Publications for Ivan Gueorguiev Ivanov
Co-author map based on ISI articles 2007-

Publications mentioned in social media 2 times*

Keywords

thick temperature spectroscopy spectra sic recombination photoluminescence pair nitrogen model ionization gan excitons exciton epitaxial energy donor defects bound 4h-sic

Journal Articles

Milan Yazdanfar, Henrik Pedersen, Pitsiri Sukkaew, Ivan Gueorguiev Ivanov, Örjan Danielsson, Olle Kordina and Erik Janzén
  On the use of methane as a carbon precursor in Chemical Vapor Deposition of silicon carbide
 
Altmetric usage: 1

  Journal of Crystal Growth, 2014, 390, 24-29.
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 Web of Science® Times Cited: 1

Ivan Gueorguiev Ivanov, Jawad Ul Hassan, Tihomir Iakimov, Alexei A. Zakharov, Rositsa Yakimova and Erik Janzén
  Layer-number determination in graphene on SiC by reflectance mapping
  Carbon, 2014, 77, 492-500.

I. G. Ivanov and E Janzén
  Resonant ionization of shallow donors in electric field
 
Altmetric usage: 1

  Physica Scripta, 2014, 89(8), 085802.

Milan Yazdanfar, Pontus Stenberg, Ian Don Booker, Ivan Gueorguiev Ivanov, Olle Kordina, Henrik Pedersen and Erik Janzén
  Process stability and morphology optimization of very thick 4H-SiC epitaxial layers grown by chloride-based CVD
  Journal of Crystal Growth, 2013, 380, 55-60.
 Web of Science® Times Cited: 2

Susann Schmidt, Cecilia Goyenola, Gueorgui Kostov Gueorguiev, Jens Jensen, Grzegorz Greczynski, Ivan Gueorguiev Ivanov, Zs Czigany and Lars Hultman
  Reactive high power impulse magnetron sputtering of CFx thin films in mixed Ar/C4F4 and Ar/C4F8 discharges
  Thin Solid Films, 2013, 542, 21-30.
 Web of Science® Times Cited: 1

N. T. Son, J Isoya, I. G. Ivanov, T Oshima and E Janzén
  Magnetic resonance identification ofhydrogen at a zinc vacancy in ZnO
  Journal of Physics: Condensed Matter, 2013, 25, 335804.
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X. T. Trinh, D Nilsson, I. G. Ivanov, E Janzén, A Kakanakova-Georgieva and N.T. Son
  Negative-U behavior of the Si donor in Al0.77Ga0.23N
  Applied Physics Letters, 2013, 103(4), 042101.
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 Web of Science® Times Cited: 2

Milan Yazdanfar, Ivan Gueorguiev Ivanov, Henrik Pedersen, Olle Kordina and Erik Janzén
  Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates
  Journal of Applied Physics, 2013, 113(22), .
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 Web of Science® Times Cited: 4

Jan Eric Stehr, Xingjun Wang, Stanislav Filippov, S J. Pearton, Ivan Gueorguiev Ivanov, Weimin Chen and Irina Buyanova
  Defects in N, O and N, Zn implanted ZnO bulk crystals
  Journal of Applied Physics, 2013, 113(10), 103509.
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 Web of Science® Times Cited: 5

Jianwu Sun, Ivan Gueorguiev Ivanov, Rickard Liljedahl, Rositsa Yakimova and Mikael Syväjärvi
  Considerably long carrier lifetimes in high-quality 3C-SiC(111)
  Applied Physics Letters, 2012, 100(25), 252101.
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 Web of Science® Times Cited: 8

Andreas Gällström, Björn Magnusson, Franziska Beyer, Adam Gali, Nguyen Son Tien, Stefano Leone, Ivan Gueorguiev Ivanov, Carl Hemmingsson, Anne Henry and Erik Janzén
  Optical identification and electronic configuration of tungsten in 4H-and 6H-SiC
  Physica. B, Condensed matter, 2012, 407(10), 1462-1466.
 Web of Science® Times Cited: 2

Susann Schmidt, Grzegorz Greczynski, Cecilia Goyenola, Gueorgui Kostov Gueorguiev, Zs Czigany, Jens Jensen, Ivan Gueorguiev Ivanov and Lars Hultman
  CF(x) thin solid films deposited by high power impulse magnetron sputtering: Synthesis and characterization
  Surface & Coatings Technology, 2011, 206(4), 646-653.
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 Web of Science® Times Cited: 5

