Publications for Anelia Kakanakova-Gueorguie
Co-author map based on ISI articles 2007-

Keywords

x-ray temperatures temperature sublimation spectroscopy silicon sic schottky hot-wall epitaxy epitaxial electrical defects contacts contact boron annealing annealed aln 4h-sic

Journal Articles

S Schoeche, P Kuehne, T Hofmann, M Schubert, Daniel Nilsson, Anelia Kakanakova-Gueorguie, Erik Janzén and Vanya Darakchieva
  Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect
  Applied Physics Letters, 2013, 103(21), 212107.
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R R Q. Freitas, Gueorgui Kostov Gueorguiev, F de Brito Mota, C M C. de Castilho, Sven Stafström and Anelia Kakanakova-Georgieva
  Reactivity of adducts relevant to the deposition of hexagonal BN from first-principles calculations
  Chemical Physics Letters, 2013, 583, 119-124.

X. T. Trinh, D Nilsson, I. G. Ivanov, E Janzén, A Kakanakova-Georgieva and N.T. Son
  Negative-U behavior of the Si donor in Al0.77Ga0.23N
  Applied Physics Letters, 2013, 103(4), 042101.
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 Web of Science® Times Cited: 2

Anelia Kakanakova-Georgieva, Daniel Nilsson, Xuan Thang Trinh, Urban Forsberg, Son Tien Nguyen and Erik Janzén
  The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN
  Applied Physics Letters, 2013, 102(13), 132113.
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 Web of Science® Times Cited: 3

E. F. de Almeida Junior, F. de Brito Mota, C. M. C. de Castilho, Anelia Kakanakova-Gueorgieva and Gueorgui Kostov Gueorguiev
  Defects in hexagonal-AlN sheets by first-principles calculations
  European Physical Journal B: Condensed Matter Physics, 2012, 85(1), .
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 Web of Science® Times Cited: 7

Anelia Kakanakova-Gueorgieva, Daniel Nilsson and Erik Janzén
  High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures
  Journal of Crystal Growth, 2012, 338(1), 52-56.
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 Web of Science® Times Cited: 6

Anelia Kakanakova-Georgieva, Urban Forsberg and Erik Janzén
  Carbon-tuned cathodoluminescence of semi-insulating GaN
  PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208(9), 2182-2185.
 Web of Science® Times Cited: 4

R J T J T Simms, M J Uren, T Martin, J Powell, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Erik Janzén and M Kuball
  Micro-Raman spectroscopy as a voltage probe in AlGaN/GaN heterostructure devices: Determination of buffer resistances
  SOLID-STATE ELECTRONICS, 2011, 55(1), 5-7.

M. Fagerlind, F. Allerstam, E.O. Sveinbjornsson, N. Rorsman, Anelia Kakanakova-Georgieva, Anders Lundskog, Urban Forsberg and Erik Janzén
  Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors
  Journal of Applied Physics, 2010, 108(1), 014508.
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 Web of Science® Times Cited: 17

Anelia Kakanakova-Georgieva, Daniel Nilsson, M Stattin, Urban Forsberg, Å Haglund, A Larsson and Erik Janzén
  Mg-doped Al0.85Ga0.15N layers grown by hot-wall MOCVD with low resistivity at room temperature
  PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2010, 4(11), 311-313.
 Web of Science® Times Cited: 4

Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Rafal Ciechonski and Erik Janzén
  Improved hot-wall MOCVD growth of highly uniform AlGaN/GaN/HEMT structures
  Journal of Crystal Growth, 2009, 311(10), 3007-3010.
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 Web of Science® Times Cited: 16

Gernot J Riedel, James W Pomeroy, Keith P Hilton, Jessica O Maclean, David J Wallis, Michael J Uren, Trevor Martin, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Galia Pozina, Erik Janzén, Richard Lossy, Reza Pazirandeh, Frank Brunner, Joachim Wuerfl and Martin Kuball
  Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers
  IEEE Electron Device Letters, 2009, 30(2), 103-106.
 Web of Science® Times Cited: 25

Anelia Kakanakova-Georgieva, Rafal Ciechonski, Urban Forsberg, Anders Lundskog and Erik Janzén
  Hot-Wall MOCVD for Highly Efficient and Uniform Growth of AIN
  Crystal Growth & Design, 2009, 9(2), 880-884.
 Web of Science® Times Cited: 20

