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Publications for Daniel Nilsson


Co-author map based on Web of Sciences articles 2007-

Publications mentioned in social media 14 times*

Journal Articles

S. Schoche, Tino Hofmann, Daniel Nilsson, Anelia Kakanakova-Gueorguie, Erik Janzén, Philipp Kuhne, K. Lorenz, Mathias Schubert and Vanya Darakchieva
  Infrared dielectric functions, phonon modes, and free-charge carrier properties of high-Al-content AlxGa1-xN alloys determined by mid infrared spectroscopic ellipsometry and optical Hall effect
  Journal of Applied Physics, 2017, 121(20), .

Johan Bergsten, Xun Li, Daniel Nilsson, Örjan Danielsson, Henrik Pedersen, Erik Janzén, Urban Forsberg and Niklas Rorsman
  AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor
  Japanese Journal of Applied Physics, 2016, 55, 05FK02-1-05FK02-4.
 Web of Science® Times Cited: 4

Daniel Nilsson, Erik Janzén and Anelia Kakanakova-Georgieva
  Lattice parameters, structural and optical properties of AlN true bulk, homoepitaxial and heteroepitaxial material grown at high temperatures of up to 1400 °C
  Journal of Physics D: Applied Physics, 2016, 49(17), .
 Web of Science® Times Cited: 2

Anelia Kakanakova-Gueorguie, S. -L. Sahonta, Daniel Nilsson, Xuan Thang Trinh, Son Tien Nguyen, Erik Janzén and C. J. Humphreys
  n-Type conductivity bound by the growth temperature: the case of Al0.72Ga0.28N highly doped by silicon
  Journal of Materials Chemistry C, 2016, 4(35), 8291-8296.
 Web of Science® Times Cited: 2

Milan Yazdanfar, Emil Kalered, Örjan Danielsson, Olle Kordina, Daniel Nilsson, Ivan Gueorguiev Ivanov, Lars Ojamäe, Erik Janzén and Henrik Pedersen
  Brominated chemistry for chemical vapor deposition of electronic grade SiC
  Chemistry of Materials, 2015, 27(3), 793-801.
   Fulltext  PDF  
 Web of Science® Times Cited: 4

Xun Li, J. Bergsten, Daniel Nilsson, Örjan Danielsson, Henrik Pedersen, N. Rorsman, Erik Janzén and Urban Forsberg
  Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results
  Applied Physics Letters, 2015, 107(26), 262105.
   Fulltext  PDF  
 Web of Science® Times Cited: 5

Daniel Nilsson, Xuan Thang Trinh, Erik Janzén, Tien Nguyen Son and Anelia Kakanakova-Georgieva
  On the behavior of the silicon donor in conductive AlxGa1-xN (0.63≤x≤1) layers
  Physica status solidi. B, Basic research, 2015, 252(6), 1306-1310.
 Web of Science® Times Cited: 4

Jr-Tai Chen, Ingemar Persson, Daniel Nilsson, Chih-Wei Hsu, Justinas Palisaitis, Urban Forsberg, Per Persson and Erik Janzén
  Room-Temperature mobility above 2200 cm2/V.s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure
  Applied Physics Letters, 2015, 106(25), .
   Fulltext  PDF  
 Web of Science® Times Cited: 9

Anders Lundskog, Chih-Wei Hsu, K. Fredrik Karlsson, Supaluck Amloy, Daniel Nilsson, Urban Forsberg, Per-Olof Holtz and Erik Janzén
  Direct generation of linearly-polarized photon emission with designated orientations from site-controlled InGaN quantum dots
  Light: Science & Applications, 2014, 3, .
   Fulltext  PDF  
 Web of Science® Times Cited: 33

Xuan Thang Trinh, Daniel Nilsson, Ivan Gueorguiev Ivanov, Erik Janzén, Anelia Kakanakova-Georgieva and Nguyen Tien Son
  Stable and metastable Si negative-U centers in AlGaN and AlN
  Applied Physics Letters, 2014, 105(16), 162106-1-162106-4.
   Fulltext  PDF  
 Web of Science® Times Cited: 17

Daniel Nilsson, Erik Janzén and Anelia Kakanakova-Georgieva
  Strain and morphology compliance during the intentional doping of high-Al-content AlGaN layers
  Applied Physics Letters, 2014, 105(8), 082106.
   Fulltext  PDF  
 Web of Science® Times Cited: 4

Anders Lundskog, Chih-Wei Hsu, Daniel Nilsson, K Fredrik Karlsson, Urban Forsberg, Per-Olof Holtz and Erik Janzén
  Controlled growth of hexagonal GaN pyramids by hot-wall MOCVD
  Journal of Crystal Growth, 2013, 363, 287-293.
   Fulltext  PDF  
 Web of Science® Times Cited: 9

S Schoeche, P Kuehne, T Hofmann, M Schubert, Daniel Nilsson, Anelia Kakanakova-Gueorguie, Erik Janzén and Vanya Darakchieva
  Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect
  Applied Physics Letters, 2013, 103(21), 212107.
   Fulltext  PDF  
 Web of Science® Times Cited: 7

X. T. Trinh, D Nilsson, I. G. Ivanov, E Janzén, A Kakanakova-Georgieva and N.T. Son
  Negative-U behavior of the Si donor in Al0.77Ga0.23N
  Applied Physics Letters, 2013, 103(4), 042101.
   Fulltext  PDF  
 Web of Science® Times Cited: 7

Anelia Kakanakova-Georgieva, Daniel Nilsson, Xuan Thang Trinh, Urban Forsberg, Son Tien Nguyen and Erik Janzén
  The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN
  Applied Physics Letters, 2013, 102(13), 132113.
   Fulltext  PDF  
 Web of Science® Times Cited: 16

Anelia Kakanakova-Gueorgieva, Daniel Nilsson and Erik Janzén
  High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures
  Journal of Crystal Growth, 2012, 338(1), 52-56.
   Fulltext  PDF  
 Web of Science® Times Cited: 23

Anelia Kakanakova-Georgieva, Daniel Nilsson, M Stattin, Urban Forsberg, Å Haglund, A Larsson and Erik Janzén
  Mg-doped Al0.85Ga0.15N layers grown by hot-wall MOCVD with low resistivity at room temperature
  PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2010, 4(11), 311-313.
 Web of Science® Times Cited: 9

Conference Articles

Nerijus Armakavicius, Jr-Tai Chen, Tino Hofmann, Sean Knight, Philipp Kuhne, Daniel Nilsson, Urban Forsberg, Erik Janzén and Vanya Darakchieva
  Properties of two-dimensional electron gas in AlGaN/GaN HEMT structures determined by cavity-enhanced THz optical Hall effect
  Physica Status Solidi C-Current Topics in Solid State Physics, Vol 13 No 5-6, 2016.


 Web of Science® Times Cited: 2

Anelia Kakanakova-Gueorguie, Daniel Nilsson, Xuan Thang Trinh, Nguyen Tien Son and Erik Janzén
  Silicon and oxygen in high-Al-content AlGaN: incorporation kinetics and electron paramagnetic resonance study
  Gettering and Defect Engineering in Semiconductor Technology XV, 2014.


 Web of Science® Times Cited: 1

Ph.D. Theses

Daniel Nilsson
  Doping of high-Al-content AlGaN grown by MOCVD
  2014.


  Fulltext PDF

* Social media data based on publications from 2011 to present and with a DOI; data delivered by Altmetric.com.

 



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Last updated: 2017-02-21