Publications for Anne Henry
Co-author map based on ISI articles 2007-
Publications mentioned in social media 4 times*
Journal Articles
Stefano Leone, Anne Henry, Erik Janzén and S. Nishizawa
Epitaxial growth of SiC with chlorinated precursors on different off-angle substrates
Journal of Crystal Growth, 2013, 362, 170-173.
Web of Science® Times Cited: 1 |
Mikhail Chubarov, Henrik Pedersen, Hans Högberg and Anne Henry
¨ of sp(2) hybridized boron nitride thin films
CrysteEngComm, 2013, 15(3), 455-458.
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N Thierry-Jebali, Jawad ul-Hassan, M Lazar, D Planson, E Bano, Anne Henry, Erik Janzén and P Brosselard
Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodes
Applied Physics Letters, 2012, 101(22), 222111.
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J H Choi, L Latu-Romain, E Bano, Anne Henry, W J Lee, T Chevolleau and T Baron
Comparative study on dry etching of alpha- and beta-SiC nano-pillars
Materials letters (General ed.), 2012, 87, 9-12.
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Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, J Isoya, N Morishita, T Ohshima and Erik Janzén
Capacitance transient study of a bistable deep level in e(-)-irradiated n-type 4H-SiC
Journal of Physics D, 2012, 45(45), .
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I J van Rooyen, J H Neethling, Anne Henry, Erik Janzén, S M Mokoduwe, A Janse van Vuuren and E Olivier
Effects of phosphorous-doping and high temperature annealing on CVD grown 3C-SiC
Nuclear Engineering and Design, 2012, 251(SI), 191-202.
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Henrik Pedersen, Carina Höglund, Jens Birch, Jens Jensen and Anne Henry
Low Temperature CVD of Thin, Amorphous Boron-Carbon Films for Neutron Detectors
Chemical Vapor Deposition, 2012, 18(7-9), 221-224.
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Henrik Pedersen, Stefano Leone, Olle Kordina, Anne Henry, Shin-ichi Nishizawa, Yaroslav Koshka and Erik Janzén
Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications
Chemical Reviews, 2012, 112(4), 2434-2453.
Web of Science® Times Cited: 4 |
J A A Engelbrecht, I J van Rooyen, Anne Henry, Erik Janzén and E J Olivier
The origin of a peak in the reststrahlen region of SiC
Physica. B, Condensed matter, 2012, 407(10), 1525-1528.
Web of Science® Times Cited: 2 |
Andreas Gällström, Björn Magnusson, Franziska Beyer, Adam Gali, Nguyen Son Tien, Stefano Leone, Ivan Gueorguiev Ivanov, Carl Hemmingsson, Anne Henry and Erik Janzén
Optical identification and electronic configuration of tungsten in 4H-and 6H-SiC
Physica. B, Condensed matter, 2012, 407(10), 1462-1466.
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Anne Henry, Stefano Leone, Franziska Beyer, Henrik Pedersen, Olle Kordina, Sven Andersson and Erik Janzén
SiC epitaxy growth using chloride-based CVD
Physica. B, Condensed matter, 2012, 407(10), 1467-1471.
Fulltext Web of Science® Times Cited: 1 |
I J van Rooyen, J A A Engelbrecht, Anne Henry, Erik Janzén, J H Neethling and P M van Rooyen
The effect of grain size and phosphorous-doping of polycrystalline 3C-SiC on infrared reflectance spectra
Journal of Nuclear Materials, 2012, 422(1-3), 103-108.
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Mikhail Chubarov, Henrik Pedersen, Hans Högberg, Jens Jensen and Anne Henry
Growth of High Quality Epitaxial Rhombohedral Boron Nitride
Crystal Growth & Design, 2012, 12(6), 3215-3220.
Web of Science® Times Cited: 1 |
Henrik Pedersen, Mikhail Chubarov, Hans Högberg, Jens Jensen and Anne Henry
On the effect of water and oxygen in chemical vapor deposition of boron nitride
Thin Solid Films, 2012, 520(18), 5889-5893.
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Stefano Leone, Olle Kordina, Anne Henry, Shin-ichi Nishizawa, Örjan Danielsson and Erik Janzén
Gas-Phase Modeling of Chlorine-Based Chemical Vapor Deposition of Silicon Carbide
Crystal Growth & Design, 2012, 12(4), 1977-1984.
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Mihails Cubarovs, Henrik Pedersen, Hans Högberg, Vanya Darakchieva, Jensen Jens, Per Persson and Anne Henry
CVD growth of sp2-hybridized boron nitride using aluminum nitride as buffer layer
Physica Status Solidi. Rapid Research Letters, 2011, 5(10-11), 397-399.
Fulltext Web of Science® Times Cited: 3 |
Franziska Beyer, Carl Hemmingsson, Stefano Leone, Y.-C. Lin, Henrik Gällström, Anne Henry and Erik Janzén
Deep levels in iron doped n- and p-type 4H-SiC
Journal of Applied Physics, 2011, 110, 123701-1-123701-5.
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Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, Erik Janzén, J. Isoya, N. Morishita and T. Ohshima
Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n-type 4H-SiC
Journal of Applied Physics, 2011, 109(10), 103703.
Fulltext Web of Science® Times Cited: 1 |
Christer M Andersson, Niclas Ejebjörk, Anne Henry, Sven Andersson, Erik Janzén, Herbert Zirath and Niklas Rorsman
A SiC Varactor With Large Effective Tuning Range for Microwave Power Applications
IEEE ELECTRON DEVICE LETTERS, 2011, 32(6), 788-790.
Fulltext Web of Science® Times Cited: 3 |
Franziska Beyer, Carl Hemmingsson, Andreas Gällström, Stefano Leone, Henrik Pedersen, Anne Henry and Erik Janzén
Deep levels in tungsten doped n-type 3C-SiC
Applied Physics Letters, 2011, 98(15), 152104.
Fulltext Web of Science® Times Cited: 7 |
Patrik Scajev, Jawad Hassan, Kestutis Jarasiunas, Masashi Kato, Anne Henry and J Peder Bergman
Comparative Studies of Carrier Dynamics in 3C-SiC Layers Grown on Si and 4H-SiC Substrates
JOURNAL OF ELECTRONIC MATERIALS, 2011, 40(4), 394-399.
Web of Science® Times Cited: 6 |
D. Dochev, V. Desmaris, A. Pavolotsky, D. Meledin, Z. Lai, Anne Henry, Erik Janzén, E. Pippel, J. Woltersdorf and V. Belitsky
Growth and characterization of epitaxial ultra-thin NbN films on 3C-SiC/Si substrate for terahertz applications
Superconductors Science and Technology, 2011, 24(3), 035016.
