Publications for Daniela Gogova
Co-author map based on ISI articles 2007-
Journal Articles
Daniela Gogova, E. Talik, Ivan Gueorguiev Ivanov and Bo Monemar
Large-area free-standing GaN substrate grown by hydride vapor phase epitaxy on epitaxial lateral overgrown GaN template
Physica. B, Condensed matter, 2006, 371(1), 133-139.
Web of Science® Times Cited: 7 |
T Malinauskas, K Jarasiunas, R Aleksiejunas, Daniela Gogova, Bo Monemar, B Beaumont and P Gibart
Contribution of dislocations to carrier recombination and transport in highly excited ELO and HYPE GaN layers
Physica status solidi. B, Basic research, 2006, 243(7), 1426-1430.
Web of Science® Times Cited: 19 |
M. Misheva, Henrik Larsson, Daniela Gogova and Bo Monemar
Positron annihilation study of HVPE grown thick GaN layers
Physica status solidi. A, Applied research, 2005, 202(5), 713-717.
Web of Science® Times Cited: 6 |
Bo Monemar, Henrik Larsson, Carl Hemmingsson, Ivan Gueorguiev Ivanov and Daniela Gogova
Growth of thick GaN layers with hydride vapour phase epitaxy
Journal of Crystal Growth, 2005, 281(1), 17-31.
Web of Science® Times Cited: 32 |
Daniela Gogova, Henrik Larsson, A. Kasic, Gholam Reza Yazdi, Ivan Gueorguiev Ivanov, Rositsa Yakimova, Bo Monemar, E. Aujol, E. Frayssinet, J-P. Faurie, B. Beaumont and P. Gibart
High-Quality 2'' Bulk-Like Free-Standing GaN Grown by HydrideVapour Phase Epitaxy on a Si-doped Metal Organic Vapour Phase Epitaxial GaN Template with an Ultra Low Dislocation Density
Japanese Journal of Applied Physics, 2005, 44, 1181-1185.
Web of Science® Times Cited: 12 |
A. Kasic, Daniela Gogova, Henrik Larsson, Carl Hemmingsson, Ivan Gueorguiev Ivanov, Rositsa Yakimova, Bo Monemar and M. Heuken
Characterization of crack-free relaxed GaN grown on 2″ sapphire
Journal of Applied Physics, 2005, 98(7), 73525.
Web of Science® Times Cited: 4 |
Daniela Gogova, A. Kasic, Henrik Larsson, B. Pécz, Rositsa Yakimova, Ivan Gueorguiev Ivanov and Bo Monemar
Characterization of high-quality free-standing GaN grown by HVPE
Physica Scripta, 2004, T114, 18-21.
Web of Science® Times Cited: 2 |
Daniela Gogova, A Kasic, Henrik Larsson, B Pecz, Rositsa Yakimova, Björn Magnusson, Bo Monemar, F Tuomisto, K Saarinen, C Miskys, M Stutzmann, C Bundesmann and M Schubert
Optical and structural characteristics of virtually unstrained bulk-like GaN
Japanese Journal of Applied Physics, 2004, 43(4A), 1264-1268.
Web of Science® Times Cited: 19 |
A. Kasic, Daniela Gogova, Henrik Larsson, Carl Hemmingsson, Ivan Gueorguiev Ivanov, Bo Monemar, C. Bundesmann and M. Schubert
Micro-Raman scattering profiling studies on HVPE-grown free-standing GaN
Physica status solidi. A, Applied research, 2004, 201(12), 2773-2776.
Web of Science® Times Cited: 5 |
Daniela Gogova, A. Kasic, Henrik Larsson, Carl Hemmingsson, Bo Monemar, F. Tuomisto, K. Saarinen, L. Dobos, B. Pécz, P. Gibart and B. Beaumont
Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template
Journal of Applied Physics, 2004, 96(1), 799-806.
Web of Science® Times Cited: 34 |
Henrik Larsson, Daniela Gogova, A. Kasic, Rositsa Yakimova, Bo Monemar, C. R. Miskys and M. Stutzmann
Free-standing HVPE-GaN Layers
Physica Status Solidi. C, Current topics in solid state physics, 2003, 0(7), 1985-1988.
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Daniela Gogova, Henrik Larsson, Rositsa Yakimova, Z. Zolnai, Ivan Gueorguiev Ivanov and Bo Monemar
Fast growth of high quality GaN
Physica status solidi. A, Applied research, 2003, 200(1), 13-17.
Web of Science® Times Cited: 16 |
Daniela Gogova, K Gesheva, Anelia Kakanakova-Georgieva and M Surtchev
Investigation of the structure of tungsten oxide films obtained by chemical vapor deposition
European Physical Journal, 2000, 11(3), 167-174.
Web of Science® Times Cited: 16 |
Conference Articles
Rositsa Yakimova, Chariya Virojanadara, Daniela Gogova, Mikael Syväjärvi, D. Siche, Krister Larsson and Leif Johansson
Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates
SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010.
Web of Science® Times Cited: 12 Fulltext 
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Gholamreza Yazdi, K. Vassilevski, Jose Manuel Cordoba Gallego, Daniela Gogova, I. P. Nikitina, Mikael Syväjärvi, Magnus Odén, N.G. Wright and Rositsa Yakimova
Free standing AIN single crystal grown on pre-patterned and in situ patterned 4H-SiC substrates
Materials Science Forum, Vols. 645-648, 2010.
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T. Malinauskas, R. Aleksiejunas, K. Jarasiunas, B. Beaumont, P. Gibart, Anelia Kakanakova-Georgieva, Erik Janzén, Daniela Gogova, Bo Monemar and M. Heuken
All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE- grown GaN
Journal of Crystal Growth, Vol. 300, 2007.
Web of Science® Times Cited: 25
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Daniela Gogova, S. Kanev, Bo Monemar, Ivan Gueorguiev Ivanov, Rositsa Yakimova and E. Talik
Growth and characterization of free-standing HVPE GaN on two-step epitaxial lateral overgrown GaN template
, 2005.
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Ph.D., Lic. Theses
