Publications for Galia Pozina
Co-author map based on ISI articles 2007-

Publications mentioned in social media 2 times*

Keywords

wells vapor temperature spectra recombination quantum pl photoluminescence p>we optical gan excitons exciton ev epitaxy energy emission decay bulk bound

Journal Articles

M. A. Kaliteevski, K. A. Ivanov, Galia Pozina and A. J. Gallant
  Single and double bosonic stimulation of THz emission in polaritonic systems
  Scientific Reports, 2014, 4(5444), .
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Wondwosen Metaferia, Apurba Dev, Himanshu Kataria, Carl Junesand, Yan-Ting Sun, Srinivasan Anand, Juha Tommila, Galia Pozina, Lars Hultman, Mircea Guina, Tapio Niemi and Sebastian Lourdudoss
  High quality InP nanopyramidal frusta on Si
  CrysteEngComm, 2014, 16(21), 4624-4632.

Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, Sergey Khromov, V. N. Izyumskaya, V. Avrutin, X. Li, H. Morkoc, H. Amano, M. Iwaya and I. Akasaki
  Properties of the main Mg-related acceptors in GaN from optical and structural studies
  Journal of Applied Physics, 2014, 115(5), 053507.
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 Web of Science® Times Cited: 1

Carl Junesand, Ming-Horn Gau, Yan-Ting Sun, Sebastian Lourdudoss, Ikai Lo, Juan Jimenez, Pablo Aitor Postigo, Fransisco M. Morales, Jesus Hernandez, Sergio Molina, Aouni Abdessamad, Galia Pozina, Lars Hultman and Pirouz Pirouz
  Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth
  MATERIALS EXPRESS, 2014, 4(1), 41-53.

Mazhar Ali Abbasi, Zafar Hussain Ibupoto, Mushtaque Hussain, Galia Pozina, Jun Lu, Lars Hultman, Omer Nur and Magnus Willander
  Decoration of ZnO nanorods with coral reefs like NiO nanostructures by the hydrothermal growth method and their luminescence study
  Materials, 2014, 7(1), 430-440.
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Sergey Khromov, D. Gregorius, R. Schiller, J. Lösch, M. Wahl, M. Kopnarski, A. Amano, Bo Monemar, Lars Hultman and Galia Pozina
  Atom probe tomography study of Mg doped GaN layers
  Nanotechnology, 2014, 25(27), 275701.

Carl Junesand, Himanshu Kataria, Wondwosen Metaferia, Nick Julian, Zhechao Wang, Yan-Ting Sun, John Bowers, Galia Pozina, Lars Hultman and Sebastian Lourdudoss
  Study of planar defect filtering in InP grown on Si by epitaxial lateral overgrowth
  Optical Materials Express, 2013, 3(11), 1960-1973.
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 Web of Science® Times Cited: 3

Thien Duc Tran, Galia Pozina, Erik Janzén and Carl Hemmingsson
  Investigation of deep levels in bulk GaN material grown by halide vapor phase epitaxy
  Journal of Applied Physics, 2013, 114(15), .
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Sergey Khromov, Bo Monemar, V. Avrutin, H. Morkoc, Lars Hultman and Galia Pozina
  Correlation between Si doping and stacking fault related luminescence in homoepitaxial m-plane GaN
  Applied Physics Letters, 2013, 103, 192101.
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 Web of Science® Times Cited: 2

A. A. Toropov, E. A. Shevchenko, T. V. Shubina, V. N. Jmerik, D. V. Nechaev, M. A. Yagovkina, A. A. Sitnikova, S. V. Ivanov, Galia Pozina, J. P. Bergman and Bo Monemar
  Suppression of the quantum-confined Stark effect in AlxGa1-xN/AlyGa1-yN corrugated quantum wells
  Journal of Applied Physics, 2013, 114(12), .
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Bo Monemar, Sergey Khromov, Galia Pozina, Plamen Paskov, Peder Bergman, Carl Hemmingsson, Lars Hultman, Hiroshi Amano, Vitaliy Avrutin, Xing Li and Hadis Morkoc
  Luminescence of Acceptors in Mg-Doped GaN
  Japanese Journal of Applied Physics, 2013, 52(8), .
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 Web of Science® Times Cited: 3

G. Yu, Rudko, A. O. Kovalchuk, V. I. Fediv, Q. J. Ren, Weimin Chen, Irina Buyanova and Galia Pozina
  Role of the host polymer matrix in light emission processes in nano-CdS/poly vinyl alcohol composite
  Thin Solid Films, 2013, 543, 11-15.

