Publication List for for Jawad ul-Hassan

Publications for Jawad ul-Hassan
Co-author map based on ISI articles 2007-

Journal Articles

E Tiras, S Ardali, T Tiras, E Arslan, S Cakmakyapan, O Kazar, Jawad ul Hassan, Erik Janzén and E Ozbay
Effective mass of electron in monolayer graphene: Electron-phonon interaction
Journal of Applied Physics, 2013, 113(4), .

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Leif Johansson, Chao Xia, Jawad ul Hassan, Tihomir Iakimov, Alexei A. Zarharov, Somsakul Watcharinyanon, Rositza Yakimova, Erik Janzén and Chariya Virojanadara
Is the Registry Between Adjacent Graphene Layers Grown on C-Face SiC Different Compared to That on Si-Face SiC
Crystals, 2013, 3(1), 1-13.

N Thierry-Jebali, Jawad ul-Hassan, M Lazar, D Planson, E Bano, Anne Henry, Erik Janzén and P Brosselard
Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodes
Applied Physics Letters, 2012, 101(22), 222111.

Jawad ul-Hassan, Anne Henry, P. J. McNally and J. Peder Bergman
Characterization of the Carrot Defect in 4H-SiC Epitaxial Layers
Journal of Crystal Growth, 2010, 313, 1828-1837.

Web of Science® Times Cited: 7

P Brosselard, A Perez-Tomas, Jawad ul-Hassan, N Camara, X Jorda, M Vellvehi, P Godignon, J Millan and Peder Bergman
Low loss, large area 4.5 kV 4H-SiC PIN diodes with reduced forward voltage drift
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24(9), 095004.

Web of Science® Times Cited: 1

Jawad ul-Hassan and J Peder Bergman
Influence of structural defects on carrier lifetime in 4H-SiC epitaxial layers: Optical lifetime mapping
JOURNAL OF APPLIED PHYSICS, 2009, 105(12), .

Web of Science® Times Cited: 14

Jawad ul-Hassan and J. Peder Bergman
Influence of Structural Defects on Minority Carrier Lifetime in 4H-SiC Epitaxial Layers: Optical Lifetime Mapping
Journal of Applied Physics, 2009, , .

Web of Science® Times Cited: 14

Jawad ul-Hassan, Anne Henry, Ivan Gueorguiev Ivanov and J. Peder Bergman
In-grown stacking faults in 4H-SiC epilayer grown on off-cut substrates
Journal of Applied Physics, 2009, 105(12), 123513.

Web of Science® Times Cited: 14

Henrik Pedersen, Franziska Beyer, Jawad ul-Hassan, Anne Henry and Erik Janzén
Donor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD
Journal of Crystal Growth, 2009, 311(5), 1321-1327.

Web of Science® Times Cited: 9

M. Sudow, H.M. Nemati, M. Thorsell, U. Gustavsson, K. Andersson, C. Fager, P.-A. Nilsson, Jawad ul-Hassan, Anne Henry, Erik Janzén, R. Jos and N. Rorsman
SiC varactors for dynamic load modulation of high power amplifiers
IEEE Electron Device Letters, 2008, 29(7), 728-730.

Jawad ul-Hassan, J. Peder Bergman, Anne Henry and Erik Janzén
On-axis homoepitaxial growth on Si-face 4H–SiC substrates
Journal of Crystal Growth, 2008, 310(20), 4424-4429.

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Jawad ul-Hassan, J. Peder Bergman, Anne Henry and Erik Janzén
In-situ surface preparation of nominally on-axis 4H-SiC substrates
Journal of Crystal Growth, 2008, 310(20), 4430-4437.

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A Perez-Tomas, P Brosselard, Jawad ul-Hassan, X Jorda, P Godignon, M Placidi, A Constant, J Millan and Peder Bergman
Schottky versus bipolar 3.3 kV SiC diodes
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23(12), 125004.

Son Tien Nguyen, Patrick Carlsson, Jawad ul-Hassan, Björn Magnusson and Erik Janzén
Defects and carrier compensation in semi-insulating 4H-SiC substrates
Physical Review B Condensed Matter, 2007, 75(15), .

Web of Science® Times Cited: 28

Son Tien Nguyen, Patrick Carlsson, Jawad ul-Hassan, Erik Janzén, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, N. Morishita, T. Ohshima and H. Itoh
Divacancy in 4H-SiC
Physical review letters / publ. by the American Physical Society, 2006, 96, 055501-1.