Web of Science® Times Cited: 1 |
Stefano Leone, Franziska Beyer, Henrik Pedersen, Sven Andersson, Olle Kordina, Anne Henry and Erik Janzén
Chlorinated precursor study in low temperature CVD of 4H-SiC
Thin Solid Films, 2011, 519(10), 3074-3080.
Web of Science® Times Cited: 6 |
Stefano Leone, Franziska Beyer, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén
Growth of smooth 4H-SiC epilayers on 4° off-axis substrates with chloride-based CVD at very high growth rate
Materials research bulletin, 2011, 46(8), 1272-1275.
Web of Science® Times Cited: 5 |
Nguyen Tien Son, J. Isoya, T Umeda, Ivan Gueorguiev Ivanov, Anne Henry, T. Ohshima and Erik Janzén
EPR and ENDOR Studies of Shallow Donors in SiC
Applied Magnetic Resonance, 2010, 39(1-2), 49-85.
Web of Science® Times Cited: 2 |
Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, J Isoya, N Morishita, T Ohshima and Erik Janzén
Bistable defects in low-energy electron irradiated n-type 4H-SiC
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2010, 4(8-9), 227-229.
Web of Science® Times Cited: 3 |
Ivan Gueorguiev Ivanov, Anne Henry, Fei Yan, W J Choyke and Erik Janzén
Ionization energy of the phosphorus donor in 3C-SiC from the donor-acceptor pair emission
JOURNAL OF APPLIED PHYSICS, 2010, 108(6), 063532.
Fulltext Web of Science® Times Cited: 4 |
Stefano Leone, Anne Henry, Sven Andersson, Olle Kordina and Erik Janzén
Optimization of a Concentrated Chloride-Based CVD Process for 4H–SiC Epilayers
Journal of the Electrochemical Society, 2010, 157(10), H969-H979.
Web of Science® Times Cited: 6 |
Nargis Bano, I Hussain, Omer Nour, Magnus Willander, Qamar Ul Wahab, Anne Henry, H S Kwack and D Le Si Dang
Depth-resolved cathodoluminescence study of zinc oxide nanorods catalytically grown on p-type 4H-SiC
Journal of Luminescence, 2010, 130(6), 963-968.
Fulltext Web of Science® Times Cited: 9 |
Jawad ul-Hassan, Anne Henry, P. J. McNally and J. Peder Bergman
Characterization of the Carrot Defect in 4H-SiC Epitaxial Layers
Journal of Crystal Growth, 2010, 313, 1828-1837.
Web of Science® Times Cited: 7 |
Stefano Leone, Franziska Beyer, Anne Henry, Carl Hemmingsson, Olle Kordina and Erik Janzén
Chloride-Based SiC Epitaxial Growth toward Low Temperature Bulk Growth
Crystal Growth & Design, 2010, 10(8), 3743-3751.
Web of Science® Times Cited: 7 |
Stefano Leone, Franziska Beyer, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén
High growth rate of 4H-SiC epilayers grown on on-axis substrates with different chlorinated precursors
Crystal Growth & Design, 2010, 10(12), 5334-5340.
Web of Science® Times Cited: 8 |
Stefano Leone, Franziska Beyer, Anne Henry, Olle Kordina and Erik Janzén
Chloride-based CVD of 3C-SiC epitaxial layers on 6H(0001) SiC
Physica Status Solidi (RRL) – Rapid Research Letters, 2010, 4(11), 305-307.
Web of Science® Times Cited: 8 |
Enrico Mastropaolo, Rebecca Cheung, Anne Henry and Erik Janzén
Electrothermal actuation of silicon carbide ring resonators
Journal of Vacuum Science & Technology B, 2009, 27(6), 3109-3114.
Web of Science® Times Cited: 4 |
Stefano Leone, Henrik Pedersen, Anne Henry, Olle Kordina and Erik Janzén
Thick homoepitaxial layers grown on on-axis Si-face 6H- and 4H-SiC substrates with HCl addition
Journal of Crystal Growth, 2009, 312(1), 24-32.
Web of Science® Times Cited: 8 |
Nargis Bano, Zafar Hussain Ibupoto, Omer Nour, Magnus Willander, P Klason and Anne Henry
Study of luminescent centers in ZnO nanorods catalytically grown on 4H-p-SiC
Semiconductor Science and Technology, 2009, 24(12), 125015.
Fulltext Web of Science® Times Cited: 8 |
Anne Henry, Anders Lundskog and Erik Janzén
Large area mapping of the alloy composition of AlxGa1-xN using infrared reflectivity
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2009, 3(5), 145-147.
Web of Science® Times Cited: 2 |
Jawad ul-Hassan, Anne Henry, Ivan Gueorguiev Ivanov and J. Peder Bergman
In-grown stacking faults in 4H-SiC epilayer grown on off-cut substrates
Journal of Applied Physics, 2009, 105(12), 123513.
Web of Science® Times Cited: 14 |
Henrik Pedersen, Franziska Beyer, Anne Henry and Erik Janzén
Acceptor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD
Journal of Crystal Growth, 2009, 311(13), 3364-3370.
Web of Science® Times Cited: 8 |
Henrik Pedersen, Franziska Beyer, Jawad ul-Hassan, Anne Henry and Erik Janzén
Donor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD
Journal of Crystal Growth, 2009, 311(5), 1321-1327.
Web of Science® Times Cited: 9 |
Stefano Leone, Henrik Pedersen, Anne Henry, Olle Kordina and Erik Janzén
Improved morphology for epitaxial growth on 4° off-axis 4H-SiC substrates
Journal of Crystal Growth, 2009, 311(12), 3265-3272.
Web of Science® Times Cited: 17 |
M. Sudow, H.M. Nemati, M. Thorsell, U. Gustavsson, K. Andersson, C. Fager, P.-A. Nilsson, Jawad ul-Hassan, Anne Henry, Erik Janzén, R. Jos and N. Rorsman
SiC varactors for dynamic load modulation of high power amplifiers
IEEE Electron Device Letters, 2008, 29(7), 728-730.
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Jawad ul-Hassan, J. Peder Bergman, Anne Henry and Erik Janzén
On-axis homoepitaxial growth on Si-face 4H–SiC substrates
Journal of Crystal Growth, 2008, 310(20), 4424-4429.
