Publications for Christer Hallin
Co-author map based on ISI articles 2007-

Keywords

vacancy temperature susceptor substrates silicon sic resonance reactor lines hot-wall epitaxial dislocations diodes detected defects cvd 6h-sic 6h 4h-sic 4h

Journal Articles

Anne Henry, Jawad ul-Hassan, Peder Bergman, Christer Hallin and Erik Janzén
  Thick Silicon Carbide Homoepitaxial Layers Grown by CVD Techniques
  Chemical Vapor Deposition, 2006, 12(8-9), 475-482.
 Web of Science® Times Cited: 52

E Danielsson, M Domeij, HS Lee, CM Zetterling, M Ostling, A Schoner and Christer Hallin
  A 4H-SiC BJT with an epitaxially regrown extrinsic base layer
  Materials Science Forum, 2005, 483, 905-908.
 Web of Science® Times Cited: 7

HO Olafsson, Christer Hallin and EO Sveinbjornsson
  A comparison between SiO2/4H-SiC interface traps on (0001) and (1120) faces
  Materials Science Forum, 2004, 457-460, 1305-1308.

Z Zolnai, Son Tien Nguyen, Christer Hallin and Erik Janzén
  Annealing behavior of the carbon vacancy in electron-irradiated 4H-SiC
  Journal of Applied Physics, 2004, 96(4), 2406-2408.
 Web of Science® Times Cited: 31

H. Jacobson, Peder Bergman, Christer Hallin, Erik Janzén, T Tuomi and H Lendenmann
  Properties and origins of different stacking faults that cause degradation in SiC PiN diodes
  Journal of Applied Physics, 2004, 95(3), 1485-1488.
 Web of Science® Times Cited: 49

W.M. Vetter, J.Q. Liu, M. Dudley, M. Skowronski, H. Lendenmann and Christer Hallin
  Dislocation loops formed during the degradation of forward-biased 4H-SiC p-n junctions
  Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, 2003, 98(3), 220-224.
 Web of Science® Times Cited: 4

H. Jacobson, Jens Birch, Christer Hallin, Anne Henry, Rositsa Yakimova, T. Tuomi, Erik Janzén and Ulf Lindefelt
  Doping-induced strain in N-doped 4H-SiC crystals
  Applied Physics Letters, 2003, 82(21), 3689-3691.
 Web of Science® Times Cited: 20

Örjan Danielsson, Christer Hallin and Erik Janzén
  Reducing stress in silicon carbide epitaxial layers
  Journal of Crystal Growth, 2003, 252(1-3), 289-296.

Tien Son Nguyen, Christer Hallin and Erik Janzén
  Hole effective masses in 6H-SiC from optically detected cyclotron resonance
  Physical Review B. Condensed Matter and Materials Physics, 2002, 66(4), .
 Web of Science® Times Cited: 6

Matthias Wagner, NQ Thinh, Tien Son Nguyen, Weimin Chen, Erik Janzén, PG Baranov, EN Mokhov, Christer Hallin and JL Lindstrom
  Ligand hyperfine interaction at the neutral silicon vacancy in 4H- and 6H-SiC
  Physical Review B. Condensed Matter and Materials Physics, 2002, 66(15), .
 Web of Science® Times Cited: 27

K Robbie, ST Jemander, N Lin, Christer Hallin, Ragnar Erlandsson, Göran Hansson and LD Madsen
  Study of contact formation by high temperature deposition of Ni on SiC
  Materials Science Forum, 2000, 338-3, 981-984.
 Web of Science® Times Cited: 7

PM Lofgren, Christer Hallin, CY Gu and W Ji
  3-d thermal and flow modeling of hot wall epitaxial chemical vapor deposition reactors, heated by induction
  Materials Science Forum, 2000, 338-3, 153-156.
 Web of Science® Times Cited: 7

W Ji, PM Lofgren, Christer Hallin and CY Gu
  3-D computational modeling of SiC epitaxial growth in a hot wall reactor
  Materials Science Forum, 2000, 338-3, 149-152.
 Web of Science® Times Cited: 4

W. Ji, P.M. Lofgren, Christer Hallin, C.-Y. Gu and G. Zhou
  Computational modeling of SiC epitaxial growth in a hot wall reactor
  Journal of Crystal Growth, 2000, 220(4), 560-571.
 Web of Science® Times Cited: 7

Matthias Wagner, Björn Magnusson, Weimin Chen, Erik Janzén, E. Sörman, Christer Hallin and J. L. Lindström
  Electronic structure of the neutral silicon vacancy in 4H and 6H SiC
  Physical review. B, Condensed matter and materials physics, 2000, 62(24), 16555-16560.
 Web of Science® Times Cited: 36

E. Sörman, Son Tien Nguyen, Weimin Chen, O. Kordina, Christer Hallin and Erik Janzén
  Silicon vacancy related defect in 4H and 6H SiC
  Physical Review B. Condensed Matter and Materials Physics, 2000, 61(4), 2613-2620.
 Web of Science® Times Cited: 128

