Publications for Daniel Nilsson
Co-author map based on ISI articles 2007-
Publications mentioned in social media 3 times*
Keywords
temperature silicon sic si qds pyramids n-type mocvd hot-wall high-al-content gan epitaxial doping donor conductivity carbon alsub>n aln alloys al
Journal Articles
Daniel Nilsson, Erik Janzén and Anelia Kakanakova-Georgieva
Lattice parameters, structural and optical properties of AlN true bulk, homoepitaxial and heteroepitaxial material grown at high temperatures of up to 1400 °C
Journal of Physics D: Applied Physics, 2016, 49(17), .
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Johan Bergsten, Xun Li, Daniel Nilsson, Örjan Danielsson, Henrik Pedersen, Erik Janzén, Urban Forsberg and Niklas Rorsman
AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor
Japanese Journal of Applied Physics, 2016, 55, 05FK02-1-05FK02-4.
Web of Science® Times Cited: 1 |
Daniel Nilsson, Xuan Thang Trinh, Erik Janzén, Tien Nguyen Son and Anelia Kakanakova-Georgieva
On the behavior of the silicon donor in conductive AlxGa1-xN (0.63≤x≤1) layers
Physica status solidi. B, Basic research, 2015, 252(6), 1306-1310.
Web of Science® Times Cited: 1 |
Milan Yazdanfar, Emil Kalered, Örjan Danielsson, Olle Kordina, Daniel Nilsson, Ivan Gueorguiev Ivanov, Lars Ojamäe, Erik Janzén and Henrik Pedersen
Brominated chemistry for chemical vapor deposition of electronic grade SiC
Chemistry of Materials, 2015, 27(3), 793-801.
Fulltext  Web of Science® Times Cited: 1 |
Jr-Tai Chen, Ingemar Persson, Daniel Nilsson, Chih-Wei Hsu, Justinas Palisaitis, Urban Forsberg, Per Persson and Erik Janzén
Room-Temperature mobility above 2200 cm2/V.s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure
Applied Physics Letters, 2015, 106(25), .
Fulltext Web of Science® Times Cited: 2 |
Xun Li, J. Bergsten, Daniel Nilsson, Örjan Danielsson, Henrik Pedersen, N. Rorsman, Erik Janzén and Urban Forsberg
Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results
Applied Physics Letters, 2015, 107(26), 262105.
Fulltext Web of Science® Times Cited: 2 |
Daniel Nilsson, Erik Janzén and Anelia Kakanakova-Georgieva
Strain and morphology compliance during the intentional doping of high-Al-content AlGaN layers
Applied Physics Letters, 2014, 105(8), 082106.
Fulltext Web of Science® Times Cited: 2 |
Anders Lundskog, Chih-Wei Hsu, K. Fredrik Karlsson, Supaluck Amloy, Daniel Nilsson, Urban Forsberg, Per-Olof Holtz and Erik Janzén
Direct generation of linearly-polarized photon emission with designated orientations from site-controlled InGaN quantum dots
Light: Science & Applications, 2014, 3, e139.
Fulltext Web of Science® Times Cited: 20 |
Xuan Thang Trinh, Daniel Nilsson, Ivan Gueorguiev Ivanov, Erik Janzén, Anelia Kakanakova-Georgieva and Nguyen Tien Son
Stable and metastable Si negative-U centers in AlGaN and AlN
Applied Physics Letters, 2014, 105(16), 162106-1-162106-4.
Fulltext Web of Science® Times Cited: 5 |
X. T. Trinh, D Nilsson, I. G. Ivanov, E Janzén, A Kakanakova-Georgieva and N.T. Son
Negative-U behavior of the Si donor in Al0.77Ga0.23N
Applied Physics Letters, 2013, 103(4), 042101.
Fulltext Web of Science® Times Cited: 5 |
Anelia Kakanakova-Georgieva, Daniel Nilsson, Xuan Thang Trinh, Urban Forsberg, Son Tien Nguyen and Erik Janzén
The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN
Applied Physics Letters, 2013, 102(13), 132113.
Fulltext Web of Science® Times Cited: 13 |
S Schoeche, P Kuehne, T Hofmann, M Schubert, Daniel Nilsson, Anelia Kakanakova-Gueorguie, Erik Janzén and Vanya Darakchieva
Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect
Applied Physics Letters, 2013, 103(21), 212107.
Fulltext Web of Science® Times Cited: 3 |
Anders Lundskog, Chih-Wei Hsu, Daniel Nilsson, K Fredrik Karlsson, Urban Forsberg, Per-Olof Holtz and Erik Janzén
Controlled growth of hexagonal GaN pyramids by hot-wall MOCVD
Journal of Crystal Growth, 2013, 363, 287-293.
Fulltext Web of Science® Times Cited: 4 |
Anelia Kakanakova-Gueorgieva, Daniel Nilsson and Erik Janzén
High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures
Journal of Crystal Growth, 2012, 338(1), 52-56.
Fulltext Web of Science® Times Cited: 16 |
Anelia Kakanakova-Georgieva, Daniel Nilsson, M Stattin, Urban Forsberg, Å Haglund, A Larsson and Erik Janzén
Mg-doped Al0.85Ga0.15N layers grown by hot-wall MOCVD with low resistivity at room temperature
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2010, 4(11), 311-313.
Web of Science® Times Cited: 7 |
Conference Articles
Ph.D. Theses
* Social media data based on publications from 2011 to present and with a DOI; data delivered by Altmetric.com.
Ph.D., Lic. Theses