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Jawad ul-Hassan, J. Peder Bergman, Anne Henry and Erik Janzén
In-situ surface preparation of nominally on-axis 4H-SiC substrates
Journal of Crystal Growth, 2008, 310(20), 4430-4437.
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Henrik Pedersen, Stefano Leone, Anne Henry, Vanya Darakchieva, Patrick Carlsson, Andreas Gällström and Erik Janzén
Very high crystalline quality of thick 4H-SiC epilayers grown from methyltrichlorosilane (MTS)
Physica status solidi (RRL) - Rapid Research Letters, 2008, 2(4), 188-190.
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Henrik Pedersen, Stefano Leone, Anne Henry, Anders Lundskog and Erik Janzén
Growth characteristics of chloride-based SiC epitaxial growth
Physica status solidi (RRL) - Rapid Research Letters, 2008, 2(6), 278-280.
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Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Beyer, Vanya Darakchieva and Erik Janzén
Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS)
Journal of Crystal Growth, 2007, 307(2), 334-340.
Web of Science® Times Cited: 47 |
Son Tien Nguyen, Anne Henry, J. Isoya, M. Katagiri, A. Gali and Erik Janzén
Electron paramagnetic resonance and theoretical studies of shallow phosphorous centers in 3C-, 4H-, and 6H-SiC
, 2006, , .
Web of Science® Times Cited: 22 |
S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, Anne Henry, Ivan Gueorguiev Ivanov, Peder Bergman, Bo Monemar, S. Chichibu and T. Onuma
Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC
Journal of Applied Physics, 2006, 99(9), .
Web of Science® Times Cited: 25 |
Anne Henry, Jawad ul-Hassan, Peder Bergman, Christer Hallin and Erik Janzén
Thick Silicon Carbide Homoepitaxial Layers Grown by CVD Techniques
Chemical Vapor Deposition, 2006, 12(8-9), 475-482.
Web of Science® Times Cited: 44 |
Anne Henry, Urban Forsberg, M. K. Linnarsson and Erik Janzén
Determination of nitrogen doping concentration in doped 4H-SiC epilayers by low temperature photoluminescence
Physica Scripta, 2005, 72(2-3), 254-257.
Web of Science® Times Cited: 6 |
Ivan Gueorguiev Ivanov, Anne Henry and Erik Janzén
Ionization energies of phosphorus and nitrogen donors and aluminum acceptors in 4H silicon carbide from the donor-acceptor pair emission
Physical Review B. Condensed Matter and Materials Physics, 2005, 71(24), 241201-241201-4.
Web of Science® Times Cited: 15 |
H. Jacobson, Rositsa Yakimova, P. Raback, Mikael Syväjärvi, Anne Henry, T. Tuomi and Erik Janzén
Lateral enlargement of silicon carbide crystals
Journal of Crystal Growth, 2004, 270(1-2), .
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Liutauras Storasta, J.R. Bergman, Erik Janzén, Anne Henry and J. Lu
Deep levels created by low energy electron Irradiation in 4H-SiC
Journal of Applied Physics, 2004, 96(9), 4909-4915.
Web of Science® Times Cited: 113 |
Urban Forsberg, Örjan Danielsson, Anne Henry, M. K. Linnarsson and Erik Janzén
Aluminum doping of epitaxial Silicon Carbide
Journal of Crystal Growth, 2003, 253(1-4), 340-350.
Web of Science® Times Cited: 40 |
H. Jacobson, Jens Birch, Christer Hallin, Anne Henry, Rositsa Yakimova, T. Tuomi, Erik Janzén and Ulf Lindefelt
Doping-induced strain in N-doped 4H-SiC crystals
Applied Physics Letters, 2003, 82(21), 3689-3691.
Web of Science® Times Cited: 18 |
Anne Henry, U. Forsberg, M.S. Janson and Erik Janzén
The 3838 Å photoluminescence line in 4H-SiC
Journal of Applied Physics, 2003, 94(5), 2901-2906.
Web of Science® Times Cited: 6 |
Urban Forsberg, Örjan Danielsson, Anne Henry, M. K. Linnarsson and Erik Janzén
Nitrogen doping of epitaxial Silicon Carbide
Journal of Crystal Growth, 2002, 236(1-3), 101-112.
Web of Science® Times Cited: 39 |
Örjan Danielsson, Urban Forsberg, Anne Henry and Erik Janzén
Investigation of the temperature profile in a hot-wall SiC chemical vapour deposition reactor
Journal of Crystal Growth, 2002, 235(1-4), 352-364.
Web of Science® Times Cited: 18 |
T. Egilsson, Ivan Gueorguiev Ivanov, Anne Henry and Erik Janzén
Excitation spectra of nitrogen bound excitons in 4H- and 6H-SiC
Journal of Applied Physics, 2002, 91(3), 2028-2032.
Web of Science® Times Cited: 6 |
Anelia Kakanakova-Georgieva, Rositsa Yakimova, Anne Henry, M.K. Linnarsson, Mikael Syväjärvi and Erik Janzén
Cathodoluminescence identification of donor-acceptor related emissions in as-grown 4H-SiC layers
Journal of Applied Physics, 2002, 91(5), 2890-2895.
Web of Science® Times Cited: 17 |
A. Ellison, J. Zhang, Anne Henry and Erik Janzén
Epitaxial growth of SiC in a chimney CVD reactor
Journal of Crystal Growth, 2002, 236(1-3), 225-238.
Web of Science® Times Cited: 28 |
J. Zhang, Urban Forsberg, M. Isacson, A. Ellison, Anne Henry, O. Kordina and Erik Janzén
Growth characteristics of SiC in a hot-wall CVD reactor with rotation
Journal of Crystal Growth, 2002, 241(4), 431-438.
Web of Science® Times Cited: 14 |
J. Zhang, A. Ellison, O. Danielsson, M.K. Linnarsson, Anne Henry and Erik Janzén
Epitaxial growth of 4H SiC in a vertical hot-wall CVD reactor: Comparison between up- and down-flow orientations
Journal of Crystal Growth, 2002, 241(4), 421-430.
Web of Science® Times Cited: 8 |
O. Danielsson, Anne Henry and Erik Janzén
Growth rate predictions of chemical vapor deposited silicon carbide epitaxial layers
Journal of Crystal Growth, 2002, 243(1), 170-184.
Web of Science® Times Cited: 61 |
Ivan Gueorguiev Ivanov, T Egilsson, Anne Henry, Bo Monemar and Erik Janzén
Resonant sharp hot free-exciton luminescence in 6H-and 4H-SiC due to inhibited exciton-phonon interaction
Physical Review B. Condensed Matter and Materials Physics, 2001, 64(8), .
