Publications for Fredrik Carlsson
Co-author map based on ISI articles 2007-

Keywords

trap transient temperature sic photoluminescence minority irradiation ion implanted implantation hole degreesc defects defect d1 d-ii center carrier annealing 4h-sic

Journal Articles

Adam Gali, P Deak, E Rauls, Tien Son Nguyen, Ivan Gueorguiev Ivanov, Fredrik Carlsson, Erik Janzén and WJ Choyke
  Correlation between the antisite pair and the D-I center in SiC
  Physical Review B. Condensed Matter and Materials Physics, 2003, 67(15), .
 Web of Science® Times Cited: 52

A. Hallen, M.S. Janson, A.Yu. Kuznetsov, D. Aberg, M.K. Linnarsson, B.G. Svensson, Per Persson, Fredrik Carlsson, Liutauras Storasta, Peder Bergman, S.G Sridhara and Y. Zhang
  Ion implantation of silicon carbide
  Nuclear Instruments and Methods in Physics Reseach B, 2002, 186(1-4), 186-194.
 Web of Science® Times Cited: 37

S.G. Sridhara, Fredrik Carlsson, Peder Bergman and Erik Janzén
  Luminescence from stacking faults in 4H SiC
  Applied Physics Letters, 2001, 79(24), 3944-3946.
 Web of Science® Times Cited: 80

Liutauras Storasta, Fredrik Carlsson, S.G. Sridhara, Peder Bergman, Anne Henry, T. Egilsson, A. Hallen and Erik Janzén
  Pseudodonor nature of the D1 defect in 4H-SiC
  Applied Physics Letters, 2001, 78(1), 46-48.
 Web of Science® Times Cited: 72

Conference Articles

Liutauras Storasta, Fredrik Carlsson, Peder Bergman and Erik Janzén
  Recombination enhanced defect annealing in 4H-SiC
  Materials Science Forum, Vols. 483-485, 2005.


 Web of Science® Times Cited: 3

Adam Gali, P. Deák, E. Rauls, Son Tien Nguyen, Ivan Gueorguiev Ivanov, Fredrik Carlsson, Erik Janzén and W.J. Choyke
  Antisites as possible origin of irradiation induced photoluminescence centers in SiC: A theoretical study on clusters of antisites and carbon interstitials in 4H-SiC
  Mater. Sci. Forum, Vol. 457-460, 2004.


 Web of Science® Times Cited: 1

Fredrik Carlsson, SG Sridhara, A Hallen, JP Bergman and Erik Janzén
  D-II PL intensity dependence on dose, implantation temperature and implanted species in 4H-and 6H-SiC
  Materials Science Forum, Vols. 433-436, 2003.


Adam Gali, P. Deak, E. Rauls, Tien Son Nguyen, Ivan Gueorguiev Ivanov, Fredrik Carlsson, Erik Janzén and W.J. Choyke
  Anti-site pair in SiC: A model of the DI center
  Physica B, 2003.


 Web of Science® Times Cited: 7

Erik Janzén, Ivan Gueorguiev Ivanov, Son Tien Nguyen, Björn Magnusson, Z Zolnai, Anne Henry, Peder Bergman, Liutauras Storasta and Fredrik Carlsson
  Defects in SiC
  Physica B: Condensed Matter, Vols. 340-342, 2003.


 Web of Science® Times Cited: 14

JP Bergman, H Jakobsson, Liutauras Storasta, Fredrik Carlsson, Björn Magnusson, S Sridhara, Galia Pozina, H Lendenmann and Erik Janzén
  Characterisation and defects in silicon carbide
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 34

Fredrik Carlsson, Liutauras Storasta, Björn Magnusson, Peder Bergman, K Skold and Erik Janzén
  Neutron irradiation of 4H SiC
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 5

BG Svensson, A Hallen, MK Linnarsson, AY Kuznetsov, MS Janson, D Aberg, J Osterman, Per Persson, Lars Hultman, Liutauras Storasta, Fredrik Carlsson, JP Bergman, C Jagadish and E Morvan
  Doping of silicon carbide by ion implantation
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 15

Liutauras Storasta, Fredrik Carlsson, SG Sridhara, D Aberg, Peder Bergman, A Hallen and Erik Janzén
  Proton irradiation induced defects in 4H-SiC
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 15

Björn Magnusson, A Ellison, Fredrik Carlsson, Tien Son Nguyen and Erik Janzén
  As-grown and process-induced intrinsic deep-level luminescence in 4H SiC
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 4

Peder Bergman, Liutauras Storasta, Fredrik Carlsson, S. Sridhara, Björn Magnusson and Erik Janzén
  Defects in 4H silicon carbide
  Physica B, Vols. 308-310, 2001.


 Web of Science® Times Cited: 9

Fredrik Carlsson, Liutauras Storasta, Peder Bergman and Erik Janzén
  Trapped carrier electroluminescence (TraCE) - A novel method for correlating electrical and optical measurements
  Physica B, Vols. 308-310, 2001.


 Web of Science® Times Cited: 1

SG Sridhara, Fredrik Carlsson, JP Bergman, Anne Henry and Erik Janzén
  Investigation of an ion-implantation induced high temperature persistent intrinsic defect in SiC
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 9

Fredrik Carlsson, Liutauras Storasta, Carl Hemmingsson, Peder Bergman and Erik Janzén
  Electroluminescence from implanted and epitaxially grown pn-diodes
  Materials Science Forum, Vols. 338-343, 2000.


 Web of Science® Times Cited: 2