Publications for Anders Elfving
Co-author map based on ISI articles 2007-
Journal Articles
P.F. Gomes, F. Iikawa, F. Cerdeira, Mats Larsson, Anders Elfving, Göran Hansson, Wei-Xin Ni and Per-Olof Holtz
Type-I optical emissions in GeSi quantum dots
Applied Physics Letters, 2007, 91(5), .
Web of Science® Times Cited: 3 |
Mats Larsson, Anders Elfving, Wei-Xin Ni, Göran V. Hansson and Per-Olof Holtz
Growth-temperature-dependent band alignment in Si/Ge quantum dots from photoluminescence spectroscopy
Physical Review B, 2006, 73(19), 195319-1--195319-7.
Fulltext  Web of Science® Times Cited: 16 |
Anders Elfving, Ming Zhao, Göran V. Hansson and Wei-Xin Ni
Asymmetric relaxation of SiGe/Si(110) investigated by high-resolution x-ray diffraction reciprocal space mapping
Applied physics letters, 2006, 89, 181901-1--181901-3.
Web of Science® Times Cited: 8 |
Anders Elfving, Amir Karim, Göran V. Hansson and Wei-Xin Ni
Three-terminal Ge dot/SiGe quantum-well photodetectors for near-infrared light detection
Applied Physics Letters, 2006, 89, 083510-083513.
Web of Science® Times Cited: 5 |
Mats Larsson, Per-Olof Holtz, Anders Elfving, Göran Hansson and Wei-Xin Ni
Reversed quantum-confined Stark effect and an asymmetric band alignment observed for type-II Si∕Ge quantum dots
Physical Review B, 2005, 71(11), 113301.
Fulltext Web of Science® Times Cited: 3 |
Mats Larsson, Anders Elfving, Per-Olof Holtz, Göran Hansson and Wei-Xin Ni
Photoluminescence study of Si/Ge quantum dots
Surface Science, 2003, 532-535, 832-836.
Web of Science® Times Cited: 14 |
Mats Larsson, Anders Elfving, Per-Olof Holtz, Göran Hansson and Wei-Xin Ni
Luminescence study of Si/Ge quantum dots
Physica. E, Low-Dimensional systems and nanostructures, 2003, 16(3-4), 476-480.
Web of Science® Times Cited: 6 |
Mats Larsson, Anders Elfving, Per-Olof Holtz, Göran Hansson and Wei-Xin Ni
Spatially direct and indirect transitions observed for Si/Ge quantum dots
Applied Physics Letters, 2003, 82(26), 4785-4787.
Web of Science® Times Cited: 25 |
Anders Elfving, Göran V. Hansson and Wei-Xin Ni
SiGe (Ge-dot) heterojunction phototransistors for efficient light detection at 1.3-1.55 µm
Physica E: Low-dimensional Systems and Nanostructures, 2003, 16(3-4), 528-532.
Web of Science® Times Cited: 18 |
Göran Hansson, Wei-Xin Ni, Chun-Xia Du, Anders Elfving and F. Duteil
Origin of abnormal temperature dependence of electroluminescence from Er/O-doped Si diodes
Applied Physics Letters, 2001, 78(15), 2104-2106.
Web of Science® Times Cited: 21 |
Conference Articles
P F Gomes, F Cerdeira, Mats Larsson, Anders Elfving, Göran Hansson, Wei-Xin Ni, Per-Olof Holtz, J R Madureira and A García-Cristóbal
Large optical emission blue shift in Ge/Si quantum dots under external biaxial strain
ICPS 29th International Conference on the Physics of Semiconductors,2008, 2008.
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P.F. Gomes, P.F. Gomes, F. Iikawa, F. Iikawa, F. Cerdeira, F. Cerdeira, Mats Larsson, Mats Larsson, Anders Elfving, Anders Elfving, Göran Hansson, Göran Hansson, Wei-Xin Ni, Wei-Xin Ni, Per-Olof Holtz and Per-Olof Holtz
Size dependent spatial direct and indirect transitions in Ge/Si QDs
The 6th International Conference on Low Dimensional Structures and Devices,2007, 2007.
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Amir Karim, Anders Elfving, Mats Larsson, Wei-Xin Ni and G. V. Hansson
Compositional analysis of Si/SiGe quantum dots using STEM and EDX
Volume 6129 - Quantum Dots, Particles, and Nanoclusters III, Proceedings of SPIE, 2006.
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Mats Larsson, Anders Elfving, Per-Olof Holtz, Wei-Xin Ni and Göran Hansson
Band alignment studies of self-organized Ge/Si quantum dots based on luminescence characterization
The 23rd International Conference on Defects in Semiconductors,2005, 2005.
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Mats Larsson, Anders Elfving, Per-Olof Holtz, Wei-Xin Ni and Göran Hansson
Band alignment studies of self-organized Ge/Si quantum dots based on luminescence characterization
The 9th Conference on Optics and Excitons in Confined Systems,2005, 2005.
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Mats Larsson, Anders Elfving, Per-Olof Holtz, Göran Hansson and Wei-Xin Ni
Asymmetric band alignment at Si/Ge quantum dots studied by luminescence from p-i-n and n-i-p structures
ICPS2004,2004, 2005.
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Amir Karim, Wei-Xin Ni, Anders Elfving, Per O.Å Persson and Göran Hansson
Characterization of Er/O-doped Si-LEDs with low thermal quenching
Material Research Society Symposium Proceedings, 2005.
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Bouchaib Adnane, Anders Elfving, Ming Zhao, Mats Larsson, Bengt Magnuson and Wei-Xin Ni
Mid/far-infrared detection using a MESFET with B-modulation doped Ge-dot/SiGe-well multiple stacks in the channel region
First IEEE International Conference on Group IV Photonics, 2004.
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Mats Larsson, Anders Elfving, M.I. Hussain, Per-Olof Holtz and Wei-Xin Ni
Luminescence Properties of Ge Quantum Dots Produced by MBE at Different Temperatures
Proc. of IEEE/LEOS 1st International Conference on Group IV Photonics,2004, 2004.
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Wei-Xin Ni, Anders Elfving, Mats Larsson, Göran Hansson and Per-Olof Holtz
Si-based Photonic Transistor Devices for Integrated Optoelectronics
The 3rd International Conference on SiGe Epitaxy and Heterostructures,2003, 2003.
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Anders Elfving, Göran. V. Hansson and Wei-Xin Ni
Infrared photodetectors based on a Ge-dot/SiGe-well field effect transistor structure
Electrochemical Society Proceedings, SiGe: Materials, Processing, and Devices, 2003.
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Anders Elfving, Mats Larsson, Per-Olof Holtz, Göran V. Hansson and Wei-Xin Ni
Efficient near infrared Si/Ge quantum dot photodetector based on a heterojunction bipolar transistor
Material Research Society Symposium Proceedings, 2003.
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Y.-H. Wu, C.-Y. Wang, Anders Elfving, Göran Hansson and Wei-Xin Ni
Surface diffusion limited nucleation of Ge dots on the Si(001) surface
, 2002.
Web of Science® Times Cited: 1
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Wei-Xin Ni, Chun-Xia Du, F. Duteil, Anders Elfving and Göran Hansson
1.54 µm light emitting devices based on Er/O-doped Si layered structures grown by molecular beam epitaxy
Optical materials (Amsterdam), 2001.
Web of Science® Times Cited: 2
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Ph.D. Theses
Ph.D., Lic. Theses
