Publications for Ivan Gueorguiev Ivanov
Co-author map based on ISI articles 2007-
Journal Articles
Jan Eric Stehr, Xingjun Wang, Stanislav Filippov, S J. Pearton, Ivan Gueorguiev Ivanov, Weimin Chen and Irina Buyanova
Defects in N, O and N, Zn implanted ZnO bulk crystals
Journal of Applied Physics, 2013, 113(10), 103509.
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Jianwu Sun, Ivan Gueorguiev Ivanov, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
Considerably long carrier lifetimes in high-quality 3C-SiC(111)
Applied Physics Letters, 2012, 100(25), 252101.
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Andreas Gällström, Björn Magnusson, Franziska Beyer, Adam Gali, Nguyen Son Tien, Stefano Leone, Ivan Gueorguiev Ivanov, Carl Hemmingsson, Anne Henry and Erik Janzén
Optical identification and electronic configuration of tungsten in 4H-and 6H-SiC
Physica. B, Condensed matter, 2012, 407(10), 1462-1466.
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L.L. Yang, Qingxiang Zhao, G.Z. Xing, D.D. Wang, T. Wu, Magnus Willander, Ivan Gueorguiev Ivanov and J.H. Yang
A SIMS study on Mg diffusion in Zn(0.94)Mg(0.06)O/ZnO heterostructures grown by metal organic chemical vapor deposition
Applied Surface Science, 2011, 257(20), 8629-8633.
Web of Science® Times Cited: 3 |
J W Sun, Ivan Gueorguiev Ivanov, S Juillaguet and J Camassel
Splitting of type-I (N-B, P-Al) and type-II (N-Al, N-Ga) donor-acceptor pair spectra in 3C-SiC
PHYSICAL REVIEW B, 2011, 83(19), 195201.
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Susann Schmidt, Grzegorz Greczynski, Cecilia Goyenola, Gueorgui Kostov Gueorguiev, Zs Czigany, Jens Jensen, Ivan Gueorguiev Ivanov and Lars Hultman
CF(x) thin solid films deposited by high power impulse magnetron sputtering: Synthesis and characterization
Surface & Coatings Technology, 2011, 206(4), 646-653.
Fulltext Web of Science® Times Cited: 1 |
Nguyen Tien Son, J. Isoya, T Umeda, Ivan Gueorguiev Ivanov, Anne Henry, T. Ohshima and Erik Janzén
EPR and ENDOR Studies of Shallow Donors in SiC
Applied Magnetic Resonance, 2010, 39(1-2), 49-85.
Web of Science® Times Cited: 2 |
Ivan Gueorguiev Ivanov, Anne Henry, Fei Yan, W J Choyke and Erik Janzén
Ionization energy of the phosphorus donor in 3C-SiC from the donor-acceptor pair emission
JOURNAL OF APPLIED PHYSICS, 2010, 108(6), 063532.
Fulltext Web of Science® Times Cited: 4 |
Li-Li Yang, Qingxiang Zhao, Magnus Willander, J H Yang and Ivan Gueorguiev Ivanov
Annealing effects on optical properties of low temperature grown ZnO nanorod arrays
Journal of Applied Physics, 2009, 105(5), 053503.
Fulltext Web of Science® Times Cited: 39 |
Jawad ul-Hassan, Anne Henry, Ivan Gueorguiev Ivanov and J. Peder Bergman
In-grown stacking faults in 4H-SiC epilayer grown on off-cut substrates
Journal of Applied Physics, 2009, 105(12), 123513.
Web of Science® Times Cited: 14 |
Son Tien Nguyen, Ivan Gueorguiev Ivanov, A. Kuznetsov, B.G. Svensson, Qing Xiang Zhao, Magnus Willander, N. Morishita, T. Ohshima, H. Itoh, J. Isoya, Erik Janzén and Rositsa Yakimova
Recombination centers in as-grown and electron-irradiated ZnO substrates
Journal of Applied Physics, 2007, 102(9), .