L.L. Yang, Qingxiang Zhao, G.Z. Xing, D.D. Wang, T. Wu, Magnus Willander, Ivan Gueorguiev Ivanov and J.H. Yang
  A SIMS study on Mg diffusion in Zn(0.94)Mg(0.06)O/ZnO heterostructures grown by metal organic chemical vapor deposition
  Applied Surface Science, 2011, 257(20), 8629-8633.
 Web of Science® Times Cited: 5

J W Sun, Ivan Gueorguiev Ivanov, S Juillaguet and J Camassel
  Splitting of type-I (N-B, P-Al) and type-II (N-Al, N-Ga) donor-acceptor pair spectra in 3C-SiC
  PHYSICAL REVIEW B, 2011, 83(19), 195201.
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Nguyen Tien Son, J. Isoya, T Umeda, Ivan Gueorguiev Ivanov, Anne Henry, T. Ohshima and Erik Janzén
  EPR and ENDOR Studies of Shallow Donors in SiC
  Applied Magnetic Resonance, 2010, 39(1-2), 49-85.
 Web of Science® Times Cited: 3

Ivan Gueorguiev Ivanov, Anne Henry, Fei Yan, W J Choyke and Erik Janzén
  Ionization energy of the phosphorus donor in 3C-SiC from the donor-acceptor pair emission
  JOURNAL OF APPLIED PHYSICS, 2010, 108(6), 063532.
   Fulltext  PDF  
 Web of Science® Times Cited: 4

Li-Li Yang, Qingxiang Zhao, Magnus Willander, J H Yang and Ivan Gueorguiev Ivanov
  Annealing effects on optical properties of low temperature grown ZnO nanorod arrays
  Journal of Applied Physics, 2009, 105(5), 053503.
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 Web of Science® Times Cited: 63

Jawad ul-Hassan, Anne Henry, Ivan Gueorguiev Ivanov and J. Peder Bergman
  In-grown stacking faults in 4H-SiC epilayer grown on off-cut substrates
  Journal of Applied Physics, 2009, 105(12), 123513.
 Web of Science® Times Cited: 18

Son Tien Nguyen, Ivan Gueorguiev Ivanov, A. Kuznetsov, B.G. Svensson, Qing Xiang Zhao, Magnus Willander, N. Morishita, T. Ohshima, H. Itoh, J. Isoya, Erik Janzén and Rositsa Yakimova
  Recombination centers in as-grown and electron-irradiated ZnO substrates
  Journal of Applied Physics, 2007, 102(9), .
 Web of Science® Times Cited: 11

Son Tien Nguyen, Ivan Gueorguiev Ivanov, A. Yu. Kuznetsov, B.G. Svensson, Qing Xiang Zhao, Magnus Willander, M.N. Morishita, T. Ohshima, H. Itoh, J. Isoya, Erik Janzén and Rositsa Yakimova
  Magnetic resonance studies of defects in electron-irradiated ZnO substrates
  Physica. B, Condensed matter, 2007, 401-402, 507-510.
 Web of Science® Times Cited: 2

Daniela Gogova, E. Talik, Ivan Gueorguiev Ivanov and Bo Monemar
  Large-area free-standing GaN substrate grown by hydride vapor phase epitaxy on epitaxial lateral overgrown GaN template
  Physica. B, Condensed matter, 2006, 371(1), 133-139.
 Web of Science® Times Cited: 8

Rositsa Yakimova, Gholam Reza Yazdi, Son Tien Nguyen, Ivan Gueorguiev Ivanov, Mikael Syväjärvi, S. Sun, G. Tompa, A. Kuznetsov and B. Svensson
  Optical and Morphological Features of Bulk and Homoepitaxial ZnO
  Superlattices and Microstructures, 2006, 39, 247-256.
 Web of Science® Times Cited: 10

Ivan Gueorguiev Ivanov, A. Stelmach, M. Kleverman and Erik Janzén
  Effective-mass approximation for shallow donors in uniaxial indirect band-gap crystals and application to 4H-SiC
  , 2006, , .
 Web of Science® Times Cited: 5

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, Anne Henry, Ivan Gueorguiev Ivanov, Peder Bergman, Bo Monemar, S. Chichibu and T. Onuma
  Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC
  Journal of Applied Physics, 2006, 99(9), .
 Web of Science® Times Cited: 35

