Publications for Franziska Beyer

Publications for Franziska BeyerCo-author map based on ISI articles 2007-

Publications mentioned in social media 1 times*

Keywords

transient temperature substrates sic precursor n-type low-energy irradiation epitaxial epilayers energy doping dlts defects defect cvd chloride-based bistable 4h-sic 3c-sic

Journal Articles

Ian Don Booker, Jawad Ul Hassan, Louise Lilja, Franziska Beyer, Robin Karhu, J. Peder Bergman, Orjan Danielsson, Olof Kordina, Einar Sveinbjörnsson and Erik Janzén
  Carrier Lifetime Controlling Defects Z(1/2) and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC
 
Altmetric usage: 1

  Crystal Growth & Design, 2014, 14(8), 4104-4110.
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Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, J Isoya, N Morishita, T Ohshima and Erik Janzén
  Capacitance transient study of a bistable deep level in e(-)-irradiated n-type 4H-SiC
  Journal of Physics D: Applied Physics, 2012, 45(45), .
   Fulltext  PDF  
 Web of Science® Times Cited: 1

Andreas Gällström, Björn Magnusson, Franziska Beyer, Adam Gali, Nguyen Son Tien, Stefano Leone, Ivan Gueorguiev Ivanov, Carl Hemmingsson, Anne Henry and Erik Janzén
  Optical identification and electronic configuration of tungsten in 4H-and 6H-SiC
  Physica. B, Condensed matter, 2012, 407(10), 1462-1466.
 Web of Science® Times Cited: 2

Anne Henry, Stefano Leone, Franziska Beyer, Henrik Pedersen, Olle Kordina, Sven Andersson and Erik Janzén
  SiC epitaxy growth using chloride-based CVD
  Physica. B, Condensed matter, 2012, 407(10), 1467-1471.
   Fulltext  PDF  
 Web of Science® Times Cited: 5

Franziska Beyer, Carl Hemmingsson, Stefano Leone, Y.-C. Lin, Henrik Gällström, Anne Henry and Erik Janzén
  Deep levels in iron doped n- and p-type 4H-SiC
  Journal of Applied Physics, 2011, 110, 123701-1-123701-5.
   Fulltext  PDF  
 Web of Science® Times Cited: 2

Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, Erik Janzén, J. Isoya, N. Morishita and T. Ohshima
  Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n-type 4H-SiC
  Journal of Applied Physics, 2011, 109(10), 103703.
   Fulltext  PDF  
 Web of Science® Times Cited: 2

Franziska Beyer, Carl Hemmingsson, Andreas Gällström, Stefano Leone, Henrik Pedersen, Anne Henry and Erik Janzén
  Deep levels in tungsten doped n-type 3C-SiC
  Applied Physics Letters, 2011, 98(15), 152104.
   Fulltext  PDF  
 Web of Science® Times Cited: 9

Stefano Leone, Franziska Beyer, Henrik Pedersen, Sven Andersson, Olle Kordina, Anne Henry and Erik Janzén
  Chlorinated precursor study in low temperature CVD of 4H-SiC
  Thin Solid Films, 2011, 519(10), 3074-3080.
 Web of Science® Times Cited: 10

Stefano Leone, Franziska Beyer, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén
  Growth of smooth 4H-SiC epilayers on 4° off-axis substrates with chloride-based CVD at very high growth rate
  Materials research bulletin, 2011, 46(8), 1272-1275.
 Web of Science® Times Cited: 8

Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, J Isoya, N Morishita, T Ohshima and Erik Janzén
  Bistable defects in low-energy electron irradiated n-type 4H-SiC
  PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2010, 4(8-9), 227-229.
 Web of Science® Times Cited: 3

Stefano Leone, Franziska Beyer, Anne Henry, Carl Hemmingsson, Olle Kordina and Erik Janzén
  Chloride-Based SiC Epitaxial Growth toward Low Temperature Bulk Growth
  Crystal Growth & Design, 2010, 10(8), 3743-3751.
 Web of Science® Times Cited: 10

Stefano Leone, Franziska Beyer, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén
  High growth rate of 4H-SiC epilayers grown on on-axis substrates with different chlorinated precursors
  Crystal Growth & Design, 2010, 10(12), 5334-5340.
 Web of Science® Times Cited: 15

Stefano Leone, Franziska Beyer, Anne Henry, Olle Kordina and Erik Janzén
  Chloride-based CVD of 3C-SiC epitaxial layers on 6H(0001) SiC
  Physica Status Solidi (RRL) – Rapid Research Letters, 2010, 4(11), 305-307.
 Web of Science® Times Cited: 14

Patrick Carlsson, Nguyen Son Tien, Franziska Beyer, Henrik Pedersen, J Isoya, N Morishita, T Ohshima and Erik Janzén
  Deep levels in low-energy electron-irradiated 4H-SiC
  PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2009, 3(4), 121-123.
 Web of Science® Times Cited: 8

Henrik Pedersen, Franziska Beyer, Anne Henry and Erik Janzén
  Acceptor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD
  Journal of Crystal Growth, 2009, 311(13), 3364-3370.
 Web of Science® Times Cited: 12

Henrik Pedersen, Franziska Beyer, Jawad ul-Hassan, Anne Henry and Erik Janzén
  Donor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD
  Journal of Crystal Growth, 2009, 311(5), 1321-1327.
 Web of Science® Times Cited: 13

Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Beyer, Vanya Darakchieva and Erik Janzén
  Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS)
  Journal of Crystal Growth, 2007, 307(2), 334-340.
 Web of Science® Times Cited: 58

Conference Articles

Siva Kotamraju, Bharat Krishnan, Franziska C. Beyer, Anne Henry, Olle Kordina, Erik Janzén and Yaroslav Koshka
  Electrical and optical properties of high-purity epilayers grown by the low-temperature chloro-carbon growth method
  Materials Science Forum Vol 717 - 720, 2012.


