Publications for Göran Hansson
Co-author map based on ISI articles 2007-

Keywords

× tunneling temperatures temperature stm spectroscopy spatially si rest quantum photoluminescence oxygen microscopy islands intensity ge epitaxy emission bias beam

Journal Articles

Bouchaib Adnane, Fredrik Karlsson, Göran Hansson, Per-Olof Holtz and Wei-Xin Ni
  Spatially direct and indirect transitions of self-assembled SiGe/Si quantum dots studied by photoluminescence excitation spectroscopy
  Applied Physics Letters, 2010, 96(18), 181107.
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 Web of Science® Times Cited: 9

Bouchaib Adnane, Fredrik Karlsson, Ming Zhao, Göran Hansson, Per-Olof Holtz and Wei-Xin Ni
  Origin of photoresponse at 8-14 μm in stacks of self-assembled SiGe/Si quantum dots
  Physical Review B. Condensed Matter and Materials Physics, 2009, , .

Ivy Razado, Jiangping He, Hanmin Zhang, Göran Hansson and Roger Uhrberg
  Electronic structure of Ge(111)c(2x8): STM, angle-resolved photoemission, and theory
  PHYSICAL REVIEW B, 2009, 79(20), 205410.
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 Web of Science® Times Cited: 8

Ming Zhao, Göran Hansson and Wei-Xin Ni
  Strain relaxation of thin Si0.6Ge0.4 grown with low-temperature buffers by molecular beam epitaxy
  JOURNAL OF APPLIED PHYSICS, 2009, 105(6), 063502.
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 Web of Science® Times Cited: 3

Hanmin Zhang, K. Sakamoto, Göran Hansson and Roger Uhrberg
  High-temperature annealing and surface photovoltage shifts on Si(111)7×7
  Physical Review B. Condensed Matter and Materials Physics, 2008, 78(3), 035318.
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 Web of Science® Times Cited: 9

Amir Karim, Göran V. Hansson and M. K. Linnarsson
  Influence of Er and O concentrations on the microstructure and luminescence of Si:Er/O LEDs
  Journal of Physics, Conference Series, 2008, 100(042010), .
 Web of Science® Times Cited: 2

Amir Karim, Chun-Xia Du and Göran Hansson
  Influence of exposure to 980 nm laser radiation on the luminescence of Si: Er/O light-emitting diodes
  JOURNAL OF APPLIED PHYSICS, 2008, 104(12), 123110.
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 Web of Science® Times Cited: 1

Ming Zhao, Amir Karim, Göran Hansson, Wei-Xin Ni, P Townsend, S A Lynch and D J Paul
  Molecular beam epitaxy growth of Si/SiGe bound-to-continuum quantum cascade structures for THz emission
  Thin Solid Films, 2008, 517(1), 34-37.
 Web of Science® Times Cited: 1

P.F. Gomes, F. Iikawa, F. Cerdeira, Mats Larsson, Anders Elfving, Göran Hansson, Wei-Xin Ni and Per-Olof Holtz
  Type-I optical emissions in GeSi quantum dots
  Applied Physics Letters, 2007, 91(5), .
 Web of Science® Times Cited: 3

Jiangping He, Göran Hansson and Roger Uhrberg
  Atomic structure of the carbon induced Si(001)c(4x4) surface
  Applied Surface Science, 2006, 252, 5284-5287.
 Web of Science® Times Cited: 1

Ivy Razado-Colambo, Hanmin M. Zhang, Göran Hansson and Roger Uhrberg
  Hydrogen-induced metallization on Ge(1 1 1) c(2 × 8)
  Applied Surface Science, 2006, 252(15), 5300-5303.
 Web of Science® Times Cited: 2

Anders Elfving, Amir Karim, Göran V. Hansson and Wei-Xin Ni
  Three-terminal Ge dot/SiGe quantum-well photodetectors for near-infrared light detection
  Applied Physics Letters, 2006, 89, 083510-083513.
 Web of Science® Times Cited: 6

Anders Elfving, Ming Zhao, Göran V. Hansson and Wei-Xin Ni
  Asymmetric relaxation of SiGe/Si(110) investigated by high-resolution x-ray diffraction reciprocal space mapping
  Applied physics letters, 2006, 89, 181901-1--181901-3.
 Web of Science® Times Cited: 9

