Publications for Anders Lundskog
Co-author map based on ISI articles 2007-

Keywords

vapor temperature quantum qds qd pyramids pyramid optical mocvd ingan hot-wall hexagonal gan exciton energy emission controlled charged apex (0001)

Journal Articles

Anders Lundskog, Chih-Wei Hsu, K. Fredrik Karlsson, Supaluck Amloy, Daniel Nilsson, Urban Forsberg, Per-Olof Holtz and Erik Janzén
  Direct generation of linearly-polarized photon emission with designated orientations from site-controlled InGaN quantum dots
  Light: Science & Applications, 2014, 3, e139.
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 Web of Science® Times Cited: 3

Justinas Palisaitis, Anders Lundskog, Urban Forsberg, Erik Janzén, Jens Birch, Lars Hultman and Per Persson
  Characterization of InGaN/GaN quantum well growth using monochromated valence electron energy loss spectroscopy
  Journal of Applied Physics, 2014, 115(3), 034302.

Chih-Wei Hsu, Evgenii Moskalenko, Martin Eriksson, Anders Lundskog, Fredrik K. Karlsson, Urban Forsberg, Erik Janzén and Per-Olof Holtz
  The charged exciton in an InGaN quantum dot on a GaN pyramid
  Applied Physics Letters, 2013, 103(1), .
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 Web of Science® Times Cited: 2

Anders Lundskog, Chih-Wei Hsu, K Fredrik Karlsson, Urban Forsberg, Per-Olof Holtz and Erik Janzén
  Controlled growth of hexagonal GaN pyramids by hot-wall MOCVD
  Journal of Crystal Growth, 2013, 363, 287-293.
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Per Olof Holtz, Chi-Wei Hsu, Anders Lundskog, K. Fredrik Karlsson, Urban Forsberg and Erik Janzén
  Deterministic Single InGaN Quantum Dots grown on GaN Micro-Pyramid Arrays
  Advanced Materials Research, 2013, 646, 34-37.

Hsu-Cheng Hsu, Geng-Ming Hsu, Yu-shiung Lai, Zhe Chuan Feng, Shuo-Yen Tseng, Anders Lundskog, Urban Forsberg, Erik Janzén, Kuei-Hsien Chen and Li-Chyong Chen
  Polarized and diameter-dependent Raman scattering from individual aluminum nitride nanowires: The antenna and cavity effects
  Applied Physics Letters, 2012, 101(12), 121902.
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 Web of Science® Times Cited: 3

Anders Lundskog, Justinas Palisaitis, Chih-Wei Hsu, Martin Eriksson, Lars Hultman, Per Persson, Urban Forsberg, Per-Olof Holtz and Erik Janzén
  InGaN quantum dot formation mechanism on hexagonal GaN/InGaN/GaN pyramids
  Nanotechnology, 2012, 23(30), 305708.
 Web of Science® Times Cited: 5

Anders Lundskog, Urban Forsberg, Per-Olof Holtz and Erik Janzén
  Morphology control of hot-wall MOCVD selective area -grown hexagonal GaN pyramids
  Crystal Growth & Design, 2012, 12(11), 5491-5496.
 Web of Science® Times Cited: 3

Per-Olof Holtz, Chih-Wei Hsu, L A Larsson, K Fredrik Karlsson, Daniel Dufåker, Anders Lundskog, Urban Forsberg, Erik Janzén, Evgenii Moskalenko, V Dimastrodonato, L Mereni and E Pelucchi
  Optical characterization of individual quantum dots
  Physica. B, Condensed matter, 2012, 407(10), 1472-1475.

Chih-Wei Hsu, Anders Lundskog, Fredrik Karlsson, Urban Forsberg, Erik Janzén and Per-Olof Holtz
  Single Excitons in InGaN Quantum Dots on GaN Pyramid Arrays
  Nano letters (Print), 2011, 11(6), 2415-2418.
 Web of Science® Times Cited: 18

R J T J T Simms, M J Uren, T Martin, J Powell, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Erik Janzén and M Kuball
  Micro-Raman spectroscopy as a voltage probe in AlGaN/GaN heterostructure devices: Determination of buffer resistances
  SOLID-STATE ELECTRONICS, 2011, 55(1), 5-7.

