Publications for Anne Henry
Co-author map based on ISI articles 2007-

Publications mentioned in social media 10 times*

Keywords

temperature substrates silicon sic quality optical on-axis epitaxial epilayers energy electrical diodes degrees cvd chloride-based c/si behavior annealing 4h-sic 3c-sic

Journal Articles

M. Chubarov, Henrik Pedersen, Hans Högberg, Zs. Czigany and Anne Henry
  Chemical vapour deposition of epitaxial rhombohedral BN thin films on SiC substrates
 
Altmetric usage: 6

  CrysteEngComm, 2014, 16(24), 5430-5436.
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Xun Li, Henrik Jacobson, Alexandre Boulle, Didier Chaussende and Anne Henry
  Double-Position-Boundaries Free 3C-SiC Epitaxial Layers Grown on On-Axis 4H-SiC
  ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2014, 3(4), P75-P81.

M. Chubarov, Henrik Pedersen, Hans Högberg, Stanislav Filippov, J.A. A. Engelbrecht, J. O'Connel and Anne Henry
  Boron nitride: A new photonic material
  Physica. B, Condensed matter, 2014, 439, 29-34.
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J.A. A. Engelbrecht, Erik Janzén, Anne Henry and I.J. van Rooyen
  Impact of dielectric parameters on the reflectivity of 3C-SiC wafers with a rough surface morphology in the reststrahlen region
  Physica. B, Condensed matter, 2014, 439, 115-118.

Anne Henry and Erik Janzén
  Epitaxial growth and characterisation of 4H-SiC layers
  Journal of the Japanese Association for Crystal Growth, 2013, 40(1), 42-48.

N. Thierry-Jebali, A. Vo-Ha, D. Carole, M. Lazar, G. Ferro, D. Planson, Anne Henry and P. Brosselard
  Very low specific contact resistance measurements made on a highly p-type doped 4H-SiC layer selectively grown by vapor-liquid-solid transport
  Applied Physics Letters, 2013, 102(21), 212108.
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 Web of Science® Times Cited: 3

Stefano Leone, Anne Henry, Erik Janzén and S. Nishizawa
  Epitaxial growth of SiC with chlorinated precursors on different off-angle substrates
  Journal of Crystal Growth, 2013, 362, 170-173.
 Web of Science® Times Cited: 4

Mikhail Chubarov, Henrik Pedersen, Hans Högberg and Anne Henry
  On the effect of silicon in CVD of sp2 hybridized boron nitride thin films
 
Altmetric usage: 4

  CrysteEngComm, 2013, 15(3), 455-458.
 Web of Science® Times Cited: 6

N Thierry-Jebali, Jawad ul-Hassan, M Lazar, D Planson, E Bano, Anne Henry, Erik Janzén and P Brosselard
  Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodes
  Applied Physics Letters, 2012, 101(22), 222111.
 Web of Science® Times Cited: 3

J H Choi, L Latu-Romain, E Bano, Anne Henry, W J Lee, T Chevolleau and T Baron
  Comparative study on dry etching of alpha- and beta-SiC nano-pillars
  Materials letters (General ed.), 2012, 87, 9-12.
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 Web of Science® Times Cited: 1

Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, J Isoya, N Morishita, T Ohshima and Erik Janzén
  Capacitance transient study of a bistable deep level in e(-)-irradiated n-type 4H-SiC
  Journal of Physics D: Applied Physics, 2012, 45(45), .
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 Web of Science® Times Cited: 1

I J van Rooyen, J H Neethling, Anne Henry, Erik Janzén, S M Mokoduwe, A Janse van Vuuren and E Olivier
  Effects of phosphorous-doping and high temperature annealing on CVD grown 3C-SiC
  Nuclear Engineering and Design, 2012, 251(SI), 191-202.
 Web of Science® Times Cited: 1

Henrik Pedersen, Carina Höglund, Jens Birch, Jens Jensen and Anne Henry
  Low Temperature CVD of Thin, Amorphous Boron-Carbon Films for Neutron Detectors
  Chemical Vapor Deposition, 2012, 18(7-9), 221-224.
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 Web of Science® Times Cited: 1

Henrik Pedersen, Mikhail Chubarov, Hans Högberg, Jens Jensen and Anne Henry
  On the effect of water and oxygen in chemical vapor deposition of boron nitride
  Thin Solid Films, 2012, 520(18), 5889-5893.
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 Web of Science® Times Cited: 2

Mikhail Chubarov, Henrik Pedersen, Hans Högberg, Jens Jensen and Anne Henry
  Growth of High Quality Epitaxial Rhombohedral Boron Nitride
  Crystal Growth & Design, 2012, 12(6), 3215-3220.
 Web of Science® Times Cited: 6

Henrik Pedersen, Stefano Leone, Olle Kordina, Anne Henry, Shin-ichi Nishizawa, Yaroslav Koshka and Erik Janzén
  Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications
  Chemical Reviews, 2012, 112(4), 2434-2453.
 Web of Science® Times Cited: 23

J A A Engelbrecht, I J van Rooyen, Anne Henry, Erik Janzén and E J Olivier
  The origin of a peak in the reststrahlen region of SiC
  Physica. B, Condensed matter, 2012, 407(10), 1525-1528.
 Web of Science® Times Cited: 3

Andreas Gällström, Björn Magnusson, Franziska Beyer, Adam Gali, Nguyen Son Tien, Stefano Leone, Ivan Gueorguiev Ivanov, Carl Hemmingsson, Anne Henry and Erik Janzén
  Optical identification and electronic configuration of tungsten in 4H-and 6H-SiC
  Physica. B, Condensed matter, 2012, 407(10), 1462-1466.
 Web of Science® Times Cited: 2

Anne Henry, Stefano Leone, Franziska Beyer, Henrik Pedersen, Olle Kordina, Sven Andersson and Erik Janzén
  SiC epitaxy growth using chloride-based CVD
  Physica. B, Condensed matter, 2012, 407(10), 1467-1471.
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 Web of Science® Times Cited: 5

Stefano Leone, Olle Kordina, Anne Henry, Shin-ichi Nishizawa, Örjan Danielsson and Erik Janzén
  Gas-Phase Modeling of Chlorine-Based Chemical Vapor Deposition of Silicon Carbide
  Crystal Growth & Design, 2012, 12(4), 1977-1984.
 Web of Science® Times Cited: 3

I J van Rooyen, J A A Engelbrecht, Anne Henry, Erik Janzén, J H Neethling and P M van Rooyen
  The effect of grain size and phosphorous-doping of polycrystalline 3C-SiC on infrared reflectance spectra
  Journal of Nuclear Materials, 2012, 422(1-3), 103-108.
 Web of Science® Times Cited: 1

Patrik Scajev, Jawad Hassan, Kestutis Jarasiunas, Masashi Kato, Anne Henry and J Peder Bergman
  Comparative Studies of Carrier Dynamics in 3C-SiC Layers Grown on Si and 4H-SiC Substrates
  JOURNAL OF ELECTRONIC MATERIALS, 2011, 40(4), 394-399.
 Web of Science® Times Cited: 8

D. Dochev, V. Desmaris, A. Pavolotsky, D. Meledin, Z. Lai, Anne Henry, Erik Janzén, E. Pippel, J. Woltersdorf and V. Belitsky
  Growth and characterization of epitaxial ultra-thin NbN films on 3C-SiC/Si substrate for terahertz applications
  Superconductors Science and Technology, 2011, 24(3), 035016.
 Web of Science® Times Cited: 5