JF Falth, MN Gurusinghe, XY Liu, TG Andersson, Ivan Gueorguiev Ivanov, Bo Monemar, HH Yao and SC Wang
  Influence of dislocation density on photoluminescence intensity of GaN
  Journal of Crystal Growth, 2005, 278(01-Apr), 406-410.
 Web of Science® Times Cited: 5

Bo Monemar, Henrik Larsson, Carl Hemmingsson, Ivan Gueorguiev Ivanov and Daniela Gogova
  Growth of thick GaN layers with hydride vapour phase epitaxy
  Journal of Crystal Growth, 2005, 281(1), 17-31.
 Web of Science® Times Cited: 41

A. Kasic, D. Gogova, Henrik Larsson, Ivan Gueorguiev Ivanov, Jens Birch, Bo Monemar, M. Fehrer and V. Härle
  Highly homogeneous bulk-like 2'' GaN grown by HVPE on MOCVD-GaN template
  Journal of Crystal Growth, 2005, 275, e387-e393.
 Web of Science® Times Cited: 5

Bo Monemar, Tanja Paskova, Carl Hemmingsson, Henrik Larsson, Plamen Paskov, Ivan Gueorguiev Ivanov and Aleksander Kasic
  Growth of thick GaN layers by hydride vapor phase epitaxy
  Journal of Ceramic Processing Research, 2005, 6(2), 153-162.

Daniela Gogova, Henrik Larsson, A. Kasic, Gholam Reza Yazdi, Ivan Gueorguiev Ivanov, Rositsa Yakimova, Bo Monemar, E. Aujol, E. Frayssinet, J-P. Faurie, B. Beaumont and P. Gibart
  High-Quality 2'' Bulk-Like Free-Standing GaN Grown by HydrideVapour Phase Epitaxy on a Si-doped Metal Organic Vapour Phase Epitaxial GaN Template with an Ultra Low Dislocation Density
  Japanese Journal of Applied Physics, 2005, 44, 1181-1185.
 Web of Science® Times Cited: 13

A. Kasic, Daniela Gogova, Henrik Larsson, Carl Hemmingsson, Ivan Gueorguiev Ivanov, Rositsa Yakimova, Bo Monemar and M. Heuken
  Characterization of crack-free relaxed GaN grown on 2″ sapphire
  Journal of Applied Physics, 2005, 98(7), 73525.
 Web of Science® Times Cited: 4

Ivan Gueorguiev Ivanov, Anne Henry and Erik Janzén
  Ionization energies of phosphorus and nitrogen donors and aluminum acceptors in 4H silicon carbide from the donor-acceptor pair emission
  Physical Review B. Condensed Matter and Materials Physics, 2005, 71(24), 241201-241201-4.
 Web of Science® Times Cited: 18

Tanja Paskova, Vanya Darakchieva, E Valcheva, Plamen Paskov, Ivan Gueorguiev Ivanov, Bo Monemar, T Bottcher, C Roder and D Hommel
  Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications: Strain distribution and wafer bending
  Journal of Electronic Materials, 2004, 33(5), 389-394.
 Web of Science® Times Cited: 15

Daniela Gogova, A. Kasic, Henrik Larsson, B. Pécz, Rositsa Yakimova, Ivan Gueorguiev Ivanov and Bo Monemar
  Characterization of high-quality free-standing GaN grown by HVPE
  Physica Scripta, 2004, T114, 18-21.
 Web of Science® Times Cited: 2

A. Kasic, Daniela Gogova, Henrik Larsson, Carl Hemmingsson, Ivan Gueorguiev Ivanov, Bo Monemar, C. Bundesmann and M. Schubert
  Micro-Raman scattering profiling studies on HVPE-grown free-standing GaN
  Physica status solidi. A, Applied research, 2004, 201(12), 2773-2776.
 Web of Science® Times Cited: 7

Irina Buyanova, Morteza Izadifard, Ivan Gueorguiev Ivanov, Jens Birch, Weimin Chen, M. Felici, A. Polimeni, M. Capizzi, Y. G. Hong, H. P. Xin and C. W. Tu
  Direct experimental evidence for unusual effects of hydrogen on the electronic and vibrational properties of GaNxP1−x alloys: a proof for a general property of dilute nitrides
  Physical Review B Condensed Matter, 2004, 70(24), 245215-245219.
 Web of Science® Times Cited: 14

