Publications for Björn Magnusson
Co-author map based on ISI articles 2007-

Keywords

vacancy ud-1 temperature substrates spectra silicon sic semi-insulating photoluminescence optical lines htcvd ev energy defects defect absorption 6h 4h-sic 4h

Journal Articles

Andreas Gällström, Björn Magnusson, Franziska Beyer, Adam Gali, Nguyen Son Tien, Stefano Leone, Ivan Gueorguiev Ivanov, Carl Hemmingsson, Anne Henry and Erik Janzén
  Optical identification and electronic configuration of tungsten in 4H-and 6H-SiC
  Physica. B, Condensed matter, 2012, 407(10), 1462-1466.
 Web of Science® Times Cited: 1

Erik Janzén, Adam Gali, Patrick Carlsson, Andreas Gällström, Björn Magnusson and Nguyen Tien Son
  The Silicon vacancy in SiC
  Materials Science Forum, 2009, 615-617, 347-352.
 Web of Science® Times Cited: 3

Erik Janzén, Adam Gali, Patrick Carlsson, Andreas Gällström, Björn Magnusson and Nguyen Tien Son
  The silicon vacancy in SiC
  Physica. B, Condensed matter, 2009, 404(22), 4354-4358.
 Web of Science® Times Cited: 8

R. Aavikko, K. Saarinen, F. Tuomisto, Björn Magnusson, Son Tien Nguyen and Erik Janzén
  Clustering of vacancy defects in high-purity semi-insulating SiC
  Physical Review B. Condensed Matter and Materials Physics, 2007, 75(8), 085208.
 Web of Science® Times Cited: 18

Son Tien Nguyen, Patrick Carlsson, Andreas Gällström, Björn Magnusson and Erik Janzén
  Deep levels and carrier compensation in V-doped semi-insulating 4H-SiC
  Applied Physics Letters, 2007, 91(20), .
 Web of Science® Times Cited: 3

Son Tien Nguyen, Patrick Carlsson, Jawad ul-Hassan, Björn Magnusson and Erik Janzén
  Defects and carrier compensation in semi-insulating 4H-SiC substrates
  Physical Review B Condensed Matter, 2007, 75(15), .
 Web of Science® Times Cited: 31

B. Arnaudov, Tanja Paskova, Plamen Paskov, Björn Magnusson, Bo Monemar, H. Lu and W.J. Schaff
  On the nature of the near bandedge luminescence of InN epitaxial layers
  AIP Conference Proceedings, 2005, 772, 285-286.

B Arnaudov, Tanja Paskova, Plamen Paskov, Björn Magnusson, E Valcheva, Bo Monemar, H Lu, WJ Schaff, H Amano and I Akasaki
  Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
  Physical Review B. Condensed Matter and Materials Physics, 2004, 69(11), .
 Web of Science® Times Cited: 139

Daniela Gogova, A Kasic, Henrik Larsson, B Pecz, Rositsa Yakimova, Björn Magnusson, Bo Monemar, F Tuomisto, K Saarinen, C Miskys, M Stutzmann, C Bundesmann and M Schubert
  Optical and structural characteristics of virtually unstrained bulk-like GaN
  Japanese Journal of Applied Physics, 2004, 43(4A), 1264-1268.
 Web of Science® Times Cited: 20

B. Arnaudov, Tanja Paskova, Plamen Paskov, Björn Magnusson, E. Valcheva, Bo Monemar, H. Lu, W.J. Schaff, H. Amano and I. Akasaki
  Free-to-bound radiative recombination in highly conducting InN epitaxial layers
  Superlattices and Microstructures, 2004, 36(4-6), 563-571.
 Web of Science® Times Cited: 6

Ivan Gueorguiev Ivanov, Björn Magnusson and Erik Janzén
  Optical selection rules for shallow donors in 4H-SiC and ionization energy of the nitrogen donor at the hexagonal site
  Physical Review B. Condensed Matter and Materials Physics, 2003, 67(16), .
 Web of Science® Times Cited: 14