Galia Pozina, Carl Hemmingsson, H Amano and Bo Monemar
  Surface potential effect on excitons in AlGaN/GaN quantum well structures
  Applied Physics Letters, 2013, 102(8), .
 Web of Science® Times Cited: 1

Carl Hemmingsson and Galia Pozina
  Optimization of low temperature GaN buffer layers for halide vapor phase epitaxy growth of bulk GaN
  Journal of Crystal Growth, 2013, 366, 61-66.
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 Web of Science® Times Cited: 2

Carl Junesand, Chen Hu, Zhechao Wang, Wondwosen Metaferia, Pritesh Dagur, Galia Pozina, Lars Hultman and Sebastian Lourdudoss
  Effect of the Surface Morphology of Seed and Mask Layers on InP Grown on Si by Epitaxial Lateral Overgrowth
  Journal of Electronic Materials, 2012, 41(9), 2345-2349.
 Web of Science® Times Cited: 6

Sergey Khromov, Bo Monemar, V. Avrutin, Xing Li, H. Morkoç, Lars Hultman and Galia Pozina
  Optical and structural studies of homoepitaxially grown m-plane GaN
  Applied Physics Letters, 2012, 100(17), 172108.
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 Web of Science® Times Cited: 4

Jan Junis Rindermann, Galia Pozina, Bo Monemar, Lars Hultman, Hiroshi Amano and Pavlos G. Lagoudakis
  Dependence of Resonance Energy Transfer on Exciton Dimensionality
 
Altmetric usage: 2

  Physical Review Letters, 2011, 107(23), 236805.
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 Web of Science® Times Cited: 7

Galia Pozina, Sergey Khromov, Carl Hemmingsson, Lars Hultman and Bo Monemar
  Effect of silicon and oxygen doping on donor bound excitons in bulk GaN
  Physical Review B. Condensed Matter and Materials Physics, 2011, 84(16), 165213.
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 Web of Science® Times Cited: 5

Wondwosen Metaferia, Carl Junesand, Ming-Horng Gau, Ikai Lo, Galia Pozina, Lars Hultman and Sebastian Lourdudoss
  Morphological evolution during epitaxial lateral overgrowth of indium phosphide on silicon
  Journal of Crystal Growth, 2011, 332(1), 27-33.
 Web of Science® Times Cited: 7

T. V. Shubina, A. .A. Toropov, Galia Pozina, Peder Bergman, M. M. Glazov, N. A. Gippius, P. Disseix, J. Leymarie, B. Gil and Bo Monemar
  Excitonic parameters of GaN studied by time-of-flight spectroscopy
  Applied Physics Letters, 2011, 99(10), 101108.
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 Web of Science® Times Cited: 3

Sergey Khromov, Carl Hemmingsson, H Amano, Bo Monemar, Lars Hultman and Galia Pozina
  Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaN
  Physical Review B. Condensed Matter and Materials Physics, 2011, 84(7), 075324.
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 Web of Science® Times Cited: 7

Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, David Lindgren, Lars Samuelson, Xianfeng Ni, Hadis Morkoc, Tanya Paskova, Zhaoxia Bi and Jonas Ohlsson
  Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates
  PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208(7), 1532-1534.
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 Web of Science® Times Cited: 2

T V Shubina, M M Glazov, N A Gippius, A A Toropov, D Lagarde, P Disseix, J Leymarie, B Gil, Galia Pozina, J Peder Bergman and Bo Monemar
  Delay and distortion of slow light pulses by excitons in ZnO
  Physical Review B. Condensed Matter and Materials Physics, 2011, 84(7), 075202.
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 Web of Science® Times Cited: 5

Carl Hemmingsson, Galia Pozina, Sergey Khromov and Bo Monemar
  Growth of GaN nanotubes by halide vapor phase epitaxy
  NANOTECHNOLOGY, 2011, 22(8), 085602.
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 Web of Science® Times Cited: 5

Bo Monemar, Plamen Paskov, Peder Bergman, Galia Pozina, A.A. Toropov, T.V. Shubina, T. Malinauskas and A. Usui
  Transient photoluminescence of shallow donor bound excitons in GaN
  Physical Review B. Condensed Matter and Materials Physics, 2010, 82, 235202.
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 Web of Science® Times Cited: 19

Galia Pozina, Li-Li Yang, Qingxiang Zhao, Lars Hultman and P G Lagoudakis
  Size dependent carrier recombination in ZnO nanocrystals
  APPLIED PHYSICS LETTERS, 2010, 97(13), 131909.
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 Web of Science® Times Cited: 11