Galia Pozina, Carl Hemmingsson, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Bo Monemar, Lars Hultman and Erik Janzén
  Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substrate
  Journal of Applied Physics, 2008, 104(11), 113513.
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 Web of Science® Times Cited: 2

Rafal Ciechonski, Anders Lundskog, Urban Forsberg, Anelia Kakanakova-Georgieva, Henrik Pedersen and Erik Janzén
  High 2DEG mobility of HEMT structures grown on 100 mm SI 4H-SiC substrates by hot-wall MOCVD
  Journal of Applied Physics, 2007, , .

Anelia Kakanakova-Georgieva, Per Persson, A. Kasic, Lars Hultman and Erik Janzén
  Superior material properties of AlN on vicinal 4H-SiC
  Journal of Applied Physics, 2006, 100(3), .
 Web of Science® Times Cited: 2

Anelia Kakanakova-Georgieva, Gueorgui Kostov Gueorguiev, Sven Stafström, Lars Hultman and Erik Janzén
  AlGaInN metal-organic-chemical-vapor-deposition gas-phase chemistry in hydrogen and nitrogen diluents: First-principles calculations
  Chemical Physics Letters, 2006, 431(4-6), 346-351.
 Web of Science® Times Cited: 7

Rositsa Yakimova, Anelia Kakanakova-Georgieva, Gholamreza R. Yazdi, Gueorgui K. Gueorguiev and Mikael Syväjärvi
  Sublimation growth of AlN crystals: Growth mode and structure evolution
  Journal of Crystal Growth, 2005, 281(1), 81-86.
 Web of Science® Times Cited: 16

Milena Beshkova, Z. Zakhariev, M.V. Abrashev, Jens Birch, Anelia Kakanakova-Georgieva and Rositsa Yakimova
  Low-pressure sublimation epitaxy of AlN films - growth and characterization
  Vacuum, 2004, 76, 143-146.
 Web of Science® Times Cited: 4

Anelia Kakanakova-Georgieva, Per Persson, Rositsa Yakimova, Lars Hultman and Erik Janzén
  Sublimation epitaxy of AlN on SiC: Growth morphology and structural features
  Journal of Crystal Growth, 2004, 273(1-2), 161-166.
 Web of Science® Times Cited: 8

Anelia Kakanakova-Georgieva, Gueorgui Kostov Gueorguiev, Rositsa Yakimova and Erik Janzén
  Effect of impurity incorporation on crystallization in AlN sublimation epitaxy
  Journal of Applied Physics, 2004, 96(9), 5293-5297.
 Web of Science® Times Cited: 1

Milena Beshkova, Z Zakhariev, Jens Birch, Anelia Kakanakova-Georgieva and Rositsa Yakimova
  Sublimation epitaxy of AIN layers on 4H-SiC depending on the type of crucible
  Journal of materials science. Materials in electronics, 2003, 14(10-12), 767-768.
 Web of Science® Times Cited: 3

H. Jacobson, Rositsa Yakimova, Mikael Syväjärvi, Anelia Kakanakova-Georgieva, T. Tuomi and Erik Janzén
  Structural impact of LPE buffer layer on sublimation grown 4H-SiC epilayers
  Journal of Crystal Growth, 2003, 256(3-4), 276-282.
 Web of Science® Times Cited: 4

Rafal Ciechonski, Mikael Syväjärvi, Anelia Kakanakova-Georgieva and Rositsa Yakimova
  Effect of boron on the resistivity of compensated 4H-SiC
  Journal of electronic materials, 2003, 32(5), 452-457.
 Web of Science® Times Cited: 2

Anelia Kakanakova-Georgieva, Rositsa Yakimova, Anne Henry, M.K. Linnarsson, Mikael Syväjärvi and Erik Janzén
  Cathodoluminescence identification of donor-acceptor related emissions in as-grown 4H-SiC layers
  Journal of Applied Physics, 2002, 91(5), 2890-2895.
 Web of Science® Times Cited: 18

