Publications for Björn Magnusson
Co-author map based on ISI articles 2007-
Journal Articles
Andreas Gällström, Björn Magnusson, Franziska Beyer, Adam Gali, Nguyen Son Tien, Stefano Leone, Ivan Gueorguiev Ivanov, Carl Hemmingsson, Anne Henry and Erik Janzén
Optical identification and electronic configuration of tungsten in 4H-and 6H-SiC
Physica. B, Condensed matter, 2012, 407(10), 1462-1466.
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Erik Janzén, Adam Gali, Patrick Carlsson, Andreas Gällström, Björn Magnusson and N T Son
The silicon vacancy in SiC
PHYSICA B-CONDENSED MATTER, 2009, 404(22), 4354-4358.
Web of Science® Times Cited: 7 |
Son Tien Nguyen, Patrick Carlsson, Andreas Gällström, Björn Magnusson and Erik Janzén
Deep levels and carrier compensation in V-doped semi-insulating 4H-SiC
Applied Physics Letters, 2007, 91(20), .
Web of Science® Times Cited: 3 |
R. Aavikko, K. Saarinen, F. Tuomisto, Björn Magnusson, Son Tien Nguyen and Erik Janzén
Clustering of vacancy defects in high-purity semi-insulating SiC
Physical Review B. Condensed Matter and Materials Physics, 2007, 75(8), 085208.
Web of Science® Times Cited: 15 |
Son Tien Nguyen, Patrick Carlsson, Jawad ul-Hassan, Björn Magnusson and Erik Janzén
Defects and carrier compensation in semi-insulating 4H-SiC substrates
Physical Review B Condensed Matter, 2007, 75(15), .
Web of Science® Times Cited: 28 |
B. Arnaudov, Tanja Paskova, Plamen Paskov, Björn Magnusson, Bo Monemar, H. Lu and W.J. Schaff
On the nature of the near bandedge luminescence of InN epitaxial layers
AIP Conference Proceedings, 2005, 772, 285-286.
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B Arnaudov, Tanja Paskova, Plamen Paskov, Björn Magnusson, E Valcheva, Bo Monemar, H Lu, WJ Schaff, H Amano and I Akasaki
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
Physical Review B. Condensed Matter and Materials Physics, 2004, 69(11), .
Web of Science® Times Cited: 126 |
Daniela Gogova, A Kasic, Henrik Larsson, B Pecz, Rositsa Yakimova, Björn Magnusson, Bo Monemar, F Tuomisto, K Saarinen, C Miskys, M Stutzmann, C Bundesmann and M Schubert
Optical and structural characteristics of virtually unstrained bulk-like GaN
Japanese Journal of Applied Physics, 2004, 43(4A), 1264-1268.
Web of Science® Times Cited: 19 |
B. Arnaudov, Tanja Paskova, Plamen Paskov, Björn Magnusson, E. Valcheva, Bo Monemar, H. Lu, W.J. Schaff, H. Amano and I. Akasaki
Free-to-bound radiative recombination in highly conducting InN epitaxial layers
Superlattices and Microstructures, 2004, 36(4-6), 563-571.
Web of Science® Times Cited: 6 |
Ivan Gueorguiev Ivanov, Björn Magnusson and Erik Janzén
Optical selection rules for shallow donors in 4H-SiC and ionization energy of the nitrogen donor at the hexagonal site
Physical Review B. Condensed Matter and Materials Physics, 2003, 67(16), .
Web of Science® Times Cited: 13 |
Ivan Gueorguiev Ivanov, Björn Magnusson and Erik Janzén
Analysis of the sharp donor-acceptor pair luminescence in 4H-SiC doped with nitrogen and aluminum
Physical Review B. Condensed Matter and Materials Physics, 2003, 67(16), .
Web of Science® Times Cited: 12 |
Matthias Wagner, Björn Magnusson, Weimin Chen and Erik Janzén
UD-3 defect in 4H, 6H, and 15R SiC: Electronic structure and phonon coupling
Physical Review B. Condensed Matter and Materials Physics, 2002, 66(11), .