Web of Science® Times Cited: 3 |
Liutauras Storasta, Fredrik Carlsson, S.G. Sridhara, Peder Bergman, Anne Henry, T. Egilsson, A. Hallen and Erik Janzén
Pseudodonor nature of the D1 defect in 4H-SiC
Applied Physics Letters, 2001, 78(1), 46-48.
Web of Science® Times Cited: 64 |
O.P.A. Lindquist, Kenneth Järrendahl, S. Peters, J.T. Zettler, C. Cobet, N. Esser, D.E. Aspnes, Anne Henry and N.V. Edwards
Ordinary and extraordinary dielectric functions of 4H- and 6H-SiC from 3.5 to 9.0 eV
Applied Physics Letters, 2001, 78(18), 2715-2717.
Web of Science® Times Cited: 14 |
Qamar Ul Wahab, A Ellison, Anne Henry, Erik Janzén, Christer Hallin, J Di Persio and R Martinez
Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H-SiC Schottky diodes
Applied Physics Letters, 2000, 76(19), 2725-2727.
Web of Science® Times Cited: 90 |
Tanja Paskova, E.M. Goldys, Rositsa Yakimova, E.B. Svedberg, Anne Henry and Bo Monemar
Influence of growth rate on the structure of thick GaN layers grown by HVPE
Journal of Crystal Growth, 2000, 208(1), 18-26.
Web of Science® Times Cited: 32 |
T. Egilsson, Anne Henry, Ivan Gueorguiev Ivanov, A. Ellison and Erik Janzén
Excitation properties of hydrogen-related photoluminescence in 6H-SiC
Physical Review B. Condensed Matter and Materials Physics, 2000, 62(11), 7162-7168.
Web of Science® Times Cited: 7 |
Mikael Syväjärvi, Rositsa Yakimova, M Tuominen, Anelia Kakanakova-Georgieva, M F Macmillan, Anne Henry, Qamar Ul Wahab and Erik Janzén
Growth of 6H and 4H-SiC by sublimation epitaxy
Journal of Crystal Growth, 1999, 197(1-2), 155-162.
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T Egilsson, Ivan Gueorguiev Ivanov, Anne Henry and Erik Janzén
Zeeman spectroscopy of the D-1 bound exciton in 3C-, and 4H-SiC
Physica. B, Condensed matter, 1999, 274, 677-680.
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Olle Kordina, Christer Hallin, Anne Henry, Peder Bergman, Ivan Gueorguiev Ivanov, A. Ellison, Nguyen Tien Son and Erik Janzén
Growth of SiC by "Hot-Wall" CVD and HTCVD
Physica status solidi. B, Basic research, 1997, 202(1), 321-334.
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Chapters in Books
Erik Janzén, Adam Gali, Anne Henry, Ivan Gueorguiev Ivanov, Björn Magnusson and Son Tien Nguyen
Defects in SiC
Defects in Microelectronic Materials and Devices, Taylor and Francis LLC, 2008, 615.
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T Egilsson, Ivan Gueorguiev Ivanov, Nguyen Tien Son, Anne Henry, Peder Bergman and Erik Janzén
Exciton and defect photoluminescence from SiC
Silicon Carbide, , 2003, 81-120.
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Conference Articles
Xun Li, Jawad ul Hassan, Olof Kordina, Erik Janzén and Anne Henry
Surface preparation of 4° off-axis 4H-SiC substrate for epitaxial growth
Materials Science Forum (Volumes 740 - 742), 2013.
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Siva Kotamraju, Bharat Krishnan, Franziska C. Beyer, Anne Henry, Olle Kordina, Erik Janzén and Yaroslav Koshka
Electrical and optical properties of high-purity epilayers grown by the low-temperature chloro-carbon growth method
Materials Science Forum Vol 717 - 720, 2012.
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Gabriel Civrac, Farah Laariedh, Nicolas Thierry-jebali, Mihai Lazar, Dominique Planson, Pierre Brosselard, Jawad ul Hassan, Anne Henry, Erik Janzén, Bertrand Vergne and Sigo Scharnholz
600 V PiN diodes fabricated using on-axis 4H silicon carbide
Materials Science Forum Vol 717 - 720, 2012.
Web of Science® Times Cited: 1
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Milan Yazdanfar, Stefano Leone, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén
Carrot defect control in chloride-based CVD through optimized ramp up conditions
Materials Science Forum Vols 717 - 720, 2012.
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Stefano Leone, Henrik Pedersen, Franziska Beyer, Sven Andersson, Olle Kordina, Anne Henry, Andrea Canino, Francesco La Via and Erik Janzén
Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles
Materials Science Forum Vols 717 - 720, 2012.
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Xun Li, Stefano Leone, Sven Andersson, Olle Kordina, Anne Henry and Erik Janzén
CVD Heteroepitaxial Growth of 3C-SiC on 4H-SiC (0001) Substrates
Materials Science Forum Vols 717 - 720, 2012.
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Andreas Gällström, Björn Magnusson, Franziska Beyer, Adam Gali, Nguyen Tien Son, Stefano Leone, Ivan G. Ivanov, Anne Henry, Carl Hemmingsson and Erik Janzén
Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC
Materials Science Forum Vols 717 - 720, 2012.
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Anne Henry, Xun Li, Stefano Leone, Olof Kordina and Erik Janzén
CVD growth of 3C-SiC on 4H-SiC substrate
Materials Science Forum Vol 711, 2012.
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Sadia Muniza Faraz, Muhammed Naveed Alvi, Anne Henry, Omer Nur, Magnus Willander and Qamar Ul Wahab
Annealing Effects on Electrical and Optical Properties of N-ZnO/P-Si Heterojunction Diodes
<em>Advanced Materials Research Vol. 324 (2011) pp 233-236</em>, 2011.
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Jawad ul-Hassan, Peder Bergman, Anne Henry and Erik Janzén
High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC
Materials Science Forum (Volumes 679 - 680), p115-118, 2011.
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Ivan Ivanov, Anne Henry, Fei Yan, Wolfgang J. Choyke and Erik Janzén
Donor-Acceptor Pair Luminescence of P-Al and N-Al Pairs in 3C-SiC and the Ionization Energy of the P Donor
<em>Materials Science Forum Vols. 679-680 (2011) pp 245-248</em>, 2011.
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Teddy Robert, Maya Marinova, Sandrine Juillaguet, Anne Henry, Efstathios K. Polychroniadis and Jean Camassel
Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers
<em>Materials Science Forum Vols. 679-680 (2011) pp 314-317</em>, 2011.