Adam Gali, P Deak, E Rauls, Tien Son Nguyen, Ivan Gueorguiev Ivanov, Fredrik Carlsson, Erik Janzén and WJ Choyke
  Correlation between the antisite pair and the D-I center in SiC
  Physical Review B. Condensed Matter and Materials Physics, 2003, 67(15), .
 Web of Science® Times Cited: 51

Ivan Gueorguiev Ivanov, Björn Magnusson and Erik Janzén
  Optical selection rules for shallow donors in 4H-SiC and ionization energy of the nitrogen donor at the hexagonal site
  Physical Review B. Condensed Matter and Materials Physics, 2003, 67(16), .
 Web of Science® Times Cited: 14

Ivan Gueorguiev Ivanov, Björn Magnusson and Erik Janzén
  Analysis of the sharp donor-acceptor pair luminescence in 4H-SiC doped with nitrogen and aluminum
  Physical Review B. Condensed Matter and Materials Physics, 2003, 67(16), .
 Web of Science® Times Cited: 13

Daniela Gogova, Henrik Larsson, Rositsa Yakimova, Z. Zolnai, Ivan Gueorguiev Ivanov and Bo Monemar
  Fast growth of high quality GaN
  Physica status solidi. A, Applied research, 2003, 200(1), 13-17.
 Web of Science® Times Cited: 16

Xiangjun Wang, S Olafsson, LD Madsen, S Rudner, Ivan Gueorguiev Ivanov, A Grishin and Ulf Helmersson
  Growth and characterization of Na0.5K0.5NbO3 thin films on polycrystalline Pt80Ir20 substrates
  Journal of Materials Research, 2002, 17(5), 1183-1191.
 Web of Science® Times Cited: 17

Matthias Wagner, Ivan Gueorguiev Ivanov, Liutauras Storasta, Peder Bergman, Björn Magnusson, Weimin Chen and Erik Janzén
  Photoluminescence upconversion in 4H-SiC
  Applied Physics Letters, 2002, 81(14), 2547.
 Web of Science® Times Cited: 1

Irina Buyanova, Ivan Gueorguiev Ivanov, Bo Monemar, Weimin Chen, A. A. Toropov, Ya. V. Terentev, S. V. Sorokin, A. V. Lebedev, S. V. Ivanov and P. S. Kopev
  Tunable laser spectroscopy of spin injection in ZnMnSe/ZnCdSe quantum structures
  Applied Physics Letters, 2002, 81(12), 2196.
 Web of Science® Times Cited: 29

T. Egilsson, Ivan Gueorguiev Ivanov, Anne Henry and Erik Janzén
  Excitation spectra of nitrogen bound excitons in 4H- and 6H-SiC
  Journal of Applied Physics, 2002, 91(3), 2028-2032.
 Web of Science® Times Cited: 7

M Tzolov, N Tzenov, D Dimova-Malinovska, M Kalitzova, C Pizzuto, G Vitali, G Zollo and Ivan Gueorguiev Ivanov
  Modification of the structure of ZnO : Al films by control of the plasma parameters
  Thin Solid Films, 2001, 396(1-2), 274-279.
 Web of Science® Times Cited: 18

V. Donchev, N. Shtinkov, K. Germanova, Ivan Gueorguiev Ivanov, H. Brachkov and Tzv. Ivanov
  Photoluminescene line-shape analysis in quantum wells embedded in superlattices
  Materials science & engineering. C, biomimetic materials, sensors and systems, 2001, 15(1-2), 75-77.
 Web of Science® Times Cited: 3

Ivan Gueorguiev Ivanov, T Egilsson, Anne Henry, Bo Monemar and Erik Janzén
  Resonant sharp hot free-exciton luminescence in 6H-and 4H-SiC due to inhibited exciton-phonon interaction
  Physical Review B. Condensed Matter and Materials Physics, 2001, 64(8), .
 Web of Science® Times Cited: 6

V. Donchev, K. Germanova, N. Shtinkov, Ivan Gueorguiev Ivanov and S. Vlaev
  Photoluminescence study of AlAs/GaAs superlattices containing enlarged wells
  Thin Solid Films, 2000, 364(1), 224-227.
 Web of Science® Times Cited: 3

