Publications for Jawad ul-Hassan
Co-author map based on ISI articles 2007-

Publications mentioned in social media 3 times*

Keywords

temperature substrates stacking sic pin optical on-axis lifetime hot-wall graphene faults epitaxial epilayers epilayer diodes defects cvd carrier bipolar 4h-sic

Journal Articles

S. B. Lisesivdin, G. Atmaca, E. Arslan, S. Cakmakyapan, O. Kazar, S. Butun, Jawad ul-Hassan, Erik Janzén and E. Ozbay
  Extraction and scattering analyses of 2D and bulk carriers in epitaxial graphene-on-SiC structure
 
Altmetric usage: 2

  Physica. E, Low-Dimensional systems and nanostructures, 2014, 63, 87-92.

Ian Don Booker, Jawad Ul Hassan, Louise Lilja, Franziska Beyer, Robin Karhu, J. Peder Bergman, Örjan Danielsson, Olof Kordina, Einar Sveinbjörnsson and Erik Janzén
  Carrier Lifetime Controlling Defects Z(1/2) and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC
 
Altmetric usage: 1

  Crystal Growth & Design, 2014, 14(8), 4104-4110.
   Fulltext  PDF  

Engin Arslan, Semih Cakmakyapan, Ozgur Kazar, Serkan Butun, Sefer Bora Lisesivdin, Neval A. Cinel, Gulay Ertas, Sukru Ardali, Engin Tiras, Jawad ul-Hassan, Erik Janzén and Ekmel Ozbay
  SiC Substrate Effects on Electron Transport in the Epitaxial Graphene Layer
  ELECTRONIC MATERIALS LETTERS, 2014, 10(2), 387-391.

Ivan Gueorguiev Ivanov, Jawad Ul Hassan, Tihomir Iakimov, Alexei A. Zakharov, Rositsa Yakimova and Erik Janzén
  Layer-number determination in graphene on SiC by reflectance mapping
  Carbon, 2014, 77, 492-500.

Louise Lilja, Ian Don Booker, Jawad ul-Hassan, Erik Janzén and Peder Bergman
  The influence of growth conditions on carrier lifetime in 4H-SiC epilayers
  Journal of Crystal Growth, 2013, 381, 43-50.

Leif Johansson, Chao Xia, Jawad ul Hassan, Tihomir Iakimov, Alexei A. Zarharov, Somsakul Watcharinyanon, Rositza Yakimova, Erik Janzén and Chariya Virojanadara
  Is the Registry Between Adjacent Graphene Layers Grown on C-Face SiC Different Compared to That on Si-Face SiC
  Crystals, 2013, 3(1), 1-13.
   Fulltext  PDF  

E Tiras, S Ardali, T Tiras, E Arslan, S Cakmakyapan, O Kazar, Jawad ul Hassan, Erik Janzén and E Ozbay
  Effective mass of electron in monolayer graphene: Electron-phonon interaction
  Journal of Applied Physics, 2013, 113(4), .
   Fulltext  PDF  
 Web of Science® Times Cited: 4

N Thierry-Jebali, Jawad ul-Hassan, M Lazar, D Planson, E Bano, Anne Henry, Erik Janzén and P Brosselard
  Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodes
  Applied Physics Letters, 2012, 101(22), 222111.
 Web of Science® Times Cited: 3

Jawad ul-Hassan, Anne Henry, P. J. McNally and J. Peder Bergman
  Characterization of the Carrot Defect in 4H-SiC Epitaxial Layers
  Journal of Crystal Growth, 2010, 313, 1828-1837.
 Web of Science® Times Cited: 12

P Brosselard, A Perez-Tomas, Jawad ul-Hassan, N Camara, X Jorda, M Vellvehi, P Godignon, J Millan and Peder Bergman
  Low loss, large area 4.5 kV 4H-SiC PIN diodes with reduced forward voltage drift
  SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24(9), 095004.
 Web of Science® Times Cited: 4

