanbao Ma, Valdas Jokubavicius, Augustinas Galeckas, Jianwu Sun, Xinyu Liu, Mattias Jansson, Peter Wellmann, Margareta Linnarsson, Paal Runde, Bertil Andre Johansen, Annett Thogersen, Spyros Diplas, Patricia Almeida Carvalho, Ole Martin Lovvik, Daniel Nilsen Wright, Alexander Yu Azarov and Bengt G. Svensson
  Cubic silicon carbide as a potential photovoltaic material
  Solar Energy Materials and Solar Cells, 2016, 145, 104-108.

Valdas Jokubavicius, Gholam Reza Yazdi, Rickard Liljedahl, Ivan Gueorguiev Ivanov, Jianwu Sun, Xinyu Liu, Schuh Philipp, Martin Wilhelm, Peter Wellmann, Rositsa Yakimova and Mikael Syväjärvi
  Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates
  Crystal Growth & Design, 2015, 15(6), 2940-2947.
   Fulltext  PDF  
 Web of Science® Times Cited: 3

N. Collaert, A. Alian, H. Arimura, G. Boccardi, G. Eneman, J. Franco, Ts. Ivanov, D. Lin, R. Loo, C. Merckling, J. Mitard, M. A. Pourghaderi, R. Rooyackers, S. Sioncke, J. W. Sun, A. Vandooren, A. Veloso, A. Verhulst, N. Waldron, L. Witters, D. Zhou, K. Barla and A. V. -Y Thean
  Ultimate nano-electronics: New materials and device concepts for scaling nano-electronics beyond the Si roadmap
  Microelectronic Engineering, 2015, 132, 218-225.

Haiyan Ou, Yiyu Ou, Aikaterini Argyraki, Saskia Schimmel, Michl Kaiser, Peter Wellmann, Margareta Linnarsson, Valdas Jokubavicius, Jianwu Sun, Rickard Liljedahl and Mikael Syväjärvi
  Advances in wide bandgap SiC for optoelectronics
  European Physical Journal B: Condensed Matter Physics, 2014, 87, 58.
 Web of Science® Times Cited: 5

Saskia Schimmel, Michl Kaiser, Valdas Jokubavicius, Yiyu Ou, Philip Hens, Margareta K. Linnarsson, Jianwu Sun, Rickard Liljedahl, Haiyan Ou, Mikael Syväjärvi and Peter Wellmann
  The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy
  IOP Conference Series: Materials Science and Engineering, 2014, 56(1), 012002.
   Fulltext  PDF  

V. Grivickas, K Gulbinas, Valdas Jokubavicius, Jianwu Sun, M. Karaliunas, Satoshi Kamiyama, Margareta Linnarsson, Michl Kaiser, Peter Wellmann and Mikael Syväjärvi
  Carrier Lifetimes and Influence of In-Grown Defects in N-B Co-Doped 6H-SiC
  IOP Conference Series: Materials Science and Engineering, 2014, 56(1), 012004.

Pawel Kwasnicki, Valdas Jokubavicius, Jianwu Sun, H. Peyre, Rositsa Yakimova, Mikael Syväjärvi, J. Camasse and S. Juillaguet
  Optical investigation of 3C-SiC hetero-epitaxial layers grown by sublimation epitaxy under gas atmosphere
  Materials Science Forum, 2014, 778-780, 243-246.

V. Gavryushin, K Gulbinas, V. Grivickas, M. Karaliunas, M. Stasiūpnas, Valdas Jokubavicius, Jianwu Sun and Mikael Syväjärvi
  Examination of Photoluminescence Temperature Dependencies in N-B Co-doped 6H-SiC
  IOP Conference Series: Materials Science and Engineering, 2014, 56(1), 012003.

Jianwu W. Sun, Volodymyr Khranovskyy, M. Mexis, Martin Eriksson, Mikael Syväjärvi, I. Tsiaoussis, Gholamreza Yazdi, H. Peyre, S. Juillaguet, J. Camassel, Per-Olof Holtz, Peder Bergman, Lars Hultman and Rositsa Yakimova
  Comparative micro-photoluminescence investigation of ZnO hexagonal nanopillars and the seeding layer grown on 4H-SiC
  Journal of Luminescence, 2012, 132(1), 122-127.
 Web of Science® Times Cited: 1

Valdas Jokubavicius, P. Hens, Richard Liljedahl, Jianwu Sun, M. Kaiser, P. Wellmann, S. Sano, Rositza Yakimova, S. Kamiyama and Mikael Syväjärvi
  Effects of source material on epitaxial growth of fluorescent SiC
  Thin Solid Films, 2012, 522, 7-10.
 Web of Science® Times Cited: 2

