Publications for Jawad ul-Hassan
Co-author map based on ISI articles 2007-

Keywords

temperature substrates stacking sic pin optical on-axis lifetime hot-wall graphene faults epitaxial epilayers epilayer diodes defects cvd carrier bipolar 4h-sic

Journal Articles

Engin Arslan, Semih Cakmakyapan, Ozgur Kazar, Serkan Butun, Sefer Bora Lisesivdin, Neval A. Cinel, Gulay Ertas, Sukru Ardali, Engin Tiras, Jawad ul-Hassan, Erik Janzén and Ekmel Ozbay
  SiC Substrate Effects on Electron Transport in the Epitaxial Graphene Layer
  ELECTRONIC MATERIALS LETTERS, 2014, 10(2), 387-391.

Louise Lilja, Ian Don Booker, Jawad ul-Hassan, Erik Janzén and Peder Bergman
  The influence of growth conditions on carrier lifetime in 4H-SiC epilayers
  Journal of Crystal Growth, 2013, 381, 43-50.

Leif Johansson, Chao Xia, Jawad ul Hassan, Tihomir Iakimov, Alexei A. Zarharov, Somsakul Watcharinyanon, Rositza Yakimova, Erik Janzén and Chariya Virojanadara
  Is the Registry Between Adjacent Graphene Layers Grown on C-Face SiC Different Compared to That on Si-Face SiC
  Crystals, 2013, 3(1), 1-13.
   Fulltext  PDF  

E Tiras, S Ardali, T Tiras, E Arslan, S Cakmakyapan, O Kazar, Jawad ul Hassan, Erik Janzén and E Ozbay
  Effective mass of electron in monolayer graphene: Electron-phonon interaction
  Journal of Applied Physics, 2013, 113(4), .
   Fulltext  PDF  
 Web of Science® Times Cited: 3

Louise Lilja, Jawad ul-Hassan, Ian Booker, Peder Bergman and Erik Janzén
  Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers
  Materials Science Forum, 2013, 740-742, 637-640.
   Fulltext  PDF  
 Web of Science® Times Cited: 1

N Thierry-Jebali, Jawad ul-Hassan, M Lazar, D Planson, E Bano, Anne Henry, Erik Janzén and P Brosselard
  Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodes
  Applied Physics Letters, 2012, 101(22), 222111.
 Web of Science® Times Cited: 2

Jawad ul-Hassan, Anne Henry, P. J. McNally and J. Peder Bergman
  Characterization of the Carrot Defect in 4H-SiC Epitaxial Layers
  Journal of Crystal Growth, 2010, 313, 1828-1837.
 Web of Science® Times Cited: 12

P Brosselard, A Perez-Tomas, Jawad ul-Hassan, N Camara, X Jorda, M Vellvehi, P Godignon, J Millan and Peder Bergman
  Low loss, large area 4.5 kV 4H-SiC PIN diodes with reduced forward voltage drift
  SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24(9), 095004.
 Web of Science® Times Cited: 4

Jawad ul-Hassan and J Peder Bergman
  Influence of structural defects on carrier lifetime in 4H-SiC epitaxial layers: Optical lifetime mapping
  JOURNAL OF APPLIED PHYSICS, 2009, 105(12), .
 Web of Science® Times Cited: 17

Jawad ul-Hassan and J. Peder Bergman
  Influence of Structural Defects on Minority Carrier Lifetime in 4H-SiC Epitaxial Layers: Optical Lifetime Mapping
  Journal of Applied Physics, 2009, , .
 Web of Science® Times Cited: 17

Jawad ul-Hassan, Anne Henry, Ivan Gueorguiev Ivanov and J. Peder Bergman
  In-grown stacking faults in 4H-SiC epilayer grown on off-cut substrates
  Journal of Applied Physics, 2009, 105(12), 123513.
 Web of Science® Times Cited: 17

Henrik Pedersen, Franziska Beyer, Jawad ul-Hassan, Anne Henry and Erik Janzén
  Donor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD
  Journal of Crystal Growth, 2009, 311(5), 1321-1327.
 Web of Science® Times Cited: 12

M. Sudow, H.M. Nemati, M. Thorsell, U. Gustavsson, K. Andersson, C. Fager, P.-A. Nilsson, Jawad ul-Hassan, Anne Henry, Erik Janzén, R. Jos and N. Rorsman
  SiC varactors for dynamic load modulation of high power amplifiers
  IEEE Electron Device Letters, 2008, 29(7), 728-730.
 Web of Science® Times Cited: 6