Web of Science® Times Cited: 9 |
Daniela Gogova, E. Talik, Ivan Gueorguiev Ivanov and Bo Monemar
Large-area free-standing GaN substrate grown by hydride vapor phase epitaxy on epitaxial lateral overgrown GaN template
Physica. B, Condensed matter, 2006, 371(1), 133-139.
Web of Science® Times Cited: 7 |
Rositsa Yakimova, Gholam Reza Yazdi, Son Tien Nguyen, Ivan Gueorguiev Ivanov, Mikael Syväjärvi, S. Sun, G. Tompa, A. Kuznetsov and B. Svensson
Optical and Morphological Features of Bulk and Homoepitaxial ZnO
Superlattices and Microstructures, 2006, 39, 247-256.
Web of Science® Times Cited: 10 |
Ivan Gueorguiev Ivanov, A. Stelmach, M. Kleverman and Erik Janzén
Effective-mass approximation for shallow donors in uniaxial indirect band-gap crystals and application to 4H-SiC
, 2006, , .
Web of Science® Times Cited: 4 |
S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, Anne Henry, Ivan Gueorguiev Ivanov, Peder Bergman, Bo Monemar, S. Chichibu and T. Onuma
Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC
Journal of Applied Physics, 2006, 99(9), .
Web of Science® Times Cited: 25 |
Ivan Gueorguiev Ivanov, Anne Henry and Erik Janzén
Ionization energies of phosphorus and nitrogen donors and aluminum acceptors in 4H silicon carbide from the donor-acceptor pair emission
Physical Review B. Condensed Matter and Materials Physics, 2005, 71(24), 241201-241201-4.
Web of Science® Times Cited: 15 |
JF Falth, MN Gurusinghe, XY Liu, TG Andersson, Ivan Gueorguiev Ivanov, Bo Monemar, HH Yao and SC Wang
Influence of dislocation density on photoluminescence intensity of GaN
Journal of Crystal Growth, 2005, 278(01-Apr), 406-410.
Web of Science® Times Cited: 5 |
Bo Monemar, Henrik Larsson, Carl Hemmingsson, Ivan Gueorguiev Ivanov and Daniela Gogova
Growth of thick GaN layers with hydride vapour phase epitaxy
Journal of Crystal Growth, 2005, 281(1), 17-31.
Web of Science® Times Cited: 33 |
A. Kasic, D. Gogova, Henrik Larsson, Ivan Gueorguiev Ivanov, Jens Birch, Bo Monemar, M. Fehrer and V. Härle
Highly homogeneous bulk-like 2'' GaN grown by HVPE on MOCVD-GaN template
Journal of Crystal Growth, 2005, 275, e387-e393.
Web of Science® Times Cited: 4 |
Bo Monemar, Tanja Paskova, Carl Hemmingsson, Henrik Larsson, Plamen Paskov, Ivan Gueorguiev Ivanov and Aleksander Kasic
Growth of thick GaN layers by hydride vapor phase epitaxy
Journal of Ceramic Processing Research, 2005, 6(2), 153-162.
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Daniela Gogova, Henrik Larsson, A. Kasic, Gholam Reza Yazdi, Ivan Gueorguiev Ivanov, Rositsa Yakimova, Bo Monemar, E. Aujol, E. Frayssinet, J-P. Faurie, B. Beaumont and P. Gibart
High-Quality 2'' Bulk-Like Free-Standing GaN Grown by HydrideVapour Phase Epitaxy on a Si-doped Metal Organic Vapour Phase Epitaxial GaN Template with an Ultra Low Dislocation Density
Japanese Journal of Applied Physics, 2005, 44, 1181-1185.
Web of Science® Times Cited: 12 |
A. Kasic, Daniela Gogova, Henrik Larsson, Carl Hemmingsson, Ivan Gueorguiev Ivanov, Rositsa Yakimova, Bo Monemar and M. Heuken
Characterization of crack-free relaxed GaN grown on 2″ sapphire
Journal of Applied Physics, 2005, 98(7), 73525.
Web of Science® Times Cited: 4 |
Tanja Paskova, Vanya Darakchieva, E Valcheva, Plamen Paskov, Ivan Gueorguiev Ivanov, Bo Monemar, T Bottcher, C Roder and D Hommel
Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications: Strain distribution and wafer bending
Journal of Electronic Materials, 2004, 33(5), 389-394.
