Publications for Carl Hemmingsson
Co-author map based on ISI articles 2007-
Journal Articles
Carl Hemmingsson and Galia Pozina
Optimization of low temperature GaN buffer layers for halide vapor phase epitaxy growth of bulk GaN
Journal of Crystal Growth, 2013, 366, 61-66.
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Galia Pozina, Carl Hemmingsson, H Amano and Bo Monemar
Surface potential effect on excitons in AlGaN/GaN quantum well structures
Applied Physics Letters, 2013, 102(8), .
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Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, J Isoya, N Morishita, T Ohshima and Erik Janzén
Capacitance transient study of a bistable deep level in e(-)-irradiated n-type 4H-SiC
Journal of Physics D, 2012, 45(45), .
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Andreas Gällström, Björn Magnusson, Franziska Beyer, Adam Gali, Nguyen Son Tien, Stefano Leone, Ivan Gueorguiev Ivanov, Carl Hemmingsson, Anne Henry and Erik Janzén
Optical identification and electronic configuration of tungsten in 4H-and 6H-SiC
Physica. B, Condensed matter, 2012, 407(10), 1462-1466.
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Galia Pozina, Sergey Khromov, Carl Hemmingsson, Lars Hultman and Bo Monemar
Effect of silicon and oxygen doping on donor bound excitons in bulk GaN
Physical Review B. Condensed Matter and Materials Physics, 2011, 84(16), 165213.
Fulltext Web of Science® Times Cited: 3 |
Franziska Beyer, Carl Hemmingsson, Stefano Leone, Y.-C. Lin, Henrik Gällström, Anne Henry and Erik Janzén
Deep levels in iron doped n- and p-type 4H-SiC
Journal of Applied Physics, 2011, 110, 123701-1-123701-5.
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Sergey Khromov, Carl Hemmingsson, H Amano, Bo Monemar, Lars Hultman and Galia Pozina
Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaN
Physical Review B. Condensed Matter and Materials Physics, 2011, 84(7), 075324.
Fulltext Web of Science® Times Cited: 1 |
Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, David Lindgren, Lars Samuelson, Xianfeng Ni, Hadis Morkoc, Tanya Paskova, Zhaoxia Bi and Jonas Ohlsson
Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208(7), 1532-1534.
Fulltext Web of Science® Times Cited: 1 |
Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, Erik Janzén, J. Isoya, N. Morishita and T. Ohshima
Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n-type 4H-SiC
Journal of Applied Physics, 2011, 109(10), 103703.
Fulltext Web of Science® Times Cited: 1 |
Franziska Beyer, Carl Hemmingsson, Andreas Gällström, Stefano Leone, Henrik Pedersen, Anne Henry and Erik Janzén
Deep levels in tungsten doped n-type 3C-SiC
Applied Physics Letters, 2011, 98(15), 152104.
Fulltext Web of Science® Times Cited: 7 |
Carl Hemmingsson, Galia Pozina, Sergey Khromov and Bo Monemar
Growth of GaN nanotubes by halide vapor phase epitaxy
NANOTECHNOLOGY, 2011, 22(8), 085602.
Fulltext Web of Science® Times Cited: 1 |
Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, J Isoya, N Morishita, T Ohshima and Erik Janzén
Bistable defects in low-energy electron irradiated n-type 4H-SiC
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2010, 4(8-9), 227-229.
Web of Science® Times Cited: 3 |
Stefano Leone, Franziska Beyer, Anne Henry, Carl Hemmingsson, Olle Kordina and Erik Janzén
Chloride-Based SiC Epitaxial Growth toward Low Temperature Bulk Growth
Crystal Growth & Design, 2010, 10(8), 3743-3751.
Web of Science® Times Cited: 7 |
Tien Son Nguyen, Carl Hemmingsson, T. Paskova, K.R. Evans, A. Usui, N. Morishita, T. Ohshima, J. Isoya, Bo Monemar and Erik Janzén
Identification of the gallium vacancy-oxygen pair defect in GaN
Physical Review B. Condensed Matter and Materials Physics, 2009, 80(15), 153202.