Jianwu Sun, Valdas Jokubavicius, Rickard Liljedahl, Rositsa Yakimova, S. Juillaguet, J. Camassel, S. Kamiyama and Mikael Syväjärvi
  Room temperature luminescence properties of fluorescent SiC as white light emitting diode medium
  Thin Solid Films, 2012, 522, 33-35.
 Web of Science® Times Cited: 3

Jianwu Sun, Satoshi Kamiyama, Valdas Jokubavicius, H. Peyre, Rositsa Yakimova, S. Juillaguet and Mikael Syväjärvi
  Fluorescent silicon carbide as an ultraviolet-to-visible light converter by control of donor to acceptor recombinations
  Journal of Physics D: Applied Physics, 2012, 45(23), 235107.
   Fulltext  PDF  
 Web of Science® Times Cited: 5

Jianwu Sun, T. Robert, A. Andreadou, A. Mantzari, Valdas Jokubavicius, Rositsa Yakimova, J. Camassel, S. Juillaguet, E. K. Polychroniadis and Mikael Syväjärvi
  Shockley-Frank stacking faults in 6H-SiC
  Journal of Applied Physics, 2012, 111, 113527.
   Fulltext  PDF  
 Web of Science® Times Cited: 3

Jianwu Sun, Ivan Gueorguiev Ivanov, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
  Considerably long carrier lifetimes in high-quality 3C-SiC(111)
  Applied Physics Letters, 2012, 100(25), 252101.
   Fulltext  PDF  
 Web of Science® Times Cited: 13

Mikael Syväjärvi, J. Müller, Jianwu Sun, Vytautas Grivickas, Yiyu Ou, Valdas Jokubavicius, Philip Hens, M. Kaisr, Kanaparin Ariyawong, K. Gulbinas, Rickard Liljedahl, M. K. Linnarsson, S. Kamiyama, P. Wellmann, E. Spiecker and H. Ou
  Fluorescent SiC as a new material for white LEDs
  Physica scripta. T, 2012, T148, 014002.
 Web of Science® Times Cited: 17

Jianwu Sun, Ivan Gueorguiev Ivanov, S. Juillaguet and J. Camassel
  Splitting of type-I (N-B, P-Al) and type-II (N-Al, N-Ga) donor-acceptor pair spectra in 3C-SiC
  Physical Review B, 2011, 83(19-15), .

J. Lorenzzi, G. Zoulis, M. Marinova, O. Kim-Hak, J. W. Sun, N. Jegenyes, H. Peyre, F. Cauwet, P. Chaudouët, M. Soueidan, D. Carole, J. Camassel, E. K. Polychroniadis and G. Ferro
  Incorporation of group III, IV and V elements in 3C–SiC(1 1 1) layers grown by the vapour–liquid–solid mechanism
  Journal of Crystal Growth, 2010, 312(23), 3443-3450.

J. W. Sun, G. Zoulis, J. C. Lorenzzi, N. Jegenyes, H. Peyre, S. Juillaguet, V. Souliere, F. Milesi, G. Ferro and J. Camassel
  Combined effects of Ga, N, and Al codoping in solution grown 3C-€“SiC
  Journal of Applied Physics, 2010, 108(1), 013503-1-013503-10.

Conference Articles

Quanbao Ma, Augustinas Galeckas, Azarov Alexander, Annett Thøgersen, Patricia Carvalho, Daniel N. Wright, Spyros Diplas, Ole M. Løvvik, Valdas Jokubavicius, Xinyu Liu, Jianwu Sun, Mikael Syväjärvi and Bengt G. Svensson
  Boron-implanted 3C-SiC for intermediate band solar cells
  International Conference on Silicon Carbide and Related Materials, 2016.

Jianwu Sun, Valdas Jokubavicius, L. Gao, Ian Don Booker, Mattias Jansson, Xinyu Liu, J.P. Hofmann, E.J.M. Hensen, M. Linnarsson, P. Wellmann, I. Ramiro, A. Marti, Rositsa Yakimova and Mikael Syväjärvi
  Solar driven energy conversion applications based on 3C-SiC
  Materials Science Forum, 2016.

  Fulltext PDF

Jawad Ul-Hassan, H. Bae, Louise Lilja, Ildiko Farkas, I. Kim, Pontus Stenberg, Jianwu Sun, Olle Kordina, Peder Bergman, S. Ha and Erik Janzén
  Fast growth rate epitaxy on 4((degrees)under-bar) off-cut 4-inch diameter 4H-SiC wafers

Roger Loo, Jianwu Sun, Liesbeth Witters, Andriy Hikavyy, Benjamin Vincent, Yosuke Shimura, Paola Favia, Olivier Richard, Hugo Bender, Wilfried Vandervorst, Nadine Collaert and Aaron Thean
  Strained Ge FinFET structures fabricated by selective epitaxial growth
  Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International, 2014.