Li Li Yang, Qingxiang Zhao, Muhammad Qadir Israr, Jamil Rana Sadaf, Magnus Willander, Galia Pozina and J. H. Yang
  Indirect optical transition due to surface band bending in ZnO nanotubes
  Journal of Applied Physics, 2010, 108(10), .
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 Web of Science® Times Cited: 11

Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, T Kawashima, H Amano, I Akasaki, T Paskova, S Figge, D Hommel and A Usui
  Evidence for Two Mg Related Acceptors in GaN
  PHYSICAL REVIEW LETTERS, 2009, 102(23), 235501.
 Web of Science® Times Cited: 37

Galia Pozina, David H. Trinh, Hans Högberg, M. Collin, I. Reineck and Lars Hultman
  Phase identification in γ- and κ-alumina coatings by cathodoluminescence
  Scripta Materialia, 2009, 61(4), 379-382.
 Web of Science® Times Cited: 2

David Trinh, K Back, Galia Pozina, H Blomqvist, T Selinder, M Collin, I Reineck, Lars Hultman and Hans Högberg
  Phase transformation in kappa- and gamma-Al2O3 coatings on cutting tool inserts
  Surface & Coatings Technology, 2009, 203(12), 1682-1688.
 Web of Science® Times Cited: 20

Carl Hemmingsson, M Boota, R O Rahmatalla, M Junaid, Galia Pozina, Jens Birch and Bo Monemar
  Growth and characterization of thick GaN layers grown by halide vapour phase epitaxy on lattice-matched AlInN templates
  JOURNAL OF CRYSTAL GROWTH, 2009, 311(2), 292-297.
 Web of Science® Times Cited: 5

Gernot J Riedel, James W Pomeroy, Keith P Hilton, Jessica O Maclean, David J Wallis, Michael J Uren, Trevor Martin, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Galia Pozina, Erik Janzén, Richard Lossy, Reza Pazirandeh, Frank Brunner, Joachim Wuerfl and Martin Kuball
  Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers
  IEEE Electron Device Letters, 2009, 30(2), 103-106.
 Web of Science® Times Cited: 26

Carl Hemmingsson, Galia Pozina, M. Heuken, B. Schineller and Bo Monemar
  Modeling, optimization, and growth of GaN in a vertical halide vapor-phase epitaxy bulk reactor
  Journal of Crystal Growth, 2008, 310(5), 906-910.
 Web of Science® Times Cited: 7

Galia Pozina, Carl Hemmingsson, Peder Bergman, David Trinh, Lars Hultman and Bo Monemar
  Time-resolved spectroscopy of freestanding GaN layers grown by halide vapour phase epitaxy
  Superlattices and Microstructures, 2008, 43(5-6), 605-609.
 Web of Science® Times Cited: 4

Tatiana Shubina, M. M. Glazov, A. A. Toropov, N. A. Gippius, A. Vasson, J. Leymarie, A. Kavokin, A. Usui, Peder Bergman, Galia Pozina and Bo Monemar
  Resonant light delay in GaN with ballistic and diffusive propagation
  Physical Review Letters, 2008, 100(8), .
 Web of Science® Times Cited: 12

Galia Pozina, Carl Hemmingsson, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Bo Monemar, Lars Hultman and Erik Janzén
  Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substrate
  Journal of Applied Physics, 2008, 104(11), 113513.
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 Web of Science® Times Cited: 2

Galia Pozina, Carl Hemmingsson, Plamen P. Paskov, Peder Bergman, Bo Monemar, T. Kawashima, H. Amano, I. Akasaki and A. Usui
  Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates
  Applied Physics Letters, 2008, 92(15), 151904.
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 Web of Science® Times Cited: 7

Carl Hemmingsson, Plamen Paskov, Galia Pozina, M. Heuken, B. Schineller and Bo Monemar
  Hydride vapour phase epitaxy growth and characterization of thick GaN using a vertical HVPE reactor
  Journal of Crystal Growth, 2007, 300(1), 32-36.
 Web of Science® Times Cited: 13

Tatiana Shubina, A.A. Toropov, O.G. Lublinskaya, P.S. Kopev, S.V. Ivanov, A. El-Shaer, M. Al-Suleiman, A. Bakin, A. Waag, A. Voinilovich, E.V. Lutsenko, G.P. Yablonskii, Peder Bergman, Galia Pozina and Bo Monemar
  Recombination dynamics and lasing in ZnO/ZnMgO single quantum well structures
  Applied Physics Letters, 2007, 91(20), .
 Web of Science® Times Cited: 17