Jawad ul-Hassan and J. Peder Bergman
  Influence of Structural Defects on Minority Carrier Lifetime in 4H-SiC Epitaxial Layers: Optical Lifetime Mapping
  Journal of Applied Physics, 2009, 105(12), .
 Web of Science® Times Cited: 19

Jawad ul-Hassan, Anne Henry, Ivan Gueorguiev Ivanov and J. Peder Bergman
  In-grown stacking faults in 4H-SiC epilayer grown on off-cut substrates
  Journal of Applied Physics, 2009, 105(12), 123513.
 Web of Science® Times Cited: 18

Henrik Pedersen, Franziska Beyer, Jawad ul-Hassan, Anne Henry and Erik Janzén
  Donor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD
  Journal of Crystal Growth, 2009, 311(5), 1321-1327.
 Web of Science® Times Cited: 14

A Perez-Tomas, P Brosselard, Jawad ul-Hassan, X Jorda, P Godignon, M Placidi, A Constant, J Millan and Peder Bergman
  Schottky versus bipolar 3.3 kV SiC diodes
  SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23(12), 125004.
 Web of Science® Times Cited: 8

M. Sudow, H.M. Nemati, M. Thorsell, U. Gustavsson, K. Andersson, C. Fager, P.-A. Nilsson, Jawad ul-Hassan, Anne Henry, Erik Janzén, R. Jos and N. Rorsman
  SiC varactors for dynamic load modulation of high power amplifiers
  IEEE Electron Device Letters, 2008, 29(7), 728-730.
 Web of Science® Times Cited: 6

Jawad ul-Hassan, J. Peder Bergman, Anne Henry and Erik Janzén
  On-axis homoepitaxial growth on Si-face 4H–SiC substrates
  Journal of Crystal Growth, 2008, 310(20), 4424-4429.
   Fulltext  PDF  
 Web of Science® Times Cited: 28

Jawad ul-Hassan, J. Peder Bergman, Anne Henry and Erik Janzén
  In-situ surface preparation of nominally on-axis 4H-SiC substrates
  Journal of Crystal Growth, 2008, 310(20), 4430-4437.
   Fulltext  PDF  
 Web of Science® Times Cited: 20

Son Tien Nguyen, Patrick Carlsson, Jawad ul-Hassan, Björn Magnusson and Erik Janzén
  Defects and carrier compensation in semi-insulating 4H-SiC substrates
  Physical Review B Condensed Matter, 2007, 75(15), .
 Web of Science® Times Cited: 34

Son Tien Nguyen, Patrick Carlsson, Jawad ul-Hassan, Erik Janzén, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, N. Morishita, T. Ohshima and H. Itoh
  Divacancy in 4H-SiC
  Physical review letters / publ. by the American Physical Society, 2006, 96, 055501-1.
 Web of Science® Times Cited: 84

Anne Henry, Jawad ul-Hassan, Peder Bergman, Christer Hallin and Erik Janzén
  Thick Silicon Carbide Homoepitaxial Layers Grown by CVD Techniques
  Chemical Vapor Deposition, 2006, 12(8-9), 475-482.
 Web of Science® Times Cited: 52

Rafal Ciechonski, Mikael Syväjärvi, Jawad ul-Hassan and Rositsa Yakimova
  Structural instabilities in growth of SiC crystals
  Journal of Crystal Growth, 2005, 275(1-2), e461-e466.
 Web of Science® Times Cited: 4

Conference Articles

A. Salemi, B. Buono, A. Hallen, Jawad ul-Hassan, Peder Bergman, C.M. Zetterling and M. Östling
  Fabrication and design of 10 kV PiN diodes using on-axis 4H-SiC
  SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014.


M. Winters, E.B. Thorsteinsson, E.O. Sveinbjornsson, H.P. Gislason, Jawad ul-Hassan, Erik Janzén and N. Rorsman
  Carrier mobility as a function of temperature in as-grown and H-intercalated epitaxial graphenes on 4H-SiC
  SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014.