A Perez-Tomas, P Brosselard, Jawad ul-Hassan, X Jorda, P Godignon, M Placidi, A Constant, J Millan and Peder Bergman
  Schottky versus bipolar 3.3 kV SiC diodes
  SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23(12), 125004.
 Web of Science® Times Cited: 8

Jawad ul-Hassan, J. Peder Bergman, Anne Henry and Erik Janzén
  On-axis homoepitaxial growth on Si-face 4H–SiC substrates
  Journal of Crystal Growth, 2008, 310(20), 4424-4429.
   Fulltext  PDF  
 Web of Science® Times Cited: 27

Jawad ul-Hassan, J. Peder Bergman, Anne Henry and Erik Janzén
  In-situ surface preparation of nominally on-axis 4H-SiC substrates
  Journal of Crystal Growth, 2008, 310(20), 4430-4437.
   Fulltext  PDF  
 Web of Science® Times Cited: 20

Son Tien Nguyen, Patrick Carlsson, Jawad ul-Hassan, Björn Magnusson and Erik Janzén
  Defects and carrier compensation in semi-insulating 4H-SiC substrates
  Physical Review B Condensed Matter, 2007, 75(15), .
 Web of Science® Times Cited: 34

Son Tien Nguyen, Patrick Carlsson, Jawad ul-Hassan, Erik Janzén, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, N. Morishita, T. Ohshima and H. Itoh
  Divacancy in 4H-SiC
  Physical review letters / publ. by the American Physical Society, 2006, 96, 055501-1.
 Web of Science® Times Cited: 83

Anne Henry, Jawad ul-Hassan, Peder Bergman, Christer Hallin and Erik Janzén
  Thick Silicon Carbide Homoepitaxial Layers Grown by CVD Techniques
  Chemical Vapor Deposition, 2006, 12(8-9), 475-482.
 Web of Science® Times Cited: 50

Rafal Ciechonski, Mikael Syväjärvi, Jawad ul-Hassan and Rositsa Yakimova
  Structural instabilities in growth of SiC crystals
  Journal of Crystal Growth, 2005, 275(1-2), e461-e466.
 Web of Science® Times Cited: 4

Conference Articles

Ian Don Booker, Hana Abdalla, L. Lilja, Jawad ul-Hassan, Peder Bergman, Einar Sveinbjörnsson and Erik Janzén
  Oxidation induced ON1, ON2a/b defects in 4H-SiC characterized by DLTS
  SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014.


Louise Lilja, Jawad ul-Hassan, Erik Janzén and Peder Bergman
  Improved Epilayer Surface Morphology on 2 degrees off-cut 4H-SiC Substrates
  SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014.


Ivan Gueorguiev Ivanov, Milan Yazdanfar, Björn Lundqvist, Jr-Tai Chen, Jawad ul-Hassan, Pontus Stenberg, Rickard Liljedahl, Nguyen Tien Son, Joel W. III Ager, Olle Kordina and Erik Janzén
  High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure (SiC)-Si-28-C-12, Natural and C-13 - Enriched 4H-SIC
  Silicon Carbide and Related Materials 2013, PTS 1 AND 2, 2014.


Nicolas Thierry-Jebali, Mihai Lazar, Arthur Vo-Ha, Davy Carole, Veronique Souliere, Farah Laariedh, Jawad ul-Hassan, Anne Henry, Erik Janzen, Dominique Planson, Gabriel Ferro, Christian Brylinski and Pierre Brosselard
  Electrical Characterization of PiN Diodes with p(+) layer Selectively Grown by VLS Transport
  Silicon Carbide and Related Materials 2012, 2013.


 Web of Science® Times Cited: 3

Jawad ul Hassan, Axel Meyer, Semih Cakmakyapan, Ozgur Kazar, Jan Ingo Flege, Jens Falta, Ekmel Ozbay and Erik Janzén
  Surface evolution of 4H-SiC(0001) during in-situ surface preparationand its influence on graphene properties
  Materials Science Forum (Volumes 740 - 742), 2013.


Jawad ul Hassan, Ian Booker, Louise Lilja, Anders Hallén, Martin Fagerlind, Peder Bergman and Erik Janzén
  On-axis homoepitaxial growth of 4H-SiC PiN structure for high power applications
  Materials Science Forum (Volumes 740 - 742), 2013.


