Publications for Henrik Jacobson
Co-author map based on ISI articles 2007-

Journal Articles

Xun Li, Henrik Jacobson, Alexandre Boulle, Didier Chaussende and Anne Henry
  Double-Position-Boundaries Free 3C-SiC Epitaxial Layers Grown on On-Axis 4H-SiC
  ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2014, 3(4), P75-P81.

Rositsa Yakimova, Mikael Syväjärvi, Tihomir Iakimov, Henrik Jacobsson, R Raback, A Vehanen and Erik Janzén
  Polytype stability in seeded sublimation growth of 4H-SiC boules
  Journal of Crystal Growth, 2000, 217(3), 255-262.
 Web of Science® Times Cited: 37

Mikael Syväjärvi, Rositsa Yakimova, Henrik Jacobsson and Erik Janzén
  Structural improvement in sublimation epitaxy of 4H-SiC
  Journal of Applied Physics, 2000, 88(3), 1407-1411.
 Web of Science® Times Cited: 36

Chapters in Books

Rositsa Yakimova, Mikael Syväjärvi, Henrik Jacobson and Erik Janzén
  Some aspects of extended defects formation and their reduction in silicon carbide crystals
  Recent research developments in materials science & engineering. Vol. 1, pt. 1, Trans Research Network, 2003, 619-646.


Conference Articles

Henrik Jacobson, Xun Li, Erik Janzén and Anne Henry
  Structural investigation of heteroepitaxial 3C-SiC grown on 4H-SiC substrates
  SILICON CARBIDE AND RELATED MATERIALS 2012, 2013.


S.M. Bishop, E.A. Preble, Christer Hallin, Anne Henry, W. Sarney, H.-R. Chang, Liutauras Storasta, Henrik Jacobson, Z.J. Reitmeier, B.P. Wagner, Erik Janzén and R.F. Davis
  Characterization and comparison of 4H-SiC(112 over-bar 0) and 4H-SiC(0001) 8° off-axis substrates and homoepitaxial films
  Materials Research Society Symposium Proceedings, Vol. 815 Silicon Carbide 2004 - Materials, Processing and Devices,2004, 2004.


S.M. Bishop, E.A. Preble, Christer Hallin, Anne Henry, Liutauras Storasta, Henrik Jacobson, B.P. Wagner, Z.J. Reitmeier, Erik Janzén and R.F. Davis
  Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization
  Materials Science Forum, Vols. 457-460, 2004.


 Web of Science® Times Cited: 2

Henrik Jacobsson, Rositsa Yakimova, Mikael Syväjärvi, Jens Birch, T Tuomi and Erik Janzén
  High-resolution XRD evaluation of thick 4H-SiC epitaxial layers
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 5

Mikael Syväjärvi, Rositsa Yakimova, Henrik Jacobsson and Erik Janzén
  Growth of 3C-SiC using off-oriented 6H-SiC substrates
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 8

Rositsa Yakimova, Mikael Syväjärvi, Tihomir Iakimov, Henrik Jacobsson, Anelia Kakanakova-Georgieva, P. Raback and Erik Janzén
  Growth of silicon carbide: Process-related defects
  Appl. Surf. Sci., Vol. 184, 2001.


 Web of Science® Times Cited: 11

Mikael Syväjärvi, Rositsa Yakimova, Henrik Jacobsson, MK Linnarsson, Anne Henry and Erik Janzén
  High growth rate epitaxy of thick 4H-SiC layers
  Materials Science Forum, Vols. 338-342, 2000.


 Web of Science® Times Cited: 6