Publications for Anelia Kakanakova-Gueorguie
Co-author map based on ISI articles 2007-
Journal Articles
Anelia Kakanakova-Georgieva, Daniel Nilsson, Xuan Thang Trinh, Urban Forsberg, Son Tien Nguyen and Erik Janzén
The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN
Applied Physics Letters, 2013, 102(13), 132113.
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E. F. de Almeida Junior, F. de Brito Mota, C. M. C. de Castilho, Anelia Kakanakova-Gueorgieva and Gueorgui Kostov Gueorguiev
Defects in hexagonal-AlN sheets by first-principles calculations
European Physical Journal B, 2012, 85(1), .
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Anelia Kakanakova-Gueorgieva, Daniel Nilsson and Erik Janzén
High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures
Journal of Crystal Growth, 2012, 338(1), 52-56.
Fulltext Web of Science® Times Cited: 2 |
Anelia Kakanakova-Georgieva, Urban Forsberg and Erik Janzén
Carbon-tuned cathodoluminescence of semi-insulating GaN
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208(9), 2182-2185.
Web of Science® Times Cited: 2 |
R J T J T Simms, M J Uren, T Martin, J Powell, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Erik Janzén and M Kuball
Micro-Raman spectroscopy as a voltage probe in AlGaN/GaN heterostructure devices: Determination of buffer resistances
SOLID-STATE ELECTRONICS, 2011, 55(1), 5-7.
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Anelia Kakanakova-Georgieva, Daniel Nilsson, M Stattin, Urban Forsberg, Å Haglund, A Larsson and Erik Janzén
Mg-doped Al0.85Ga0.15N layers grown by hot-wall MOCVD with low resistivity at room temperature
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2010, 4(11), 311-313.
Web of Science® Times Cited: 2 |
M. Fagerlind, F. Allerstam, E.O. Sveinbjornsson, N. Rorsman, Anelia Kakanakova-Georgieva, Anders Lundskog, Urban Forsberg and Erik Janzén
Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors
Journal of Applied Physics, 2010, 108(1), 014508.
Fulltext Web of Science® Times Cited: 7 |
Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Rafal Ciechonski and Erik Janzén
Improved hot-wall MOCVD growth of highly uniform AlGaN/GaN/HEMT structures
Journal of Crystal Growth, 2009, 311(10), 3007-3010.
Fulltext Web of Science® Times Cited: 11 |
Anelia Kakanakova-Georgieva, Rafal Ciechonski, Urban Forsberg, Anders Lundskog and Erik Janzén
Hot-Wall MOCVD for Highly Efficient and Uniform Growth of AIN
Crystal Growth & Design, 2009, 9(2), 880-884.
Web of Science® Times Cited: 11 |
Gernot J Riedel, James W Pomeroy, Keith P Hilton, Jessica O Maclean, David J Wallis, Michael J Uren, Trevor Martin, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Galia Pozina, Erik Janzén, Richard Lossy, Reza Pazirandeh, Frank Brunner, Joachim Wuerfl and Martin Kuball
Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers
IEEE Electron Device Letters, 2009, 30(2), 103-106.
Web of Science® Times Cited: 15 |
Galia Pozina, Carl Hemmingsson, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Bo Monemar, Lars Hultman and Erik Janzén
Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substrate
Journal of Applied Physics, 2008, 104(11), 113513.
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Rafal Ciechonski, Anders Lundskog, Urban Forsberg, Anelia Kakanakova-Georgieva, Henrik Pedersen and Erik Janzén
High 2DEG mobility of HEMT structures grown on 100 mm SI 4H-SiC substrates by hot-wall MOCVD
Journal of Applied Physics, 2007, , .
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Anelia Kakanakova-Georgieva, Per Persson, A. Kasic, Lars Hultman and Erik Janzén
Superior material properties of AlN on vicinal 4H-SiC
Journal of Applied Physics, 2006, 100(3), .
