Publications for Henrik Pedersen
Co-author map based on ISI articles 2007-

Publications mentioned in social media 21 times*

Keywords

vapor thick temperature substrates silicon sic precursor power on-axis morphology low-energy epitaxial epilayers energy defects cvd chloride-based c/si adsorption 4h-sic

Journal Articles

Henrik Pedersen and Simon D. Elliott
  Studying chemical vapor deposition processes with theoretical chemistry
 
Altmetric usage: 5

  Theoretical Chemistry accounts, 2014, 133(5), 1476.
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M. Chubarov, Henrik Pedersen, Hans Högberg, Stanislav Filippov, J.A. A. Engelbrecht, J. O'Connel and Anne Henry
  Boron nitride: A new photonic material
  Physica. B, Condensed matter, 2014, 439, 29-34.
   Fulltext  PDF  

Daniel Lundin, Jens Jensen and Henrik Pedersen
  Influence of pulse power amplitude on plasma properties and film deposition in high power pulsed plasma enhanced chemical vapor deposition
 
Altmetric usage: 1

  Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, 2014, 32(3), .
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Milan Yazdanfar, Henrik Pedersen, Pitsiri Sukkaew, Ivan Gueorguiev Ivanov, Örjan Danielsson, Olle Kordina and Erik Janzén
  On the use of methane as a carbon precursor in Chemical Vapor Deposition of silicon carbide
 
Altmetric usage: 1

  Journal of Crystal Growth, 2014, 390, 24-29.
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M. Chubarov, Henrik Pedersen, Hans Högberg, Zs. Czigany and Anne Henry
  Chemical vapour deposition of epitaxial rhombohedral BN thin films on SiC substrates
 
Altmetric usage: 6

  CrysteEngComm, 2014, 16(24), 5430-5436.
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Milan Yazdanfar, Pontus Stenberg, Ian Don Booker, Ivan Gueorguiev Ivanov, Olle Kordina, Henrik Pedersen and Erik Janzén
  Process stability and morphology optimization of very thick 4H-SiC epitaxial layers grown by chloride-based CVD
  Journal of Crystal Growth, 2013, 380, 55-60.
 Web of Science® Times Cited: 1

Milan Yazdanfar, Ivan Gueorguiev Ivanov, Henrik Pedersen, Olle Kordina and Erik Janzén
  Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates
  Journal of Applied Physics, 2013, 113(22), .
   Fulltext  PDF  
 Web of Science® Times Cited: 3

Henrik Pedersen, Ching-Chi Lin and Lars Ojamäe
  On the change of preferential growth orientation in chemical vapor deposition of titanium carbide by aromatic hydrocarbon precursors
  Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, 2013, 31(2), .
   Fulltext  PDF  
 Web of Science® Times Cited: 1

Mikhail Chubarov, Henrik Pedersen, Hans Högberg and Anne Henry
  On the effect of silicon in CVD of sp2 hybridized boron nitride thin films
 
Altmetric usage: 4

  CrysteEngComm, 2013, 15(3), 455-458.
 Web of Science® Times Cited: 5

C. Arhammar, F. Silvearv, A. Bergman, S. Norgren, Henrik Pedersen and R. Ahuja
  A theoretical study of possible point defects incorporated into alpha-alumina deposited by chemical vapor deposition
 
Altmetric usage: 1

  Theoretical Chemistry accounts, 2013, 133(2), 1433.
 Web of Science® Times Cited: 1

Emil Kalered, Henrik Pedersen, Erik Janzén and Lars Ojamäe
  Adsorption and surface diffusion of silicon growth species in silicon carbide chemical vapour deposition processes studied by quantum-chemical computations
 
Altmetric usage: 1

  Theoretical Chemistry accounts, 2013, 132(12), .
 Web of Science® Times Cited: 2

Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, J Isoya, N Morishita, T Ohshima and Erik Janzén
  Capacitance transient study of a bistable deep level in e(-)-irradiated n-type 4H-SiC
  Journal of Physics D: Applied Physics, 2012, 45(45), .
   Fulltext  PDF  
 Web of Science® Times Cited: 1

