Publications for Anders Elfving
Co-author map based on ISI articles 2007-

Keywords

µm µm type-ii temperatures temperature strain spatially si/ge si/ge si recombination quantum photoluminescence optical islands intermixing indirect ge energy alignment

Journal Articles

P.F. Gomes, F. Iikawa, F. Cerdeira, Mats Larsson, Anders Elfving, Göran Hansson, Wei-Xin Ni and Per-Olof Holtz
  Type-I optical emissions in GeSi quantum dots
  Applied Physics Letters, 2007, 91(5), .
 Web of Science® Times Cited: 3

Mats Larsson, Anders Elfving, Wei-Xin Ni, Göran V. Hansson and Per-Olof Holtz
  Growth-temperature-dependent band alignment in Si/Ge quantum dots from photoluminescence spectroscopy
  Physical Review B, 2006, 73(19), 195319-1--195319-7.
   Fulltext  PDF  
 Web of Science® Times Cited: 19

Anders Elfving, Ming Zhao, Göran V. Hansson and Wei-Xin Ni
  Asymmetric relaxation of SiGe/Si(110) investigated by high-resolution x-ray diffraction reciprocal space mapping
  Applied physics letters, 2006, 89, 181901-1--181901-3.
 Web of Science® Times Cited: 9

Anders Elfving, Amir Karim, Göran V. Hansson and Wei-Xin Ni
  Three-terminal Ge dot/SiGe quantum-well photodetectors for near-infrared light detection
  Applied Physics Letters, 2006, 89, 083510-083513.
 Web of Science® Times Cited: 6

Mats Larsson, Per-Olof Holtz, Anders Elfving, Göran Hansson and Wei-Xin Ni
  Reversed quantum-confined Stark effect and an asymmetric band alignment observed for type-II Si∕Ge quantum dots
  Physical Review B, 2005, 71(11), 113301.
   Fulltext  PDF  
 Web of Science® Times Cited: 4

Mats Larsson, Anders Elfving, Per-Olof Holtz, Göran Hansson and Wei-Xin Ni
  Photoluminescence study of Si/Ge quantum dots
  Surface Science, 2003, 532-535, 832-836.
 Web of Science® Times Cited: 14

Mats Larsson, Anders Elfving, Per-Olof Holtz, Göran Hansson and Wei-Xin Ni
  Luminescence study of Si/Ge quantum dots
  Physica. E, Low-Dimensional systems and nanostructures, 2003, 16(3-4), 476-480.
 Web of Science® Times Cited: 7

Mats Larsson, Anders Elfving, Per-Olof Holtz, Göran Hansson and Wei-Xin Ni
  Spatially direct and indirect transitions observed for Si/Ge quantum dots
  Applied Physics Letters, 2003, 82(26), 4785-4787.
 Web of Science® Times Cited: 28

Anders Elfving, Göran V. Hansson and Wei-Xin Ni
  SiGe (Ge-dot) heterojunction phototransistors for efficient light detection at 1.3-1.55 µm
  Physica E: Low-dimensional Systems and Nanostructures, 2003, 16(3-4), 528-532.
 Web of Science® Times Cited: 18

Göran Hansson, Wei-Xin Ni, Chun-Xia Du, Anders Elfving and F. Duteil
  Origin of abnormal temperature dependence of electroluminescence from Er/O-doped Si diodes
  Applied Physics Letters, 2001, 78(15), 2104-2106.
 Web of Science® Times Cited: 21

Conference Articles

P F Gomes, F Cerdeira, Mats Larsson, Anders Elfving, Göran Hansson, Wei-Xin Ni, Per-Olof Holtz, J R Madureira and A García-Cristóbal
  Large optical emission blue shift in Ge/Si quantum dots under external biaxial strain
  ICPS 29th International Conference on the Physics of Semiconductors,2008, 2008.


