Publication List for for Daniel Nilsson

Publications for Daniel Nilsson

Co-author map based on Web of Sciences articles 2007-

Publications mentioned in social media 14 times*

Journal Articles

S. Schoche, Tino Hofmann, Daniel Nilsson, Anelia Kakanakova-Gueorguie, Erik Janzén, Philipp Kuhne, K. Lorenz, Mathias Schubert and Vanya Darakchieva Infrared dielectric functions, phonon modes, and free-charge carrier properties of high-Al-content AlxGa1-xN alloys determined by mid infrared spectroscopic ellipsometry and optical Hall effect Journal of Applied Physics, 2017, 121(20), .	Altmetric usage: 1
Daniel Nilsson, Erik Janzén and Anelia Kakanakova-Georgieva Lattice parameters, structural and optical properties of AlN true bulk, homoepitaxial and heteroepitaxial material grown at high temperatures of up to 1400 °C Journal of Physics D: Applied Physics, 2016, 49(17), . Web of Science® Times Cited: 2
Johan Bergsten, Xun Li, Daniel Nilsson, Örjan Danielsson, Henrik Pedersen, Erik Janzén, Urban Forsberg and Niklas Rorsman AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor Japanese Journal of Applied Physics, 2016, 55, 05FK02-1-05FK02-4. Web of Science® Times Cited: 4	Altmetric usage: 2
Anelia Kakanakova-Gueorguie, S. -L. Sahonta, Daniel Nilsson, Xuan Thang Trinh, Son Tien Nguyen, Erik Janzén and C. J. Humphreys n-Type conductivity bound by the growth temperature: the case of Al0.72Ga0.28N highly doped by silicon Journal of Materials Chemistry C, 2016, 4(35), 8291-8296. Web of Science® Times Cited: 2
Milan Yazdanfar, Emil Kalered, Örjan Danielsson, Olle Kordina, Daniel Nilsson, Ivan Gueorguiev Ivanov, Lars Ojamäe, Erik Janzén and Henrik Pedersen Brominated chemistry for chemical vapor deposition of electronic grade SiC Chemistry of Materials, 2015, 27(3), 793-801. Fulltext Web of Science® Times Cited: 4
Daniel Nilsson, Xuan Thang Trinh, Erik Janzén, Tien Nguyen Son and Anelia Kakanakova-Georgieva On the behavior of the silicon donor in conductive Al_xGa_1-xN (0.63≤x≤1) layers Physica status solidi. B, Basic research, 2015, 252(6), 1306-1310. Web of Science® Times Cited: 4
Jr-Tai Chen, Ingemar Persson, Daniel Nilsson, Chih-Wei Hsu, Justinas Palisaitis, Urban Forsberg, Per Persson and Erik Janzén Room-Temperature mobility above 2200 cm2/V.s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure Applied Physics Letters, 2015, 106(25), . Fulltext Web of Science® Times Cited: 9
Xun Li, J. Bergsten, Daniel Nilsson, Örjan Danielsson, Henrik Pedersen, N. Rorsman, Erik Janzén and Urban Forsberg Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results Applied Physics Letters, 2015, 107(26), 262105. Fulltext Web of Science® Times Cited: 5	Altmetric usage: 2
Daniel Nilsson, Erik Janzén and Anelia Kakanakova-Georgieva Strain and morphology compliance during the intentional doping of high-Al-content AlGaN layers Applied Physics Letters, 2014, 105(8), 082106. Fulltext Web of Science® Times Cited: 4
Xuan Thang Trinh, Daniel Nilsson, Ivan Gueorguiev Ivanov, Erik Janzén, Anelia Kakanakova-Georgieva and Nguyen Tien Son Stable and metastable Si negative-U centers in AlGaN and AlN Applied Physics Letters, 2014, 105(16), 162106-1-162106-4. Fulltext Web of Science® Times Cited: 15
Anders Lundskog, Chih-Wei Hsu, K. Fredrik Karlsson, Supaluck Amloy, Daniel Nilsson, Urban Forsberg, Per-Olof Holtz and Erik Janzén Direct generation of linearly-polarized photon emission with designated orientations from site-controlled InGaN quantum dots Light: Science & Applications, 2014, 3, . Fulltext Web of Science® Times Cited: 31	Altmetric usage: 9
Anders Lundskog, Chih-Wei Hsu, Daniel Nilsson, K Fredrik Karlsson, Urban Forsberg, Per-Olof Holtz and Erik Janzén Controlled growth of hexagonal GaN pyramids by hot-wall MOCVD Journal of Crystal Growth, 2013, 363, 287-293. Fulltext Web of Science® Times Cited: 9
X. T. Trinh, D Nilsson, I. G. Ivanov, E Janzén, A Kakanakova-Georgieva and N.T. Son Negative-U behavior of the Si donor in Al_0.77Ga_0.23N Applied Physics Letters, 2013, 103(4), 042101. Fulltext Web of Science® Times Cited: 7
Anelia Kakanakova-Georgieva, Daniel Nilsson, Xuan Thang Trinh, Urban Forsberg, Son Tien Nguyen and Erik Janzén The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN Applied Physics Letters, 2013, 102(13), 132113. Fulltext Web of Science® Times Cited: 15
S Schoeche, P Kuehne, T Hofmann, M Schubert, Daniel Nilsson, Anelia Kakanakova-Gueorguie, Erik Janzén and Vanya Darakchieva Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect Applied Physics Letters, 2013, 103(21), 212107. Fulltext Web of Science® Times Cited: 7
Anelia Kakanakova-Gueorgieva, Daniel Nilsson and Erik Janzén High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures Journal of Crystal Growth, 2012, 338(1), 52-56. Fulltext Web of Science® Times Cited: 22
Anelia Kakanakova-Georgieva, Daniel Nilsson, M Stattin, Urban Forsberg, Å Haglund, A Larsson and Erik Janzén Mg-doped Al0.85Ga0.15N layers grown by hot-wall MOCVD with low resistivity at room temperature PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2010, 4(11), 311-313. Web of Science® Times Cited: 9