Ivan Gueorguiev Ivanov, Björn Magnusson and Erik Janzén
  Analysis of the sharp donor-acceptor pair luminescence in 4H-SiC doped with nitrogen and aluminum
  Physical Review B. Condensed Matter and Materials Physics, 2003, 67(16), .
 Web of Science® Times Cited: 13

Matthias Wagner, Björn Magnusson, Weimin Chen and Erik Janzén
  UD-3 defect in 4H, 6H, and 15R SiC: Electronic structure and phonon coupling
  Physical Review B. Condensed Matter and Materials Physics, 2002, 66(11), .
 Web of Science® Times Cited: 9

Tien Son Nguyen, Björn Magnusson and Erik Janzén
  Photoexcitation-electron-paramagnetic-resonance studies of the carbon vacancy in 4H-SiC
  Applied Physics Letters, 2002, 81(21), 3945-3947.
 Web of Science® Times Cited: 54

Matthias Wagner, Ivan Gueorguiev Ivanov, Liutauras Storasta, Peder Bergman, Björn Magnusson, Weimin Chen and Erik Janzén
  Photoluminescence upconversion in 4H-SiC
  Applied Physics Letters, 2002, 81(14), 2547.
 Web of Science® Times Cited: 1

Matthias Wagner, Björn Magnusson, Weimin Chen, Erik Janzén, E. Sörman, Christer Hallin and J. L. Lindström
  Electronic structure of the neutral silicon vacancy in 4H and 6H SiC
  Physical review. B, Condensed matter and materials physics, 2000, 62(24), 16555-16560.
 Web of Science® Times Cited: 35

Son Tien Nguyen, A. Ellison, Björn Magnusson, M. F. MacMillan, Weimin Chen, Bo Monemar and Erik Janzén
  Photoluminescence and Zeeman effect in chromium-doped 4H and 6H SiC
  Journal of Applied Physics, 1999, 86(8), 4348.

Chapters in Books

Erik Janzén, Adam Gali, Anne Henry, Ivan Gueorguiev Ivanov, Björn Magnusson and Son Tien Nguyen
  Defects in SiC
  Defects in Microelectronic Materials and Devices, Taylor and Francis LLC, 2008, 770.


Son Tien Nguyen, Matthias Wagner, Carl Hemmingsson, Liutauras Storasta, Björn Magnusson, Weimin Chen, S. Greulich-Weber, J.-M. Spaeth and Erik Janzén
  Electronic structure of deep defects in SiC
  Silicon Carbide: Recent Major Advances, Springer Verlag, 2004, -899.


Conference Articles

Andreas Gällström, Björn Magnusson, Franziska Beyer, Adam Gali, Nguyen Tien Son, Stefano Leone, Ivan G. Ivanov, Anne Henry, Carl Hemmingsson and Erik Janzén
  Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC
  Materials Science Forum Vols 717 - 720, 2012.


Patrick Carlsson, Nguyen Tien Son, Björn Magnusson, J. Isoya, N. Morishita, T. Ohshima and Erik Janzén
  The EI4 EPR centre in 6H SiC
  Physica Scripta, Vol. T141, 2010.


Tien Son Nguyen, Patrick Carlsson, J. Isoya, N. Morishita, T. Ohshima, Björn Magnusson and Erik Janzén
  The carbon vacancy related EI4 defect in 4H-SiC
  Materials Science Forum. Vols. 645-648, 2010.


 Web of Science® Times Cited: 1  Fulltext PDF

Andreas Gällström, Björn Magnusson and Erik Janzén
  Optical identification of Mo related deep level defect in 4H and 6H SiC
  Materials Science Forum Vols. 615-617, 2009.


 Web of Science® Times Cited: 3

Andreas Gällström, Björn Magnusson, A. Thuaire, Anne Henry, Plamen Paskov and Erik Janzén
  The Electronic Structure of the UD-4 defect in 4H, 6H and 15R SiC
  Materials Science Forum, Vols. 600-603, 2009.


