Publications for Bo Monemar
Co-author map based on ISI articles 2007-

Publications mentioned in social media 3 times*

Keywords

vapor temperature substrates spectra sapphire quantum pl photoluminescence p>we optical mg inn gan excitons exciton ev epitaxy energy emission bulk

Journal Articles

Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, Sergey Khromov, V. N. Izyumskaya, V. Avrutin, X. Li, H. Morkoc, H. Amano, M. Iwaya and I. Akasaki
  Properties of the main Mg-related acceptors in GaN from optical and structural studies
  Journal of Applied Physics, 2014, 115(5), 053507.
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Mengyao Xie, Ben Sedrine, L. Hong, Bo Monemar, S. Schöche, T. Hofmann, M. Schubert, X Wang, A. Yoshikawa, K. Wang, T. Araki, Vanya Darakchieva and Y. Nanishi
  Effect of Mg doping on the structural and free-charge carrier properties of InN
  Journal of Applied Physics, 2014, 115(16), 163504.
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Sergey Khromov, Bo Monemar, V. Avrutin, H. Morkoc, Lars Hultman and Galia Pozina
  Correlation between Si doping and stacking fault related luminescence in homoepitaxial m-plane GaN
  Applied Physics Letters, 2013, 103, 192101.
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A. A. Toropov, E. A. Shevchenko, T. V. Shubina, V. N. Jmerik, D. V. Nechaev, M. A. Yagovkina, A. A. Sitnikova, S. V. Ivanov, Galia Pozina, J. P. Bergman and Bo Monemar
  Suppression of the quantum-confined Stark effect in AlxGa1-xN/AlyGa1-yN corrugated quantum wells
  Journal of Applied Physics, 2013, 114(12), .
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Bo Monemar, Sergey Khromov, Galia Pozina, Plamen Paskov, Peder Bergman, Carl Hemmingsson, Lars Hultman, Hiroshi Amano, Vitaliy Avrutin, Xing Li and Hadis Morkoc
  Luminescence of Acceptors in Mg-Doped GaN
  Japanese Journal of Applied Physics, 2013, 52(8), .
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Volodymyr Khranovskyy, Alexey M. Glushenkov, Y Chen, A Khalid, H Zhang, Lars Hultman, Bo Monemar and Rositsa Yakimova
  Crystal phase engineered quantum wells in ZnO nanowires
  Nanotechnology, 2013, 24(21), .
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Galia Pozina, Carl Hemmingsson, H Amano and Bo Monemar
  Surface potential effect on excitons in AlGaN/GaN quantum well structures
  Applied Physics Letters, 2013, 102(8), .

Kristian Storm, Filip Halvardsson, Magnus Heurlin, David Lindgren, Anders Gustafsson, Phillip M. Wu, Bo Monemar and Lars Samuelson
  Spatially resolved Hall effect measurement in a single semiconductor nanowire
 
Altmetric usage: 1

  Nature Nanotechnology, 2012, 7(11), 718-722.
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 Web of Science® Times Cited: 23

Sergey Khromov, Bo Monemar, V. Avrutin, Xing Li, H. Morkoç, Lars Hultman and Galia Pozina
  Optical and structural studies of homoepitaxially grown m-plane GaN
  Applied Physics Letters, 2012, 100(17), 172108.
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 Web of Science® Times Cited: 3

N. Ben Sedrine, Vanya Darakchieva, D Lindgren, Bo Monemar, S. B. Che, Y Ishitani and A Yoshikawa
  Optical properties of InN/In0.73Ga0.27N multiple quantum wells studied by spectroscopic ellipsometry
  Physica Status Solidi. C, Current topics in solid state physics, 2011, 8(5), 1629-1632.
 Web of Science® Times Cited: 1

Jan Junis Rindermann, Galia Pozina, Bo Monemar, Lars Hultman, Hiroshi Amano and Pavlos G. Lagoudakis
  Dependence of Resonance Energy Transfer on Exciton Dimensionality
 
Altmetric usage: 2

  Physical Review Letters, 2011, 107(23), 236805.
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 Web of Science® Times Cited: 7

Galia Pozina, Sergey Khromov, Carl Hemmingsson, Lars Hultman and Bo Monemar
  Effect of silicon and oxygen doping on donor bound excitons in bulk GaN
  Physical Review B. Condensed Matter and Materials Physics, 2011, 84(16), 165213.
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 Web of Science® Times Cited: 5

T. V. Shubina, A. .A. Toropov, Galia Pozina, Peder Bergman, M. M. Glazov, N. A. Gippius, P. Disseix, J. Leymarie, B. Gil and Bo Monemar
  Excitonic parameters of GaN studied by time-of-flight spectroscopy
  Applied Physics Letters, 2011, 99(10), 101108.
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 Web of Science® Times Cited: 2

Sergey Khromov, Carl Hemmingsson, H Amano, Bo Monemar, Lars Hultman and Galia Pozina
  Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaN
  Physical Review B. Condensed Matter and Materials Physics, 2011, 84(7), 075324.
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 Web of Science® Times Cited: 6

Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, David Lindgren, Lars Samuelson, Xianfeng Ni, Hadis Morkoc, Tanya Paskova, Zhaoxia Bi and Jonas Ohlsson
  Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates
  PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208(7), 1532-1534.
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 Web of Science® Times Cited: 2

T V Shubina, M M Glazov, N A Gippius, A A Toropov, D Lagarde, P Disseix, J Leymarie, B Gil, Galia Pozina, J Peder Bergman and Bo Monemar
  Delay and distortion of slow light pulses by excitons in ZnO
  Physical Review B. Condensed Matter and Materials Physics, 2011, 84(7), 075202.
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 Web of Science® Times Cited: 4

Carl Hemmingsson, Galia Pozina, Sergey Khromov and Bo Monemar
  Growth of GaN nanotubes by halide vapor phase epitaxy
  NANOTECHNOLOGY, 2011, 22(8), 085602.
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 Web of Science® Times Cited: 5

Bo Monemar, Plamen Paskov, Peder Bergman, Galia Pozina, A.A. Toropov, T.V. Shubina, T. Malinauskas and A. Usui
  Transient photoluminescence of shallow donor bound excitons in GaN
  Physical Review B. Condensed Matter and Materials Physics, 2010, 82, 235202.
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 Web of Science® Times Cited: 18

V.N. Jmerik, A.M. Mizerov, T.V. Shubina, A.A. Toropov, K.G. Belyaev, A.A. Sitnikova, M.A. Yagovkina, P.S. Kopev, E.V. Lutsenko, A.V. Danilchyk, N.V. Rzheutskii, G.P. Yablonskii, Bo Monemar and S.V. Ivanov
  Optically pumped lasing at 300.4 nm in AlGaN MQW structures grown by plasma-assisted molecular beam epitaxy on c-Al2O3
  PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2010, 207(6), 1313-1317.
 Web of Science® Times Cited: 4

Bernard Gil, Pierre Bigenwald, Plamen Paskov and Bo Monemar
  Internal structure of acceptor-bound excitons in wide-band-gap wurtzite semiconductors
  PHYSICAL REVIEW B, 2010, 81(8), 085211.
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 Web of Science® Times Cited: 5

Vanya Darakchieva, K Lorenz, N P Barradas, E Alves, Bo Monemar, M Schubert, N Franco, C L Hsiao, L C Chen, W J Schaff, L W Tu, T Yamaguchi and Y Nanishi
  Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material
  APPLIED PHYSICS LETTERS, 2010, 96(8), 081907.
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 Web of Science® Times Cited: 20

Vanya Darakchieva, M Schubert, T Hofmann, Bo Monemar, Ching-Lien Hsiao, Ting-Wei Liu, Li-Chyong Chen, W J Schaff, Y Takagi and Y Nanishi
  Electron accumulation at nonpolar and semipolar surfaces of wurtzite InN from generalized infrared ellipsometry
  APPLIED PHYSICS LETTERS, 2009, 95(20), 202103.
 Web of Science® Times Cited: 14

Tien Son Nguyen, Carl Hemmingsson, T. Paskova, K.R. Evans, A. Usui, N. Morishita, T. Ohshima, J. Isoya, Bo Monemar and Erik Janzén
  Identification of the gallium vacancy-oxygen pair defect in GaN
  Physical Review B. Condensed Matter and Materials Physics, 2009, 80(15), 153202.
 Web of Science® Times Cited: 10

M Esmaeili, M Gholami, H Haratizadeh, Bo Monemar, Per-Olof Holtz, S Kamiyama, H Amano and I Akasaki
  Experimental and theoretical investigations of optical properties of GaN/AlGaN MQW nanostructures. Impact of built-in polarization fields
  OPTO-ELECTRONICS REVIEW, 2009, 17(4), 293-299.
 Web of Science® Times Cited: 2

Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, T Kawashima, H Amano, I Akasaki, T Paskova, S Figge, D Hommel and A Usui
  Evidence for Two Mg Related Acceptors in GaN
  PHYSICAL REVIEW LETTERS, 2009, 102(23), 235501.
 Web of Science® Times Cited: 32

Carl Hemmingsson, M Boota, R O Rahmatalla, M Junaid, Galia Pozina, Jens Birch and Bo Monemar
  Growth and characterization of thick GaN layers grown by halide vapour phase epitaxy on lattice-matched AlInN templates
  JOURNAL OF CRYSTAL GROWTH, 2009, 311(2), 292-297.
 Web of Science® Times Cited: 5

Vanya Darakchieva, T Hofmann, M Schubert, Bo Sernelius, Bo Monemar, Per Persson, Finn Giuliani, E Alves, H Lu and W J Schaff
  Free electron behavior in InN: On the role of dislocations and surface electron accumulation
  Applied Physics Letters, 2009, 94(2), 022109.
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 Web of Science® Times Cited: 24

M Esmaeili, H Haratizadeh, M Gholami and Bo Monemar
  EFFECT OF THE EXTRINSIC AND TEMPORAL CARRIERS ON RADIATIVE RECOMBINATION OF III-NITRIDE NANOSTRUCTURES
  IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY TRANSACTION A-SCIENCE, 2008, 32(A3), 207-213.

A.M. Fischer, S. Srinivasan, F.A. Ponce, Bo Monemar, F. Bertram and J. Christen
  Time-resolved cathodoluminescence of Mg-doped GaN
  Applied Physics Letters, 2008, 93(15), .
 Web of Science® Times Cited: 7

Carl Hemmingsson, Galia Pozina, M. Heuken, B. Schineller and Bo Monemar
  Modeling, optimization, and growth of GaN in a vertical halide vapor-phase epitaxy bulk reactor
  Journal of Crystal Growth, 2008, 310(5), 906-910.
 Web of Science® Times Cited: 7

Vanya Darakchieva, Bo Monemar, A. Usui, M. Saenger and M. Schubert
  Lattice parameters of bulk GaN fabricated by halide vapor phase epitaxy
  Journal of Crystal Growth, 2008, 310(5), 959-965.
 Web of Science® Times Cited: 6

Bo Monemar, Plamen Paskov, Peder Bergman, A.A. Toropov, T.V. Shubina and A. Usui
  Recombination dynamics of free and bound excitons in bulk GaN
  Superlattices and Microstructures, 2008, 43(5-6), 610-614.
 Web of Science® Times Cited: 1

Galia Pozina, Carl Hemmingsson, Peder Bergman, David Trinh, Lars Hultman and Bo Monemar
  Time-resolved spectroscopy of freestanding GaN layers grown by halide vapour phase epitaxy
  Superlattices and Microstructures, 2008, 43(5-6), 605-609.
 Web of Science® Times Cited: 4

M. Gonschorek, J.-F. Carlin, E. Feltin, M.A. Py, N. Grandjean, Vanya Darakchieva, Bo Monemar, M. Lorenz and G. Ramm
  Two-dimensional electron gas density in Al1-x InMx N/AlN/GaN heterostructures (0.03=x=0.23)
  Journal of Applied Physics, 2008, 103(9), 093714.
 Web of Science® Times Cited: 79

Tatiana Shubina, M. M. Glazov, A. A. Toropov, N. A. Gippius, A. Vasson, J. Leymarie, A. Kavokin, A. Usui, Peder Bergman, Galia Pozina and Bo Monemar
  Resonant light delay in GaN with ballistic and diffusive propagation
  Physical Review Letters, 2008, 100(8), .
 Web of Science® Times Cited: 12

T. Hofmann, Vanya Darakchieva, Bo Monemar, H. Lu, W. J. Schaff and M. Schubert
  Optical hall effect in hexagonal InN
  Journal of Electronic Materials, 2008, 37(5), 611-615.
 Web of Science® Times Cited: 16

M. Sabooni, M. Esmaeili, H. Haratizadeh, Bo Monemar and H. Amano
  Dynamical study of the radiative recombination processes in GaN/AlGaN QWs
  Journal of materials science. Materials in electronics, 2008, 19( SUPPL. 1), .

Bo Monemar, Plamen Paskov, Peder Bergman, A.A. Toropov, T.V. Shubina, T. Malinauskas and A. Usui
  Recombination of free and bound excitons in GaN
  Physica status solidi. B, Basic research, 2008, 245(9), 1723-1740.
 Web of Science® Times Cited: 36

A.A. Toropov, Yu. E. Kitaev, Tatiana Shubina, Plamen Paskov, Peder Bergman and Bo Monemar
  Polarization-resolved phonon-assisted optical transitions of bound excitons in wurtzite GaN
  , 2008, , .
 Web of Science® Times Cited: 6

Vanya Darakchieva, Manfred Beckers, Mengyao Xie, Lars Hultman, Bo Monemar, J-. F. Carlin, E. Feltin, M. Gonschorek and N. Grandjean
  Effects of strain and composition on the lattice parameters and applicability of Vegard's rule in Al-rich Al1-x Inx N films grown on sapphire
  Journal of Applied Physics, 2008, 103(10), 103513.
 Web of Science® Times Cited: 28

Galia Pozina, Carl Hemmingsson, Plamen P. Paskov, Peder Bergman, Bo Monemar, T. Kawashima, H. Amano, I. Akasaki and A. Usui
  Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates
  Applied Physics Letters, 2008, 92(15), 151904.
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 Web of Science® Times Cited: 6

Vanya Darakchieva, Mengyao Xie, Ferenc Tasnadi, Igor Abrikosov, Lars Hultman, Bo Monemar, J Kamimura and K Kishino
  Lattice parameters, deviations from Vegards rule, and E-2 phonons in InAlN
  Applied Physics Letters, 2008, 93(26), 261908.
 Web of Science® Times Cited: 19

Galia Pozina, Carl Hemmingsson, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Bo Monemar, Lars Hultman and Erik Janzén
  Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substrate
  Journal of Applied Physics, 2008, 104(11), 113513.
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 Web of Science® Times Cited: 2

R. Kroger, T. Paskova, S. Figge, D. Hommel, A. Rosenauer and Bo Monemar
  Interfacial structure of a -plane GaN grown on r -plane sapphire
  Applied Physics Letters, 2007, 90(8), .
 Web of Science® Times Cited: 9

Vanya Darakchieva, T. Paskova, M. Schubert, Plamen Paskov, Hans Arwin, Bo Monemar, D. Hommel, M. Heuken, J. Off, B.A. Haskell, P.T. Fini, J.S. Speck and S. Nakamura
  Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers
  Journal of Crystal Growth, 2007, 300(1), 233-238.
 Web of Science® Times Cited: 4

