Publications for Daniel Nilsson
Co-author map based on ISI articles 2007-

Journal Articles

Anders Lundskog, Chih-Wei Hsu, K. Fredrik Karlsson, Supaluck Amloy, Daniel Nilsson, Urban Forsberg, Per-Olof Holtz and Erik Janzén
  Direct generation of linearly-polarized photon emission with designated orientations from site-controlled InGaN quantum dots
  Light: Science & Applications, 2014, 3, e139.
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 Web of Science® Times Cited: 5

Daniel Nilsson, Erik Janzén and Anelia Kakanakova-Georgieva
  Strain and morphology compliance during the intentional doping of high-Al-content AlGaN layers
  Applied Physics Letters, 2014, 105(8), 082106.
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Xuan Thang Trinh, Daniel Nilsson, Ivan Gueorguiev Ivanov, Erik Janzén, Anelia Kakanakova-Georgieva and Nguyen Tien Son
  Stable and metastable Si negative-U centers in AlGaN and AlN
  Applied Physics Letters, 2014, 105(16), 162106-1-162106-4.
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S Schoeche, P Kuehne, T Hofmann, M Schubert, Daniel Nilsson, Anelia Kakanakova-Gueorguie, Erik Janzén and Vanya Darakchieva
  Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect
  Applied Physics Letters, 2013, 103(21), 212107.
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 Web of Science® Times Cited: 1

Anelia Kakanakova-Georgieva, Daniel Nilsson, Xuan Thang Trinh, Urban Forsberg, Son Tien Nguyen and Erik Janzén
  The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN
  Applied Physics Letters, 2013, 102(13), 132113.
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 Web of Science® Times Cited: 5

X. T. Trinh, D Nilsson, I. G. Ivanov, E Janzén, A Kakanakova-Georgieva and N.T. Son
  Negative-U behavior of the Si donor in Al0.77Ga0.23N
  Applied Physics Letters, 2013, 103(4), 042101.
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 Web of Science® Times Cited: 3

Anelia Kakanakova-Gueorgieva, Daniel Nilsson and Erik Janzén
  High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures
  Journal of Crystal Growth, 2012, 338(1), 52-56.
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 Web of Science® Times Cited: 10

Anelia Kakanakova-Georgieva, Daniel Nilsson, M Stattin, Urban Forsberg, Å Haglund, A Larsson and Erik Janzén
  Mg-doped Al0.85Ga0.15N layers grown by hot-wall MOCVD with low resistivity at room temperature
  PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2010, 4(11), 311-313.
 Web of Science® Times Cited: 5

Conference Articles

Anelia Kakanakova-Gueorguie, Daniel Nilsson, Xuan Thang Trinh, Nguyen Tien Son and Erik Janzén
  Silicon and oxygen in high-Al-content AlGaN: incorporation kinetics and electron paramagnetic resonance study
  Gettering and Defect Engineering in Semiconductor Technology XV, 2014.


Ph.D. Theses

Daniel Nilsson
  Doping of high-Al-content AlGaN grown by MOCVD
  2014.


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