Web of Science® Times Cited: 9 |
Tien Son Nguyen, Björn Magnusson and Erik Janzén
Photoexcitation-electron-paramagnetic-resonance studies of the carbon vacancy in 4H-SiC
Applied Physics Letters, 2002, 81(21), 3945-3947.
Web of Science® Times Cited: 52 |
Matthias Wagner, Ivan Gueorguiev Ivanov, Liutauras Storasta, Peder Bergman, Björn Magnusson, Weimin Chen and Erik Janzén
Photoluminescence upconversion in 4H-SiC
Applied Physics Letters, 2002, 81(14), 2547.
Web of Science® Times Cited: 1 |
Matthias Wagner, Björn Magnusson, Weimin Chen, Erik Janzén, E. Sörman, Christer Hallin and J. L. Lindström
Electronic structure of the neutral silicon vacancy in 4H and 6H SiC
Physical review. B, Condensed matter and materials physics, 2000, 62(24), 16555-16560.
Web of Science® Times Cited: 32 |
Son Tien Nguyen, A. Ellison, Björn Magnusson, M. F. MacMillan, Weimin Chen, Bo Monemar and Erik Janzén
Photoluminescence and Zeeman effect in chromium-doped 4H and 6H SiC
Journal of Applied Physics, 1999, 86(8), 4348.
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Chapters in Books
Erik Janzén, Adam Gali, Anne Henry, Ivan Gueorguiev Ivanov, Björn Magnusson and Son Tien Nguyen
Defects in SiC
Defects in Microelectronic Materials and Devices, Taylor and Francis LLC, 2008, 615.
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Son Tien Nguyen, Matthias Wagner, Carl Hemmingsson, Liutauras Storasta, Björn Magnusson, Weimin Chen, S. Greulich-Weber, J.-M. Spaeth and Erik Janzén
Electronic structure of deep defects in SiC
Silicon Carbide: Recent Major Advances, Springer Verlag, 2004, .
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Conference Articles
Andreas Gällström, Björn Magnusson, Franziska Beyer, Adam Gali, Nguyen Tien Son, Stefano Leone, Ivan G. Ivanov, Anne Henry, Carl Hemmingsson and Erik Janzén
Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC
Materials Science Forum Vols 717 - 720, 2012.
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Patrick Carlsson, Nguyen Tien Son, Björn Magnusson, J. Isoya, N. Morishita, T. Ohshima and Erik Janzén
The EI4 EPR centre in 6H SiC
Physica Scripta, Vol. T141, 2010.
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Tien Son Nguyen, Patrick Carlsson, J. Isoya, N. Morishita, T. Ohshima, Björn Magnusson and Erik Janzén
The carbon vacancy related EI4 defect in 4H-SiC
Materials Science Forum. Vols. 645-648, 2010.
Web of Science® Times Cited: 1 Fulltext 
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Andreas Gällström, Björn Magnusson and Erik Janzén
Optical identification of Mo related deep level defect in 4H and 6H SiC
Materials Science Forum Vols. 615-617, 2009.
Web of Science® Times Cited: 2
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Erik Janzén, Adam Gali, Patrick Carlsson, Andreas Gällström, Björn Magnusson and Son Tien Nguyen
The Silicon vacancy in SiC
Materials Science Forum Vols. 615-617, 2009.
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Andreas Gällström, Björn Magnusson, A. Thuaire, Anne Henry, Plamen Paskov and Erik Janzén
The Electronic Structure of the UD-4 defect in 4H, 6H and 15R SiC
Materials Science Forum, Vols. 600-603, 2009.
Web of Science® Times Cited: 1
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S. Hahn, Franziska Beyer, Andreas Gällström, Patrick Carlsson, Anne Henry, Björn Magnusson, J. Niklas and Erik Janzén
Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material
Materials Science Forum Vols. 600-603, 2009.