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Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, Junichi Isoya, Norio Morishita, Takeshi Ohshima and Erik Janzén
Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC
<em>Materials Science Forum Vols. 679-680 (2011) pp 249-252</em>, 2011.
Web of Science® Times Cited: 1
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Stefano Leone, Yuan-Chih Lin, Franziska C. Beyer, Sven Andersson, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén
Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates
<em>Materials Science Forum Vols. 679-680 (2011) pp 59-62</em>, 2011.
Web of Science® Times Cited: 4
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Anne Henry, Stefano Leone, Franziska C. Beyer, Sven Andersson, Olle Kordina and Erik Janzén
Chloride based CVD of 3C-SiC on (0001) α-SiC substrates
<em>Materials Science Forum Vols. 679-680 (2011) pp 75-78</em>, 2011.
Web of Science® Times Cited: 1 Fulltext
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Stefano Leone, Franziska Beyer, Anne Henry, Olle Kordina and Erik Janzén
Chloride-based CVD of 3C-SiC Epitaxial Layers on On-axis 6H (0001) SiC Substrates
AIP Conference Proceedings, Vol. 1292, 2010.
Web of Science® Times Cited: 1
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T. Robert, M. Marinova, S. Juillaguet, Anne Henry, E.K. Polychroniadis and J. Camassel
6H-type zigzag faults in low-doped 4H-SiC epitaxial layers.
Mat. Sci. Forum, Vols. 645-648, 2010.
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Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, J. Isoya, N. Morishita, T. Ohshima and Erik Janzén
Defects in low-energy electron-irradiated n-type 4H-SiC
Physica Scripta, vol. T141, 2010.
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Jawad ul-Hassan, Peder Bergman, Justinas Palisaitis, Anne Henry, P.J. McNally, S. Anderson and Erik Janzén
Growth and properties of SiC on-axis homoepitaxial layers
ICSCRM 2009, 2010.
Web of Science® Times Cited: 3
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Anne Henry, Steffano Leone, S. Andersson, Olle Kordina and Erik Janzén
Concentrated chloride-based epitaxial growth of 4H-SiC
Materials Science Forum, Vols. 645-648, 2010.
Web of Science® Times Cited: 2 Fulltext
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Stefano Leone, Anne Henry, Olle Kordina and Erik Janzén
Chloride-based CVD at high growth rates on 3 vicinal off-angles SiC wafers
ICSCRM2009, 2010.
Web of Science® Times Cited: 1
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Jawad ul-Hassan, Anne Henry and Peder Bergman
Optical and Structural Properties of In-grown Stacking Faults in 4H-SiC Epilayers
ICSCRM2009, 2010.
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Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, Junichi Isoya, Norio Morishita, Takeshi Ohshima and Erik Janzén
Metastable defects in low-energy electron irradiated n-type 4H-SiC
Materials Science Forum, Vols. 645-648, 2010.
Web of Science® Times Cited: 1 Fulltext
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Franziska Beyer, Stefano Leone, Carl Hemmingsson, Anne Henry and Erik Janzén
Deep levels in hetero-epitaxial as-grown 3C-SiC
AIP Conference Proceedings, Vol. 1292, 2010.
Web of Science® Times Cited: 1
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Anne Henry, Anders Lundskog, Justinas Palisaitis, Ivan Ivanov, Anelia Kakanakova-Georgieva, Urban Forsberg, Per Persson and Erik Janzén
AlGaN Multiple Quantum Wells and AlN Grown in a Hot-wall MOCVD for Deep UV Applications
ECS Transactions, Vol. 25, Iss. 8, 2009.
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Jawad ul-Hassan, Peder Bergman, Anne Henry, P. Brosselard, P. Godignon and Erik Janzén
On-axis Homoepitaxy on Full 2- 4H-SiC Wafer for High Power Applications
Materials Science Forum Vols. 615-617, 2009.
Web of Science® Times Cited: 2
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Franziska Beyer, Henrik Pedersen, Anne Henry and Erik Janzén
Defects in 4H-SiC Layers Grown by Chloride-based Epitaxy
Materials Science Forum Vols. 615-617, 2009.
Web of Science® Times Cited: 2
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Anne Henry, Erik Janzén, E. Mastropaolo and R. Cheung
Single Crystal and Polycrystalline 3C-SiC for MEMS Applications
Materials Science Forum Vols. 615-617, 2009.
Web of Science® Times Cited: 1
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Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Beyer, Anders Lundskog and Erik Janzén
Chloride-based SiC epitaxial growth
Materials Science Forum Vols. 615-617, 2009.
Web of Science® Times Cited: 1
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Ivan Gueorguiev Ivanov, Jawad ul-Hassan, Anne Henry and Erik Janzén
Temperature Dependence and Selective Excitation of the Phosphorus Related Photoluminescence in 4H-SiC
Materials Science Forum, Vols. 615-617, 2009.
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Andreas Gällström, Björn Magnusson, A. Thuaire, Anne Henry, Plamen Paskov and Erik Janzén
The Electronic Structure of the UD-4 defect in 4H, 6H and 15R SiC
Materials Science Forum, Vols. 600-603, 2009.
Web of Science® Times Cited: 1
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Anne Henry, Peder Bergman and Erik Janzén
Titanium Related Luminescence in SiC
ICSCRM2007,2007, 2009.
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Ivan Gueorguiev Ivanov, C. Persson, Anne Henry and Erik Janzén
Wave-Function Symmetry and the Properties of Shallow P Donors in 4H SiC
Materials Science Forum, Vols. 600-603, 2009.
Web of Science® Times Cited: 2
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P. Brosselard, Anne Henry, A. Pérez-Tomás, J. Montserrat, Erik Janzén and P. Godignon
Bipolar Diode on 4H-SiC P+-Substrate
Materials Science Forum, Vols. 600-603, 2009.
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S. Hahn, Franziska Beyer, Andreas Gällström, Patrick Carlsson, Anne Henry, Björn Magnusson, J. Niklas and Erik Janzén
Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material
Materials Science Forum Vols. 600-603, 2009.
Web of Science® Times Cited: 2
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M. Mikelsen, U. Grossner, J. Bleka, E. Monakhov, B. Svensson, Rositsa Yakimova, Anne Henry, Erik Janzén and A. Lebedev
Carrier Removal in Electron Irradiated 4H and 6H SiC
Materials Science Forum, Vols. 600-603, 2009.
