Publications for Ian Don Booker
Co-author map based on ISI articles 2007-

Keywords

z(1/2) thick temperature substrates roughness reactor n-type morphology lifetimes lifetime homoepitaxial excellent epitaxial epilayers defect cvd carrier c/si 4h-sic 100

Journal Articles

Louise Lilja, Ian Don Booker, Jawad ul-Hassan, Erik Janzén and Peder Bergman
  The influence of growth conditions on carrier lifetime in 4H-SiC epilayers
  Journal of Crystal Growth, 2013, 381, 43-50.

Milan Yazdanfar, Pontus Stenberg, Ian Don Booker, Ivan Gueorguiev Ivanov, Olle Kordina, Henrik Pedersen and Erik Janzén
  Process stability and morphology optimization of very thick 4H-SiC epitaxial layers grown by chloride-based CVD
  Journal of Crystal Growth, 2013, 380, 55-60.

Louise Lilja, Jawad ul-Hassan, Ian Booker, Peder Bergman and Erik Janzén
  Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers
  Materials Science Forum, 2013, 740-742, 637-640.
   Fulltext  PDF  

Martin Fagerlind, Ian Don Booker, Peder Bergman, Erik Janzén, Herbert Zirath and Niklas Rorsman
  Influence of Large-Aspect-Ratio Surface Roughness on Electrical Characteristics of AlGaN/AlN/GaN HFETs
  IEEE transactions on device and materials reliability, 2012, 12(3), 538-546.
 Web of Science® Times Cited: 1

Conference Articles

Milan Yazdanfar, Pontus Stenberg, Ian Don Booker, Ivan Gueorguiev Ivanov, Henrik Pedersen, Olle Kordina and Erik Janzén
  Morphology optimization of very thick 4H-SiC epitaxial layers
  SILICON CARBIDE AND RELATED MATERIALS 2012, 2013.


Jawad ul Hassan, Ian Booker, Louise Lilja, Anders Hallén, Martin Fagerlind, Peder Bergman and Erik Janzén
  On-axis homoepitaxial growth of 4H-SiC PiN structure for high power applications
  Materials Science Forum (Volumes 740 - 742), 2013.


Louise Lilja, Jawad ul-Hassan, Ian D. Booker, Peder Bergman and Erik Janzén
  The Effect of Growth Conditions on Carrier Lifetime in n-type 4H-SiC Epitaxial Layers
  Materials Science Forum Vol 717 - 720, 2012.


 Web of Science® Times Cited: 3

Jawad Hassan, Louise Lilja, Ian Don Booker, Peder Bergman and Erik Janzén
  Influence of Growth Mechanism on Carrier Lifetime in on-axis Homoepitaxial Layers of 4H-SiC
  Materials Science Forum Vols 717 - 720, 2012.


Ian Don Booker, Jawad Hassan, Anders Hallén,, Einar Ö. Sveinbjörnsson, Olle Kordina and Peder Bergman
  Comparison of Post-Growth Carrier Lifetime Improvement Methods for 4H-SiC Epilayers
  Materials Science Forum Vols 717 - 720, 2012.


 Web of Science® Times Cited: 1

Peder Bergman, Ian Don Booker, Louise Lilja, Jawad Hassan and Erik Janzén
  Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation
  Materials Science Forum Vols 717 - 720, 2012.


Ian Don Booker, Jawad Hassan, Erik Janzén and Peder Bergman
  High-Resolution Time-Resolved Carrier Lifetime and Photoluminescence Mapping of 4H-SiC Epilayers
  Materials Science Forum Vols 717 - 720, 2012.