Mats Larsson, Anders Elfving, Wei-Xin Ni, Göran V. Hansson and Per-Olof Holtz
  Growth-temperature-dependent band alignment in Si/Ge quantum dots from photoluminescence spectroscopy
  Physical Review B, 2006, 73(19), 195319-1--195319-7.
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 Web of Science® Times Cited: 22

Ivy Razado-Colambo, Hanmin M. Zhang, Roger I. G. Uhrberg and Göran V. Hansson
  STM study of site selective hydrogen adsorption on Si(111) 7×7
  Physical Review B. Condensed Matter and Materials Physics, 2005, 71(23), 235411.
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 Web of Science® Times Cited: 8

Amir Karim, G. V. Hansson, Wei-Xin Ni, Per-Olof Holtz, Mats Larsson and H.A. Atwater
  Photoluminescence Studies of Sn Quantum Dots in Si Grown by MBE
  Optical materials (Amsterdam), 2005, 27(5), 836-840.
 Web of Science® Times Cited: 7

Mats Larsson, Per-Olof Holtz, Anders Elfving, Göran Hansson and Wei-Xin Ni
  Reversed quantum-confined Stark effect and an asymmetric band alignment observed for type-II Si∕Ge quantum dots
  Physical Review B, 2005, 71(11), 113301.
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 Web of Science® Times Cited: 5

Hanmin Zhang, S.T. Jemander, N. Lin, Göran Hansson and Roger Uhrberg
  Origin of 3 × 3 diffraction on the Sn1-xSix/Si(1 1 1) v3 × v3 surface
  Surface Science, 2003, 531(1), 21-28.
 Web of Science® Times Cited: 5

Mats Larsson, Anders Elfving, Per-Olof Holtz, Göran Hansson and Wei-Xin Ni
  Photoluminescence study of Si/Ge quantum dots
  Surface Science, 2003, 532-535, 832-836.
 Web of Science® Times Cited: 15

Mats Larsson, Anders Elfving, Per-Olof Holtz, Göran Hansson and Wei-Xin Ni
  Luminescence study of Si/Ge quantum dots
  Physica. E, Low-Dimensional systems and nanostructures, 2003, 16(3-4), 476-480.
 Web of Science® Times Cited: 7

Anders Elfving, Göran V. Hansson and Wei-Xin Ni
  SiGe (Ge-dot) heterojunction phototransistors for efficient light detection at 1.3-1.55 µm
  Physica E: Low-dimensional Systems and Nanostructures, 2003, 16(3-4), 528-532.
 Web of Science® Times Cited: 18

Mats Larsson, Anders Elfving, Per-Olof Holtz, Göran Hansson and Wei-Xin Ni
  Spatially direct and indirect transitions observed for Si/Ge quantum dots
  Applied Physics Letters, 2003, 82(26), 4785-4787.
 Web of Science® Times Cited: 30

Kazuyuki Sakamoto, S. Torbjörn Jemander, Göran Hansson and Roger Uhrberg
  Bias-dependent scanning tunneling microscopy study of the oxygen-adsorbed Si(111)-(7×7) surface: Observation of metastable molecular oxygen
  Physical Review B. Condensed Matter and Materials Physics, 2002, 65(15), 155305.
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 Web of Science® Times Cited: 17

S.T. Jemander, Hanmin Zhang, Roger Uhrberg and Göran Hansson
  STM study of the C-induced Si(100)-c(4×4) reconstruction
  Physical Review B. Condensed Matter and Materials Physics, 2002, 65(11), 115321.
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 Web of Science® Times Cited: 19

Chun-Xia Du, Fabrice Duteil, Göran Hansson and Wei-Xin Ni
  Si/SiGe/Si : Er : O light-emitting transistors prepared by differential molecular-beam epitaxy
  Applied Physics Letters, 2001, 78(12), 1697-1699.
 Web of Science® Times Cited: 7

PO Nilsson, S Mankefors, J Guo, J Nordgren, D Debowska-Nilsson, Wei-Xin Ni and Göran Hansson
  Electronic structure of ultrathin Ge layers buried in Si(100)
  Physical Review B. Condensed Matter and Materials Physics, 2001, 64(11), .
 Web of Science® Times Cited: 4

K. Sakamoto, M. Hirano, H. Takeda, S.T. Jemander, I. Matsuda, K. Amemiya, T. Ohta, W. Uchida, Göran Hansson and Roger Uhrberg
  Interaction of metastable molecular oxygen with the dangling bonds of a Si(111)-(7×7) surface
  Journal of Electron Spectroscopy and Related Phenomena, 2001, 114-116, 489-494.
 Web of Science® Times Cited: 1

S.T. Jemander, N. Lin, Hanmin Zhang, Roger Uhrberg and Göran Hansson
  STM study of the surface defects of the (v3×v3)-Sn/Si(1 1 1) surface
  Surface Science, 2001, 475(1-3), 181-193.
 Web of Science® Times Cited: 19

Chun-Xia Du, F. Duteil, Göran Hansson and Wei-Xin Ni
  Si/SiGe/Si: Er
  Applied Physics Letters, 2001, 78(12), 1697-1699.