Web of Science® Times Cited: 2 |
Anelia Kakanakova-Georgieva, Gueorgui Kostov Gueorguiev, Sven Stafström, Lars Hultman and Erik Janzén
AlGaInN metal-organic-chemical-vapor-deposition gas-phase chemistry in hydrogen and nitrogen diluents: First-principles calculations
Chemical Physics Letters, 2006, 431(4-6), 346-351.
Web of Science® Times Cited: 4 |
Rositsa Yakimova, Anelia Kakanakova-Georgieva, Gholamreza R. Yazdi, Gueorgui K. Gueorguiev and Mikael Syväjärvi
Sublimation growth of AlN crystals: Growth mode and structure evolution
Journal of Crystal Growth, 2005, 281(1), 81-86.
Web of Science® Times Cited: 15 |
Milena Beshkova, Z. Zakhariev, M.V. Abrashev, Jens Birch, Anelia Kakanakova-Georgieva and Rositsa Yakimova
Low-pressure sublimation epitaxy of AlN films - growth and characterization
Vacuum, 2004, 76, 143-146.
Web of Science® Times Cited: 4 |
Anelia Kakanakova-Georgieva, Per Persson, Rositsa Yakimova, Lars Hultman and Erik Janzén
Sublimation epitaxy of AlN on SiC: Growth morphology and structural features
Journal of Crystal Growth, 2004, 273(1-2), 161-166.
Web of Science® Times Cited: 8 |
Anelia Kakanakova-Georgieva, Gueorgui Kostov Gueorguiev, Rositsa Yakimova and Erik Janzén
Effect of impurity incorporation on crystallization in AlN sublimation epitaxy
Journal of Applied Physics, 2004, 96(9), 5293-5297.
Web of Science® Times Cited: 1 |
Milena Beshkova, Z Zakhariev, Jens Birch, Anelia Kakanakova-Georgieva and Rositsa Yakimova
Sublimation epitaxy of AIN layers on 4H-SiC depending on the type of crucible
Journal of materials science. Materials in electronics, 2003, 14(10-12), 767-768.
Web of Science® Times Cited: 2 |
H. Jacobson, Rositsa Yakimova, Mikael Syväjärvi, Anelia Kakanakova-Georgieva, T. Tuomi and Erik Janzén
Structural impact of LPE buffer layer on sublimation grown 4H-SiC epilayers
Journal of Crystal Growth, 2003, 256(3-4), 276-282.
Web of Science® Times Cited: 4 |
Rafal Ciechonski, Mikael Syväjärvi, Anelia Kakanakova-Georgieva and Rositsa Yakimova
Effect of boron on the resistivity of compensated 4H-SiC
Journal of electronic materials, 2003, 32(5), 452-457.
Web of Science® Times Cited: 1 |
Anelia Kakanakova-Georgieva, Rositsa Yakimova, Anne Henry, M.K. Linnarsson, Mikael Syväjärvi and Erik Janzén
Cathodoluminescence identification of donor-acceptor related emissions in as-grown 4H-SiC layers
Journal of Applied Physics, 2002, 91(5), 2890-2895.
Web of Science® Times Cited: 17 |
Anelia Kakanakova-Georgieva, Rositsa Yakimova, M.K. Linnarsson and Erik Janzén
Site-occupying behavior of boron in compensated p-type 4H-SiC grown by sublimation epitaxy
Journal of Applied Physics, 2002, 91(5), 3471-3473.
Web of Science® Times Cited: 6 |
N. Nordell, O. Bowallius, S. Anand, Anelia Kakanakova-Georgieva, Rositsa Yakimova, L.D. Madsen, S. Karlsson and A.O. Konstantinov
Polytype homogeneity and doping distribution in homoepitaxial 4H SiC grown on nonplanar substrates
Applied Physics Letters, 2002, 80(10), 1755.
Web of Science® Times Cited: 8 |
Anelia Kakanakova-Georgieva, Rositsa Yakimova, G.K. Gueorguiev, M.K. Linnarsson, Mikael Syväjärvi and Erik Janzén
Kinetics of residual doping in 4H-SiC epitaxial layers grown in vacuum
Journal of Crystal Growth, 2002, 240(3-4), 501-507.