Carl Hemmingsson, Plamen Paskov, Galia Pozina, M. Heuken, B. Schineller and Bo Monemar
  Hydride vapour phase epitaxy growth and characterization of thick GaN using a vertical HVPE reactor
  Journal of Crystal Growth, 2007, 300(1), 32-36.
 Web of Science® Times Cited: 13

F. Tuomisto, T. Paskova, S. Figge, D. Hommel and Bo Monemar
  Vacancy defect distribution in heteroepitaxial a-plane GaN grown by hydride vapor phase epitaxy
  Journal of Crystal Growth, 2007, 300(1), 251-253.
 Web of Science® Times Cited: 9

F. Tuomisto, T. Paskova, R. Kroger, S. Figge, D. Hommel, Bo Monemar and R. Kersting
  Defect distribution in a-plane GaN on Al2 O3
  Applied Physics Letters, 2007, 90(12), .
 Web of Science® Times Cited: 26

Bo Monemar, Plamen Paskov, Peder Bergman, A.A. Toropov and T.V. Shubina
  Recent developments in the III-nitride materials
  Physica status solidi. B, Basic research, 2007, 244(6), 1759-1768.
 Web of Science® Times Cited: 21

E. Valcheva, S. Dimitrov, Bo Monemar, H. Haratizadeh, Per Persson, H. Amano and I. Akasaki
  Influence of well-width fluctuations on the electronic structure of GaN/AlxGa1-xN multiquantum wells with graded interfaces
  Acta Physica Polonica. A, 2007, 112(2), 395-400.
 Web of Science® Times Cited: 2

Bo Monemar, Plamen Paskov, Peder Bergman, S. Keller, S. P. DenBaars and U. K. Mishra
  Effect of an (Al,In)N insertion layer on the radiative emission properties of (In,Ga)N/GaN multiple quantum well structures
  Physica status solidi. A, Applied research, 2007, 204(1), 304-308.
 Web of Science® Times Cited: 1

M. Esmaeili, M. Sabooni, H. Haratizadeh, Plamen Paskov, Bo Monemar, Per-Olof Holtz, S. Kamiyama and M. Iwaya
  Optical properties of GaN/AlGaN QW nanostructures with different well and barrier widths
  Journal of Physics: Condensed Matter, 2007, 19(35), .
 Web of Science® Times Cited: 5

Hamid Harati Zadeh, Bo Monemar, Plamen Paskov, Per-Olof Holtz, E Valcheva, M Iwaya, S Kamiyama, H Amano and I Akasaki
  Optical observation of discrete well width fluctuations in wide band gap III-nitride quantum wells
  Physica status solidi. B, Basic research, 2007, 244(5), 1727-1734.
 Web of Science® Times Cited: 4

Tatiana Shubina, M.M. Glazov, S.V. Ivanov, A. Vasson, J. Leymarie, Bo Monemar, T. Araki, H. Naoi and Y. Nanishi
  Effects of non-stoichiometry and compensation on fundamental parameters of heavily-doped InN
  Physica Status Solidi. C, Current topics in solid state physics, 2007, 4(7), 2474-2477.
 Web of Science® Times Cited: 6

Tatiana Shubina, A. Vasson, J. Leymarie, N.A. Gippius, V.N. Jmerik, Bo Monemar and S.V. Ivanov
  Localized plasmons at pores and clusters within inhomogeneous indium nitride films
  Physica Status Solidi. C, Current topics in solid state physics, 2007, 4(7), 2445-2448.
 Web of Science® Times Cited: 2

Evgenii Moskalenko, Mats Larsson, Fredrik Karlsson, Per-Olof Holtz, Bo Monemar, W.V. Schoenfeld and P.M. Petroff
  Enhancement of the luminescence intensity of InAs/GaAs quantum dots induced by an external electric field
  Nano letters (Print), 2007, 7(1), 188-193.
 Web of Science® Times Cited: 12

Tanja Paskova, L. Becker, T. Böttcher, D. Hommel, Plamen Paskov and Bo Monemar
  Effect of sapphire-substrate thickness on the curvature of thick GaN films grown by hydride vapor phase epitaxy
  Journal of Applied Physics, 2007, 102(12), .
 Web of Science® Times Cited: 3

Bo Monemar and Bo Sernelius
  Defect related issues in the "current roll-off" in InGaN based light emitting diodes
  Applied Physics Letters, 2007, 91, 181103-1-181103-3.
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 Web of Science® Times Cited: 135

Evgenii Moskalenko, Mats Larsson, Fredrik Karlsson, Per-Olof Holtz, Bo Monemar, W.V. Schoenfeld and P.M. Petroff
  The effect of the external lateral electric field on the luminescence intensity of InAs/GaAs quantum dots
  Physics of the solid state, 2007, 49(10), 1995-1998.
 Web of Science® Times Cited: 1

Tatiana Shubina, A.A. Toropov, O.G. Lublinskaya, P.S. Kopev, S.V. Ivanov, A. El-Shaer, M. Al-Suleiman, A. Bakin, A. Waag, A. Voinilovich, E.V. Lutsenko, G.P. Yablonskii, Peder Bergman, Galia Pozina and Bo Monemar
  Recombination dynamics and lasing in ZnO/ZnMgO single quantum well structures
  Applied Physics Letters, 2007, 91(20), .
 Web of Science® Times Cited: 17

Galia Pozina, Plamen Paskov, Peder Bergman, Carl Hemmingsson, Lars Hultman, Bo Monemar, H. Amano and A. Usui
  Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates
  Applied Physics Letters, 2007, 91(22), .
 Web of Science® Times Cited: 11

M. Sabooni, M. Esmaeili, Hamid Harati Zadeh, Bo Monemar, Plamen Paskov, Per-Olof Holtz, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Exciton localization behaviour in different well width undoped GaN/Al 0.07Ga0.93N nanostructures
  , 2007, , .
 Web of Science® Times Cited: 4

Galia Pozina, Carl Hemmingsson, Peder Bergman, David Trinh, Lars Hultman and Bo Monemar
  Dynamics of bound excitons versus thickness in freestanding GaN wafers grown by halide vapor phase epitaxy
  Applied Physics Letters, 2007, 90(22), .
 Web of Science® Times Cited: 8

B. Gil, P. Bigenwald, M. Leroux, Plamen Paskov and Bo Monemar
  Internal structure of the neutral donor-bound exciton complex in cubic zinc-blende and wurtzite semiconductors
  Physical Review B. Condensed Matter and Materials Physics, 2007, 75(8), .
 Web of Science® Times Cited: 9

M. Esmaeili, Hamid Harati Zadeh, Bo Monemar, Plamen Paskov, Per-Olof Holtz, Peder Bergman, M. Iwaya, S. Kamiyama, H. Amano and I Akasaki
  Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: Influence of Al composition and Si doping
  Nanotechnology, 2007, 18(2), .
 Web of Science® Times Cited: 7

Vanya Darakchieva, Bo Monemar and A. Usui
  On the lattice parameters of GaN
  Applied Physics Letters, 2007, 91(3), 031911.
 Web of Science® Times Cited: 29

Vanya Darakchieva, Tanja Paskova, M. Schubert, Hans Arwin, Plamen Paskov, Bo Monemar, D. Hommel, J. Off, F. Scholz, M. Heuken, B.A. Haskell, P.T. Fini, S.J. Speck and S. Nakamura
  Anisotropic strain and phonon deformation potentials in GaN
  Physical Review B. Condensed Matter and Materials Physics, 2007, 75(19), 195217.
 Web of Science® Times Cited: 46

Daniela Gogova, E. Talik, Ivan Gueorguiev Ivanov and Bo Monemar
  Large-area free-standing GaN substrate grown by hydride vapor phase epitaxy on epitaxial lateral overgrown GaN template
  Physica. B, Condensed matter, 2006, 371(1), 133-139.
 Web of Science® Times Cited: 8

A.A. Toropov, I.V. Sedova, S.V. Sorokin, Ya.V. Terent'ev, E.L. Ivchenko, D.N. Lykov, S.V. Ivanov, Peder Bergman and Bo Monemar
  III-V/II-VI heterovalent double quantum wells
  Physica status solidi. B, Basic research, 2006, 243(4), 819-826.
 Web of Science® Times Cited: 6

D. Gogova, D. Siche, R. Fornari, Bo Monemar, P. Gibart, L. Dobos, B. Pecz, F. Tuomisto, R. Bayazitov and G. Zollo
  Optical and structural studies of high-quality bulk-like GaN grown by HVPE on a MOVPE AlN buffer layer
  Semiconductor Science and Technology, 2006, 21(5), 702-708.
 Web of Science® Times Cited: 13

C. Roder, S. Einfeldt, S. Figge, D. Hommel, Tanja Paskova, Bo Monemar, B.A. Haskell, P.T. Fini, J.S. Speck and S. Nakamura
  Strain in a-plane GaN layers grown on r-plane sapphire substrates
  Physica Status Solidi (A) Applications and Materials, 2006, 203(7), 1672-1675.
 Web of Science® Times Cited: 3

M. Hermann, D. Gogova, D. Siche, M. Schmidbauer, Bo Monemar, M. Stutzmann and M. Eickhoff
  Nearly stress-free substrates for GaN homoepitaxy
  Journal of Crystal Growth, 2006, 293(2), 462-468.
 Web of Science® Times Cited: 15

V. Donchev, Evgenii Moskalenko, K.F. Karlsson, Per-Olof Holtz, Bo Monemar, W.V. Schoenfeld, J.M. Garcia and P.M. Petroff
  Enhancement of the photoluminescence intensity of a single InAs/GaAs quantum dot by separate generation of electrons and holes
  Physics of the solid state, 2006, 48(10), 1993-1999.

C. Roder, S. Einfeldt, S. Figge, T. Paskova, D. Hommel, Plamen Paskov, Bo Monemar, U. Behn, B.A. Haskell, P.T. Fini and S. Nakamura
  Stress and wafer bending of a -plane GaN layers on r -plane sapphire substrates
  Journal of Applied Physics, 2006, 100(10), .
 Web of Science® Times Cited: 38

H Haratizadeh, Bo Monemar and H Amano
  Effects of Si doping position on the emission energy and recombination dynamics of GaN/AlGaN multiple quantum wells
  Physica status solidi. A, Applied research, 2006, 203(1), 149-153.
 Web of Science® Times Cited: 1

Bo Monemar, Plamen Paskov, Peder Bergman, Tanja Paskova, Carl Hemmingsson, T Malinauskas, K Jarasiunas, P Gibart and B Beaumont
  Time-resolved spectroscopy of excitons bound at shallow neutral donors in HVPE GaN
  Physica. B, Condensed matter, 2006, 376, 482-485.
 Web of Science® Times Cited: 5

Plamen Paskov, R Schifano, Tanja Paskova, T Malinauskas, Peder Bergman, Bo Monemar, S Figge and D Hommel
  Structural defect-related emissions in nonpolar a-plane GaN
  Physica. B, Condensed matter, 2006, 376, 473-476.
 Web of Science® Times Cited: 26

Bo Monemar, Plamen Paskov, Peder Bergman, M Iwaya, S Kamiyama, H Amano and I Akasaki
  A hydrogen-related shallow donor in GaN?
  Physica. B, Condensed matter, 2006, 376, 460-463.
 Web of Science® Times Cited: 8

Bo Monemar, Plamen Paskov, Peder Bergman, Tanja Paskova, S Figge, J Dennemarck and D Hommel
  The dominant shallow 0.225 eV acceptor in GaN
  Physica status solidi. B, Basic research, 2006, 243(7), 1604-1608.
 Web of Science® Times Cited: 15

Vanya Darakchieva, Tanja Paskova, Plamen Paskov, Hans Arwin, M Schubert, Bo Monemar, S Figge, D Hommel, BA Haskell, PT Fini and S Nakamura
  Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a-plane GaN
  Physica status solidi. B, Basic research, 2006, 243(7), 1594-1598.
 Web of Science® Times Cited: 2

F Tuomisto, S Hautakangas, I Makkonen, V Ranki, MJ Puska, K Saarinen, M Bockowski, T Suski, Tanja Paskova, Bo Monemar, X Xu and DC Look
  Dissociation of V-Ga-O-N complexes in HVPE GaN by high pressure and high temperature annealing
  Physica status solidi. B, Basic research, 2006, 243(7), 1436-1440.
 Web of Science® Times Cited: 4

T Malinauskas, K Jarasiunas, R Aleksiejunas, Daniela Gogova, Bo Monemar, B Beaumont and P Gibart
  Contribution of dislocations to carrier recombination and transport in highly excited ELO and HYPE GaN layers
  Physica status solidi. B, Basic research, 2006, 243(7), 1426-1430.
 Web of Science® Times Cited: 20

Carl Hemmingsson, Plamen Paskov, Galia Pozina, M. Heuken, B. Schineller and Bo Monemar
  Growth of bulk GaN in a vertical hydride vapour phase epitaxy reactor
  Superlattices and Microstructures, 2006, 40( 4-6 SPEC. ISS.), 205-213.
 Web of Science® Times Cited: 14

Bo Monemar, Plamen Paskov, F. Tuomisto, K. Saarinen, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki and S. Kimura
  Dominant shallow acceptor related to oxygen and hydrogen in GaN
  Physical review. B, Condensed matter and materials physics, 2006, 376-377, 440-443.
 Web of Science® Times Cited: 12

T. Paskova, Vanya Darakchieva, Plamen Paskov, Bo Monemar, T. Suski, M. Bockowski, N. Ashkenov and M. Schubert
  Bending in HVPE GaN free-standing films: effects of laser lift-off, polishing and high temperature annealing
  Physica Status Solidi. C, Current topics in solid state physics, 2006, 3, 1475-1478.

Bo Monemar, Plamen Paskov, Peder Bergman, A.A. Toropov, T.V. Shubina, S. Figge, T. Paskova, D. Hommel, A. Usui, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
  Optical signatures of dopants in GaN
  Materials Science in Semiconductor Processing, 2006, 9( 1-3), 168-174.
 Web of Science® Times Cited: 5

Plamen Paskov, Tanja Paskova, Bo Monemar, S. Figge, D. Hommel, B.A. Haskell, P.T. Fini, S.J. Speck and S. Nakamura
  Optical properties of nonpolar a-plane GaN layers
  Superlattices and Microstructures, 2006, 40( 4-6 SPEC. ISS.), 253-261.
 Web of Science® Times Cited: 19

B. Arnaudov, T. Paskova, S. Evtimova, Bo Monemar, H. Lu and W.J. Schaff
  Electron concentration and mobility profiles in InN layers grown by MBE
  , 2006, , .
 Web of Science® Times Cited: 4

B. Arnaudov, Plamen Paskov, Hamid Harati Zadeh, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Radiative recombination mechanism in highly modulation doped GaN/AlGaN multiple quantum wells
  Physica Status Solidi. C, Current topics in solid state physics, 2006, 6, 1888-1891.
 Web of Science® Times Cited: 4

Plamen Paskov, R. Schifano, T. Malinauskas, T. Paskova, Peder Bergman, Bo Monemar, S. Figge, D. Hommel, B.A. Haskell, P.T. Fini, J.S. Speck and S. Nakamura
  Photoluminescence of a -plane GaN: comparison between MOCVD and HVPE grown layers
  Physica Status Solidi. C, Current topics in solid state physics, 2006, 6, 1499-1502.