Web of Science® Times Cited: 2
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Son Tien Nguyen, Patrick Carlsson, Andreas Gällström, Björn Magnusson and Erik Janzén
Deep Levels Responsible for Semi-insulating Behaviour in Vanadium-doped 4H-SiC Substrates
Materials Science Forum, Vols. 600-603, 2009.
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Patrick Carlsson, Son Tien Nguyen, Björn Magnusson and Erik Janzén
Intrinsic Defects in HPSI 6H-SiC: an EPR Study
Materials Science Forum, Vols. 600-603, 2009.
Web of Science® Times Cited: 1
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Son Tien Nguyen, Patrick Carlsson, Björn Magnusson and Erik Janzén
Intrinsic Defects in Semi-Insulating SiC: Deep Levels and their Roles in Carrier Compensation
Materials Science Forum, Vols. 556-557, 2007.
Web of Science® Times Cited: 3
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Son Tien Nguyen, Patrick Carlsson, Andreas Gällström, Björn Magnusson and Erik Janzén
Prominent defects in semi-insulating SiC substrates
Physica B, Vol. 401-402, 2007.
Web of Science® Times Cited: 7
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Andreas Gällström, Björn Magnusson, Patrick Carlsson, Son Tien Nguyen, Anne Henry, Franziska Beyer, Mikael Syväjärvi, Rositsa Yakimova and Erik Janzén
Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC
Materials Science Forum, vol. 556-557, 2007.
Web of Science® Times Cited: 4
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Erik Janzén, Tien Son Nguyen, Björn Magnusson and A Ellison
Intrinsic defects in high-purity SiC
Microelectronic Engineering, Vol. 83, 2006.
Web of Science® Times Cited: 10
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Tien Son Nguyen, T Umeda, J Isoya, Adam Gali, M Bockstedte, Björn Magnusson, A Ellison, N Morishita, T Ohshima, H Itoh and Erik Janzén
Identification of divacancies in 4H-SiC
Physica B: Condensed Matter, Vols. 376-377, 2006.
Web of Science® Times Cited: 1
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R. Aavikko, K. Saarinen, Björn Magnusson and Erik Janzén
Clustering of Vacancies in Semi-Insulating SiC Observed with Positron Spectroscopy
Materials Science Forum, Vols. 527-529, 2006.
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Son Tien Nguyen, Patrick Carlsson, Björn Magnusson and Erik Janzén
Characterization of semi-insulating SiC
Mater. Res. Soc. Symp. Proc. 911, 2006.
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Son Tien Nguyen, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, Björn Magnusson, A. Ellison, N. Morishita, T. Ohshima, H. Itoh and Erik Janzén
Divacancy model for P6/P7 centers in 4H- and 6H-SiC
Materials Science Forum, Vols. 527-529, 2006.
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A. Thuaire, Anne Henry, Björn Magnusson, Peder Bergman, Weimin Chen, Erik Janzén, M. Mermoux and E. Bano
Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques
Materials Science Forum, Vols. 527-529, 2006.
Web of Science® Times Cited: 1
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Björn Magnusson, R. Aavikko, K. Saarinen, Son Tien Nguyen and Erik Janzén
Optical Studies of Deep Centers in Semi-Insulating SiC
Materials Science Forum, Vols. 527-529, 2006.
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R Aavikko, K Saarinen, Björn Magnusson and Erik Janzén
Observation of vacancy clusters in HTCVD grown SiC
Materials Science Forum, Vols. 483-485, 2005.
Web of Science® Times Cited: 2
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Liutauras Storasta, R Aleksiejunas, M Sudzius, A Kadys, T Malinauskas, K Jarasiunas, Björn Magnusson and Erik Janzén
Nonequilibrium carrier diffusion and recombination in heavily-doped and semi-insulating bulk HTCVD grown 4H-SiC crystals
Materials Science Forum, Vols. 483-485, 2005.
Web of Science® Times Cited: 2
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Björn Magnusson and Erik Janzén
Optical Characterization of Deep Level Defects in SiC
Materials Science Forum, Vols. 483-485, 2005.