V. Donchev, Tzv. Ivanov, Ivan Gueorguiev Ivanov, M. Angelov and K. Germanova
  High-temperature excitons in GaAs quantum wells embedded in AlAs/GaAs superlattices
  Vacuum, 2000, 58(2), 478-484.
 Web of Science® Times Cited: 6

N. Shtinkov, V. Donchev, K. Germanova, S. Vlaev and Ivan Gueorguiev Ivanov
  Effect of non-abrupt interfaces in AlAs/GaAs superlattices with embedded GaAs quantum wells
  Vacuum, 2000, 58(2), 561-567.
 Web of Science® Times Cited: 3

M. Tzolov, N. Tzenov, D. Dimova-Malinovska, M. Kalitzova, C. Pizzuto, G. Vitali, G. Zollo and Ivan Gueorguiev Ivanov
  Vibrational properties and structure of undoped and Al-doped ZnO films deposited by RF magnetron sputtering
  Thin Solid Films, 2000, 379(1-2), 28-36.
 Web of Science® Times Cited: 131

T. Egilsson, Anne Henry, Ivan Gueorguiev Ivanov, A. Ellison and Erik Janzén
  Excitation properties of hydrogen-related photoluminescence in 6H-SiC
  Physical Review B. Condensed Matter and Materials Physics, 2000, 62(11), 7162-7168.
 Web of Science® Times Cited: 7

T Egilsson, Ivan Gueorguiev Ivanov, Anne Henry and Erik Janzén
  Zeeman spectroscopy of the D-1 bound exciton in 3C-, and 4H-SiC
  Physica. B, Condensed matter, 1999, 274, 677-680.

Xin Wang, Ulf Helmersson, Lynnette D Madsen, Ivan Ivanov, Peter Münger, Staffan Rudner, B Hjörvarsson and Jan-Erik Sundgren
  Composition, structure, and dielectric tunability of epitaxial SrTiO3 thin films grown by radio frequency magnetron sputtering
  Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, 1999, 17(2), 564-570.

E B Svedberg, Jens Birch, Ivan Ivanov, Peter Münger and Jan- Erik Sundgren
  Asymmetric interface broadening in epitaxial Mo/W (001) superlattices grown by magnetron sputtering
  Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, 1998, 16(2), 633-638.

Olle Kordina, Christer Hallin, Anne Henry, Peder Bergman, Ivan Gueorguiev Ivanov, A. Ellison, Nguyen Tien Son and Erik Janzén
  Growth of SiC by "Hot-Wall" CVD and HTCVD
  Physica status solidi. B, Basic research, 1997, 202(1), 321-334.

M P Johansson, Ivan Ivanov, Lars Hultman, Peter Münger and A Schutze
  Low-temperature deposition of cubic BN: C films by unbalanced direct current magnetron sputtering of a B4C target
  Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, 1996, 14(6), 3100-3107.

Chapters in Books

Erik Janzén, Adam Gali, Anne Henry, Ivan Gueorguiev Ivanov, Björn Magnusson and Son Tien Nguyen
  Defects in SiC
  Defects in Microelectronic Materials and Devices, Taylor and Francis LLC, 2008, 770.


T Egilsson, Ivan Gueorguiev Ivanov, Nguyen Tien Son, Anne Henry, Peder Bergman and Erik Janzén
  Exciton and defect photoluminescence from SiC
  Silicon carbide and related materials 2002: ECSCRM 2002 proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden, , 2003, 81-120.


Conference Articles

Ivan Gueorguiev Ivanov, Milan Yazdanfar, Björn Lundqvist, Jr-Tai Chen, Jawad ul-Hassan, Pontus Stenberg, Rickard Liljedahl, Nguyen Tien Son, Joel W. III Ager, Olle Kordina and Erik Janzén
  High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure (SiC)-Si-28-C-12, Natural and C-13 - Enriched 4H-SIC
  Silicon Carbide and Related Materials 2013, PTS 1 AND 2, 2014.


Björn Lundqvist, Peter Raad, Milan Yazdanfar, Pontus Stenberg, Rickard Liljedahl, Pavel Komarov, Niklas Rorsman, J. Ager III, Olle Kordina, Ivan Gueorguiev Ivanov and Erik Janzén
  Thermal Conductivity of Isotopically Enriched Silicon Carbide
  Thermal Investigations of ICs and Systems (THERMINIC), 2013, 2013.