Galia Pozina, Plamen Paskov, Peder Bergman, Carl Hemmingsson, Lars Hultman, Bo Monemar, H. Amano and A. Usui
  Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates
  Applied Physics Letters, 2007, 91(22), .
 Web of Science® Times Cited: 12

Irina Buyanova, Peder Bergman, Galia Pozina, Weimin Chen, S. Rawal, D.P. Norton, S.J. Pearton, A. Osinsky and J.W. Dong
  Mechanism for radiative recombination in ZnCdO alloys
  Applied Physics Letters, 2007, 90(26), .
 Web of Science® Times Cited: 19

Galia Pozina, Carl Hemmingsson, Peder Bergman, David Trinh, Lars Hultman and Bo Monemar
  Dynamics of bound excitons versus thickness in freestanding GaN wafers grown by halide vapor phase epitaxy
  Applied Physics Letters, 2007, 90(22), .
 Web of Science® Times Cited: 8

Carl Hemmingsson, Plamen Paskov, Galia Pozina, M. Heuken, B. Schineller and Bo Monemar
  Growth of bulk GaN in a vertical hydride vapour phase epitaxy reactor
  Superlattices and Microstructures, 2006, 40( 4-6 SPEC. ISS.), 205-213.
 Web of Science® Times Cited: 14

Bo Monemar, Plamen Paskov, H Haradizadeh, Peder Bergman, E Valcheva, Vanya Darakchieva, B Arnaudov, Tanja Paskova, Per-Olof Holtz, Galia Pozina, S Kamiyama, M Iwaya, H Amano and I Akasaki
  Optical investigation of AlGaN/GaN quantum wells and superlattices
  Physica status solidi. A, Applied research, 2004, 201(10), 2251-2258.

H. Haratizadeh, Bo Monemar, Plamen Paskov, Per-Olof Holtz, Galia Pozina, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Time resolved photoluminescence study of Si modulation doped GaN/Al 0.07Ga0.93N multiple quantum wells
  Physica status solidi. B, Basic research, 2004, 241(5), 1124-1133.
 Web of Science® Times Cited: 9

Bo Monemar, Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Peder Bergman, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum well structures
  Physica status solidi. B, Basic research, 2003, 237(1), 353-364.
 Web of Science® Times Cited: 22

Tatiana Shubina, SV Ivanov, AA Toropov, SV Sorokin, Alexander Lebedev, RN Kyutt, DD Solnyshkov, Galia Pozina, JP Bergman, Bo Monemar, Magnus Willander, A Waag and G Landwehr
  Interface effects in type-II CdSe/BeTe quantum dots
  Physica status solidi. B, Basic research, 2002, 229(1), 489-492.
 Web of Science® Times Cited: 6

Galia Pozina, JP Bergman, Bo Monemar, S Kamiyama, M Iwaya, H Amano and I Akasaki
  Optical study of AlGaN/GaN multiple quantum well structures grown on laterally overgrown GaN templates
  Physica status solidi. A, Applied research, 2002, 190(1), 107-111.

Bo Monemar, Plamen Paskov, Galia Pozina, JP Bergman, S Kamiyama, M Iwaya, H Amano and I Akasaki
  Influence of depletion fields on photoluminescence of n-doped InGaN/GaN multiple quantum well structures
  Physica status solidi. A, Applied research, 2002, 192(1), 21-26.
 Web of Science® Times Cited: 4

Bo Monemar, Plamen Paskov, JP Bergman, Galia Pozina, Vanya Darakchieva, M Iwaya, S Kamiyama, H Amano and I Akasaki
  Photoluminescence in n-doped In0.1Ga0.9N/In0.01Ga0.99N multiple quantum wells
  MRS Internet journal of nitride semiconductor research, 2002, 7(7), 1.
 Web of Science® Times Cited: 8

Bo Monemar, Plamen Paskov, JP Bergman, Galia Pozina, Tanja Paskova, S Kamiyama, M Iwaya, H Amano and I Akasaki
  Photoluminescence of excitons in InxGa1-xN/InyGa1-yN multiple quantum wells
  Physica status solidi. A, Applied research, 2002, 190(1), 161-166.
 Web of Science® Times Cited: 2

M.Ya. Valakh, S.V. Ivanov, N. Mestres, J. Pascual, T.V. Shubina, S.V. Sorokin, V.V. Streltchuk, Galia Pozina and Bo Monemar
  Optical investigation of CdSe/ZnSe quantum nanostructures
  Semiconductor Science and Technology, 2002, 17(2), 173-177.
 Web of Science® Times Cited: 4

