Publications for Carl Hemmingsson
Co-author map based on ISI articles 2007-

Keywords

vapor transient thickness thick temperature spectroscopy spectra sic photoluminescence optical n-type k halide gan ev epitaxy energy defects bulk 4h-sic

Journal Articles

Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, Sergey Khromov, V. N. Izyumskaya, V. Avrutin, X. Li, H. Morkoc, H. Amano, M. Iwaya and I. Akasaki
  Properties of the main Mg-related acceptors in GaN from optical and structural studies
  Journal of Applied Physics, 2014, 115(5), 053507.
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Thien Duc Tran, Galia Pozina, Erik Janzén and Carl Hemmingsson
  Investigation of deep levels in bulk GaN material grown by halide vapor phase epitaxy
  Journal of Applied Physics, 2013, 114(15), .
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Bo Monemar, Sergey Khromov, Galia Pozina, Plamen Paskov, Peder Bergman, Carl Hemmingsson, Lars Hultman, Hiroshi Amano, Vitaliy Avrutin, Xing Li and Hadis Morkoc
  Luminescence of Acceptors in Mg-Doped GaN
  Japanese Journal of Applied Physics, 2013, 52(8), .
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Galia Pozina, Carl Hemmingsson, H Amano and Bo Monemar
  Surface potential effect on excitons in AlGaN/GaN quantum well structures
  Applied Physics Letters, 2013, 102(8), .

Carl Hemmingsson and Galia Pozina
  Optimization of low temperature GaN buffer layers for halide vapor phase epitaxy growth of bulk GaN
  Journal of Crystal Growth, 2013, 366, 61-66.
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 Web of Science® Times Cited: 2

Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, J Isoya, N Morishita, T Ohshima and Erik Janzén
  Capacitance transient study of a bistable deep level in e(-)-irradiated n-type 4H-SiC
  Journal of Physics D: Applied Physics, 2012, 45(45), .
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Andreas Gällström, Björn Magnusson, Franziska Beyer, Adam Gali, Nguyen Son Tien, Stefano Leone, Ivan Gueorguiev Ivanov, Carl Hemmingsson, Anne Henry and Erik Janzén
  Optical identification and electronic configuration of tungsten in 4H-and 6H-SiC
  Physica. B, Condensed matter, 2012, 407(10), 1462-1466.
 Web of Science® Times Cited: 2

Galia Pozina, Sergey Khromov, Carl Hemmingsson, Lars Hultman and Bo Monemar
  Effect of silicon and oxygen doping on donor bound excitons in bulk GaN
  Physical Review B. Condensed Matter and Materials Physics, 2011, 84(16), 165213.
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 Web of Science® Times Cited: 5

Franziska Beyer, Carl Hemmingsson, Stefano Leone, Y.-C. Lin, Henrik Gällström, Anne Henry and Erik Janzén
  Deep levels in iron doped n- and p-type 4H-SiC
  Journal of Applied Physics, 2011, 110, 123701-1-123701-5.
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Sergey Khromov, Carl Hemmingsson, H Amano, Bo Monemar, Lars Hultman and Galia Pozina
  Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaN
  Physical Review B. Condensed Matter and Materials Physics, 2011, 84(7), 075324.
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 Web of Science® Times Cited: 6

Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, David Lindgren, Lars Samuelson, Xianfeng Ni, Hadis Morkoc, Tanya Paskova, Zhaoxia Bi and Jonas Ohlsson
  Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates
  PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208(7), 1532-1534.
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 Web of Science® Times Cited: 2

Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, Erik Janzén, J. Isoya, N. Morishita and T. Ohshima
  Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n-type 4H-SiC
  Journal of Applied Physics, 2011, 109(10), 103703.
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 Web of Science® Times Cited: 1

Franziska Beyer, Carl Hemmingsson, Andreas Gällström, Stefano Leone, Henrik Pedersen, Anne Henry and Erik Janzén
  Deep levels in tungsten doped n-type 3C-SiC
  Applied Physics Letters, 2011, 98(15), 152104.
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 Web of Science® Times Cited: 9

Carl Hemmingsson, Galia Pozina, Sergey Khromov and Bo Monemar
  Growth of GaN nanotubes by halide vapor phase epitaxy
  NANOTECHNOLOGY, 2011, 22(8), 085602.
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 Web of Science® Times Cited: 5

Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, J Isoya, N Morishita, T Ohshima and Erik Janzén
  Bistable defects in low-energy electron irradiated n-type 4H-SiC
  PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2010, 4(8-9), 227-229.
 Web of Science® Times Cited: 3