Anelia Kakanakova-Georgieva, Rositsa Yakimova, M.K. Linnarsson and Erik Janzén
  Site-occupying behavior of boron in compensated p-type 4H-SiC grown by sublimation epitaxy
  Journal of Applied Physics, 2002, 91(5), 3471-3473.
 Web of Science® Times Cited: 7

N. Nordell, O. Bowallius, S. Anand, Anelia Kakanakova-Georgieva, Rositsa Yakimova, L.D. Madsen, S. Karlsson and A.O. Konstantinov
  Polytype homogeneity and doping distribution in homoepitaxial 4H SiC grown on nonplanar substrates
  Applied Physics Letters, 2002, 80(10), 1755.
 Web of Science® Times Cited: 8

Anelia Kakanakova-Georgieva, Rositsa Yakimova, G.K. Gueorguiev, M.K. Linnarsson, Mikael Syväjärvi and Erik Janzén
  Kinetics of residual doping in 4H-SiC epitaxial layers grown in vacuum
  Journal of Crystal Growth, 2002, 240(3-4), 501-507.
 Web of Science® Times Cited: 1

P Stefanov, D Stoychev, I Valov, Anelia Kakanakova-Georgieva and Ts Marinova
  Electrochemical deposition of thin zirconia films on stainless steel 316 L
  Materials Chemistry and Physics, 2000, 65(2), 222-225.

A Toneva, E Goranova, G Beshkov, T Marinova and Anelia Kakanakova-Georgieva
  FeSi2 thin films investigated by X-ray photoelectron and infrared spectroscopy
  Vacuum, 2000, 58(2-3), 420-427.

Daniela Gogova, K Gesheva, Anelia Kakanakova-Georgieva and M Surtchev
  Investigation of the structure of tungsten oxide films obtained by chemical vapor deposition
  European Physical Journal: Applied physics, 2000, 11(3), 167-174.
 Web of Science® Times Cited: 17

Anelia Kakanakova-Georgieva, Ts. Marinova, O. Noblanc, C. Arnodo, S. Cassette and C. Brylinski
  XPS characterization of tungsten based contact layers on 4H-SiC
  Thin Solid Films, 1999, 337(1-2), 180-183.

Anelia Kakanakova-Georgieva, Ts. Marinova, O. Noblanc, C. Arnodo, S. Cassette and C. Brylinski
  Characterization of ohmic and Schottky contacts on SiC
  Thin Solid Films, 1999, 343-344, 637-641.

Anelia Kakanakova-Georgieva, L Kassamakova, Ts. Marinova, R. Kakanakov, O. Noblanc, C. Arnodo, S. Cassette and C. Brylinski
  Interface chemistry of WN/4H-SiC structures
  Applied Surface Science, 1999, 151(3-4), 225-232.

Anelia Kakanakova-Georgieva, E.P. Trifonova, Rositsa Yakimova, M.F. MacMillan and Erik Janzén
  Microhardness of 6H-SiC epitaxial layers grown by sublimation
  Crystal research and technology (1981), 1999, 34(8), 943-947.

M Sendova-Vassileva, D Dimova-Malinovska, M Kamenova, Anelia Kakanakova-Georgieva and Ts Marinova
  Depth dependence of photoluminescence and chemical bonding in porous silicon
  Journal of Luminescence, 1999, 80(1-4), 179-182.

Mikael Syväjärvi, Rositsa Yakimova, M Tuominen, Anelia Kakanakova-Georgieva, M F Macmillan, Anne Henry, Qamar Ul Wahab and Erik Janzén
  Growth of 6H and 4H-SiC by sublimation epitaxy
  Journal of Crystal Growth, 1999, 197(1-2), 155-162.

Mikael Syväjärvi, Rositsa Yakimova, Anelia Kakanakova-Georgieva, M.F MacMillan and Erik Janzén
  Kinetics and morphological stability in sublimation growth of 6H and 4H-SiC epitaxial layers
  Materials Science and Engineering: B, 1999, 61-62, 161-164.

L Kassamakova, R Kakanakov, N Nordell, S Savage, Anelia Kakanakova-Georgieva and Ts Marinova
  Study of the electrical, thermal and chemical properties of Pd ohmic contacts to p-type 4H-SiC: dependence on annealing conditions
  Materials Science and Engineering: B, 1999, 61-62, 291-295.