Christer M Andersson, Niclas Ejebjörk, Anne Henry, Sven Andersson, Erik Janzén, Herbert Zirath and Niklas Rorsman
  A SiC Varactor With Large Effective Tuning Range for Microwave Power Applications
  IEEE ELECTRON DEVICE LETTERS, 2011, 32(6), 788-790.
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 Web of Science® Times Cited: 10

Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, Erik Janzén, J. Isoya, N. Morishita and T. Ohshima
  Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n-type 4H-SiC
  Journal of Applied Physics, 2011, 109(10), 103703.
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 Web of Science® Times Cited: 2

Mihails Cubarovs, Henrik Pedersen, Hans Högberg, Vanya Darakchieva, Jensen Jens, Per Persson and Anne Henry
  CVD growth of sp2-hybridized boron nitride using aluminum nitride as buffer layer
  Physica Status Solidi. Rapid Research Letters, 2011, 5(10-11), 397-399.
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 Web of Science® Times Cited: 8

Franziska Beyer, Carl Hemmingsson, Stefano Leone, Y.-C. Lin, Henrik Gällström, Anne Henry and Erik Janzén
  Deep levels in iron doped n- and p-type 4H-SiC
  Journal of Applied Physics, 2011, 110, 123701-1-123701-5.
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 Web of Science® Times Cited: 2

Franziska Beyer, Carl Hemmingsson, Andreas Gällström, Stefano Leone, Henrik Pedersen, Anne Henry and Erik Janzén
  Deep levels in tungsten doped n-type 3C-SiC
  Applied Physics Letters, 2011, 98(15), 152104.
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 Web of Science® Times Cited: 9

Stefano Leone, Franziska Beyer, Henrik Pedersen, Sven Andersson, Olle Kordina, Anne Henry and Erik Janzén
  Chlorinated precursor study in low temperature CVD of 4H-SiC
  Thin Solid Films, 2011, 519(10), 3074-3080.
 Web of Science® Times Cited: 10

Stefano Leone, Franziska Beyer, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén
  Growth of smooth 4H-SiC epilayers on 4° off-axis substrates with chloride-based CVD at very high growth rate
  Materials research bulletin, 2011, 46(8), 1272-1275.
 Web of Science® Times Cited: 8

Nguyen Tien Son, J. Isoya, T Umeda, Ivan Gueorguiev Ivanov, Anne Henry, T. Ohshima and Erik Janzén
  EPR and ENDOR Studies of Shallow Donors in SiC
  Applied Magnetic Resonance, 2010, 39(1-2), 49-85.
 Web of Science® Times Cited: 3

Ivan Gueorguiev Ivanov, Anne Henry, Fei Yan, W J Choyke and Erik Janzén
  Ionization energy of the phosphorus donor in 3C-SiC from the donor-acceptor pair emission
  JOURNAL OF APPLIED PHYSICS, 2010, 108(6), 063532.
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 Web of Science® Times Cited: 4

Jawad ul-Hassan, Anne Henry, P. J. McNally and J. Peder Bergman
  Characterization of the Carrot Defect in 4H-SiC Epitaxial Layers
  Journal of Crystal Growth, 2010, 313, 1828-1837.
 Web of Science® Times Cited: 12

Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, J Isoya, N Morishita, T Ohshima and Erik Janzén
  Bistable defects in low-energy electron irradiated n-type 4H-SiC
  PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2010, 4(8-9), 227-229.
 Web of Science® Times Cited: 3

Stefano Leone, Anne Henry, Sven Andersson, Olle Kordina and Erik Janzén
  Optimization of a Concentrated Chloride-Based CVD Process for 4H–SiC Epilayers
  Journal of the Electrochemical Society, 2010, 157(10), H969-H979.
 Web of Science® Times Cited: 6

Stefano Leone, Franziska Beyer, Anne Henry, Olle Kordina and Erik Janzén
  Chloride-based CVD of 3C-SiC epitaxial layers on 6H(0001) SiC
  Physica Status Solidi (RRL) – Rapid Research Letters, 2010, 4(11), 305-307.
 Web of Science® Times Cited: 14

Stefano Leone, Franziska Beyer, Anne Henry, Carl Hemmingsson, Olle Kordina and Erik Janzén
  Chloride-Based SiC Epitaxial Growth toward Low Temperature Bulk Growth
  Crystal Growth & Design, 2010, 10(8), 3743-3751.
 Web of Science® Times Cited: 10

Stefano Leone, Franziska Beyer, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén
  High growth rate of 4H-SiC epilayers grown on on-axis substrates with different chlorinated precursors
  Crystal Growth & Design, 2010, 10(12), 5334-5340.
 Web of Science® Times Cited: 15

Nargis Bano, I Hussain, Omer Nour, Magnus Willander, Qamar Ul Wahab, Anne Henry, H S Kwack and D Le Si Dang
  Depth-resolved cathodoluminescence study of zinc oxide nanorods catalytically grown on p-type 4H-SiC
  Journal of Luminescence, 2010, 130(6), 963-968.
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 Web of Science® Times Cited: 14

Enrico Mastropaolo, Rebecca Cheung, Anne Henry and Erik Janzén
  Electrothermal actuation of silicon carbide ring resonators
  Journal of Vacuum Science & Technology B, 2009, 27(6), 3109-3114.
 Web of Science® Times Cited: 4

Anne Henry, Anders Lundskog and Erik Janzén
  Large area mapping of the alloy composition of AlxGa1-xN using infrared reflectivity
  PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2009, 3(5), 145-147.
 Web of Science® Times Cited: 4

Jawad ul-Hassan, Anne Henry, Ivan Gueorguiev Ivanov and J. Peder Bergman
  In-grown stacking faults in 4H-SiC epilayer grown on off-cut substrates
  Journal of Applied Physics, 2009, 105(12), 123513.
 Web of Science® Times Cited: 18

Henrik Pedersen, Franziska Beyer, Anne Henry and Erik Janzén
  Acceptor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD
  Journal of Crystal Growth, 2009, 311(13), 3364-3370.
 Web of Science® Times Cited: 12

Stefano Leone, Henrik Pedersen, Anne Henry, Olle Kordina and Erik Janzén
  Thick homoepitaxial layers grown on on-axis Si-face 6H- and 4H-SiC substrates with HCl addition
  Journal of Crystal Growth, 2009, 312(1), 24-32.
 Web of Science® Times Cited: 13

Henrik Pedersen, Franziska Beyer, Jawad ul-Hassan, Anne Henry and Erik Janzén
  Donor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD
  Journal of Crystal Growth, 2009, 311(5), 1321-1327.
 Web of Science® Times Cited: 14

Stefano Leone, Henrik Pedersen, Anne Henry, Olle Kordina and Erik Janzén
  Improved morphology for epitaxial growth on 4° off-axis 4H-SiC substrates
  Journal of Crystal Growth, 2009, 311(12), 3265-3272.
 Web of Science® Times Cited: 23

Nargis Bano, Zafar Hussain Ibupoto, Omer Nour, Magnus Willander, P Klason and Anne Henry
  Study of luminescent centers in ZnO nanorods catalytically grown on 4H-p-SiC
  Semiconductor Science and Technology, 2009, 24(12), 125015.
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 Web of Science® Times Cited: 13