Stefano Leone, Franziska Beyer, Anne Henry, Carl Hemmingsson, Olle Kordina and Erik Janzén
  Chloride-Based SiC Epitaxial Growth toward Low Temperature Bulk Growth
  Crystal Growth & Design, 2010, 10(8), 3743-3751.
 Web of Science® Times Cited: 9

Tien Son Nguyen, Carl Hemmingsson, T. Paskova, K.R. Evans, A. Usui, N. Morishita, T. Ohshima, J. Isoya, Bo Monemar and Erik Janzén
  Identification of the gallium vacancy-oxygen pair defect in GaN
  Physical Review B. Condensed Matter and Materials Physics, 2009, 80(15), 153202.
 Web of Science® Times Cited: 10

Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, T Kawashima, H Amano, I Akasaki, T Paskova, S Figge, D Hommel and A Usui
  Evidence for Two Mg Related Acceptors in GaN
  PHYSICAL REVIEW LETTERS, 2009, 102(23), 235501.
 Web of Science® Times Cited: 32

Carl Hemmingsson, M Boota, R O Rahmatalla, M Junaid, Galia Pozina, Jens Birch and Bo Monemar
  Growth and characterization of thick GaN layers grown by halide vapour phase epitaxy on lattice-matched AlInN templates
  JOURNAL OF CRYSTAL GROWTH, 2009, 311(2), 292-297.
 Web of Science® Times Cited: 5

Carl Hemmingsson, Galia Pozina, M. Heuken, B. Schineller and Bo Monemar
  Modeling, optimization, and growth of GaN in a vertical halide vapor-phase epitaxy bulk reactor
  Journal of Crystal Growth, 2008, 310(5), 906-910.
 Web of Science® Times Cited: 7

Galia Pozina, Carl Hemmingsson, Peder Bergman, David Trinh, Lars Hultman and Bo Monemar
  Time-resolved spectroscopy of freestanding GaN layers grown by halide vapour phase epitaxy
  Superlattices and Microstructures, 2008, 43(5-6), 605-609.
 Web of Science® Times Cited: 4

Galia Pozina, Carl Hemmingsson, Plamen P. Paskov, Peder Bergman, Bo Monemar, T. Kawashima, H. Amano, I. Akasaki and A. Usui
  Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates
  Applied Physics Letters, 2008, 92(15), 151904.
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 Web of Science® Times Cited: 6

Galia Pozina, Carl Hemmingsson, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Bo Monemar, Lars Hultman and Erik Janzén
  Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substrate
  Journal of Applied Physics, 2008, 104(11), 113513.
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 Web of Science® Times Cited: 2

Carl Hemmingsson, Plamen Paskov, Galia Pozina, M. Heuken, B. Schineller and Bo Monemar
  Hydride vapour phase epitaxy growth and characterization of thick GaN using a vertical HVPE reactor
  Journal of Crystal Growth, 2007, 300(1), 32-36.
 Web of Science® Times Cited: 13

Galia Pozina, Plamen Paskov, Peder Bergman, Carl Hemmingsson, Lars Hultman, Bo Monemar, H. Amano and A. Usui
  Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates
  Applied Physics Letters, 2007, 91(22), .
 Web of Science® Times Cited: 11

Galia Pozina, Carl Hemmingsson, Peder Bergman, David Trinh, Lars Hultman and Bo Monemar
  Dynamics of bound excitons versus thickness in freestanding GaN wafers grown by halide vapor phase epitaxy
  Applied Physics Letters, 2007, 90(22), .
 Web of Science® Times Cited: 8

Bo Monemar, Plamen Paskov, Peder Bergman, Tanja Paskova, Carl Hemmingsson, T Malinauskas, K Jarasiunas, P Gibart and B Beaumont
  Time-resolved spectroscopy of excitons bound at shallow neutral donors in HVPE GaN
  Physica. B, Condensed matter, 2006, 376, 482-485.
 Web of Science® Times Cited: 5

Carl Hemmingsson, Plamen Paskov, Galia Pozina, M. Heuken, B. Schineller and Bo Monemar
  Growth of bulk GaN in a vertical hydride vapour phase epitaxy reactor
  Superlattices and Microstructures, 2006, 40( 4-6 SPEC. ISS.), 205-213.
 Web of Science® Times Cited: 14

Bo Monemar, Henrik Larsson, Carl Hemmingsson, Ivan Gueorguiev Ivanov and Daniela Gogova
  Growth of thick GaN layers with hydride vapour phase epitaxy
  Journal of Crystal Growth, 2005, 281(1), 17-31.
 Web of Science® Times Cited: 40

Bo Monemar, Tanja Paskova, Carl Hemmingsson, Henrik Larsson, Plamen Paskov, Ivan Gueorguiev Ivanov and Aleksander Kasic
  Growth of thick GaN layers by hydride vapor phase epitaxy
  Journal of Ceramic Processing Research, 2005, 6(2), 153-162.