B. Kallinger, M. Rommel, Louise Lilja, Jawad ul-Hassan, Ian Don Booker, Erik Janzén and Peder Bergman
  Comparison of carrier lifetime measurements and mapping in 4H SIC using time resolved photoluminescence and μ-PCD
  SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014.


Louise Lilja, Jawad ul-Hassan, Erik Janzén and Peder Bergman
  Improved Epilayer Surface Morphology on 2 degrees off-cut 4H-SiC Substrates
  SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014.


Ian Don Booker, Hana Abdalla, L. Lilja, Jawad ul-Hassan, Peder Bergman, Einar Sveinbjörnsson and Erik Janzén
  Oxidation induced ON1, ON2a/b defects in 4H-SiC characterized by DLTS
  SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014.


Ivan Gueorguiev Ivanov, Milan Yazdanfar, Björn Lundqvist, Jr-Tai Chen, Jawad ul-Hassan, Pontus Stenberg, Rickard Liljedahl, Nguyen Tien Son, Joel W. III Ager, Olle Kordina and Erik Janzén
  High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure (SiC)-Si-28-C-12, Natural and C-13 - Enriched 4H-SIC
  Silicon Carbide and Related Materials 2013, PTS 1 AND 2, 2014.


  Fulltext PDF

Nicolas Thierry-Jebali, Mihai Lazar, Arthur Vo-Ha, Davy Carole, Veronique Souliere, Farah Laariedh, Jawad ul-Hassan, Anne Henry, Erik Janzen, Dominique Planson, Gabriel Ferro, Christian Brylinski and Pierre Brosselard
  Electrical Characterization of PiN Diodes with p(+) layer Selectively Grown by VLS Transport
  Silicon Carbide and Related Materials 2012, 2013.


 Web of Science® Times Cited: 3

Jawad ul Hassan, Axel Meyer, Semih Cakmakyapan, Ozgur Kazar, Jan Ingo Flege, Jens Falta, Ekmel Ozbay and Erik Janzén
  Surface evolution of 4H-SiC(0001) during in-situ surface preparationand its influence on graphene properties
  Materials Science Forum (Volumes 740 - 742), 2013.


Jawad ul Hassan, Ian Booker, Louise Lilja, Anders Hallén, Martin Fagerlind, Peder Bergman and Erik Janzén
  On-axis homoepitaxial growth of 4H-SiC PiN structure for high power applications
  Materials Science Forum (Volumes 740 - 742), 2013.


Xun Li, Jawad ul Hassan, Olof Kordina, Erik Janzén and Anne Henry
  Surface preparation of 4 degrees off-axis 4H-SIC substrate for epitaxial growth
  Materials Science Forum (Volumes 740 - 742), 2013.


 Web of Science® Times Cited: 1

Michael Winters, Mattias Thorsell, Jawad ul Hassan, N Rorsman, Erik Janzén and H Zirath
  A DC Comparison Study Between H-Intercalated and Native epigrapheneson SiC substrates
  Materials Science Forum (Volumes 740 - 742), 2013.


 Web of Science® Times Cited: 2

Louise Lilja, Jawad ul-Hassan, Ian Booker, Peder Bergman and Erik Janzén
  Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers
  9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), 2-6 September 2012, St Petersburg, Russia, 2013.


 Web of Science® Times Cited: 1  Fulltext PDF

Louise Lilja, Jawad ul-Hassan, Ian D. Booker, Peder Bergman and Erik Janzén
  The Effect of Growth Conditions on Carrier Lifetime in n-type 4H-SiC Epitaxial Layers
  Materials Science Forum Vol 717 - 720, 2012.


