Publication List for for Franziska Beyer

Publications for Franziska Beyer

Co-author map based on Web of Sciences articles 2007-

Publications mentioned in social media 1 times*

Journal Articles

Ian Don Booker, Jawad Ul Hassan, Louise Lilja, Franziska Beyer, Robin Karhu, J. Peder Bergman, Örjan Danielsson, Olof Kordina, Einar Sveinbjörnsson and Erik Janzén Carrier Lifetime Controlling Defects Z(1/2) and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC Crystal Growth & Design, 2014, 14(8), 4104-4110. Fulltext Web of Science® Times Cited: 2	Altmetric usage: 1
Andreas Gällström, Björn Magnusson, Franziska Beyer, Adam Gali, Nguyen Son Tien, Stefano Leone, Ivan Gueorguiev Ivanov, Carl Hemmingsson, Anne Henry and Erik Janzén Optical identification and electronic configuration of tungsten in 4H-and 6H-SiC Physica. B, Condensed matter, 2012, 407(10), 1462-1466. Web of Science® Times Cited: 5
Anne Henry, Stefano Leone, Franziska Beyer, Henrik Pedersen, Olle Kordina, Sven Andersson and Erik Janzén SiC epitaxy growth using chloride-based CVD Physica. B, Condensed matter, 2012, 407(10), 1467-1471. Fulltext Web of Science® Times Cited: 9
Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, J Isoya, N Morishita, T Ohshima and Erik Janzén Capacitance transient study of a bistable deep level in e(-)-irradiated n-type 4H-SiC Journal of Physics D: Applied Physics, 2012, 45(45), . Fulltext Web of Science® Times Cited: 2
Franziska Beyer, Carl Hemmingsson, Andreas Gällström, Stefano Leone, Henrik Pedersen, Anne Henry and Erik Janzén Deep levels in tungsten doped n-type 3C-SiC Applied Physics Letters, 2011, 98(15), 152104. Fulltext Web of Science® Times Cited: 10
Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, Erik Janzén, J. Isoya, N. Morishita and T. Ohshima Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n-type 4H-SiC Journal of Applied Physics, 2011, 109(10), 103703. Fulltext Web of Science® Times Cited: 3
Stefano Leone, Franziska Beyer, Henrik Pedersen, Sven Andersson, Olle Kordina, Anne Henry and Erik Janzén Chlorinated precursor study in low temperature CVD of 4H-SiC Thin Solid Films, 2011, 519(10), 3074-3080. Web of Science® Times Cited: 11
Stefano Leone, Franziska Beyer, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén Growth of smooth 4H-SiC epilayers on 4° off-axis substrates with chloride-based CVD at very high growth rate Materials research bulletin, 2011, 46(8), 1272-1275. Web of Science® Times Cited: 11
Franziska Beyer, Carl Hemmingsson, Stefano Leone, Y.-C. Lin, Henrik Gällström, Anne Henry and Erik Janzén Deep levels in iron doped n- and p-type 4H-SiC Journal of Applied Physics, 2011, 110, 123701-1-123701-5. Fulltext Web of Science® Times Cited: 6
Stefano Leone, Franziska Beyer, Anne Henry, Carl Hemmingsson, Olle Kordina and Erik Janzén Chloride-Based SiC Epitaxial Growth toward Low Temperature Bulk Growth Crystal Growth & Design, 2010, 10(8), 3743-3751. Web of Science® Times Cited: 11
Stefano Leone, Franziska Beyer, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén High growth rate of 4H-SiC epilayers grown on on-axis substrates with different chlorinated precursors Crystal Growth & Design, 2010, 10(12), 5334-5340. Web of Science® Times Cited: 18
Stefano Leone, Franziska Beyer, Anne Henry, Olle Kordina and Erik Janzén Chloride-based CVD of 3C-SiC epitaxial layers on 6H(0001) SiC Physica Status Solidi (RRL) – Rapid Research Letters, 2010, 4(11), 305-307. Web of Science® Times Cited: 17
Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, J Isoya, N Morishita, T Ohshima and Erik Janzén Bistable defects in low-energy electron irradiated n-type 4H-SiC PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2010, 4(8-9), 227-229. Web of Science® Times Cited: 5
Patrick Carlsson, Nguyen Son Tien, Franziska Beyer, Henrik Pedersen, J Isoya, N Morishita, T Ohshima and Erik Janzén Deep levels in low-energy electron-irradiated 4H-SiC PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2009, 3(4), 121-123. Web of Science® Times Cited: 8
Henrik Pedersen, Franziska Beyer, Jawad ul-Hassan, Anne Henry and Erik Janzén Donor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD Journal of Crystal Growth, 2009, 311(5), 1321-1327. Web of Science® Times Cited: 19
Henrik Pedersen, Franziska Beyer, Anne Henry and Erik Janzén Acceptor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD Journal of Crystal Growth, 2009, 311(13), 3364-3370. Web of Science® Times Cited: 15
Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Beyer, Vanya Darakchieva and Erik Janzén Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS) Journal of Crystal Growth, 2007, 307(2), 334-340. Web of Science® Times Cited: 70