M. Sudow, H.M. Nemati, M. Thorsell, U. Gustavsson, K. Andersson, C. Fager, P.-A. Nilsson, Jawad ul-Hassan, Anne Henry, Erik Janzén, R. Jos and N. Rorsman
  SiC varactors for dynamic load modulation of high power amplifiers
  IEEE Electron Device Letters, 2008, 29(7), 728-730.
 Web of Science® Times Cited: 6

Jawad ul-Hassan, J. Peder Bergman, Anne Henry and Erik Janzén
  On-axis homoepitaxial growth on Si-face 4H–SiC substrates
  Journal of Crystal Growth, 2008, 310(20), 4424-4429.
   Fulltext  PDF  
 Web of Science® Times Cited: 28

Jawad ul-Hassan, J. Peder Bergman, Anne Henry and Erik Janzén
  In-situ surface preparation of nominally on-axis 4H-SiC substrates
  Journal of Crystal Growth, 2008, 310(20), 4430-4437.
   Fulltext  PDF  
 Web of Science® Times Cited: 20

Henrik Pedersen, Stefano Leone, Anne Henry, Anders Lundskog and Erik Janzén
  Growth characteristics of chloride-based SiC epitaxial growth
  Physica status solidi (RRL) - Rapid Research Letters, 2008, 2(6), 278-280.
 Web of Science® Times Cited: 27

Henrik Pedersen, Stefano Leone, Anne Henry, Vanya Darakchieva, Patrick Carlsson, Andreas Gällström and Erik Janzén
  Very high crystalline quality of thick 4H-SiC epilayers grown from methyltrichlorosilane (MTS)
  Physica status solidi (RRL) - Rapid Research Letters, 2008, 2(4), 188-190.
 Web of Science® Times Cited: 17

Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Beyer, Vanya Darakchieva and Erik Janzén
  Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS)
  Journal of Crystal Growth, 2007, 307(2), 334-340.
 Web of Science® Times Cited: 59

Son Tien Nguyen, Anne Henry, J. Isoya, M. Katagiri, A. Gali and Erik Janzén
  Electron paramagnetic resonance and theoretical studies of shallow phosphorous centers in 3C-, 4H-, and 6H-SiC
  , 2006, , .
 Web of Science® Times Cited: 27

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, Anne Henry, Ivan Gueorguiev Ivanov, Peder Bergman, Bo Monemar, S. Chichibu and T. Onuma
  Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC
  Journal of Applied Physics, 2006, 99(9), .
 Web of Science® Times Cited: 35

Anne Henry, Jawad ul-Hassan, Peder Bergman, Christer Hallin and Erik Janzén
  Thick Silicon Carbide Homoepitaxial Layers Grown by CVD Techniques
  Chemical Vapor Deposition, 2006, 12(8-9), 475-482.
 Web of Science® Times Cited: 52

Anne Henry, Urban Forsberg, M. K. Linnarsson and Erik Janzén
  Determination of nitrogen doping concentration in doped 4H-SiC epilayers by low temperature photoluminescence
  Physica Scripta, 2005, 72(2-3), 254-257.
 Web of Science® Times Cited: 6

Ivan Gueorguiev Ivanov, Anne Henry and Erik Janzén
  Ionization energies of phosphorus and nitrogen donors and aluminum acceptors in 4H silicon carbide from the donor-acceptor pair emission
  Physical Review B. Condensed Matter and Materials Physics, 2005, 71(24), 241201-241201-4.
 Web of Science® Times Cited: 18

H. Jacobson, Rositsa Yakimova, P. Raback, Mikael Syväjärvi, Anne Henry, T. Tuomi and Erik Janzén
  Lateral enlargement of silicon carbide crystals
  Journal of Crystal Growth, 2004, 270(1-2), .
 Web of Science® Times Cited: 2

Liutauras Storasta, J.R. Bergman, Erik Janzén, Anne Henry and J. Lu
  Deep levels created by low energy electron Irradiation in 4H-SiC
  Journal of Applied Physics, 2004, 96(9), 4909-4915.
 Web of Science® Times Cited: 135

Anne Henry, U. Forsberg, M.S. Janson and Erik Janzén
  The 3838 Å photoluminescence line in 4H-SiC
  Journal of Applied Physics, 2003, 94(5), 2901-2906.
 Web of Science® Times Cited: 6

Urban Forsberg, Örjan Danielsson, Anne Henry, M. K. Linnarsson and Erik Janzén
  Aluminum doping of epitaxial Silicon Carbide
  Journal of Crystal Growth, 2003, 253(1-4), 340-350.
 Web of Science® Times Cited: 46

H. Jacobson, Jens Birch, Christer Hallin, Anne Henry, Rositsa Yakimova, T. Tuomi, Erik Janzén and Ulf Lindefelt
  Doping-induced strain in N-doped 4H-SiC crystals
  Applied Physics Letters, 2003, 82(21), 3689-3691.
 Web of Science® Times Cited: 20

A. Ellison, J. Zhang, Anne Henry and Erik Janzén
  Epitaxial growth of SiC in a chimney CVD reactor
  Journal of Crystal Growth, 2002, 236(1-3), 225-238.
 Web of Science® Times Cited: 30

Urban Forsberg, Örjan Danielsson, Anne Henry, M. K. Linnarsson and Erik Janzén
  Nitrogen doping of epitaxial Silicon Carbide
  Journal of Crystal Growth, 2002, 236(1-3), 101-112.
 Web of Science® Times Cited: 43

Örjan Danielsson, Urban Forsberg, Anne Henry and Erik Janzén
  Investigation of the temperature profile in a hot-wall SiC chemical vapour deposition reactor
  Journal of Crystal Growth, 2002, 235(1-4), 352-364.
 Web of Science® Times Cited: 20

T. Egilsson, Ivan Gueorguiev Ivanov, Anne Henry and Erik Janzén
  Excitation spectra of nitrogen bound excitons in 4H- and 6H-SiC
  Journal of Applied Physics, 2002, 91(3), 2028-2032.
 Web of Science® Times Cited: 7

J. Zhang, Urban Forsberg, M. Isacson, A. Ellison, Anne Henry, O. Kordina and Erik Janzén
  Growth characteristics of SiC in a hot-wall CVD reactor with rotation
  Journal of Crystal Growth, 2002, 241(4), 431-438.
 Web of Science® Times Cited: 14

Örjan Danielsson, Anne Henry and Erik Janzén
  Growth rate predictions of chemical vapor deposited silicon carbide epitaxial layers
  Journal of Crystal Growth, 2002, 243(1), 170-184.
 Web of Science® Times Cited: 67

Anelia Kakanakova-Georgieva, Rositsa Yakimova, Anne Henry, M.K. Linnarsson, Mikael Syväjärvi and Erik Janzén
  Cathodoluminescence identification of donor-acceptor related emissions in as-grown 4H-SiC layers
  Journal of Applied Physics, 2002, 91(5), 2890-2895.
 Web of Science® Times Cited: 18

Jie Zhang, Alexandre Ellison, Örjan Danielsson, M. K. Linnarsson, Anne Henry and Erik Janzén
  Epitaxial growth of 4H SiC in a vertical hot-wall CVD reactor: Comparison between up- and down-flow orientations
  Journal of Crystal Growth, 2002, 241(4), 421-430.