 Web of Science® Times Cited: 3

Gabriel Civrac, Farah Laariedh, Nicolas Thierry-jebali, Mihai Lazar, Dominique Planson, Pierre Brosselard, Jawad ul Hassan, Anne Henry, Erik Janzén, Bertrand Vergne and Sigo Scharnholz
  600 V PiN diodes fabricated using on-axis 4H silicon carbide
  Materials Science Forum Vol 717 - 720, 2012.


 Web of Science® Times Cited: 2

Jawad Hassan, Louise Lilja, Ian Don Booker, Peder Bergman and Erik Janzén
  Influence of Growth Mechanism on Carrier Lifetime in on-axis Homoepitaxial Layers of 4H-SiC
  Materials Science Forum Vols 717 - 720, 2012.


 Web of Science® Times Cited: 1

Ian Don Booker, Jawad Hassan, Anders Hallén,, Einar Ö. Sveinbjörnsson, Olle Kordina and Peder Bergman
  Comparison of Post-Growth Carrier Lifetime Improvement Methods for 4H-SiC Epilayers
  Materials Science Forum Vols 717 - 720, 2012.


 Web of Science® Times Cited: 1

Peder Bergman, Ian Don Booker, Louise Lilja, Jawad Hassan and Erik Janzén
  Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation
  Materials Science Forum Vols 717 - 720, 2012.


Ian Don Booker, Jawad Hassan, Erik Janzén and Peder Bergman
  High-Resolution Time-Resolved Carrier Lifetime and Photoluminescence Mapping of 4H-SiC Epilayers
  Materials Science Forum Vols 717 - 720, 2012.


Jawad ul-Hassan, Chariya Virojanadara, A. Meyer, Ivan Gueorguiev Ivanov, J. I. Flege, Somsakul Watcharinyanon, J Falta, Leif I. Johansson and Erik Janzén
  Control of epitaxial graphene thickness on 4H-SiC(0001) and bufferlayer removal through hydrogen intercalation
  Materials Science Forum (Volumes 717 - 720), 2012.


 Web of Science® Times Cited: 1

Jawad ul-Hassan, Peder Bergman, Anne Henry and Erik Janzén
  High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC
  Materials Science Forum (Volumes 679 - 680), p115-118, 2011.


 Web of Science® Times Cited: 1

Jawad Hassan, Patrik Scajev, Kestutis Jarasiunas and Peder Bergman
  Optically Detected Temperature Dependences of Carrier Lifetime and Diffusion Coefficient in 4H- and 3C-SiC
  Materials Science Forum (Volumes 679 - 680), 2011.


 Web of Science® Times Cited: 1

Jawad ul-Hassan and Peder Bergman
  Single Shockley Stacking Faults in as-grown 4H-SiC Epilayers
  Materials Science Forum, Vols. 645-648, 2010.


 Web of Science® Times Cited: 1

Jawad ul-Hassan, Anne Henry and Peder Bergman
  Optical and Structural Properties of In-grown Stacking Faults in 4H-SiC Epilayers
  ICSCRM2009, 2010.


 Web of Science® Times Cited: 2

Jawad ul-Hassan, Peder Bergman, Justinas Palisaitis, Anne Henry, P.J. McNally, S. Anderson and Erik Janzén
  Growth and properties of SiC on-axis homoepitaxial layers
  ICSCRM 2009, 2010.


 Web of Science® Times Cited: 4

Jawad ul-Hassan and Peder Bergman
  Influence of Structural defects on Carrier Lifetime in 4H Epitaxial Layers, Studied by High Resolution Optical Lifetime Mapping
  ECSCRM2008,2008, 2009.


 Web of Science® Times Cited: 1

P. Brosselard, N. Camara, Jawad ul-Hassan, X. Jordà, Peder Bergman, J. Montserrat and J. Millán
  3.3 kV-10A 4H-SiC PiN diodes
  Materials Science Forum, Vols. 600-603, 2009.