A.A. Toropov, I.V. Sedova, O.G. Lyublinskaya, S.V. Sorokin, A.A. Sitnikova, S.V. Ivanov, Peder Bergman, Bo Monemar, F. Donatini and Le Si Dang
  Coexistence of type-I and type-II band lineups in Cd(Te,Se)/ZnSe quantum-dot structures
  Applied Physics Letters, 2006, 89(12), .
 Web of Science® Times Cited: 5

A.A. Toropov, Ya.V. Terent'ev, S.V. Sorokin, S.V. Ivanov, T. Koyama, K. Nishibayashi, A. Murayama, Y. Oka, Peder Bergman, Irina Buyanova, Weimin Chen and Bo Monemar
  Density-dependent dynamics of exciton magnetic polarons in ZnMnSe/ZnSSe type-II quantum wells
  Physical Review B. Condensed Matter and Materials Physics, 2006, 73(24), 245335.

Tatiana Shubina, D.S. Plotnikov, A. Vasson, J. Leymarie, Mats Larsson, Per-Olof Holtz, Bo Monemar, H. Lu, W.J. Schaff and P.S. Kop¿ev
  Surface-plasmon resonances in indium nitride with metal-enriched nano-particles
  Journal of Crystal Growth, 2006, 288(2), 230-235.
 Web of Science® Times Cited: 7

T. Tuomisto, K. Saarinen, T. Paskova, Bo Monemar, M. Bockowski and T. Suski
  Thermal stability of in-grown vacancy defects in GaN grown by hydride vapor phase epitaxy
  Journal of Applied Physics, 2006, 99(6), .
 Web of Science® Times Cited: 27

T. Paskova, R. Kroeger, S. Figge, D. Hommel, Vanya Darakchieva, Bo Monemar, E. Preble, A. Hanser, N.M. Williams and M. Tutor
  High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire
  Applied Physics Letters, 2006, 89(5), 051914.
 Web of Science® Times Cited: 51

T. Paskova, D. Hommel, Plamen Paskov, Vanya Darakchieva, Bo Monemar, M. Bockowski, T. Suski, I. Grzegory, T. Tuomisto, K. Saarinen, N. Ashkenov and M. Schubert
  Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy
  Applied Physics Letters, 2006, 88(14), 141909.
 Web of Science® Times Cited: 21

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, Anne Henry, Ivan Gueorguiev Ivanov, Peder Bergman, Bo Monemar, S. Chichibu and T. Onuma
  Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC
  Journal of Applied Physics, 2006, 99(9), .
 Web of Science® Times Cited: 32

Tanja Paskova, B. Arnaudov, Plamen Paskov, E.M. Goldys, S. Hautakangas, K. Saarinen, U. Sodervall and Bo Monemar
  Donor-acceptor pair emission enhancement in mass-transport-grown GaN
  Journal of Applied Physics, 2005, 98(3), 033508.
 Web of Science® Times Cited: 11

Plamen Paskov, R. Schifano, Bo Monemar, T. Paskova, S. Figge and D. Hommel
  Emission properties of a -plane GaN grown by metal-organic chemical-vapor deposition
  Journal of Applied Physics, 2005, 98(9), 093519.
 Web of Science® Times Cited: 127

Evgenii Moskalenko, Fredrik Karlsson, V.T. Donchev, Per-Olof Holtz, Bo Monemar, W.V. Schoenfeld and P.M. Petroff
  Effects of separate carrier generation on the emission properties of InAs/GaAs quantum dots
  Nano letters (Print), 2005, 5(11), 2117-2122.
 Web of Science® Times Cited: 16

AA Toropov, OV Nekrutkina, Tatiana Shubina, T Gruber, C Kirchner, A Waag, K.Fredrik Karlsson and Bo Monemar
  Temperature-dependent polarized luminescence of exciton polaritons in a ZnO film
  Physica status solidi. A, Applied research, 2005, 202(3), 392-395.

Tatiana Shubina, SV Ivanov, VN Jmerik, MM Glazov, AP Kalvarskii, MG Tkachman, A Vasson, J Leymarie, A Kavokin, H Amano, I Akasaki, KSA Butcher, Q Guo, Bo Monemar and PS Kop'ev
  Optical properties of InN with stoichoimetry violation and indium clustering
  Physica status solidi. A, Applied research, 2005, 202(3), 377-382.
 Web of Science® Times Cited: 24

JF Falth, MN Gurusinghe, XY Liu, TG Andersson, Ivan Gueorguiev Ivanov, Bo Monemar, HH Yao and SC Wang
  Influence of dislocation density on photoluminescence intensity of GaN
  Journal of Crystal Growth, 2005, 278(01-Apr), 406-410.
 Web of Science® Times Cited: 5

M. Misheva, Henrik Larsson, Daniela Gogova and Bo Monemar
  Positron annihilation study of HVPE grown thick GaN layers
  Physica status solidi. A, Applied research, 2005, 202(5), 713-717.
 Web of Science® Times Cited: 6

S Figge, T Bottcher, J Dennemarck, R Kroger, Tanja Paskova, Bo Monemar and D Hommel
  Optoelectronic devices on bulk GaN
  Journal of Crystal Growth, 2005, 281(1), 101-106.
 Web of Science® Times Cited: 6

Tanja Paskova, Vanya Darakchieva, Plamen Paskov, Jens Birch, E Valcheva, Per Persson, B Arnaudov, S Tungasmitta and Bo Monemar
  Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers
  Journal of Crystal Growth, 2005, 281(1), 55-61.
 Web of Science® Times Cited: 48

Bo Monemar, Henrik Larsson, Carl Hemmingsson, Ivan Gueorguiev Ivanov and Daniela Gogova
  Growth of thick GaN layers with hydride vapour phase epitaxy
  Journal of Crystal Growth, 2005, 281(1), 17-31.
 Web of Science® Times Cited: 40

A. Kasic, D. Gogova, Henrik Larsson, Ivan Gueorguiev Ivanov, Jens Birch, Bo Monemar, M. Fehrer and V. Härle
  Highly homogeneous bulk-like 2'' GaN grown by HVPE on MOCVD-GaN template
  Journal of Crystal Growth, 2005, 275, e387-e393.
 Web of Science® Times Cited: 5

Tatiana Shubina, J. Leymarie, V.N. Jmerik, H. Amano, W.J. Schaff, Bo Monemar and S.V. Ivanov
  Optical properties of InN related to surface plasmons
  Physica status solidi. A, Applied research, 2005, 202(14), 2633-2641.
 Web of Science® Times Cited: 6

Bo Monemar, Tanja Paskova, Carl Hemmingsson, Henrik Larsson, Plamen Paskov, Ivan Gueorguiev Ivanov and Aleksander Kasic
  Growth of thick GaN layers by hydride vapor phase epitaxy
  Journal of Ceramic Processing Research, 2005, 6(2), 153-162.

Plamen Paskov, Peder Bergman, Vanya Darakchieva, Tanja Paskova, Bo Monemar, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
  Photoluminescence of GaN/AlN superlattices grown by MOCVD
  Physica Status Solidi. C, Current topics in solid state physics, 2005, 2, 2345-2348.

Plamen Paskov, Peder Bergman, Bo Monemar, S. Keller, S.P. DenBaars and U.K. Mishra
  Spatially direct and indirect transitions in InGaN/GaN structures with coupled quantum wells
  Physica Status Solidi. C, Current topics in solid state physics, 2005, 2, 2337-2340.

K. Scott, A. Butcher, M. Wintrebert-Fouquet, P.P.-T. Chen, K.E. Prince, H. Timmers, S.K. Shrestha, Tatiana Shubina, S.V. Ivanov, R. Wuhrer, M.R. Philips and Bo Monemar
  Non-stoichiometry and non-homogeneity in InN
  Physica Status Solidi. C, Current topics in solid state physics, 2005, 2, 2263-2266.

B. Arnaudov, Tanja Paskova, Plamen Paskov, Björn Magnusson, Bo Monemar, H. Lu and W.J. Schaff
  On the nature of the near bandedge luminescence of InN epitaxial layers
  AIP Conference Proceedings, 2005, 772, 285-286.

Tanja Paskova, B. Arnaudov, Plamen Paskov, E.M. Goldys, S. Hautakangas, K. Saarinen, U. Sodervall and Bo Monemar
  Dominating behaviour of the donor-acceptor pair emission in mass-transport GaN
  AIP Conference Proceedings, 2005, 772, 261-262.

A.A. Toropov, O.V. Nekrutina, Tatiana Shubina, S.V. Ivanov, Th. Gruber, R. Kling, F. Reuss, C. Kirchner, A. Waag, Fredrik Karlsson, Peder Bergman and Bo Monemar
  Excitonic Properties of ZnO Films and Nanorods
  AIP Conference Proceedings, 2005, 772, 991-992.

E.S. Moskalenko, Fredrik Karlsson, V. Donchev, Per-Olof Holtz, Bo Monemar, W.V. Schoenfeld and P.M. Petroff
  Exploitation of an Additional Infrared Laser to Modulate the Luminescence Intensity from InAs Quantum Dots
  AIP Conference Proceedings, 2005, 772, 705-706.

Tatiana Shubina, S.V. Ivanov, V.N. Mjerik, D.D. Solnyshkov, P.D. Kopev, A. Vasson, J. Leymaire, A. Kavokin, H. Amano, S. Kamiyama, M. Iwaya, I. Akasaki, H. Lu, W.J. Schaff, A. Kasic and Bo Monemar
  Mie resonant Absorption and Infrared Emission in InN Related to Metallic In Clusters
  AIP Conference Proceedings, 2005, 772, 263-264.

Tanja Paskova, Vanya Darakchieva, Plamen Paskov, Jens Birch, E. Valcheva, Per Persson, B. Arnaudov, S. Tungasmita and Bo Monemar
  Nonpolar a-plane HVPE GaN: growth and in-plane anisotropic properties
  Physica Status Solidi. C, Current topics in solid state physics, 2005, 2, 2027-2031.

Bo Monemar, Plamen Paskov and A. Kasic
  Optical properties of InN - The bandgap question
  Superlattices and Microstructures, 2005, 38(1), 38-56.
 Web of Science® Times Cited: 64

Vanya Darakchieva, E. Valcheva, Plamen Paskov, M. Schubert, Tanja Paskova, Bo Monemar, H. Amano and I. Akasaki
  Phonon mode behavior in strained wurtzite AlN/GaN superlattices
  Physical Review B. Condensed Matter and Materials Physics, 2005, 71(11), 115329.
 Web of Science® Times Cited: 17

D. Gogova, Carl Hemmingsson, Bo Monemar, E. Talik, M. Kruczek, F. Tuomisto and K. Saarinen
  Investigation of the structural and optical properties of free-standing GaN grown by HVPE
  Journal of Physics D: Applied Physics, 2005, 38(14), 2332-2337.
 Web of Science® Times Cited: 15

Daniela Gogova, Henrik Larsson, A. Kasic, Gholam Reza Yazdi, Ivan Gueorguiev Ivanov, Rositsa Yakimova, Bo Monemar, E. Aujol, E. Frayssinet, J-P. Faurie, B. Beaumont and P. Gibart
  High-Quality 2'' Bulk-Like Free-Standing GaN Grown by HydrideVapour Phase Epitaxy on a Si-doped Metal Organic Vapour Phase Epitaxial GaN Template with an Ultra Low Dislocation Density
  Japanese Journal of Applied Physics, 2005, 44, 1181-1185.
 Web of Science® Times Cited: 13

A. Kasic, Daniela Gogova, Henrik Larsson, Carl Hemmingsson, Ivan Gueorguiev Ivanov, Rositsa Yakimova, Bo Monemar and M. Heuken
  Characterization of crack-free relaxed GaN grown on 2″ sapphire
  Journal of Applied Physics, 2005, 98(7), 73525.
 Web of Science® Times Cited: 4

Vanya Darakchieva, Tanja Paskova, Plamen Paskov, Bo Monemar, N. Ashkenov and M. Schubert
  Structural characteristics and lattice parameters of hydride vapor phase epitaxial GaN free-standing quasisubstrates
  Journal of Applied Physics, 2005, 97(1), 013517.
 Web of Science® Times Cited: 23

Tanja Paskova, Vanya Darakchieva, E Valcheva, Plamen Paskov, Ivan Gueorguiev Ivanov, Bo Monemar, T Bottcher, C Roder and D Hommel
  Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications: Strain distribution and wafer bending
  Journal of Electronic Materials, 2004, 33(5), 389-394.
 Web of Science® Times Cited: 15

Daniela Gogova, A. Kasic, Henrik Larsson, B. Pécz, Rositsa Yakimova, Ivan Gueorguiev Ivanov and Bo Monemar
  Characterization of high-quality free-standing GaN grown by HVPE
  Physica Scripta, 2004, T114, 18-21.
 Web of Science® Times Cited: 2

M Godlewski, H Przybylinska, R Bozek, EM Goldys, Peder Bergman, Bo Monemar, I Grzegory and S Porowski
  Compensation mechanisms in magnesium doped GaN
  Physica status solidi. A, Applied research, 2004, 201(2), 216-220.
 Web of Science® Times Cited: 1

B Arnaudov, Tanja Paskova, Plamen Paskov, Björn Magnusson, E Valcheva, Bo Monemar, H Lu, WJ Schaff, H Amano and I Akasaki
  Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
  Physical Review B. Condensed Matter and Materials Physics, 2004, 69(11), .
 Web of Science® Times Cited: 140

Daniela Gogova, A Kasic, Henrik Larsson, B Pecz, Rositsa Yakimova, Björn Magnusson, Bo Monemar, F Tuomisto, K Saarinen, C Miskys, M Stutzmann, C Bundesmann and M Schubert
  Optical and structural characteristics of virtually unstrained bulk-like GaN
  Japanese Journal of Applied Physics, 2004, 43(4A), 1264-1268.
 Web of Science® Times Cited: 20

O Gelhausen, MR Phillips, EM Goldys, Tanja Paskova, Bo Monemar, M Strassburg and A Hoffmann
  Dissociation of H-related defect complexes in Mg-doped GaN
  Physical Review B. Condensed Matter and Materials Physics, 2004, 69(12), .
 Web of Science® Times Cited: 31

SV Ivanov, Tatiana Shubina, VN Jmerik, VA Vekshin, PS Kop'ev and Bo Monemar
  Plasma-assisted MBE growth and characterization of InN on sapphire
  Journal of Crystal Growth, 2004, 269(1), .
 Web of Science® Times Cited: 38

Tanja Paskova, Plamen Paskov, E Valcheva, Vanya Darakchieva, Jens Birch, A Kasic, B Arnaudov, Sukkaneste Tungasmita and Bo Monemar
  Polar and nonpolar GaN grown by HVPE: Preferable substrates for nitride-based emitting devices
  Physica status solidi. A, Applied research, 2004, 201(10), 2265-2270.
 Web of Science® Times Cited: 12

Bo Monemar, Plamen Paskov, H Haradizadeh, Peder Bergman, E Valcheva, Vanya Darakchieva, B Arnaudov, Tanja Paskova, Per-Olof Holtz, Galia Pozina, S Kamiyama, M Iwaya, H Amano and I Akasaki
  Optical investigation of AlGaN/GaN quantum wells and superlattices
  Physica status solidi. A, Applied research, 2004, 201(10), 2251-2258.

