Publications for Daniel Nilsson
Co-author map based on ISI articles 2007-
Journal Articles
X. T. Trinh, D Nilsson, I. G. Ivanov, E Janzén, A Kakanakova-Georgieva and N.T. Son
Negative-U behavior of the Si donor in Al0.77Ga0.23N
Applied Physics Letters, 2013, 103(4), 042101.
Web of Science® Times Cited: 1 |
Anelia Kakanakova-Georgieva, Daniel Nilsson, Xuan Thang Trinh, Urban Forsberg, Son Tien Nguyen and Erik Janzén
The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN
Applied Physics Letters, 2013, 102(13), 132113.
Fulltext  Web of Science® Times Cited: 2 |
S Schoeche, P Kuehne, T Hofmann, M Schubert, Daniel Nilsson, Anelia Kakanakova-Gueorguie, Erik Janzén and Vanya Darakchieva
Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect
Applied Physics Letters, 2013, 103(21), 212107.
Fulltext |
Anelia Kakanakova-Gueorgieva, Daniel Nilsson and Erik Janzén
High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures
Journal of Crystal Growth, 2012, 338(1), 52-56.
Fulltext Web of Science® Times Cited: 5 |
Anelia Kakanakova-Georgieva, Daniel Nilsson, M Stattin, Urban Forsberg, Å Haglund, A Larsson and Erik Janzén
Mg-doped Al0.85Ga0.15N layers grown by hot-wall MOCVD with low resistivity at room temperature
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2010, 4(11), 311-313.
Web of Science® Times Cited: 3 |
Ph.D., Lic. Theses
