Publications for Daniel Nilsson
Co-author map based on ISI articles 2007-


temperature silicon sic si qds pyramids n-type mocvd hot-wall high-al-content gan epitaxial doping donor conductivity carbon alsub>n aln alloys al

Journal Articles

Milan Yazdanfar, Emil Kalered, Örjan Danielsson, Olle Kordina, Daniel Nilsson, Ivan Gueorguiev Ivanov, Lars Ojamäe, Erik Janzén and Henrik Pedersen
  Brominated chemistry for chemical vapor deposition of electronic grade SiC
  Chemistry of Materials, 2015, 27(3), 793-801.
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Daniel Nilsson, Xuan Thang Trinh, Erik Janzén, Tien Nguyen Son and Anelia Kakanakova-Georgieva
  On the behavior of the silicon donor in conductive AlxGa1-xN (0.63≤x≤1) layers
  Physica status solidi. B, Basic research, 2015, 252(6), 1306-1310.

Jr-Tai Chen, Ingemar Persson, Daniel Nilsson, Chih-Wei Hsu, Justinas Palisaitis, Urban Forsberg, Per Persson and Erik Janzén
  Room-Temperature mobility above 2200 cm2/V.s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure
  Applied Physics Letters, 2015, 106(25), .
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Daniel Nilsson, Erik Janzén and Anelia Kakanakova-Georgieva
  Strain and morphology compliance during the intentional doping of high-Al-content AlGaN layers
  Applied Physics Letters, 2014, 105(8), 082106.
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 Web of Science® Times Cited: 1

Anders Lundskog, Chih-Wei Hsu, K. Fredrik Karlsson, Supaluck Amloy, Daniel Nilsson, Urban Forsberg, Per-Olof Holtz and Erik Janzén
  Direct generation of linearly-polarized photon emission with designated orientations from site-controlled InGaN quantum dots
  Light: Science & Applications, 2014, 3, e139.
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 Web of Science® Times Cited: 14

Xuan Thang Trinh, Daniel Nilsson, Ivan Gueorguiev Ivanov, Erik Janzén, Anelia Kakanakova-Georgieva and Nguyen Tien Son
  Stable and metastable Si negative-U centers in AlGaN and AlN
  Applied Physics Letters, 2014, 105(16), 162106-1-162106-4.
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 Web of Science® Times Cited: 3

S Schoeche, P Kuehne, T Hofmann, M Schubert, Daniel Nilsson, Anelia Kakanakova-Gueorguie, Erik Janzén and Vanya Darakchieva
  Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect
  Applied Physics Letters, 2013, 103(21), 212107.
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 Web of Science® Times Cited: 2

Anelia Kakanakova-Georgieva, Daniel Nilsson, Xuan Thang Trinh, Urban Forsberg, Son Tien Nguyen and Erik Janzén
  The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN
  Applied Physics Letters, 2013, 102(13), 132113.
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 Web of Science® Times Cited: 11

Anders Lundskog, Chih-Wei Hsu, Daniel Nilsson, K Fredrik Karlsson, Urban Forsberg, Per-Olof Holtz and Erik Janzén
  Controlled growth of hexagonal GaN pyramids by hot-wall MOCVD
  Journal of Crystal Growth, 2013, 363, 287-293.
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 Web of Science® Times Cited: 3

X. T. Trinh, D Nilsson, I. G. Ivanov, E Janzén, A Kakanakova-Georgieva and N.T. Son
  Negative-U behavior of the Si donor in Al0.77Ga0.23N
  Applied Physics Letters, 2013, 103(4), 042101.
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 Web of Science® Times Cited: 5

Anelia Kakanakova-Gueorgieva, Daniel Nilsson and Erik Janzén
  High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures
  Journal of Crystal Growth, 2012, 338(1), 52-56.
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 Web of Science® Times Cited: 14

Anelia Kakanakova-Georgieva, Daniel Nilsson, M Stattin, Urban Forsberg, Å Haglund, A Larsson and Erik Janzén
  Mg-doped Al0.85Ga0.15N layers grown by hot-wall MOCVD with low resistivity at room temperature
 Web of Science® Times Cited: 7

Conference Articles

Anelia Kakanakova-Gueorguie, Daniel Nilsson, Xuan Thang Trinh, Nguyen Tien Son and Erik Janzén
  Silicon and oxygen in high-Al-content AlGaN: incorporation kinetics and electron paramagnetic resonance study
  Gettering and Defect Engineering in Semiconductor Technology XV, 2014.

Ph.D. Theses

Daniel Nilsson
  Doping of high-Al-content AlGaN grown by MOCVD

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