Web of Science® Times Cited: 7 |
Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, T Kawashima, H Amano, I Akasaki, T Paskova, S Figge, D Hommel and A Usui
Evidence for Two Mg Related Acceptors in GaN
PHYSICAL REVIEW LETTERS, 2009, 102(23), 235501.
Web of Science® Times Cited: 21 |
Carl Hemmingsson, M Boota, R O Rahmatalla, M Junaid, Galia Pozina, Jens Birch and Bo Monemar
Growth and characterization of thick GaN layers grown by halide vapour phase epitaxy on lattice-matched AlInN templates
JOURNAL OF CRYSTAL GROWTH, 2009, 311(2), 292-297.
Web of Science® Times Cited: 3 |
Carl Hemmingsson, Galia Pozina, M. Heuken, B. Schineller and Bo Monemar
Modeling, optimization, and growth of GaN in a vertical halide vapor-phase epitaxy bulk reactor
Journal of Crystal Growth, 2008, 310(5), 906-910.
Web of Science® Times Cited: 6 |
Galia Pozina, Carl Hemmingsson, Peder Bergman, David Trinh, Lars Hultman and Bo Monemar
Time-resolved spectroscopy of freestanding GaN layers grown by halide vapour phase epitaxy
Superlattices and Microstructures, 2008, 43(5-6), 605-609.
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Galia Pozina, Carl Hemmingsson, Plamen P. Paskov, Peder Bergman, Bo Monemar, T. Kawashima, H. Amano, I. Akasaki and A. Usui
Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates
Applied Physics Letters, 2008, 92(15), 151904.
Fulltext Web of Science® Times Cited: 5 |
Galia Pozina, Carl Hemmingsson, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Bo Monemar, Lars Hultman and Erik Janzén
Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substrate
Journal of Applied Physics, 2008, 104(11), 113513.
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Carl Hemmingsson, Plamen Paskov, Galia Pozina, M. Heuken, B. Schineller and Bo Monemar
Hydride vapour phase epitaxy growth and characterization of thick GaN using a vertical HVPE reactor
Journal of Crystal Growth, 2007, 300(1), 32-36.
Web of Science® Times Cited: 12 |
Galia Pozina, Plamen Paskov, Peder Bergman, Carl Hemmingsson, Lars Hultman, Bo Monemar, H. Amano and A. Usui
Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates
Applied Physics Letters, 2007, 91(22), .
Web of Science® Times Cited: 9 |
Galia Pozina, Carl Hemmingsson, Peder Bergman, David Trinh, Lars Hultman and Bo Monemar
Dynamics of bound excitons versus thickness in freestanding GaN wafers grown by halide vapor phase epitaxy
Applied Physics Letters, 2007, 90(22), .
Web of Science® Times Cited: 7 |
Bo Monemar, Plamen Paskov, Peder Bergman, Tanja Paskova, Carl Hemmingsson, T Malinauskas, K Jarasiunas, P Gibart and B Beaumont
Time-resolved spectroscopy of excitons bound at shallow neutral donors in HVPE GaN
Physica. B, Condensed matter, 2006, 376, 482-485.
Web of Science® Times Cited: 3 |
Carl Hemmingsson, Plamen Paskov, Galia Pozina, M. Heuken, B. Schineller and Bo Monemar
Growth of bulk GaN in a vertical hydride vapour phase epitaxy reactor
Superlattices and Microstructures, 2006, 40( 4-6 SPEC. ISS.), 205-213.
Web of Science® Times Cited: 13 |
Bo Monemar, Henrik Larsson, Carl Hemmingsson, Ivan Gueorguiev Ivanov and Daniela Gogova
Growth of thick GaN layers with hydride vapour phase epitaxy
Journal of Crystal Growth, 2005, 281(1), 17-31.
Web of Science® Times Cited: 32 |
Bo Monemar, Tanja Paskova, Carl Hemmingsson, Henrik Larsson, Plamen Paskov, Ivan Gueorguiev Ivanov and Aleksander Kasic
Growth of thick GaN layers by hydride vapor phase epitaxy
Journal of Ceramic Processing Research, 2005, 6(2), 153-162.
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D. Gogova, Carl Hemmingsson, Bo Monemar, E. Talik, M. Kruczek, F. Tuomisto and K. Saarinen
Investigation of the structural and optical properties of free-standing GaN grown by HVPE
Journal of Physics D, 2005, 38(14), 2332-2337.