A. Kasic, Daniela Gogova, Henrik Larsson, Carl Hemmingsson, Ivan Gueorguiev Ivanov, Bo Monemar, C. Bundesmann and M. Schubert
  Micro-Raman scattering profiling studies on HVPE-grown free-standing GaN
  Physica status solidi. A, Applied research, 2004, 201(12), 2773-2776.
 Web of Science® Times Cited: 6

Tatiana Shubina, SV Ivanov, VN Jmerik, PS Kop'ev, A Vasson, J Leymarie, A Kavokin, H Amano, B Gil, O Briot and Bo Monemar
  Comment on "Mie resonances, infrared emission, and the band gap of InN" - Reply
  Physical Review Letters, 2004, 93(26), 269702.
 Web of Science® Times Cited: 8

R Leon, J Nadeau, K Evans, Tanja Paskova and Bo Monemar
  Electron irradiation effects on nanocrystal quantum dots used in bio-sensing applications
  IEEE Transactions on Nuclear Science, 2004, 51(6), 3186-3192.
 Web of Science® Times Cited: 2

Plamen Paskov, Tanja Paskova, Per-Olof Holtz and Bo Monemar
  Polarized photoluminescence of exciton-polaritons in free-standing GaN
  Physica status solidi. A, Applied research, 2004, 201(4), 678-685.
 Web of Science® Times Cited: 9

H. Haratizadeh, Bo Monemar, Plamen Paskov, Per-Olof Holtz, Galia Pozina, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Time resolved photoluminescence study of Si modulation doped GaN/Al 0.07Ga0.93N multiple quantum wells
  Physica status solidi. B, Basic research, 2004, 241(5), 1124-1133.
 Web of Science® Times Cited: 9

Tanja Paskova, E. Valcheva, Plamen Paskov, Bo Monemar, A.M. Roskowski, R.F. Davis, B. Beaumont and P. Gibart
  HVPE-GaN: Comparison of emission properties and microstructure of films grown on different laterally overgrown templates
  Diamond and related materials, 2004, 13(4-8), 1125-1129.
 Web of Science® Times Cited: 6

B. Arnaudov, Tanja Paskova, Plamen Paskov, Björn Magnusson, E. Valcheva, Bo Monemar, H. Lu, W.J. Schaff, H. Amano and I. Akasaki
  Free-to-bound radiative recombination in highly conducting InN epitaxial layers
  Superlattices and Microstructures, 2004, 36(4-6), 563-571.
 Web of Science® Times Cited: 6

Vanya Darakchieva, Plamen Paskov, E. Valcheva, Tanja Paskova, M. Schubert, C. Bundesmann, H. Lu, W.J. Schaff and Bo Monemar
  Infrared ellipsometry and Raman studies of hexagonal InN films: Correlation between strain and vibrational properties
  Superlattices and Microstructures, 2004, 36(4-6), 573-580.
 Web of Science® Times Cited: 11

F. Bechstedt, J. Furthmuller, O. Ambacher, R. Goldhahn, T.V. Shubina, S.V. Ivanov, V.N. Jmerik, P.S. Kop'ev, A. Vasson, J. Leymarie, A. Kavokin, H. Amano, B. Gil, O. Briot and Bo Monemar
  Comment on "Mie resonances, infrared emission, and the band gap of InN"
  Physical Review Letters, 2004, 93(26 I), 269701-1.

A.A. Toropov, O.V. Nekrutkina, Tatiana Choubina, Th. Gruber, C. Kirchner, A. Waag, Fredrik Karlsson, Per-Olof Holtz and Bo Monemar
  Temperature-dependent exciton polariton photoluminescence in ZnO films
  Physical Review B. Condensed Matter and Materials Physics, 2004, 69(16), 165205.
 Web of Science® Times Cited: 21

V. Donchev, Fredrik Karlsson, Evgenii Moskalenko, Per-Olof Holtz, Bo Monemar, J.M. Schoenfeld, J.M. Garcia and M. Petroff
  Temperature Study of the Photoluminescence of a Single InAs/GaAs Quantum Dot
  Physica Status Solidi. C, Current topics in solid state physics, 2004, 3, 608.

E.S. Moskalenko, Fredrik Karlsson, V Donchev, Per-Olof Holtz, Bo Monemar, W.V. Schoenfeld and P.M. Petroff
  Effective optical manipulation of the charge state and emission intensity of the InAs/GaAs quantum dots by means of additional infrared illumination
  Applied Physics Letters, 2004, 85(5), 754-756.

Tatiana Shubina, S.V. Ivanov, V.N. Jmerik, D.D. Solnyshkov, V.A. Vekshin, P.S. Kopev, A Vasson, J Leymarie, A Kavokin, H Amano, K Shimono and Bo Monemar
  Mie Resonances, Infrared Emission, and the Band Gap of InN
  , 2004, , .
 Web of Science® Times Cited: 167

Vanya Darakchieva, Jens Birch, M Schubert, Tanja Paskova, S Tungasmita, G Wagner, A Kasic and Bo Monemar
  Strain-related structural and vibrational properties of thin epitaxial AIN layers
  Physical Review B. Condensed Matter and Materials Physics, 2004, 70(4), 045411.
 Web of Science® Times Cited: 31

Plamen Paskov, Tanja Paskova, Per-Olof Holtz and Bo Monemar
  Polarized photoluminescence study of free and bound excitons in free-standing GaN
  , 2004, , .
 Web of Science® Times Cited: 24

A Kasic, E Valcheva and Bo Monemar
  InN dielectric function from the midinfrared to the ultraviolet range
  , 2004, , .
 Web of Science® Times Cited: 39

Tanja Paskova, Plamen Paskov, E. M. Goldys, Vanya Darakchieva, U Södervall, M Godlewski, M Zielinski, E Valcheva, C Carlström, Qamar Ul Wahab and Bo Monemar
  Characterization of mass-transport grown GaN by hydride vapour-phase epitaxy
  Journal of Crystal Growth, 2004, 273( 1-2), 118-128.
 Web of Science® Times Cited: 5

Daniela Gogova, A. Kasic, Henrik Larsson, Carl Hemmingsson, Bo Monemar, F. Tuomisto, K. Saarinen, L. Dobos, B. Pécz, P. Gibart and B. Beaumont
  Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template
  Journal of Applied Physics, 2004, 96(1), 799-806.
 Web of Science® Times Cited: 38

Hamid Harati Zadeh, Bo Monemar, Plamen Paskov, Peder Bergman, Bo Sernelius, Per-Olof Holtz, M Iwaya, S Kamiyama, H Amano and I Akasaki
  Photoluminescence study of Si-doped GaN/Al0.07Ga0.93N multiple quantum wells with different dopant position
  Applied Physics Letters, 2004, 84(25), 5071-5073.
 Web of Science® Times Cited: 10

Vanya Darakchieva, Plamen Paskov, E Valcheva, Tanja Paskova, Bo Monemar, M Schubert, H Lu and W.J. Schaff
  Deformation potentials of the E1 (TO) and E2 modes of InN
  Applied Physics Letters, 2004, 84(18), 3636-3638.
 Web of Science® Times Cited: 29

Henrik Larsson, Daniela Gogova, A. Kasic, Rositsa Yakimova, Bo Monemar, C. R. Miskys and M. Stutzmann
  Free-standing HVPE-GaN Layers
  Physica Status Solidi. C, Current topics in solid state physics, 2003, 0(7), 1985-1988.

VY Ivanov, M Godlewski, A Khachapuridze, S Yatsunenko, T Wojtowicz, G Karczewski, JP Bergman, Bo Monemar, T Shamirzaev, Konstantin Zhuravlev, K Leonardi and D Hommel
  Microwave-induced delocalization of excitons in ternary compounds of II-VI and III-V semiconductors
  Acta Physica Polonica. A, 2003, 103(6), 559-566.

S Evtimova, B Arnaudov, Tanja Paskova, Bo Monemar and M Heuken
  Effect of carrier concentration on the microhardness of GaN layers
  Journal of materials science. Materials in electronics, 2003, 14(10-12), 771-772.
 Web of Science® Times Cited: 1

B Arnaudov, Tanja Paskova, S Evtimova, E Valcheva, M Heuken and Bo Monemar
  Multilayer model for Hall effect data analysis of semiconductor structures with step-changed conductivity
  Physical Review B. Condensed Matter and Materials Physics, 2003, 67(4), .
 Web of Science® Times Cited: 16

Tatiana Shubina, AA Toropov, VN Jmerik, MG Tkachman, Alexander Lebedev, VV Ratnikov, AA Sitnikova, VA Vekshin, SV Ivanov, PS Kop'ev, P Bigenwald, Peder Bergman, Per-Olof Holtz and Bo Monemar
  Intrinsic electric fields in N-polarity GaN/AlxGa1-xN quantum wells with inversion domains
  Physical Review B. Condensed Matter and Materials Physics, 2003, 67(19), .
 Web of Science® Times Cited: 7

Tatiana Shubina, VN Jmerik, SV Ivanov, PS Kop'ev, A Kavokin, K Fredrik Karlsson, Per-Olof Holtz and Bo Monemar
  Narrow-line excitonic photoluminescence in GaN/AlxGa1-xN quantum well structures with inversion domains
  Physical Review B. Condensed Matter and Materials Physics, 2003, 67(24), 241306.

N. Ashkenov, B.N. Mbenkum, C. Bundesmann, V. Riede, M. Lorenz, D. Spemann, E.M. Kaidashev, A. Kasic, M. Schubert, M. Grundmann, G. Wagner, H. Neumann, Vanya Darakchieva, Hans Arwin and Bo Monemar
  Infrared dielectric functions and phonon modes of high-quality ZnO films
  Journal of Applied Physics, 2003, 93(1), 126-133.
 Web of Science® Times Cited: 300

Tatiana Shubina, V.N. Jmerik, M.G. Tkachman, V.A. Vekshin, A.A. Toropov, S.V. Ivanov, P.S. Kop'ev, Peder Bergman, Fredrik Karlsson, Per-Olof Holtz and Bo Monemar
  Optical properties of GaN/AlGaN quantum wells with inversion domains
  Physica status solidi. A, Applied research, 2003, 195(3), 537-542.
 Web of Science® Times Cited: 1

Vanya Darakchieva, Tanja Paskova, Plamen Paskov, Bo Monemar, N. Ashkenov and M. Schubert
  Residual strain in HVPE GaN free-standing and re-grown homoepitaxial layers
  Physica status solidi. A, Applied research, 2003, 195(3), 516-522.
 Web of Science® Times Cited: 13

Vanya Darakchieva, Plamen Paskov, Tanja Paskova, E. Valcheva, Bo Monemar and M. Heuken
  Lattice parameters of GaN layers grown on a-plane sapphire: Effect of in-plane strain anisotropy
  Applied Physics Letters, 2003, 82(5), 703-705.
 Web of Science® Times Cited: 22

M.G. Tkachman, T.V. Shubina, V.N. Jmerik, S.V. Ivanov, P.S. Kop'ev, Tanja Paskova and Bo Monemar
  Phonon-assisted exciton luminescence in GaN layers grown by MBE and chloride-hydride VPE
  Semiconductors (Woodbury, N.Y.), 2003, 37(5), 532-536.
 Web of Science® Times Cited: 4

E. Valcheva, Tanja Paskova and Bo Monemar
  Nanopipes and their relationship to the growth mode in thick HVPE-GaN layers
  Journal of Crystal Growth, 2003, 255(1-2), 19-26.
 Web of Science® Times Cited: 8

Bo Monemar, Plamen Paskov, H. Haratizadeh, Per-Olof Holtz, Peder Bergman, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Photoluminescence of InGaN/GaN and AlGaN/GaN multiple quantum well structures: Role of depletion fields and polarization fields
  Physica status solidi. A, Applied research, 2003, 195(3), 523-527.
 Web of Science® Times Cited: 5

Tanja Paskova, Vanya Darakchieva, E. Valcheva, Plamen Paskov, Bo Monemar and M. Heuken
  In-plane epitaxial relationships between a-plane sapphire substrates and GaN layers grown by different techniques
  Journal of Crystal Growth, 2003, 257(1-2), 1-6.
 Web of Science® Times Cited: 4

B. Arnaudov, Tanja Paskova, O. Valassiades, Plamen Paskov, S. Evtimova, Bo Monemar and M. Heuken
  Magnetic-field-induced localization of electrons in InGaN/GaN multiple quantum wells
  Applied Physics Letters, 2003, 83(13), 2590-2592.
 Web of Science® Times Cited: 1

Daniela Gogova, Henrik Larsson, Rositsa Yakimova, Z. Zolnai, Ivan Gueorguiev Ivanov and Bo Monemar
  Fast growth of high quality GaN
  Physica status solidi. A, Applied research, 2003, 200(1), 13-17.
 Web of Science® Times Cited: 16

V. Darakchieva, Plamen Paskov, Mattias Schubert, Tanja Paskova, Hans Arwin, Bo Monemar, H. Amano and I. Akasaki
  Strain evolution and phonons in AlN/GaN superlattices
  , 2003, , .

Bo Monemar, Plamen Paskov, Hamid Harati Zadeh, Per-Olof Holtz, Peder Bergman, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Photoluminescence of n-doped InGaN/GaN and AlGaN/GaN Multiple Quantum Well structures, role of depletion fields and polarization fields
  Physica status solidi. A, Applied research, 2003, 195, 523.
 Web of Science® Times Cited: 5

Fredrik Karlsson, Per-Olof Holtz, Evgenii Moskalenko, Bo Monemar, W.V. Schoenfeld, J.M. Garcia and P.M. Petroff
  Effective tuning of the charge-state of single In(Ga)As/GaAs quantum dots by below barrier band gap excitation
  Surface Science, 2003, 532-535, 843-847.

Evgenii Moskalenko, V. Donchev, Fredrik Karlsson, Per-Olof Holtz, Bo Monemar, W.V. Schoenfeld, J.M. Garcia and M. Petroff
  Effect of an additional infrared excitation on the luminescence efficiency of a single InAs/GaAs quantum dot
  , 2003, 68(15), 1553171-15531714.
 Web of Science® Times Cited: 28

Bo Monemar, Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Peder Bergman, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum well structures
  Physica status solidi. B, Basic research, 2003, 237(1), 353-364.
 Web of Science® Times Cited: 21

Tatiana Shubina, Fredrik Karlsson, V.N. Jmerik, S.V. Ivanov, P.S. Kavokin, Per-Olof Holtz, P.S. Kopev and Bo Monemar
  Narrow-line excitonic luminescence in GaN/AlGaN nanostructures based on inversion domains
  Physica Status Solidi. C, Current topics in solid state physics, 2003, 0(7), 2716-2720.