Xun Li, Jawad ul Hassan, Olof Kordina, Erik Janzén and Anne Henry
  Surface preparation of 4 degrees off-axis 4H-SIC substrate for epitaxial growth
  Materials Science Forum (Volumes 740 - 742), 2013.


 Web of Science® Times Cited: 1

Michael Winters, Mattias Thorsell, Jawad ul Hassan, N Rorsman, Erik Janzén and H Zirath
  A DC Comparison Study Between H-Intercalated and Native epigrapheneson SiC substrates
  Materials Science Forum (Volumes 740 - 742), 2013.


 Web of Science® Times Cited: 2

Louise Lilja, Jawad ul-Hassan, Ian D. Booker, Peder Bergman and Erik Janzén
  The Effect of Growth Conditions on Carrier Lifetime in n-type 4H-SiC Epitaxial Layers
  Materials Science Forum Vol 717 - 720, 2012.


 Web of Science® Times Cited: 3

Gabriel Civrac, Farah Laariedh, Nicolas Thierry-jebali, Mihai Lazar, Dominique Planson, Pierre Brosselard, Jawad ul Hassan, Anne Henry, Erik Janzén, Bertrand Vergne and Sigo Scharnholz
  600 V PiN diodes fabricated using on-axis 4H silicon carbide
  Materials Science Forum Vol 717 - 720, 2012.


 Web of Science® Times Cited: 2

Jawad Hassan, Louise Lilja, Ian Don Booker, Peder Bergman and Erik Janzén
  Influence of Growth Mechanism on Carrier Lifetime in on-axis Homoepitaxial Layers of 4H-SiC
  Materials Science Forum Vols 717 - 720, 2012.


 Web of Science® Times Cited: 1

Ian Don Booker, Jawad Hassan, Anders Hallén,, Einar Ö. Sveinbjörnsson, Olle Kordina and Peder Bergman
  Comparison of Post-Growth Carrier Lifetime Improvement Methods for 4H-SiC Epilayers
  Materials Science Forum Vols 717 - 720, 2012.


 Web of Science® Times Cited: 1

Peder Bergman, Ian Don Booker, Louise Lilja, Jawad Hassan and Erik Janzén
  Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation
  Materials Science Forum Vols 717 - 720, 2012.


Ian Don Booker, Jawad Hassan, Erik Janzén and Peder Bergman
  High-Resolution Time-Resolved Carrier Lifetime and Photoluminescence Mapping of 4H-SiC Epilayers
  Materials Science Forum Vols 717 - 720, 2012.


Jawad ul-Hassan, Chariya Virojanadara, A. Meyer, Ivan Gueorguiev Ivanov, J. I. Flege, Somsakul Watcharinyanon, J Falta, Leif I. Johansson and Erik Janzén
  Control of epitaxial graphene thickness on 4H-SiC(0001) and bufferlayer removal through hydrogen intercalation
  Materials Science Forum (Volumes 717 - 720), 2012.


Jawad Hassan, Patrik Scajev, Kestutis Jarasiunas and Peder Bergman
  Optically Detected Temperature Dependences of Carrier Lifetime and Diffusion Coefficient in 4H- and 3C-SiC
  Materials Science Forum (Volumes 679 - 680), 2011.


 Web of Science® Times Cited: 1

Jawad ul-Hassan, Peder Bergman, Anne Henry and Erik Janzén
  High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC
  Materials Science Forum (Volumes 679 - 680), p115-118, 2011.


 Web of Science® Times Cited: 1

Jawad ul-Hassan, Peder Bergman, Justinas Palisaitis, Anne Henry, P.J. McNally, S. Anderson and Erik Janzén
  Growth and properties of SiC on-axis homoepitaxial layers
  ICSCRM 2009, 2010.


 Web of Science® Times Cited: 4

Jawad ul-Hassan, Anne Henry and Peder Bergman
  Optical and Structural Properties of In-grown Stacking Faults in 4H-SiC Epilayers
  ICSCRM2009, 2010.


 Web of Science® Times Cited: 1

Jawad ul-Hassan and Peder Bergman
  Single Shockley Stacking Faults in as-grown 4H-SiC Epilayers
  Materials Science Forum, Vols. 645-648, 2010.