Göran Hansson, Wei-Xin Ni, Chun-Xia Du, Anders Elfving and F. Duteil
  Origin of abnormal temperature dependence of electroluminescence from Er/O-doped Si diodes
  Applied Physics Letters, 2001, 78(15), 2104-2106.
 Web of Science® Times Cited: 22

Chun-Xia Du, F. Duteil, Göran Hansson and Wei-Xin Ni
  Efficient 1.54 µm light emission from Si/SiGe/Si: Er
  Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, 2001, 81(1-3), 105-108.
 Web of Science® Times Cited: 1

I.K. Robinson, P.O. Nilsson, D. Debowska-Nilsson, Wei-Xin Ni and Göran Hansson
  Resonant scattering in delta-doped heterostructures
  Applied Physics Letters, 2001, 79(18), 2913-2915.
 Web of Science® Times Cited: 5

K. Robbie, S.T. Jemander, N. Lin, C. Hallin, Ragnar Erlandsson, Göran Hansson and L.D. Madsen
  Formation of Ni-graphite intercalation compounds on SiC
  Physical review. B, Condensed matter and materials physics, 2001, 64, 155401-15540111.
 Web of Science® Times Cited: 11

Chun-Xia Du, Wei-Xin Ni, KB Joelsson, F Duteil and Göran Hansson
  Electroluminescence studies of Er and SiO co-doped Si layers prepared by molecular beam epitaxy
  Optical materials (Amsterdam), 2000, 14(3), 259-265.
 Web of Science® Times Cited: 11

K Robbie, ST Jemander, N Lin, Christer Hallin, Ragnar Erlandsson, Göran Hansson and LD Madsen
  Study of contact formation by high temperature deposition of Ni on SiC
  Materials Science Forum, 2000, 338-3, 981-984.
 Web of Science® Times Cited: 7

Wei-Xin Ni, Chun-Xia Du, F. Duteil, Galia Pozina and Göran Hansson
  Light emitting SiGe/i-Si/Si: Er
  Thin Solid Films, 2000, 369(1), 414-418.
 Web of Science® Times Cited: 6

Roger Uhrberg, Hanmin Zhang, T. Balasubramanian, S.T. Jemander, N. Lin and Göran Hansson
  Electronic structure of Sn/Si(111) √3×√3: Indications of a low-temperature phase
  Physical Review B. Condensed Matter and Materials Physics, 2000, 62(12), 8082-8086.
   Fulltext  PDF  
 Web of Science® Times Cited: 46

F. Duteil, Chun-Xia Du, K.B. Joelsson, Per Persson, Lars Hultman, Galia Pozina, Wei-Xin Ni and Göran Hansson
  Luminescence and microstructure of Er/O co-doped Si structures grown by MBE using Er and SiO evaporation
  Materials Science in Semiconductor Processing, 2000, 3(5-6), 523-528.
 Web of Science® Times Cited: 6

Göran Hansson
  Solid state multiple-beam laser with tunable wavelength difference between beams
  Optical Engineering: The Journal of SPIE, 2000, 39(10), 2700-2704.

EB Svedberg, TS Jemander, N Lin, Ragnar Erlandsson, Göran Hansson, Jens Birch and JE Sundgren
  Epitaxial growth of UHV magnetron sputtered Mo thin films on MgO(001) substrates, oxygen segregation and surface reconstructions
  Surface Science, 1999, 443(1-2), 31-43.

Conference Articles

P F Gomes, F Cerdeira, Mats Larsson, Anders Elfving, Göran Hansson, Wei-Xin Ni, Per-Olof Holtz, J R Madureira and A García-Cristóbal
  Large optical emission blue shift in Ge/Si quantum dots under external biaxial strain
  ICPS 29th International Conference on the Physics of Semiconductors,2008, 2008.