Tanja Paskova, E Valcheva and Bo Monemar
  Thick GaN films grown on sapphire: Detects in highly mismatched systems
  DEFECTS AND DIFFUSION IN SEMICONDUCTORS, 2002, 200-2, .
 Web of Science® Times Cited: 5

Tatiana Shubina, SV Ivanov, AA Toropov, SV Sorokin, Alexander Lebedev, RN Kyutt, DD Solnyshkov, Galia Pozina, JP Bergman, Bo Monemar, Magnus Willander, A Waag and G Landwehr
  Interface effects in type-II CdSe/BeTe quantum dots
  Physica status solidi. B, Basic research, 2002, 229(1), 489-492.
 Web of Science® Times Cited: 6

Galia Pozina, JP Bergman, Bo Monemar, S Kamiyama, M Iwaya, H Amano and I Akasaki
  Optical study of AlGaN/GaN multiple quantum well structures grown on laterally overgrown GaN templates
  Physica status solidi. A, Applied research, 2002, 190(1), 107-111.

Bo Monemar, Plamen Paskov, Galia Pozina, JP Bergman, S Kamiyama, M Iwaya, H Amano and I Akasaki
  Influence of depletion fields on photoluminescence of n-doped InGaN/GaN multiple quantum well structures
  Physica status solidi. A, Applied research, 2002, 192(1), 21-26.
 Web of Science® Times Cited: 4

K Reginski, T Ochalski, J Muszalski, M Bugajski, JP Bergman, Per-Olof Holtz and Bo Monemar
  Investigations of optical properties of active regions in vertical cavity surface emitting lasers grown by MBE
  Thin Solid Films, 2002, 412(1-2), 107-113.
 Web of Science® Times Cited: 5

Bo Monemar, Plamen Paskov, JP Bergman, Galia Pozina, Vanya Darakchieva, M Iwaya, S Kamiyama, H Amano and I Akasaki
  Photoluminescence in n-doped In0.1Ga0.9N/In0.01Ga0.99N multiple quantum wells
  MRS Internet journal of nitride semiconductor research, 2002, 7(7), 1.
 Web of Science® Times Cited: 8

Tatiana Shubina, AA Toropov, SV Ivanov, JP Bergman, Tanja Paskova, Per-Olof Holtz and Bo Monemar
  Peculiarities of exciton-polaritons in GaN at different polarizations studied by mu-photoluminescence spectroscopy
  Physica status solidi. A, Applied research, 2002, 190(1), 205-211.

Bo Monemar, Plamen Paskov, JP Bergman, Galia Pozina, Tanja Paskova, S Kamiyama, M Iwaya, H Amano and I Akasaki
  Photoluminescence of excitons in InxGa1-xN/InyGa1-yN multiple quantum wells
  Physica status solidi. A, Applied research, 2002, 190(1), 161-166.
 Web of Science® Times Cited: 2

E Valcheva, Tanja Paskova, Per Persson and Bo Monemar
  Nanopipes in thick GaN films grown at high growth rate
  Physica status solidi. A, Applied research, 2002, 194(2), 532-535.
 Web of Science® Times Cited: 3

Tatiana Shubina, VN Jmerik, MG Tkachman, VA Vekshin, VV Ratnikov, AA Toropov, AA Sitnikova, SV Ivanov, Peder Bergman, Fredrik Karlsson, Per-Olof Holtz and Bo Monemar
  Nanometric-scale fluctuations of intrinsic electric fields in GaN/AlGaN quantum wells with inversion domains
  Physica status solidi. B, Basic research, 2002, 234(3), 919-923.
 Web of Science® Times Cited: 4

B Arnaudov, Tanja Paskova, S Evtimova, M Heuken and Bo Monemar
  Hall effect data analysis of GaN n(+)n structures
  Physica status solidi. B, Basic research, 2002, 234(3), 872-876.
 Web of Science® Times Cited: 2

Vanya Darakchieva, Jens Birch, Plamen Paskov, Sukkaneste Tungasmita, Tanja Paskova and Bo Monemar
  Strain evolution in high temperature AlN buffer layers for HVPE-GaN growth
  Physica status solidi. A, Applied research, 2002, 190(1), 59-64.
 Web of Science® Times Cited: 3

TV Shubina, Tanja Paskova, AA Toropov, SV Ivanov and Bo Monemar
  Polarized microphotoluminescence and reflectance spectroscopy of GaN with k perpendicular to c: Strongly pi-polarized line near the A exciton
  Physical Review B. Condensed Matter and Materials Physics, 2002, 65(7), .
 Web of Science® Times Cited: 11

Vanya Darakchieva, Plamen Paskov, Tanja Paskova, Jens Birch, Sukkaneste Tungasmita and Bo Monemar
  Deformation potentials of the E-1(TO) mode in AlN
  Applied Physics Letters, 2002, 80(13), 2302-2304.
 Web of Science® Times Cited: 18

R Leon, J Ibanez, S Marcinkevicius, J Siegert, Tanja Paskova, Bo Monemar, S Chaparro, C Navarro, SR Johnson and YH Zhang
  Defect states in red-emitting InxAl1-xAs quantum dots
  Physical Review B. Condensed Matter and Materials Physics, 2002, 66(8), .
 Web of Science® Times Cited: 1

M.Ya. Valakh, S.V. Ivanov, N. Mestres, J. Pascual, T.V. Shubina, S.V. Sorokin, V.V. Streltchuk, Galia Pozina and Bo Monemar
  Optical investigation of CdSe/ZnSe quantum nanostructures
  Semiconductor Science and Technology, 2002, 17(2), 173-177.
 Web of Science® Times Cited: 4

E. Valcheva, Tanja Paskova, Per Persson, Lars Hultman and Bo Monemar
  Misfit defect formation in thick GaN layers grown on sapphire by hydride vapor phase epitaxy
  Applied Physics Letters, 2002, 80(9), 1550.
 Web of Science® Times Cited: 9

E. Valcheva, Tanja Paskova and Bo Monemar
  Extended defects in GaN films grown at high growth rate
  Journal of Physics: Condensed Matter, 2002, 14(48), 13269-13275.
 Web of Science® Times Cited: 6

A. A. Toropov, A. V. Lebedev, S. V. Sorokin, D. D. Solnyshkov, S. V. Ivanov, P. S. Kopev, Irina Buyanova, Weimin Chen and Bo Monemar
  ZnMnSe/ZnSSe Type-II semimagnetic superlattices: Growth and magnetoluminescence properties
  Semiconductors (Woodbury, N.Y.), 2002, 36(11), 1288-1293.
 Web of Science® Times Cited: 5

Ya. V. Terentev, A. A. Toropov, S. V. Sorokin, A. V. Lebedev, S. V. Ivanov, P. S. Kopev, Irina Buyanova, Weimin Chen and Bo Monemar
  Semimagnetic ZnMnSe/CdSe Fractional Monolayer Superlattice as an Injector of Spin-Polarized Carriers
  Physica status solidi. B, Basic research, 2002, 229(2), 765-768.
 Web of Science® Times Cited: 1

Irina Buyanova, Ivan Gueorguiev Ivanov, Bo Monemar, Weimin Chen, A. A. Toropov, Ya. V. Terentev, S. V. Sorokin, A. V. Lebedev, S. V. Ivanov and P. S. Kopev
  Tunable laser spectroscopy of spin injection in ZnMnSe/ZnCdSe quantum structures
  Applied Physics Letters, 2002, 81(12), 2196.
 Web of Science® Times Cited: 29

Plamen Paskov, Vanya Darakchieva, Tanja Paskova, Per-Olof Holtz and Bo Monemar
  Anisotropy of the in-plane strain in GaN grown on A-plane sapphire
  Physica status solidi. B, Basic research, 2002, 234(3), 892-896.
 Web of Science® Times Cited: 3

Plamen Paskov, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Phonon-assisted photoluminescence in InGaN/GaN multiple quantum wells
  Physica status solidi. B, Basic research, 2002, 234(3), 755-758.
 Web of Science® Times Cited: 13

Fredrik Karlsson, Evgenii Moskalenko, Per-Olof Holtz, Bo Monemar, W.V. Schoenfeld, J.M. Garcia and P.M. Petroff
  Optical charging of self-assembled InAs/GaAs quantum dots
  Physica scripta. T, 2002, 101, 140-142.

Plamen Paskov, Tanja Paskova, Per-Olof Holtz and Bo Monemar
  Anisotropy of the free exciton emission in GaN grown on a-plane sapphire
  Physica status solidi. A, Applied research, 2002, 190(1), 75-79.
 Web of Science® Times Cited: 18

Fredrik Karlsson, Evgenii Moskalenko, Per-Olof Holtz, Bo Monemar, J.M. Garcia, W.V. Schoenfeld and P.M. Petroff
  The influence of carrier diffusion on the formation of charged excitons in InAs/GaAs quantum dots
  Physica. E, Low-Dimensional systems and nanostructures, 2002, 13(2-4), 101-104.
 Web of Science® Times Cited: 4

Evgenii Moskalenko, Fredrik Karlsson, Per-Olof Holtz, Bo Monemar, W.V. Schoenfeld, J.M. Garcia and P.M. Petroff
  Acceptor-induced threshold energy for the optical charging of InAs single quantum dots
  Physical Review B. Condensed Matter and Materials Physics, 2002, 66(19), 1953321-19533211.
 Web of Science® Times Cited: 24

Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Effect of n-type modulation doping on the photoluminescence of GaN/Al0.07Ga0.93N multiple quantum wells
  Applied Physics Letters, 2002, 80(8), 1373.
 Web of Science® Times Cited: 15

Evgenii Moskalenko, Fredrik Karlsson, Per-Olof Holtz, Bo Monemar, W.V. Schoenfeld, J.M. Garcia and P.M. Petroff
  Formation of the charged exciton complexes in self-assembled InAs single quantum dots
  Journal of Applied Physics, 2002, 92(11), 6787-6793.
 Web of Science® Times Cited: 16

Tanja Paskova, Plamen Paskov, Vanya Darakchieva, Sukkaneste Tungasmita, Jens Birch and Bo Monemar
  Defect reduction in HVPE growth of GaN and related optical spectra
  Physica status solidi. A, Applied research, 2001, 183(1), 197-203.
 Web of Science® Times Cited: 9

Galia Pozina, NV Edwards, JP Bergman, Bo Monemar, MD Bremser and RF Davis
  Time-resolved photoluminescence in strained GaN layers
  Physica status solidi. A, Applied research, 2001, 183(1), 151-155.
 Web of Science® Times Cited: 5

EM Goldys, M Godlewski, Tanja Paskova, Galia Pozina and Bo Monemar
  Characterization of red emission in nominally undoped hydride vapor phase epitaxy GaN
  MRS Internet journal of nitride semiconductor research, 2001, 6(1), art. no.-1.
 Web of Science® Times Cited: 9

VV Ratnikov, RN Kyutt, Tatiana Shubina, Tanja Paskova and Bo Monemar
  Determination of microdistortion components and their application to structural characterization of HVBE GaN epitaxial layers
  Journal of Physics D: Applied Physics, 2001, 34(10A), A30-A34.
 Web of Science® Times Cited: 19

B Arnaudov, Tanja Paskova, EM Goldys, S Evtimova and Bo Monemar
  Modeling of the free-electron recombination band in emission spectra of highly conducting n-GaN
  Physical Review B. Condensed Matter and Materials Physics, 2001, 64(4), .
 Web of Science® Times Cited: 34

Ivan Gueorguiev Ivanov, T Egilsson, Anne Henry, Bo Monemar and Erik Janzén
  Resonant sharp hot free-exciton luminescence in 6H-and 4H-SiC due to inhibited exciton-phonon interaction
  Physical Review B. Condensed Matter and Materials Physics, 2001, 64(8), .
 Web of Science® Times Cited: 6

Plamen Paskov, Per-Olof Holtz, Bo Monemar, JM Garcia, WV Schoenfeld and PM Petroff
  Excited-state magnetoluminescence of InAs/GaAs self-assembled quantum dots
  Japanese Journal of Applied Physics, 2001, 40(3B), 1998-2001.

Plamen Paskov, Tanja Paskova, Per-Olof Holtz and Bo Monemar
  Spin-exchange splitting of excitons in GaN
  Physical Review B. Condensed Matter and Materials Physics, 2001, 64(11), .
 Web of Science® Times Cited: 28

Bo Monemar, Plamen Paskov, Galia Pozina, Tanja Paskova, JP Bergman, M Iwaya, S Nitta, H Amano and I Akasaki
  Optical characterization of InGaN/GaN MQW structures without in phase separation
  Physica status solidi. B, Basic research, 2001, 228(1), 157-160.
 Web of Science® Times Cited: 5

Galia Pozina, JP Bergman, Bo Monemar, B Heying and JS Speck
  Radiative and nonradiative exciton lifetimes in GaN grown by molecular beam epitaxy
  Physica status solidi. B, Basic research, 2001, 228(2), 485-488.
 Web of Science® Times Cited: 2

Tatiana Shubina, Tanja Paskova, AA Toropov, Alexander Lebedev, SV Ivanov and Bo Monemar
  Micro-photoluminescence spectroscopy of exciton-polaritons in GaN with the wave vector k normal to the c-axis
  Physica status solidi. B, Basic research, 2001, 228(2), 481-484.
 Web of Science® Times Cited: 1

Galia Pozina, N.V. Edwards, Peder Bergman, Tanja Paskova, Bo Monemar, M.D. Bremser and R.F. Davis
  Time-resolved spectroscopy of strained GaN/AIN/6H-SiC heterostructures grown by metalorganic chemical vapor deposition
  Applied Physics Letters, 2001, 78(8), 1062-1064.
 Web of Science® Times Cited: 9

Irina A. Buyanova, Weimin Chen, Galia Pozina, P.N. Hai, Bo Monemar, H.P. Xin and C.W. Tu
  Optical properties of GaNAs/GaAs structures
  Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, 2001, 82(1-3), 143-147.
 Web of Science® Times Cited: 9

E. Valcheva, Tanja Paskova, M.V. Abrashev, Per Persson, Plamen Paskov, E.M. Goldys, R. Beccard, M. Heuken and Bo Monemar
  Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN
  Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, 2001, 82(1-3), 35-38.
 Web of Science® Times Cited: 5

Galia Pozina, Peder Bergman, Bo Monemar, S. Yamaguchi, H. Amano and I. Akasaki
  Time-resolved optical properties of GaN grown by metalorganic vapor phase epitaxy with indium surfactant
  Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, 2001, 82(1-3), 137-139.
 Web of Science® Times Cited: 3

Tanja Paskova, E.M. Goldys, Plamen Paskov, Qamar Ul Wahab, Lars Wilzén, Michel P de Jong and Bo Monemar
  Mass transport growth and optical emission properties of hydride vapor phase epitaxy GaN
  Applied Physics Letters, 2001, 78(26), 4130-4132.
 Web of Science® Times Cited: 6

Bo Monemar
  Bound excitons in GaN
  Journal of Physics: Condensed Matter, 2001, 13(32), 7011-7026.
 Web of Science® Times Cited: 49

Tanja Paskova, E. Valcheva, Jens Birch, Sukkaneste Tungasmita, Per Persson, Plamen Paskov, S. Evtimova, M. Abrashev and Bo Monemar
  Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer
  Journal of Crystal Growth, 2001, 230(3-4), 381-386.
 Web of Science® Times Cited: 19

