Publications for Amir Karim
Co-author map based on ISI articles 2007-
Journal Articles
Amir Karim, Göran V. Hansson and M. K. Linnarsson
Influence of Er and O concentrations on the microstructure and luminescence of Si:Er/O LEDs
Journal of Physics, Conference Series, 2008, 100(042010), .
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Amir Karim, Chun-Xia Du and Göran Hansson
Influence of exposure to 980 nm laser radiation on the luminescence of Si: Er/O light-emitting diodes
JOURNAL OF APPLIED PHYSICS, 2008, 104(12), 123110.
Fulltext  Web of Science® Times Cited: 1 |
Ming Zhao, Amir Karim, Göran Hansson, Wei-Xin Ni, P Townsend, S A Lynch and D J Paul
Molecular beam epitaxy growth of Si/SiGe bound-to-continuum quantum cascade structures for THz emission
Thin Solid Films, 2008, 517(1), 34-37.
Web of Science® Times Cited: 1 |
Ming Zhao, Amir Karim, Wei-Xin Ni, C. R. Pidgeon, P. J. Phillips, D. Carder, B. N. Murdin, T. Fromherz and D. J. Paul
Strain-symmetrized Si/SiGe multi-quantum well structures grown by molecular beam epitaxy for intersubband engineering
Journal of luminescence, 2006, 121(2), 403-408.
Web of Science® Times Cited: 2 |
Anders Elfving, Amir Karim, Göran V. Hansson and Wei-Xin Ni
Three-terminal Ge dot/SiGe quantum-well photodetectors for near-infrared light detection
Applied Physics Letters, 2006, 89, 083510-083513.
Web of Science® Times Cited: 5 |
Amir Karim, G. V. Hansson, Wei-Xin Ni, Per-Olof Holtz, Mats Larsson and H.A. Atwater
Photoluminescence Studies of Sn Quantum Dots in Si Grown by MBE
Optical materials (Amsterdam), 2005, 27(5), 836-840.
Web of Science® Times Cited: 5 |
Conference Articles
Amir Karim, Anders Elfving, Mats Larsson, Wei-Xin Ni and G. V. Hansson
Compositional analysis of Si/SiGe quantum dots using STEM and EDX
Volume 6129 - Quantum Dots, Particles, and Nanoclusters III, Proceedings of SPIE, 2006.
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Amir Karim, Wei-Xin Ni, Anders Elfving, Per O.Å Persson and Göran Hansson
Characterization of Er/O-doped Si-LEDs with low thermal quenching
Material Research Society Symposium Proceedings, 2005.
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Ph.D. Theses
Ph.D., Lic. Theses
