Publications for Jianwu Sun

Publications for Jianwu SunCo-author map based on ISI articles 2007-

Keywords

white temperature sublimation stacking sic recombination quality photoluminescence n luminescence lifetimes lifetime fluorescent faults epitaxy doping carrier 6h-sic 3c-sic (3

Journal Articles

Pawel Kwasnicki, Valdas Jokubavicius, Jianwu Sun, H. Peyre, Rositsa Yakimova, Mikael Syväjärvi, J. Camasse and S. Juillaguet
  Optical investigation of 3C-SiC hetero-epitaxial layers grown by sublimation epitaxy under gas atmosphere
  Materials Science Forum, 2014, 778-780, 243-246.

V. Grivickas, K Gulbinas, Valdas Jokubavicius, Jianwu Sun, M. Karaliunas, Satoshi Kamiyama, Margareta Linnarsson, Michl Kaiser, Peter Wellmann and Mikael Syväjärvi
  Carrier Lifetimes and Influence of In-Grown Defects in N-B Co-Doped 6H-SiC
  IOP Conference Series: Materials Science and Engineering, 2014, 56(1), 012004.

Haiyan Ou, Yiyu Ou, Aikaterini Argyraki, Saskia Schimmel, Michl Kaiser, Peter Wellmann, Margareta Linnarsson, Valdas Jokubavicius, Jianwu Sun, Rickard Liljedahl and Mikael Syväjärvi
  Advances in wide bandgap SiC for optoelectronics
  European Physical Journal B: Condensed Matter Physics, 2014, 87, 58.

V. Gavryushin, K Gulbinas, V. Grivickas, M. Karaliunas, M. Stasiūpnas, Valdas Jokubavicius, Jianwu Sun and Mikael Syväjärvi
  Examination of Photoluminescence Temperature Dependencies in N-B Co-doped 6H-SiC
  IOP Conference Series: Materials Science and Engineering, 2014, 56(1), 012003.

Saskia Schimmel, Michl Kaiser, Valdas Jokubavicius, Yiyu Ou, Philip Hens, Margareta K. Linnarsson, Jianwu Sun, Rickard Liljedahl, Haiyan Ou, Mikael Syväjärvi and Peter Wellmann
  The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy
  IOP Conference Series: Materials Science and Engineering, 2014, 56(1), 012002.
   Fulltext  PDF  

Jianwu Sun, Ivan Gueorguiev Ivanov, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
  Considerably long carrier lifetimes in high-quality 3C-SiC(111)
  Applied Physics Letters, 2012, 100(25), 252101.
   Fulltext  PDF  
 Web of Science® Times Cited: 8

Jianwu Sun, T. Robert, A. Andreadou, A. Mantzari, Valdas Jokubavicius, Rositsa Yakimova, J. Camassel, S. Juillaguet, E. K. Polychroniadis and Mikael Syväjärvi
  Shockley-Frank stacking faults in 6H-SiC
  Journal of Applied Physics, 2012, 111, 113527.
   Fulltext  PDF  
 Web of Science® Times Cited: 2

Jianwu Sun, Satoshi Kamiyama, Valdas Jokubavicius, H. Peyre, Rositsa Yakimova, S. Juillaguet and Mikael Syväjärvi
  Fluorescent silicon carbide as an ultraviolet-to-visible light converter by control of donor to acceptor recombinations
  Journal of Physics D: Applied Physics, 2012, 45(23), 235107.
   Fulltext  PDF  
 Web of Science® Times Cited: 3

Mikael Syväjärvi, J. Müller, Jianwu Sun, Vytautas Grivickas, Yiyu Ou, Valdas Jokubavicius, Philip Hens, M. Kaisr, Kanaparin Ariyawong, K. Gulbinas, Rickard Liljedahl, M. K. Linnarsson, S. Kamiyama, P. Wellmann, E. Spiecker and H. Ou
  Fluorescent SiC as a new material for white LEDs
  Physica scripta. T, 2012, T148, 014002.
 Web of Science® Times Cited: 13

Jianwu Sun, Valdas Jokubavicius, Rickard Liljedahl, Rositsa Yakimova, S. Juillaguet, J. Camassel, S. Kamiyama and Mikael Syväjärvi
  Room temperature luminescence properties of fluorescent SiC as white light emitting diode medium
  Thin Solid Films, 2012, 522, 33-35.
 Web of Science® Times Cited: 2

Valdas Jokubavicius, P. Hens, Richard Liljedahl, Jianwu Sun, M. Kaiser, P. Wellmann, S. Sano, Rositza Yakimova, S. Kamiyama and Mikael Syväjärvi
  Effects of source material on epitaxial growth of fluorescent SiC
  Thin Solid Films, 2012, 522, 7-10.
 Web of Science® Times Cited: 2

Conference Articles

Jawad Hassan, H. Bae, L. Lilja, Ildiko Farkas, I. Kim, Pontus Stenberg, Jianwu Sun, Olle Kordina, Peder Bergman, S. Ha and Erik Janzén
  Fast growth rate epitaxy on 4((degrees)under-bar) off-cut 4-inch diameter 4H-SiC wafers
  SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014.


Saskia Schimmel, Michl Kaiser, Philip Hens, Valdas Jokubavicius, Rickard Liljedahl, Jianwu Sun, Rositsa Yakimova, Yi Yu Ou, Hai Yan Ou, Margareta K. Linnarsson, Peter Wellmann and Mikael Syväjärvi
  Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates
  Silicon Carbide and Related Materials 2012, 2013.


 Web of Science® Times Cited: 1

Jianwu Sun, Satoshi Kamiyama, Peter Wellmann, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
  Microsecond carrier lifetimes in bulk-like 3C-SiC grown by sublimation epitaxy
  Silicon Carbide and Related Materials 2012, 2013.


Jianwu Sun, Satoshi Kamiyama, Rositsa Yakimova and Mikael Syväjärvi
  Effect of surface and interface recombination on carrier lifetime in 6H-SiC layers
  SILICON CARBIDE AND RELATED MATERIALS 2012, 2013.


G. Zoulis, Jianwu Sun, Remigijus Vasiliauskas, J. Lorenzzi, H. Peyre, Mikael Syväjärvi, G. Ferro, S. Juillaguet, Rositza Yakimova and J. Camassel
  Seeding layer influence on the low temperature photoluminescence intensity of 3C-SiC grown on 6H-SiC by sublimation epitaxy
  HETEROSIC and WASMPE 2011, 2012.


 Web of Science® Times Cited: 1

Jianwu Sun, T. Robert, Valdas Jokubavicius, S. Juillaguet, Rositza Yakimova, Mikael Syväjärvi and J. Camassel
  Low Temperature Photoluminescence Signature of Stacking Faults in 6H-SiC Epilayers Grown on Low Angle Off-axis Substrates
  ICSCRM2011, 2012.