Galia Pozina, Peder Bergman, Bo Monemar, M. Iwaya, S. Nitta, H. Amano and I. Akasaki
  Photoluminescence of InGaN/GaN multiple quantum wells grown by mass transport
  Journal of Crystal Growth, 2001, 230(3-4), 473-476.
 Web of Science® Times Cited: 1

E. Valcheva, Tanja Paskova, M.V. Abrashev, Plamen Paskov, Per Persson, E.M. Goldys, R. Beccard, M. Heuken and Bo Monemar
  Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates
  Journal of Applied Physics, 2001, 90(12), 6011-6016.
 Web of Science® Times Cited: 14

Irina Buyanova, Weimin Chen and Bo Monemar
  Electronic Properties of Ga(In)NAs Alloys
  MRS Internet journal of nitride semiconductor research, 2001, 6, .
 Web of Science® Times Cited: 129

Bo Monemar, Weimin Chen, Plamen Paskov, Tanja Paskova, Galia Pozina and Peder Bergman
  The 3.466 eV Bound Exciton in GaN
  Physica status solidi. B, Basic research, 2001, 228(2), 489-492.
 Web of Science® Times Cited: 7

A. A. Toropov, S. V. Sorokin, K. A. Kuritsyn, S. V. Ivanov, Galia Pozina, Peder Bergman, Matthias Wagner, Weimin Chen, Bo Monemar, A. Waag, D. R. Yakovlev, C. Sas, W. Ossau and G. Landwehr
  Magneto-photoluminescence studies of Cd(Mn)Se/Zn(Mn)Se diluted magnetic nanostructures
  Physica. E, Low-Dimensional systems and nanostructures, 2001, 10(1-3), 362-367.
 Web of Science® Times Cited: 2

P. N. Hai, Weimin Chen, Irina Buyanova, Bo Monemar, H. P. Xin and C. W. Tu
  Properties of GaAsN/GaAs quantum wells studied by optical detection of cyclotron resonance
  Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, 2001, 82(1-3), 218-220.
 Web of Science® Times Cited: 5

Plamen Paskov, Per-Olof Holtz, Bo Monemar, J.M. Garcia, W.V. Schoenfeld and P.M. Petroff
  Optical up-conversion processes in InAs quantum dots
  Japanese Journal of Applied Physics, 2001, 40(3 B), 2080-2083.
 Web of Science® Times Cited: 6

Fredrik Karlsson, Evgenii Moskalenko, Per-Olof Holtz, Bo Monemar, W.V. Schoenfeld, J.M. Garcia and P.M. Petroff
  Temperature influence on optical charging of self-assembled InAs/GaAs semiconductor quantum dots
  Applied Physics Letters, 2001, 78(19), 2952-2954.
 Web of Science® Times Cited: 30

Plamen Paskov, Tanja Paskova, Per-Olof Holtz and Bo Monemar
  Internal structure of free excitons in GaN
  Physica status solidi. B, Basic research, 2001, 228(2), 467-470.
 Web of Science® Times Cited: 3

Evgenii Moskalenko, Fredrik Karlsson, Per-Olof Holtz, Bo Monemar, W.V. Schoenfeld, J.M. Garcia and P.M. Petroff
  Influence of excitation energy on charged exciton formation in self-assembled InAs single quantum dots
  Physical review. B, Condensed matter and materials physics, 2001, 64, 085302.
 Web of Science® Times Cited: 31

S Wongmanerod, Bo Sernelius, Per-Olof Holtz, Bo Monemar, O Mauritz, K Reginski and M Bugajski
  Many-body effects in highly p-type modulation-doped GaAs/AlxGa1-xAs quantum wells
  Physical Review B. Condensed Matter and Materials Physics, 2000, 61(4), 2794-2798.
 Web of Science® Times Cited: 9

E Valcheva, Tanja Paskova, Sukkaneste Tungasmita, Per Persson, Jens Birch, EB Svedberg, Lars Hultman and Bo Monemar
  Interface structure of hydride vapor phase epitaxial GaN grown with high-temperature reactively sputtered AlN buffer
  Applied Physics Letters, 2000, 76(14), 1860-1862.
 Web of Science® Times Cited: 22

Galia Pozina, JP Bergman, Bo Monemar, S Yamaguchi, H Amano and I Akasaki
  Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant
  Applied Physics Letters, 2000, 76(23), 3388-3390.
 Web of Science® Times Cited: 22

Galia Pozina, JP Bergman, Bo Monemar, T Takeuchi, H Amano and I Akasaki
  Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells
  Journal of Applied Physics, 2000, 88(5), 2677-2681.
 Web of Science® Times Cited: 40

Galia Pozina, JP Bergman, Bo Monemar, M Iwaya, S Nitta, H Amano and I Akasaki
  InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport
  Applied Physics Letters, 2000, 77(11), 1638-1640.
 Web of Science® Times Cited: 15

Tanja Paskova, E Valcheva, Jens Birch, Sukkaneste Tungasmita, Per Persson, R Beccard, M Heuken and Bo Monemar
  Effect of Si doping of metalorganic chemical vapor deposition-GaN templates on the defect arrangement in hydride vapor phase epitaxy-GaN overgrown layers
  Journal of Applied Physics, 2000, 88(10), 5729-5732.
 Web of Science® Times Cited: 9

V Ratnikov, R Kyutt, Tatiana Shubina, Tanja Paskova, E Valcheva and Bo Monemar
  Bragg and Laue x-ray diffraction study of dislocations in thick hydride vapor phase epitaxy GaN films
  Journal of Applied Physics, 2000, 88(11), 6252-6259.
 Web of Science® Times Cited: 34

Tanja Paskova, E.M. Goldys, Rositsa Yakimova, E.B. Svedberg, Anne Henry and Bo Monemar
  Influence of growth rate on the structure of thick GaN layers grown by HVPE
  Journal of Crystal Growth, 2000, 208(1), 18-26.
 Web of Science® Times Cited: 34

Plamen Paskov, Per-Olof Holtz, S. Wongmanerod, Bo Monemar, J.M. Garcia, W.V. Schoenfeld and P.M. Petroff
  Auger processes in InAs self-assembled quantum dots
  Physica. E, Low-Dimensional systems and nanostructures, 2000, 6(1), 440-443.
 Web of Science® Times Cited: 7

Irina A. Buyanova, Bo Monemar, J.L. Lindstrom, T. Hallberg, L.I. Murin and V.P. Markevich
  Photoluminescence characterization of defects created in electron-irradiated silicon at elevated temperatures
  Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, 2000, 72(2), 146-149.
 Web of Science® Times Cited: 4

N.V. Edwards, M.D. Bremser, A.D. Batchelor, Irina A. Buyanova, L.D. Madsen, S.D. Yoo, T. Wethkamp, K. Wilmers, C. Cobet, N. Esser, R.F. Davis, D.E. Aspnes and Bo Monemar
  Optical characterization of wide bandgap semiconductors
  Thin Solid Films, 2000, 364(1), 98-106.
 Web of Science® Times Cited: 7

M. Godlewski, R. Narkowicz, T. Wojtowicz, Peder Bergman and Bo Monemar
  Quasi-zero-dimensional excitons in quantum well structures of CdTe/CdMnTe
  Journal of Crystal Growth, 2000, 214, 420-423.
 Web of Science® Times Cited: 6

A.A. Toropov, T.V. Shubina, A.V. Lebedev, S.V. Sorokin, S.V. Ivanov, Galia Pozina, Peder Bergman and Bo Monemar
  Dynamics of excitons near the mobility edge in CdSe/ZnSe superlattices
  Journal of Crystal Growth, 2000, 214, 806-809.
 Web of Science® Times Cited: 2

S.V. Ivanov, A.A. Toropov, T.V. Shubina, A.V. Lebedev, S.V. Sorokin, A.A. Sitnikova, P.S. Kop'Ev, G. Reuscher, M. Keim, F. Bensing, A. Waag, G. Landwehr, Galia Pozina, Peder Bergman and Bo Monemar
  MBE growth and properties of bulk BeCdSe alloys and digital (BeSe: CdSe)/ZnSe quantum wells
  Journal of Crystal Growth, 2000, 214, 109-114.
 Web of Science® Times Cited: 17

Plamen Paskov, Per-Olof Holtz, Bo Monemar, J.M. Garcia, W.V. Schoenfeld and P.M. Petroff
  Magnetoluminescence of highly excited InAs/GaAs self-assembled quantum dots
  Physical Review B. Condensed Matter and Materials Physics, 2000, 62(11), 7344-7349.
 Web of Science® Times Cited: 26

A.A. Toropov, T.V. Shubina, S.V. Sorokin, R.N. Kyutt, S.V. Ivanov, Galia Pozina, Peder Bergman, Bo Monemar, M. Karlsteen and M. Willander
  Excitons as a probe of interface morphology in Cd(Zn)Se/ZnSe heterostructures
  Applied Surface Science, 2000, 166(1), 278-283.
 Web of Science® Times Cited: 4

Bo Monemar and Galia Pozina
  Group III-nitride based hetero and quantum structures
  Progress in Quantum Electronics, 2000, 24(6), 239-290.
 Web of Science® Times Cited: 73

Irina Buyanova, Weimin Chen, Bo Monemar, H. P. Xin and C. W. Tu
  Photoluminescence characterization of GaNAs/GaAs structures grown by molecular beam epitaxy
  Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, 2000, 75(2-3), 166-169.
 Web of Science® Times Cited: 11

Matthias Wagner, Irina Buyanova, N. Q. Thinh, Weimin Chen, Bo Monemar, J. L. Lindström, H. Amano and I. Akasaki
  Magneto-optical studies of the 0.88-eV photoluminescence emission in electron-irradiated GaN
  Physical Review B. Condensed Matter and Materials Physics, 2000, 62(24), 16572-16577.
 Web of Science® Times Cited: 7

P. N. Hai, Weimin Chen, Irina Buyanova, Bo Monemar, H. Amano and I. Akasaki
  Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
  Physical Review B. Condensed Matter and Materials Physics, 2000, 62(16), R10607-R10609.

Son Tien Nguyen, P. N. Hai, Weimin Chen, Christer Hallin, Bo Monemar and Erik Janzén
  Hole effective masses in 4H SiC
  Physical Review B. Condensed Matter and Materials Physics, 2000, 61(16), .
 Web of Science® Times Cited: 15

Bo Monemar and Peder Bergman
  Comment on "Fermi-edge singularity observed in a modulation-doped AlGaN/GaN heterostructure"
  Applied Physics Letters, 2000, 76, 655.

S. Wongmanerod, Plamen Paskov, Per-Olof Holtz, Bo Monemar, O. Mauritz, K. Reginski and M. Bugajski
  Magneto-optical studies of highly p-type modulation-doped GaAs/AlxGa1-xAs quantum wells
  Physical review. B, Condensed matter and materials physics, 2000, 62, 15952.
 Web of Science® Times Cited: 2

Plamen Paskov, Per-Olof Holtz, Bo Monemar, W. Schoenfeld, J.M. Garcia and P.M. Petroff
  Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots
  Applied Physics Letters, 2000, 77(6), 812-814.
 Web of Science® Times Cited: 60

Galia Pozina, JP Bergman, Tanja Paskova and Bo Monemar
  Bound exciton dynamics in GaN grown by hydride vapor-phase epitaxy
  Applied Physics Letters, 1999, 75(26), 4124-4126.

Irina A Buyanova, T Hallberg, LI Murin, VP Markevich, Bo Monemar and JL Lindstrom
  Effect of high-temperature electron irradiation on the formation of radiative defects in silicon
  Physica. B, Condensed matter, 1999, 274, 528-531.

Bo Monemar, Peder Bergman, J Dalfors, Galia Pozina, Bo Sernelius, Per-Olof Holtz, H Amano and I Akasaki
  Radiative recombination in In0.15Ga0.85N/GaN multiple quantum well structures
  MRS Internet journal of nitride semiconductor research, 1999, 4(16), .

Son Tien Nguyen, Weimin Chen, J. L. Lindström, Bo Monemar and Erik Janzén
  A complex defect related to the carbon vacancy in 4H and 6H SiC
  Physica Scripta, 1999, T79, 46-49.

Matthias Wagner, Irina Buyanova, Weimin Chen, Bo Monemar, J. L. Lindström, H. Amano and I. Akasaki
  Magnetooptical investigations on electron irradiated GaN
  Physica Scripta, 1999, T79, 53-55.

Son Tien Nguyen, P. N. Hai, Matthias Wagner, Weimin Chen, A. Ellison, Christer Hallin, Bo Monemar and Erik Janzén
  Optically detected magnetic resonance studies of intrinsic defects in 6H-SiC
  Semiconductor Science and Technology, 1999, 14(12), 1141-1146.

Son Tien Nguyen, A. Ellison, Björn Magnusson, M. F. MacMillan, Weimin Chen, Bo Monemar and Erik Janzén
  Photoluminescence and Zeeman effect in chromium-doped 4H and 6H SiC
  Journal of Applied Physics, 1999, 86(8), 4348.

Irina Buyanova, Weimin Chen, Bo Monemar, H. P. Xin and C. W. Tu
  Effect of growth temperature on photoluminescence of GaNAs/GaAs quantum well structures
  Applied Physics Letters, 1999, 75(24), 3781.

Irina Buyanova, Weimin Chen, Galia Pozina, Peder Bergman, Bo Monemar, H. P. Xin and C. W. Tu
  Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy
  Applied Physics Letters, 1999, 75(4), 501.

Son Tien Nguyen, P. N. Hai, P. T. Huy, T. Gregorkiewicz, C. A. J. Ammerlaan, J. L. Lindström, Weimin Chen, Bo Monemar and Erik Janzén
  Electron-paramagnetic-resonance studies of defects in electron-irradiated p-type 4H and 6H SiC
  Physica. B, Condensed matter, 1999, 273-274, 655-658.

Irina Buyanova, Weimin Chen, Galia Pozina, Bo Monemar, H. P. Xin and C. W. Tu
  Mechanism for Light Emission in GaNAs/GaAs Structures Grown by Molecular Beam Epitaxy
  Physica status solidi. B, Basic research, 1999, 216(1), 125-129.

Irina Buyanova, Matthias Wagner, Weimin Chen, Bo Monemar, J. L. Lindström, H. Amano and I. Aksaki
  Effect of electron irradiation on optical properties of gallium nitride
  Physica Scripta, 1999, T79, 72-75.

Irina Buyanova, Matthias Wagner, Weimin Chen, N. V. Edwards, Bo Monemar, J. L. Lindström, M. D. Bremser, R. F. Davis, H. Amano and I. Akasaki
  Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride
  Physical review. B, Condensed matter and materials physics, 1999, 60(3), 1746-1751.

M. Linnarsson, Erik Janzén, Bo Monemar, M. Kleverman and A. Thilderkvist
  Electronic structure of the GaAs:MnGa center
  Physical Review B Condensed Matter, 1997, 55(11), 6938-6944.

Books

Bo Monemar, M. Kittler and H. Grimmeiss
  Advances in Light emitting Materials
  Trans Tech Publications, 2008.


Chapters in Books

Bo Monemar and Plamen Paskov
  Luminescence Studies of Impurities and Defects in III-Nitride Semiconductors
  Handbook of Luminescent Semiconductor Materials, CRC Press, 2010, 169-190.