Web of Science® Times Cited: 1 |
P Stefanov, D Stoychev, I Valov, Anelia Kakanakova-Georgieva and Ts Marinova
Electrochemical deposition of thin zirconia films on stainless steel 316 L
Materials Chemistry and Physics, 2000, 65(2), 222-225.
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A Toneva, E Goranova, G Beshkov, T Marinova and Anelia Kakanakova-Georgieva
FeSi2 thin films investigated by X-ray photoelectron and infrared spectroscopy
Vacuum, 2000, 58(2-3), 420-427.
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Daniela Gogova, K Gesheva, Anelia Kakanakova-Georgieva and M Surtchev
Investigation of the structure of tungsten oxide films obtained by chemical vapor deposition
European Physical Journal, 2000, 11(3), 167-174.
Web of Science® Times Cited: 16 |
Anelia Kakanakova-Georgieva, Ts. Marinova, O. Noblanc, C. Arnodo, S. Cassette and C. Brylinski
XPS characterization of tungsten based contact layers on 4H-SiC
Thin Solid Films, 1999, 337(1-2), 180-183.
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Anelia Kakanakova-Georgieva, Ts. Marinova, O. Noblanc, C. Arnodo, S. Cassette and C. Brylinski
Characterization of ohmic and Schottky contacts on SiC
Thin Solid Films, 1999, 343-344, 637-641.
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Anelia Kakanakova-Georgieva, L Kassamakova, Ts. Marinova, R. Kakanakov, O. Noblanc, C. Arnodo, S. Cassette and C. Brylinski
Interface chemistry of WN/4H-SiC structures
Applied Surface Science, 1999, 151(3-4), 225-232.
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Anelia Kakanakova-Georgieva, E.P. Trifonova, Rositsa Yakimova, M.F. MacMillan and Erik Janzén
Microhardness of 6H-SiC epitaxial layers grown by sublimation
Crystal research and technology (1981), 1999, 34(8), 943-947.
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M Sendova-Vassileva, D Dimova-Malinovska, M Kamenova, Anelia Kakanakova-Georgieva and Ts Marinova
Depth dependence of photoluminescence and chemical bonding in porous silicon
Journal of Luminescence, 1999, 80(1-4), 179-182.
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Mikael Syväjärvi, Rositsa Yakimova, M Tuominen, Anelia Kakanakova-Georgieva, M F Macmillan, Anne Henry, Qamar Ul Wahab and Erik Janzén
Growth of 6H and 4H-SiC by sublimation epitaxy
Journal of Crystal Growth, 1999, 197(1-2), 155-162.
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Mikael Syväjärvi, Rositsa Yakimova, Anelia Kakanakova-Georgieva, M.F MacMillan and Erik Janzén
Kinetics and morphological stability in sublimation growth of 6H and 4H-SiC epitaxial layers
Materials Science and Engineering: B, 1999, 61-62, 161-164.
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L Kassamakova, R Kakanakov, N Nordell, S Savage, Anelia Kakanakova-Georgieva and Ts Marinova
Study of the electrical, thermal and chemical properties of Pd ohmic contacts to p-type 4H-SiC: dependence on annealing conditions
Materials Science and Engineering: B, 1999, 61-62, 291-295.
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L. Kassamakova, Anelia Kakanakova-Georgieva, R. Kakanakov, Ts. Marinova, I. Kassamakov, Tz. Djambova, O. Noblanc, C. Arondo, S. Cassette and C. Brylinski
Thermostable Ti/Au/Pt/Ti Schottky contacts on n-type 4H-SiC
Semiconductor Science and Technology, 1998, 13(9), 1025-1030.
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M. Tuominen, Rositsa Yakimova, Anelia Kakanakova-Georgieva, M.F. MacMillan, Mikael Syväjärvi and Erik Janzén
Investigation of domain evolution in sublimation epitaxy of SiC
Journal of Crystal Growth, 1998, 193(1-2), 101-108.