Milan Yazdanfar, Pontus Stenberg, Ian Don Booker, Ivan Gueorguiev Ivanov, Henrik Pedersen, Olle Kordina and Erik Janzén
  Morphology optimization of very thick 4H-SiC epitaxial layers
  SILICON CARBIDE AND RELATED MATERIALS 2012, 2013.


Anne Henry, Ivan Gueorguiev Ivanov, Erik Janzén, Tomoaki Hatayama, Hiroshi Yano and Takashi Fuyuki
  Photoluminescence of 8H-SiC
  Silicon Carbide and Related Materials 2012, 2013.


 Web of Science® Times Cited: 1  Fulltext PDF

Ivan Gueorguiev Ivanov, Andreas Gällström, Stefano Leone, Olle Kordina, Nguyen Tien Son, Anne Henry, Viktor Ivády, Adam Gali and Erik Janzén
  Optical properties of the niobium centre in 4H, 6H, and 15R SiC
  SILICON CARBIDE AND RELATED MATERIALS 2012, 2013.


Andreas Gällström, Björn Magnusson, Franziska Beyer, Adam Gali, Nguyen Tien Son, Stefano Leone, Ivan G. Ivanov, Anne Henry, Carl Hemmingsson and Erik Janzén
  Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC
  Materials Science Forum Vols 717 - 720, 2012.


I. G. Ivanov, A Gällström, R. Coble, R. P. Devaty, W. J. Choyke and Erik Janzén
  Investigation of intrinsic carbon-related defects in 4H-SiC by selective-excitation photoluminescence spectroscopy
  Materials Science Forum Vols 717 - 720, 2012.


 Web of Science® Times Cited: 1

Jawad ul-Hassan, Chariya Virojanadara, A. Meyer, Ivan Gueorguiev Ivanov, J. I. Flege, Somsakul Watcharinyanon, J Falta, Leif I. Johansson and Erik Janzén
  Control of epitaxial graphene thickness on 4H-SiC(0001) and bufferlayer removal through hydrogen intercalation
  Materials Science Forum (Volumes 717 - 720), 2012.


 Web of Science® Times Cited: 1

Ivan Ivanov, Anne Henry, Fei Yan, Wolfgang J. Choyke and Erik Janzén
  Donor-Acceptor Pair Luminescence of P-Al and N-Al Pairs in 3C-SiC and the Ionization Energy of the P Donor
  <em>Materials Science Forum Vols. 679-680 (2011) pp 245-248</em>, 2011.


  Fulltext PDF

Ivan Gueorguiev Ivanov, Jawad ul-Hassan, Anne Henry and Erik Janzén
  Temperature Dependence and Selective Excitation of the Phosphorus Related Photoluminescence in 4H-SiC
  Materials Science Forum, Vols. 615-617, 2009.


Ivan Gueorguiev Ivanov, C. Persson, Anne Henry and Erik Janzén
  Wave-Function Symmetry and the Properties of Shallow P Donors in 4H SiC
  Materials Science Forum, Vols. 600-603, 2009.


 Web of Science® Times Cited: 3

Anne Henry, Anders Lundskog, Justinas Palisaitis, Ivan Ivanov, Anelia Kakanakova-Georgieva, Urban Forsberg, Per Persson and Erik Janzén
  AlGaN Multiple Quantum Wells and AlN Grown in a Hot-wall MOCVD for Deep UV Applications
  ECS Transactions, Vol. 25, Iss. 8, 2009.


Son Tien Nguyen, Ivan Gueorguiev Ivanov, A. Kuznetsov, B.G. Svensson, Q.X. Zhao, Magnus Willander, M.N. Morishita, T. Ohshirma, H. Itoh, Erik Janzén and Rositsa Yakimova
  Common point defects in as-grown ZnO substrates studied by optical detection of magnetic resonance
  Journal of Crystal Growth, Vol. 310, 2008.


 Web of Science® Times Cited: 1

Tatiana Choubina, M.M. Glazov, A.A. Toropov, Ivan Gueorguiev Ivanov, N.A. Gippius, A. Vasson, J. Leymaire, A. Kavokin, A. Usui, Peder Bergman, Galia Pozina and Bo Monemar
  Realization of slow light in GaN crystals
  IWN 2008,2008, 2008.