Plamen Paskov and Bo Monemar
  Luminescence of GaN layers grown in nonpolar directions
  Nitrides with nonpolar surfaces: growth, properties, and devices, Wiley, 2008, 185-217.


Bo Monemar
  Perspective on the development of III-nitrides for optical emitters
  Advances in Light emitting Materials, Trans Tech Publications, 2008, 17-26.


Conference Articles

D Lindgren, M Heurlin, K Kawaguchi, M T Borgström, M-E Pistol, Bo Monemar, L Samuelson and A Gustafsson
  A luminescence study of doping effects in InP-based radial nanowire structures
  MSM XVIII, 2013.


Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, David Lindgren, Lars Samuelson, Xianfeng Ni, Hadis Morkoç, Tanya Paskova, Zhaoxia Bi and Jonas Ohlsson
  Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates
  Gallium Nitride Materials and Devices VI, 2011.


 Web of Science® Times Cited: 1  Fulltext PDF

Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, H. Amano, I. Akasaki, S. Figge, D. Hommel, Tanja Paskova and A. Usiui
  Mg related acceptors in GaN
  Phys. Status Solidi C 7, 2010.


 Web of Science® Times Cited: 4  Fulltext PDF

Nguyen Tien Son, Carl Hemmingsson, N. Morishita, T. Ohshima, Tanja Paskova, K.R. Evans, A Usui, J. Isoya, Bo Monemar and Erik Janzén
  Radiation-induced defects in GaN
  Physica Scripta, Vol. T141, 2010.


 Web of Science® Times Cited: 2

A Scholle, S Greulich-Weber, D J As, Ch Mietze, Tien Son Nguyen, Carl Hemmingsson, Bo Monemar, Erik Janzén, U Gerstmann, S Sanna, E Rauls and W G Schmidt
  Magnetic characterization of conductance electrons in GaN
  Physica Status Solidi, Vol. 247, 2010.


 Web of Science® Times Cited: 2

K. Jarasiunas, T. Malinauskas, R. Aleksiejunas, Bo Monemar, V. Ralchenko, A. Gontar and E. Ivakin
  Optical characterization of defect-related carrier recombination and transport features in GaN substrates and CVD diamonds
  Materials Science Forum, Vols. 600-603, 2009.


 Web of Science® Times Cited: 4

Vanya Darakchieva, T. Hofmann, M. Schubert, Bo Sernelius, Finn Giuliani, Mengyao Xie, Per O. A. Persson, Bo Monemar, W. J. Schaff, C.-L. Hsiao, L.-C. Chen and Y Nanishi
  Unravelling the free electron behavior in InN
  Optoelectronic and Microelectronic Materials and Devices, 2008, 2008.


Mengyao Xie, Mengyao Xie, Vanya Darakchieva, Vanya Darakchieva, Bo Monemar, Bo Monemar, J. Kamimura, J. Kamimura, K. Kishino and K. Kishino
  Lattice parameters and optical phonons
  IWN 2008,2008, 2008.


E. Valcheva, K. Kirilov, Bo Monemar, H. Amano and I. Akasaki
  Tunneling effects in short period strained GaN/AlN superlattices
  IWN 2008,2008, 2008.


Plamen Paskov, Bo Monemar, Tanja Paskova, E.A. Preble, A.D. Hanser and K.R. Evans
  Optical characterization of bulk GaN substrates with c-, a-, and m-plane surfaces
  IWN 2008, 2008.


 Web of Science® Times Cited: 2

Bo Monemar, Galia Pozina, Plamen Paskov, Carl Hemmingsson, Peder Bergman, T. Kawashima, H. Amano, I. Akasaki and A. Usui
  Acceptors in Mg doped GaN, optical properties and metastability
  IWN 2008,2008, 2008.


F. Tuomisto, J.M. Mäki, P. Pusa, J. Räisänen, Tanja Paskova, E. Valcheva and Bo Monemar
  Evolution of vacancy defects in GaN after H implantation and subsequent annealing
  IWN 2008,2008, 2008.


Tatiana Choubina, M.M. Glazov, A.A. Toropov, Ivan Gueorguiev Ivanov, N.A. Gippius, A. Vasson, J. Leymaire, A. Kavokin, A. Usui, Peder Bergman, Galia Pozina and Bo Monemar
  Realization of slow light in GaN crystals
  IWN 2008,2008, 2008.


Y. Honda, T. Hikosaka, M. Yamaguchi, N. Sawaki, Galia Pozina, Fredrik Karlsson, Vanya Darakchieva, Plamen Paskov and Bo Monemar
  DAP emission band in a carbon doped (1-101)GaN grown ob (001) Si substrate
  Phys. Stat. Sol. (c) Vol. 6, 2008.


 Web of Science® Times Cited: 3

T. Hofmann, Vanya Darakchieva, Bo Monemar, H. Lu, W.J. Schaff, L.-C. Chen, Y. Nanishi and M. Schubert
  Assessment of the surface electron properties of polar and non-polar InN surfaces
  MRS Fall Meeting,2008, 2008.


Vanya Darakchieva, T. Hofmann, M. Schubert, Bo Monemar, H. Lu, W.J. Schaff, C.-L. Hsiao, T.-W. Liu, L.-C. Chen, D. Muto and Y. Nanishi
  New insight into the free carrier properties of InN
  International workshop on Nitride semiconductors IWN2008,2008, 2008.


Tatiana Choubina, M.M. Glazov, A.A. Toropov, N.A. Gippius, Peder Bergman, Bo Monemar, A. Usui, A. Vasson, J. Leymarie, Ivan Gueorguiev Ivanov and P.S. Kopev
  Slow light in GaN
  16th Int. Symp. ¿Nanostructures: Physics and Technology,2008, 2008.


Tatiana Choubina, M.M. Glazov, A.A. Toropov, N.A. Gippius, A. Vasson, J. Leymarie, A. Kavokin, A. Usui, Peder Bergman, Galia Pozina and Bo Monemar
  The slow light in GaN
  ICPS2008,2008, 2008.


Bo Monemar, Plamen Paskov, Galia Pozina, Peder Bergman, Carl Hemmingsson, A.A. Toropov, Tatiana Choubina, T. Kawashima, H. Amano, I. Akasaki, A. Usui and Tanja Paskova
  Properties of dopants and defects in GaN from bound exciton spectra
  Meijo International Symposium on Nitride Semiconductors 2008,2008, 2008.


Bo Monemar, Plamen Paskov, Galia Pozina, Peder Bergman, Carl Hemmingsson, T. Kawashima, H. Amano, I. Akasaki and A. Usui
  Optical properties and acceptor states in Mg doped GaN
  8^th Akasaki Symposium,2008, 2008.


Galia Pozina, Carl Hemmingsson, Peder Bergman, T. Kawashima, H. Amano, I. Akasaki, A. Usui and Bo Monemar
  Optical properties of metastable shallow acceptors in Mg-doped GaN layers grown by metal-organic vapor phase epitaxy
  in PHYSICS OF SEMICONDUCTORS, vol 1199, 2008.


Plamen Paskov, Bo Monemar, Tanja Paskova, S. Kamiyama, H. Amano and I. Akasaki
  Photoluminescence study of near-surface GaN/AlN superlattices
  International Symposium on Integrated Optoelectronic Devices Photonics West 2008,2008, 2008.


Tanja Paskova, A.D. Hanser, E. Preble, K. Evans, R. Kroeger, F. Toumisto, R. Kersting, R. Alcorn, S. Ashley, C. Pagel, E. Valcheva, Plamen Paskov and Bo Monemar
  Defect and emission distributions in bulk GaN grown in polar and nonpolar directions: a comparative analysis
  International Symposium on Integrated Optoelectronic Devices Photonics West 2008,2008, 2008.


Galia Pozina, Carl Hemmingsson, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Ivan Gueorguiev Ivanov, Bo Monemar, Lars Hultman and Erik Janzén
  Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4- SiC substrate
  8th International Conference on Physics of Light-Matter Coupling in Nanostructures,2008, 2008.


Galia Pozina, Bo Monemar, H. Amano, I. Akasaki and A. Usui
  Metastable UV luminescence in Mg-doped GaN layers grown on freestanding GaN substrates
  International Symposium on Semiconductor Light Emitting Devices,2008, 2008.


Plamen Paskov, Bo Monemar, D. Iida, T. Kawashima, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
  Nonpolar GaN layers grown by sidewall epitaxial lateral overgrowth: optical evidences for a reduced stacking fault density
  Proc. of the 7th International Conference on Nitride Semiconductors,2007, 2008.


Vanya Darakchieva, Manfred Beckers, Lars Hultman, Mengyao Xie, Bo Monemar, J.-F Carlin and N. Grandjean
  Strain and compositional analyzes of Al-rich Al1-xInxN alloys grown by MOVPE: impact on the applicability of Vegard's rule
  Physica Status Solidi (C) Current Topics in Solid State Physics, 2008.


 Web of Science® Times Cited: 1

Tatiana Choubina, M.M. Glasov, A.A. Toropov, E.L. Ivchenko, A. Usui, Peder Bergman and Bo Monemar
  Light diffusion in GaN epilayers
  3rd International Conference on Spontaneous Coherence in Excitonic System,2007, 2007.


Tatiana Shubina, S.V. Ivanov, V.N. Jmerik, A.M. Mizerov, J. Leymarie, A. Vasson, Bo Monemar and P.S. Kopev
  Inhomogeneous InGaN and InN with In-enriched Nanostructures
  -,2007, 2007.


Rositsa Yakimova and Bo Monemar
  Preface
  First International Symposium on Growth of Nitrides ISGN-1,2006, 2007.


Galia Pozina, Bo Monemar, Plamen Paskov, Carl Hemmingsson, Lars Hultman, H. Amano, I. Akasaki, Tanja Paskova, S. Figge, D. Hommel and A. Usui
  Metastability of the UV luminescence in Mg-doped GaN layers grown by MOVPE on quasi-bulk GaN templates
  , 2007.


 Web of Science® Times Cited: 5

T. Malinauskas, R. Aleksiejunas, K. Jarasiunas, B. Beaumont, P. Gibart, Anelia Kakanakova-Georgieva, Erik Janzén, Daniela Gogova, Bo Monemar and M. Heuken
  All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE- grown GaN
  Journal of Crystal Growth, Vol. 300, 2007.


 Web of Science® Times Cited: 26

Tanja Paskova, L. Becker, T. Böttcher, D. Hommel, Plamen Paskov and Bo Monemar
  Bending in HVPE grown GaN films: origin and reduction possibilities
  Proc. of the International Workshop on Nitride Semiconductors IWN2006,2006, 2007.


 Web of Science® Times Cited: 1

Tanja Paskova, Plamen Paskov, Vanya Darakchieva, R. Kröger, D. Hommel, Bo Monemar, E. Preble, A. Hanser, N.M. Williams and M. Tudor
  Strain-free low-defect-density bulk GaN with nonpolar orientation
  Proc. of the MRS Fall Meeting,2006, 2007.


Plamen Paskov, Bo Monemar, A. Toropov, Peder Bergman and A. Usui
  Two-electron transition spectroscopy of shallow donors in bulk GaN
  Proc. of the International Workshop on Nitride Semiconductors IWN2006,2006, 2007.


 Web of Science® Times Cited: 12

Tanja Paskova, R. Kroeger, D. Hommel, Plamen Paskov, Bo Monemar, E. Preble, A. Hanser, N.M. Williams and M. Tutor
  Nonpolar a- and m-plane bulk GaN sliced from boules: structural and optical characteristics
  Proc. of the International Workshop on Nitride Semiconductors IWN2006,2006, 2007.


 Web of Science® Times Cited: 12

Plamen Paskov, Bo Monemar, S. Kamiyama, H. Amano and I. Akasaki
  Optical properties of undoped, n-doped and p-doped GaN/AlN superlattices
  Proc. of the MRS Fall Meeting,2006, 2007.


R. Kröger, Tanja Paskova, Bo Monemar, S. Figge, D. Hommel and A. Rosenauer
  Defect structure of a-plane GaN grown by hydride and metal-organic vapor phase epitaxy on r-plane sapphire
  Proc. of the International Workshop on Nitride Semiconductors IWN2006,2006, 2007.


 Web of Science® Times Cited: 4

Vanya Darakchieva, Bo Monemar, Tanja Paskova, S. Einfeldt, D Hommel and S. Lourdudoss
  Phonons in strained AlGaN/GaN superlattices
  6th International Symposium on Blue Laser and Light Emitting Diodes,2006, 2007.


 Web of Science® Times Cited: 3

J. Freitas, B. Gil, Bo Monemar, G. Mueller and R. Rupp
  Preface
  E-MRS 2006 Symposium S: Material Science and Technology of Wide Bandgap Semiconductors, 2006 Spring Meeting of the European Materials Research Society,2006, 2006.


Hamid Harati Zadeh, Bo Monemar, Plamen Paskov, Per-Olof Holtz, Peder Bergman, H. Amano and I. Akasaki
  Optical Studies of Wide Band Gap III-Nitride Semiconductor Quantum Wells and Superlattices
  European Materials Research Society E-MRS fall meeting 2006,2006, 2006.


Evgeni Moskalenko, K.F. Karlsson, Per-Olof Holtz, Bo Monemar, V. Donchev, W.V. Schoenfeld, J.M. Garcia and P.M. Petroff
  Formation of the negatively charged exciton complexes in InAs quantum dots
  Seminar Excitons and Exciton Condensates in Confined Semiconductor Systems,2006, 2006.


T. Paskova, R. Kroeger, Plamen Paskov, S. Figge, D. Hommel, Bo Monemar, B.A. Haskell, P. Fini, J.S. Speck and S. Nakamura
  Microscopic emission properties of nonpolar a-plane GaN grown by HVPE
  International Symposium on Integrated Optoelectronic Devices Photonics West 2006,2006, 2006.


Vanya Darakchieva, T. Hofmann, M. Schubert, H. Lu, W.J. Schaff and Bo Monemar
  Conduction band effective mass anisotropy and nonparabolicity of InN
  Proc. of 3rd Workshop on Indium Nitride, 2006.


Hans Arwin, Vanya Darakchieva, Tanja Paskova, Plamen Paskov, Bo Monemar, Mattias Schubert, S Figge, D Hommel, B A Haskell, P T Fini and S Nakamura
  Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a-plane GaN
  ICSN-6,2005, 2005.


Daniela Gogova, S. Kanev, Bo Monemar, Ivan Gueorguiev Ivanov, Rositsa Yakimova and E. Talik
  Growth and characterization of free-standing HVPE GaN on two-step epitaxial lateral overgrown GaN template
  , 2005.


K. Jarasiunas, T. Malinauskas, A. Kadys, R. Aleksiejunas, M. Sudzius, S. Miasojedovas, S. Jursenas, A. Zukauskas, D Gogova, Anelia Kakanakova-Georgieva, Erik Janzén, Henrik Larsson, Bo Monemar, P. Gibart and B. Beaumont
  Application of picosecond four-wave mixing and photoluminescence techniques for investigation of carrier dynamics in bulk crystals and heterostructures of GaN
  phys. stat. sol. c, Vol. 2, 2005.