Web of Science® Times Cited: 12 |
A. Kasic, Daniela Gogova, Henrik Larsson, Carl Hemmingsson, Ivan Gueorguiev Ivanov, Rositsa Yakimova, Bo Monemar and M. Heuken
Characterization of crack-free relaxed GaN grown on 2″ sapphire
Journal of Applied Physics, 2005, 98(7), 73525.
Web of Science® Times Cited: 4 |
A. Kasic, Daniela Gogova, Henrik Larsson, Carl Hemmingsson, Ivan Gueorguiev Ivanov, Bo Monemar, C. Bundesmann and M. Schubert
Micro-Raman scattering profiling studies on HVPE-grown free-standing GaN
Physica status solidi. A, Applied research, 2004, 201(12), 2773-2776.
Web of Science® Times Cited: 5 |
Daniela Gogova, A. Kasic, Henrik Larsson, Carl Hemmingsson, Bo Monemar, F. Tuomisto, K. Saarinen, L. Dobos, B. Pécz, P. Gibart and B. Beaumont
Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template
Journal of Applied Physics, 2004, 96(1), 799-806.
Web of Science® Times Cited: 34 |
Carl Hemmingsson, Tien Son Nguyen, Olle Kordina and Erik Janzén
Metastable defects in 6H-SiC: Experiments and modeling
Journal of Applied Physics, 2002, 91(3), 1324.
Web of Science® Times Cited: 10 |
Carl Hemmingsson, Nguyen Tien Son, Olle Kordina, Peder Bergman, Erik Janzén, J.L. Lindström, S. Savage and N. Nordell
Deep-Level Defects in Electron-irradiated 4H SiC Epitaxial Layers
Journal of Applied Physics, 1997, 81(9), 6155-6159.
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Chapters in Books
Son Tien Nguyen, Matthias Wagner, Carl Hemmingsson, Liutauras Storasta, Björn Magnusson, Weimin Chen, S. Greulich-Weber, J.-M. Spaeth and Erik Janzén
Electronic structure of deep defects in SiC
Silicon Carbide: Recent Major Advances, Springer Verlag, 2004, .
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Conference Articles
Andreas Gällström, Björn Magnusson, Franziska Beyer, Adam Gali, Nguyen Tien Son, Stefano Leone, Ivan G. Ivanov, Anne Henry, Carl Hemmingsson and Erik Janzén
Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC
Materials Science Forum Vols 717 - 720, 2012.
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Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, Junichi Isoya, Norio Morishita, Takeshi Ohshima and Erik Janzén
Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC
<em>Materials Science Forum Vols. 679-680 (2011) pp 249-252</em>, 2011.
Web of Science® Times Cited: 1
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Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, David Lindgren, Lars Samuelson, Xianfeng Ni, Hadis Morkoç, Tanya Paskova, Zhaoxia Bi and Jonas Ohlsson
Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates
Proc. SPIE 7939, 2011.
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Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, H. Amano, I. Akasaki, S. Figge, D. Hommel, Tanja Paskova and A. Usiui
Mg related acceptors in GaN
Phys. Status Solidi C 7, 2010.
Web of Science® Times Cited: 3 Fulltext
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Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, J. Isoya, N. Morishita, T. Ohshima and Erik Janzén
Defects in low-energy electron-irradiated n-type 4H-SiC
Physica Scripta, vol. T141, 2010.
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Nguyen Tien Son, Carl Hemmingsson, N. Morishita, T. Ohshima, Tanja Paskova, K.R. Evans, A Usui, J. Isoya, Bo Monemar and Erik Janzén
Radiation-induced defects in GaN
Physica Scripta, Vol. T141, 2010.
Web of Science® Times Cited: 2
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A Scholle, S Greulich-Weber, D J As, Ch Mietze, Tien Son Nguyen, Carl Hemmingsson, Bo Monemar, Erik Janzén, U Gerstmann, S Sanna, E Rauls and W G Schmidt
Magnetic characterization of conductance electrons in GaN
Physica Status Solidi, Vol. 247, 2010.