Web of Science® Times Cited: 3
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Enrico Mastropaolo, Rebecca Cheung, Anne Henry and Erik Janzén
Fabrication of beam resonators from hot-wall chemical vapour deposited SiC
Microelectronic Engineering, Vol. 86, 2009.
Web of Science® Times Cited: 6
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Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Beyer, Vanya Darakchieva and Erik Janzén
Very high growth rate of 4H-SiC using MTS as chloride-based precursor
Materials Science Forum, Vol. 600-603, 2009.
Web of Science® Times Cited: 3
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Anne Henry, Stefano Leone, Henrik Pedersen, Olle Kordina and Erik Janzén
Growth of 4H-SiC Epitaxial Layers on 4° Off-axis Si-face substrates
Materials Science Forum, Vols. 615-617, 2009.
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Stefano Leone, Henrik Pedersen, Anne Henry, S. Rao, Olle Kordina and Erik Janzén
Growth of Thick 4H-SiC Epitaxial Layers on On-axis Si-Face Substrates with HCl Addition
Materials Science Forum, Vols. 615-617, 2009.
Web of Science® Times Cited: 6
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Stefano Leone, Henrik Pedersen, Anne Henry, Olle Kordina and Erik Janzén
Homoepitaxial Growth of 4H-SiC on On-Axis Si-face Substrates using MTS as Chlorinated Precursors at High Growth Rate
Materials Science Forum, Vols. 600-603, 2009.
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Stefano Leone, Henrik Pedersen, Anne Henry, Olle Kordina and Erik Janzén
Homoepitaxial growth of 4H-SiC on on-axis Si-face substrates using chloride-based CVD
Materials Science Forum, Vols. 600-603, 2009.
Web of Science® Times Cited: 17
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Peder Bergman, Jawad ul-Hassan, Anne Henry, P. Godignon, P. Brosselard and Erik Janzén
Improved SiC Epitaxial Material for Bipolar Applications
Proc. of MRS Spring Meeting 2008, 2008.
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Y. Shishkin, S.P. Rao, O. Kordina, I. Agafonov, A.A. Maltsev, Jawad ul-Hassan, Anne Henry, C. Moisson and S.E. Saddow
CVD of 6H-SiC on Non-Basal Quasi Polar Faces
ECSCRM 2006,2006, 2007.
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Henrik Pedersen, Stefano Leone, Anne Henry, Vanya Darakchieva and Erik Janzén
Very high epitaxial growth rate of SiC using MTS as chloride-based precursor
Surface and Coatings Technology, Volume 201, Issue 22-23 SPEC. ISS., 2007.
Web of Science® Times Cited: 6
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Henrik Pedersen, Anne Henry, Jawad ul-Hassan, Peder Bergman and Erik Janzén
Growth and Photoluminescence study of Aluminium doped SiC epitaxial layers
Materials Science Forum, Vols. 556-557, 2007.
Web of Science® Times Cited: 1
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Anne Henry, Jawad ul-Hassan, Henrik Pedersen, Franziska Beyer, Peder Bergman, Sven Andersson, Erik Janzén and P. Godignon
Thick epilayers for power devices
Materials Science Forum, vol. 556-557, 2007.
Web of Science® Times Cited: 7
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Jawad ul-Hassan, Peder Bergman, Anne Henry, Henrik Pedersen, P. J. McNally and Erik Janzén
4H-SiC Epitaxial Layers Grown on on-axis Si-face Substrate
Materials Science Forum, Vols. 556-557, 2007.
Web of Science® Times Cited: 8
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Andreas Gällström, Björn Magnusson, Patrick Carlsson, Son Tien Nguyen, Anne Henry, Franziska Beyer, Mikael Syväjärvi, Rositsa Yakimova and Erik Janzén
Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC
Materials Science Forum, vol. 556-557, 2007.
Web of Science® Times Cited: 4
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Jawad ul-Hassan, Anne Henry, Peder Bergman and Erik Janzén
Epitaxial growth of thin 4H-SiC layers with uniform doping depth profile
Thin Solid Films, Vol. 515, 2006.
Web of Science® Times Cited: 3
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J Isoya, M Katagiri, T Umeda, S Koizumi, H Kanda, Tien Son Nguyen, Anne Henry, Adam Gali and Erik Janzén
Pulsed EPR studies of phosphorus shallow donors in diamond and SiC
Physica B, Vols. 376-377, 2006.
Web of Science® Times Cited: 6
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Anne Henry and Erik Janzén
Phosphorus-related luminescence in SiC
Physica Scripta, Vol. T126, 2006.
Web of Science® Times Cited: 4
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M. Mikelsen, E.V. Monakhov, J.H. Bleka, Rositsa Yakimova, Anne Henry, Erik Janzén, Alexander Lebedev and B.G. Svensson
Irradiation Induced Carrier Loss in 4H and 6H SiC
Materials Science Forum, Vols. 556-557, 2006.
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Anne Henry and Erik Janzén
Photoluminescence of Phosphorus doped SiC
Materials Science Forum, Vols. 527-529, 2006.
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Ivan Gueorguiev Ivanov, Anne Henry and Erik Janzén
Donor-acceptor Pair Luminescence of Phosphorus-Aluminum and Nitrogen-Aluminum Pairs in 4H SiC
Materials Science forum, Vols. 527-529, 2006.
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J. Isoya, M. Katagiri, T. Umeda, Son Tien Nguyen, Anne Henry, A. Gali, N. Morishita, T. Ohshima, H. Itoh and Erik Janzén
Shallow P donors in 3C-, 4H- and 6H-SiC
Materials Science Forum, Vols. 527-529, 2006.
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A. Thuaire, Anne Henry, Björn Magnusson, Peder Bergman, Weimin Chen, Erik Janzén, M. Mermoux and E. Bano
Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques
Materials Science Forum, Vols. 527-529, 2006.
Web of Science® Times Cited: 1
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Anne Henry and Erik Janzén
Titanium related luminescence in SiC
Superlattices and Microstructures, Volume 40, Issues 4-6, E-MRS 2006 Symposium S: Material Science and Technology of Wide Bandgap Semiconductors, 2006 Spring Meeting of the European Materials Research Society, 2006.
Web of Science® Times Cited: 1
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Erik Janzén, Anne Henry and Son Tien Nguyen
Material aspects on SiC
International Workshop Nanohard 2005, 2005.
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Son Tien Nguyen, Anne Henry, J. Isoya and Erik Janzén
Electron Paramagnetic Resonance of Shallow Phosphorous Centers in 4H- and 6H-SiC
Materials Science Forum, Vols. 483-485, 2005.
