Publications for Andreas Gällström
Co-author map based on ISI articles 2007-

Keywords

vacancy tungsten temperature spin silicon sic si semi-insulating resonance photoluminescence optical nb metal hf epr defects defect 6h-sic 4h-sic 4h-

Journal Articles

Nguyen Son Tien, Xuan Thang Trinh, Andreas Gällström, Stefano Leone, Olle Kordina, Erik Janzén, Krisztian Szasz, Viktor Ivady and Adam Gali
  Electron paramagnetic resonance and theoretical studies of Nb in 4H- and 6H-SiC
  Journal of Applied Physics, 2012, 112(8), 083711.
   Fulltext  PDF  
 Web of Science® Times Cited: 1

Andreas Gällström, Björn Magnusson, Franziska Beyer, Adam Gali, Nguyen Son Tien, Stefano Leone, Ivan Gueorguiev Ivanov, Carl Hemmingsson, Anne Henry and Erik Janzén
  Optical identification and electronic configuration of tungsten in 4H-and 6H-SiC
  Physica. B, Condensed matter, 2012, 407(10), 1462-1466.
 Web of Science® Times Cited: 2

Viktor Ivady, Andreas Gällström, Nguyen Son Tien, Erik Janzén and Adam Gali
  Asymmetric Split-Vacancy Defects in SiC Polytypes: A Combined Theoretical and Electron Spin Resonance Study
  Physical Review Letters, 2011, 107(19), 195501.
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Franziska Beyer, Carl Hemmingsson, Stefano Leone, Y.-C. Lin, Henrik Gällström, Anne Henry and Erik Janzén
  Deep levels in iron doped n- and p-type 4H-SiC
  Journal of Applied Physics, 2011, 110, 123701-1-123701-5.
   Fulltext  PDF  
 Web of Science® Times Cited: 1

Franziska Beyer, Carl Hemmingsson, Andreas Gällström, Stefano Leone, Henrik Pedersen, Anne Henry and Erik Janzén
  Deep levels in tungsten doped n-type 3C-SiC
  Applied Physics Letters, 2011, 98(15), 152104.
   Fulltext  PDF  
 Web of Science® Times Cited: 9

Erik Janzén, Adam Gali, Patrick Carlsson, Andreas Gällström, Björn Magnusson and Nguyen Tien Son
  The silicon vacancy in SiC
  Physica. B, Condensed matter, 2009, 404(22), 4354-4358.
 Web of Science® Times Cited: 8

Erik Janzén, Adam Gali, Patrick Carlsson, Andreas Gällström, Björn Magnusson and Nguyen Tien Son
  The Silicon vacancy in SiC
  Materials Science Forum, 2009, 615-617, 347-352.
 Web of Science® Times Cited: 4

C.L. Hsiao, T.W. Liu, C.T. Wu, H.C. Hsu, G.M. Hsu, L.C. Chen, W.Y. Shiao, C.C. Yang, Andreas Gällström, Per-Olof Holtz, C.C. Chen and K.H. Chen
  High-phase-purity zinc-blende InN on r -plane sapphire substrate with controlled nitridation pretreatment
  Applied Physics Letters, 2008, 92(11), .
 Web of Science® Times Cited: 19

Henrik Pedersen, Stefano Leone, Anne Henry, Vanya Darakchieva, Patrick Carlsson, Andreas Gällström and Erik Janzén
  Very high crystalline quality of thick 4H-SiC epilayers grown from methyltrichlorosilane (MTS)
  Physica status solidi (RRL) - Rapid Research Letters, 2008, 2(4), 188-190.
 Web of Science® Times Cited: 17

Son Tien Nguyen, Patrick Carlsson, Andreas Gällström, Björn Magnusson and Erik Janzén
  Deep levels and carrier compensation in V-doped semi-insulating 4H-SiC
  Applied Physics Letters, 2007, 91(20), .
 Web of Science® Times Cited: 3

Conference Articles

Ivan Gueorguiev Ivanov, Andreas Gällström, Stefano Leone, Olle Kordina, Nguyen Tien Son, Anne Henry, Viktor Ivády, Adam Gali and Erik Janzén
  Optical properties of the niobium centre in 4H, 6H, and 15R SiC
  SILICON CARBIDE AND RELATED MATERIALS 2012, 2013.