Henrik Pedersen, Carina Höglund, Jens Birch, Jens Jensen and Anne Henry
  Low Temperature CVD of Thin, Amorphous Boron-Carbon Films for Neutron Detectors
  Chemical Vapor Deposition, 2012, 18(7-9), 221-224.
   Fulltext  PDF  
 Web of Science® Times Cited: 1

Henrik Pedersen, Petter Larsson, Asim Aijaz, Jens Jensen and Daniel Lundin
  A novel high-power pulse PECVD method
 
Altmetric usage: 2

  Surface & Coatings Technology, 2012, 206(22), 4562-4566.
   Fulltext  PDF  
 Web of Science® Times Cited: 8

Henrik Pedersen, Mikhail Chubarov, Hans Högberg, Jens Jensen and Anne Henry
  On the effect of water and oxygen in chemical vapor deposition of boron nitride
  Thin Solid Films, 2012, 520(18), 5889-5893.
   Fulltext  PDF  
 Web of Science® Times Cited: 2

Mikhail Chubarov, Henrik Pedersen, Hans Högberg, Jens Jensen and Anne Henry
  Growth of High Quality Epitaxial Rhombohedral Boron Nitride
  Crystal Growth & Design, 2012, 12(6), 3215-3220.
 Web of Science® Times Cited: 5

Henrik Pedersen, Stefano Leone, Olle Kordina, Anne Henry, Shin-ichi Nishizawa, Yaroslav Koshka and Erik Janzén
  Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications
  Chemical Reviews, 2012, 112(4), 2434-2453.
 Web of Science® Times Cited: 21

Anne Henry, Stefano Leone, Franziska Beyer, Henrik Pedersen, Olle Kordina, Sven Andersson and Erik Janzén
  SiC epitaxy growth using chloride-based CVD
  Physica. B, Condensed matter, 2012, 407(10), 1467-1471.
   Fulltext  PDF  
 Web of Science® Times Cited: 5

Mihails Cubarovs, Henrik Pedersen, Hans Högberg, Vanya Darakchieva, Jensen Jens, Per Persson and Anne Henry
  CVD growth of sp2-hybridized boron nitride using aluminum nitride as buffer layer
  Physica Status Solidi. Rapid Research Letters, 2011, 5(10-11), 397-399.
   Fulltext  PDF  
 Web of Science® Times Cited: 7

A Blomqvist, Cecilia Århammar, Henrik Pedersen, Fredrik Silvearv, Susanne Norgren and R Ahuja
  Understanding the catalytic effects of H2S on CVD-growth of α-alumina: Thermodynamic gas-phase simulations and density functional theory
  Surface & Coatings Technology, 2011, 206(7), 1771-1779.
 Web of Science® Times Cited: 2

Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, Erik Janzén, J. Isoya, N. Morishita and T. Ohshima
  Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n-type 4H-SiC
  Journal of Applied Physics, 2011, 109(10), 103703.
   Fulltext  PDF  
 Web of Science® Times Cited: 1

Franziska Beyer, Carl Hemmingsson, Andreas Gällström, Stefano Leone, Henrik Pedersen, Anne Henry and Erik Janzén
  Deep levels in tungsten doped n-type 3C-SiC
  Applied Physics Letters, 2011, 98(15), 152104.
   Fulltext  PDF  
 Web of Science® Times Cited: 9

Stefano Leone, Franziska Beyer, Henrik Pedersen, Sven Andersson, Olle Kordina, Anne Henry and Erik Janzén
  Chlorinated precursor study in low temperature CVD of 4H-SiC
  Thin Solid Films, 2011, 519(10), 3074-3080.
 Web of Science® Times Cited: 10

Stefano Leone, Franziska Beyer, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén
  Growth of smooth 4H-SiC epilayers on 4° off-axis substrates with chloride-based CVD at very high growth rate
  Materials research bulletin, 2011, 46(8), 1272-1275.
 Web of Science® Times Cited: 8

Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, J Isoya, N Morishita, T Ohshima and Erik Janzén
  Bistable defects in low-energy electron irradiated n-type 4H-SiC
  PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2010, 4(8-9), 227-229.
 Web of Science® Times Cited: 3

Stefano Leone, Franziska Beyer, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén
  High growth rate of 4H-SiC epilayers grown on on-axis substrates with different chlorinated precursors
  Crystal Growth & Design, 2010, 10(12), 5334-5340.
 Web of Science® Times Cited: 14

Stefano Leone, Henrik Pedersen, Anne Henry, Olle Kordina and Erik Janzén
  Thick homoepitaxial layers grown on on-axis Si-face 6H- and 4H-SiC substrates with HCl addition
  Journal of Crystal Growth, 2009, 312(1), 24-32.
 Web of Science® Times Cited: 13

Patrick Carlsson, Nguyen Son Tien, Franziska Beyer, Henrik Pedersen, J Isoya, N Morishita, T Ohshima and Erik Janzén
  Deep levels in low-energy electron-irradiated 4H-SiC
  PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2009, 3(4), 121-123.
 Web of Science® Times Cited: 8

Henrik Pedersen, Franziska Beyer, Anne Henry and Erik Janzén
  Acceptor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD
  Journal of Crystal Growth, 2009, 311(13), 3364-3370.
 Web of Science® Times Cited: 12

Henrik Pedersen, Franziska Beyer, Jawad ul-Hassan, Anne Henry and Erik Janzén
  Donor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD
  Journal of Crystal Growth, 2009, 311(5), 1321-1327.
 Web of Science® Times Cited: 12

Stefano Leone, Henrik Pedersen, Anne Henry, Olle Kordina and Erik Janzén
  Improved morphology for epitaxial growth on 4° off-axis 4H-SiC substrates
  Journal of Crystal Growth, 2009, 311(12), 3265-3272.
 Web of Science® Times Cited: 23

Stefano Leone, Henrik Pedersen, Anne Henry, Olle Kordina and Erik Janzén
  Homoepitaxial growth of 4H-SiC on on-axis Si-face substrates using chloride-based CVD
  Materials Science Forum, 2009, 600-603, 107-110.
 Web of Science® Times Cited: 18

Henrik Pedersen, Stefano Leone, Anne Henry, Anders Lundskog and Erik Janzén
  Growth characteristics of chloride-based SiC epitaxial growth
  Physica status solidi (RRL) - Rapid Research Letters, 2008, 2(6), 278-280.
 Web of Science® Times Cited: 25

Henrik Pedersen, Stefano Leone, Anne Henry, Vanya Darakchieva, Patrick Carlsson, Andreas Gällström and Erik Janzén
  Very high crystalline quality of thick 4H-SiC epilayers grown from methyltrichlorosilane (MTS)
  Physica status solidi (RRL) - Rapid Research Letters, 2008, 2(4), 188-190.
 Web of Science® Times Cited: 17

Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Beyer, Vanya Darakchieva and Erik Janzén
  Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS)
  Journal of Crystal Growth, 2007, 307(2), 334-340.
 Web of Science® Times Cited: 58

Rafal Ciechonski, Anders Lundskog, Urban Forsberg, Anelia Kakanakova-Georgieva, Henrik Pedersen and Erik Janzén
  High 2DEG mobility of HEMT structures grown on 100 mm SI 4H-SiC substrates by hot-wall MOCVD
  Journal of Applied Physics, 2007, , .