Web of Science® Times Cited: 15 |
Daniela Gogova, A. Kasic, Henrik Larsson, B. Pécz, Rositsa Yakimova, Ivan Gueorguiev Ivanov and Bo Monemar
Characterization of high-quality free-standing GaN grown by HVPE
Physica Scripta, 2004, T114, 18-21.
Web of Science® Times Cited: 2 |
A. Kasic, Daniela Gogova, Henrik Larsson, Carl Hemmingsson, Ivan Gueorguiev Ivanov, Bo Monemar, C. Bundesmann and M. Schubert
Micro-Raman scattering profiling studies on HVPE-grown free-standing GaN
Physica status solidi. A, Applied research, 2004, 201(12), 2773-2776.
Web of Science® Times Cited: 5 |
Irina Buyanova, Morteza Izadifard, Ivan Gueorguiev Ivanov, Jens Birch, Weimin Chen, M. Felici, A. Polimeni, M. Capizzi, Y. G. Hong, H. P. Xin and C. W. Tu
Direct experimental evidence for unusual effects of hydrogen on the electronic and vibrational properties of GaNxP1−x alloys: a proof for a general property of dilute nitrides
Physical Review B Condensed Matter, 2004, 70(24), 245215-245219.
Web of Science® Times Cited: 13 |
Adam Gali, P Deak, E Rauls, Tien Son Nguyen, Ivan Gueorguiev Ivanov, Fredrik Carlsson, Erik Janzén and WJ Choyke
Correlation between the antisite pair and the D-I center in SiC
Physical Review B. Condensed Matter and Materials Physics, 2003, 67(15), .
Web of Science® Times Cited: 48 |
Ivan Gueorguiev Ivanov, Björn Magnusson and Erik Janzén
Optical selection rules for shallow donors in 4H-SiC and ionization energy of the nitrogen donor at the hexagonal site
Physical Review B. Condensed Matter and Materials Physics, 2003, 67(16), .
Web of Science® Times Cited: 13 |
Ivan Gueorguiev Ivanov, Björn Magnusson and Erik Janzén
Analysis of the sharp donor-acceptor pair luminescence in 4H-SiC doped with nitrogen and aluminum
Physical Review B. Condensed Matter and Materials Physics, 2003, 67(16), .
Web of Science® Times Cited: 12 |
Daniela Gogova, Henrik Larsson, Rositsa Yakimova, Z. Zolnai, Ivan Gueorguiev Ivanov and Bo Monemar
Fast growth of high quality GaN
Physica status solidi. A, Applied research, 2003, 200(1), 13-17.
Web of Science® Times Cited: 16 |
Xiangjun Wang, S Olafsson, LD Madsen, S Rudner, Ivan Gueorguiev Ivanov, A Grishin and Ulf Helmersson
Growth and characterization of Na0.5K0.5NbO3 thin films on polycrystalline Pt80Ir20 substrates
Journal of Materials Research, 2002, 17(5), 1183-1191.
Web of Science® Times Cited: 16 |
T. Egilsson, Ivan Gueorguiev Ivanov, Anne Henry and Erik Janzén
Excitation spectra of nitrogen bound excitons in 4H- and 6H-SiC
Journal of Applied Physics, 2002, 91(3), 2028-2032.
Web of Science® Times Cited: 6 |
Matthias Wagner, Ivan Gueorguiev Ivanov, Liutauras Storasta, Peder Bergman, Björn Magnusson, Weimin Chen and Erik Janzén
Photoluminescence upconversion in 4H-SiC
Applied Physics Letters, 2002, 81(14), 2547.
Web of Science® Times Cited: 1 |
Irina Buyanova, Ivan Gueorguiev Ivanov, Bo Monemar, Weimin Chen, A. A. Toropov, Ya. V. Terentev, S. V. Sorokin, A. V. Lebedev, S. V. Ivanov and P. S. Kopev
Tunable laser spectroscopy of spin injection in ZnMnSe/ZnCdSe quantum structures
Applied Physics Letters, 2002, 81(12), 2196.
