Publications for Hamid Harati Zadeh
Co-author map based on ISI articles 2007-

Keywords

width wells undoped temperature spectra si sample qws quantum pl photoluminescence peak mqws ganalgan fields doping doped decay composition al

Journal Articles

M. Sabooni, M. Esmaeili, Hamid Harati Zadeh, Bo Monemar, Plamen Paskov, Per-Olof Holtz, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Exciton localization behaviour in different well width undoped GaN/Al 0.07Ga0.93N nanostructures
  , 2007, , .
 Web of Science® Times Cited: 4

M. Esmaeili, Hamid Harati Zadeh, Bo Monemar, Plamen Paskov, Per-Olof Holtz, Peder Bergman, M. Iwaya, S. Kamiyama, H. Amano and I Akasaki
  Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: Influence of Al composition and Si doping
  Nanotechnology, 2007, 18(2), .
 Web of Science® Times Cited: 7

Hamid Harati Zadeh, Bo Monemar, Plamen Paskov, Per-Olof Holtz, E Valcheva, M Iwaya, S Kamiyama, H Amano and I Akasaki
  Optical observation of discrete well width fluctuations in wide band gap III-nitride quantum wells
  Physica status solidi. B, Basic research, 2007, 244(5), 1727-1734.
 Web of Science® Times Cited: 5

B. Arnaudov, Plamen Paskov, Hamid Harati Zadeh, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Radiative recombination mechanism in highly modulation doped GaN/AlGaN multiple quantum wells
  Physica Status Solidi. C, Current topics in solid state physics, 2006, 6, 1888-1891.
 Web of Science® Times Cited: 4

Hamid Harati Zadeh, Bo Monemar, Plamen Paskov, Peder Bergman, Bo Sernelius, Per-Olof Holtz, M Iwaya, S Kamiyama, H Amano and I Akasaki
  Photoluminescence study of Si-doped GaN/Al0.07Ga0.93N multiple quantum wells with different dopant position
  Applied Physics Letters, 2004, 84(25), 5071-5073.
 Web of Science® Times Cited: 10

Bo Monemar, Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Peder Bergman, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum well structures
  Physica status solidi. B, Basic research, 2003, 237(1), 353-364.
 Web of Science® Times Cited: 22

Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Effect of n-type modulation doping on the photoluminescence of GaN/Al0.07Ga0.93N multiple quantum wells
  Applied Physics Letters, 2002, 80(8), 1373.
 Web of Science® Times Cited: 15

Conference Articles

Hamid Harati Zadeh, Bo Monemar, Plamen Paskov, Per-Olof Holtz, Peder Bergman, H. Amano and I. Akasaki
  Optical Studies of Wide Band Gap III-Nitride Semiconductor Quantum Wells and Superlattices
  European Materials Research Society E-MRS fall meeting 2006,2006, 2006.


Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Photoluminescence study of Si doped GaN/AlGaN multi quantum wells
  ICPS 2002,2002, 2003.


Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  The influence of Si-donor doping on the exciton localization in modulation- doped GaN/AlGaN multi quantum wells
  14th Indium Phosphide and Related Materials Conference IPRM 2002,2002, 2002.


Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Photoluminescence study of Si doped GaN/GaN/Al0.07Ga0.93N multi quantum wells
  NANO-7/ECOSS-21,2002, 2002.