L. Kassamakova, Anelia Kakanakova-Georgieva, R. Kakanakov, Ts. Marinova, I. Kassamakov, Tz. Djambova, O. Noblanc, C. Arondo, S. Cassette and C. Brylinski
  Thermostable Ti/Au/Pt/Ti Schottky contacts on n-type 4H-SiC
  Semiconductor Science and Technology, 1998, 13(9), 1025-1030.

M. Tuominen, Rositsa Yakimova, Anelia Kakanakova-Georgieva, M.F. MacMillan, Mikael Syväjärvi and Erik Janzén
  Investigation of domain evolution in sublimation epitaxy of SiC
  Journal of Crystal Growth, 1998, 193(1-2), 101-108.

Ts. Marinova, Anelia Kakanakova-Georgieva, M. Kalitzova, G. Vitali, C. Pizzuto and G. Zollo
  XPS depth profiling of laser-annealed Zn+-implanted GaAs
  Applied Surface Science, 1997, 109/110, 80-86.

Anelia Kakanakova-Georgieva, Ts. Marinova, O. Noblanc, C. Arondo, S. Cassette and C. Brylinski
  Interface chemistry of a Ti/ Au/ Pt/ Ti/ SiC structure
  Applied Surface Science, 1997, 121/122, 208-212.

Ts. Marinova, Anelia Kakanakova-Georgieva, V. Krastev, R. Kakanakov, M. Neshev, L. Kassamakova, O. Noblanc, C. Arondo, S. Cassette, C. Brylinski, B. Pecz, G. Radnoczi and G. Vincze
  Nickel based ohmic contacts on SiC
  Materials Science and Engineering B, 1997, 46(1-3), 223-226.

Christer Hallin, Rositsa Yakimova, B. Pecz, Anelia Kakanakova-Georgieva, Ts. Marinova, L. Kassamakova, R. Kakanakov and Erik Janzén
  Improved Ni ohmic contact on n-type 4H-SiC
  Journal of Electronic Materials, 1997, 26(3), 119-122.

Anelia Kakanakova-Georgieva, T. Paskova, Rositsa Yakimova, Christer Hallin, Mikael Syväjärvi, E.P. Trifonova, M. Surtchev and Erik Janzén
  Structural properties of 6H-SiC epilayers grown by two different techniques
  Materials Science and Engineering B, 1997, 46(1-3), 345-348.

Conference Articles

Anelia Kakanakova-Gueorguie, Daniel Nilsson, Xuan Thang Trinh, Nguyen Tien Son and Erik Janzén
  Silicon and oxygen in high-Al-content AlGaN: incorporation kinetics and electron paramagnetic resonance study
  Gettering and Defect Engineering in Semiconductor Technology XV, 2014.


Anne Henry, Anders Lundskog, Justinas Palisaitis, Ivan Ivanov, Anelia Kakanakova-Georgieva, Urban Forsberg, Per Persson and Erik Janzén
  AlGaN Multiple Quantum Wells and AlN Grown in a Hot-wall MOCVD for Deep UV Applications
  ECS Transactions, Vol. 25, Iss. 8, 2009.


Galia Pozina, Carl Hemmingsson, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Ivan Gueorguiev Ivanov, Bo Monemar, Lars Hultman and Erik Janzén
  Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4- SiC substrate
  8th International Conference on Physics of Light-Matter Coupling in Nanostructures,2008, 2008.


Anders Lundskog, Urban Forsberg, Anelia Kakanakova-Georgieva, Rafal Ciechonski, Ivan Gueorguiev Ivanov, Vanya Darakchieva, Erik Janzén, M. Fagerlind, J-Y. Shiu and N. Rorsman
  Highly Uniform Hot-Wall MOCVD Growth of High-Quality AlGaN/GaN HEMT-Structures on 100 mm Semi-Insulating 4H-SiC Substrates
  ICNS-7,2007, 2007.


Anelia Kakanakova-Georgieva, Urban Forsberg, Ivan Gueorguiev Ivanov and Erik Janzén
  Uniform hot-wall MOCVD epitaxial growth of 2 inch AlGaN/GaN HEMT structures
  Journal of Crystal Growth, Vol. 300, 2007.