Web of Science® Times Cited: 24
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A Ellison, Björn Magnusson, B Sundqvist, Galia Pozina, Peder Bergman, Erik Janzén and A Vehanen
SiC crystal growth by HTCVD
Materials Science Forum, Vols. 457-460, 2004.
Web of Science® Times Cited: 37
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Z. Zolnai, Son Tien Nguyen, Björn Magnusson, Christer Hallin and Erik Janzén
Annealing behaviour of vacancy- and antisite-related defects in electron-irradiated 4H-SiC
Mater. Sci. Forum, Vol. 457-460, 2004.
Web of Science® Times Cited: 10
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L. Kassamakova-Kolaklieva, Liutauras Storasta, Ivan Gueorguiev Ivanov, Björn Magnusson, S. Contreras, C. Consejo, J. Pernot, M. Zielinski and Erik Janzén
Temperature-Dependent Hall Effect Measurements in Low - Compensated p-Type 4H-SiC
Mater. Sci. Forum, Vol. 457-460, 2004.
Web of Science® Times Cited: 4
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Son Tien Nguyen, Björn Magnusson, Z. Zolnai, A. Ellison and Erik Janzén
Defects in high-purity semi-insulating SiC
Mater. Sci. Forum, Vol. 457-460, 2004.
Web of Science® Times Cited: 50
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Erik Janzén, Ivan Gueorguiev Ivanov, Son Tien Nguyen, Björn Magnusson, Anne Henry and J. Isoya
Defects in SiC
International Seminar on SiC and Related Materials,2004, 2004.
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Nguyen Son, Björn Magnusson, Z. Zolnai, A. Ellison and Erik Janzén
Magnetic Resonance of Large-area Semi-insulating SiC Substrates
Bulletin of The American Physical Society Meeting, Vol. 48, 2003.
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Jens Eriksson, N Rorsman, H Zirath, Anne Henry, Björn Magnusson, A Ellison and Erik Janzén
A comparison of MESFETs on different 4H-Silicon carbide semi-insulating substrates
Materials Science Forum Vols. 433-434, 2003.
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Liutauras Storasta, Björn Magnusson, Anne Henry, MK Linnarsson, JP Bergman and Erik Janzén
Correlation between electrical and optical mapping of boron related complexes in 4H-SiC
Materials Science Forum, Vols. 433-436, 2003.
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Matthias Wagner, Ivan Gueorguiev Ivanov, Liutauras Storasta, JP Bergman, Björn Magnusson, Weimin Chen and Erik Janzén
Photoluminescence up-conversion processes in SiC
Materials Science Forum, Vols. 433-436, 2003.
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Björn Magnusson, JP Bergman and Erik Janzén
Time-resolved photoluminescence of deep centers in semi-insulating 4H-SiC
Materials Science Forum, Vols. 433-436, 2003.
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Tien Son Nguyen, Björn Magnusson, Z Zolnai, A Ellison and Erik Janzén
Defects in semi-insulating SiC substrates
Materials Science Forum, Vols. 433-436, 2003.
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A Ellison, Björn Magnusson, Tien Son Nguyen, Liutauras Storasta and Erik Janzén
HTCVD grown semi-insulating SiC substrates
Materials Science Forum, Vols. 433-436, 2003.
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B Sundqvist, A Ellison, A Jonsson, A Henry, C Hallin, JP Bergman, Björn Magnusson and Erik Janzén
Growth of high quality p-type 4H-SiC substrates by HTCVD
Materials Science Forum, Vols. 433-436, 2003.
Web of Science® Times Cited: 1
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Erik Janzén, Ivan Gueorguiev Ivanov, Son Tien Nguyen, Björn Magnusson, Z Zolnai, Anne Henry, Peder Bergman, Liutauras Storasta and Fredrik Carlsson
Defects in SiC
Physica B: Condensed Matter, Vols. 340-342, 2003.
Web of Science® Times Cited: 14
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Anelia Kakanakova-Georgieva, Urban Forsberg, Björn Magnusson, Rositsa Yakimova and Erik Janzén
Growth of AlN films by hot-wall CVD and sublimation techniques: Effect of growth cell pressure
Materials Science Forum, Vols. 389-393, 2002.