Xuan Thang Trinh, Andreas Gällström, Son Tian Nguyen, Stefano Leone, Olle Kordina and Erik Janzén
  Electron Paramagnetic Resonance Studies of Nb in 6H-SiC
  Materials Science Forum (Volumes 740 - 742), 2013.


V. Ivady, B. Somogyi, V. Zolyomi, Andreas Gällström, Nguyen Tien Son, Erik Janzén and Adam Gali
  Transition Metal Defects in Cubic and Hexagonal Polytypes of SiC: Site Selection, Magnetic and Optical Properties from ab initio Calculations
  Materials Science Forum Vol 717 - 720, 2012.


Andreas Gällström, Björn Magnusson, Franziska Beyer, Adam Gali, Nguyen Tien Son, Stefano Leone, Ivan G. Ivanov, Anne Henry, Carl Hemmingsson and Erik Janzén
  Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC
  Materials Science Forum Vols 717 - 720, 2012.


Nguyen Tien Son, V. Ivady, Adam Gali, Andreas Gällström, Stefano Leone, Olle Kordina and Erik Janzén
  Identification of Niobium in 4H-SiC by EPR and ab Initio Studies
  Materials Science Forum Vols 717 - 720, 2012.


 Web of Science® Times Cited: 2

Andreas Gällström, Ivan Gueorguiev Ivanov, R. Coble, R. P. Devaty, W. J. Choyke and Erik Janzén
  Investigation of intrinsic carbon-related defects in 4H-SiC by selective-excitation photoluminescence spectroscopy
  Materials Science Forum Vols 717 - 720, 2012.


 Web of Science® Times Cited: 1

Adam Gali, Andreas Gällström, Nguyen Tien Son and Erik Janzén
  Theory of neutral divacancy in SiC: a defect for spintronics
  Materials Science Forum, Vols. 645-648, 2010.


 Web of Science® Times Cited: 6  Fulltext PDF

Andreas Gällström, Björn Magnusson, A. Thuaire, Anne Henry, Plamen Paskov and Erik Janzén
  The Electronic Structure of the UD-4 defect in 4H, 6H and 15R SiC
  Materials Science Forum, Vols. 600-603, 2009.


 Web of Science® Times Cited: 2

S. Hahn, Franziska Beyer, Andreas Gällström, Patrick Carlsson, Anne Henry, Björn Magnusson, J. Niklas and Erik Janzén
  Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material
  Materials Science Forum Vols. 600-603, 2009.


 Web of Science® Times Cited: 2

Son Tien Nguyen, Patrick Carlsson, Andreas Gällström, Björn Magnusson and Erik Janzén
  Deep Levels Responsible for Semi-insulating Behaviour in Vanadium-doped 4H-SiC Substrates
  Materials Science Forum, Vols. 600-603, 2009.


 Web of Science® Times Cited: 1

Andreas Gällström, Björn Magnusson and Erik Janzén
  Optical identification of Mo related deep level defect in 4H and 6H SiC
  Materials Science Forum Vols. 615-617, 2009.


 Web of Science® Times Cited: 3

Son Tien Nguyen, Patrick Carlsson, Andreas Gällström, Björn Magnusson and Erik Janzén
  Prominent defects in semi-insulating SiC substrates
  Physica B, Vol. 401-402, 2007.


 Web of Science® Times Cited: 9

Andreas Gällström, Björn Magnusson, Patrick Carlsson, Son Tien Nguyen, Anne Henry, Franziska Beyer, Mikael Syväjärvi, Rositsa Yakimova and Erik Janzén
  Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC
  Materials Science Forum, vol. 556-557, 2007.


 Web of Science® Times Cited: 5