Web of Science® Times Cited: 57

Anne Henry, Jawad ul-Hassan, Peder Bergman, Christer Hallin and Erik Janzén
Thick Silicon Carbide Homoepitaxial Layers Grown by CVD Techniques
Chemical Vapor Deposition, 2006, 12(8-9), 475-482.

Web of Science® Times Cited: 44

Rafal Ciechonski, Mikael Syväjärvi, Jawad ul-Hassan and Rositsa Yakimova
Structural instabilities in growth of SiC crystals
Journal of Crystal Growth, 2005, 275(1-2), e461-e466.

Web of Science® Times Cited: 4

Conference Articles

Louise Lilja, Jawad ul-Hassan, Ian Booker, Peder Bergman and Erik Janzén
Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers
Materials Science Forum Vol 740 - 742, 2013.

Michael Winters, Mattias Thorsell, Jawad ul Hassan, N Rorsman, Erik Janzén and H Zirath
A DC Comparison Study Between H-Intercalated and Native epigrapheneson SiC substrates
Materials Science Forum (Volumes 740 - 742), 2013.

Xun Li, Jawad ul Hassan, Olof Kordina, Erik Janzén and Anne Henry
Surface preparation of 4° off-axis 4H-SiC substrate for epitaxial growth
Materials Science Forum (Volumes 740 - 742), 2013.

Jawad ul Hassan, Ian Booker, Louise Lilja, Anders Hallén, Martin Fagerlind, Peder Bergman and Erik Janzén
On-axis homoepitaxial growth of 4H-SiC PiN structure for high powerapplications
Materials Science Forum (Volumes 740 - 742), 2013.

Jawad ul Hassan, Axel Meyer, Semih Cakmakyapan, Ozgur Kazar, Jan Ingo Flege, Jens Falta, Ekmel Ozbay and Erik Janzén
Surface evolution of 4H-SiC(0001) during in-situ surface preparationand its influence on graphene properties
Materials Science Forum (Volumes 740 - 742), 2013.

Louise Lilja, Jawad ul-Hassan, Ian D. Booker, Peder Bergman and Erik Janzén
The Effect of Growth Conditions on Carrier Lifetime in n-type 4H-SiC Epitaxial Layers
Materials Science Forum Vol 717 - 720, 2012.

Gabriel Civrac, Farah Laariedh, Nicolas Thierry-jebali, Mihai Lazar, Dominique Planson, Pierre Brosselard, Jawad ul Hassan, Anne Henry, Erik Janzén, Bertrand Vergne and Sigo Scharnholz
600 V PiN diodes fabricated using on-axis 4H silicon carbide
Materials Science Forum Vol 717 - 720, 2012.

Web of Science® Times Cited: 1

Jawad Hassan, Louise Lilja, Ian Don Booker, Peder Bergman and Erik Janzén
Influence of Growth Mechanism on Carrier Lifetime in on-axis Homoepitaxial Layers of 4H-SiC
Materials Science Forum Vols 717 - 720, 2012.

Ian Don Booker, Jawad Hassan, Anders Hallén,, Einar Ö. Sveinbjörnsson, Olle Kordina and Peder Bergman
Comparison of Post-Growth Carrier Lifetime Improvement Methods for 4H-SiC Epilayers
Materials Science Forum Vols 717 - 720, 2012.

Web of Science® Times Cited: 1

Peder Bergman, Ian Don Booker, Louise Lilja, Jawad Hassan and Erik Janzén
Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation
Materials Science Forum Vols 717 - 720, 2012.

Ian Don Booker, Jawad Hassan, Erik Janzén and Peder Bergman
High-Resolution Time-Resolved Carrier Lifetime and Photoluminescence Mapping of 4H-SiC Epilayers
Materials Science Forum Vols 717 - 720, 2012.

Jawad ul-Hassan, Chariya Virojanadara, A. Meyer, Ivan Gueorguiev Ivanov, J. I. Flege, Somsakul Watcharinyanon, J Falta, Leif I. Johansson and Erik Janzén
Control of epitaxial graphene thickness on 4H-SiC(0001) and bufferlayer removal through hydrogen intercalation
Materials Science Forum (Volumes 717 - 720), 2012.

Jawad ul-Hassan, Peder Bergman, Anne Henry and Erik Janzén
High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC
Materials Science Forum (Volumes 679 - 680), p115-118, 2011.

Jawad Hassan, Patrik Scajev, Kestutis Jarasiunas and Peder Bergman
Optically Detected Temperature Dependences of Carrier Lifetime and Diffusion Coefficient in 4H- and 3C-SiC
Materials Science Forum (Volumes 679 - 680), 2011.