Anelia Kakanakova-Georgieva, A. Kasic, Christer Hallin, Bo Monemar and Erik Janzén
  Performance of III-nitride epitaxy in a low V-to-III gas-flow ratio range under nitrogen ambient in a hot-wall MOCVD system
  Phys. Stat. Sol. (c), Vol. 2, 2005.


Tanja Paskova, T. Suski, M. Bockowski, Plamen Paskov, Vanya Darakchieva, Bo Monemar, F. Tuomisto, K. Saarinen, N. Ashkenov, M. Schubert, C. Röder and D. Hommel
  High pressure annealing of HVPE GaN free-standing films: redistribution of defects and stress
  MRS Fall Meeting,2004, 2005.


Bo Monemar, Plamen Paskov, F. Tuomisto, K. Saarinen, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
  Oxygen related shallow acceptor in GaN
  MRS Fall Meeting,2004, 2005.


Tatiana Shubina, D.S. Plotnikov, Ya.V. Terentev, D.A. Vinokurov, N.A. Pihtin, I.S. Tarasov, S.V. Ivanov, J. Leymarie, A. Kavokin, A. Vasson, Bo Monemar, H. Lu, W.J Schaff and P.S. Kopev
  Surface-plasmon-related enhancement of luminescence in InN
  13 Int. Symposium Nanostructures: Physics and Technology,2005, 2005.


A. A. Toropov, Ya. V. Terentev, A. V. Lebedev, S. V. Sorokin, V. A. Kaygorodov, S. V. Ivanov, P. S. Kopev, Irina Buyanova, Peder Bergman, Bo Monemar and Weimin Chen
  Exciton magnetic polarons in a type II ZnMnSe/ZnSSe superlattice
  Physica status solidi (c)Special Issue: 11th International Conference on II–VI Compounds (II–VI 2003)Volume 1, Issue 4, 2004.


Evgeny Moskalenko, Fredrik Karlsson, V. Donchev, Per-Olof Holtz, Bo Monemar, W.V. Schoenfeld and P.M. Petroff
  The considerable changes induced by an additional infrared laser on the luminescence intensity from InAs/GaAs quantum dots
  27th International Conference on the Physics of Semiconductors ICPS-27,2004, 2004.


Plamen Paskov, Tanja Paskova, Per-Olof Holtz and Bo Monemar
  Polarisation dependent spectroscopy of the near bandgap emission in free-standing GaN
  2003 MRS Fall Meeting,2003, 2004.


A.A. Toropov, A.V. Lebedev, S.V. Sorokin, D.D. Solnyshkov, S.V. Ivanov, P.S. Kop'ev, Irina Buyanova, Weimin Chen and Bo Monemar
  Magneto-photoluminescence studies of diluted magnetic semiconductor type-II quantum wells ZnMnSe/ZnSSe
  Proceedings of the International Conference on Superlattices, Nano-structures and Nano-devices ICSNN 2002 o-structures and Nano-devices ICSNN 2002, 2003.


 Web of Science® Times Cited: 3

Bo Monemar, Plamen Paskov, H. Haratizadeh, Galia Pozina, Peder Bergman, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures
  Proceedings of SPIE, the International Society for Optical Engineering, 2003.


Tanja Paskova, Vanya Darakchieva, E. Valcheva, Plamen Paskov, Bo Monemar and M. Heuken
  Growth of GaN on a-plane sapphire: In-plane epitaxial relationships and lattice parameters
  Physica status solidi. B, Basic research, 2003.


 Web of Science® Times Cited: 6

A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Bottcher, D. Hommel, D.J. As, U. Kohler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M.R. Correia, S. Pereira, Vanya Darakchieva, Bo Monemar, H. Amano, I. Akasaki and G. Wagner
  Phonons and free-carrier properties of binary, ternary, and quaternary group-III nitride layers measured by infrared Spectroscopic Ellipsometry
  Physica Status Solidi. C, Current topics in solid state physics, 2003.


Vanya Darakchieva, M. Schubert, Jens Birch, A. Kasic, Sukkaneste Tungasmita, Tanja Paskova and Bo Monemar
  Generalized infrared ellipsometry study of thin epitaxial AlN layers with complex strain behavior
  , 2003.


 Web of Science® Times Cited: 3

E. Valcheva, Tanja Paskova, G.Z. Radnoczi, Lars Hultman, Bo Monemar, H. Amano and I. Akasaki
  Growth-induced defects in AlN/GaN superlattices with different periods
  , 2003.


 Web of Science® Times Cited: 6

G. Yu. Rudko, Irina Buyanova, Bo Monemar, Weimin Chen, A. A. Toropov, Y. Terentev, S. V. Sorokin, A. V. Lebedev, S. V. Ivanov and P. S. Kopev
  Hot exciton relaxation in diluted magnetic semiconductor ZnMnSe/CdSe superlattices
  26th International Conference on the Physics of Semiconductors,2002, 2003.


Fredrik Karlsson, Per-Olof Holtz, Evgeny Moskalenko, Bo Monemar, W.V. Schoenfeld, J.M. Garcia and P.M. Petroff
  The quantum dot as a sensitive probe for impurities in its vicinity
  11th International Conference on Modulated Semiconductor Structures MSS-11,2003, 2003.


Fredrik Karlsson, Per-Olof Holtz, Evgeny Moskalenko, Bo Monemar, W.V. Schoenfeld, J.M. Garcia and P.M. Petroff
  Step-like dependence of the exciton charge-state on the excitation energy in single In(Ga)As/GaAs quantum dots
  ICPS,2003, 2003.


Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Photoluminescence study of Si doped GaN/AlGaN multi quantum wells
  ICPS 2002,2002, 2003.


M Godlewski, E Guziewicz, K Leonardi, D Hommel, Peder Bergman and Bo Monemar
  Influence of structural properties and of growth conditions on exciton properties in ZnCdSe/ZnSe quantum well structures
  Materials Science Forum, Vols. 389-393, 2002.


M Godlewski, VY Ivanov, A Khachapuridze, R Narkowicz, Peder Bergman and Bo Monemar
  Interaction of microwave heated hot carriers with recombination centers
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 1

Peder Bergman, Galia Pozina, Bo Monemar, S Kamiyama, M Iwaya, H Amano and I Akasaki
  Photoluminescence and electroluminescence characterization of InxGa1-x/InyGa1-yN multiple quantum well light emitting diodes
  Materials Science Forum, Vols. 389-393, 2002.


Bo Monemar, Plamen Paskov, Tanja Paskova, Peder Bergman, Galia Pozina, Weimin Chen, P.N. Hai, Irina A. Buyanova, H. Amano and I. Akasaki
  Optical characterization of III-nitrides
  , 2002.


 Web of Science® Times Cited: 20

M. Godlewski, V.Yu. Ivanov, Peder Bergman, Bo Monemar, Z. Golacki and G. Karczewski
  Mn2+ intra-shell recombination in bulk and quantum dots of II-VI compounds
  Journal of Alloys and Compounds, 2002.


 Web of Science® Times Cited: 21

Tanja Paskova, Vanya Darakchieva, Plamen Paskov, U. Sodervall and Bo Monemar
  Growth and separation related properties of HVPE-GaN free-standing films
  Journal of Crystal Growth, 2002.


 Web of Science® Times Cited: 26

Irina Buyanova, Weimin Chen, Bo Monemar, A. A. Toropov, Ya. V. Terentev, S. V. Sorokin, A. V. Lebedev, S. V. Ivanov and P. S. Kopev
  On the spin injection in ZnMnSe/ZnCdSe heterostructures
  , 2002.


 Web of Science® Times Cited: 5

Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  Photoluminescence study of Si doped GaN/GaN/Al0.07Ga0.93N multi quantum wells
  NANO-7/ECOSS-21,2002, 2002.


Fredrik Karlsson, Per-Olof Holtz, Evgenii Moskalenko, Bo Monemar, W.V. Schoenfeld, J.M. Garcia and P.M. Petroff
  Quantum dots as a sensitive tool to monitor charge
  14th Indium Phosphide and Related Materials Conference IPRM 2002,2002, 2002.


Hamid Harati Zadeh, Plamen Paskov, Galia Pozina, Per-Olof Holtz, Bo Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki
  The influence of Si-donor doping on the exciton localization in modulation- doped GaN/AlGaN multi quantum wells
  14th Indium Phosphide and Related Materials Conference IPRM 2002,2002, 2002.


Galia Pozina, JP Bergman, Bo Monemar, M Iwaya, S Nitta, H Amano and I Akasaki
  Luminescence of InGaN/GaN multiple quantum wells grown by mass-transport
  Materials Science Forum, Vols. 353-356, 2001.


A. A. Toropov, Y. Terentev, S. V. Sorokin, A. V. Lebedev, S. V. Ivanov, P. S. Kopev, Irina Buyanova, Weimin Chen and Bo Monemar
  Injection of spin polarized carriers from a semimagnetic ZnMnSe/CdSe superlattice to a nonmagnetic CdSe quantum well
  9th Int Symp Nanostructures: Physics and Technology,2001, 2001.


P. N. Hai, Weimin Chen, Irina Buyanova, Bo Monemar, H. Amano and I. Akasaki
  Identification of a Ga-related intrinsic defect in as-grown Zn-doped GaN
  25th International Conference on the Physics of Semiconductors,2000, 2001.


Fredrik Karlsson, Evgeny Moskalenko, Per-Olof Holtz, Bo Monemar, W.V. Schoenfeld, J.M. Garcia and P.M. Petroff
  Carrier diffusion in the barrier enabling formation of charged excitons in InAs/GaAs quantum dots
  XXX International School on the Physics of Semiconducting Compounds,2001, 2001.


 Web of Science® Times Cited: 2

Evgenii Moskalenko, Fredrik Karlsson, Per-Olof Holtz, Bo Monemar, W.V. Schoenfeld, J.M. Garcia and P.M. Petroff
  The formation of the charged exciton complexes in self-assembled InAs single quantum dots
  The 9th International Symposium on Nanostructures,2001, 2001.


Tanja Paskova, Sukkaneste Tungasmita, E Valcheva, EB Svedberg, B Arnaudov, S Evtimova, Per Persson, Anne Henry, R Beccard, M Heuken and Bo Monemar
  Hydride vapour phase homoepitaxial growth of GaN on MOCVD-grown 'templates'
  MRS99 Fall Meeting, 2000.


A. A. Toropov, S. V. Sorokin, K. A. Kuritsyn, S. V. Ivanov, P. S. Kopev, G. Reuscher, A. Waag, G. Landwehr, Matthias Wagner, Weimin Chen and Bo Monemar
  Magnetooptical studies of CdSe/(Zn,Mn)Se semimagnetic nanostructures
  8th International Symposium Nanostructures: Physics Technology,2000, 2000.


Weimin Chen, P. N. Hai, Irina Buyanova, Bo Monemar, H. P. Xin and C. W. Tu
  Optical Detection of Cyclotron Resonance (ODCR) in GaNAs/GaAs Quantum Well Structures
  , 2000.


Irina Buyanova, Weimin Chen, Bo Monemar, H. P. Xin and C. W. Tu
  Resonant excitation spectroscopies of GaNAs/GaAs quantum structures
  , 2000.


Son Tien Nguyen, P. N. Hai, A. Shuja, Weimin Chen, J. L. Lindström, Bo Monemar and Erik Janzén
  The Carbon Vacancy Pair in 4H and 6H SiC
  Materials Science Forum, Vol. 338 - 342, 2000.


 Web of Science® Times Cited: 7

Son Tien Nguyen, P. N. Hai, Weimin Chen, Christer Hallin, Bo Monemar and Erik Janzén
  Hole Effective Masses in 4H SiC Determined by Optically Detected Cyclotron Resonance
  Materials Science Forum, Vol. 338 - 342, 2000.


Weimin Chen, Irina Buyanova, E. Sörman, P. N. Hai, Matthias Wagner, Erik Janzén and Bo Monemar
  Magneto-optical spectroscopy of defects in wide bandgap semiconductors: GaN and SiC
  Proceedings Conference on Optoelectronic and Microelectronic Materials and Devices, 2000.


Plamen Paskov, Per-Olof Holtz, Bo Monemar, J.M. Garcia, W.V. Schoenfeld and P.M. Petroff
  Optical up-conversion processes in InAs quantum dots
  the 25th International Conference on the Physics of Semiconductors ICPS-25,2000, 2000.


Peder Bergman, Galia Pozina, Bo Monemar, J. Dalfors, Bo Sernelius, Per-Olof Holtz, H. Amano and I. Akasaki
  Radiative recombination in InGaN/GaN multiple quantum well
  ICSCRM 99,1999, 2000.


Irina Buyanova, Matthias Wagner, Weimin Chen, Bo Monemar, J. L. Lindström, H. Amano and I. Akasaki
  Photoluminescence Spectroscopy of the 0.88 eV Emission in Electron-Irradiated GaN
  APS March Meeting,1999, 1999.


Bo Monemar, Peder Bergman, Galia Pozina, Irina Buyanova, Weimin Chen, Matthias Wagner and Tanja Paskova
  Defects in Gallium Nitride
  International Workshop on Materials Science,1999, 1999.


M. Godlewski, T. Suski, I. Grzegory, S. Porowski, Peder Bergman, Weimin Chen and Bo Monemar
  Mechanism of radiative recombination in acceptor-doped bulk GaN crystals
  20th International Conference on Defects in Semiconductors ICDS-20,1999, 1999.


Irina Buyanova, Weimin Chen, Bo Monemar, H. P. Xin and C. W. Tu
  Effect of Growth Conditions on the Photoluminescence of GaNAs/GaAs Quantum Structures
  Joint International Meeting the 196th Meeting of The Electrochemical Society ECS and the 1999 Fall Meeting of The Electrochemical Society of Japan ECSJ,1999, 1999.


Weimin Chen, P. N. Hai, Matthias Wagner, Irina Buyanova, Bo Monemar, H. Amano, I. Akasaki, H. P. Xin and C. W. Tu
  Optical and Microwave Double Resonance of III-nitrides
  Joint International Meeting the 196th Meeting of The Electrochemical Society ECS and the 1999 Fall Meeting of The Electrochemical Society of Japan ECSJ,1999, 1999.


M. Godlewski, T. Suski, I. Grzegory, S. Porowski, Peder Bergman, Weimin Chen and Bo Monemar
  Photoluminescence mechanisms in undoped and in Mg doped bulk GaN
  24th International Conference on the Physics of Semiconductors,1998, 1999.


Matthias Wagner, Irina Buyanova, Weimin Chen, Bo Monemar, J. L. Lindström, H. Amano and I. Akasaki
  Internal transitions of a deep level defect in GaN studied by photoluminescence and optically detected magnetic resonance
  24th International Conference on the Physics of Semiconductors,1998, 1999.


Weimin Chen, Irina Buyanova, Matthias Wagner, Bo Monemar, J. L. Lindström, H. Amano and I. Akasaki
  Role of the Substitutional Oxygen Donor in the Residual n-type Conductivity in GaN
  , 1999.


Son Tien Nguyen, Weimin Chen, J. L. Lindström, Bo Monemar and Erik Janzén
  Carbon-vacancy related defects in 4H- and 6H-SiC
  Materials Science and Engineering B, Vol. 61-62, 1999.


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