Son Tien Nguyen, P. N. Hai, Weimin Chen, Christer Hallin, Bo Monemar and Erik Janzén
  Hole effective masses in 4H SiC
  Physical Review B. Condensed Matter and Materials Physics, 2000, 61(16), .
 Web of Science® Times Cited: 15

Qamar Ul Wahab, A Ellison, Anne Henry, Erik Janzén, Christer Hallin, J Di Persio and R Martinez
  Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H-SiC Schottky diodes
  Applied Physics Letters, 2000, 76(19), 2725-2727.
 Web of Science® Times Cited: 98

Son Tien Nguyen, P. N. Hai, Matthias Wagner, Weimin Chen, A. Ellison, Christer Hallin, Bo Monemar and Erik Janzén
  Optically detected magnetic resonance studies of intrinsic defects in 6H-SiC
  Semiconductor Science and Technology, 1999, 14(12), 1141-1146.

Christer Hallin, Rositsa Yakimova, B. Pecz, Anelia Kakanakova-Georgieva, Ts. Marinova, L. Kassamakova, R. Kakanakov and Erik Janzén
  Improved Ni ohmic contact on n-type 4H-SiC
  Journal of Electronic Materials, 1997, 26(3), 119-122.

Anelia Kakanakova-Georgieva, T. Paskova, Rositsa Yakimova, Christer Hallin, Mikael Syväjärvi, E.P. Trifonova, M. Surtchev and Erik Janzén
  Structural properties of 6H-SiC epilayers grown by two different techniques
  Materials Science and Engineering B, 1997, 46(1-3), 345-348.

Olle Kordina, Christer Hallin, Anne Henry, Peder Bergman, Ivan Gueorguiev Ivanov, A. Ellison, Nguyen Tien Son and Erik Janzén
  Growth of SiC by "Hot-Wall" CVD and HTCVD
  Physica status solidi. B, Basic research, 1997, 202(1), 321-334.

Conference Articles

J.J. Sumakeris, Peder Bergman, M.K. Das, Christer Hallin, B.A. Hull, Erik Janzén, H. Lendenmann, M.J. OLoughlin, M.J. Paisley, S. Ha, M. Skowronski, J.W. Palmour, C.H. Carter and Jr
  Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices
  Mater. Sci. Forum, Vol. 527-529, 2006.


Jawad ul-Hassan, Christer Hallin, J. Peder Bergman and Erik Janzén
  Properties of Thick n- and p-type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on off- and on-axis Substrates
  Materials Science Forum, Vols. 527-529, 2006.


EO Sveinbjornsson, HO Olafsson, G Gudjonsson, F Allerstam, Patrik Nilsson, Mikael Syväjärvi, Rositsa Yakimova, Christer Hallin, T Rodle and R Jos
  High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material
  Materials Science Forum, Vols. 483-485, 2005.


 Web of Science® Times Cited: 6

Anelia Kakanakova-Georgieva, Ivan Gueorguiev Ivanov, Christer Hallin and Erik Janzén
  Hot-wall MOCVD grown homoepitaxial GaN layers with intense intrinsic excitonic structure
  Phys. Stat. Sol. (a), Vol. 202, 2005.


Anelia Kakanakova-Georgieva, A. Kasic, Christer Hallin, Bo Monemar and Erik Janzén
  Performance of III-nitride epitaxy in a low V-to-III gas-flow ratio range under nitrogen ambient in a hot-wall MOCVD system
  Phys. Stat. Sol. (c), Vol. 2, 2005.


Christer Hallin, Anelia Kakanakova-Georgieva, Per Persson and Erik Janzén
  High quality 6H-SiC (0001) homoepitaxial layers as substrate surface for growth of AlN epitaxial layers
  physica status solidi C, Vol. 2, 2005.


Erik Janzén, Peder Bergman, Örjan Danielsson, Urban Forsberg, Christer Hallin, Jawad ul-Hassan, Anne Henry, Ivan Gueorguiev Ivanov, Anelia Kakanakova-Gueorguie, Per Persson and Qamar Ul Wahab
  SiC and III-nitride Growth in a Hot-wall CVD Reactor
  Materials Science Forum, ISSN 0255-5476, volume 483-485, 2005.


 Web of Science® Times Cited: 6

Christer Hallin, Qamar Ul Wahab, Ivan Gueorguiev Ivanov, Peder Bergman and Erik Janzén
  Homoepitaxial On-Axis Growth of 4H- and 6H-SiC by CVD
  Materials Science Forum, Vols. 457-460, 2004.


 Web of Science® Times Cited: 14

Z. Zolnai, Son Tien Nguyen, Björn Magnusson, Christer Hallin and Erik Janzén
  Annealing behaviour of vacancy- and antisite-related defects in electron-irradiated 4H-SiC
  Mater. Sci. Forum, Vol. 457-460, 2004.


