Publications for Adam Gali
Co-author map based on ISI articles 2007-

Keywords

vacancy supercell stable site silicon sic model metal initio hyperfine hydrogen epr defects defect complexes centers center carbon ab 4h-sic

Journal Articles

Erik Janzén, Adam Gali, Patrick Carlsson, Andreas Gällström, Björn Magnusson and Nguyen Tien Son
  The Silicon vacancy in SiC
  Materials Science Forum, 2009, 615-617, 347-352.
 Web of Science® Times Cited: 3

Son Tien Nguyen, Erik Janzén, J. Isoya, N. Morishita, H. Hanaya, H. Takizawa, T. Ohshima and Adam Gali
  Identification of a Frenkel-pair defect in electron-irradiated 3C SiC
  Physical Review B. Condensed Matter and Materials Physics, 2009, 80, 125201.
 Web of Science® Times Cited: 7

Adam Gali, P Deak, E Rauls, Tien Son Nguyen, Ivan Gueorguiev Ivanov, Fredrik Carlsson, Erik Janzén and WJ Choyke
  Correlation between the antisite pair and the D-I center in SiC
  Physical Review B. Condensed Matter and Materials Physics, 2003, 67(15), .
 Web of Science® Times Cited: 49

Adam Gali, P Deak, P Ordejon, Tien Son Nguyen, Erik Janzén and WJ Choyke
  Aggregation of carbon interstitials in silicon carbide: A theoretical study
  Physical Review B. Condensed Matter and Materials Physics, 2003, 68(12), .
 Web of Science® Times Cited: 69

Adam Gali, P. Deak, Tien Son Nguyen and Erik Janzén
  Hydrogen passivation of nitrogen in SiC
  Applied Physics Letters, 2003, 83(7), 1385-1387.
 Web of Science® Times Cited: 15

Adam Gali, B Aradi, P Deak, WJ Choyke and Tien Son Nguyen
  Overcoordinated hydrogens in the carbon vacancy: Donor centers of SiC
  Physical Review Letters, 2000, 84(21), 4926-4929.
 Web of Science® Times Cited: 26

Chapters in Books

Erik Janzén, Adam Gali, Anne Henry, Ivan Gueorguiev Ivanov, Björn Magnusson and Son Tien Nguyen
  Defects in SiC
  Defects in Microelectronic Materials and Devices, Taylor and Francis LLC, 2008, 770.


Conference Articles

Ivan Gueorguiev Ivanov, Andreas Gällström, Stefano Leone, Olle Kordina, Nguyen Tien Son, Anne Henry, Viktor Ivády, Adam Gali and Erik Janzén
  Optical properties of the niobium centre in 4H, 6H, and 15R SiC
  SILICON CARBIDE AND RELATED MATERIALS 2012, 2013.


V. Ivady, B. Somogyi, V. Zolyomi, Andreas Gällström, Nguyen Tien Son, Erik Janzén and Adam Gali
  Transition Metal Defects in Cubic and Hexagonal Polytypes of SiC: Site Selection, Magnetic and Optical Properties from ab initio Calculations
  Materials Science Forum Vol 717 - 720, 2012.


Andreas Gällström, Björn Magnusson, Franziska Beyer, Adam Gali, Nguyen Tien Son, Stefano Leone, Ivan G. Ivanov, Anne Henry, Carl Hemmingsson and Erik Janzén
  Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC
  Materials Science Forum Vols 717 - 720, 2012.


Nguyen Tien Son, V. Ivady, Adam Gali, Andreas Gällström, Stefano Leone, Olle Kordina and Erik Janzén
  Identification of Niobium in 4H-SiC by EPR and ab Initio Studies
  Materials Science Forum Vols 717 - 720, 2012.


 Web of Science® Times Cited: 2

Adam Gali, Andreas Gällström, Nguyen Tien Son and Erik Janzén
  Theory of neutral divacancy in SiC: a defect for spintronics
  Materials Science Forum, Vols. 645-648, 2010.


 Web of Science® Times Cited: 4  Fulltext PDF

Adam Gali, T. Umeda, Erik Janzén, N. Morishita, T. Ohshima and J. Isoya
  Identification of the Di-Carbon Antisite Defect in n-type 4H-SiC
  Materials Science Forum Vols. 615-617, 2009.


Son Tien Nguyen, J. Isoya, N. Morishita, T. Ohshima, H. Itoh, Adam Gali and Erik Janzén
  Defects introduced by electron-irradiation at low temperatures in SiC
  Materials Science Forum Vols. 615-617, 2009.


J Isoya, M Katagiri, T Umeda, S Koizumi, H Kanda, Tien Son Nguyen, Anne Henry, Adam Gali and Erik Janzén
  Pulsed EPR studies of phosphorus shallow donors in diamond and SiC
  Physica B, Vols. 376-377, 2006.


 Web of Science® Times Cited: 8

Tien Son Nguyen, T Umeda, J Isoya, Adam Gali, M Bockstedte, Björn Magnusson, A Ellison, N Morishita, T Ohshima, H Itoh and Erik Janzén
  Identification of divacancies in 4H-SiC
  Physica B: Condensed Matter, Vols. 376-377, 2006.


 Web of Science® Times Cited: 2

Adam Gali, P. Deák, E. Rauls, Son Tien Nguyen, Ivan Gueorguiev Ivanov, Fredrik Carlsson, Erik Janzén and W.J. Choyke
  Antisites as possible origin of irradiation induced photoluminescence centers in SiC: A theoretical study on clusters of antisites and carbon interstitials in 4H-SiC
  Mater. Sci. Forum, Vol. 457-460, 2004.


 Web of Science® Times Cited: 1

P Deak, Adam Gali, Z Hajnal, T Frauenheim, Tien Son Nguyen, Erik Janzén, WJ Choyke and P Ordejon
  A cause for SiC/SiO2 interface states: The site selection of oxygen in SiC
  Materials Science Forum, Vols. 433-436, 2003.


Adam Gali, P Deak, Tien Son Nguyen, Erik Janzén, HJ von Bardeleben and JL Monge
  Calculation of hyperfine constants of defects in 4H-SiC
  Materials Science Forum, Vols. 433-436, 2003.


Adam Gali, P. Deak, E. Rauls, Tien Son Nguyen, Ivan Gueorguiev Ivanov, Fredrik Carlsson, Erik Janzén and W.J. Choyke
  Anti-site pair in SiC: A model of the DI center
  Physica B, 2003.


 Web of Science® Times Cited: 7

B Aradi, Adam Gali, P Deak, Tien Son Nguyen and Erik Janzén
  Impurity-controlled dopant activation - The role of hydrogen in p-type doping of SiC
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 3

Adam Gali, P Deak, Tien Son Nguyen and Erik Janzén
  Theoretical investigation of an intrinsic defect in SiC
  Materials Science Forum, Vols. 389-393, 2002.


 Web of Science® Times Cited: 7

B Aradi, Adam Gali, P Deak, E Rauls, T Frauenheim and Tien Son Nguyen
  Boron centers in 4H-SiC
  Materials science Forum, Vols. 353-356, 2001.


 Web of Science® Times Cited: 19

B. Aradi, Adam Gali, P. Deak, Tien Son Nguyen and Erik Janzén
  Passivation of p-type dopants in 4H-SiC by hydrogen
  Physica B, Vols. 308-310, 2001.


 Web of Science® Times Cited: 10

P Deak, Adam Gali, B Aradi, Tien Son Nguyen, Erik Janzén and WJ Choyke
  Vacancies and their complexes with H in SiC
  Materials Science Forum, Vols. 338-343, 2000.


 Web of Science® Times Cited: 5