Web of Science® Times Cited: 29 |
Ivan Gueorguiev Ivanov, T Egilsson, Anne Henry, Bo Monemar and Erik Janzén
Resonant sharp hot free-exciton luminescence in 6H-and 4H-SiC due to inhibited exciton-phonon interaction
Physical Review B. Condensed Matter and Materials Physics, 2001, 64(8), .
Web of Science® Times Cited: 3 |
M Tzolov, N Tzenov, D Dimova-Malinovska, M Kalitzova, C Pizzuto, G Vitali, G Zollo and Ivan Gueorguiev Ivanov
Modification of the structure of ZnO : Al films by control of the plasma parameters
Thin Solid Films, 2001, 396(1-2), 274-279.
Web of Science® Times Cited: 17 |
V. Donchev, N. Shtinkov, K. Germanova, Ivan Gueorguiev Ivanov, H. Brachkov and Tzv. Ivanov
Photoluminescene line-shape analysis in quantum wells embedded in superlattices
Materials science & engineering. C, biomimetic materials, sensors and systems, 2001, 15(1-2), 75-77.
Web of Science® Times Cited: 3 |
V. Donchev, K. Germanova, N. Shtinkov, Ivan Gueorguiev Ivanov and S. Vlaev
Photoluminescence study of AlAs/GaAs superlattices containing enlarged wells
Thin Solid Films, 2000, 364(1), 224-227.
Web of Science® Times Cited: 3 |
V. Donchev, Tzv. Ivanov, Ivan Gueorguiev Ivanov, M. Angelov and K. Germanova
High-temperature excitons in GaAs quantum wells embedded in AlAs/GaAs superlattices
Vacuum, 2000, 58(2), 478-484.
Web of Science® Times Cited: 6 |
N. Shtinkov, V. Donchev, K. Germanova, S. Vlaev and Ivan Gueorguiev Ivanov
Effect of non-abrupt interfaces in AlAs/GaAs superlattices with embedded GaAs quantum wells
Vacuum, 2000, 58(2), 561-567.
Web of Science® Times Cited: 3 |
T. Egilsson, Anne Henry, Ivan Gueorguiev Ivanov, A. Ellison and Erik Janzén
Excitation properties of hydrogen-related photoluminescence in 6H-SiC
Physical Review B. Condensed Matter and Materials Physics, 2000, 62(11), 7162-7168.
Web of Science® Times Cited: 7 |
M. Tzolov, N. Tzenov, D. Dimova-Malinovska, M. Kalitzova, C. Pizzuto, G. Vitali, G. Zollo and Ivan Gueorguiev Ivanov
Vibrational properties and structure of undoped and Al-doped ZnO films deposited by RF magnetron sputtering
Thin Solid Films, 2000, 379(1-2), 28-36.
Web of Science® Times Cited: 117 |
T Egilsson, Ivan Gueorguiev Ivanov, Anne Henry and Erik Janzén
Zeeman spectroscopy of the D-1 bound exciton in 3C-, and 4H-SiC
Physica. B, Condensed matter, 1999, 274, 677-680.
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Olle Kordina, Christer Hallin, Anne Henry, Peder Bergman, Ivan Gueorguiev Ivanov, A. Ellison, Nguyen Tien Son and Erik Janzén
Growth of SiC by "Hot-Wall" CVD and HTCVD
Physica status solidi. B, Basic research, 1997, 202(1), 321-334.
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Chapters in Books
Erik Janzén, Adam Gali, Anne Henry, Ivan Gueorguiev Ivanov, Björn Magnusson and Son Tien Nguyen
Defects in SiC
Defects in Microelectronic Materials and Devices, Taylor and Francis LLC, 2008, 770.
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T Egilsson, Ivan Gueorguiev Ivanov, Nguyen Tien Son, Anne Henry, Peder Bergman and Erik Janzén
Exciton and defect photoluminescence from SiC
Silicon Carbide, , 2003, 81-120.