Ivan Gueorguiev Ivanov, T Egilsson, Anne Henry, Bo Monemar and Erik Janzén
  Resonant sharp hot free-exciton luminescence in 6H-and 4H-SiC due to inhibited exciton-phonon interaction
  Physical Review B. Condensed Matter and Materials Physics, 2001, 64(8), .
 Web of Science® Times Cited: 6

O.P.A. Lindquist, Kenneth Järrendahl, S. Peters, J.T. Zettler, C. Cobet, N. Esser, D.E. Aspnes, Anne Henry and N.V. Edwards
  Ordinary and extraordinary dielectric functions of 4H- and 6H-SiC from 3.5 to 9.0 eV
  Applied Physics Letters, 2001, 78(18), 2715-2717.
 Web of Science® Times Cited: 15

Liutauras Storasta, Fredrik Carlsson, S.G. Sridhara, Peder Bergman, Anne Henry, T. Egilsson, A. Hallen and Erik Janzén
  Pseudodonor nature of the D1 defect in 4H-SiC
  Applied Physics Letters, 2001, 78(1), 46-48.
 Web of Science® Times Cited: 71

Qamar Ul Wahab, A Ellison, Anne Henry, Erik Janzén, Christer Hallin, J Di Persio and R Martinez
  Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H-SiC Schottky diodes
  Applied Physics Letters, 2000, 76(19), 2725-2727.
 Web of Science® Times Cited: 98

Tanja Paskova, E.M. Goldys, Rositsa Yakimova, E.B. Svedberg, Anne Henry and Bo Monemar
  Influence of growth rate on the structure of thick GaN layers grown by HVPE
  Journal of Crystal Growth, 2000, 208(1), 18-26.
 Web of Science® Times Cited: 34

T. Egilsson, Anne Henry, Ivan Gueorguiev Ivanov, A. Ellison and Erik Janzén
  Excitation properties of hydrogen-related photoluminescence in 6H-SiC
  Physical Review B. Condensed Matter and Materials Physics, 2000, 62(11), 7162-7168.
 Web of Science® Times Cited: 7

T Egilsson, Ivan Gueorguiev Ivanov, Anne Henry and Erik Janzén
  Zeeman spectroscopy of the D-1 bound exciton in 3C-, and 4H-SiC
  Physica. B, Condensed matter, 1999, 274, 677-680.

Mikael Syväjärvi, Rositsa Yakimova, M Tuominen, Anelia Kakanakova-Georgieva, M F Macmillan, Anne Henry, Qamar Ul Wahab and Erik Janzén
  Growth of 6H and 4H-SiC by sublimation epitaxy
  Journal of Crystal Growth, 1999, 197(1-2), 155-162.

Olle Kordina, Christer Hallin, Anne Henry, Peder Bergman, Ivan Gueorguiev Ivanov, A. Ellison, Nguyen Tien Son and Erik Janzén
  Growth of SiC by "Hot-Wall" CVD and HTCVD
  Physica status solidi. B, Basic research, 1997, 202(1), 321-334.

Chapters in Books

Erik Janzén, Adam Gali, Anne Henry, Ivan Gueorguiev Ivanov, Björn Magnusson and Son Tien Nguyen
  Defects in SiC
  Defects in Microelectronic Materials and Devices, Taylor and Francis LLC, 2008, 770.


T Egilsson, Ivan Gueorguiev Ivanov, Nguyen Tien Son, Anne Henry, Peder Bergman and Erik Janzén
  Exciton and defect photoluminescence from SiC
  Silicon carbide and related materials 2002: ECSCRM 2002 proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden, , 2003, 81-120.


Conference Articles

N. Thierry-Jebali, M. Lazar, A. Vo-Ha, D. Carole, V. Souliere, Anne Henry, D. Planson, G. Ferro, L. Konczewicz, S. Contreras, C. Brylinski and P. Brosselard
  Applications of vapor-liquid-solid selective epitaxy of highly p-type doped 4H-SiC: PiN diodes with peripheral protection and improvement of specific contact resistance of ohmic contacts
  SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014.


M. Florentin, J. Montserrat, P. Brosselard, Anne Henry and P. Godignon
  Rapid thermal oxidation of Si-Face N and P-type on-axis 4H-SiC
  SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014.


Xun Li, Erik Janzén and Anne Henry
  Homo-epitaxial growth on low-angle off cut 4H-SiC substrate
  SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014.


J.H. Choi, Laurence Latu-Romain, Edvige Bano, Anne Henry, W.J. Lee, T Chevolleau and Thierry Baron
  Comparative study on dry etching of α- and β-SiC nano-pillars
  Silicon Carbide and Related Materials 2012, 2013.


M. Chubarov, Henrik Pedersen, Hans Högberg, Stanislav Filippov, J.A. A. Engelbrecht, J. O'Connel and Anne Henry
  Characterization of Boron Nitride Thin Films
  2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR), 2013.


Nicolas Thierry-Jebali, Mihai Lazar, Arthur Vo-Ha, Davy Carole, Veronique Souliere, Farah Laariedh, Jawad ul-Hassan, Anne Henry, Erik Janzen, Dominique Planson, Gabriel Ferro, Christian Brylinski and Pierre Brosselard
  Electrical Characterization of PiN Diodes with p(+) layer Selectively Grown by VLS Transport
  Silicon Carbide and Related Materials 2012, 2013.


 Web of Science® Times Cited: 3

Anne Henry, Xun Li, Henrik Jacobson, Sven Andersson, Alexandre Boulle, Didier Chaussende and Erik Janzén
  3C-SiC Heteroepitaxy on Hexagonal SiC Substrates
  Silicon Carbide and Related Materials 2012, 2013.


  Fulltext PDF

Henrik Jacobson, Xun Li, Erik Janzén and Anne Henry
  Structural investigation of heteroepitaxial 3C-SiC grown on 4H-SiC substrates
  SILICON CARBIDE AND RELATED MATERIALS 2012, 2013.


Anne Henry, Ivan Gueorguiev Ivanov, Erik Janzén, Tomoaki Hatayama, Hiroshi Yano and Takashi Fuyuki
  Photoluminescence of 8H-SiC
  Silicon Carbide and Related Materials 2012, 2013.


 Web of Science® Times Cited: 1  Fulltext PDF

Ivan Gueorguiev Ivanov, Andreas Gällström, Stefano Leone, Olle Kordina, Nguyen Tien Son, Anne Henry, Viktor Ivády, Adam Gali and Erik Janzén
  Optical properties of the niobium centre in 4H, 6H, and 15R SiC
  SILICON CARBIDE AND RELATED MATERIALS 2012, 2013.


Xun Li, Jawad ul Hassan, Olof Kordina, Erik Janzén and Anne Henry
  Surface preparation of 4 degrees off-axis 4H-SIC substrate for epitaxial growth
  Materials Science Forum (Volumes 740 - 742), 2013.


 Web of Science® Times Cited: 1

Anne Henry and Erik Janzén
  Growth and characterisation of SiC epilayers
  JSPS Si Symp, 2012.