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Ts. Marinova, Anelia Kakanakova-Georgieva, M. Kalitzova, G. Vitali, C. Pizzuto and G. Zollo
XPS depth profiling of laser-annealed Zn+-implanted GaAs
Applied Surface Science, 1997, 109/110, 80-86.
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Anelia Kakanakova-Georgieva, Ts. Marinova, O. Noblanc, C. Arondo, S. Cassette and C. Brylinski
Interface chemistry of a Ti/ Au/ Pt/ Ti/ SiC structure
Applied Surface Science, 1997, 121/122, 208-212.
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Ts. Marinova, Anelia Kakanakova-Georgieva, V. Krastev, R. Kakanakov, M. Neshev, L. Kassamakova, O. Noblanc, C. Arondo, S. Cassette, C. Brylinski, B. Pecz, G. Radnoczi and G. Vincze
Nickel based ohmic contacts on SiC
Materials Science and Engineering B, 1997, 46(1-3), 223-226.
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Christer Hallin, Rositsa Yakimova, B. Pecz, Anelia Kakanakova-Georgieva, Ts. Marinova, L. Kassamakova, R. Kakanakov and Erik Janzén
Improved Ni ohmic contact on n-type 4H-SiC
Journal of Electronic Materials, 1997, 26(3), 119-122.
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Anelia Kakanakova-Georgieva, T. Paskova, Rositsa Yakimova, Christer Hallin, Mikael Syväjärvi, E.P. Trifonova, M. Surtchev and Erik Janzén
Structural properties of 6H-SiC epilayers grown by two different techniques
Materials Science and Engineering B, 1997, 46(1-3), 345-348.
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Conference Articles
Anne Henry, Anders Lundskog, Justinas Palisaitis, Ivan Ivanov, Anelia Kakanakova-Georgieva, Urban Forsberg, Per Persson and Erik Janzén
AlGaN Multiple Quantum Wells and AlN Grown in a Hot-wall MOCVD for Deep UV Applications
ECS Transactions, Vol. 25, Iss. 8, 2009.
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Galia Pozina, Carl Hemmingsson, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Ivan Gueorguiev Ivanov, Bo Monemar, Lars Hultman and Erik Janzén
Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4- SiC substrate
8th International Conference on Physics of Light-Matter Coupling in Nanostructures,2008, 2008.
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Anders Lundskog, Urban Forsberg, Anelia Kakanakova-Georgieva, Rafal Ciechonski, Ivan Gueorguiev Ivanov, Vanya Darakchieva, Erik Janzén, M. Fagerlind, J-Y. Shiu and N. Rorsman
Highly Uniform Hot-Wall MOCVD Growth of High-Quality AlGaN/GaN HEMT-Structures on 100 mm Semi-Insulating 4H-SiC Substrates
ICNS-7,2007, 2007.
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Anelia Kakanakova-Georgieva, Urban Forsberg, Ivan Gueorguiev Ivanov and Erik Janzén
Uniform hot-wall MOCVD epitaxial growth of 2 inch AlGaN/GaN HEMT structures
Journal of Crystal Growth, Vol. 300, 2007.
Web of Science® Times Cited: 14
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T. Malinauskas, R. Aleksiejunas, K. Jarasiunas, B. Beaumont, P. Gibart, Anelia Kakanakova-Georgieva, Erik Janzén, Daniela Gogova, Bo Monemar and M. Heuken
All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE- grown GaN
Journal of Crystal Growth, Vol. 300, 2007.
Web of Science® Times Cited: 25
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Mikael Syväjärvi, Anelia Kakanakova-Georgieva, Gholamreza Yazdi, Urban Forsberg and Erik Janzén
A surface study of wet etched AlGaN epilayers grown by hot-wall MOCVD
Journal of Crystal Growth, Vol. 300, 2007.