M. Fagerlind, F. Allerstam, E.O. Sveinbjornsson, N. Rorsman, Anelia Kakanakova-Georgieva, Anders Lundskog, Urban Forsberg and Erik Janzén
  Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors
  Journal of Applied Physics, 2010, 108(1), 014508.
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 Web of Science® Times Cited: 22

Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Rafal Ciechonski and Erik Janzén
  Improved hot-wall MOCVD growth of highly uniform AlGaN/GaN/HEMT structures
  Journal of Crystal Growth, 2009, 311(10), 3007-3010.
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 Web of Science® Times Cited: 17

Gernot J Riedel, James W Pomeroy, Keith P Hilton, Jessica O Maclean, David J Wallis, Michael J Uren, Trevor Martin, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Galia Pozina, Erik Janzén, Richard Lossy, Reza Pazirandeh, Frank Brunner, Joachim Wuerfl and Martin Kuball
  Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers
  IEEE Electron Device Letters, 2009, 30(2), 103-106.
 Web of Science® Times Cited: 26

Anelia Kakanakova-Georgieva, Rafal Ciechonski, Urban Forsberg, Anders Lundskog and Erik Janzén
  Hot-Wall MOCVD for Highly Efficient and Uniform Growth of AIN
  Crystal Growth & Design, 2009, 9(2), 880-884.
 Web of Science® Times Cited: 20

Anne Henry, Anders Lundskog and Erik Janzén
  Large area mapping of the alloy composition of AlxGa1-xN using infrared reflectivity
  PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2009, 3(5), 145-147.
 Web of Science® Times Cited: 4

Galia Pozina, Carl Hemmingsson, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Bo Monemar, Lars Hultman and Erik Janzén
  Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substrate
  Journal of Applied Physics, 2008, 104(11), 113513.
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 Web of Science® Times Cited: 2

Henrik Pedersen, Stefano Leone, Anne Henry, Anders Lundskog and Erik Janzén
  Growth characteristics of chloride-based SiC epitaxial growth
  Physica status solidi (RRL) - Rapid Research Letters, 2008, 2(6), 278-280.
 Web of Science® Times Cited: 27

Rafal Ciechonski, Anders Lundskog, Urban Forsberg, Anelia Kakanakova-Georgieva, Henrik Pedersen and Erik Janzén
  High 2DEG mobility of HEMT structures grown on 100 mm SI 4H-SiC substrates by hot-wall MOCVD
  Journal of Applied Physics, 2007, , .

Conference Articles

Chih-Wei Hsu, Anders Lundskog, Fredrik Karlsson, Urban Forsberg, Erik Janzén and Per-Olof Holtz
  Optical characterization of InGaN quantum dots on GaN pyramids grown by MOCVD
  The 30th International Conference on the Physics of Semiconductors (ICPS30), July 2010, Seoul, Korea, 2010.


Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Beyer, Anders Lundskog and Erik Janzén
  Chloride-based SiC epitaxial growth
  Materials Science Forum Vols. 615-617, 2009.


 Web of Science® Times Cited: 1

Anne Henry, Anders Lundskog, Justinas Palisaitis, Ivan Ivanov, Anelia Kakanakova-Georgieva, Urban Forsberg, Per Persson and Erik Janzén
  AlGaN Multiple Quantum Wells and AlN Grown in a Hot-wall MOCVD for Deep UV Applications
  ECS Transactions, Vol. 25, Iss. 8, 2009.


Galia Pozina, Carl Hemmingsson, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Ivan Gueorguiev Ivanov, Bo Monemar, Lars Hultman and Erik Janzén
  Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4- SiC substrate
  8th International Conference on Physics of Light-Matter Coupling in Nanostructures,2008, 2008.


Anders Lundskog, Urban Forsberg, Anelia Kakanakova-Georgieva, Rafal Ciechonski, Ivan Gueorguiev Ivanov, Vanya Darakchieva, Erik Janzén, M. Fagerlind, J-Y. Shiu and N. Rorsman
  Highly Uniform Hot-Wall MOCVD Growth of High-Quality AlGaN/GaN HEMT-Structures on 100 mm Semi-Insulating 4H-SiC Substrates
  ICNS-7,2007, 2007.


Ph.D. Theses

Anders Lundskog
  Controlled growth of hexagonal GaN pyramids and InGaN QDs
  2012.


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