Web of Science® Times Cited: 4
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Anne Henry and Erik Janzén
Epitaxial Growth and Characterisation of Phosphorus Doped SiC Using TBP as Precursor.
Materials Science Forum, Vols. 483-485, 2005.
Web of Science® Times Cited: 11
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Erik Janzén, Peder Bergman, Örjan Danielsson, Urban Forsberg, Christer Hallin, Jawad ul-Hassan, Anne Henry, Ivan Gueorguiev Ivanov, Anelia Kakanakova-Gueorguie, Per Persson and Qamar Ul Wahab
SiC and III-nitride Growth in a Hot-wall CVD Reactor
Materials Science Forum, ISSN 0255-5476, volume 483-485, 2005.
Web of Science® Times Cited: 5
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S.M. Bishop, E.A. Preble, Christer Hallin, Anne Henry, W. Sarney, H.-R. Chang, Liutauras Storasta, Henrik Jacobson, Z.J. Reitmeier, B.P. Wagner, Erik Janzén and R.F. Davis
Characterization and comparison of 4H-SiC(112 over-bar 0) and 4H-SiC(0001) 8° off-axis substrates and homoepitaxial films
Materials Research Society Symposium Proceedings, Vol. 815 Silicon Carbide 2004 - Materials, Processing and Devices,2004, 2004.
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S.M. Bishop, E.A. Preble, Christer Hallin, Anne Henry, Liutauras Storasta, Henrik Jacobson, B.P. Wagner, Z.J. Reitmeier, Erik Janzén and R.F. Davis
Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization
Materials Science Forum, Vols. 457-460, 2004.
Web of Science® Times Cited: 2
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Liutauras Storasta, Anne Henry, Peder Bergman and Erik Janzén
Investigations of possible nitrogen participation in the Z1/Z2 defect in 4H-SiC
Mater. Sci. Forum, Vol. 457-460, 2004.
Web of Science® Times Cited: 15
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Anne Henry, M.S. Janson and Erik Janzén
Properties of the bound excitons associated to the 3838Å line in 4H-SiC and the 4182Å line in 6H-SiC
Mater. Sci. Forum, Vol. 457-460, 2004.
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Erik Janzén, Ivan Gueorguiev Ivanov, Son Tien Nguyen, Björn Magnusson, Anne Henry and J. Isoya
Defects in SiC
International Seminar on SiC and Related Materials,2004, 2004.
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Jens Eriksson, N Rorsman, H Zirath, Anne Henry, Björn Magnusson, A Ellison and Erik Janzén
A comparison of MESFETs on different 4H-Silicon carbide semi-insulating substrates
Materials Science Forum Vols. 433-434, 2003.
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Liutauras Storasta, Björn Magnusson, Anne Henry, MK Linnarsson, JP Bergman and Erik Janzén
Correlation between electrical and optical mapping of boron related complexes in 4H-SiC
Materials Science Forum, Vols. 433-436, 2003.
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OPA Lindquist, Hans Arwin, Anne Henry and Kenneth Järrendahl
Infrared optical properties of 3C, 4H and 6H silicon carbide
Materials Science Forum, Vols. 433-436, 2003.
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H Jacobson, Jens Birch, Ulf Lindefelt, Christer Hallin, Anne Henry, Rositsa Yakimova and Erik Janzén
Doping-related strain in n-doped 4H-SiC crystals
Materials Science Forum, Vols. 433-436, 2003.
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HJ Chung, JQ Liu, Anne Henry and M Skowronski
Stacking fault formation in highly doped 4H-SiC epilayers during annealing
ECSCRM2002, 2003.
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Anne Henry, Liutauras Storasta and Erik Janzén
Nitrogen delta doping in 4H-SiC epilayers
Materials Science Forum, Vols. 433-436, 2003.
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Anne Henry, M.S. Janson and Erik Janzén
Boron-related luminescence in SiC
, 2003.
Web of Science® Times Cited: 3
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Erik Janzén, Ivan Gueorguiev Ivanov, Son Tien Nguyen, Björn Magnusson, Z Zolnai, Anne Henry, Peder Bergman, Liutauras Storasta and Fredrik Carlsson
Defects in SiC
Physica B: Condensed Matter, Vols. 340-342, 2003.
Web of Science® Times Cited: 14
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S Nakagomi, H Shinobu, Lars Unéus, Ingemar Lundström, Lars-Gunnar Ekedahl, Rositsa Yakimova, Mikael Syväjärvi, Anne Henry, Erik Janzén and Anita Lloyd-Spets
Influence of epitaxial layer on SiC Schottky diode gas sensors operated under high-temperature conditions
Materials Science Forum, Vols. 389-393, 2002.
Web of Science® Times Cited: 1
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Lars Unéus, S Nakagomi, M Linnarsson, Mona Jensen, BG Svensson, Rositsa Yakimova, Mikael Syväjärvi, Anne Henry, Erik Janzén, Lars-Gunnar Ekedahl, I Lunstrom and Anita Lloyd-Spets
The effect of hydrogen diffusion in p- and n-type SiC Schottky diodes at high temperatures
Materials Science Forum, Vols. 389-393, 2002.
Web of Science® Times Cited: 5
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U Zimmermann, J Osterman, J Zhang, Anne Henry and A Hallen
Electrical characterization of high-voltage 4H-SiC diodes on high-temperature CVD-grown epitaxial layers
Materials Science Forum, Vols. 389-393, 2002.
Web of Science® Times Cited: 4
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A Syrkin, V Dmitriev, Rositsa Yakimova, Anne Henry and Erik Janzén
Power Schottky and p-n diodes on SiC epi-wafers with reduced micropipe density
Materials Science Forum, Vols. 389-393, 2002.
Web of Science® Times Cited: 5
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Anne Henry, A Ellison, Urban Forsberg, Björn Magnusson, Galia Pozina and Erik Janzén
Characterization of bulk and epitaxial SiC material using photoluminescence spectroscopy
Materials Science Forum, Vols. 389-393, 2002.
Web of Science® Times Cited: 18
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O Danielsson, S Jonsson, Anne Henry and Erik Janzén
Predicting growth rates of SiC epitaxial layers grown by hot-wall chemical vapor deposition
Materials Science Forum, Vols. 389-393, 2002.
Web of Science® Times Cited: 2
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Urban Forsberg, O Danielsson, Anne Henry, MK Linnarsson and Erik Janzén
Aluminum doping of epitaxial silicon carbide grown by hot-wall CVD, Effect of process parameters
Materials Science Forum, Vols. 389-393, 2002.
