Publications for Henrik Larsson
Co-author map based on ISI articles 2007-

Keywords

virtually vertical thick substrates strain sapphire quality positron photoluminescence hydride hvpe high-quality gan free-standing epitaxy defects crystalline bulk-like annihilation 0

Journal Articles

M. Misheva, Henrik Larsson, Daniela Gogova and Bo Monemar
  Positron annihilation study of HVPE grown thick GaN layers
  Physica status solidi. A, Applied research, 2005, 202(5), 713-717.
 Web of Science® Times Cited: 6

Bo Monemar, Henrik Larsson, Carl Hemmingsson, Ivan Gueorguiev Ivanov and Daniela Gogova
  Growth of thick GaN layers with hydride vapour phase epitaxy
  Journal of Crystal Growth, 2005, 281(1), 17-31.
 Web of Science® Times Cited: 41

A. Kasic, D. Gogova, Henrik Larsson, Ivan Gueorguiev Ivanov, Jens Birch, Bo Monemar, M. Fehrer and V. Härle
  Highly homogeneous bulk-like 2'' GaN grown by HVPE on MOCVD-GaN template
  Journal of Crystal Growth, 2005, 275, e387-e393.
 Web of Science® Times Cited: 5

Daniela Gogova, Henrik Larsson, A. Kasic, Gholam Reza Yazdi, Ivan Gueorguiev Ivanov, Rositsa Yakimova, Bo Monemar, E. Aujol, E. Frayssinet, J-P. Faurie, B. Beaumont and P. Gibart
  High-Quality 2'' Bulk-Like Free-Standing GaN Grown by HydrideVapour Phase Epitaxy on a Si-doped Metal Organic Vapour Phase Epitaxial GaN Template with an Ultra Low Dislocation Density
  Japanese Journal of Applied Physics, 2005, 44, 1181-1185.
 Web of Science® Times Cited: 13

A. Kasic, Daniela Gogova, Henrik Larsson, Carl Hemmingsson, Ivan Gueorguiev Ivanov, Rositsa Yakimova, Bo Monemar and M. Heuken
  Characterization of crack-free relaxed GaN grown on 2″ sapphire
  Journal of Applied Physics, 2005, 98(7), 73525.
 Web of Science® Times Cited: 4

Daniela Gogova, A. Kasic, Henrik Larsson, B. Pécz, Rositsa Yakimova, Ivan Gueorguiev Ivanov and Bo Monemar
  Characterization of high-quality free-standing GaN grown by HVPE
  Physica Scripta, 2004, T114, 18-21.
 Web of Science® Times Cited: 2

Daniela Gogova, A Kasic, Henrik Larsson, B Pecz, Rositsa Yakimova, Björn Magnusson, Bo Monemar, F Tuomisto, K Saarinen, C Miskys, M Stutzmann, C Bundesmann and M Schubert
  Optical and structural characteristics of virtually unstrained bulk-like GaN
  Japanese Journal of Applied Physics, 2004, 43(4A), 1264-1268.
 Web of Science® Times Cited: 20

A. Kasic, Daniela Gogova, Henrik Larsson, Carl Hemmingsson, Ivan Gueorguiev Ivanov, Bo Monemar, C. Bundesmann and M. Schubert
  Micro-Raman scattering profiling studies on HVPE-grown free-standing GaN
  Physica status solidi. A, Applied research, 2004, 201(12), 2773-2776.
 Web of Science® Times Cited: 7

Daniela Gogova, A. Kasic, Henrik Larsson, Carl Hemmingsson, Bo Monemar, F. Tuomisto, K. Saarinen, L. Dobos, B. Pécz, P. Gibart and B. Beaumont
  Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template
  Journal of Applied Physics, 2004, 96(1), 799-806.
 Web of Science® Times Cited: 39

Daniela Gogova, Henrik Larsson, Rositsa Yakimova, Z. Zolnai, Ivan Gueorguiev Ivanov and Bo Monemar
  Fast growth of high quality GaN
  Physica status solidi. A, Applied research, 2003, 200(1), 13-17.
 Web of Science® Times Cited: 16

Henrik Larsson, Daniela Gogova, A. Kasic, Rositsa Yakimova, Bo Monemar, C. R. Miskys and M. Stutzmann
  Free-standing HVPE-GaN Layers
  Physica Status Solidi. C, Current topics in solid state physics, 2003, 0(7), 1985-1988.

Ph.D. Theses

Henrik Larsson
  Growth of thick GaN layers on sapphire by Hydride Vapour Phase Epitaxy
  2005.