Tatiana Choubina, M.M. Glazov, A.A. Toropov, N.A. Gippius, Peder Bergman, Bo Monemar, A. Usui, A. Vasson, J. Leymarie, Ivan Gueorguiev Ivanov and P.S. Kopev
  Slow light in GaN
  16th Int. Symp. ¿Nanostructures: Physics and Technology,2008, 2008.


Galia Pozina, Carl Hemmingsson, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Ivan Gueorguiev Ivanov, Bo Monemar, Lars Hultman and Erik Janzén
  Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4- SiC substrate
  8th International Conference on Physics of Light-Matter Coupling in Nanostructures,2008, 2008.


Anders Lundskog, Urban Forsberg, Anelia Kakanakova-Georgieva, Rafal Ciechonski, Ivan Gueorguiev Ivanov, Vanya Darakchieva, Erik Janzén, M. Fagerlind, J-Y. Shiu and N. Rorsman
  Highly Uniform Hot-Wall MOCVD Growth of High-Quality AlGaN/GaN HEMT-Structures on 100 mm Semi-Insulating 4H-SiC Substrates
  ICNS-7,2007, 2007.


Anelia Kakanakova-Georgieva, Urban Forsberg, Ivan Gueorguiev Ivanov and Erik Janzén
  Uniform hot-wall MOCVD epitaxial growth of 2 inch AlGaN/GaN HEMT structures
  Journal of Crystal Growth, Vol. 300, 2007.


 Web of Science® Times Cited: 16

Ivan Gueorguiev Ivanov and Erik Janzén
  Theory of the Stark Effect on the Donor Levels in 4H Silicon Carbide
  Materials Science Forum, vol. 556-557, 2007.


 Web of Science® Times Cited: 1

Urban Forsberg, Anelia Kakanakova-Georgieva, Ivan Gueorguiev Ivanov and Erik Janzén
  Hot-wall MOCVD growth and characterization of III-nitrides for HEMT application
  WOCSDICE 2006,2006, 2006.


Anelia Kakanakova-Georgieva, Urban Forsberg, Ivan Gueorguiev Ivanov and Erik Janzén
  Hot-wall MOCVD developments towards 2 inch AlGaN/GaN epitaxial growth
  ICMOVPE2006,2006, 2006.


Ivan Gueorguiev Ivanov, Anne Henry and Erik Janzén
  Donor-acceptor Pair Luminescence of Phosphorus-Aluminum and Nitrogen-Aluminum Pairs in 4H SiC
  Materials Science forum, Vols. 527-529, 2006.


Ivan Gueorguiev Ivanov, A Stelmach, M Kleverman and Erik Janzén
  Effective-mass theory of shallow donors in 4H-SIC
  Materials Science Forum(ISSN 0255-5476), Vols. 483-485, 2005.


 Web of Science® Times Cited: 4

Anelia Kakanakova-Georgieva, Ivan Gueorguiev Ivanov, Christer Hallin and Erik Janzén
  Hot-wall MOCVD grown homoepitaxial GaN layers with intense intrinsic excitonic structure
  Phys. Stat. Sol. (a), Vol. 202, 2005.


Irina Buyanova, Morteza Izadifard, Ivan Gueorguiev Ivanov, Jens Birch, Wei Min Chen, M. Felici, A. Polimeni, M. Capizzi, Y.G. Hong, H.P. Xin and C.W. Tu
  Unusual effects of hydrogen in GaNP alloys: A general property of dilute nitrides
  2005 MRS Spring Meeting,2005, 2005.


Daniela Gogova, S. Kanev, Bo Monemar, Ivan Gueorguiev Ivanov, Rositsa Yakimova and E. Talik
  Growth and characterization of free-standing HVPE GaN on two-step epitaxial lateral overgrown GaN template
  , 2005.


Erik Janzén, Peder Bergman, Örjan Danielsson, Urban Forsberg, Christer Hallin, Jawad ul-Hassan, Anne Henry, Ivan Gueorguiev Ivanov, Anelia Kakanakova-Gueorguie, Per Persson and Qamar Ul Wahab
  SiC and III-nitride Growth in a Hot-wall CVD Reactor
  Materials Science Forum, ISSN 0255-5476, volume 483-485, 2005.


 Web of Science® Times Cited: 6

Irina Buyanova, Morteza Izadifard, Ivan Gueorguiev Ivanov, Jens Birch, Weimin Chen, A. Polimeni, M. Capizzi, Y. G. Hong and C. W. Tu
  Effects of hydrogen on electronic and crystalline structure of GaNP
  EMRS-2004 Spring Meeting,2004, 2004.