Lars Ojamäe, Christian Aulin, Henrik Pedersen and Per-Olov Käll
  IR and quantum-chemical studies of carboxylic acid and glycine adsorption on rutile TiO2 nanoparticles
  Journal of Colloid and Interface Science, 2006, 296(1), 71-78.
 Web of Science® Times Cited: 92

Henrik Pedersen and Lars Ojamäe
  Towards Biocompatibility of RE2O3 Nanocrystals − Water and Organic Molecules Chemisorbed on Gd2O3 and Y2O3 Nanocrystals Studied by Quantum-Chemical Computations
  Nano letters (Print), 2006, 6(9), 2004-2008.
 Web of Science® Times Cited: 14

Maria Engström, Anna Klasson, Henrik Pedersen, Cecillia Vahlberg, Per-Olov Käll and Kajsa Uvdal
  High Proton Relaxivity for Gadolinium Oxide Nanoparticles
  Magnetic Resonance Materials in Physics, Biology and Medicine, 2006, 19(4), 180-186.
 Web of Science® Times Cited: 62

Fredrik Söderlind, Henrik Pedersen, Rodrigo M. Petoral, Per-Olov Käll and Kajsa Uvdal
  Synthesis and characterisation of Gd2O3 nanocrystals functionalised by organic acids
  Journal of Colloid and Interface Science, 2005, 288(1), 140-148.
 Web of Science® Times Cited: 93

Henrik Pedersen, Fredrik Söderlind, Rodrigo M. Petoral, Kajsa Uvdal, Per-Olov Käll and Lars Ojamäe
  Surface interactions between Y2O3 nanocrystals and organic molecules—an experimental and quantum-chemical study
  Surface Science, 2005, 592(1-3), 124-140.
 Web of Science® Times Cited: 24

Conference Articles

Milan Yazdanfar, Henrik Pedersen, Olle Kordina and Erik Janzén
  Effect of process parameters on dislocation density in thick 4H-SiC epitaxial layers grown by chloride-based CVD on 4 degrees off-axis substrates
  SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014.


  Fulltext PDF

Daniel Lundin and Henrik Pedersen
  High power pulsed plasma enhanced chemical vapor deposition: a brief overview of general concepts and early results
  NINETEENTH EUROPEAN CONFERENCE ON CHEMICAL VAPOR DEPOSITION (EUROCVD 19), 2013.


Milan Yazdanfar, Pontus Stenberg, Ian Don Booker, Ivan Gueorguiev Ivanov, Henrik Pedersen, Olle Kordina and Erik Janzén
  Morphology optimization of very thick 4H-SiC epitaxial layers
  SILICON CARBIDE AND RELATED MATERIALS 2012, 2013.


M. Chubarov, Henrik Pedersen, Hans Högberg, Stanislav Filippov, J.A. A. Engelbrecht, J. O'Connel and Anne Henry
  Characterization of Boron Nitride Thin Films
  2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR), 2013.


Milan Yazdanfar, Stefano Leone, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén
  Carrot defect control in chloride-based CVD through optimized ramp up conditions
  Materials Science Forum Vols 717 - 720, 2012.


 Web of Science® Times Cited: 4

Stefano Leone, Henrik Pedersen, Franziska Beyer, Sven Andersson, Olle Kordina, Anne Henry, Andrea Canino, Francesco La Via and Erik Janzén
  Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles
  Materials Science Forum Vols 717 - 720, 2012.


 Web of Science® Times Cited: 1

Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, Junichi Isoya, Norio Morishita, Takeshi Ohshima and Erik Janzén
  Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC
  <em>Materials Science Forum Vols. 679-680 (2011) pp 249-252</em>, 2011.


 Web of Science® Times Cited: 1

Stefano Leone, Yuan-Chih Lin, Franziska C. Beyer, Sven Andersson, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén
  Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates
  <em>Materials Science Forum Vols. 679-680 (2011) pp 59-62</em>, 2011.


 Web of Science® Times Cited: 6

Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, J. Isoya, N. Morishita, T. Ohshima and Erik Janzén
  Defects in low-energy electron-irradiated n-type 4H-SiC
  Physica Scripta, vol. T141, 2010.


Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, Junichi Isoya, Norio Morishita, Takeshi Ohshima and Erik Janzén
  Metastable defects in low-energy electron irradiated n-type 4H-SiC
  Materials Science Forum, Vols. 645-648, 2010.