P.F. Gomes, P.F. Gomes, F. Iikawa, F. Iikawa, F. Cerdeira, F. Cerdeira, Mats Larsson, Mats Larsson, Anders Elfving, Anders Elfving, Göran Hansson, Göran Hansson, Wei-Xin Ni, Wei-Xin Ni, Per-Olof Holtz and Per-Olof Holtz
  Size dependent spatial direct and indirect transitions in Ge/Si QDs
  The 6th International Conference on Low Dimensional Structures and Devices,2007, 2007.


Amir Karim, Anders Elfving, Mats Larsson, Wei-Xin Ni and G. V. Hansson
  Compositional analysis of Si/SiGe quantum dots using STEM and EDX
  Volume 6129 - Quantum Dots, Particles, and Nanoclusters III, Proceedings of SPIE, 2006.


Mats Larsson, Anders Elfving, Per-Olof Holtz, Wei-Xin Ni and Göran Hansson
  Band alignment studies of self-organized Ge/Si quantum dots based on luminescence characterization
  The 23rd International Conference on Defects in Semiconductors,2005, 2005.


Mats Larsson, Anders Elfving, Per-Olof Holtz, Wei-Xin Ni and Göran Hansson
  Band alignment studies of self-organized Ge/Si quantum dots based on luminescence characterization
  The 9th Conference on Optics and Excitons in Confined Systems,2005, 2005.


Mats Larsson, Anders Elfving, Per-Olof Holtz, Göran Hansson and Wei-Xin Ni
  Asymmetric band alignment at Si/Ge quantum dots studied by luminescence from p-i-n and n-i-p structures
  ICPS2004,2004, 2005.


Amir Karim, Wei-Xin Ni, Anders Elfving, Per O.Å Persson and Göran Hansson
  Characterization of Er/O-doped Si-LEDs with low thermal quenching
  Material Research Society Symposium Proceedings, 2005.


Bouchaib Adnane, Anders Elfving, Ming Zhao, Mats Larsson, Bengt Magnuson and Wei-Xin Ni
  Mid/far-infrared detection using a MESFET with B-modulation doped Ge-dot/SiGe-well multiple stacks in the channel region
  First IEEE International Conference on Group IV Photonics, 2004.


Mats Larsson, Anders Elfving, M.I. Hussain, Per-Olof Holtz and Wei-Xin Ni
  Luminescence Properties of Ge Quantum Dots Produced by MBE at Different Temperatures
  Proc. of IEEE/LEOS 1st International Conference on Group IV Photonics,2004, 2004.


Wei-Xin Ni, Anders Elfving, Mats Larsson, Göran Hansson and Per-Olof Holtz
  Si-based Photonic Transistor Devices for Integrated Optoelectronics
  The 3rd International Conference on SiGe Epitaxy and Heterostructures,2003, 2003.


Anders Elfving, Göran. V. Hansson and Wei-Xin Ni
  Infrared photodetectors based on a Ge-dot/SiGe-well field effect transistor structure
  Electrochemical Society Proceedings, SiGe: Materials, Processing, and Devices, 2003.


Anders Elfving, Mats Larsson, Per-Olof Holtz, Göran V. Hansson and Wei-Xin Ni
  Efficient near infrared Si/Ge quantum dot photodetector based on a heterojunction bipolar transistor
  Material Research Society Symposium Proceedings, 2003.


Y.-H. Wu, C.-Y. Wang, Anders Elfving, Göran Hansson and Wei-Xin Ni
  Surface diffusion limited nucleation of Ge dots on the Si(001) surface
  , 2002.


 Web of Science® Times Cited: 1

Wei-Xin Ni, Chun-Xia Du, F. Duteil, Anders Elfving and Göran Hansson
  1.54 µm light emitting devices based on Er/O-doped Si layered structures grown by molecular beam epitaxy
  Optical materials (Amsterdam), 2001.


 Web of Science® Times Cited: 2

Ph.D. Theses

Anders Elfving
  Near-infrared photodetectors based on Si/SiGe nanostructures
  2006.


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