Publications for Fredrik Carlsson
Co-author map based on ISI articles 2007-
Journal Articles
Adam Gali, P Deak, E Rauls, Tien Son Nguyen, Ivan Gueorguiev Ivanov, Fredrik Carlsson, Erik Janzén and WJ Choyke
Correlation between the antisite pair and the D-I center in SiC
Physical Review B. Condensed Matter and Materials Physics, 2003, 67(15), .
Web of Science® Times Cited: 48 |
A. Hallen, M.S. Janson, A.Yu. Kuznetsov, D. Aberg, M.K. Linnarsson, B.G. Svensson, Per Persson, Fredrik Carlsson, Liutauras Storasta, Peder Bergman, S.G Sridhara and Y. Zhang
Ion implantation of silicon carbide
Nuclear Instruments and Methods in Physics Reseach B, 2002, 186(1-4), 186-194.
Web of Science® Times Cited: 32 |
Liutauras Storasta, Fredrik Carlsson, S.G. Sridhara, Peder Bergman, Anne Henry, T. Egilsson, A. Hallen and Erik Janzén
Pseudodonor nature of the D1 defect in 4H-SiC
Applied Physics Letters, 2001, 78(1), 46-48.
Web of Science® Times Cited: 64 |
S.G. Sridhara, Fredrik Carlsson, Peder Bergman and Erik Janzén
Luminescence from stacking faults in 4H SiC
Applied Physics Letters, 2001, 79(24), 3944-3946.
Web of Science® Times Cited: 72 |
Conference Articles
Liutauras Storasta, Fredrik Carlsson, Peder Bergman and Erik Janzén
Recombination enhanced defect annealing in 4H-SiC
Materials Science Forum, Vols. 483-485, 2005.
Web of Science® Times Cited: 3
|
Adam Gali, P. Deák, E. Rauls, Son Tien Nguyen, Ivan Gueorguiev Ivanov, Fredrik Carlsson, Erik Janzén and W.J. Choyke
Antisites as possible origin of irradiation induced photoluminescence centers in SiC: A theoretical study on clusters of antisites and carbon interstitials in 4H-SiC
Mater. Sci. Forum, Vol. 457-460, 2004.
Web of Science® Times Cited: 1
|
Fredrik Carlsson, SG Sridhara, A Hallen, JP Bergman and Erik Janzén
D-II PL intensity dependence on dose, implantation temperature and implanted species in 4H-and 6H-SiC
Materials Science Forum, Vols. 433-436, 2003.
|
Adam Gali, P. Deak, E. Rauls, Tien Son Nguyen, Ivan Gueorguiev Ivanov, Fredrik Carlsson, Erik Janzén and W.J. Choyke
Anti-site pair in SiC: A model of the DI center
Physica B, 2003.
Web of Science® Times Cited: 7
|
Erik Janzén, Ivan Gueorguiev Ivanov, Son Tien Nguyen, Björn Magnusson, Z Zolnai, Anne Henry, Peder Bergman, Liutauras Storasta and Fredrik Carlsson
Defects in SiC
Physica B: Condensed Matter, Vols. 340-342, 2003.
Web of Science® Times Cited: 14
|
JP Bergman, H Jakobsson, Liutauras Storasta, Fredrik Carlsson, Björn Magnusson, S Sridhara, Galia Pozina, H Lendenmann and Erik Janzén
Characterisation and defects in silicon carbide
Materials Science Forum, Vols. 389-393, 2002.
Web of Science® Times Cited: 30
|
Fredrik Carlsson, Liutauras Storasta, Björn Magnusson, Peder Bergman, K Skold and Erik Janzén
Neutron irradiation of 4H SiC
Materials Science Forum, Vols. 353-356, 2001.
Web of Science® Times Cited: 5
|
BG Svensson, A Hallen, MK Linnarsson, AY Kuznetsov, MS Janson, D Aberg, J Osterman, Per Persson, Lars Hultman, Liutauras Storasta, Fredrik Carlsson, JP Bergman, C Jagadish and E Morvan
Doping of silicon carbide by ion implantation
Materials Science Forum, Vols. 353-356, 2001.
Web of Science® Times Cited: 15
|
Liutauras Storasta, Fredrik Carlsson, SG Sridhara, D Aberg, Peder Bergman, A Hallen and Erik Janzén
Proton irradiation induced defects in 4H-SiC
Materials Science Forum, Vols. 353-356, 2001.
Web of Science® Times Cited: 13
|
SG Sridhara, Fredrik Carlsson, JP Bergman, Anne Henry and Erik Janzén
Investigation of an ion-implantation induced high temperature persistent intrinsic defect in SiC
Materials Science Forum, Vols. 353-356, 2001.
Web of Science® Times Cited: 7
|
Björn Magnusson, A Ellison, Fredrik Carlsson, Tien Son Nguyen and Erik Janzén
As-grown and process-induced intrinsic deep-level luminescence in 4H SiC
Materials Science Forum, Vols. 353-356, 2001.
Web of Science® Times Cited: 4
|
Peder Bergman, Liutauras Storasta, Fredrik Carlsson, S. Sridhara, Björn Magnusson and Erik Janzén
Defects in 4H silicon carbide
Physica B, Vols. 308-310, 2001.
Web of Science® Times Cited: 9
|
Fredrik Carlsson, Liutauras Storasta, Peder Bergman and Erik Janzén
Trapped carrier electroluminescence (TraCE) - A novel method for correlating electrical and optical measurements
Physica B, Vols. 308-310, 2001.
Web of Science® Times Cited: 1
|
Fredrik Carlsson, Liutauras Storasta, Carl Hemmingsson, Peder Bergman and Erik Janzén
Electroluminescence from implanted and epitaxially grown pn-diodes
Materials Science Forum, Vols. 338-343, 2000.
Web of Science® Times Cited: 2
|
Ph.D., Lic. Theses