 Web of Science® Times Cited: 1  Fulltext PDF

Anne Henry, Stefano Leone, Henrik Pedersen, Olle Kordina and Erik Janzén
  Growth of 4H-SiC Epitaxial Layers on 4° Off-axis Si-face substrates
  Materials Science Forum, Vols. 615-617, 2009.


Franziska Beyer, Henrik Pedersen, Anne Henry and Erik Janzén
  Defects in 4H-SiC Layers Grown by Chloride-based Epitaxy
  Materials Science Forum Vols. 615-617, 2009.


 Web of Science® Times Cited: 3

Patrick Carlsson, Son Tien Nguyen, Henrik Pedersen, J. Isoya, N. Morishita, T. Ohshima, H. Itoh and Erik Janzén
  Photo-EPR Studies on Low-Energy Electron-irradiated 4H-SiC
  Materials Science Forum, Vols. 615-617, 2009.


Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Beyer, Anders Lundskog and Erik Janzén
  Chloride-based SiC epitaxial growth
  Materials Science Forum Vols. 615-617, 2009.


 Web of Science® Times Cited: 1

Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Beyer, Vanya Darakchieva and Erik Janzén
  Very high growth rate of 4H-SiC using MTS as chloride-based precursor
  Materials Science Forum, Vol. 600-603, 2009.


 Web of Science® Times Cited: 4

Stefano Leone, Henrik Pedersen, Anne Henry, S. Rao, Olle Kordina and Erik Janzén
  Growth of Thick 4H-SiC Epitaxial Layers on On-axis Si-Face Substrates with HCl Addition
  Materials Science Forum, Vols. 615-617, 2009.


 Web of Science® Times Cited: 6

Henrik Pedersen, Stefano Leone, Anne Henry, Vanya Darakchieva and Erik Janzén
  Very high epitaxial growth rate of SiC using MTS as chloride-based precursor
  Surface and Coatings Technology, Volume 201, Issue 22-23 SPEC. ISS., 2007.


 Web of Science® Times Cited: 9

Henrik Pedersen, Anne Henry, Jawad ul-Hassan, Peder Bergman and Erik Janzén
  Growth and Photoluminescence study of Aluminium doped SiC epitaxial layers
  Materials Science Forum, Vols. 556-557, 2007.


 Web of Science® Times Cited: 1

Anne Henry, Jawad ul-Hassan, Henrik Pedersen, Franziska Beyer, Peder Bergman, Sven Andersson, Erik Janzén and P. Godignon
  Thick epilayers for power devices
  Materials Science Forum, vol. 556-557, 2007.


 Web of Science® Times Cited: 8

Jawad ul-Hassan, Peder Bergman, Anne Henry, Henrik Pedersen, P. J. McNally and Erik Janzén
  4H-SiC Epitaxial Layers Grown on on-axis Si-face Substrate
  Materials Science Forum, Vols. 556-557, 2007.


 Web of Science® Times Cited: 8

Anna Klasson, Maria Engström, Henrik Pedersen, Per-Olov Käll and Kajsa Uvdal
  Cell tracking with novel contrast agents fromed by gadolinium oxide nanoparticels
  ESMRMB,2005, 2005.


Per-Olov Käll, Lars Ojamäe, Henrik Pedersen, Fredrik Söderlind, Rodrigo Jr Petoral, Kajsa Uvdal, H. Zhang and X. Zouc
  Synthesis, Characterisation and Molecular Functionalisation of Gd2O3 Nanocrystals
  NAN:-8,2004, 2004.


Ph.D. Theses

Henrik Pedersen
  Chloride-based Silicon Carbide CVD
  2008.


  Fulltext PDF

Licentiate Theses

Henrik Pedersen
  Experimental and quantum-chemical studies of the surface interactions between organic molecules and nanocrystals of (a) RE2O3 (RE = Y or Gd); and (b) TiOb2
  2005.


* Social media data based on publications from 2011 to present and with a DOI; data delivered by Altmetric.com.