 Web of Science® Times Cited: 1

S. Hahn, Franziska Beyer, Andreas Gällström, Patrick Carlsson, Anne Henry, Björn Magnusson, J. Niklas and Erik Janzén
  Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material
  Materials Science Forum Vols. 600-603, 2009.


 Web of Science® Times Cited: 2

Patrick Carlsson, Son Tien Nguyen, Björn Magnusson and Erik Janzén
  Intrinsic Defects in HPSI 6H-SiC: an EPR Study
  Materials Science Forum, Vols. 600-603, 2009.


 Web of Science® Times Cited: 2

Son Tien Nguyen, Patrick Carlsson, Andreas Gällström, Björn Magnusson and Erik Janzén
  Deep Levels Responsible for Semi-insulating Behaviour in Vanadium-doped 4H-SiC Substrates
  Materials Science Forum, Vols. 600-603, 2009.


Son Tien Nguyen, Patrick Carlsson, Andreas Gällström, Björn Magnusson and Erik Janzén
  Prominent defects in semi-insulating SiC substrates
  Physica B, Vol. 401-402, 2007.


 Web of Science® Times Cited: 9

Son Tien Nguyen, Patrick Carlsson, Björn Magnusson and Erik Janzén
  Intrinsic Defects in Semi-Insulating SiC: Deep Levels and their Roles in Carrier Compensation
  Materials Science Forum, Vols. 556-557, 2007.


 Web of Science® Times Cited: 3

Andreas Gällström, Björn Magnusson, Patrick Carlsson, Son Tien Nguyen, Anne Henry, Franziska Beyer, Mikael Syväjärvi, Rositsa Yakimova and Erik Janzén
  Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC
  Materials Science Forum, vol. 556-557, 2007.


 Web of Science® Times Cited: 4

Erik Janzén, Tien Son Nguyen, Björn Magnusson and A Ellison
  Intrinsic defects in high-purity SiC
  Microelectronic Engineering, Vol. 83, 2006.


 Web of Science® Times Cited: 12

Tien Son Nguyen, T Umeda, J Isoya, Adam Gali, M Bockstedte, Björn Magnusson, A Ellison, N Morishita, T Ohshima, H Itoh and Erik Janzén
  Identification of divacancies in 4H-SiC
  Physica B: Condensed Matter, Vols. 376-377, 2006.


 Web of Science® Times Cited: 2

R. Aavikko, K. Saarinen, Björn Magnusson and Erik Janzén
  Clustering of Vacancies in Semi-Insulating SiC Observed with Positron Spectroscopy
  Materials Science Forum, Vols. 527-529, 2006.


Son Tien Nguyen, Patrick Carlsson, Björn Magnusson and Erik Janzén
  Characterization of semi-insulating SiC
  Mater. Res. Soc. Symp. Proc. 911, 2006.


Son Tien Nguyen, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, Björn Magnusson, A. Ellison, N. Morishita, T. Ohshima, H. Itoh and Erik Janzén
  Divacancy model for P6/P7 centers in 4H- and 6H-SiC
  Materials Science Forum, Vols. 527-529, 2006.


A. Thuaire, Anne Henry, Björn Magnusson, Peder Bergman, Weimin Chen, Erik Janzén, M. Mermoux and E. Bano
  Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques
  Materials Science Forum, Vols. 527-529, 2006.


 Web of Science® Times Cited: 1

Björn Magnusson, R. Aavikko, K. Saarinen, Son Tien Nguyen and Erik Janzén
  Optical Studies of Deep Centers in Semi-Insulating SiC
  Materials Science Forum, Vols. 527-529, 2006.


R Aavikko, K Saarinen, Björn Magnusson and Erik Janzén
  Observation of vacancy clusters in HTCVD grown SiC
  Materials Science Forum, Vols. 483-485, 2005.