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Conference Articles
Andreas Gällström, Björn Magnusson, Franziska Beyer, Adam Gali, Nguyen Tien Son, Stefano Leone, Ivan G. Ivanov, Anne Henry, Carl Hemmingsson and Erik Janzén
Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC
Materials Science Forum Vols 717 - 720, 2012.
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Andreas Gällström, Ivan Gueorguiev Ivanov, R. Coble, R. P. Devaty, W. J. Choyke and Erik Janzén
Investigation of intrinsic carbon-related defects in 4H-SiC by selective-excitation photoluminescence spectroscopy
Materials Science Forum Vols 717 - 720, 2012.
Web of Science® Times Cited: 1
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Jawad ul-Hassan, Chariya Virojanadara, A. Meyer, Ivan Gueorguiev Ivanov, J. I. Flege, Somsakul Watcharinyanon, J Falta, Leif I. Johansson and Erik Janzén
Control of epitaxial graphene thickness on 4H-SiC(0001) and bufferlayer removal through hydrogen intercalation
Materials Science Forum (Volumes 717 - 720), 2012.
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Ivan Ivanov, Anne Henry, Fei Yan, Wolfgang J. Choyke and Erik Janzén
Donor-Acceptor Pair Luminescence of P-Al and N-Al Pairs in 3C-SiC and the Ionization Energy of the P Donor
<em>Materials Science Forum Vols. 679-680 (2011) pp 245-248</em>, 2011.
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Anne Henry, Anders Lundskog, Justinas Palisaitis, Ivan Ivanov, Anelia Kakanakova-Georgieva, Urban Forsberg, Per Persson and Erik Janzén
AlGaN Multiple Quantum Wells and AlN Grown in a Hot-wall MOCVD for Deep UV Applications
ECS Transactions, Vol. 25, Iss. 8, 2009.
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Ivan Gueorguiev Ivanov, Jawad ul-Hassan, Anne Henry and Erik Janzén
Temperature Dependence and Selective Excitation of the Phosphorus Related Photoluminescence in 4H-SiC
Materials Science Forum, Vols. 615-617, 2009.
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Ivan Gueorguiev Ivanov, C. Persson, Anne Henry and Erik Janzén
Wave-Function Symmetry and the Properties of Shallow P Donors in 4H SiC
Materials Science Forum, Vols. 600-603, 2009.
Web of Science® Times Cited: 2
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Son Tien Nguyen, Ivan Gueorguiev Ivanov, A. Kuznetsov, B.G. Svensson, Q.X. Zhao, Magnus Willander, M.N. Morishita, T. Ohshirma, H. Itoh, Erik Janzén and Rositsa Yakimova
Common point defects in as-grown ZnO substrates studied by optical detection of magnetic resonance
Journal of Crystal Growth, Vol. 310, 2008.
Web of Science® Times Cited: 1
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Tatiana Choubina, M.M. Glazov, A.A. Toropov, Ivan Gueorguiev Ivanov, N.A. Gippius, A. Vasson, J. Leymaire, A. Kavokin, A. Usui, Peder Bergman, Galia Pozina and Bo Monemar
Realization of slow light in GaN crystals
IWN 2008,2008, 2008.
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Tatiana Choubina, M.M. Glazov, A.A. Toropov, N.A. Gippius, Peder Bergman, Bo Monemar, A. Usui, A. Vasson, J. Leymarie, Ivan Gueorguiev Ivanov and P.S. Kopev
Slow light in GaN
16th Int. Symp. ¿Nanostructures: Physics and Technology,2008, 2008.
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Galia Pozina, Carl Hemmingsson, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Ivan Gueorguiev Ivanov, Bo Monemar, Lars Hultman and Erik Janzén
Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4- SiC substrate
8th International Conference on Physics of Light-Matter Coupling in Nanostructures,2008, 2008.
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Anders Lundskog, Urban Forsberg, Anelia Kakanakova-Georgieva, Rafal Ciechonski, Ivan Gueorguiev Ivanov, Vanya Darakchieva, Erik Janzén, M. Fagerlind, J-Y. Shiu and N. Rorsman
Highly Uniform Hot-Wall MOCVD Growth of High-Quality AlGaN/GaN HEMT-Structures on 100 mm Semi-Insulating 4H-SiC Substrates
ICNS-7,2007, 2007.