D. Gogova, Carl Hemmingsson, Bo Monemar, E. Talik, M. Kruczek, F. Tuomisto and K. Saarinen
  Investigation of the structural and optical properties of free-standing GaN grown by HVPE
  Journal of Physics D: Applied Physics, 2005, 38(14), 2332-2337.
 Web of Science® Times Cited: 15

A. Kasic, Daniela Gogova, Henrik Larsson, Carl Hemmingsson, Ivan Gueorguiev Ivanov, Rositsa Yakimova, Bo Monemar and M. Heuken
  Characterization of crack-free relaxed GaN grown on 2″ sapphire
  Journal of Applied Physics, 2005, 98(7), 73525.
 Web of Science® Times Cited: 4

A. Kasic, Daniela Gogova, Henrik Larsson, Carl Hemmingsson, Ivan Gueorguiev Ivanov, Bo Monemar, C. Bundesmann and M. Schubert
  Micro-Raman scattering profiling studies on HVPE-grown free-standing GaN
  Physica status solidi. A, Applied research, 2004, 201(12), 2773-2776.
 Web of Science® Times Cited: 6

Daniela Gogova, A. Kasic, Henrik Larsson, Carl Hemmingsson, Bo Monemar, F. Tuomisto, K. Saarinen, L. Dobos, B. Pécz, P. Gibart and B. Beaumont
  Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template
  Journal of Applied Physics, 2004, 96(1), 799-806.
 Web of Science® Times Cited: 38

Carl Hemmingsson, Tien Son Nguyen, Olle Kordina and Erik Janzén
  Metastable defects in 6H-SiC: Experiments and modeling
  Journal of Applied Physics, 2002, 91(3), 1324.
 Web of Science® Times Cited: 10

Carl Hemmingsson, Nguyen Tien Son, Olle Kordina, Peder Bergman, Erik Janzén, J.L. Lindström, S. Savage and N. Nordell
  Deep-Level Defects in Electron-irradiated 4H SiC Epitaxial Layers
  Journal of Applied Physics, 1997, 81(9), 6155-6159.

Chapters in Books

Son Tien Nguyen, Matthias Wagner, Carl Hemmingsson, Liutauras Storasta, Björn Magnusson, Weimin Chen, S. Greulich-Weber, J.-M. Spaeth and Erik Janzén
  Electronic structure of deep defects in SiC
  Silicon Carbide: Recent Major Advances, Springer Verlag, 2004, -899.


Conference Articles

Andreas Gällström, Björn Magnusson, Franziska Beyer, Adam Gali, Nguyen Tien Son, Stefano Leone, Ivan G. Ivanov, Anne Henry, Carl Hemmingsson and Erik Janzén
  Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC
  Materials Science Forum Vols 717 - 720, 2012.


Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, Junichi Isoya, Norio Morishita, Takeshi Ohshima and Erik Janzén
  Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC
  <em>Materials Science Forum Vols. 679-680 (2011) pp 249-252</em>, 2011.


 Web of Science® Times Cited: 1

Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, David Lindgren, Lars Samuelson, Xianfeng Ni, Hadis Morkoç, Tanya Paskova, Zhaoxia Bi and Jonas Ohlsson
  Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates
  Gallium Nitride Materials and Devices VI, 2011.


 Web of Science® Times Cited: 1  Fulltext PDF

Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, H. Amano, I. Akasaki, S. Figge, D. Hommel, Tanja Paskova and A. Usiui
  Mg related acceptors in GaN
  Phys. Status Solidi C 7, 2010.


 Web of Science® Times Cited: 4  Fulltext PDF

Franziska Beyer, Stefano Leone, Carl Hemmingsson, Anne Henry and Erik Janzén
  Deep levels in hetero-epitaxial as-grown 3C-SiC
  AIP Conference Proceedings, Vol. 1292, 2010.


 Web of Science® Times Cited: 1

Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, J. Isoya, N. Morishita, T. Ohshima and Erik Janzén
  Defects in low-energy electron-irradiated n-type 4H-SiC
  Physica Scripta, vol. T141, 2010.