 Web of Science® Times Cited: 2

Liutauras Storasta, R Aleksiejunas, M Sudzius, A Kadys, T Malinauskas, K Jarasiunas, Björn Magnusson and Erik Janzén
  Nonequilibrium carrier diffusion and recombination in heavily-doped and semi-insulating bulk HTCVD grown 4H-SiC crystals
  Materials Science Forum, Vols. 483-485, 2005.


 Web of Science® Times Cited: 2

Björn Magnusson and Erik Janzén
  Optical Characterization of Deep Level Defects in SiC
  Materials Science Forum, Vols. 483-485, 2005.


 Web of Science® Times Cited: 27

A Ellison, Björn Magnusson, B Sundqvist, Galia Pozina, Peder Bergman, Erik Janzén and A Vehanen
  SiC crystal growth by HTCVD
  Materials Science Forum, Vols. 457-460, 2004.


 Web of Science® Times Cited: 40

Z. Zolnai, Son Tien Nguyen, Björn Magnusson, Christer Hallin and Erik Janzén
  Annealing behaviour of vacancy- and antisite-related defects in electron-irradiated 4H-SiC
  Mater. Sci. Forum, Vol. 457-460, 2004.


 Web of Science® Times Cited: 10

L. Kassamakova-Kolaklieva, Liutauras Storasta, Ivan Gueorguiev Ivanov, Björn Magnusson, S. Contreras, C. Consejo, J. Pernot, M. Zielinski and Erik Janzén
  Temperature-Dependent Hall Effect Measurements in Low - Compensated p-Type 4H-SiC
  Mater. Sci. Forum, Vol. 457-460, 2004.


 Web of Science® Times Cited: 4

Son Tien Nguyen, Björn Magnusson, Z. Zolnai, A. Ellison and Erik Janzén
  Defects in high-purity semi-insulating SiC
  Mater. Sci. Forum, Vol. 457-460, 2004.


 Web of Science® Times Cited: 54

Erik Janzén, Ivan Gueorguiev Ivanov, Son Tien Nguyen, Björn Magnusson, Anne Henry and J. Isoya
  Defects in SiC
  International Seminar on SiC and Related Materials,2004, 2004.


Nguyen Son, Björn Magnusson, Z. Zolnai, A. Ellison and Erik Janzén
  Magnetic Resonance of Large-area Semi-insulating SiC Substrates
  Bulletin of The American Physical Society Meeting, Vol. 48, 2003.


Jens Eriksson, N Rorsman, H Zirath, Anne Henry, Björn Magnusson, A Ellison and Erik Janzén
  A comparison of MESFETs on different 4H-Silicon carbide semi-insulating substrates
  Materials Science Forum Vols. 433-434, 2003.


Liutauras Storasta, Björn Magnusson, Anne Henry, MK Linnarsson, JP Bergman and Erik Janzén
  Correlation between electrical and optical mapping of boron related complexes in 4H-SiC
  Materials Science Forum, Vols. 433-436, 2003.


Matthias Wagner, Ivan Gueorguiev Ivanov, Liutauras Storasta, JP Bergman, Björn Magnusson, Weimin Chen and Erik Janzén
  Photoluminescence up-conversion processes in SiC
  Materials Science Forum, Vols. 433-436, 2003.


Björn Magnusson, JP Bergman and Erik Janzén
  Time-resolved photoluminescence of deep centers in semi-insulating 4H-SiC
  Materials Science Forum, Vols. 433-436, 2003.


Tien Son Nguyen, Björn Magnusson, Z Zolnai, A Ellison and Erik Janzén
  Defects in semi-insulating SiC substrates
  Materials Science Forum, Vols. 433-436, 2003.


A Ellison, Björn Magnusson, Tien Son Nguyen, Liutauras Storasta and Erik Janzén
  HTCVD grown semi-insulating SiC substrates
  Materials Science Forum, Vols. 433-436, 2003.


B Sundqvist, A Ellison, A Jonsson, A Henry, C Hallin, JP Bergman, Björn Magnusson and Erik Janzén
  Growth of high quality p-type 4H-SiC substrates by HTCVD
  Materials Science Forum, Vols. 433-436, 2003.