Web of Science® Times Cited: 1
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Anne Henry, A Ellison, Urban Forsberg, Björn Magnusson, Galia Pozina and Erik Janzén
Characterization of bulk and epitaxial SiC material using photoluminescence spectroscopy
Materials Science Forum, Vols. 389-393, 2002.
Web of Science® Times Cited: 18
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Björn Magnusson, A Ellison and Erik Janzén
Properties of the UD-1 deep-level center in 4H-SiC
Materials Science Forum, Vols. 389-393, 2002.
Web of Science® Times Cited: 7
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JP Bergman, H Jakobsson, Liutauras Storasta, Fredrik Carlsson, Björn Magnusson, S Sridhara, Galia Pozina, H Lendenmann and Erik Janzén
Characterisation and defects in silicon carbide
Materials Science Forum, Vols. 389-393, 2002.
Web of Science® Times Cited: 30
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Matthias Wagner, Björn Magnusson, Weimin Chen and Erik Janzén
Electronic structure of the UD3 defect in 4H and 6H SiC
Materials Science Forum, Vols. 389 - 393, 2002.
Web of Science® Times Cited: 2
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Björn Magnusson, A. Ellison, Liutauras Storasta and Erik Janzén
Infrared absorption and annealing behavior of semi-insulating 4H SiC HTCVD substrates
<em>Proc. of the MRS Spring Meeting (2001), Vol. <em>680E</em></em>, 2001.
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Björn Magnusson, A. Ellison, Son Tien Nguyen and Erik Janzén
Deep-level luminescence at 1.0 eV in 6H SiC
Mat. Res. Soc. Symp. Proc., Vol. 640, 2001.
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A. Ellison, Björn Magnusson, Carl Hemmingsson, W. Magnusson, Tihomir Iakimov, Liutauras Storasta, Anne Henry, N. Henelius and Erik Janzén
HTCVD Growth of Semi-Insulating 4H-SiC Crystals With Low Defect Density
Mat. Res. Soc. Symp. Proc., Vol. 640, 2001.
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Fredrik Carlsson, Liutauras Storasta, Björn Magnusson, Peder Bergman, K Skold and Erik Janzén
Neutron irradiation of 4H SiC
Materials Science Forum, Vols. 353-356, 2001.
Web of Science® Times Cited: 5
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Anne Henry, Björn Magnusson, MK Linnarsson, A Ellison, Mikael Syväjärvi, Rositsa Yakimova and Erik Janzén
Presence of hydrogen in SiC
Materials Science Forum, Vols. 353-356, 2001.
Web of Science® Times Cited: 8
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Björn Magnusson, A Ellison, Fredrik Carlsson, Tien Son Nguyen and Erik Janzén
As-grown and process-induced intrinsic deep-level luminescence in 4H SiC
Materials Science Forum, Vols. 353-356, 2001.
Web of Science® Times Cited: 4
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Erik Janzén, Anne Henry, Peder Bergman, A. Ellison and Björn Magnusson
Material characterization need for SiC-based devices
Sci. Eng. B, Vol. 4, 2001.
Web of Science® Times Cited: 30
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Peder Bergman, Liutauras Storasta, Fredrik Carlsson, S. Sridhara, Björn Magnusson and Erik Janzén
Defects in 4H silicon carbide
Physica B, Vols. 308-310, 2001.
Web of Science® Times Cited: 9
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Björn Magnusson, Matthias Wagner, Tien Son Nguyen and Erik Janzén
Vanadium-related center in 4H silicon carbide
Materials Science Forum, Vols. 338-343, 2000.
Web of Science® Times Cited: 1
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Matthias Wagner, Björn Magnusson, E. Sörman, Christer Hallin, J. L. Lindström, Weimin Chen and Erik Janzén
Zeeman spectroscopy of the neutral silicon vacancy in 6H and 4H SiC
Physica B. Vol. 273-274, 1999.
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Ph.D., Lic. Theses