Web of Science® Times Cited: 2
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Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, Junichi Isoya, Norio Morishita, Takeshi Ohshima and Erik Janzén
Metastable defects in low-energy electron irradiated n-type 4H-SiC
Materials Science Forum, Vols. 645-648, 2010.
Web of Science® Times Cited: 1 Fulltext
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Franziska Beyer, Stefano Leone, Carl Hemmingsson, Anne Henry and Erik Janzén
Deep levels in hetero-epitaxial as-grown 3C-SiC
AIP Conference Proceedings, Vol. 1292, 2010.
Web of Science® Times Cited: 1
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Bo Monemar, Galia Pozina, Plamen Paskov, Carl Hemmingsson, Peder Bergman, T. Kawashima, H. Amano, I. Akasaki and A. Usui
Acceptors in Mg doped GaN, optical properties and metastability
IWN 2008,2008, 2008.
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Bo Monemar, Plamen Paskov, Galia Pozina, Peder Bergman, Carl Hemmingsson, A.A. Toropov, Tatiana Choubina, T. Kawashima, H. Amano, I. Akasaki, A. Usui and Tanja Paskova
Properties of dopants and defects in GaN from bound exciton spectra
Meijo International Symposium on Nitride Semiconductors 2008,2008, 2008.
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Bo Monemar, Plamen Paskov, Galia Pozina, Peder Bergman, Carl Hemmingsson, T. Kawashima, H. Amano, I. Akasaki and A. Usui
Optical properties and acceptor states in Mg doped GaN
8^th Akasaki Symposium,2008, 2008.
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Galia Pozina, Carl Hemmingsson, Peder Bergman, T. Kawashima, H. Amano, I. Akasaki, A. Usui and Bo Monemar
Optical properties of metastable shallow acceptors in Mg-doped GaN layers grown by metal-organic vapor phase epitaxy
in PHYSICS OF SEMICONDUCTORS, vol 1199, 2008.
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Galia Pozina, Carl Hemmingsson, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Ivan Gueorguiev Ivanov, Bo Monemar, Lars Hultman and Erik Janzén
Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4- SiC substrate
8th International Conference on Physics of Light-Matter Coupling in Nanostructures,2008, 2008.
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Galia Pozina, Carl Hemmingsson, Peder Bergman, David Trinh, Lars Hultman and Bo Monemar
Time-resolved spectroscopy of freestanding GaN layers grown by halide vapour phase epitaxy
7th International Conference on Physics of Light-Matter Coupling in Nanostructures,2007, 2008.
Web of Science® Times Cited: 4
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Galia Pozina, Bo Monemar, Plamen Paskov, Carl Hemmingsson, Lars Hultman, H. Amano, I. Akasaki, Tanja Paskova, S. Figge, D. Hommel and A. Usui
Metastability of the UV luminescence in Mg-doped GaN layers grown by MOVPE on quasi-bulk GaN templates
, 2007.
Web of Science® Times Cited: 4
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A. Ellison, Björn Magnusson, Carl Hemmingsson, W. Magnusson, Tihomir Iakimov, Liutauras Storasta, Anne Henry, N. Henelius and Erik Janzén
HTCVD Growth of Semi-Insulating 4H-SiC Crystals With Low Defect Density
Mat. Res. Soc. Symp. Proc., Vol. 640, 2001.
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Fredrik Carlsson, Liutauras Storasta, Carl Hemmingsson, Peder Bergman and Erik Janzén
Electroluminescence from implanted and epitaxially grown pn-diodes
Materials Science Forum, Vols. 338-343, 2000.
Web of Science® Times Cited: 2
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Galia Pozina, Peder Bergman, Carl Hemmingsson and Erik Janzén
Time-resolved photoluminescence study of bound and free excitons in 4H SiC
Materials Science Forum, Vols. 338-343, 2000.
Web of Science® Times Cited: 1
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A Ellison, J Zhang, W Magnusson, Anne Henry, Qamar Ul Wahab, Peder Bergman, Carl Hemmingsson, Tien Son Nguyen and Erik Janzén
Fast SiC epitaxial growth in a chimney CVD reactor and HTCVD crystal growth developments
Materials science Forum, Vols. 338-342, 2000.
Web of Science® Times Cited: 28
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Ph.D. Theses
Ph.D., Lic. Theses