P.F. Gomes, P.F. Gomes, F. Iikawa, F. Iikawa, F. Cerdeira, F. Cerdeira, Mats Larsson, Mats Larsson, Anders Elfving, Anders Elfving, Göran Hansson, Göran Hansson, Wei-Xin Ni, Wei-Xin Ni, Per-Olof Holtz and Per-Olof Holtz
  Size dependent spatial direct and indirect transitions in Ge/Si QDs
  The 6th International Conference on Low Dimensional Structures and Devices,2007, 2007.


Amir Karim, Anders Elfving, Mats Larsson, Wei-Xin Ni and G. V. Hansson
  Compositional analysis of Si/SiGe quantum dots using STEM and EDX
  Volume 6129 - Quantum Dots, Particles, and Nanoclusters III, Proceedings of SPIE, 2006.


Mats Larsson, Anders Elfving, Per-Olof Holtz, Wei-Xin Ni and Göran Hansson
  Band alignment studies of self-organized Ge/Si quantum dots based on luminescence characterization
  The 23rd International Conference on Defects in Semiconductors,2005, 2005.


Mats Larsson, Anders Elfving, Per-Olof Holtz, Wei-Xin Ni and Göran Hansson
  Band alignment studies of self-organized Ge/Si quantum dots based on luminescence characterization
  The 9th Conference on Optics and Excitons in Confined Systems,2005, 2005.


Mats Larsson, Anders Elfving, Per-Olof Holtz, Göran Hansson and Wei-Xin Ni
  Asymmetric band alignment at Si/Ge quantum dots studied by luminescence from p-i-n and n-i-p structures
  ICPS2004,2004, 2005.


Amir Karim, Wei-Xin Ni, Anders Elfving, Per O.Å Persson and Göran Hansson
  Characterization of Er/O-doped Si-LEDs with low thermal quenching
  Material Research Society Symposium Proceedings, 2005.


Wei-Xin Ni, Anders Elfving, Mats Larsson, Göran Hansson and Per-Olof Holtz
  Si-based Photonic Transistor Devices for Integrated Optoelectronics
  The 3rd International Conference on SiGe Epitaxy and Heterostructures,2003, 2003.


Anders Elfving, Mats Larsson, Per-Olof Holtz, Göran V. Hansson and Wei-Xin Ni
  Efficient near infrared Si/Ge quantum dot photodetector based on a heterojunction bipolar transistor
  Material Research Society Symposium Proceedings, 2003.


Anders Elfving, Göran. V. Hansson and Wei-Xin Ni
  Infrared photodetectors based on a Ge-dot/SiGe-well field effect transistor structure
  Electrochemical Society Proceedings, SiGe: Materials, Processing, and Devices, 2003.


E. Haq, Wei-Xin Ni and Göran Hansson
  Growth of relaxed Si1-xGex layers using an oxygen doped Si(O) compliant layer
  , 2002.


S.T. Jemander, Hanmin Zhang, Roger Uhrberg and Göran Hansson
  Surface structure of Si(100) with submonolayer coverages of C
  , 2002.


 Web of Science® Times Cited: 12

Y.-H. Wu, C.-Y. Wang, Anders Elfving, Göran Hansson and Wei-Xin Ni
  Surface diffusion limited nucleation of Ge dots on the Si(001) surface
  , 2002.


 Web of Science® Times Cited: 1

Wei-Xin Ni, Chun-Xia Du, F. Duteil, Anders Elfving and Göran Hansson
  1.54 µm light emitting devices based on Er/O-doped Si layered structures grown by molecular beam epitaxy
  Optical materials (Amsterdam), 2001.


 Web of Science® Times Cited: 2

F. Duteil, Chun-Xia Du, K. Jarrendahl, Wei-Xin Ni and Göran Hansson
  Er/O doped Si1-xGex alloy layers grown by MBE
  Optical materials (Amsterdam), 2001.


 Web of Science® Times Cited: 1

Ph.D. Theses

Bouchaib Adnane
  Optical characterization of Silicon-based self-assembled nanostructures
  2010.


Ivy Razado-Colambo
  Scanning Tunneling Microscopy and Photoelectron Spectroscopy Studies of Si(111) and Ge(111) Surfaces: Clean and Modified by H or Sn Atoms
  2009.


  Fulltext PDF

Amir Karim
  Si-based structures for light emission and detection
  2008.


  Fulltext PDF

Ming Zhao
  Growth and Characterization of Strain-engineered Si/SiGe Heterostructures Prepared by Molecular Beam Epitaxy
  2008.


  Fulltext PDF