Irina Buyanova, Galia Pozina, Peder Bergman, Weimin Chen, H. P. Xin and C. W. Tu
  Time-resolved studies of photoluminescence in GaNxP1-x alloys: Evidence for indirect-direct band gap crossover
  Applied Physics Letters, 2002, 81(1), 52.
 Web of Science® Times Cited: 49

Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Effect of n-type modulation doping on the photoluminescence of GaN/Al0.07Ga0.93N multiple quantum wells
  Applied Physics Letters, 2002, 80(8), 1373.
 Web of Science® Times Cited: 15

Galia Pozina, NV Edwards, JP Bergman, Bo Monemar, MD Bremser and RF Davis
  Time-resolved photoluminescence in strained GaN layers
  Physica status solidi. A, Applied research, 2001, 183(1), 151-155.
 Web of Science® Times Cited: 5

EM Goldys, M Godlewski, Tanja Paskova, Galia Pozina and Bo Monemar
  Characterization of red emission in nominally undoped hydride vapor phase epitaxy GaN
  MRS Internet journal of nitride semiconductor research, 2001, 6(1), art. no.-1.
 Web of Science® Times Cited: 9

Bo Monemar, Plamen Paskov, Galia Pozina, Tanja Paskova, JP Bergman, M Iwaya, S Nitta, H Amano and I Akasaki
  Optical characterization of InGaN/GaN MQW structures without in phase separation
  Physica status solidi. B, Basic research, 2001, 228(1), 157-160.
 Web of Science® Times Cited: 5

Galia Pozina, JP Bergman, Bo Monemar, B Heying and JS Speck
  Radiative and nonradiative exciton lifetimes in GaN grown by molecular beam epitaxy
  Physica status solidi. B, Basic research, 2001, 228(2), 485-488.
 Web of Science® Times Cited: 2

Galia Pozina, N.V. Edwards, Peder Bergman, Tanja Paskova, Bo Monemar, M.D. Bremser and R.F. Davis
  Time-resolved spectroscopy of strained GaN/AIN/6H-SiC heterostructures grown by metalorganic chemical vapor deposition
  Applied Physics Letters, 2001, 78(8), 1062-1064.
 Web of Science® Times Cited: 9

Irina A. Buyanova, Weimin Chen, Galia Pozina, P.N. Hai, Bo Monemar, H.P. Xin and C.W. Tu
  Optical properties of GaNAs/GaAs structures
  Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, 2001, 82(1-3), 143-147.
 Web of Science® Times Cited: 9

Galia Pozina, Peder Bergman, Bo Monemar, S. Yamaguchi, H. Amano and I. Akasaki
  Time-resolved optical properties of GaN grown by metalorganic vapor phase epitaxy with indium surfactant
  Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, 2001, 82(1-3), 137-139.
 Web of Science® Times Cited: 4

Galia Pozina, Peder Bergman, Bo Monemar, M. Iwaya, S. Nitta, H. Amano and I. Akasaki
  Photoluminescence of InGaN/GaN multiple quantum wells grown by mass transport
  Journal of Crystal Growth, 2001, 230(3-4), 473-476.
 Web of Science® Times Cited: 1

Bo Monemar, Weimin Chen, Plamen Paskov, Tanja Paskova, Galia Pozina and Peder Bergman
  The 3.466 eV Bound Exciton in GaN
  Physica status solidi. B, Basic research, 2001, 228(2), 489-492.
 Web of Science® Times Cited: 7

A. A. Toropov, S. V. Sorokin, K. A. Kuritsyn, S. V. Ivanov, Galia Pozina, Peder Bergman, Matthias Wagner, Weimin Chen, Bo Monemar, A. Waag, D. R. Yakovlev, C. Sas, W. Ossau and G. Landwehr
  Magneto-photoluminescence studies of Cd(Mn)Se/Zn(Mn)Se diluted magnetic nanostructures
  Physica. E, Low-Dimensional systems and nanostructures, 2001, 10(1-3), 362-367.
 Web of Science® Times Cited: 2

Irina Buyanova, Galia Pozina, P. N. Hai, Weimin Chen, H. P. Xin and C. W. Tu
  Type I band alignment in the GaNxAs1-x/GaAs quantum wells
  , 2001, 63(3), 333031-333034.
 Web of Science® Times Cited: 12

Galia Pozina, JP Bergman, Bo Monemar, S Yamaguchi, H Amano and I Akasaki
  Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant
  Applied Physics Letters, 2000, 76(23), 3388-3390.
 Web of Science® Times Cited: 22