Web of Science® Times Cited: 1
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Urban Forsberg, Anelia Kakanakova-Georgieva, Ivan Gueorguiev Ivanov and Erik Janzén
Hot-wall MOCVD growth and characterization of III-nitrides for HEMT application
WOCSDICE 2006,2006, 2006.
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Anelia Kakanakova-Georgieva, Urban Forsberg, Ivan Gueorguiev Ivanov and Erik Janzén
Hot-wall MOCVD developments towards 2 inch AlGaN/GaN epitaxial growth
ICMOVPE2006,2006, 2006.
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Anelia Kakanakova-Georgieva, Ivan Gueorguiev Ivanov, Christer Hallin and Erik Janzén
Hot-wall MOCVD grown homoepitaxial GaN layers with intense intrinsic excitonic structure
Phys. Stat. Sol. (a), Vol. 202, 2005.
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K. Jarasiunas, T. Malinauskas, A. Kadys, R. Aleksiejunas, M. Sudzius, S. Miasojedovas, S. Jursenas, A. Zukauskas, D Gogova, Anelia Kakanakova-Georgieva, Erik Janzén, Henrik Larsson, Bo Monemar, P. Gibart and B. Beaumont
Application of picosecond four-wave mixing and photoluminescence techniques for investigation of carrier dynamics in bulk crystals and heterostructures of GaN
phys. stat. sol. c, Vol. 2, 2005.
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Anelia Kakanakova-Georgieva, A. Kasic, Christer Hallin, Bo Monemar and Erik Janzén
Performance of III-nitride epitaxy in a low V-to-III gas-flow ratio range under nitrogen ambient in a hot-wall MOCVD system
Phys. Stat. Sol. (c), Vol. 2, 2005.
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Erik Janzén, Peder Bergman, Örjan Danielsson, Urban Forsberg, Christer Hallin, Jawad ul-Hassan, Anne Henry, Ivan Gueorguiev Ivanov, Anelia Kakanakova-Gueorguie, Per Persson and Qamar Ul Wahab
SiC and III-nitride Growth in a Hot-wall CVD Reactor
Materials Science Forum, ISSN 0255-5476, volume 483-485, 2005.
Web of Science® Times Cited: 5
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Christer Hallin, Anelia Kakanakova-Georgieva, Per Persson and Erik Janzén
High quality 6H-SiC (0001) homoepitaxial layers as substrate surface for growth of AlN epitaxial layers
physica status solidi C, Vol. 2, 2005.
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Anelia Kakanakova-Georgieva, Christer Hallin, Ivan Gueorguiev Ivanov and Erik Janzén
AlGaN/GaN epitaxial growth on SiC in a hot-wall MOCVD system
European Microwave Week,2004, 2004.
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R. Aleksiejunas, K. Jarasiunas, Anelia Kakanakova-Georgieva and Erik Janzén
Characterization of GaN/SiC epilayers by picosecond four-wave mixing technique
Physica Scripta, Vol. T114, 2004.
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Milena Beshkova, Z Zakhariev, Jens Birch, Anelia Kakanakova-Georgieva and Rositsa Yakimova
Properties of AlN layers grown by sublimation epitaxy
Materials Science Forum, Vols. 433-436, 2003.
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L Kasamakova-Kolaklieva, Rositsa Yakimova, R Kakanakov, Anelia Kakanakova-Georgieva, Mikael Syväjärvi and Erik Janzén
Characteristics of Ni Schottky contacts on compensated 4H-SiC layers
Materials Science Forum, Vols. 433-436, 2003.
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Mikael Syväjärvi, Rositsa Yakimova, Rafal Ciechonski, Anelia Kakanakova-Georgieva, Liutauras Storasta and Erik Janzén
Deep levels in 4H-SiC layers grown by sublimation epitaxy
Optical Materials, Vol. 23, 2003.
Web of Science® Times Cited: 1
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Anelia Kakanakova-Georgieva, P.O.A. Persson, Urban Forsberg, Jens Birch, Lars Hultman and Erik Janzén
Epitaxial growth of AlN layers on SiC substrates in a hot-wall MOCVD system
Phys. Stat. Sol. (c), Vol. 0, Issue 1, 2002.