 Web of Science® Times Cited: 5

Ivan Gueorguiev Ivanov, Jawad ul-Hassan, Anne Henry and Erik Janzén
  Temperature Dependence and Selective Excitation of the Phosphorus Related Photoluminescence in 4H-SiC
  Materials Science Forum, Vols. 615-617, 2009.


Jawad ul-Hassan, Peder Bergman, Anne Henry, P. Brosselard, P. Godignon and Erik Janzén
  On-axis Homoepitaxy on Full 2- 4H-SiC Wafer for High Power Applications
  Materials Science Forum Vols. 615-617, 2009.


 Web of Science® Times Cited: 2

P. Brosselard, A.P. Tomas, N. Camara, Jawad ul-Hassan, X. Jorda, M. Vellvehi, P. Godignon, J. Millan and Peder Bergman
  The effect of the temperature on the bipolar degradation of 3.3 kV 4H-SiC PiN diodes
  20th International Symposium on Power Semiconductor Devices ICs,2008, 2008.


Peder Bergman, Jawad ul-Hassan, Anne Henry, P. Godignon, P. Brosselard and Erik Janzén
  Improved SiC Epitaxial Material for Bipolar Applications
  Proc. of MRS Spring Meeting 2008, 2008.


P Brosselard, M Berthou, Jawad Hassan, X Jorda, Peder Bergman, J Montserrat, P Godignon and J Millan
  Comparison between 3.3kV 4H-SiC schottky and bipolar diodes
  IET Seminar Digest, Volume 2008, Issue 2, 2008, 2008.


Y. Shishkin, S.P. Rao, O. Kordina, I. Agafonov, A.A. Maltsev, Jawad ul-Hassan, Anne Henry, C. Moisson and S.E. Saddow
  CVD of 6H-SiC on Non-Basal Quasi Polar Faces
  ECSCRM 2006,2006, 2007.


Henrik Pedersen, Anne Henry, Jawad ul-Hassan, Peder Bergman and Erik Janzén
  Growth and Photoluminescence study of Aluminium doped SiC epitaxial layers
  Materials Science Forum, Vols. 556-557, 2007.


 Web of Science® Times Cited: 1

Jawad ul-Hassan, Peder Bergman, Anne Henry, Henrik Pedersen, P. J. McNally and Erik Janzén
  4H-SiC Epitaxial Layers Grown on on-axis Si-face Substrate
  Materials Science Forum, Vols. 556-557, 2007.


 Web of Science® Times Cited: 8

Anne Henry, Jawad ul-Hassan, Henrik Pedersen, Franziska Beyer, Peder Bergman, Sven Andersson, Erik Janzén and P. Godignon
  Thick epilayers for power devices
  Materials Science Forum, vol. 556-557, 2007.


 Web of Science® Times Cited: 8

Jawad ul-Hassan, Christer Hallin, J. Peder Bergman and Erik Janzén
  Properties of Thick n- and p-type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on off- and on-axis Substrates
  Materials Science Forum, Vols. 527-529, 2006.


Jawad ul-Hassan, Anne Henry, Peder Bergman and Erik Janzén
  Epitaxial growth of thin 4H-SiC layers with uniform doping depth profile
  Thin Solid Films, Vol. 515, 2006.


 Web of Science® Times Cited: 4

Erik Janzén, Peder Bergman, Örjan Danielsson, Urban Forsberg, Christer Hallin, Jawad ul-Hassan, Anne Henry, Ivan Gueorguiev Ivanov, Anelia Kakanakova-Gueorguie, Per Persson and Qamar Ul Wahab
  SiC and III-nitride Growth in a Hot-wall CVD Reactor
  Materials Science Forum, ISSN 0255-5476, volume 483-485, 2005.


 Web of Science® Times Cited: 6

Ph.D. Theses

Jawad ul Hassan
  Epitaxial Growth and Characterization of SiC for High Power Devices
  2009.


  Fulltext PDF

* Social media data based on publications from 2011 to present and with a DOI; data delivered by Altmetric.com.