Publications for Franziska Beyer
Co-author map based on ISI articles 2007-
Keywords
transient temperature substrates sic precursor n-type low-energy irradiation epitaxial epilayers energy doping dlts defects defect cvd chloride-based bistable 4h-sic 3c-sic
Journal Articles
Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, J Isoya, N Morishita, T Ohshima and Erik Janzén
Capacitance transient study of a bistable deep level in e(-)-irradiated n-type 4H-SiC
Journal of Physics D: Applied Physics, 2012, 45(45), .
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Andreas Gällström, Björn Magnusson, Franziska Beyer, Adam Gali, Nguyen Son Tien, Stefano Leone, Ivan Gueorguiev Ivanov, Carl Hemmingsson, Anne Henry and Erik Janzén
Optical identification and electronic configuration of tungsten in 4H-and 6H-SiC
Physica. B, Condensed matter, 2012, 407(10), 1462-1466.
Web of Science® Times Cited: 2 |
Anne Henry, Stefano Leone, Franziska Beyer, Henrik Pedersen, Olle Kordina, Sven Andersson and Erik Janzén
SiC epitaxy growth using chloride-based CVD
Physica. B, Condensed matter, 2012, 407(10), 1467-1471.
Fulltext Web of Science® Times Cited: 4 |
Franziska Beyer, Carl Hemmingsson, Stefano Leone, Y.-C. Lin, Henrik Gällström, Anne Henry and Erik Janzén
Deep levels in iron doped n- and p-type 4H-SiC
Journal of Applied Physics, 2011, 110, 123701-1-123701-5.
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Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, Erik Janzén, J. Isoya, N. Morishita and T. Ohshima
Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n-type 4H-SiC
Journal of Applied Physics, 2011, 109(10), 103703.
Fulltext Web of Science® Times Cited: 1 |
Franziska Beyer, Carl Hemmingsson, Andreas Gällström, Stefano Leone, Henrik Pedersen, Anne Henry and Erik Janzén
Deep levels in tungsten doped n-type 3C-SiC
Applied Physics Letters, 2011, 98(15), 152104.
Fulltext Web of Science® Times Cited: 9 |
Stefano Leone, Franziska Beyer, Henrik Pedersen, Sven Andersson, Olle Kordina, Anne Henry and Erik Janzén
Chlorinated precursor study in low temperature CVD of 4H-SiC
Thin Solid Films, 2011, 519(10), 3074-3080.
Web of Science® Times Cited: 10 |
Stefano Leone, Franziska Beyer, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén
Growth of smooth 4H-SiC epilayers on 4° off-axis substrates with chloride-based CVD at very high growth rate
Materials research bulletin, 2011, 46(8), 1272-1275.
Web of Science® Times Cited: 8 |
Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, J Isoya, N Morishita, T Ohshima and Erik Janzén
Bistable defects in low-energy electron irradiated n-type 4H-SiC
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2010, 4(8-9), 227-229.
Web of Science® Times Cited: 3 |
Stefano Leone, Franziska Beyer, Anne Henry, Carl Hemmingsson, Olle Kordina and Erik Janzén
Chloride-Based SiC Epitaxial Growth toward Low Temperature Bulk Growth
Crystal Growth & Design, 2010, 10(8), 3743-3751.
Web of Science® Times Cited: 9 |
Stefano Leone, Franziska Beyer, Anne Henry, Olle Kordina and Erik Janzén
Chloride-based CVD of 3C-SiC epitaxial layers on 6H(0001) SiC
Physica Status Solidi (RRL) – Rapid Research Letters, 2010, 4(11), 305-307.
Web of Science® Times Cited: 13 |
Stefano Leone, Franziska Beyer, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén
High growth rate of 4H-SiC epilayers grown on on-axis substrates with different chlorinated precursors
Crystal Growth & Design, 2010, 10(12), 5334-5340.
Web of Science® Times Cited: 13 |
Patrick Carlsson, Nguyen Son Tien, Franziska Beyer, Henrik Pedersen, J Isoya, N Morishita, T Ohshima and Erik Janzén
Deep levels in low-energy electron-irradiated 4H-SiC
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2009, 3(4), 121-123.
Web of Science® Times Cited: 8 |
Henrik Pedersen, Franziska Beyer, Anne Henry and Erik Janzén
Acceptor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD
Journal of Crystal Growth, 2009, 311(13), 3364-3370.
Web of Science® Times Cited: 11 |
Henrik Pedersen, Franziska Beyer, Jawad ul-Hassan, Anne Henry and Erik Janzén
Donor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD
Journal of Crystal Growth, 2009, 311(5), 1321-1327.