Web of Science® Times Cited: 8
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J Zhang, Urban Forsberg, M Isacson, A Ellison, Anne Henry, Olle Kordina and Erik Janzén
Growth characteristics of SiC in a hot-wall CVD reactor with rotation
Materials Science Forum(ISSN 0255-5476) Volume 389-3, 2002.
Web of Science® Times Cited: 4
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Urban Forsberg, Anne Henry, N. Rorsman, J. Eriksson, M. K. Linnarsson, Örjan Danielsson, Liutauras Storasta and Erik Janzén
Growth and characterisation 4H-SiC MESFET structures grown by Hot-Wall CVD
Proc. of the MRS 2000 Fall Meeting, 2001.
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Urban Forsberg, Anne Henry, Örjan Danielsson, M.K. Linnarsson and Erik Janzén
Influence of growth parameters on the nitrogen incorporation in 4H- and 6H-SiC epilayers grown by hot-wall chemical vapour deposition
Proc. of the MRS Spring Meeting 2001, 680E, 2001.
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A. Ellison, Björn Magnusson, Carl Hemmingsson, W. Magnusson, Tihomir Iakimov, Liutauras Storasta, Anne Henry, N. Henelius and Erik Janzén
HTCVD Growth of Semi-Insulating 4H-SiC Crystals With Low Defect Density
Mat. Res. Soc. Symp. Proc., Vol. 640, 2001.
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Mikael Syväjärvi, Rositsa Yakimova, Anne Henry, Anelia Kakanakova-Georgieva, M Linnarsson and Erik Janzén
Optical properties of aluminium and nitrogen in compensated 4H-SiC epitaxial layers
Materials Research Society Symposium Proceedings, Vol. 640, 2001.
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SG Sridhara, Fredrik Carlsson, JP Bergman, Anne Henry and Erik Janzén
Investigation of an ion-implantation induced high temperature persistent intrinsic defect in SiC
Materials Science Forum, Vols. 353-356, 2001.
Web of Science® Times Cited: 7
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Anne Henry, Björn Magnusson, MK Linnarsson, A Ellison, Mikael Syväjärvi, Rositsa Yakimova and Erik Janzén
Presence of hydrogen in SiC
Materials Science Forum, Vols. 353-356, 2001.
Web of Science® Times Cited: 8
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Ö Danielsson, Urban Forsberg, Anne Henry and Erik Janzén
Enlarging the usable growth area in a hot-wall silicon carbide CVD reader by using simulation
Materials Science Forum, Vols. 353-356, 2001.
Web of Science® Times Cited: 2
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J Zhang, A Ellison, O Danielsson, Anne Henry and Erik Janzén
Epitaxial growth of 4H-SiC in a vertical hot-wall CVD reactor: Comparison between up- and down-flow orientations
Materials Science Forum, Vols. 353-356, 2001.
Web of Science® Times Cited: 1
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Erik Janzén, Anne Henry, Peder Bergman, A. Ellison and Björn Magnusson
Material characterization need for SiC-based devices
Sci. Eng. B, Vol. 4, 2001.
Web of Science® Times Cited: 30
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Qamar Ul Wahab, A. Ellson, J. Zhang, Urban Forsberg, E. Duranova, Anne Henry, L.D. Madsen and Erik Janzén
Power Schottky rectifiers and microwave transistors in 4H-SiC
<em>Proc. of the International Workshop on Semiconductor Devices</em>, 2000.
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Peder Bergman, A. Ellison, Anne Henry, Liutauras Storasta and Erik Janzén
The role of defects on optical and electrical properties of SiC
SIMC-XI 2000, 2000.
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Tanja Paskova, Sukkaneste Tungasmita, E Valcheva, EB Svedberg, B Arnaudov, S Evtimova, Per Persson, Anne Henry, R Beccard, M Heuken and Bo Monemar
Hydride vapour phase homoepitaxial growth of GaN on MOCVD-grown 'templates'
MRS99 Fall Meeting, 2000.
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Qamar Ul Wahab, A Ellison, Christer Hallin, Anne Henry, J Di Persio, R Martinez and Erik Janzén
Influence of epitaxial growth and substrate induced defects on the breakdown of high-voltage 4H-SiC Schottky diodes
Materials Science Forum(ISSN 0255-5476), Volume 338-3, 2000.
Web of Science® Times Cited: 23
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Qamar Ul Wahab, A Ellison, J Zhang, Urban Forsberg, E Duranova, Anne Henry, LD Madsen and Erik Janzén
Designing, physical simulation and fabrication of high-voltage (3.85 kV) 4H-SiC Schottky rectifiers processed on hot-wall and chimney CVD films
Materials Science Forum, Vols. 338-342, 2000.
Web of Science® Times Cited: 6
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Anne Henry, T Egilsson, Ivan Gueorguiev Ivanov and Erik Janzén
Metastability of a hydrogen-related defect in 6H-SiC
Materials Science Forum, Vols. 338-342, 2000.
Web of Science® Times Cited: 6
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T Egilsson, Ivan Gueorguiev Ivanov, Anne Henry and Erik Janzén
Pseudo-donors in SiC
Materials Science Forum, Vols. 338-342, 2000.
Web of Science® Times Cited: 2
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Urban Forsberg, Anne Henry, MK Linnarsson and Erik Janzén
Photoluminescence study of CVD layers highly doped with nitrogen
Materials Science Forum, Vols. 338-342, 2000.
Web of Science® Times Cited: 4
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Rositsa Yakimova, Mikael Syväjärvi, S Rendakova, VA Dimitriev, Anne Henry and Erik Janzén
Micropipe healing in liquid phase epitaxial growth of SiC
Materials Science Forum, Vols. 338-342, 2000.
Web of Science® Times Cited: 22
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Mikael Syväjärvi, Rositsa Yakimova, Henrik Jacobsson, MK Linnarsson, Anne Henry and Erik Janzén
High growth rate epitaxy of thick 4H-SiC layers
Materials Science Forum, Vols. 338-342, 2000.
Web of Science® Times Cited: 6
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A Ellison, J Zhang, W Magnusson, Anne Henry, Qamar Ul Wahab, Peder Bergman, Carl Hemmingsson, Tien Son Nguyen and Erik Janzén
Fast SiC epitaxial growth in a chimney CVD reactor and HTCVD crystal growth developments
Materials science Forum, Vols. 338-342, 2000.
Web of Science® Times Cited: 28
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Ph.D. Theses
* Social media data based on publications from 2011 to present and with a DOI; data delivered by Altmetric.com.
Ph.D., Lic. Theses