 Web of Science® Times Cited: 1

Jawad ul-Hassan, Peder Bergman, Anne Henry, P. Brosselard, P. Godignon and Erik Janzén
  On-axis Homoepitaxy on Full 2- 4H-SiC Wafer for High Power Applications
  Materials Science Forum Vols. 615-617, 2009.


 Web of Science® Times Cited: 2

Jawad ul-Hassan and Peder Bergman
  Influence of Structural defects on Carrier Lifetime in 4H Epitaxial Layers, Studied by High Resolution Optical Lifetime Mapping
  ECSCRM2008,2008, 2009.


 Web of Science® Times Cited: 1

Ivan Gueorguiev Ivanov, Jawad ul-Hassan, Anne Henry and Erik Janzén
  Temperature Dependence and Selective Excitation of the Phosphorus Related Photoluminescence in 4H-SiC
  Materials Science Forum, Vols. 615-617, 2009.


P. Brosselard, N. Camara, Jawad ul-Hassan, X. Jordà, Peder Bergman, J. Montserrat and J. Millán
  3.3 kV-10A 4H-SiC PiN diodes
  Materials Science Forum, Vols. 600-603, 2009.


 Web of Science® Times Cited: 5

P. Brosselard, A.P. Tomas, N. Camara, Jawad ul-Hassan, X. Jorda, M. Vellvehi, P. Godignon, J. Millan and Peder Bergman
  The effect of the temperature on the bipolar degradation of 3.3 kV 4H-SiC PiN diodes
  20th International Symposium on Power Semiconductor Devices ICs,2008, 2008.


P Brosselard, M Berthou, Jawad Hassan, X Jorda, Peder Bergman, J Montserrat, P Godignon and J Millan
  Comparison between 3.3kV 4H-SiC schottky and bipolar diodes
  IET Seminar Digest, Volume 2008, Issue 2, 2008, 2008.


Peder Bergman, Jawad ul-Hassan, Anne Henry, P. Godignon, P. Brosselard and Erik Janzén
  Improved SiC Epitaxial Material for Bipolar Applications
  Proc. of MRS Spring Meeting 2008, 2008.


Y. Shishkin, S.P. Rao, O. Kordina, I. Agafonov, A.A. Maltsev, Jawad ul-Hassan, Anne Henry, C. Moisson and S.E. Saddow
  CVD of 6H-SiC on Non-Basal Quasi Polar Faces
  ECSCRM 2006,2006, 2007.


Henrik Pedersen, Anne Henry, Jawad ul-Hassan, Peder Bergman and Erik Janzén
  Growth and Photoluminescence study of Aluminium doped SiC epitaxial layers
  Materials Science Forum, Vols. 556-557, 2007.


 Web of Science® Times Cited: 1

Anne Henry, Jawad ul-Hassan, Henrik Pedersen, Franziska Beyer, Peder Bergman, Sven Andersson, Erik Janzén and P. Godignon
  Thick epilayers for power devices
  Materials Science Forum, vol. 556-557, 2007.


 Web of Science® Times Cited: 8

Jawad ul-Hassan, Peder Bergman, Anne Henry, Henrik Pedersen, P. J. McNally and Erik Janzén
  4H-SiC Epitaxial Layers Grown on on-axis Si-face Substrate
  Materials Science Forum, Vols. 556-557, 2007.


 Web of Science® Times Cited: 8

Jawad ul-Hassan, Anne Henry, Peder Bergman and Erik Janzén
  Epitaxial growth of thin 4H-SiC layers with uniform doping depth profile
  Thin Solid Films, Vol. 515, 2006.


 Web of Science® Times Cited: 4

Jawad ul-Hassan, Christer Hallin, J. Peder Bergman and Erik Janzén
  Properties of Thick n- and p-type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on off- and on-axis Substrates
  Materials Science Forum, Vols. 527-529, 2006.


Erik Janzén, Peder Bergman, Örjan Danielsson, Urban Forsberg, Christer Hallin, Jawad ul-Hassan, Anne Henry, Ivan Gueorguiev Ivanov, Anelia Kakanakova-Gueorguie, Per Persson and Qamar Ul Wahab
  SiC and III-nitride Growth in a Hot-wall CVD Reactor
  Materials Science Forum, ISSN 0255-5476, volume 483-485, 2005.


 Web of Science® Times Cited: 6

Ph.D. Theses

Jawad ul Hassan
  Epitaxial Growth and Characterization of SiC for High Power Devices
  2009.


  Fulltext PDF