Publications for Hamid Harati Zadeh
Co-author map based on ISI articles 2007-

Keywords

width wells undoped temperature spectra si qws quantum pl photoluminescence peak gan/algan fields emission doping doped decay composition al (pl)

Journal Articles

Hamid Harati Zadeh, Bo Monemar, Plamen Paskov, Per-Olof Holtz, E Valcheva, M Iwaya, S Kamiyama, H Amano and I Akasaki
  Optical observation of discrete well width fluctuations in wide band gap III-nitride quantum wells
  Physica status solidi. B, Basic research, 2007, 244(5), 1727-1734.
 Web of Science® Times Cited: 4

M. Sabooni, M. Esmaeili, Hamid Harati Zadeh, Bo Monemar, Plamen Paskov, Per-Olof Holtz, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Exciton localization behaviour in different well width undoped GaN/Al 0.07Ga0.93N nanostructures
  , 2007, , .
 Web of Science® Times Cited: 4

M. Esmaeili, Hamid Harati Zadeh, Bo Monemar, Plamen Paskov, Per-Olof Holtz, Peder Bergman, M. Iwaya, S. Kamiyama, H. Amano and I Akasaki
  Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: Influence of Al composition and Si doping
  Nanotechnology, 2007, 18(2), .
 Web of Science® Times Cited: 7

B. Arnaudov, Plamen Paskov, Hamid Harati Zadeh, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Radiative recombination mechanism in highly modulation doped GaN/AlGaN multiple quantum wells
  Physica Status Solidi. C, Current topics in solid state physics, 2006, 6, 1888-1891.
 Web of Science® Times Cited: 4

Hamid Harati Zadeh, Bo Monemar, Plamen Paskov, Peder Bergman, Bo Sernelius, Per-Olof Holtz, M Iwaya, S Kamiyama, H Amano and I Akasaki
  Photoluminescence study of Si-doped GaN/Al0.07Ga0.93N multiple quantum wells with different dopant position
  Applied Physics Letters, 2004, 84(25), 5071-5073.
 Web of Science® Times Cited: 10

Bo Monemar, Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Peder Bergman, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum well structures
  Physica status solidi. B, Basic research, 2003, 237(1), 353-364.
 Web of Science® Times Cited: 22

Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Effect of n-type modulation doping on the photoluminescence of GaN/Al0.07Ga0.93N multiple quantum wells
  Applied Physics Letters, 2002, 80(8), 1373.
 Web of Science® Times Cited: 15

Conference Articles

Hamid Harati Zadeh, Bo Monemar, Plamen Paskov, Per-Olof Holtz, Peder Bergman, H. Amano and I. Akasaki
  Optical Studies of Wide Band Gap III-Nitride Semiconductor Quantum Wells and Superlattices
  European Materials Research Society E-MRS fall meeting 2006,2006, 2006.


Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Photoluminescence study of Si doped GaN/AlGaN multi quantum wells
  ICPS 2002,2002, 2003.


Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Photoluminescence study of Si doped GaN/GaN/Al0.07Ga0.93N multi quantum wells
  NANO-7/ECOSS-21,2002, 2002.


Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  The influence of Si-donor doping on the exciton localization in modulation- doped GaN/AlGaN multi quantum wells
  14th Indium Phosphide and Related Materials Conference IPRM 2002,2002, 2002.