Publications for Daniela Gogova
Co-author map based on ISI articles 2007-

Keywords

vertical vapor thickness temperature spectroscopy sapphire quality photoluminescence lateral hydride hvpe gan free-standing epitaxy epitaxial dislocation crystalline carrier bulk-like 0

Journal Articles

Daniela Gogova, E. Talik, Ivan Gueorguiev Ivanov and Bo Monemar
  Large-area free-standing GaN substrate grown by hydride vapor phase epitaxy on epitaxial lateral overgrown GaN template
  Physica. B, Condensed matter, 2006, 371(1), 133-139.
 Web of Science® Times Cited: 8

T Malinauskas, K Jarasiunas, R Aleksiejunas, Daniela Gogova, Bo Monemar, B Beaumont and P Gibart
  Contribution of dislocations to carrier recombination and transport in highly excited ELO and HYPE GaN layers
  Physica status solidi. B, Basic research, 2006, 243(7), 1426-1430.
 Web of Science® Times Cited: 20

M. Misheva, Henrik Larsson, Daniela Gogova and Bo Monemar
  Positron annihilation study of HVPE grown thick GaN layers
  Physica status solidi. A, Applied research, 2005, 202(5), 713-717.
 Web of Science® Times Cited: 6

Bo Monemar, Henrik Larsson, Carl Hemmingsson, Ivan Gueorguiev Ivanov and Daniela Gogova
  Growth of thick GaN layers with hydride vapour phase epitaxy
  Journal of Crystal Growth, 2005, 281(1), 17-31.
 Web of Science® Times Cited: 41

Daniela Gogova, Henrik Larsson, A. Kasic, Gholam Reza Yazdi, Ivan Gueorguiev Ivanov, Rositsa Yakimova, Bo Monemar, E. Aujol, E. Frayssinet, J-P. Faurie, B. Beaumont and P. Gibart
  High-Quality 2'' Bulk-Like Free-Standing GaN Grown by HydrideVapour Phase Epitaxy on a Si-doped Metal Organic Vapour Phase Epitaxial GaN Template with an Ultra Low Dislocation Density
  Japanese Journal of Applied Physics, 2005, 44, 1181-1185.
 Web of Science® Times Cited: 13

A. Kasic, Daniela Gogova, Henrik Larsson, Carl Hemmingsson, Ivan Gueorguiev Ivanov, Rositsa Yakimova, Bo Monemar and M. Heuken
  Characterization of crack-free relaxed GaN grown on 2″ sapphire
  Journal of Applied Physics, 2005, 98(7), 73525.
 Web of Science® Times Cited: 4

Daniela Gogova, A. Kasic, Henrik Larsson, B. Pécz, Rositsa Yakimova, Ivan Gueorguiev Ivanov and Bo Monemar
  Characterization of high-quality free-standing GaN grown by HVPE
  Physica Scripta, 2004, T114, 18-21.
 Web of Science® Times Cited: 2

Daniela Gogova, A Kasic, Henrik Larsson, B Pecz, Rositsa Yakimova, Björn Magnusson, Bo Monemar, F Tuomisto, K Saarinen, C Miskys, M Stutzmann, C Bundesmann and M Schubert
  Optical and structural characteristics of virtually unstrained bulk-like GaN
  Japanese Journal of Applied Physics, 2004, 43(4A), 1264-1268.
 Web of Science® Times Cited: 20

A. Kasic, Daniela Gogova, Henrik Larsson, Carl Hemmingsson, Ivan Gueorguiev Ivanov, Bo Monemar, C. Bundesmann and M. Schubert
  Micro-Raman scattering profiling studies on HVPE-grown free-standing GaN
  Physica status solidi. A, Applied research, 2004, 201(12), 2773-2776.
 Web of Science® Times Cited: 7

Daniela Gogova, A. Kasic, Henrik Larsson, Carl Hemmingsson, Bo Monemar, F. Tuomisto, K. Saarinen, L. Dobos, B. Pécz, P. Gibart and B. Beaumont
  Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template
  Journal of Applied Physics, 2004, 96(1), 799-806.
 Web of Science® Times Cited: 39

Daniela Gogova, Henrik Larsson, Rositsa Yakimova, Z. Zolnai, Ivan Gueorguiev Ivanov and Bo Monemar
  Fast growth of high quality GaN
  Physica status solidi. A, Applied research, 2003, 200(1), 13-17.
 Web of Science® Times Cited: 16

Henrik Larsson, Daniela Gogova, A. Kasic, Rositsa Yakimova, Bo Monemar, C. R. Miskys and M. Stutzmann
  Free-standing HVPE-GaN Layers
  Physica Status Solidi. C, Current topics in solid state physics, 2003, 0(7), 1985-1988.

Daniela Gogova, K Gesheva, Anelia Kakanakova-Georgieva and M Surtchev
  Investigation of the structure of tungsten oxide films obtained by chemical vapor deposition
  European Physical Journal: Applied physics, 2000, 11(3), 167-174.
 Web of Science® Times Cited: 17

Conference Articles

Rositsa Yakimova, Chariya Virojanadara, Daniela Gogova, Mikael Syväjärvi, D. Siche, Krister Larsson and Leif Johansson
  Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates
  SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010.


 Web of Science® Times Cited: 25  Fulltext PDF

Gholamreza Yazdi, K. Vassilevski, Jose Manuel Cordoba Gallego, Daniela Gogova, I. P. Nikitina, Mikael Syväjärvi, Magnus Odén, N.G. Wright and Rositsa Yakimova
  Free standing AIN single crystal grown on pre-patterned and in situ patterned 4H-SiC substrates
  Materials Science Forum, Vols. 645-648, 2010.


T. Malinauskas, R. Aleksiejunas, K. Jarasiunas, B. Beaumont, P. Gibart, Anelia Kakanakova-Georgieva, Erik Janzén, Daniela Gogova, Bo Monemar and M. Heuken
  All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE- grown GaN
  Journal of Crystal Growth, Vol. 300, 2007.


 Web of Science® Times Cited: 28

Daniela Gogova, S. Kanev, Bo Monemar, Ivan Gueorguiev Ivanov, Rositsa Yakimova and E. Talik
  Growth and characterization of free-standing HVPE GaN on two-step epitaxial lateral overgrown GaN template
  , 2005.