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Anelia Kakanakova-Georgieva, Urban Forsberg, Ivan Gueorguiev Ivanov and Erik Janzén
Uniform hot-wall MOCVD epitaxial growth of 2 inch AlGaN/GaN HEMT structures
Journal of Crystal Growth, Vol. 300, 2007.
Web of Science® Times Cited: 14
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Son Tien Nguyen, Ivan Gueorguiev Ivanov, A. Yu. Kuznetsov, B.G. Svensson, Qing Xiang Zhao, Magnus Willander, M.N. Morishita, T. Ohshima, H. Itoh, J. Isoya, Erik Janzén and Rositsa Yakimova
Magnetic resonance studies of defects in electron-irradiated ZnO substrates
Physca B, Vol. 401-402, 2007.
Web of Science® Times Cited: 2
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Ivan Gueorguiev Ivanov and Erik Janzén
Theory of the Stark Effect on the Donor Levels in 4H Silicon Carbide
Materials Science Forum, vol. 556-557, 2007.
Web of Science® Times Cited: 1
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Urban Forsberg, Anelia Kakanakova-Georgieva, Ivan Gueorguiev Ivanov and Erik Janzén
Hot-wall MOCVD growth and characterization of III-nitrides for HEMT application
WOCSDICE 2006,2006, 2006.
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Anelia Kakanakova-Georgieva, Urban Forsberg, Ivan Gueorguiev Ivanov and Erik Janzén
Hot-wall MOCVD developments towards 2 inch AlGaN/GaN epitaxial growth
ICMOVPE2006,2006, 2006.
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Ivan Gueorguiev Ivanov, Anne Henry and Erik Janzén
Donor-acceptor Pair Luminescence of Phosphorus-Aluminum and Nitrogen-Aluminum Pairs in 4H SiC
Materials Science forum, Vols. 527-529, 2006.
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Ivan Gueorguiev Ivanov, A Stelmach, M Kleverman and Erik Janzén
Effective-mass theory of shallow donors in 4H-SIC
Materials Science Forum(ISSN 0255-5476), Vols. 483-485, 2005.
Web of Science® Times Cited: 4
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Anelia Kakanakova-Georgieva, Ivan Gueorguiev Ivanov, Christer Hallin and Erik Janzén
Hot-wall MOCVD grown homoepitaxial GaN layers with intense intrinsic excitonic structure
Phys. Stat. Sol. (a), Vol. 202, 2005.
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Irina Buyanova, Morteza Izadifard, Ivan Gueorguiev Ivanov, Jens Birch, Wei Min Chen, M. Felici, A. Polimeni, M. Capizzi, Y.G. Hong, H.P. Xin and C.W. Tu
Unusual effects of hydrogen in GaNP alloys: A general property of dilute nitrides
2005 MRS Spring Meeting,2005, 2005.
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Daniela Gogova, S. Kanev, Bo Monemar, Ivan Gueorguiev Ivanov, Rositsa Yakimova and E. Talik
Growth and characterization of free-standing HVPE GaN on two-step epitaxial lateral overgrown GaN template
, 2005.
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Erik Janzén, Peder Bergman, Örjan Danielsson, Urban Forsberg, Christer Hallin, Jawad ul-Hassan, Anne Henry, Ivan Gueorguiev Ivanov, Anelia Kakanakova-Gueorguie, Per Persson and Qamar Ul Wahab
SiC and III-nitride Growth in a Hot-wall CVD Reactor
Materials Science Forum, ISSN 0255-5476, volume 483-485, 2005.
Web of Science® Times Cited: 5
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Irina Buyanova, Morteza Izadifard, Ivan Gueorguiev Ivanov, Jens Birch, Weimin Chen, A. Polimeni, M. Capizzi, Y. G. Hong and C. W. Tu
Effects of hydrogen on electronic and crystalline structure of GaNP
EMRS-2004 Spring Meeting,2004, 2004.