 Web of Science® Times Cited: 10

Anelia Kakanakova-Georgieva, Christer Hallin, Ivan Gueorguiev Ivanov and Erik Janzén
  AlGaN/GaN epitaxial growth on SiC in a hot-wall MOCVD system
  European Microwave Week,2004, 2004.


A. Syrkin, V. Dmitriev, V. Soukhoveev, M. Mynbaeva, R. Kakanakov, Christer Hallin and Erik Janzén
  4H-SiC Power Schottky Diodes. On the Way to Solve the Size Limiting Issues
  Mater. Sci. Forum, Vol. 457-460, 2004.


 Web of Science® Times Cited: 4

S.M. Bishop, E.A. Preble, Christer Hallin, Anne Henry, W. Sarney, H.-R. Chang, Liutauras Storasta, Henrik Jacobson, Z.J. Reitmeier, B.P. Wagner, Erik Janzén and R.F. Davis
  Characterization and comparison of 4H-SiC(112 over-bar 0) and 4H-SiC(0001) 8° off-axis substrates and homoepitaxial films
  Materials Research Society Symposium Proceedings, Vol. 815 Silicon Carbide 2004 - Materials, Processing and Devices,2004, 2004.


S.M. Bishop, E.A. Preble, Christer Hallin, Anne Henry, Liutauras Storasta, Henrik Jacobson, B.P. Wagner, Z.J. Reitmeier, Erik Janzén and R.F. Davis
  Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization
  Materials Science Forum, Vols. 457-460, 2004.


 Web of Science® Times Cited: 2

A Kakanakova-Georgieva, Urban Forsberg, Christer Hallin, Per Persson, Liutauras Storasta, Galia Pozina, Jens Birch, Lars Hultman and Erik Janzén
  Implementation of hot-wall MOCVD in the growth of high-quality GaN on SiC
  Materials Science Forum, Vols. 433-436, 2003.


 Web of Science® Times Cited: 3

Herbert Jacobson, JP Bergman, Christer Hallin, T Tuomi and Erik Janzén
  Properties of different stacking faults that cause degradation in SiC PiN diodes
  Materials Science Forum, Vols. 433-436, 2003.


Christer Hallin, Torbjörn Joelsson and Erik Janzén
  The effect of thermal gradients on SiC wafers
  Materials Science Forum, Vols. 433-436, 2003.


J. Osterman, L. Abtin, U. Zimmermann, M.S. Janson, S. Anand, Christer Hallin and A. Hallen
  Scanning spreading resistance microscopy of aluminum implanted 4H-SiC
  Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, 2003.


 Web of Science® Times Cited: 4

H Jacobson, Jens Birch, Ulf Lindefelt, Christer Hallin, Anne Henry, Rositsa Yakimova and Erik Janzén
  Doping-related strain in n-doped 4H-SiC crystals
  Materials Science Forum, Vols. 433-436, 2003.


Qamar Ul Wahab, H Kosugi, H Yano, Christer Hallin, T Kimoto and H Matsunami
  4H-and 6H-SiC MOSFETs fabricated on sloped sidewalls formed by molten KOH etching
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 3

Liutauras Storasta, JP Bergman, Christer Hallin and Erik Janzén
  Electrical activity of residual boron in silicon carbide
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 21

Tien Son Nguyen, Christer Hallin and Erik Janzén
  Hole and electron effective masses in 6H-SiC studied by optically detected cyclotron resonance
  Materials Science Forum(ISSN 0255-5476), Vols. 389-393, 2002.


 Web of Science® Times Cited: 1

Matthias Wagner, NQ Thinh, Nguyen Tien Son, PG Baranov, EN Mokhov, Christer Hallin, Weimin Chen and Erik Janzén
  The neutral silicon vacancy in SiC: Ligand hyperfine interaction
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 8

Son Tien Nguyen, P. N. Hai, Weimin Chen, Christer Hallin, Bo Monemar and Erik Janzén
  Hole Effective Masses in 4H SiC Determined by Optically Detected Cyclotron Resonance
  Materials Science Forum, Vol. 338 - 342, 2000.


Qamar Ul Wahab, A Ellison, Christer Hallin, Anne Henry, J Di Persio, R Martinez and Erik Janzén
  Influence of epitaxial growth and substrate induced defects on the breakdown of high-voltage 4H-SiC Schottky diodes
  Materials Science Forum(ISSN 0255-5476), Volume 338-3, 2000.


 Web of Science® Times Cited: 24

Matthias Wagner, E. Sörman, Christer Hallin, J. L. Lindström, Weimin Chen and Erik Janzén
  Properties of the neutral silicon vacancy in 6H SiC
  XXVIII International School on Physics of Semiconducting Compounds Jaszowiec '99, 1999.


Matthias Wagner, Björn Magnusson, E. Sörman, Christer Hallin, J. L. Lindström, Weimin Chen and Erik Janzén
  Zeeman spectroscopy of the neutral silicon vacancy in 6H and 4H SiC
  Physica B. Vol. 273-274, 1999.