Siva Kotamraju, Bharat Krishnan, Franziska C. Beyer, Anne Henry, Olle Kordina, Erik Janzén and Yaroslav Koshka
  Electrical and optical properties of high-purity epilayers grown by the low-temperature chloro-carbon growth method
  Materials Science Forum Vol 717 - 720, 2012.


 Web of Science® Times Cited: 1

Gabriel Civrac, Farah Laariedh, Nicolas Thierry-jebali, Mihai Lazar, Dominique Planson, Pierre Brosselard, Jawad ul Hassan, Anne Henry, Erik Janzén, Bertrand Vergne and Sigo Scharnholz
  600 V PiN diodes fabricated using on-axis 4H silicon carbide
  Materials Science Forum Vol 717 - 720, 2012.


 Web of Science® Times Cited: 2

Milan Yazdanfar, Stefano Leone, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén
  Carrot defect control in chloride-based CVD through optimized ramp up conditions
  Materials Science Forum Vols 717 - 720, 2012.


 Web of Science® Times Cited: 4

Stefano Leone, Henrik Pedersen, Franziska Beyer, Sven Andersson, Olle Kordina, Anne Henry, Andrea Canino, Francesco La Via and Erik Janzén
  Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles
  Materials Science Forum Vols 717 - 720, 2012.


 Web of Science® Times Cited: 1

Xun Li, Stefano Leone, Sven Andersson, Olle Kordina, Anne Henry and Erik Janzén
  CVD Heteroepitaxial Growth of 3C-SiC on 4H-SiC (0001) Substrates
  Materials Science Forum Vols 717 - 720, 2012.


 Web of Science® Times Cited: 2

Andreas Gällström, Björn Magnusson, Franziska Beyer, Adam Gali, Nguyen Tien Son, Stefano Leone, Ivan G. Ivanov, Anne Henry, Carl Hemmingsson and Erik Janzén
  Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC
  Materials Science Forum Vols 717 - 720, 2012.


Anne Henry, Xun Li, Stefano Leone, Olof Kordina and Erik Janzén
  CVD growth of 3C-SiC on 4H-SiC substrate
  Materials Science Forum Vol 711, 2012.


 Web of Science® Times Cited: 1  Fulltext PDF

Teddy Robert, Maya Marinova, Sandrine Juillaguet, Anne Henry, Efstathios K. Polychroniadis and Jean Camassel
  Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers
  <em>Materials Science Forum Vols. 679-680 (2011) pp 314-317</em>, 2011.


 Web of Science® Times Cited: 1  Fulltext PDF

Jawad ul-Hassan, Peder Bergman, Anne Henry and Erik Janzén
  High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC
  Materials Science Forum (Volumes 679 - 680), p115-118, 2011.


 Web of Science® Times Cited: 1

Ivan Ivanov, Anne Henry, Fei Yan, Wolfgang J. Choyke and Erik Janzén
  Donor-Acceptor Pair Luminescence of P-Al and N-Al Pairs in 3C-SiC and the Ionization Energy of the P Donor
  <em>Materials Science Forum Vols. 679-680 (2011) pp 245-248</em>, 2011.


  Fulltext PDF

Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, Junichi Isoya, Norio Morishita, Takeshi Ohshima and Erik Janzén
  Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC
  <em>Materials Science Forum Vols. 679-680 (2011) pp 249-252</em>, 2011.


 Web of Science® Times Cited: 1

Sadia Muniza Faraz, Muhammed Naveed Alvi, Anne Henry, Omer Nur, Magnus Willander and Qamar Ul Wahab
  Annealing Effects on Electrical and Optical Properties of N-ZnO/P-Si Heterojunction Diodes
  <em>Advanced Materials Research Vol. 324 (2011) pp 233-236</em>, 2011.


Anne Henry, Stefano Leone, Franziska C. Beyer, Sven Andersson, Olle Kordina and Erik Janzén
  Chloride based CVD of 3C-SiC on (0001) α-SiC substrates
  <em>Materials Science Forum Vols. 679-680 (2011) pp 75-78</em>, 2011.


 Web of Science® Times Cited: 6  Fulltext PDF

Stefano Leone, Yuan-Chih Lin, Franziska C. Beyer, Sven Andersson, Henrik Pedersen, Olle Kordina, Anne Henry and Erik Janzén
  Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates
  <em>Materials Science Forum Vols. 679-680 (2011) pp 59-62</em>, 2011.


 Web of Science® Times Cited: 6

T. Robert, M. Marinova, S. Juillaguet, Anne Henry, E.K. Polychroniadis and J. Camassel
  6H-type zigzag faults in low-doped 4H-SiC epitaxial layers.
  Mat. Sci. Forum, Vols. 645-648, 2010.


Anne Henry, Steffano Leone, S. Andersson, Olle Kordina and Erik Janzén
  Concentrated chloride-based epitaxial growth of 4H-SiC
  Materials Science Forum, Vols. 645-648, 2010.


 Web of Science® Times Cited: 2  Fulltext PDF

Stefano Leone, Anne Henry, Olle Kordina and Erik Janzén
  Chloride-based CVD at high growth rates on 3 vicinal off-angles SiC wafers
  ICSCRM2009, 2010.


 Web of Science® Times Cited: 4

Jawad ul-Hassan, Anne Henry and Peder Bergman
  Optical and Structural Properties of In-grown Stacking Faults in 4H-SiC Epilayers
  ICSCRM2009, 2010.


 Web of Science® Times Cited: 2

Stefano Leone, Franziska Beyer, Anne Henry, Olle Kordina and Erik Janzén
  Chloride-based CVD of 3C-SiC Epitaxial Layers on On-axis 6H (0001) SiC Substrates
  AIP Conference Proceedings, Vol. 1292, 2010.


 Web of Science® Times Cited: 1

Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, J. Isoya, N. Morishita, T. Ohshima and Erik Janzén
  Defects in low-energy electron-irradiated n-type 4H-SiC
  Physica Scripta, vol. T141, 2010.


Jawad ul-Hassan, Peder Bergman, Justinas Palisaitis, Anne Henry, P.J. McNally, S. Anderson and Erik Janzén
  Growth and properties of SiC on-axis homoepitaxial layers
  ICSCRM 2009, 2010.


 Web of Science® Times Cited: 4

Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, Junichi Isoya, Norio Morishita, Takeshi Ohshima and Erik Janzén
  Metastable defects in low-energy electron irradiated n-type 4H-SiC
  Materials Science Forum, Vols. 645-648, 2010.


 Web of Science® Times Cited: 1  Fulltext PDF

Franziska Beyer, Stefano Leone, Carl Hemmingsson, Anne Henry and Erik Janzén
  Deep levels in hetero-epitaxial as-grown 3C-SiC
  AIP Conference Proceedings, Vol. 1292, 2010.


 Web of Science® Times Cited: 1

P. Brosselard, Anne Henry, A. Pérez-Tomás, J. Montserrat, Erik Janzén and P. Godignon
  Bipolar Diode on 4H-SiC P+-Substrate
  Materials Science Forum, Vols. 600-603, 2009.


Enrico Mastropaolo, Rebecca Cheung, Anne Henry and Erik Janzén
  Fabrication of beam resonators from hot-wall chemical vapour deposited SiC
  Microelectronic Engineering, Vol. 86, 2009.