 Web of Science® Times Cited: 15

T. Malinauskas, R. Aleksiejunas, K. Jarasiunas, B. Beaumont, P. Gibart, Anelia Kakanakova-Georgieva, Erik Janzén, Daniela Gogova, Bo Monemar and M. Heuken
  All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE- grown GaN
  Journal of Crystal Growth, Vol. 300, 2007.


 Web of Science® Times Cited: 28

Mikael Syväjärvi, Anelia Kakanakova-Georgieva, Gholamreza Yazdi, Urban Forsberg and Erik Janzén
  A surface study of wet etched AlGaN epilayers grown by hot-wall MOCVD
  Journal of Crystal Growth, Vol. 300, 2007.


 Web of Science® Times Cited: 1

Urban Forsberg, Anelia Kakanakova-Georgieva, Ivan Gueorguiev Ivanov and Erik Janzén
  Hot-wall MOCVD growth and characterization of III-nitrides for HEMT application
  WOCSDICE 2006,2006, 2006.


Anelia Kakanakova-Georgieva, Urban Forsberg, Ivan Gueorguiev Ivanov and Erik Janzén
  Hot-wall MOCVD developments towards 2 inch AlGaN/GaN epitaxial growth
  ICMOVPE2006,2006, 2006.


Anelia Kakanakova-Georgieva, Ivan Gueorguiev Ivanov, Christer Hallin and Erik Janzén
  Hot-wall MOCVD grown homoepitaxial GaN layers with intense intrinsic excitonic structure
  Phys. Stat. Sol. (a), Vol. 202, 2005.


K. Jarasiunas, T. Malinauskas, A. Kadys, R. Aleksiejunas, M. Sudzius, S. Miasojedovas, S. Jursenas, A. Zukauskas, D Gogova, Anelia Kakanakova-Georgieva, Erik Janzén, Henrik Larsson, Bo Monemar, P. Gibart and B. Beaumont
  Application of picosecond four-wave mixing and photoluminescence techniques for investigation of carrier dynamics in bulk crystals and heterostructures of GaN
  phys. stat. sol. c, Vol. 2, 2005.


Anelia Kakanakova-Georgieva, A. Kasic, Christer Hallin, Bo Monemar and Erik Janzén
  Performance of III-nitride epitaxy in a low V-to-III gas-flow ratio range under nitrogen ambient in a hot-wall MOCVD system
  Phys. Stat. Sol. (c), Vol. 2, 2005.


Erik Janzén, Peder Bergman, Örjan Danielsson, Urban Forsberg, Christer Hallin, Jawad ul-Hassan, Anne Henry, Ivan Gueorguiev Ivanov, Anelia Kakanakova-Gueorguie, Per Persson and Qamar Ul Wahab
  SiC and III-nitride Growth in a Hot-wall CVD Reactor
  Materials Science Forum, ISSN 0255-5476, volume 483-485, 2005.


 Web of Science® Times Cited: 6

Christer Hallin, Anelia Kakanakova-Georgieva, Per Persson and Erik Janzén
  High quality 6H-SiC (0001) homoepitaxial layers as substrate surface for growth of AlN epitaxial layers
  physica status solidi C, Vol. 2, 2005.


Anelia Kakanakova-Georgieva, Christer Hallin, Ivan Gueorguiev Ivanov and Erik Janzén
  AlGaN/GaN epitaxial growth on SiC in a hot-wall MOCVD system
  European Microwave Week,2004, 2004.


R. Aleksiejunas, K. Jarasiunas, Anelia Kakanakova-Georgieva and Erik Janzén
  Characterization of GaN/SiC epilayers by picosecond four-wave mixing technique
  Physica Scripta, Vol. T114, 2004.


Milena Beshkova, Z Zakhariev, Jens Birch, Anelia Kakanakova-Georgieva and Rositsa Yakimova
  Properties of AlN layers grown by sublimation epitaxy
  Materials Science Forum, Vols. 433-436, 2003.


L Kasamakova-Kolaklieva, Rositsa Yakimova, R Kakanakov, Anelia Kakanakova-Georgieva, Mikael Syväjärvi and Erik Janzén
  Characteristics of Ni Schottky contacts on compensated 4H-SiC layers
  Materials Science Forum, Vols. 433-436, 2003.