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Christer Hallin, Qamar Ul Wahab, Ivan Gueorguiev Ivanov, Peder Bergman and Erik Janzén
Homoepitaxial On-Axis Growth of 4H- and 6H-SiC by CVD
Materials Science Forum, Vols. 457-460, 2004.
Web of Science® Times Cited: 13
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Ivan Gueorguiev Ivanov and Erik Janzén
Photoluminescence Excitation Spectroscopy on the Donor-Acceptor Pair Luminescence in 4H and 6H SiC
Mater. Sci. Forum, Vol. 457-460, 2004.
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L. Kassamakova-Kolaklieva, Liutauras Storasta, Ivan Gueorguiev Ivanov, Björn Magnusson, S. Contreras, C. Consejo, J. Pernot, M. Zielinski and Erik Janzén
Temperature-Dependent Hall Effect Measurements in Low - Compensated p-Type 4H-SiC
Mater. Sci. Forum, Vol. 457-460, 2004.
Web of Science® Times Cited: 4
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Adam Gali, P. Deák, E. Rauls, Son Tien Nguyen, Ivan Gueorguiev Ivanov, Fredrik Carlsson, Erik Janzén and W.J. Choyke
Antisites as possible origin of irradiation induced photoluminescence centers in SiC: A theoretical study on clusters of antisites and carbon interstitials in 4H-SiC
Mater. Sci. Forum, Vol. 457-460, 2004.
Web of Science® Times Cited: 1
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Anelia Kakanakova-Georgieva, Christer Hallin, Ivan Gueorguiev Ivanov and Erik Janzén
AlGaN/GaN epitaxial growth on SiC in a hot-wall MOCVD system
European Microwave Week,2004, 2004.
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Erik Janzén, Ivan Gueorguiev Ivanov, Son Tien Nguyen, Björn Magnusson, Anne Henry and J. Isoya
Defects in SiC
International Seminar on SiC and Related Materials,2004, 2004.
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Ivan Gueorguiev Ivanov, A Ellison and Erik Janzén
Donor-acceptor pair luminescence in 4H-SiC doped with nitrogen and aluminum
Materials Science Forum, Vols. 433-436, 2003.
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Matthias Wagner, Ivan Gueorguiev Ivanov, Liutauras Storasta, JP Bergman, Björn Magnusson, Weimin Chen and Erik Janzén
Photoluminescence up-conversion processes in SiC
Materials Science Forum, Vols. 433-436, 2003.
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Adam Gali, P. Deak, E. Rauls, Tien Son Nguyen, Ivan Gueorguiev Ivanov, Fredrik Carlsson, Erik Janzén and W.J. Choyke
Anti-site pair in SiC: A model of the DI center
Physica B, 2003.
Web of Science® Times Cited: 7
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Erik Janzén, Ivan Gueorguiev Ivanov, Son Tien Nguyen, Björn Magnusson, Z Zolnai, Anne Henry, Peder Bergman, Liutauras Storasta and Fredrik Carlsson
Defects in SiC
Physica B: Condensed Matter, Vols. 340-342, 2003.
Web of Science® Times Cited: 14
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Ivan Gueorguiev Ivanov, J Zhang, Liutauras Storasta and Erik Janzén
Photoconductivity of lightly-doped and semi-insulating 4H-SiC and the free exciton binding energy
Materials Science Forum, Vols. 389-393, 2002.
Web of Science® Times Cited: 1
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Ivan Gueorguiev Ivanov, T Egilsson, J Zhang, A Ellison and Erik Janzén
Intrinsic photoconductivity of 6H-SiC and the free-exciton binding energy
Materials Science Forum, Vols. 353-356, 2001.
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Anne Henry, T Egilsson, Ivan Gueorguiev Ivanov and Erik Janzén
Metastability of a hydrogen-related defect in 6H-SiC
Materials Science Forum, Vols. 338-342, 2000.
Web of Science® Times Cited: 6
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T Egilsson, Ivan Gueorguiev Ivanov, Anne Henry and Erik Janzén
Pseudo-donors in SiC
Materials Science Forum, Vols. 338-342, 2000.
Web of Science® Times Cited: 2
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Ph.D., Lic. Theses