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Anelia Kakanakova-Georgieva, Urban Forsberg, Björn Magnusson, Rositsa Yakimova and Erik Janzén
Growth of AlN films by hot-wall CVD and sublimation techniques: Effect of growth cell pressure
Materials Science Forum, Vols. 389-393, 2002.
Web of Science® Times Cited: 1
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L Kassamakova, R Kakanakov, Rositsa Yakimova, Anelia Kakanakova-Georgieva, Mikael Syväjärvi, Lars Wilzén and Erik Janzén
Effect of temperature treatment on Au/Pd Schottky contacts to 4H-SiC
Materials Science Forum, Vols. 389-393, 2002.
Web of Science® Times Cited: 1
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Rositsa Yakimova, H Jacobson, Mikael Syväjärvi, Anelia Kakanakova-Georgieva, Tihomir Iakimov, Chariya Virojanadara, Leif Johansson and Erik Janzén
Impact of the initial surface conditions on defect appearance in 4H-SiC epilayers
Materials Science Forum, Vols. 389-393, 2002.
Web of Science® Times Cited: 5
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Anelia Kakanakova-Georgieva, Rositsa Yakimova, J Zhang, Liutauras Storasta, Mikael Syväjärvi and Erik Janzén
Characteristics of boron in 4H-SiC layers produced by high-temperature techniques
Materials Science Forum, Vols. 389-393, 2002.
Web of Science® Times Cited: 5
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Mikael Syväjärvi, Rositsa Yakimova, Anelia Kakanakova-Georgieva, S.G. Sridhara, M.K. Linnarsson and Erik Janzén
Study of nitrogen, aluminium and boron incorporation in SiC layers grown by sublimation epitaxy
J. Cryst. Growth, Vols. 237-239, 2002.
Web of Science® Times Cited: 6
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Rositsa Yakimova, Tihomir Iakimov, Anelia Kakanakova-Gueorguie, Mikael Syväjärvi, Henrik Jacobson, Chariya Virojanadara, Leif Johansson and Erik Janzén
Effect of High Temperature Annealing on Surface and Bulk Characteristics of 4H-SiC
<em>Proc. of the 43rd Electronic Material Conference</em>, 2001.
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Mikael Syväjärvi, Rositsa Yakimova, Anne Henry, Anelia Kakanakova-Georgieva, M Linnarsson and Erik Janzén
Optical properties of aluminium and nitrogen in compensated 4H-SiC epitaxial layers
Materials Research Society Symposium Proceedings, Vol. 640, 2001.
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Rositsa Yakimova, Mikael Syväjärvi, H Jacobsson, Anelia Kakanakova-Georgieva, S Rendakova, V Dmitriev and Erik Janzén
Defect evolution in SiC sublimation epitaxy layers grown on LPE buffers with reduced micropipe density
Materials Research Society Symposium Proceedings, Vol. 640, 2001.
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Rositsa Yakimova, Mikael Syväjärvi, Anelia Kakanakova-Georgieva and Erik Janzén
Stress related morphological defects in SiC epitaxial layers
Diam. Relat. Mater., Vol. 10, 2001.
Web of Science® Times Cited: 2
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Rositsa Yakimova, Mikael Syväjärvi, Tihomir Iakimov, Henrik Jacobsson, Anelia Kakanakova-Georgieva, P. Raback and Erik Janzén
Growth of silicon carbide: Process-related defects
Appl. Surf. Sci., Vol. 184, 2001.
Web of Science® Times Cited: 9
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Anelia Kakanakova-Georgieva, Rositsa Yakimova, Mikael Syväjärvi and Erik Janzén
Behavior of background impurities in thick 4H-SiC epitaxial layers
Appl. Surf. Sci., Vol. 184, 2001.
Web of Science® Times Cited: 4
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Ph.D., Lic. Theses
