Publications for Ian Don Booker
Co-author map based on ISI articles 2007-

Journal Articles

Martin Fagerlind, Ian Don Booker, Peder Bergman, Erik Janzén, Herbert Zirath and Niklas Rorsman
  Influence of Large-Aspect-Ratio Surface Roughness on Electrical Characteristics of AlGaN/AlN/GaN HFETs
  IEEE transactions on device and materials reliability, 2012, 12(3), 538-546.

Conference Articles

Louise Lilja, Jawad ul-Hassan, Ian Booker, Peder Bergman and Erik Janzén
  Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers
  Materials Science Forum Vol 740 - 742, 2013.


Jawad ul Hassan, Ian Booker, Louise Lilja, Anders Hallén, Martin Fagerlind, Peder Bergman and Erik Janzén
  On-axis homoepitaxial growth of 4H-SiC PiN structure for high powerapplications
  Materials Science Forum (Volumes 740 - 742), 2013.


Louise Lilja, Jawad ul-Hassan, Ian D. Booker, Peder Bergman and Erik Janzén
  The Effect of Growth Conditions on Carrier Lifetime in n-type 4H-SiC Epitaxial Layers
  Materials Science Forum Vol 717 - 720, 2012.


Jawad Hassan, Louise Lilja, Ian Don Booker, Peder Bergman and Erik Janzén
  Influence of Growth Mechanism on Carrier Lifetime in on-axis Homoepitaxial Layers of 4H-SiC
  Materials Science Forum Vols 717 - 720, 2012.


Ian Don Booker, Jawad Hassan, Anders Hallén,, Einar Ö. Sveinbjörnsson, Olle Kordina and Peder Bergman
  Comparison of Post-Growth Carrier Lifetime Improvement Methods for 4H-SiC Epilayers
  Materials Science Forum Vols 717 - 720, 2012.


 Web of Science® Times Cited: 1

Peder Bergman, Ian Don Booker, Louise Lilja, Jawad Hassan and Erik Janzén
  Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation
  Materials Science Forum Vols 717 - 720, 2012.


Ian Don Booker, Jawad Hassan, Erik Janzén and Peder Bergman
  High-Resolution Time-Resolved Carrier Lifetime and Photoluminescence Mapping of 4H-SiC Epilayers
  Materials Science Forum Vols 717 - 720, 2012.