Nguyen Tien Son, Carl Hemmingsson, N. Morishita, T. Ohshima, Tanja Paskova, K.R. Evans, A Usui, J. Isoya, Bo Monemar and Erik Janzén
  Radiation-induced defects in GaN
  Physica Scripta, Vol. T141, 2010.


 Web of Science® Times Cited: 2

A Scholle, S Greulich-Weber, D J As, Ch Mietze, Tien Son Nguyen, Carl Hemmingsson, Bo Monemar, Erik Janzén, U Gerstmann, S Sanna, E Rauls and W G Schmidt
  Magnetic characterization of conductance electrons in GaN
  Physica Status Solidi, Vol. 247, 2010.


 Web of Science® Times Cited: 2

Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, Junichi Isoya, Norio Morishita, Takeshi Ohshima and Erik Janzén
  Metastable defects in low-energy electron irradiated n-type 4H-SiC
  Materials Science Forum, Vols. 645-648, 2010.


 Web of Science® Times Cited: 1  Fulltext PDF

Bo Monemar, Galia Pozina, Plamen Paskov, Carl Hemmingsson, Peder Bergman, T. Kawashima, H. Amano, I. Akasaki and A. Usui
  Acceptors in Mg doped GaN, optical properties and metastability
  IWN 2008,2008, 2008.


Bo Monemar, Plamen Paskov, Galia Pozina, Peder Bergman, Carl Hemmingsson, A.A. Toropov, Tatiana Choubina, T. Kawashima, H. Amano, I. Akasaki, A. Usui and Tanja Paskova
  Properties of dopants and defects in GaN from bound exciton spectra
  Meijo International Symposium on Nitride Semiconductors 2008,2008, 2008.


Bo Monemar, Plamen Paskov, Galia Pozina, Peder Bergman, Carl Hemmingsson, T. Kawashima, H. Amano, I. Akasaki and A. Usui
  Optical properties and acceptor states in Mg doped GaN
  8^th Akasaki Symposium,2008, 2008.


Galia Pozina, Carl Hemmingsson, Peder Bergman, T. Kawashima, H. Amano, I. Akasaki, A. Usui and Bo Monemar
  Optical properties of metastable shallow acceptors in Mg-doped GaN layers grown by metal-organic vapor phase epitaxy
  in PHYSICS OF SEMICONDUCTORS, vol 1199, 2008.


Galia Pozina, Carl Hemmingsson, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Ivan Gueorguiev Ivanov, Bo Monemar, Lars Hultman and Erik Janzén
  Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4- SiC substrate
  8th International Conference on Physics of Light-Matter Coupling in Nanostructures,2008, 2008.


Galia Pozina, Bo Monemar, Plamen Paskov, Carl Hemmingsson, Lars Hultman, H. Amano, I. Akasaki, Tanja Paskova, S. Figge, D. Hommel and A. Usui
  Metastability of the UV luminescence in Mg-doped GaN layers grown by MOVPE on quasi-bulk GaN templates
  , 2007.


 Web of Science® Times Cited: 5

A. Ellison, Björn Magnusson, Carl Hemmingsson, W. Magnusson, Tihomir Iakimov, Liutauras Storasta, Anne Henry, N. Henelius and Erik Janzén
  HTCVD Growth of Semi-Insulating 4H-SiC Crystals With Low Defect Density
  Mat. Res. Soc. Symp. Proc., Vol. 640, 2001.


Fredrik Carlsson, Liutauras Storasta, Carl Hemmingsson, Peder Bergman and Erik Janzén
  Electroluminescence from implanted and epitaxially grown pn-diodes
  Materials Science Forum, Vols. 338-343, 2000.


 Web of Science® Times Cited: 2

Galia Pozina, Peder Bergman, Carl Hemmingsson and Erik Janzén
  Time-resolved photoluminescence study of bound and free excitons in 4H SiC
  Materials Science Forum, Vols. 338-343, 2000.


 Web of Science® Times Cited: 1

A Ellison, J Zhang, W Magnusson, Anne Henry, Qamar Ul Wahab, Peder Bergman, Carl Hemmingsson, Tien Son Nguyen and Erik Janzén
  Fast SiC epitaxial growth in a chimney CVD reactor and HTCVD crystal growth developments
  Materials science Forum, Vols. 338-342, 2000.


 Web of Science® Times Cited: 29

Ph.D. Theses

Franziska C. Beyer
  Deep levels in SiC
  2011.


  Fulltext PDF