Web of Science® Times Cited: 12 |
Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Beyer, Vanya Darakchieva and Erik Janzén
Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS)
Journal of Crystal Growth, 2007, 307(2), 334-340.
Web of Science® Times Cited: 57 |
Conference Articles
Siva Kotamraju, Bharat Krishnan, Franziska C. Beyer, Anne Henry, Olle Kordina, Erik Janzén and Yaroslav Koshka
Electrical and optical properties of high-purity epilayers grown by the low-temperature chloro-carbon growth method
Materials Science Forum Vol 717 - 720, 2012.
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Stefano Leone, Henrik Pedersen, Franziska Beyer, Sven Andersson, Olle Kordina, Anne Henry, Andrea Canino, Francesco La Via and Erik Janzén
Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles
Materials Science Forum Vols 717 - 720, 2012.
Web of Science® Times Cited: 1
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Andreas Gällström, Björn Magnusson, Franziska Beyer, Adam Gali, Nguyen Tien Son, Stefano Leone, Ivan G. Ivanov, Anne Henry, Carl Hemmingsson and Erik Janzén
Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC
Materials Science Forum Vols 717 - 720, 2012.
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Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, Junichi Isoya, Norio Morishita, Takeshi Ohshima and Erik Janzén
Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC
<em>Materials Science Forum Vols. 679-680 (2011) pp 249-252</em>, 2011.
Web of Science® Times Cited: 1
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Stefano Leone, Yuan-Chih Lin, Franziska C. Beyer, Sven Andersson, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén
Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates
<em>Materials Science Forum Vols. 679-680 (2011) pp 59-62</em>, 2011.
Web of Science® Times Cited: 6
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Anne Henry, Stefano Leone, Franziska C. Beyer, Sven Andersson, Olle Kordina and Erik Janzén
Chloride based CVD of 3C-SiC on (0001) α-SiC substrates
<em>Materials Science Forum Vols. 679-680 (2011) pp 75-78</em>, 2011.
Web of Science® Times Cited: 5 Fulltext
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Stefano Leone, Franziska Beyer, Anne Henry, Olle Kordina and Erik Janzén
Chloride-based CVD of 3C-SiC Epitaxial Layers on On-axis 6H (0001) SiC Substrates
AIP Conference Proceedings, Vol. 1292, 2010.
Web of Science® Times Cited: 1
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Franziska Beyer, Stefano Leone, Carl Hemmingsson, Anne Henry and Erik Janzén
Deep levels in hetero-epitaxial as-grown 3C-SiC
AIP Conference Proceedings, Vol. 1292, 2010.
Web of Science® Times Cited: 1
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Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, J. Isoya, N. Morishita, T. Ohshima and Erik Janzén
Defects in low-energy electron-irradiated n-type 4H-SiC
Physica Scripta, vol. T141, 2010.
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Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, Junichi Isoya, Norio Morishita, Takeshi Ohshima and Erik Janzén
Metastable defects in low-energy electron irradiated n-type 4H-SiC
Materials Science Forum, Vols. 645-648, 2010.
Web of Science® Times Cited: 1 Fulltext
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Franziska Beyer, Henrik Pedersen, Anne Henry and Erik Janzén
Defects in 4H-SiC Layers Grown by Chloride-based Epitaxy
Materials Science Forum Vols. 615-617, 2009.
Web of Science® Times Cited: 3
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Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Beyer, Anders Lundskog and Erik Janzén
Chloride-based SiC epitaxial growth
Materials Science Forum Vols. 615-617, 2009.
Web of Science® Times Cited: 1
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S. Hahn, Franziska Beyer, Andreas Gällström, Patrick Carlsson, Anne Henry, Björn Magnusson, J. Niklas and Erik Janzén
Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material
Materials Science Forum Vols. 600-603, 2009.
Web of Science® Times Cited: 2
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Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Beyer, Vanya Darakchieva and Erik Janzén
Very high growth rate of 4H-SiC using MTS as chloride-based precursor
Materials Science Forum, Vol. 600-603, 2009.
Web of Science® Times Cited: 3
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Anne Henry, Jawad ul-Hassan, Henrik Pedersen, Franziska Beyer, Peder Bergman, Sven Andersson, Erik Janzén and P. Godignon
Thick epilayers for power devices
Materials Science Forum, vol. 556-557, 2007.
Web of Science® Times Cited: 8
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Andreas Gällström, Björn Magnusson, Patrick Carlsson, Son Tien Nguyen, Anne Henry, Franziska Beyer, Mikael Syväjärvi, Rositsa Yakimova and Erik Janzén
Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC
Materials Science Forum, vol. 556-557, 2007.
Web of Science® Times Cited: 5
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Ph.D. Theses
Ph.D., Lic. Theses