 Web of Science® Times Cited: 6

Anne Henry, Erik Janzén, E. Mastropaolo and R. Cheung
  Single Crystal and Polycrystalline 3C-SiC for MEMS Applications
  Materials Science Forum Vols. 615-617, 2009.


 Web of Science® Times Cited: 2

Franziska Beyer, Henrik Pedersen, Anne Henry and Erik Janzén
  Defects in 4H-SiC Layers Grown by Chloride-based Epitaxy
  Materials Science Forum Vols. 615-617, 2009.


 Web of Science® Times Cited: 4

Ivan Gueorguiev Ivanov, Jawad ul-Hassan, Anne Henry and Erik Janzén
  Temperature Dependence and Selective Excitation of the Phosphorus Related Photoluminescence in 4H-SiC
  Materials Science Forum, Vols. 615-617, 2009.


Jawad ul-Hassan, Peder Bergman, Anne Henry, P. Brosselard, P. Godignon and Erik Janzén
  On-axis Homoepitaxy on Full 2- 4H-SiC Wafer for High Power Applications
  Materials Science Forum Vols. 615-617, 2009.


 Web of Science® Times Cited: 2

M. Mikelsen, U. Grossner, J. Bleka, E. Monakhov, B. Svensson, Rositsa Yakimova, Anne Henry, Erik Janzén and A. Lebedev
  Carrier Removal in Electron Irradiated 4H and 6H SiC
  Materials Science Forum, Vols. 600-603, 2009.


 Web of Science® Times Cited: 5

Anne Henry, Peder Bergman and Erik Janzén
  Titanium Related Luminescence in SiC
  ICSCRM2007,2007, 2009.


Ivan Gueorguiev Ivanov, C. Persson, Anne Henry and Erik Janzén
  Wave-Function Symmetry and the Properties of Shallow P Donors in 4H SiC
  Materials Science Forum, Vols. 600-603, 2009.


 Web of Science® Times Cited: 3

Andreas Gällström, Björn Magnusson, A. Thuaire, Anne Henry, Plamen Paskov and Erik Janzén
  The Electronic Structure of the UD-4 defect in 4H, 6H and 15R SiC
  Materials Science Forum, Vols. 600-603, 2009.


 Web of Science® Times Cited: 2

Stefano Leone, Henrik Pedersen, Anne Henry, S. Rao, Olle Kordina and Erik Janzén
  Growth of Thick 4H-SiC Epitaxial Layers on On-axis Si-Face Substrates with HCl Addition
  Materials Science Forum, Vols. 615-617, 2009.


 Web of Science® Times Cited: 6

Anne Henry, Stefano Leone, Henrik Pedersen, Olle Kordina and Erik Janzén
  Growth of 4H-SiC Epitaxial Layers on 4° Off-axis Si-face substrates
  Materials Science Forum, Vols. 615-617, 2009.


Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Beyer, Anders Lundskog and Erik Janzén
  Chloride-based SiC epitaxial growth
  Materials Science Forum Vols. 615-617, 2009.


 Web of Science® Times Cited: 1

S. Hahn, Franziska Beyer, Andreas Gällström, Patrick Carlsson, Anne Henry, Björn Magnusson, J. Niklas and Erik Janzén
  Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material
  Materials Science Forum Vols. 600-603, 2009.


 Web of Science® Times Cited: 2

Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Beyer, Vanya Darakchieva and Erik Janzén
  Very high growth rate of 4H-SiC using MTS as chloride-based precursor
  Materials Science Forum, Vol. 600-603, 2009.


 Web of Science® Times Cited: 4

Anne Henry, Anders Lundskog, Justinas Palisaitis, Ivan Ivanov, Anelia Kakanakova-Georgieva, Urban Forsberg, Per Persson and Erik Janzén
  AlGaN Multiple Quantum Wells and AlN Grown in a Hot-wall MOCVD for Deep UV Applications
  ECS Transactions, Vol. 25, Iss. 8, 2009.


Stefano Leone, Henrik Pedersen, Anne Henry, Olle Kordina and Erik Janzén
  Homoepitaxial growth of 4H-SiC on on-axis Si-face substrates using chloride-based CVD
  International Conference on Silicon Carbide and Related Materials(ICSCRM-2007), 14-19 October 2007, Lake Biwa Resort, Otsu, Japan, 2009.


 Web of Science® Times Cited: 19

Peder Bergman, Jawad ul-Hassan, Anne Henry, P. Godignon, P. Brosselard and Erik Janzén
  Improved SiC Epitaxial Material for Bipolar Applications
  Proc. of MRS Spring Meeting 2008, 2008.


Y. Shishkin, S.P. Rao, O. Kordina, I. Agafonov, A.A. Maltsev, Jawad ul-Hassan, Anne Henry, C. Moisson and S.E. Saddow
  CVD of 6H-SiC on Non-Basal Quasi Polar Faces
  ECSCRM 2006,2006, 2007.


Henrik Pedersen, Stefano Leone, Anne Henry, Vanya Darakchieva and Erik Janzén
  Very high epitaxial growth rate of SiC using MTS as chloride-based precursor
  Surface and Coatings Technology, Volume 201, Issue 22-23 SPEC. ISS., 2007.


 Web of Science® Times Cited: 9

Henrik Pedersen, Anne Henry, Jawad ul-Hassan, Peder Bergman and Erik Janzén
  Growth and Photoluminescence study of Aluminium doped SiC epitaxial layers
  Materials Science Forum, Vols. 556-557, 2007.


 Web of Science® Times Cited: 1

Jawad ul-Hassan, Peder Bergman, Anne Henry, Henrik Pedersen, P. J. McNally and Erik Janzén
  4H-SiC Epitaxial Layers Grown on on-axis Si-face Substrate
  Materials Science Forum, Vols. 556-557, 2007.


 Web of Science® Times Cited: 8

Anne Henry, Jawad ul-Hassan, Henrik Pedersen, Franziska Beyer, Peder Bergman, Sven Andersson, Erik Janzén and P. Godignon
  Thick epilayers for power devices
  Materials Science Forum, vol. 556-557, 2007.


 Web of Science® Times Cited: 8

Andreas Gällström, Björn Magnusson, Patrick Carlsson, Son Tien Nguyen, Anne Henry, Franziska Beyer, Mikael Syväjärvi, Rositsa Yakimova and Erik Janzén
  Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC
  Materials Science Forum, vol. 556-557, 2007.


 Web of Science® Times Cited: 5

Anne Henry and Erik Janzén
  Phosphorus-related luminescence in SiC
  Physica Scripta, Vol. T126, 2006.


 Web of Science® Times Cited: 4

Anne Henry and Erik Janzén
  Photoluminescence of Phosphorus doped SiC
  Materials Science Forum, Vols. 527-529, 2006.


Jawad ul-Hassan, Anne Henry, Peder Bergman and Erik Janzén
  Epitaxial growth of thin 4H-SiC layers with uniform doping depth profile
  Thin Solid Films, Vol. 515, 2006.


 Web of Science® Times Cited: 4

J Isoya, M Katagiri, T Umeda, S Koizumi, H Kanda, Tien Son Nguyen, Anne Henry, Adam Gali and Erik Janzén
  Pulsed EPR studies of phosphorus shallow donors in diamond and SiC
  Physica B, Vols. 376-377, 2006.