Christer Hallin, Qamar Ul Wahab, Ivan Gueorguiev Ivanov, Peder Bergman and Erik Janzén
  Homoepitaxial On-Axis Growth of 4H- and 6H-SiC by CVD
  Materials Science Forum, Vols. 457-460, 2004.


 Web of Science® Times Cited: 14

Ivan Gueorguiev Ivanov and Erik Janzén
  Photoluminescence Excitation Spectroscopy on the Donor-Acceptor Pair Luminescence in 4H and 6H SiC
  Mater. Sci. Forum, Vol. 457-460, 2004.


L. Kassamakova-Kolaklieva, Liutauras Storasta, Ivan Gueorguiev Ivanov, Björn Magnusson, S. Contreras, C. Consejo, J. Pernot, M. Zielinski and Erik Janzén
  Temperature-Dependent Hall Effect Measurements in Low - Compensated p-Type 4H-SiC
  Mater. Sci. Forum, Vol. 457-460, 2004.


 Web of Science® Times Cited: 4

Adam Gali, P. Deák, E. Rauls, Son Tien Nguyen, Ivan Gueorguiev Ivanov, Fredrik Carlsson, Erik Janzén and W.J. Choyke
  Antisites as possible origin of irradiation induced photoluminescence centers in SiC: A theoretical study on clusters of antisites and carbon interstitials in 4H-SiC
  Mater. Sci. Forum, Vol. 457-460, 2004.


 Web of Science® Times Cited: 1

Anelia Kakanakova-Georgieva, Christer Hallin, Ivan Gueorguiev Ivanov and Erik Janzén
  AlGaN/GaN epitaxial growth on SiC in a hot-wall MOCVD system
  European Microwave Week,2004, 2004.


Erik Janzén, Ivan Gueorguiev Ivanov, Son Tien Nguyen, Björn Magnusson, Anne Henry and J. Isoya
  Defects in SiC
  International Seminar on SiC and Related Materials,2004, 2004.


Ivan Gueorguiev Ivanov, A Ellison and Erik Janzén
  Donor-acceptor pair luminescence in 4H-SiC doped with nitrogen and aluminum
  Materials Science Forum, Vols. 433-436, 2003.


Matthias Wagner, Ivan Gueorguiev Ivanov, Liutauras Storasta, JP Bergman, Björn Magnusson, Weimin Chen and Erik Janzén
  Photoluminescence up-conversion processes in SiC
  Materials Science Forum, Vols. 433-436, 2003.


Adam Gali, P. Deak, E. Rauls, Tien Son Nguyen, Ivan Gueorguiev Ivanov, Fredrik Carlsson, Erik Janzén and W.J. Choyke
  Anti-site pair in SiC: A model of the DI center
  Physica B, 2003.


 Web of Science® Times Cited: 7

Erik Janzén, Ivan Gueorguiev Ivanov, Son Tien Nguyen, Björn Magnusson, Z Zolnai, Anne Henry, Peder Bergman, Liutauras Storasta and Fredrik Carlsson
  Defects in SiC
  Physica B: Condensed Matter, Vols. 340-342, 2003.


 Web of Science® Times Cited: 14

Ivan Gueorguiev Ivanov, J Zhang, Liutauras Storasta and Erik Janzén
  Photoconductivity of lightly-doped and semi-insulating 4H-SiC and the free exciton binding energy
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 1

Ivan Gueorguiev Ivanov, T Egilsson, J Zhang, A Ellison and Erik Janzén
  Intrinsic photoconductivity of 6H-SiC and the free-exciton binding energy
  Materials Science Forum, Vols. 353-356, 2001.


Anne Henry, T Egilsson, Ivan Gueorguiev Ivanov and Erik Janzén
  Metastability of a hydrogen-related defect in 6H-SiC
  Materials Science Forum, Vols. 338-342, 2000.


 Web of Science® Times Cited: 6

T Egilsson, Ivan Gueorguiev Ivanov, Anne Henry and Erik Janzén
  Pseudo-donors in SiC
  Materials Science Forum, Vols. 338-342, 2000.


 Web of Science® Times Cited: 2

* Social media data based on publications from 2011 to present and with a DOI; data delivered by Altmetric.com.