Galia Pozina, JP Bergman, B Bonemar, T Takeuchi, H Amano and I Akasaki
  Multiple peak spectra from InGaN/GaN multiple quantum wells
  Physica status solidi. A, Applied research, 2000, 180(1), 85-89.
 Web of Science® Times Cited: 3

Galia Pozina, JP Bergman, Bo Monemar, T Takeuchi, H Amano and I Akasaki
  Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells
  Journal of Applied Physics, 2000, 88(5), 2677-2681.
 Web of Science® Times Cited: 40

Galia Pozina, JP Bergman, Bo Monemar, M Iwaya, S Nitta, H Amano and I Akasaki
  InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport
  Applied Physics Letters, 2000, 77(11), 1638-1640.
 Web of Science® Times Cited: 15

A.A. Toropov, T.V. Shubina, A.V. Lebedev, S.V. Sorokin, S.V. Ivanov, Galia Pozina, Peder Bergman and Bo Monemar
  Dynamics of excitons near the mobility edge in CdSe/ZnSe superlattices
  Journal of Crystal Growth, 2000, 214, 806-809.
 Web of Science® Times Cited: 2

S.V. Ivanov, A.A. Toropov, T.V. Shubina, A.V. Lebedev, S.V. Sorokin, A.A. Sitnikova, P.S. Kop'Ev, G. Reuscher, M. Keim, F. Bensing, A. Waag, G. Landwehr, Galia Pozina, Peder Bergman and Bo Monemar
  MBE growth and properties of bulk BeCdSe alloys and digital (BeSe: CdSe)/ZnSe quantum wells
  Journal of Crystal Growth, 2000, 214, 109-114.
 Web of Science® Times Cited: 17

Wei-Xin Ni, Chun-Xia Du, F. Duteil, Galia Pozina and Göran Hansson
  Light emitting SiGe/i-Si/Si: Er
  Thin Solid Films, 2000, 369(1), 414-418.
 Web of Science® Times Cited: 6

F. Duteil, Chun-Xia Du, K.B. Joelsson, Per Persson, Lars Hultman, Galia Pozina, Wei-Xin Ni and Göran Hansson
  Luminescence and microstructure of Er/O co-doped Si structures grown by MBE using Er and SiO evaporation
  Materials Science in Semiconductor Processing, 2000, 3(5-6), 523-528.
 Web of Science® Times Cited: 6

A.A. Toropov, T.V. Shubina, S.V. Sorokin, R.N. Kyutt, S.V. Ivanov, Galia Pozina, Peder Bergman, Bo Monemar, M. Karlsteen and M. Willander
  Excitons as a probe of interface morphology in Cd(Zn)Se/ZnSe heterostructures
  Applied Surface Science, 2000, 166(1), 278-283.
 Web of Science® Times Cited: 4

Bo Monemar and Galia Pozina
  Group III-nitride based hetero and quantum structures
  Progress in Quantum Electronics, 2000, 24(6), 239-290.
 Web of Science® Times Cited: 73

Irina Buyanova, Galia Pozina, P. N. Hai, N. Q. Thinh, Peder Bergman, Weimin Chen, H. P. Xin and C. W. Tu
  Mechanism for rapid thermal annealing improvements in undoped GaNxAs1-x/GaAs structures grown by molecular beam epitaxy
  Applied Physics Letters, 2000, 77(15), 2325.
 Web of Science® Times Cited: 72

Galia Pozina, JP Bergman, Tanja Paskova and Bo Monemar
  Bound exciton dynamics in GaN grown by hydride vapor-phase epitaxy
  Applied Physics Letters, 1999, 75(26), 4124-4126.

Bo Monemar, Peder Bergman, J Dalfors, Galia Pozina, Bo Sernelius, Per-Olof Holtz, H Amano and I Akasaki
  Radiative recombination in In0.15Ga0.85N/GaN multiple quantum well structures
  MRS Internet journal of nitride semiconductor research, 1999, 4(16), .

Irina Buyanova, Weimin Chen, Galia Pozina, Peder Bergman, Bo Monemar, H. P. Xin and C. W. Tu
  Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy
  Applied Physics Letters, 1999, 75(4), 501.

Irina Buyanova, Weimin Chen, Galia Pozina, Bo Monemar, H. P. Xin and C. W. Tu
  Mechanism for Light Emission in GaNAs/GaAs Structures Grown by Molecular Beam Epitaxy
  Physica status solidi. B, Basic research, 1999, 216(1), 125-129.

Conference Articles

Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, David Lindgren, Lars Samuelson, Xianfeng Ni, Hadis Morkoç, Tanya Paskova, Zhaoxia Bi and Jonas Ohlsson
  Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates
  Gallium Nitride Materials and Devices VI, 2011.