 Web of Science® Times Cited: 8

M. Mikelsen, E.V. Monakhov, J.H. Bleka, Rositsa Yakimova, Anne Henry, Erik Janzén, Alexander Lebedev and B.G. Svensson
  Irradiation Induced Carrier Loss in 4H and 6H SiC
  Materials Science Forum, Vols. 556-557, 2006.


Ivan Gueorguiev Ivanov, Anne Henry and Erik Janzén
  Donor-acceptor Pair Luminescence of Phosphorus-Aluminum and Nitrogen-Aluminum Pairs in 4H SiC
  Materials Science forum, Vols. 527-529, 2006.


J. Isoya, M. Katagiri, T. Umeda, Son Tien Nguyen, Anne Henry, A. Gali, N. Morishita, T. Ohshima, H. Itoh and Erik Janzén
  Shallow P donors in 3C-, 4H- and 6H-SiC
  Materials Science Forum, Vols. 527-529, 2006.


A. Thuaire, Anne Henry, Björn Magnusson, Peder Bergman, Weimin Chen, Erik Janzén, M. Mermoux and E. Bano
  Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques
  Materials Science Forum, Vols. 527-529, 2006.


 Web of Science® Times Cited: 2

Anne Henry and Erik Janzén
  Titanium related luminescence in SiC
  Superlattices and Microstructures, Volume 40, Issues 4-6, E-MRS 2006 Symposium S: Material Science and Technology of Wide Bandgap Semiconductors, 2006 Spring Meeting of the European Materials Research Society, 2006.


 Web of Science® Times Cited: 1

Anne Henry and Erik Janzén
  Epitaxial Growth and Characterisation of Phosphorus Doped SiC Using TBP as Precursor.
  Materials Science Forum, Vols. 483-485, 2005.


 Web of Science® Times Cited: 11

Erik Janzén, Anne Henry and Son Tien Nguyen
  Material aspects on SiC
  International Workshop Nanohard 2005, 2005.


Son Tien Nguyen, Anne Henry, J. Isoya and Erik Janzén
  Electron Paramagnetic Resonance of Shallow Phosphorous Centers in 4H- and 6H-SiC
  Materials Science Forum, Vols. 483-485, 2005.


 Web of Science® Times Cited: 5

Erik Janzén, Peder Bergman, Örjan Danielsson, Urban Forsberg, Christer Hallin, Jawad ul-Hassan, Anne Henry, Ivan Gueorguiev Ivanov, Anelia Kakanakova-Gueorguie, Per Persson and Qamar Ul Wahab
  SiC and III-nitride Growth in a Hot-wall CVD Reactor
  Materials Science Forum, ISSN 0255-5476, volume 483-485, 2005.


 Web of Science® Times Cited: 6

Anne Henry, M.S. Janson and Erik Janzén
  Properties of the bound excitons associated to the 3838Å line in 4H-SiC and the 4182Å line in 6H-SiC
  Mater. Sci. Forum, Vol. 457-460, 2004.


Liutauras Storasta, Anne Henry, Peder Bergman and Erik Janzén
  Investigations of possible nitrogen participation in the Z1/Z2 defect in 4H-SiC
  Mater. Sci. Forum, Vol. 457-460, 2004.


 Web of Science® Times Cited: 16

S.M. Bishop, E.A. Preble, Christer Hallin, Anne Henry, W. Sarney, H.-R. Chang, Liutauras Storasta, Henrik Jacobson, Z.J. Reitmeier, B.P. Wagner, Erik Janzén and R.F. Davis
  Characterization and comparison of 4H-SiC(112 over-bar 0) and 4H-SiC(0001) 8° off-axis substrates and homoepitaxial films
  Materials Research Society Symposium Proceedings, Vol. 815 Silicon Carbide 2004 - Materials, Processing and Devices,2004, 2004.


S.M. Bishop, E.A. Preble, Christer Hallin, Anne Henry, Liutauras Storasta, Henrik Jacobson, B.P. Wagner, Z.J. Reitmeier, Erik Janzén and R.F. Davis
  Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization
  Materials Science Forum, Vols. 457-460, 2004.


 Web of Science® Times Cited: 2

Erik Janzén, Ivan Gueorguiev Ivanov, Son Tien Nguyen, Björn Magnusson, Anne Henry and J. Isoya
  Defects in SiC
  International Seminar on SiC and Related Materials,2004, 2004.


HJ Chung, JQ Liu, Anne Henry and M Skowronski
  Stacking fault formation in highly doped 4H-SiC epilayers during annealing
  ECSCRM2002, 2003.


Anne Henry, M.S. Janson and Erik Janzén
  Boron-related luminescence in SiC
  , 2003.


 Web of Science® Times Cited: 3

Jens Eriksson, N Rorsman, H Zirath, Anne Henry, Björn Magnusson, A Ellison and Erik Janzén
  A comparison of MESFETs on different 4H-Silicon carbide semi-insulating substrates
  Materials Science Forum Vols. 433-434, 2003.


Liutauras Storasta, Björn Magnusson, Anne Henry, MK Linnarsson, JP Bergman and Erik Janzén
  Correlation between electrical and optical mapping of boron related complexes in 4H-SiC
  Materials Science Forum, Vols. 433-436, 2003.


Anne Henry, Liutauras Storasta and Erik Janzén
  Nitrogen delta doping in 4H-SiC epilayers
  Materials Science Forum, Vols. 433-436, 2003.


OPA Lindquist, Hans Arwin, Anne Henry and Kenneth Järrendahl
  Infrared optical properties of 3C, 4H and 6H silicon carbide
  Materials Science Forum, Vols. 433-436, 2003.


H Jacobson, Jens Birch, Ulf Lindefelt, Christer Hallin, Anne Henry, Rositsa Yakimova and Erik Janzén
  Doping-related strain in n-doped 4H-SiC crystals
  Materials Science Forum, Vols. 433-436, 2003.


Erik Janzén, Ivan Gueorguiev Ivanov, Son Tien Nguyen, Björn Magnusson, Z Zolnai, Anne Henry, Peder Bergman, Liutauras Storasta and Fredrik Carlsson
  Defects in SiC
  Physica B: Condensed Matter, Vols. 340-342, 2003.


 Web of Science® Times Cited: 14

U Zimmermann, J Osterman, J Zhang, Anne Henry and A Hallen
  Electrical characterization of high-voltage 4H-SiC diodes on high-temperature CVD-grown epitaxial layers
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 4

O Danielsson, S Jonsson, Anne Henry and Erik Janzén
  Predicting growth rates of SiC epitaxial layers grown by hot-wall chemical vapor deposition
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 2

A Syrkin, V Dmitriev, Rositsa Yakimova, Anne Henry and Erik Janzén
  Power Schottky and p-n diodes on SiC epi-wafers with reduced micropipe density
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 5

J Zhang, Urban Forsberg, M Isacson, A Ellison, Anne Henry, Olle Kordina and Erik Janzén
  Growth characteristics of SiC in a hot-wall CVD reactor with rotation
  Materials Science Forum(ISSN 0255-5476) Volume 389-3, 2002.


 Web of Science® Times Cited: 4

Anne Henry, A Ellison, Urban Forsberg, Björn Magnusson, Galia Pozina and Erik Janzén
  Characterization of bulk and epitaxial SiC material using photoluminescence spectroscopy
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 18

Urban Forsberg, Örjan Danielsson, Anne Henry, MK Linnarsson and Erik Janzén
  Aluminum doping of epitaxial silicon carbide grown by hot-wall CVD, Effect of process parameters
  Proceedings of the International Conference on Silicon Carbide and Related Materials, Tsukuba, 2001, 2002.