 Web of Science® Times Cited: 1

Stefano Leone, Henrik Pedersen, Franziska Beyer, Sven Andersson, Olle Kordina, Anne Henry, Andrea Canino, Francesco La Via and Erik Janzén
  Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles
  Materials Science Forum Vols 717 - 720, 2012.


 Web of Science® Times Cited: 1

Andreas Gällström, Björn Magnusson, Franziska Beyer, Adam Gali, Nguyen Tien Son, Stefano Leone, Ivan G. Ivanov, Anne Henry, Carl Hemmingsson and Erik Janzén
  Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC
  Materials Science Forum Vols 717 - 720, 2012.


Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, Junichi Isoya, Norio Morishita, Takeshi Ohshima and Erik Janzén
  Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC
  <em>Materials Science Forum Vols. 679-680 (2011) pp 249-252</em>, 2011.


 Web of Science® Times Cited: 1

Stefano Leone, Yuan-Chih Lin, Franziska C. Beyer, Sven Andersson, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén
  Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates
  <em>Materials Science Forum Vols. 679-680 (2011) pp 59-62</em>, 2011.


 Web of Science® Times Cited: 6

Anne Henry, Stefano Leone, Franziska C. Beyer, Sven Andersson, Olle Kordina and Erik Janzén
  Chloride based CVD of 3C-SiC on (0001) α-SiC substrates
  <em>Materials Science Forum Vols. 679-680 (2011) pp 75-78</em>, 2011.


 Web of Science® Times Cited: 6  Fulltext PDF

Stefano Leone, Franziska Beyer, Anne Henry, Olle Kordina and Erik Janzén
  Chloride-based CVD of 3C-SiC Epitaxial Layers on On-axis 6H (0001) SiC Substrates
  AIP Conference Proceedings, Vol. 1292, 2010.


 Web of Science® Times Cited: 1

Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, J. Isoya, N. Morishita, T. Ohshima and Erik Janzén
  Defects in low-energy electron-irradiated n-type 4H-SiC
  Physica Scripta, vol. T141, 2010.


Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, Junichi Isoya, Norio Morishita, Takeshi Ohshima and Erik Janzén
  Metastable defects in low-energy electron irradiated n-type 4H-SiC
  Materials Science Forum, Vols. 645-648, 2010.


 Web of Science® Times Cited: 1  Fulltext PDF

Franziska Beyer, Stefano Leone, Carl Hemmingsson, Anne Henry and Erik Janzén
  Deep levels in hetero-epitaxial as-grown 3C-SiC
  AIP Conference Proceedings, Vol. 1292, 2010.


 Web of Science® Times Cited: 1

Franziska Beyer, Henrik Pedersen, Anne Henry and Erik Janzén
  Defects in 4H-SiC Layers Grown by Chloride-based Epitaxy
  Materials Science Forum Vols. 615-617, 2009.


 Web of Science® Times Cited: 4

Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Beyer, Anders Lundskog and Erik Janzén
  Chloride-based SiC epitaxial growth
  Materials Science Forum Vols. 615-617, 2009.


 Web of Science® Times Cited: 1

S. Hahn, Franziska Beyer, Andreas Gällström, Patrick Carlsson, Anne Henry, Björn Magnusson, J. Niklas and Erik Janzén
  Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material
  Materials Science Forum Vols. 600-603, 2009.


 Web of Science® Times Cited: 2

Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Beyer, Vanya Darakchieva and Erik Janzén
  Very high growth rate of 4H-SiC using MTS as chloride-based precursor
  Materials Science Forum, Vol. 600-603, 2009.


 Web of Science® Times Cited: 4

Anne Henry, Jawad ul-Hassan, Henrik Pedersen, Franziska Beyer, Peder Bergman, Sven Andersson, Erik Janzén and P. Godignon
  Thick epilayers for power devices
  Materials Science Forum, vol. 556-557, 2007.


 Web of Science® Times Cited: 8

Andreas Gällström, Björn Magnusson, Patrick Carlsson, Son Tien Nguyen, Anne Henry, Franziska Beyer, Mikael Syväjärvi, Rositsa Yakimova and Erik Janzén
  Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC
  Materials Science Forum, vol. 556-557, 2007.


 Web of Science® Times Cited: 5

Ph.D. Theses

Franziska C. Beyer
  Deep levels in SiC
  2011.


  Fulltext PDF

* Social media data based on publications from 2011 to present and with a DOI; data delivered by Altmetric.com.