Jianwu Sun, Satoshi Kamiyama, Peter Wellmann, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
  Microsecond carrier lifetimes in bulk-like 3C-SiC grown by sublimation epitaxy
  Silicon Carbide and Related Materials 2012, 2013.

Saskia Schimmel, Michl Kaiser, Philip Hens, Valdas Jokubavicius, Rickard Liljedahl, Jianwu Sun, Rositsa Yakimova, Yi Yu Ou, Hai Yan Ou, Margareta K. Linnarsson, Peter Wellmann and Mikael Syväjärvi
  Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates
  Silicon Carbide and Related Materials 2012, 2013.

 Web of Science® Times Cited: 1

Jianwu Sun, Satoshi Kamiyama, Rositsa Yakimova and Mikael Syväjärvi
  Effect of surface and interface recombination on carrier lifetime in 6H-SiC layers

Jianwu Sun, T. Robert, Valdas Jokubavicius, S. Juillaguet, Rositza Yakimova, Mikael Syväjärvi and J. Camassel
  Low Temperature Photoluminescence Signature of Stacking Faults in 6H-SiC Epilayers Grown on Low Angle Off-axis Substrates
  ICSCRM2011, 2012.

G. Zoulis, Jianwu Sun, Remigijus Vasiliauskas, J. Lorenzzi, H. Peyre, Mikael Syväjärvi, G. Ferro, S. Juillaguet, Rositza Yakimova and J. Camassel
  Seeding layer influence on the low temperature photoluminescence intensity of 3C-SiC grown on 6H-SiC by sublimation epitaxy
  HETEROSIC and WASMPE 2011, 2012.

 Web of Science® Times Cited: 1

Hervé Peyre, Jianwu Sun, Jude Guelfucci, Sandrine Juillaguet, Jawad Ul-Hassan, Anne Henry, S. Contreras, Pierre Brosselard and Jean Camassel
  Low Temperature Photoluminescence Investigation of 3-Inch SiC Wafers for Power Device Applications
  HeteroSiC & WASMPE 2011, 2012.

Maya Marinova, A. Andreadou, JianWu Sun, J. Lorenzzi, A. Mantzari, Georgios Zoulis, Nikoletta Jegenyes, Sandrine Juillaguet, Veronique Soulière, G. Ferro, Jean Camassel and Efstathios K. Polychroniadis
  Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layers
  Silicon Carbide and Related Materials 2010, 2011.

Maya Marinova, A. Mantzari, Jianwu Sun, J. Lorenzzi, A. Andreadou, G. Zoulis, S. Juillaguet, G. Ferro, J. Camassel and E.K Polychroniadis
  Structural and Optical Investigation of VLS Grown (111) 3C-SiC Layers on 6H-SiC Substrates in Sn-Based Melts
  Silicon Carbide and Related Materials 2010, 2011.

Georgios Zoulis, JianWu Sun, Irina G. Galben-Sandulache, Guoli L. Sun, Sandrine Juillaguet, Thierry Ouisse, Didier Chaussende, Roland Madar and Jean Camassel
  Optical Investigation of Defect Filtering Effects in Bulk 3C-SiC Crystals Grown by the CF-PVT Method Using a Necking Technique
  Silicon Carbide and Related Materials 2010, 2011.

J. W. Sun, G. Zoulis, J. C. Lorenzzi, N. Jegenyes, S. Juillaguet, V. Souliere, G. Ferro and J. Camassel
  Splitting of close N-€Al donor-€acceptor-€pair spectra in 3C-€SiC
  AIP Conference Proceedings. 8–10 October 2010, Strasbourg, (France), 2010.

Georgios Zoulis, Jian Wu Sun, Milena Beshkova, Remigijus Vasiliauskas, S. Juillaguet, H. Peyre, Mikael Syväjärvi, Rositsa Yakimova and J. Camassel
  Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy
  Silicon Carbide and Related Materials 2009, 2010.

 Web of Science® Times Cited: 2

G. Zoulis, J. W. Sun, N. Jegenyes, J. C. Lorenzzi, S. Juillaguet, V. Soulière, G. Ferro and J. Camassel
  Effects of Growth Conditions on the Low Temperature Photoluminescence Spectra of (111) 3C-€SiC Layers Grown by Chemical Vapor Deposition on 3C-€SiC Seeds grown by the Vapor-€Liquid-Solid Technique
  AIP Conference Proceedings.8–10 October 2010, Strasbourg, (France), 2010.