 Web of Science® Times Cited: 8

S Nakagomi, H Shinobu, Lars Unéus, Ingemar Lundström, Lars-Gunnar Ekedahl, Rositsa Yakimova, Mikael Syväjärvi, Anne Henry, Erik Janzén and Anita Lloyd-Spets
  Influence of epitaxial layer on SiC Schottky diode gas sensors operated under high-temperature conditions
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 1

Lars Unéus, S Nakagomi, M Linnarsson, Mona Jensen, BG Svensson, Rositsa Yakimova, Mikael Syväjärvi, Anne Henry, Erik Janzén, Lars-Gunnar Ekedahl, I Lunstrom and Anita Lloyd-Spets
  The effect of hydrogen diffusion in p- and n-type SiC Schottky diodes at high temperatures
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 5

J Zhang, A Ellison, O Danielsson, Anne Henry and Erik Janzén
  Epitaxial growth of 4H-SiC in a vertical hot-wall CVD reactor: Comparison between up- and down-flow orientations
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 1

Urban Forsberg, Anne Henry, Örjan Danielsson, M.K. Linnarsson and Erik Janzén
  Influence of growth parameters on the nitrogen incorporation in 4H- and 6H-SiC epilayers grown by hot-wall chemical vapour deposition
  Proc. of the MRS Spring Meeting 2001, 680E, 2001.


SG Sridhara, Fredrik Carlsson, JP Bergman, Anne Henry and Erik Janzén
  Investigation of an ion-implantation induced high temperature persistent intrinsic defect in SiC
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 9

Ö Danielsson, Urban Forsberg, Anne Henry and Erik Janzén
  Enlarging the usable growth area in a hot-wall silicon carbide CVD reader by using simulation
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 2

Erik Janzén, Anne Henry, Peder Bergman, A. Ellison and Björn Magnusson
  Material characterization need for SiC-based devices
  Sci. Eng. B, Vol. 4, 2001.


 Web of Science® Times Cited: 32

Urban Forsberg, Anne Henry, N. Rorsman, J. Eriksson, M. K. Linnarsson, Örjan Danielsson, Liutauras Storasta and Erik Janzén
  Growth and characterisation 4H-SiC MESFET structures grown by Hot-Wall CVD
  Proc. of the MRS 2000 Fall Meeting, 2001.


Mikael Syväjärvi, Rositsa Yakimova, Anne Henry, Anelia Kakanakova-Georgieva, M Linnarsson and Erik Janzén
  Optical properties of aluminium and nitrogen in compensated 4H-SiC epitaxial layers
  Materials Research Society Symposium Proceedings, Vol. 640, 2001.


Anne Henry, Björn Magnusson, MK Linnarsson, A Ellison, Mikael Syväjärvi, Rositsa Yakimova and Erik Janzén
  Presence of hydrogen in SiC
  Materials Science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 8

A. Ellison, Björn Magnusson, Carl Hemmingsson, W. Magnusson, Tihomir Iakimov, Liutauras Storasta, Anne Henry, N. Henelius and Erik Janzén
  HTCVD Growth of Semi-Insulating 4H-SiC Crystals With Low Defect Density
  Mat. Res. Soc. Symp. Proc., Vol. 640, 2001.


Qamar Ul Wahab, A. Ellson, J. Zhang, Urban Forsberg, E. Duranova, Anne Henry, L.D. Madsen and Erik Janzén
  Power Schottky rectifiers and microwave transistors in 4H-SiC
  <em>Proc. of the International Workshop on Semiconductor Devices</em>, 2000.


Peder Bergman, A. Ellison, Anne Henry, Liutauras Storasta and Erik Janzén
  The role of defects on optical and electrical properties of SiC
  SIMC-XI 2000, 2000.


Qamar Ul Wahab, A Ellison, Christer Hallin, Anne Henry, J Di Persio, R Martinez and Erik Janzén
  Influence of epitaxial growth and substrate induced defects on the breakdown of high-voltage 4H-SiC Schottky diodes
  Materials Science Forum(ISSN 0255-5476), Volume 338-3, 2000.


 Web of Science® Times Cited: 24

Qamar Ul Wahab, A Ellison, J Zhang, Urban Forsberg, E Duranova, Anne Henry, LD Madsen and Erik Janzén
  Designing, physical simulation and fabrication of high-voltage (3.85 kV) 4H-SiC Schottky rectifiers processed on hot-wall and chimney CVD films
  Materials Science Forum, Vols. 338-342, 2000.


 Web of Science® Times Cited: 6

Anne Henry, T Egilsson, Ivan Gueorguiev Ivanov and Erik Janzén
  Metastability of a hydrogen-related defect in 6H-SiC
  Materials Science Forum, Vols. 338-342, 2000.


 Web of Science® Times Cited: 6

T Egilsson, Ivan Gueorguiev Ivanov, Anne Henry and Erik Janzén
  Pseudo-donors in SiC
  Materials Science Forum, Vols. 338-342, 2000.


 Web of Science® Times Cited: 2

Urban Forsberg, Anne Henry, MK Linnarsson and Erik Janzén
  Photoluminescence study of CVD layers highly doped with nitrogen
  Materials Science Forum, Vols. 338-342, 2000.


 Web of Science® Times Cited: 4

Rositsa Yakimova, Mikael Syväjärvi, S Rendakova, VA Dimitriev, Anne Henry and Erik Janzén
  Micropipe healing in liquid phase epitaxial growth of SiC
  Materials Science Forum, Vols. 338-342, 2000.


 Web of Science® Times Cited: 24

Tanja Paskova, Sukkaneste Tungasmita, E Valcheva, EB Svedberg, B Arnaudov, S Evtimova, Per Persson, Anne Henry, R Beccard, M Heuken and Bo Monemar
  Hydride vapour phase homoepitaxial growth of GaN on MOCVD-grown 'templates'
  MRS99 Fall Meeting, 2000.


Mikael Syväjärvi, Rositsa Yakimova, Henrik Jacobsson, MK Linnarsson, Anne Henry and Erik Janzén
  High growth rate epitaxy of thick 4H-SiC layers
  Materials Science Forum, Vols. 338-342, 2000.


 Web of Science® Times Cited: 6

A Ellison, J Zhang, W Magnusson, Anne Henry, Qamar Ul Wahab, Peder Bergman, Carl Hemmingsson, Tien Son Nguyen and Erik Janzén
  Fast SiC epitaxial growth in a chimney CVD reactor and HTCVD crystal growth developments
  Materials science Forum, Vols. 338-342, 2000.


 Web of Science® Times Cited: 29

Ph.D. Theses

Stefano Leone
  Advances in SiC growth using chloride-based CVD
  2010.


  Fulltext PDF

Henrik Pedersen
  Chloride-based Silicon Carbide CVD
  2008.


  Fulltext PDF

Örjan Danielsson
  Simulations of Silicon Carbide Chemical Vapor Deposition
  2002.


  Fulltext PDF

Urban Forsberg
  CVD Growth of Silicon Carbide for High Frequency Applications
  2001.


  Fulltext PDF

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