 Web of Science® Times Cited: 1  Fulltext PDF

Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, H. Amano, I. Akasaki, S. Figge, D. Hommel, Tanja Paskova and A. Usiui
  Mg related acceptors in GaN
  Phys. Status Solidi C 7, 2010.


 Web of Science® Times Cited: 4  Fulltext PDF

Qingxiang Zhao, Li-Li Yang, Magnus Willander, Galia Pozina and Per-Olof Holtz
  Surface Recombination in ZnO Nanorods Grown by Aqueous Chemical Method
  PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors, 2009.


Bo Monemar, Galia Pozina, Plamen Paskov, Carl Hemmingsson, Peder Bergman, T. Kawashima, H. Amano, I. Akasaki and A. Usui
  Acceptors in Mg doped GaN, optical properties and metastability
  IWN 2008,2008, 2008.


Tatiana Choubina, M.M. Glazov, A.A. Toropov, Ivan Gueorguiev Ivanov, N.A. Gippius, A. Vasson, J. Leymaire, A. Kavokin, A. Usui, Peder Bergman, Galia Pozina and Bo Monemar
  Realization of slow light in GaN crystals
  IWN 2008,2008, 2008.


Y. Honda, T. Hikosaka, M. Yamaguchi, N. Sawaki, Galia Pozina, Fredrik Karlsson, Vanya Darakchieva, Plamen Paskov and Bo Monemar
  DAP emission band in a carbon doped (1-101)GaN grown ob (001) Si substrate
  Phys. Stat. Sol. (c) Vol. 6, 2008.


 Web of Science® Times Cited: 3

Tatiana Choubina, M.M. Glazov, A.A. Toropov, N.A. Gippius, A. Vasson, J. Leymarie, A. Kavokin, A. Usui, Peder Bergman, Galia Pozina and Bo Monemar
  The slow light in GaN
  ICPS2008,2008, 2008.


Bo Monemar, Plamen Paskov, Galia Pozina, Peder Bergman, Carl Hemmingsson, A.A. Toropov, Tatiana Choubina, T. Kawashima, H. Amano, I. Akasaki, A. Usui and Tanja Paskova
  Properties of dopants and defects in GaN from bound exciton spectra
  Meijo International Symposium on Nitride Semiconductors 2008,2008, 2008.


Bo Monemar, Plamen Paskov, Galia Pozina, Peder Bergman, Carl Hemmingsson, T. Kawashima, H. Amano, I. Akasaki and A. Usui
  Optical properties and acceptor states in Mg doped GaN
  8^th Akasaki Symposium,2008, 2008.


Galia Pozina, Carl Hemmingsson, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Ivan Gueorguiev Ivanov, Bo Monemar, Lars Hultman and Erik Janzén
  Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4- SiC substrate
  8th International Conference on Physics of Light-Matter Coupling in Nanostructures,2008, 2008.


Galia Pozina, Bo Monemar, H. Amano, I. Akasaki and A. Usui
  Metastable UV luminescence in Mg-doped GaN layers grown on freestanding GaN substrates
  International Symposium on Semiconductor Light Emitting Devices,2008, 2008.


Galia Pozina, Carl Hemmingsson, Peder Bergman, T. Kawashima, H. Amano, I. Akasaki, A. Usui and Bo Monemar
  Optical properties of metastable shallow acceptors in Mg-doped GaN layers grown by metal-organic vapor phase epitaxy
  in PHYSICS OF SEMICONDUCTORS, vol 1199, 2008.


Irina Buyanova, Peder Bergman, Galia Pozina, Weimin Chen, S. Rawal, D.P. Norton, S.J. Pearton, A. Osinsky and J.W. Dong
  Origin of near-band-edge emission in ZnCdO alloys
  2007 MRS Fall Meeting,2007, 2007.


Galia Pozina, Bo Monemar, Plamen Paskov, Carl Hemmingsson, Lars Hultman, H. Amano, I. Akasaki, Tanja Paskova, S. Figge, D. Hommel and A. Usui
  Metastability of the UV luminescence in Mg-doped GaN layers grown by MOVPE on quasi-bulk GaN templates
  , 2007.


 Web of Science® Times Cited: 5

A Ellison, Björn Magnusson, B Sundqvist, Galia Pozina, Peder Bergman, Erik Janzén and A Vehanen
  SiC crystal growth by HTCVD
  Materials Science Forum, Vols. 457-460, 2004.