Jawad ul-Hassan, Peder Bergman, Justinas Palisaitis, Anne Henry, P.J. McNally, S. Anderson and Erik Janzén
Growth and properties of SiC on-axis homoepitaxial layers
ICSCRM 2009, 2010.

Web of Science® Times Cited: 3

Jawad ul-Hassan, Anne Henry and Peder Bergman
Optical and Structural Properties of In-grown Stacking Faults in 4H-SiC Epilayers
ICSCRM2009, 2010.

Jawad ul-Hassan and Peder Bergman
Single Shockley Stacking Faults in as-grown 4H-SiC Epilayers
Materials Science Forum, Vols. 645-648, 2010.

Jawad ul-Hassan, Peder Bergman, Anne Henry, P. Brosselard, P. Godignon and Erik Janzén
On-axis Homoepitaxy on Full 2- 4H-SiC Wafer for High Power Applications
Materials Science Forum Vols. 615-617, 2009.

Web of Science® Times Cited: 2

Jawad ul-Hassan and Peder Bergman
Influence of Structural defects on Carrier Lifetime in 4H Epitaxial Layers, Studied by High Resolution Optical Lifetime Mapping
ECSCRM2008,2008, 2009.

Web of Science® Times Cited: 1

Ivan Gueorguiev Ivanov, Jawad ul-Hassan, Anne Henry and Erik Janzén
Temperature Dependence and Selective Excitation of the Phosphorus Related Photoluminescence in 4H-SiC
Materials Science Forum, Vols. 615-617, 2009.

P. Brosselard, N. Camara, Jawad ul-Hassan, X. Jordà, Peder Bergman, J. Montserrat and J. Millán
3.3 kV-10A 4H-SiC PiN diodes
Materials Science Forum, Vols. 600-603, 2009.

Web of Science® Times Cited: 4

P. Brosselard, A.P. Tomas, N. Camara, Jawad ul-Hassan, X. Jorda, M. Vellvehi, P. Godignon, J. Millan and Peder Bergman
The effect of the temperature on the bipolar degradation of 3.3 kV 4H-SiC PiN diodes
20th International Symposium on Power Semiconductor Devices ICs,2008, 2008.

Peder Bergman, Jawad ul-Hassan, Anne Henry, P. Godignon, P. Brosselard and Erik Janzén
Improved SiC Epitaxial Material for Bipolar Applications
Proc. of MRS Spring Meeting 2008, 2008.

P Brosselard, M Berthou, Jawad Hassan, X Jorda, Peder Bergman, J Montserrat, P Godignon and J Millan
Comparison between 3.3kV 4H-SiC schottky and bipolar diodes
IET Seminar Digest, Volume 2008, Issue 2, 2008, 2008.

Y. Shishkin, S.P. Rao, O. Kordina, I. Agafonov, A.A. Maltsev, Jawad ul-Hassan, Anne Henry, C. Moisson and S.E. Saddow
CVD of 6H-SiC on Non-Basal Quasi Polar Faces
ECSCRM 2006,2006, 2007.

Henrik Pedersen, Anne Henry, Jawad ul-Hassan, Peder Bergman and Erik Janzén
Growth and Photoluminescence study of Aluminium doped SiC epitaxial layers
Materials Science Forum, Vols. 556-557, 2007.

Web of Science® Times Cited: 1

Anne Henry, Jawad ul-Hassan, Henrik Pedersen, Franziska Beyer, Peder Bergman, Sven Andersson, Erik Janzén and P. Godignon
Thick epilayers for power devices
Materials Science Forum, vol. 556-557, 2007.

Web of Science® Times Cited: 7

Jawad ul-Hassan, Peder Bergman, Anne Henry, Henrik Pedersen, P. J. McNally and Erik Janzén
4H-SiC Epitaxial Layers Grown on on-axis Si-face Substrate
Materials Science Forum, Vols. 556-557, 2007.

Web of Science® Times Cited: 8

Jawad ul-Hassan, Anne Henry, Peder Bergman and Erik Janzén
Epitaxial growth of thin 4H-SiC layers with uniform doping depth profile
Thin Solid Films, Vol. 515, 2006.

Web of Science® Times Cited: 3

Jawad ul-Hassan, Peder Bergman, Christer Hallin and Erik Janzén
Properties of Thick n- and p-Type Epitaxial Layers Grown by Hot-Wall CVD on Off- and On-Axis Substrates
Mater. Sci. Forum, Vol. 527-529, 2006.

Jawad ul-Hassan, Christer Hallin, J. Peder Bergman and Erik Janzén
Properties of Thick n- and p-type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on off- and on-axis Substrates
Materials Science Forum, Vols. 527-529, 2006.