Mikael Syväjärvi, Rositsa Yakimova, Rafal Ciechonski, Anelia Kakanakova-Georgieva, Liutauras Storasta and Erik Janzén
  Deep levels in 4H-SiC layers grown by sublimation epitaxy
  Optical Materials, Vol. 23, 2003.


 Web of Science® Times Cited: 1

Anelia Kakanakova-Georgieva, P.O.A. Persson, Urban Forsberg, Jens Birch, Lars Hultman and Erik Janzén
  Epitaxial growth of AlN layers on SiC substrates in a hot-wall MOCVD system
  Phys. Stat. Sol. (c), Vol. 0, Issue 1, 2002.


Anelia Kakanakova-Georgieva, Urban Forsberg, Björn Magnusson, Rositsa Yakimova and Erik Janzén
  Growth of AlN films by hot-wall CVD and sublimation techniques: Effect of growth cell pressure
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 1

L Kassamakova, R Kakanakov, Rositsa Yakimova, Anelia Kakanakova-Georgieva, Mikael Syväjärvi, Lars Wilzén and Erik Janzén
  Effect of temperature treatment on Au/Pd Schottky contacts to 4H-SiC
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 1

Rositsa Yakimova, H Jacobson, Mikael Syväjärvi, Anelia Kakanakova-Georgieva, Tihomir Iakimov, Chariya Virojanadara, Leif Johansson and Erik Janzén
  Impact of the initial surface conditions on defect appearance in 4H-SiC epilayers
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 5

Anelia Kakanakova-Georgieva, Rositsa Yakimova, J Zhang, Liutauras Storasta, Mikael Syväjärvi and Erik Janzén
  Characteristics of boron in 4H-SiC layers produced by high-temperature techniques
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 5

Mikael Syväjärvi, Rositsa Yakimova, Anelia Kakanakova-Georgieva, S.G. Sridhara, M.K. Linnarsson and Erik Janzén
  Study of nitrogen, aluminium and boron incorporation in SiC layers grown by sublimation epitaxy
  J. Cryst. Growth, Vols. 237-239, 2002.


 Web of Science® Times Cited: 6

Rositsa Yakimova, Tihomir Iakimov, Anelia Kakanakova-Gueorguie, Mikael Syväjärvi, Henrik Jacobson, Chariya Virojanadara, Leif Johansson and Erik Janzén
  Effect of High Temperature Annealing on Surface and Bulk Characteristics of 4H-SiC
  <em>Proc. of the 43rd Electronic Material Conference</em>, 2001.


Mikael Syväjärvi, Rositsa Yakimova, Anne Henry, Anelia Kakanakova-Georgieva, M Linnarsson and Erik Janzén
  Optical properties of aluminium and nitrogen in compensated 4H-SiC epitaxial layers
  Materials Research Society Symposium Proceedings, Vol. 640, 2001.


Rositsa Yakimova, Mikael Syväjärvi, H Jacobsson, Anelia Kakanakova-Georgieva, S Rendakova, V Dmitriev and Erik Janzén
  Defect evolution in SiC sublimation epitaxy layers grown on LPE buffers with reduced micropipe density
  Materials Research Society Symposium Proceedings, Vol. 640, 2001.


Rositsa Yakimova, Mikael Syväjärvi, Anelia Kakanakova-Georgieva and Erik Janzén
  Stress related morphological defects in SiC epitaxial layers
  Diam. Relat. Mater., Vol. 10, 2001.


 Web of Science® Times Cited: 2

Rositsa Yakimova, Mikael Syväjärvi, Tihomir Iakimov, Henrik Jacobsson, Anelia Kakanakova-Georgieva, P. Raback and Erik Janzén
  Growth of silicon carbide: Process-related defects
  Appl. Surf. Sci., Vol. 184, 2001.


 Web of Science® Times Cited: 11

Anelia Kakanakova-Georgieva, Rositsa Yakimova, Mikael Syväjärvi and Erik Janzén
  Behavior of background impurities in thick 4H-SiC epitaxial layers
  Appl. Surf. Sci., Vol. 184, 2001.


 Web of Science® Times Cited: 4

Ph.D. Theses

Daniel Nilsson
  Doping of high-Al-content AlGaN grown by MOCVD
  2014.


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