 Web of Science® Times Cited: 43

A Kakanakova-Georgieva, Urban Forsberg, Christer Hallin, Per Persson, Liutauras Storasta, Galia Pozina, Jens Birch, Lars Hultman and Erik Janzén
  Implementation of hot-wall MOCVD in the growth of high-quality GaN on SiC
  Materials Science Forum, Vols. 433-436, 2003.


 Web of Science® Times Cited: 3

Bo Monemar, Plamen Paskov, H. Haratizadeh, Galia Pozina, Peder Bergman, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures
  Proceedings of SPIE, the International Society for Optical Engineering, 2003.


Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Photoluminescence study of Si doped GaN/AlGaN multi quantum wells
  ICPS 2002,2002, 2003.


Peder Bergman, Galia Pozina, Bo Monemar, S Kamiyama, M Iwaya, H Amano and I Akasaki
  Photoluminescence and electroluminescence characterization of InxGa1-x/InyGa1-yN multiple quantum well light emitting diodes
  Materials Science Forum, Vols. 389-393, 2002.


JP Bergman, H Jakobsson, Liutauras Storasta, Fredrik Carlsson, Björn Magnusson, S Sridhara, Galia Pozina, H Lendenmann and Erik Janzén
  Characterisation and defects in silicon carbide
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 34

Bo Monemar, Plamen Paskov, Tanja Paskova, Peder Bergman, Galia Pozina, Weimin Chen, P.N. Hai, Irina A. Buyanova, H. Amano and I. Akasaki
  Optical characterization of III-nitrides
  , 2002.


 Web of Science® Times Cited: 20

Irina Buyanova, Galia Pozina, Weimin Chen, H. P. Xin and C. W. Tu
  Time-resolved studies of photoluminescence in GaNP epilayers and multiple quantum well structures
  E-MRS 2002 Spring Meeting,2002, 2002.


Irina Buyanova, Galia Pozina, P. N. Hai, Weimin Chen, H. P. Xin and C. W. Tu
  Evidence for type I band alignment in GaNAs/GaAs quantum structures by optical spectroscopies
  , 2002.


 Web of Science® Times Cited: 2

Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Photoluminescence study of Si doped GaN/GaN/Al0.07Ga0.93N multi quantum wells
  NANO-7/ECOSS-21,2002, 2002.


Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  The influence of Si-donor doping on the exciton localization in modulation- doped GaN/AlGaN multi quantum wells
  14th Indium Phosphide and Related Materials Conference IPRM 2002,2002, 2002.


Anne Henry, A Ellison, Urban Forsberg, Björn Magnusson, Galia Pozina and Erik Janzén
  Characterization of bulk and epitaxial SiC material using photoluminescence spectroscopy
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 18

Galia Pozina, JP Bergman, Bo Monemar, M Iwaya, S Nitta, H Amano and I Akasaki
  Luminescence of InGaN/GaN multiple quantum wells grown by mass-transport
  Materials Science Forum, Vols. 353-356, 2001.


Irina Buyanova, Galia Pozina, P. N. Hai, Weimin Chen, H. P. Xin and C. W. Tu
  Band alignment in the GaNAs/GaAs quantum structures
  , 2001.


Irina Buyanova, Weimin Chen, Galia Pozina, P. N. Hai, H. P. Xin and C. W. Tu
  Recombination processes in GaNAs/GaAs structures
  , 2001.


Galia Pozina, Peder Bergman, Carl Hemmingsson and Erik Janzén
  Time-resolved photoluminescence study of bound and free excitons in 4H SiC
  Materials Science Forum, Vols. 338-343, 2000.


 Web of Science® Times Cited: 1

Irina Buyanova, Weimin Chen, Galia Pozina, P. N. Hai, N. Q. Thinh, E. M. Goldys, H. P. Xin and C. W. Tu
  Optical and electronic properties of GaNAs/GaAs structures
  , 2000.


Peder Bergman, Galia Pozina, Bo Monemar, J. Dalfors, Bo Sernelius, Per-Olof Holtz, H. Amano and I. Akasaki
  Radiative recombination in InGaN/GaN multiple quantum well
  ICSCRM 99,1999, 2000.


Bo Monemar, Peder Bergman, Galia Pozina, Irina Buyanova, Weimin Chen, Matthias Wagner and Tanja Paskova
  Defects in Gallium Nitride
  International Workshop on Materials Science,1999, 1999.


Ph.D. Theses

Sergey Khromov
  Doping effects on the structural and optical properties of GaN
  2013.


  Fulltext PDF

Licentiate Theses

Sergey Khromov
  The Effect of Mg Doping on Optical and Structural Properties of GaN
  2012.


  Fulltext PDF

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