Publications for Anders Lundskog
Co-author map based on ISI articles 2007-
Journal Articles
Anders Lundskog, Chih-Wei Hsu, K Fredrik Karlsson, Urban Forsberg, Per-Olof Holtz and Erik Janzén
Controlled growth of hexagonal GaN pyramids by hot-wall MOCVD
Journal of Crystal Growth, 2013, 363, 287-293.
Fulltext  |
Hsu-Cheng Hsu, Geng-Ming Hsu, Yu-shiung Lai, Zhe Chuan Feng, Shuo-Yen Tseng, Anders Lundskog, Urban Forsberg, Erik Janzén, Kuei-Hsien Chen and Li-Chyong Chen
Polarized and diameter-dependent Raman scattering from individual aluminum nitride nanowires: The antenna and cavity effects
Applied Physics Letters, 2012, 101(12), 121902.
Fulltext |
Anders Lundskog, Justinas Palisaitis, Chih-Wei Hsu, Martin Eriksson, Lars Hultman, Per Persson, Urban Forsberg, Per-Olof Holtz and Erik Janzén
InGaN quantum dot formation mechanism on hexagonal GaN/InGaN/GaN pyramids
Nanotechnology, 2012, 23(30), 305708.
Web of Science® Times Cited: 2 |
Anders Lundskog, Urban Forsberg, Per-Olof Holtz and Erik Janzén
Morphology control of hot-wall MOCVD selective area -grown hexagonal GaN pyramids
Crystal Growth & Design, 2012, 12(11), 5491-5496.
|
Per-Olof Holtz, Chih-Wei Hsu, L A Larsson, K Fredrik Karlsson, Daniel Dufåker, Anders Lundskog, Urban Forsberg, Erik Janzén, Evgenii Moskalenko, V Dimastrodonato, L Mereni and E Pelucchi
Optical characterization of individual quantum dots
Physica. B, Condensed matter, 2012, 407(10), 1472-1475.
|
Chih-Wei Hsu, Anders Lundskog, Fredrik Karlsson, Urban Forsberg, Erik Janzén and Per-Olof Holtz
Single Excitons in InGaN Quantum Dots on GaN Pyramid Arrays
Nano letters (Print), 2011, 11(6), 2415-2418.
Web of Science® Times Cited: 11 |
R J T J T Simms, M J Uren, T Martin, J Powell, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Erik Janzén and M Kuball
Micro-Raman spectroscopy as a voltage probe in AlGaN/GaN heterostructure devices: Determination of buffer resistances
SOLID-STATE ELECTRONICS, 2011, 55(1), 5-7.
|
M. Fagerlind, F. Allerstam, E.O. Sveinbjornsson, N. Rorsman, Anelia Kakanakova-Georgieva, Anders Lundskog, Urban Forsberg and Erik Janzén
Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors
Journal of Applied Physics, 2010, 108(1), 014508.
Fulltext Web of Science® Times Cited: 7 |
Anne Henry, Anders Lundskog and Erik Janzén
Large area mapping of the alloy composition of AlxGa1-xN using infrared reflectivity
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2009, 3(5), 145-147.
Web of Science® Times Cited: 2 |
Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Rafal Ciechonski and Erik Janzén
Improved hot-wall MOCVD growth of highly uniform AlGaN/GaN/HEMT structures
Journal of Crystal Growth, 2009, 311(10), 3007-3010.
Fulltext Web of Science® Times Cited: 11 |
Anelia Kakanakova-Georgieva, Rafal Ciechonski, Urban Forsberg, Anders Lundskog and Erik Janzén
Hot-Wall MOCVD for Highly Efficient and Uniform Growth of AIN
Crystal Growth & Design, 2009, 9(2), 880-884.
Web of Science® Times Cited: 11 |
Gernot J Riedel, James W Pomeroy, Keith P Hilton, Jessica O Maclean, David J Wallis, Michael J Uren, Trevor Martin, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Galia Pozina, Erik Janzén, Richard Lossy, Reza Pazirandeh, Frank Brunner, Joachim Wuerfl and Martin Kuball
Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers
IEEE Electron Device Letters, 2009, 30(2), 103-106.
Web of Science® Times Cited: 15 |
Galia Pozina, Carl Hemmingsson, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Bo Monemar, Lars Hultman and Erik Janzén
Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substrate
Journal of Applied Physics, 2008, 104(11), 113513.
Fulltext Web of Science® Times Cited: 1 |
Henrik Pedersen, Stefano Leone, Anne Henry, Anders Lundskog and Erik Janzén
Growth characteristics of chloride-based SiC epitaxial growth
Physica status solidi (RRL) - Rapid Research Letters, 2008, 2(6), 278-280.
Web of Science® Times Cited: 23 |
Rafal Ciechonski, Anders Lundskog, Urban Forsberg, Anelia Kakanakova-Georgieva, Henrik Pedersen and Erik Janzén
High 2DEG mobility of HEMT structures grown on 100 mm SI 4H-SiC substrates by hot-wall MOCVD
Journal of Applied Physics, 2007, , .
|
Conference Articles
Chih-Wei Hsu, Anders Lundskog, Fredrik Karlsson, Urban Forsberg, Erik Janzén and Per-Olof Holtz
Optical characterization of InGaN quantum dots on GaN pyramids grown by MOCVD
The 30th International Conference on the Physics of Semiconductors (ICPS30), July 2010, Seoul, Korea, 2010.
|
Anne Henry, Anders Lundskog, Justinas Palisaitis, Ivan Ivanov, Anelia Kakanakova-Georgieva, Urban Forsberg, Per Persson and Erik Janzén
AlGaN Multiple Quantum Wells and AlN Grown in a Hot-wall MOCVD for Deep UV Applications
ECS Transactions, Vol. 25, Iss. 8, 2009.
|
Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Beyer, Anders Lundskog and Erik Janzén
Chloride-based SiC epitaxial growth
Materials Science Forum Vols. 615-617, 2009.
Web of Science® Times Cited: 1
|
Galia Pozina, Carl Hemmingsson, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Ivan Gueorguiev Ivanov, Bo Monemar, Lars Hultman and Erik Janzén
Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4- SiC substrate
8th International Conference on Physics of Light-Matter Coupling in Nanostructures,2008, 2008.
|
Anders Lundskog, Urban Forsberg, Anelia Kakanakova-Georgieva, Rafal Ciechonski, Ivan Gueorguiev Ivanov, Vanya Darakchieva, Erik Janzén, M. Fagerlind, J-Y. Shiu and N. Rorsman
Highly Uniform Hot-Wall MOCVD Growth of High-Quality AlGaN/GaN HEMT-Structures on 100 mm Semi-Insulating 4H-SiC Substrates
ICNS-7,2007, 2007.
|
Ph.D. Theses
Ph.D., Lic. Theses