 Web of Science® Times Cited: 1

Erik Janzén, Ivan Gueorguiev Ivanov, Son Tien Nguyen, Björn Magnusson, Z Zolnai, Anne Henry, Peder Bergman, Liutauras Storasta and Fredrik Carlsson
  Defects in SiC
  Physica B: Condensed Matter, Vols. 340-342, 2003.


 Web of Science® Times Cited: 14

Anelia Kakanakova-Georgieva, Urban Forsberg, Björn Magnusson, Rositsa Yakimova and Erik Janzén
  Growth of AlN films by hot-wall CVD and sublimation techniques: Effect of growth cell pressure
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 1

Anne Henry, A Ellison, Urban Forsberg, Björn Magnusson, Galia Pozina and Erik Janzén
  Characterization of bulk and epitaxial SiC material using photoluminescence spectroscopy
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 18

Björn Magnusson, A Ellison and Erik Janzén
  Properties of the UD-1 deep-level center in 4H-SiC
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 7

JP Bergman, H Jakobsson, Liutauras Storasta, Fredrik Carlsson, Björn Magnusson, S Sridhara, Galia Pozina, H Lendenmann and Erik Janzén
  Characterisation and defects in silicon carbide
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 31

Matthias Wagner, Björn Magnusson, Weimin Chen and Erik Janzén
  Electronic structure of the UD3 defect in 4H and 6H SiC
  Materials Science Forum, Vols. 389 - 393, 2002.


 Web of Science® Times Cited: 2

Björn Magnusson, A. Ellison, Liutauras Storasta and Erik Janzén
  Infrared absorption and annealing behavior of semi-insulating 4H SiC HTCVD substrates
  <em>Proc. of the MRS Spring Meeting (2001), Vol. <em>680E</em></em>, 2001.


Björn Magnusson, A. Ellison, Son Tien Nguyen and Erik Janzén
  Deep-level luminescence at 1.0 eV in 6H SiC
  Mat. Res. Soc. Symp. Proc., Vol. 640, 2001.


A. Ellison, Björn Magnusson, Carl Hemmingsson, W. Magnusson, Tihomir Iakimov, Liutauras Storasta, Anne Henry, N. Henelius and Erik Janzén
  HTCVD Growth of Semi-Insulating 4H-SiC Crystals With Low Defect Density
  Mat. Res. Soc. Symp. Proc., Vol. 640, 2001.


Fredrik Carlsson, Liutauras Storasta, Björn Magnusson, Peder Bergman, K Skold and Erik Janzén
  Neutron irradiation of 4H SiC
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 5

Anne Henry, Björn Magnusson, MK Linnarsson, A Ellison, Mikael Syväjärvi, Rositsa Yakimova and Erik Janzén
  Presence of hydrogen in SiC
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 8

Björn Magnusson, A Ellison, Fredrik Carlsson, Tien Son Nguyen and Erik Janzén
  As-grown and process-induced intrinsic deep-level luminescence in 4H SiC
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 4

Erik Janzén, Anne Henry, Peder Bergman, A. Ellison and Björn Magnusson
  Material characterization need for SiC-based devices
  Sci. Eng. B, Vol. 4, 2001.


 Web of Science® Times Cited: 31

Peder Bergman, Liutauras Storasta, Fredrik Carlsson, S. Sridhara, Björn Magnusson and Erik Janzén
  Defects in 4H silicon carbide
  Physica B, Vols. 308-310, 2001.


 Web of Science® Times Cited: 9

Björn Magnusson, Matthias Wagner, Tien Son Nguyen and Erik Janzén
  Vanadium-related center in 4H silicon carbide
  Materials Science Forum, Vols. 338-343, 2000.


 Web of Science® Times Cited: 1

Matthias Wagner, Björn Magnusson, E. Sörman, Christer Hallin, J. L. Lindström, Weimin Chen and Erik Janzén
  Zeeman spectroscopy of the neutral silicon vacancy in 6H and 4H SiC
  Physica B. Vol. 273-274, 1999.